STMicroelectronics STPS30H100CW, STPS30H100CT Technical data
®
STPS30H100CW/CT
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTICS
I
F(AV)
V
RRM
2x15A
100 V
Tj (max) 175 °C
V
(max) 0.67V
F
FEATURES AND BENEFITS
NEGLIGIBLE SWITCHING LOSSES
■
LOW LEAKAGE CURRENT
■
GOOD TRADE OFF BETWEEN LEAKAGE
■
CURRENT AND FORWARD VOLTAGE DROP
LOW THERMAL RESISTANCE
■
AVALANCHE CAPABILITY SPECIFIED
■
DESCRIPTION
Dual center tap Schottky rectifier suited for
Switch Mode Power Supplies and high frequency DC to DC converters.
Packaged in TO-247, this device is intended
for use in high frequency inverters.
A1
A2
A1
K
K
TO-247
STPS30H100CW
A2
A1
TO-220AB
STPS30H100CT
A2
K
ABSOLUTE RATINGS (limiting values, per diode)
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
I
RRM
I
RSM
P
ARM
T
stg
Repetitive peak reverse voltage 100 V
RMS forward current 30 A
Average forward current Tc = 155°C
δ = 0.5
Per diode
Per device
15
30
Surge non repetitive forward current tp = 10 ms sinusoidal 250 A
Repetitive peak reverse current tp=2µssquare F = 1kHz 1 A
Non repetitive peak reverse current tp = 100 µs square 3 A
Repetitive peak avalanche power tp = 1µs Tj = 25°C 10800 W
Storage temperature range - 65 to + 175 °C
Tj Maximum operating junction temperature * 175 °C
dV/dt Critical rate of rise of reverse voltage 10000 V/µs
dPtot
*:
<
dTj Rth j a
July 2003 - Ed: 5E
thermal runaway condition for a diode on its own heatsink
−1()
A
1/5
STPS30H100CW/CT
THERMAL RESISTANCES
Symbol Parameter Value Unit
R
th (j-c)
R
th (c)
When the diodes 1 and 2 are used simultaneously :
∆ Tj(diode 1) = P(diode1) x R
STATIC ELECTRICAL CHARACTERISTICS
Symbol Parameter TestsConditions Min. Typ. Max. Unit
Junction to case Per diode
Total
Coupling 0.1
(Per diode) + P(diode 2) x R
th(j-c)
th(c)
1.6
0.9
°C/W
* Reverse leakage current Tj = 25°C VR=V
I
R
RRM
Tj = 125°C 2 6 mA
** Forward voltage drop Tj = 25°CI
V
F
= 15 A 0.80 V
F
Tj = 125°C IF= 15 A 0.64 0.67
Tj=25°CI
Tj = 125°C I
Pulse test : * tp=5ms,δ<2%
** tp = 380 µs, δ <2%
= 30 A 0.93
F
= 30 A 0.74 0.80
F
To evaluate the maximum conduction losses use the following equation :
P=0.54xI
Fig. 1: Average forward power dissipation versus
average forward current (per diode).
PF(av)(W)
14
12
10
8
6
4
2
0
02468101214161820
F(AV)
δ = 0.05
+ 0.0086 x I
δ = 0.2
δ = 0.1
IF(av) (A)
F2(RMS)
δ = 0.5
δ
δ = 1
=tp/T
Fig. 2: Average forward current versus ambient
temperature (δ=0.5, per diode).
IF(av)(A)
18
16
14
12
10
T
tp
Rth(j-a)=15°C/W
8
6
4
2
0
0 25 50 75 100 125 150 175
δ
=tp/T
T
tp
5µA
Rth(j-a)=Rth(j-c)
Tamb(°C)
2/5
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