STMicroelectronics STPS3045CT, STPS3045CG, STPS3045CR, STPS3045CP, STPS3045CPI Technical data

® STPS3045CT/CG/CR/CP/CPI/CW/CFP

POWER SCHOTTKY RECTIFIER

MAIN PRODUCT CHARACTERISTICS

IF(AV)	2 x 15 A
VRRM	45 V
Tj (max)	175 °C
VF	0.57 V

FEATURES AND BENEFITS

■VERY SMALL CONDUCTION LOSSES

■NEGLIGIBLE SWITCHING LOSSES

■EXTREMELY FAST SWITCHING

■LOW THERMAL RESISTANCE

■INSULATED PACKAGE: TOP-3I Insulating voltage = 2500V RMS Capacitance = 12pF

■AVALANCHE CAPABILITY SPECIFIED

DESCRIPTION

Dual center tap Schottky rectifier suited for SwitchMode Power Supply and high frequency DC to DC converters.

Packaged either in TO-220AB, TO-220FPAB, D2PAK, I2PAK, TO-247, SOT93 or TOP-3I, this device is especially intended for use in low voltage, high frequency inverters, free wheeling and polarity protection applications.

July 2003 - Ed: 6E

	A1
		K
	A2
		K
		A2
	A2	A1
	K
	A1	D2PAK
	TO-220AB	STPS3045CG
	STPS3045CT
	A2	A2
	K
		K
	A1
		A1
	Insulated	I2PAK
	TOP-3I	STPS3045CR
	STPS3045CPI
	A2	A2
	K	K
	A1	A1
	SOT-93	TO-247
	STPS3045CP	STPS3045CW
		A2
		K
		A1
	TO-220FPAB
	STPS3045CFP
		1/9

STPS3045CT/CG/CR/CP/CPI/CW/CFP

ABSOLUTE RATINGS (limiting values, per diode)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

45

V

IF(RMS)

RMS forward current

30

A

IF(AV)

Average forward

TO-220AB / D2PAK /

Tc = 155°C

Per diode

15

A

current

I2PAK / SOT-93 / TO-247

Per de-

30

δ = 0.5

vice

TO-220FPAB

Tc = 130°C

TOP-3I

Tc = 150°C

IFSM

Surge non repetitive forward current

tp = 10 ms sinusoidal

220

A

IRRM

Repetitive peak reverse current

tp = 2 µs

square

1

A

F = 1kHz

IRSM

Non repetitive peak reverse current

tp = 100 µs square

3

A

PARM

Repetitive peak avalanche power

tp = 1µs

Tj = 25°C

6000

W

Tstg

Storage temperature range

-65 to +175

°C

Tj

Maximum operating junction temperature *

175

°C

dV/dt

Critical rate of rise of reverse voltage

10000

V/µs

* :

dPtot

<

1

thermal runaway condition for a diode on its own heatsink

dTj

Rth( j − a)

THERMAL RESISTANCES

Symbol

Parameter

Value

Unit

Rth(j-c)

Junction to case

TO-220AB / D2PAK / I2PAK

Per diode

1.60

°C/W

Total

0.85

SOT-93 / TO-247

Per diode

1.5

Total

0.8

TO-220FPAB

Per diode

4

Total

3.2

TOP-3I

Per diode

2.2

Total

1.6

Rth(c)

TO-220AB / D2PAK / I2PAK

Coupling

0.10

SOT-93 / TO-247

TO-220FPAB

Coupling

2.5

TOP-3I

Coupling

1.0

When the diodes 1 and 2 are used simultaneously:

Tj (diode 1) = P (diode1) x Rth(j-c) (per diode) + P (diode 2) x Rth(c)

STATIC ELECTRICAL CHARACTERISTICS (Per diode)

Symbol

Parameter

Tests Conditions

Min.

Typ.

Max.

Unit

IR *

Reverse leakage current

Tj = 25°C

V R = VRRM

200

µA

Tj = 125°C

11

40

mA

VF *

Forward voltage drop

Tj = 125°C

IF = 15 A

0.5

0.57

V

Tj = 25°C

IF = 30 A

0.84

Tj = 125°C

I F = 30 A

0.65

0.72

Pulse test : * tp = 380 µs, δ < 2%

To evaluate the conduction losses use the following equation :

P = 0.42 x IF(AV) + 0.01 IF2(RMS)

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STPS3045CT/CG/CR/CP/CPI/CW/CFP

Fig. 1: Average forward power dissipation versus average forward current (per diode).

PF(AV)(W)

12				δ = 0.1	δ = 0.2		δ = 0.5
11		δ = 0.05
10
9									δ = 1
8
7
6
5
4
3									T
2
1					IF(AV)(A)			δ=tp/T		tp
0
0	2	4	6	8	10	12	14	16	18	20

Fig. 2: Average current versus ambient temperature (δ = 0.5, per diode).

IF(AV)(A)

18
			Rth(j-a)=Rth(j-c) (TO-220AB, I2PAK, D2PAK, SOT-93, TO-247)
16
14				Rth(j-a)=Rth(j-c) (TO-220FPAB)
12				Rth(j-a)=Rth(j-c) (TOP-3I)
10
8			Rth(j-a)=15°C/W
6	T
4
2	δ=tp/T	tp	Tamb(°C)
0
0	25	50	75	100	125	150	175

Fig. 3: Normalized avalanche power derating	Fig. 4: Normalized avalanche power derating
versus pulse duration.	versus junction temperature.

PARM(tp)
PARM(1µs)
1
0.1
0.01
0.001			tp(µs)
0.01	0.1	1	10	100	1000

	PARM(tp)
PARM(25°C)
1.2
1
0.8
0.6
0.4
0.2
0			Tj(°C)
0	25	50	75	100	125	150

Fig. 5-1: Non repetitive surge peak forward current versus overload duration (maximum values, per diode).

IM(A)
200
180		TO-220AB, I2PAK, D2PAK, SOT-93, TO-247
160
140
120
100
			TC=75°C
80			TC=100°C
60			TC=125°C
IM
40
20	t
	δ=0.5	t(s)
0
1.E-03	1.E-02	1.E-01	1.E+00

Fig. 5-2: Non repetitive surge peak forward current versus overload duration (maximum values, per diode).

	IM(A)
160
140				TOP-3I
120
100
80
				TC=75°C
60				TC=100°C
40				TC=125°C
	IM
20		t
		δ=0.5	t(s)
0
1.E-03		1.E-02	1.E-01	1.E+00

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