Axial Power Schottky rectifier suited for Switch
Mode Power Supply and high frequency
DC/DC converters. Packaged in DO-41, this
device is intended for use in low voltage, high
frequencyinvertersandsmallbattery
chargers.
ABSOLUTE RATINGS (limiting values, per diode)
DO-41
SymbolParameterValueUnit
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
I
RRM
P
ARM
T
T
Repetitive peak reverse voltage100V
RMS forward current10A
Average forward currentTL= 120°Cδ = 0.52A
Surge non repetitive forward currenttp = 10 ms sinusoidal50A
Repetitive peak reverse currenttp=2µssquareF = 1kHz1A
Repetitive peak avalanche powertp = 1µsTj = 25°C1500W
Storage temperature range- 65 to + 175°C
stg
Maximum operating junction temperature *175°C
j
dV/dtCritical rate of rise of reverse voltage10000V/µs
dPtot
*:
<
dTjRth ja
July 2003 - Ed: 2A
thermal runaway condition for a diode on its own heatsink
−1()
1/4
Page 2
STPS2H100
THERMAL RESISTANCES
SymbolParameterValueUnit
R
th(j-a)
R
th(j-l)
STATIC ELECTRICAL CHARACTERISTICS (per diode)
SymbolParameterTests conditionsMin.Typ.Max.Unit
I
R
V
F
Pulse test :* tp=5ms,δ<2%
To evaluate the maximum conduction losses use the following equation :
P=0.62xI
Junction to ambientLead length = 10 mm100°C/W
Junction to leadLead lenght = 10 mm35
*Reverse leakage currentTj= 25°CVR=V
T
= 125°C0.20.5mA
j
**Forward voltage dropTj=25°CI
T
= 125°CI
j
T
= 25°CIF= 4 A0.92
j
T
= 125°CI
j
** tp = 380 µs, δ <2%
+0.04xI
F(AV)
F2(RMS)
RRM
= 2 A0.86V
F
= 2 A0.650.70
F
= 4 A0.720.78
F
1µA
Fig.1: Conduction losses versusaveragecurrent.
P(W)
F(AV)
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0.00.20.40.60.81.01.21.41.61.82.02.2
δ = 0.05
I(A)
F(AV)
δ = 0.1
δ = 0.2
δ = 0.5
=tp/T
δ
δ = 1
T
tp
Fig. 3: Normalized avalanche power derating
versus pulse duration.
P(t)
ARM p
P(1µs)
ARM
1
0.1
0.01
t (µs)
0.001
0.10.011
p
101001000
Fig. 2: Average forward current versus ambient
temperature (δ=0.5).
I(A)
F(AV)
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0255075100125150175
δ
T
=tp/T
tp
R=R
th(j-a) th(j-I)
R =100°C/W
th(j-a)
T(°C)
amb
Fig. 4: Normalized avalanche power derating
versus junction temperature.
P(t)
ARM p
P(25°C)
ARM
1.2
1
0.8
0.6
0.4
0.2
0
0255075100125150
T (°C)
j
2/4
Page 3
STPS2H100
Fig. 5: Non repetitive surge peak forward current
versus overload duration (maximum values).
I (A)
M
10
9
8
7
6
5
4
3
IM
2
1
0
1.E-031.E-021.E-011.E+00
δ=0.5
t
t(s)
T =25°C
a
T =75°C
a
T =125°C
a
Fig. 7: Reverse leakage current versus reverse
voltage applied (typical values).
I (µA)
R
1.E+03
1.E+02
1.E+01
1.E+00
T=150°C
j
T=125°C
j
T=100°C
j
T=75°C
j
T=50°C
j
Fig. 6: Relative variation of thermal impedance
junction to ambient versus pulse duration.
Z/R
th(j-a) th(j-a)
1.0
0.9
0.8
0.7
0.6
δ = 0.5
0.5
0.4
0.3
δ = 0.2
0.2
δ = 0.1
0.1
Single pulse
0.0
1.E-021.E-011.E+001.E+011.E+021.E+03
t (s)
p
δ
=tp/T
T
tp
Fig. 8:Junction capacitance versus reverse
voltage applied (typical values).
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