®
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTICS
STPS2H100
I
F(AV)
V
RRM
T
(max) 175°C
j
V
(max) 0.70 V
F
2A
100 V
FEATURES AND BENEFITS
NEGLIGIBLE SWITCHING LOSSES
■
HIGH JUNCTION TEMPERATURE CAPABILITY
■
GOOD TRADE OFF BETWEEN LEAKAGE CUR-
■
RENT AND FORWARD VOLTAGE DROP
LOW LEAKAGE CURRENT
■
AVALANCHE CAPABILITY SPECIFIED
■
DESCRIPTION
Axial Power Schottky rectifier suited for Switch
Mode Power Supply and high frequency
DC/DC converters. Packaged in DO-41, this
device is intended for use in low voltage, high
frequency inverters and small battery
chargers.
ABSOLUTE RATINGS (limiting values, per diode)
DO-41
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
I
RRM
P
ARM
T
T
Repetitive peak reverse voltage 100 V
RMS forward current 10 A
Average forward current TL= 120°C δ = 0.5 2 A
Surge non repetitive forward current tp = 10 ms sinusoidal 50 A
Repetitive peak reverse current tp=2µssquare F = 1kHz 1 A
Repetitive peak avalanche power tp = 1µs Tj = 25°C 1500 W
Storage temperature range - 65 to + 175 °C
stg
Maximum operating junction temperature * 175 °C
j
dV/dt Critical rate of rise of reverse voltage 10000 V/µs
dPtot
*:
<
dTj Rth j a
July 2003 - Ed: 2A
thermal runaway condition for a diode on its own heatsink
−1()
1/4
STPS2H100
THERMAL RESISTANCES
Symbol Parameter Value Unit
R
th(j-a)
R
th(j-l)
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol Parameter Tests conditions Min. Typ. Max. Unit
I
R
V
F
Pulse test : * tp=5ms,δ<2%
To evaluate the maximum conduction losses use the following equation :
P=0.62xI
Junction to ambient Lead length = 10 mm 100 °C/W
Junction to lead Lead lenght = 10 mm 35
* Reverse leakage current Tj= 25°C VR=V
T
= 125°C 0.2 0.5 mA
j
** Forward voltage drop Tj=25°CI
T
= 125°CI
j
T
= 25°C IF= 4 A 0.92
j
T
= 125°CI
j
** tp = 380 µs, δ <2%
+0.04xI
F(AV)
F2(RMS)
RRM
= 2 A 0.86 V
F
= 2 A 0.65 0.70
F
= 4 A 0.72 0.78
F
1µA
Fig.1: Conduction losses versusaveragecurrent.
P (W)
F(AV)
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
δ = 0.05
I (A)
F(AV)
δ = 0.1
δ = 0.2
δ = 0.5
=tp/T
δ
δ = 1
T
tp
Fig. 3: Normalized avalanche power derating
versus pulse duration.
P(t)
ARM p
P (1µs)
ARM
1
0.1
0.01
t (µs)
0.001
0.10.01 1
p
10 100 1000
Fig. 2: Average forward current versus ambient
temperature (δ=0.5).
I (A)
F(AV)
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0 25 50 75 100 125 150 175
δ
T
=tp/T
tp
R=R
th(j-a) th(j-I)
R =100°C/W
th(j-a)
T (°C)
amb
Fig. 4: Normalized avalanche power derating
versus junction temperature.
P(t)
ARM p
P (25°C)
ARM
1.2
1
0.8
0.6
0.4
0.2
0
0 25 50 75 100 125 150
T (°C)
j
2/4
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