ST MICROELECTRONICS STPS 2H100 Datasheet

Page 1
®
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTICS
STPS2H100
I
F(AV)
RRM
T
(max) 175°C
j
V
(max) 0.70 V
F
2A
100 V
FEATURES AND BENEFITS
NEGLIGIBLE SWITCHING LOSSES
HIGH JUNCTION TEMPERATURE CAPABILITY
GOOD TRADE OFF BETWEEN LEAKAGE CUR-
RENT AND FORWARD VOLTAGE DROP LOW LEAKAGE CURRENT
AVALANCHE CAPABILITY SPECIFIED
DESCRIPTION
Axial Power Schottky rectifier suited for Switch Mode Power Supply and high frequency DC/DC converters. Packaged in DO-41, this device is intended for use in low voltage, high frequency inverters and small battery chargers.
ABSOLUTE RATINGS (limiting values, per diode)
DO-41
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
I
RRM
P
ARM
T
T
Repetitive peak reverse voltage 100 V RMS forward current 10 A Average forward current TL= 120°C δ = 0.5 2 A Surge non repetitive forward current tp = 10 ms sinusoidal 50 A Repetitive peak reverse current tp=2µssquare F = 1kHz 1 A Repetitive peak avalanche power tp = 1µs Tj = 25°C 1500 W Storage temperature range - 65 to + 175 °C
stg
Maximum operating junction temperature * 175 °C
j
dV/dt Critical rate of rise of reverse voltage 10000 V/µs
dPtot
*:
<
dTj Rth j a
July 2003 - Ed: 2A
thermal runaway condition for a diode on its own heatsink
−1()
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STPS2H100
THERMAL RESISTANCES
Symbol Parameter Value Unit
R
th(j-a)
R
th(j-l)
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol Parameter Tests conditions Min. Typ. Max. Unit
I
R
V
F
Pulse test : * tp=5ms,δ<2%
To evaluate the maximum conduction losses use the following equation : P=0.62xI
Junction to ambient Lead length = 10 mm 100 °C/W Junction to lead Lead lenght = 10 mm 35
* Reverse leakage current Tj= 25°C VR=V
T
= 125°C 0.2 0.5 mA
j
** Forward voltage drop Tj=25°CI
T
= 125°CI
j
T
= 25°C IF= 4 A 0.92
j
T
= 125°CI
j
** tp = 380 µs, δ <2%
+0.04xI
F(AV)
F2(RMS)
RRM
= 2 A 0.86 V
F
= 2 A 0.65 0.70
F
= 4 A 0.72 0.78
F
A
Fig.1: Conduction losses versusaveragecurrent.
P (W)
F(AV)
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
δ = 0.05
I (A)
F(AV)
δ = 0.1
δ = 0.2
δ = 0.5
=tp/T
δ
δ = 1
T
tp
Fig. 3: Normalized avalanche power derating versus pulse duration.
P(t)
ARM p
P (1µs)
ARM
1
0.1
0.01
t (µs)
0.001
0.10.01 1
p
10 100 1000
Fig. 2: Average forward current versus ambient temperature (δ=0.5).
I (A)
F(AV)
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0 0 25 50 75 100 125 150 175
δ
T
=tp/T
tp
R=R
th(j-a) th(j-I)
R =100°C/W
th(j-a)
T (°C)
amb
Fig. 4: Normalized avalanche power derating
versus junction temperature.
P(t)
ARM p
P (25°C)
ARM
1.2
1
0.8
0.6
0.4
0.2
0
0 25 50 75 100 125 150
T (°C)
j
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STPS2H100
Fig. 5: Non repetitive surge peak forward current
versus overload duration (maximum values).
I (A)
M
10
9 8 7 6 5 4 3
IM
2 1 0
1.E-03 1.E-02 1.E-01 1.E+00
δ=0.5
t
t(s)
T =25°C
a
T =75°C
a
T =125°C
a
Fig. 7: Reverse leakage current versus reverse voltage applied (typical values).
I (µA)
R
1.E+03
1.E+02
1.E+01
1.E+00
T=150°C
j
T=125°C
j
T=100°C
j
T=75°C
j
T=50°C
j
Fig. 6: Relative variation of thermal impedance junction to ambient versus pulse duration.
Z/R
th(j-a) th(j-a)
1.0
0.9
0.8
0.7
0.6
δ = 0.5
0.5
0.4
0.3
δ = 0.2
0.2
δ = 0.1
0.1
Single pulse
0.0
1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03
t (s)
p
δ
=tp/T
T
tp
Fig. 8: Junction capacitance versus reverse voltage applied (typical values).
C(pF)
100
F=1MHz
V =30mV
OSC
T=25°C
j
1.E-01
1.E-02 020406080100
T=25°C
j
V (V)
R
Fig. 9-1: Forward voltage drop versus forward
current (low level).
I (A)
FM
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
T=125°C
j
(maximum values)
T=125°C
j
(typical values)
(maximum values)
V (V)
FM
T=25°C
j
V (V)
10
1 10 100
R
Fig. 9-2: Forward voltage drop versus forward
current (high level).
I (A)
FM
100
T=125°C
j
(maximum values)
T=125°C
j
10
(typical values)
V (V)
1
0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8
FM
T=25°C
j
(maximum values)
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STPS2H100
Fig. 10: Thermal resistance versus lead length.
R (°C/W)
th
120
R
100
80
th(j-a)
60
40
20
0
5 10152025
R
th(j-I)
L (mm)
leads
PACKAGE MECHANICAL DATA
DO-41 (plastic)
CA
O
/
D
C
O
/
D
BO
/
REF. DIMENSIONS
Millimeters Inches
Min. Max. Min. Max.
A 4.07 5.20 0.160 0.205
B 2.04 2.71 0.080 0.107 C 28 1.102 D 0.712 0.863 0.028 0.034
Ordering type Marking Package Weight Base qty Delivery mode
STPS2H100 STPS2H100
2000 Ammopack
cathode ring
DO-41 0.34 g
STPS2H100RL STPS2H100
5000 Tape & Reel
cathode ring
EPOXY MEETS UL94,V0
Informationfurnished isbelieved tobe accurateand reliable.However, STMicroelectronics assumesno responsibilityfor theconsequences of useof suchinformation norfor anyinfringement ofpatents orother rightsof thirdparties which mayresult fromits use.No licenseis grantedby implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change withoutnotice. This publication supersedesand replaces all informationpreviously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval ofSTMicroelectronics.
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