STMicroelectronics STPS24045TV Technical data

®
MAIN PRODUCT CHARACTERISTICS
STPS24045TV
POWER SCHOTTKY RECTIFIER
I
F(AV)
RRM
(max) 0.67 V
F
2 x 120 A
45 V
FEATURES AND BENEFITS
VERY SMALL CONDUCTION LOSSES
n
NEGLIGIBLE SWITCHING LOSSES
n
EXTREMELY FAST SWITCHING
n
LOW THERMAL RESISTANCE
n
INSULATED PACKAGE:
n
Insulating voltage = 2500 V
(RMS)
Capacitance = 45pF AVALANCHE CAPABILITY SPECIFIED
n
DESCRIPTION
Dual power Schottky rectifier suited for Switched Mode Power Supplies and high frequency DC to DC converters.
Packaged in ISOTOP, this device is especially in­tended for use in low voltage, high frequency in­verters, free wheeling and polarity protection applications.
ABSOLUTE RATINGS (limiting values, per diode)
K2 A2
A1K1
ISOTOP
ISOTOP isatrademark of STMicroelectronics
TM
Symbol Parameter Value Unit
RRM
I
F(RMS)
I
F(AV)
I
FSM
Repetitive peak reverse voltage 45 V RMS forward current 170 A Average forward current Tc = 80°C
δ = 0.5
Surge non repetitive forward current tp = 10 ms
Per diode Per device
120 240
1500 A
Sinusoidal
I
RRM
Repetitive peak reverse current tp=2µs
2A
F = 1kHz square
I
RSM
ARM
T
stg
Non repetitive peak reverse current tp = 100 µs square 10 A Repetitive peak avalanche power tp = 1µs Tj = 25°C 43000 W Storage temperature range - 55 to + 150 °C
Tj Maximum operating junction temperature 150 °C
dV/dt Critical rate of rise of reverse voltage 10000 V/µs
dPtot
*:
<
dTj Rth j a
July 2003 - Ed : 4A
thermal runaway condition for a diode on its own heatsink
−1()
1/4
STPS24045TV
THERMAL RESISTANCES
Symbol Parameter Value Unit
R
th (j-c)
R
th (c)
When the diodes 1 and 2 are used simultaneously : Tj(diode 1) = P(diode) x R
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol Parameter Tests Conditions Min. Typ. Max. Unit
I
R
Pulse test : * tp=5ms,δ<2%
To evaluate the conduction losses use the following equation : P=0.47xI
Fig. 1: Average forward power dissipation versus average forward current (per diode).
Junction to case Per diode 0.65 °C/W
Total 0.28 Coupling 0.10
(Per diode) + P(diode 2) x R
th(j-c)
* Reverse leakage current Tj = 25°CV
th(c)
R=VRRM
Tj = 125°C 300
* Forward voltage drop Tj = 25°CI
F
Tj = 125°CI Tj = 125°CI
** tp = 380 µs, δ <2%
+ 0.00167 x I
F(AV)
F2(RMS)
= 240 A 0.91 V
F
= 240 A 0.72 0.87
F
= 120 A 0.52 0.67
F
Fig. 2: Average forward current versus ambient temperature (δ= 0.5, per diode).
2mA
PF(av)(W)
110 100
90 80 70
δ = 0.2
δ = 0.1
δ = 0.05
δ = 0.5
δ = 1
60 50 40 30
T
20 10
0
0 20 40 60 80 100 120 140
IF(av) (A)
δ
=tp/T
tp
Fig. 3: Normalized avalanche power derating versus pulse duration.
P(t)
ARM p
P (1µs)
ARM
1
0.1
0.01
t (µs)
0.001
0.10.01 1
p
10 100 1000
IF(av)(A)
140 120 100
80 60
Rth(j-a)=Rth(j-c)
Rth(j-a)=2°C/W
Rth(j-a)=5°C/W
δ
=tp/T
T
tp
40 20
0
0 25 50 75 100 125 150
Tamb(°C)
Fig. 4: Normalized avalanche power derating
versus junction temperature.
P(t)
ARM p
P (25°C)
ARM
1.2 1
0.8
0.6
0.4
0.2 0
0 25 50 75 100 125 150
T (°C)
j
2/4
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