STMicroelectronics STPS2045C Technical data
®
Table 1: Main Product Characteristics
I
F(AV)
V
RRM
T
(max) 175°C
j
(typ) 0.57 V
V
F
2 x 10 A
45 V
FEATURES AND BENEFITS
■ Very small conduction losses
■ Negligible switching losses
■ Extremely fast switching
■ Insulated package: TO-220FPAB
Insulating voltage = 2000V DC
Capacitance = 12 pF
■ Avalanche rated
DESCRIPTION
Dual center tap Schottky rectifier suited for
SwitchMode Power Supply and high frequency
DC to DC converters.
Packaged either in TO-220AB, TO-220FPAB,
2
I
PAK, or D2PAK, this device is especially
intended for use in low voltage, high frequency
inverters, free wheeling and polarity protection
applications.
STPS2045C
POWER SCHOTTKY RECTIFIER
A1
K
A2
A1
TO-220AB
STPS2045CT
K
A1
TO-220FPAB
STPS2045CFP
A2
K
2
I
PAK
STPS2045CR
K
A2
2
D
PA K
STPS2045CG
A2
K
A1
A2
A1
November 2004
Table 2: Order Codes
Part Number Marking
STPS2045CT STPS2045CT
STPS2045CFP STPS2045CFP
STPS2045CG STPS2045CG
STPS2045CG-TR STPS2045CG
STPS2045CR STPS2045CR
REV. 5
1/8
STPS2045C
Table 3: Absolute Ratings (limiting values, per diode)
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
I
RRM
I
RSM
P
ARM
T
T
dV/dt Critical rate of rise of reverse voltage 10000 V/µs
dPtot
------------- --
* : thermal runaway condition for a diode on its own heatsink
dTj
Repetitive peak reverse voltage 45 V
RMS forward voltage 30 A
Average forward current
δ = 0.5
TO-220AB /
2
D
PAK / I2PAK
TO-220FPAB
= 155°C
T
c
T
= 125°C
c
Per diode 10
Per device 20
Surge non repetitive forward current tp = 10ms sinusoidal 180 A
Repetitive peak reverse current
tp = 2µs F = 1kHz
square
Non repetitive peak reverse current tp = 100ms square 2 A
Repetitive peak avalanche power tp = 1µs Tj = 25°C 4000 W
Storage temperature range -65 to + 175 °C
stg
Maximum operating junction temperature * 175 °C
j
1
-------------- ------------
<
Rth j a
–()
1A
A
Table 4: Thermal Resistance Parameters
Symbol Parameter Value Unit
R
R
th(j-c)
th(c)
Junction to case
Coupling
TO-220AB / D
2
PAK / I2PAK
TO-220FPAB Per diode
2
TO-220AB / D
PAK / I2PAK
Per diode
Total
Total
2.2
1.3
4.5
3.5
°C/W
Coupling 0.3 °C/W
TO-220FPAB 2.5
When the diodes 1 and 2 are used simultaneously:
T
(diode 1) = P(diode 1) x R
j
(per diode) + P(diode 2) x R
th(j-c)
th(c)
Table 5: Static Electrical Characteristics (per diode)
Symbol Parameter Tests conditions Min. Typ Max. Unit
= 25°C
T
I
*
R
V
Pulse test: * tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation: P = 0.42 x I
Reverse leakage current
*
Forward voltage drop
F
j
= 125°C
T
j
T
= 125°C IF = 10A
j
= 25°C
T
j
T
= 125°C
j
V
R
I
F
= V
= 20A
F(AV)
RRM
+ 0.015 I
0.5 0.57
0.65 0.72
F2(RMS)
100 µA
715 mA
0.84
V
2/8
STPS2045C
Figure 1: Average forward power dissipation
versus average forward current (per diode)
P (W)
F(AV)
8
7
6
5
4
3
2
1
0
0 1 2 3 4 5 6 7 8 9 10 11 12
δ = 0.05
δ = 0.1
δ = 0.2
I (A)
F(AV)
δ = 0.5
δ
=tp/T
δ = 1
T
tp
Figure 3: Normalized avalanche power
derating versus pulse duration
P(t)
ARM p
P (1µs)
ARM
1
0.1
0.01
t (µs)
0.001
0.10.01 1
p
10 100 1000
Figure 2: Average forward current versus
ambient temperature (δ = 0.5, per diode)
I (A)
F(AV)
12
10
8
6
4
2
0
0 25 50 75 100 125 150 175
δ
=tp/T
T
tp
R =15°C/W
th(j-a)
T (°C)
amb
R=R
th(j-a) th(j-c)
TO-220FPAB
TO-220AB
D²PAK
Figure 4: Normalized avalanche power
derating versus junction temperature
P(t)
ARM p
P (25°C)
ARM
1.2
1
0.8
0.6
0.4
0.2
0
25 50 75 100 125 150
T (°C)
j
Figure 5: Non repetitive surge peak forward
current versus overload duration (maximum
values, per diode) (TO-220AB, D
I (A)
M
140
120
100
80
60
40
IM
20
0
1E-3 1E-2 1E-1 1E+0
δ=0.5
t
t(s)
2
PAK, I2PAK)
T =75°C
C
T =100°C
C
T =125°C
C
Figure 6: Non repetitive surge peak forward
current versus overload duration (maximum
values, per diode) (TO-220FPAB)
I (A)
M
100
80
60
40
IM
20
0
1E-3 1E-2 1E-1 1E+0
δ=0.5
t
t(s)
T =75°C
C
T =100°C
C
T =125°C
C
3/8
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