STMicroelectronics STPS15H100C Technical data

®	STPS15H100C

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

MAIN PRODUCTS CHARACTERISTICS

IF(AV)	2 x 7.5 A
VRRM	100 V
Tj (max)	175 °C
VF (max)	0.67 V

FEATURES AND BENEFITS

■NEGLIGIBLE SWITCHING LOSSES

■LOW LEAKAGE CURRENT

■GOOD TRADE OFF BETWEEN LEAKAGE CURRENT AND FORWARD VOLTAGE DROP

■LOW THERMAL RESISTANCE

■AVALANCHE CAPABILITY SPECIFIED

DESCRIPTION

Dual center tab Schottky rectifier suited for Switch Mode Power Supply and high frequency DC to DC converters.

Package in DPAK, this device is intended for use in high frequency inverters.

ABSOLUTE RATINGS (limiting values, per diode)

A1

K

A2

K

A2

A1

STPS15H100CB

DPAK

Symbol						Parameter			Value	Unit
VRRM			Repetitive peak reverse voltage						100	V
IF(RMS)			RMS forward current						10	A
IF(AV)			Average forward current				Tc = 135°C	Per diode	7.5	A
							δ = 0.5	Per device	15
IFSM			Surge non repetitive forward current				tp = 10 ms sinusoidal		75	A
IRRM			Peak repetitive reverse current				tp = 2 µs square F=1kHz		1	A
PARM			Repetitive peak avalanche power				tp = 1µs Tj = 25°C		6600	W
Tstg			Storage temperature range						- 65 to + 175	°C
	Tj		Maximum operating junction temperature *						175	°C
dV/dt			Critical rate of rise reverse voltage						10000	V/µs
* :	dPtot		<		1	thermal runaway condition for a diode on its own heatsink
	dTj			Rth( j − a)

March 2004 - Ed : 3	1/4

STPS15H100C

THERMAL RESISTANCES

Symbol	Parameter		Value	Unit
Rth(j-c)	Junction to case	Per diode	4	°C/W
		Total	2.4
Rth(c)	Coupling		0.7
When the diodes 1 and 2 are used simultaneously :
∆ Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
STATIC ELECTRICAL CHARACTERISTICS (per diode)

Symbol	Parameter	Tests Conditions		Min.	Typ.	Max.	Unit
IR *	Reverse leakage current	Tj = 25°C	VR = VRRM			3	µA
		Tj = 125°C			1.3	4	mA
VF *	Forward voltage drop	Tj = 25°C	IF = 7.5 A			0.8	V
		Tj = 125°C	IF = 7.5 A		0.62	0.67
		Tj = 25°C	IF = 12 A			0.85
		Tj = 125°C	IF = 12 A		0.68	0.73
		Tj = 25°C	IF = 15 A			0.89
		Tj = 125°C	IF = 15 A		0.71	0.76

Pulse test : * tp = 380 µs, δ < 2%

To evaluate the conduction losses use the following equation :

P = 0.58 x IF(AV) + 0.012 IF2(RMS)

Fig. 1: Conduction losses versus average current.

Fig. 2: Average forward current versus ambient temperature (δ = 0.5).

PF(av)(W)
7									9
6							δ = 0.5		8
				δ = 0.2					7
5									6
			δ = 0.1					δ = 1
4
		δ = 0.05							5
3									4
2									3
								T
									2
1									1
				IF(av)(A)			δ=tp/T
									tp
0
									0
0	1	2	3	4	5	6	7	8	9

IF(av)(A)
			Rth(j-a)=Rth(j-c)
		Rth(j-a)=70°C/W
	T
δ=tp/T		tp	Tamb(°C)
0	25	50	75	100	125	150	175

Fig. 3: Normalized avalanche power derating	Fig. 4: Normalized avalanche power derating
versus pulse duration.	versus junction temperature.

PARM(tp)
PARM(1µs)
1
0.1
0.01
0.001			tp(µs)
0.01	0.1	1	10	100	1000
2/4

	PARM(tp)
PARM(25°C)
1.2
1
0.8
0.6
0.4
0.2
0			Tj(°C)
0	25	50	75	100	125	150