STMicroelectronics STPS1045B Technical data
®
Table 1: Main Product Characteristics
V
V
F
I
F(AV)
RRM
T
j
(max)
10 A
45 V
175°C
0.57 V
STPS1045B
POWER SCHOTTKY RECTIFIER
K
K
A
A
FEATURES AND BENEFITS
■ Negligible switching losses
■ Low forward drop
■ Low capacitance
■ High reverse avalanche surge capability
■ Avalanche specification
Table 2: Order Codes
Part Number Marking
STPS1045B S1045
STPS1045B-TR S1045
DPAK
DESCRIPTION
High voltage Schottky rectifier suited for Switch
Mode Power Supplies and other Power
Converters.
Packaged in DPAK, this device is intended for use
in high frequency circuitries where low switching
losses are required.
Table 3: Absolute Maximum Ratings
Symbol Parameter Value Unit
V
I
F(RMS)
I
F(AV)
I
I
P
RRM
/ pin RMS forward voltage 7 A
FSM
RRM
ARM
T
stg
T
j
Repetitive peak reverse voltage 45 V
Average forward current Tc = 150°C δ = 0.5 10 A
Surge non repetitive forward current tp = 10ms sinusoidal 75 A
Repetitive peak reverse current tp = 2µs F = 1KHz 1 A
Repetitive peak avalanche power tp = 1µs Tj = 25°C 4000 W
Storage temperature range -65 to + 175 °C
Maximum operating junction temperature 175 °C
dV/dt Critical rate of rise of reverse voltage 10000 V/µs
April 2005
REV. 4
1/5
STPS1045B
Table 4: Thermal Parameters
Symbol Parameter Value Unit
R
th(j-c)
Table 5: Static Electrical Characteristics
Symbol Parameter Tests conditions Min. Typ Max. Unit
I
R
V
F
Pulse test: * tp = 5 ms, δ < 2%
To evaluate the conduction losses use the following equation: P = 0.42 x I
Junction to case 3 °C/W
T
*
Reverse leakage current
**
Forward voltage drop
** tp = 380 µs,
δ < 2%
= 25°C
j
= 125°C
T
j
= 25°C
T
j
= 125°C
T
j
T
= 25°C
j
= 125°C
T
j
= V
V
R
I
= 10A
F
= 20A
I
F
F(AV)
RRM
+ 0.015 I
0.50 0.57
0.65 0.72
F2(RMS)
100 µA
715 mA
0.63
0.84
V
Figure 1: Average forward power dissipation
versus average forward current
P (W)
F(AV)
8
7
6
5
4
3
2
1
0
0123456789101112
δ = 0.05
δ = 0.1
δ = 0.2
I (A)
F(AV)
δ = 0.5
δ
=tp/T
δ = 1
T
tp
Figure 3: Normalized avalanche power
derating versus pulse duration
P(t)
ARM p
P (1µs)
ARM
1
0.1
0.01
t (µs)
0.001
0.10.01 1
p
10 100 1000
Figure 2: Average forward current versus
ambient temperature (δ = 0.5)
I (A)
F(AV)
12
10
8
6
R =70°C/W
4
2
0
0 25 50 75 100 125 150 175
th(j-a)
R=R
th(j-a) th(j-c)
R =15°C/W
th(j-a)
T (°C)
amb
Figure 4: Normalized avalanche power
derating versus junction temperature
P(t)
ARM p
P (25°C)
ARM
1.2
1
0.8
0.6
0.4
0.2
0
25 50 75 100 125 150
T (°C)
j
2/5
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