STP9NK50Z - STP9NK50ZFP
STB9NK50Z - STB9NK50Z-1
N-CHANNEL 500V - 0.72Ω - 7.2A TO-220/FP/D2PAK/I2PAK
Zener-Protected SuperMESH™ MOSFET
TYPE V
STP9NK50Z
STP9NK50ZFP
STB9NK50Z
STB9NK50Z-1
■ TYPICAL R
■ EXTREMELY HIGHdv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ GATE CHARGE MINIMIZED
■ VERY LOW INTRINSIC CAPACITANCES
■ VERY GOOD MANUFACTURING
500 V
500 V
500 V
500 V
(on) = 0.72 Ω
DS
DSS
R
DS(on)
<0.85Ω
<0.85Ω
<0.85Ω
<0.85Ω
I
D
7.2 A
7.2 A
7.2 A
7.2 A
Pw
110 W
30 W
110 W
110 W
REPEATIBILITY
DESCRIPTION
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing
on-resistance significantly down,specialcareis taken to ensur e a very good dv/dt capability for the
most dem anding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDm es h™ products.
TO-220
D2PAK
3
1
TO-220FP
I2PAK
INTERNAL SCHEMATIC DIAGRAM
3
2
1
3
2
1
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ IDEAL FOR OFF-LINE POWER SUPPLIES,
ADAPTORS AND PFC
■ LIGHTING
ORDERING INFORMATION
SALES TYPE MARKING PACKAGE PACKAGING
STP9NK50Z P9NK50Z TO-220 TUBE
STP9NK50ZFP P9NK50ZFP TO-220FP TUBE
STB9NK50ZT4 B9NK50Z
STB9NK50Z-1 B9NK50Z
2
PAK
D
2
I
PAK
TAPE & REEL
TUBE
1/13June 2004
STP9NK50Z - STP9NK50ZF P - STB9NK50Z - STB9NK50Z-1
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
STP9NK50Z
STB9NK50Z
STB9NK50Z-1
I
V
DM
P
V
DGR
V
I
I
TOT
DS
GS
D
D
Drain-source Voltage (VGS=0)
Drain-gate Voltage (RGS=20kΩ)
Gate- source Voltage ± 30 V
Drain Current (continuous) at TC=25°C
Drain Current (continuous) at TC= 100°C
()
Drain Current (pulsed) 28.8 28.8 (*) A
Total Dissipation at TC=25°C
7.2 7.2 (*) A
4.5 4.5 (*) A
110 30 W
Derating Factor 0.88 0.24 W/°C
V
ESD(G-S)
Gate source ESD(HBM-C=100pF, R=1.5KΩ) 3500 V
dv/dt (1) Peak Diode Recovery voltage slope 4.5 V/ns
V
ISO
T
j
T
stg
() Pulse width limited by safe operating area
≤7.2A, di/dt ≤200A/µs, VDD≤ V
(1) I
SD
(*) Limited only by maximum temperature allowed
Insulation Withstand Voltage (DC) - 2500 V
Operating Junction Temperature
Storage Temperature
(BR)DSS,Tj
≤ T
JMAX.
-55to150
-55to150
STP9NK50ZFP
500 V
500 V
°C
°C
THERMAL DATA
2
I
PAK
2
PAK /
TO-220FP
300 °C
TO-220 / D
Rthj-case Thermal Resistance Junction-case Max 1.14 4.2 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W
T
l
Maximum Lead Temperature For Soldering Purpose
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
I
AR
E
AS
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
max)
j
Single Pulse Avalanche Energy
(starting T
=25°C, ID=IAR,VDD=50V)
j
7.2 A
190 mJ
GATE-SOURCE ZENER DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
BV
GSO
Gate-Source Breakdown
Igs=± 1mA (Open Drain) 30 V
Voltage
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to souce. In this respect the Zener voltage is appropriate to achieve an efficient and c osteffective intervention to prote ct the d ev ice’s integrity. These integrated Zener diodes thus avoid the usage
of external component s.
2/13
STP9NK50Z - STP9NK50ZFP - STB9NK50Z - STB9NK50Z-1
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLES S OTHE RWISE SPECIFIED)
ON/OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
DSS
I
GSS
V
GS(th)
R
DS(on)
Zero Gate Voltage
Drain Current (V
GS
=0)
Gate-body Leakage
Current (V
DS
=0)
Gate Threshold Voltage
Static Drain-source On
Resistance
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
(1) Forward Transconductance VDS=15V,ID= 3.6 A 5.3 S
fs
C
oss eq.
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
(3) Equivalent Output
Capacitance
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
Q
Q
Q
t
r
g
gs
gd
Turn-on Delay Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
ID=1mA,VGS= 0 500 V
V
=MaxRating
DS
=MaxRating,TC= 125 °C
V
DS
V
= ± 20V ±10 µA
GS
V
DS=VGS,ID
= 100µA
3 3.75 4.5 V
1
50
VGS=10V,ID= 3.6 A 0.72 0.85 Ω
=25V,f=1MHz,VGS= 0 910
V
DS
125
30
VGS=0V,VDS= 0V to 400V 75 pF
VDD=250V,ID=3.6A
R
=4.7Ω VGS=10V
G
17
20
(Resistive Load see, Figure 3)
=400V,ID=7.2A,
V
DD
V
=10V
GS
32
6
18
µA
µA
pF
pF
pF
ns
ns
nC
nC
nC
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(off)
Turn-off Delay Time
t
f
FallTime
VDD=250V,ID=3.6A
R
=4.7Ω VGS=10V
G
45
22
(Resistive Load see, Figure 3)
t
r(Voff)
t
t
Off-voltage Rise Time
f
c
FallTime
Cross-over Time
=400V,ID=7.2A,
V
DD
RG=4.7Ω, VGS= 10V
(Inductive Load see, Figure 5)
15
13
30
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
VSD(1)
t
rr
Q
rr
I
RRM
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3. C
Source-drain Current
(2)
Source-drain Current (pulsed)
ForwardOnVoltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
is defined as a constant equivalent capacitance giving the same charging time as C
oss eq.
.
V
DSS
ISD=7.2A,VGS=0
I
SD
V
DD
(see test circuit, Figure 5)
= 7.2 A, di/dt = 100A/µs
=40V,Tj= 150°C
238
1.5
12.6
when VDSincreases from 0 to 80%
oss
7.2
28.8
1.6 V
ns
ns
ns
ns
ns
A
A
ns
µC
A
3/13
STP9NK50Z - STP9NK50ZF P - STB9NK50Z - STB9NK50Z-1
Safe Operating Area For TO-220/D2PAK/I2PAK Thermal Impedance For TO-220/D2PAK/I2PAK
Thermal Impedance For TO-220FPSafe Operating Area For TO-220FP
Output Characteristics
4/13
Transfer Characteristics
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