ST MICROELECTRONICS STP 80NF10 STM Datasheet
N-channel 100 V, 0.012 Ω, 80 A, TO-220, D2PA K
low gate charge STripFET™ II Power MOSFET
Features
Type V
DSS
R
STP80NF10 100 V < 0.015 Ω 80 A
STB80NF10 100 V < 0.015 Ω 80 A
DS(on)
max
STB80NF10
STP80NF10
I
D
■ Exceptional dv/dt capability
■ 100% Avalanche tested
■ Application oriented characterization
Applications
■ Switching applications
Description
This Power MOSFET series realized with
STMicroelectronics unique STripFET process has
specifically been designed to minimize input
capacitance and gate charge. It is therefore
suitable as primary switch in advanced highefficiency isolated DC-DC converters for telecom
and computer application. It is also intended for
any application with low gate charge drive
requirements.
3
TO-220
2
1
1
D²PAK
Figure 1. Internal schematic diagram
3
Table 1. Device summary
Order codes Marking Package Packaging
STP80NF10 P80NF10@ TO-220 Tube
STB80NF10T4 B80NF10@ D²PAK Tape and reel
April 2009 Doc ID 6958 Rev 18 1/14
www.st.com
14
Contents STB80NF10, STP80NF10
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
2/14 Doc ID 6958 Rev 18
STB80NF10, STP80NF10 Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
I
V
V
I
I
D
DM
P
DS
GS
D
(1)
TOT
(1)
Drain-source voltage (VGS = 0) 100 V
Gate- source voltage ±20 V
Drain current (continuous) at TC = 25 °C 80 A
Drain current (continuous) at TC = 100 °C 80 A
(2)
Drain current (pulsed) 320 A
Total dissipation at TC = 25 °C 300 W
Derating factor 2 W/°C
(3)
dv/dt
E
AS
T
stg
Tj
Peak diode recovery voltage slope 7 V/ns
(4)
Single pulse avalanche energy 350 mJ
Storage temperature
Operating junction temperature
-55 to 175 °C
1. Limited by package
2. Pulse width limited by safe operating area
3. ISD < 80 A, di/dt < 300 A/µs, VDD= 80% V
(BR)DSS
4. Starting Tj = 25 °C, ID = 40 A, VDD = 50 V
Table 3. Thermal resistance
Symbol Parameter Value Unit
Rthj-case Thermal resistance junction-case max 0.5 °C/W
Rthj-amb Thermal resistance junction-ambient max 62.5 °C/W
T
Maximum lead temperature for soldering purpose 300 °C
l
Doc ID 6958 Rev 18 3/14
Electrical characteristics STB80NF10, STP80NF10
2 Electrical characteristics
(T
=25 °C unless otherwise specified)
CASE
Table 4. On/off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
Drain-source
breakdown voltage
Zero gate voltage
drain current (VGS = 0)
Gate-body leakage
current (VDS = 0)
ID = 250 µA, VGS = 0 100 V
VDS = Max rating
50010nA
VDS = Max rating @125°C
VGS = ±20 V ±100 nA
Gate threshold voltage VDS = VGS, ID = 250 µA 2 3 4 V
Static drain-source on
resistance
= 10 V, ID = 40 A 0.012 0.015 Ω
V
GS
Table 5. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
(1)
g
fs
C
C
C
Q
Q
Q
1. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Forward transconductance VDS = 25 V , ID=40 A - 50 S
Input capacitance
iss
Output capacitance
oss
Reverse transfer
rss
capacitance
Total gate charge
g
Gate-source charge
gs
Gate-drain charge
gd
= 25 V, f = 1 MHz,
V
DS
= 0
V
GS
VDD = 50 V, ID = 80 A,
= 10 V
V
GS
5500
-
700
175
135
-
23
51.3
182 nC
µA
pF
pF
pF
nC
nC
Table 6. Switching times
Symbol Parameter Test conditions Min. Typ. Max. Unit
t
d(on)
t
d(off)
4/14 Doc ID 6958 Rev 18
Turn-on delay time
t
Rise time
r
Turn-off-delay time
t
Fall time
f
= 50 V, ID= 40 A,
V
DD
=4.7 Ω, VGS=10 V
R
G
(see Figure 15)
26
80
116
60
ns
ns
ns
ns
STB80NF10, STP80NF10 Electrical characteristics
Table 7. Source drain diode
Symbol Parameter Test conditions Min. Typ. Max Unit
I
SDM
V
I
I
SD
SD
t
Q
RRM
Source-drain current - 80 A
(1)
Source-drain current (pulsed) - 320 A
(2)
Forward on voltage ISD = 80 A, VGS = 0 - 1.3 V
Reverse recovery time
rr
Reverse recovery charge
rr
Reverse recovery current
1. Pulse width limited by safe operating area
2. Pulse duration=300µs, duty cycle 1.5%
ISD=80 A, VDD = 50 V
di/dt = 100 A/µs,
=150 °C
T
j
106
-
450
8.5
ns
nC
A
Doc ID 6958 Rev 18 5/14
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