ST MICROELECTRONICS STP 80NF10 STM Datasheet

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N-channel 100 V, 0.012 Ω, 80 A, TO-220, D2PA K

low gate charge STripFET™ II Power MOSFET

Features

Type V

DSS

STP80NF10 100 V < 0.015 Ω 80 A

STB80NF10 100 V < 0.015 Ω 80 A

DS(on)

max

STB80NF10

STP80NF10

■ Exceptional dv/dt capability

■ 100% Avalanche tested

■ Application oriented characterization

Applications

■ Switching applications

Description

This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highefficiency isolated DC-DC converters for telecom and computer application. It is also intended for any application with low gate charge drive requirements.

TO-220

D²PAK

Figure 1. Internal schematic diagram

Table 1. Device summary

Order codes Marking Package Packaging

STP80NF10 P80NF10@ TO-220 Tube

STB80NF10T4 B80NF10@ D²PAK Tape and reel

April 2009 Doc ID 6958 Rev 18 1/14

www.st.com

Contents STB80NF10, STP80NF10

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

2/14 Doc ID 6958 Rev 18

STB80NF10, STP80NF10 Electrical ratings

1 Electrical ratings

Table 2. Absolute maximum ratings

Symbol Parameter Value Unit

(1)

TOT

(1)

Drain-source voltage (VGS = 0) 100 V

Gate- source voltage ±20 V

Drain current (continuous) at TC = 25 °C 80 A

Drain current (continuous) at TC = 100 °C 80 A

(2)

Drain current (pulsed) 320 A

Total dissipation at TC = 25 °C 300 W

Derating factor 2 W/°C

(3)

dv/dt

stg

Peak diode recovery voltage slope 7 V/ns

(4)

Single pulse avalanche energy 350 mJ

Storage temperature Operating junction temperature

-55 to 175 °C

1. Limited by package

2. Pulse width limited by safe operating area

3. ISD < 80 A, di/dt < 300 A/µs, VDD= 80% V

(BR)DSS

4. Starting Tj = 25 °C, ID = 40 A, VDD = 50 V

Table 3. Thermal resistance

Symbol Parameter Value Unit

Rthj-case Thermal resistance junction-case max 0.5 °C/W

Rthj-amb Thermal resistance junction-ambient max 62.5 °C/W

Maximum lead temperature for soldering purpose 300 °C

Doc ID 6958 Rev 18 3/14

Electrical characteristics STB80NF10, STP80NF10

2 Electrical characteristics

=25 °C unless otherwise specified)

CASE

Table 4. On/off states

Symbol Parameter Test conditions Min. Typ. Max. Unit

(BR)DSS

DSS

GSS

GS(th)

DS(on)

Drain-source breakdown voltage

Zero gate voltage drain current (VGS = 0)

Gate-body leakage current (VDS = 0)

ID = 250 µA, VGS = 0 100 V

VDS = Max rating

50010nA

VDS = Max rating @125°C

VGS = ±20 V ±100 nA

Gate threshold voltage VDS = VGS, ID = 250 µA 2 3 4 V

Static drain-source on resistance

= 10 V, ID = 40 A 0.012 0.015 Ω

Table 5. Dynamic

Symbol Parameter Test conditions Min. Typ. Max. Unit

(1)

1. Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Forward transconductance VDS = 25 V , ID=40 A - 50 S

Input capacitance

iss

Output capacitance

oss

Reverse transfer

rss

capacitance

Total gate charge

Gate-source charge

Gate-drain charge

= 25 V, f = 1 MHz,

= 0

VDD = 50 V, ID = 80 A,

= 10 V

5500

700 175

135

51.3

182 nC

µA

pF pF pF

nC nC

Table 6. Switching times

Symbol Parameter Test conditions Min. Typ. Max. Unit

d(on)

d(off)

4/14 Doc ID 6958 Rev 18

Turn-on delay time

Rise time

Turn-off-delay time

Fall time

= 50 V, ID= 40 A,

=4.7 Ω, VGS=10 V

(see Figure 15)

26 80

116

ns ns

STB80NF10, STP80NF10 Electrical characteristics

Table 7. Source drain diode

Symbol Parameter Test conditions Min. Typ. Max Unit

SDM

RRM

Source-drain current - 80 A

(1)

Source-drain current (pulsed) - 320 A

(2)

Forward on voltage ISD = 80 A, VGS = 0 - 1.3 V

Reverse recovery time

Reverse recovery charge

Reverse recovery current

1. Pulse width limited by safe operating area

2. Pulse duration=300µs, duty cycle 1.5%

ISD=80 A, VDD = 50 V di/dt = 100 A/µs,

=150 °C

106

450

8.5

Doc ID 6958 Rev 18 5/14

Electrical characteristics STB80NF10, STP80NF10

2.1 Electrical characteristics (curves)

Figure 2. Safe operating area Figure 3. Thermal impedance

Figure 4. Output characteristics Figure 5. Transfer characteristics

Figure 6. Transconductance Figure 7. Static drain-source on resistance

6/14 Doc ID 6958 Rev 18

STB80NF10, STP80NF10 Electrical characteristics

Figure 8. Gate charge vs. gate-source voltage Figure 9. Capacitance variations

Figure 10. Normalized gate threshold voltage

vs. temperature

Figure 12. Source-drain diode forward

characteristics

Figure 11. Normalized on resistance vs.

temperature

Doc ID 6958 Rev 18 7/14

Test circuits STB80NF10, STP80NF10

3 Test circuits

Figure 13. Switching times test circuit for

resistive load

VGS

D.U.T.

2200

µF

3.3 µF

AM01468v1

Figure 15. Test circuit for inductive load

Ω

switching and diode recovery times

D.U. T.

FAST DIODE

L=100µH

3.3

µF

1000

µF

Figure 14. Gate charge test circuit

i=20V=VGMAX

2200 µF

1kΩ

12V

IG=CONST

2.7kΩ

47kΩ

100Ω

100nF

D.U.T.

AM01469v1

Figure 16. Unclamped inductive load test

circuit

D.U. T.

2200

µF

3.3 µF

1kΩ

VDD

AM01470v1

Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform

V(BR)DSS

IDM

VDD

AM01472v1

8/14 Doc ID 6958 Rev 18

10%

tdon

ton

90%

10%

VDS

90%

tdoff

AM01471v1

toff

90%

10%

AM01473v1

STB80NF10, STP80NF10 Package mechanical data

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK

packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark.

Doc ID 6958 Rev 18 9/14

Package mechanical data STB80NF10, STP80NF10

TO-220 mechanical data

Dim

Min Typ Max Min Typ Max

mm inch

A 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034

b1 1.14 1.70 0.044 0.066

c0.48 0.70 0.019 0.027

D 15.25 15.75 0.6 0.62

D1 1.27 0.050

E 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106

e1 4.95 5.15 0.194 0.202

F1.23 1.32 0.048 0.051

H1 6.20 6.60 0.244 0.256

J1 2.40 2.72 0.094 0.107

L13 14 0.511 0.551

L1 3.50 3.93 0.137 0.154 L20 16.40 0.645 L3028.90 1.137

∅P 3.75 3.85 0.147 0.151

Q2.65 2.95 0.104 0.116

10/14 Doc ID 6958 Rev 18

STB80NF10, STP80NF10 Package mechanical data

D²PAK (TO-263) mechanical data

Dim

Min Typ Max Min Typ Max

mm inch

A 4.40 4.60 0.173 0.181

A1 0.03 0.23 0.001 0.009

b 0.70 0.93 0.027 0.037

b2 1.14 1.70 0.045 0.067

c 0.45 0.60 0.017 0.024

c2 1.23 1.360.048 0.053

D 8.95 9.350.352 0.368

D1 7.50 0.295

E 10 10.40 0.3940.409

E1 8.50 0.334

e 2.54 0.1

e1 4.88 5.28 0.1920.208

H15 15.850.5900.624

J1 2.49 2.69 0.099 0.106

L2.29 2.79 0.090 0.110 L1 1.27 1.40 0.05 0.055 L2 1.30 1.75 0.051 0.069

R 0.4 0.016 V2 0° 8°0° 8°

0079457_M

Doc ID 6958 Rev 18 11/14

Packaging mechanical data STB80NF10, STP80NF10

5 Packaging mechanical data

D2PAK FOOTPRINT

TAPE AND REEL SHIPMENT

REEL MECHANICAL DATA

DIM.

A 330 12.992

B 1.5 0.059

C 12.8 13.2 0.504 0.520

D 20.2 0795

G 24.4 26.4 0.960 1.039

N 100 3.937

T 30.4 1.197

mm inch

MIN. MAX. MIN. MAX.

TAPE MECHANICAL DATA

DIM.

A0 10.5 10.7 0.413 0.421

B0 15.7 15.9 0.618 0.626

D 1.5 1.6 0.059 0.063

D1 1.59 1.61 0.062 0.063

E 1.65 1.85 0.065 0.073

F 11.4 11 .6 0.449 0.456

K0 4.8 5.0 0.189 0.197

P0 3.9 4.1 0.153 0.161

P1 11.9 12.1 0.468 0.476

P2 1.9 2.1 0.075 0.082

R 50 1.574

T 0.25 0.35 0.0098 0.0137

W 23.7 24.3 0.933 0.956

* on sales type

mm inch

MIN. MAX. MIN. MAX.

12/14 Doc ID 6958 Rev 18

BASE QTY BULK QTY

1000 1000

STB80NF10, STP80NF10 Revision history

6 Revision history

Table 8. Document revision history

Date Revision Changes

04-Nov-2003 8 New datasheet according to PCN DSG-TRA/03/382

13-Dec-2004 9 D²PAK inserted

16-Dec-2004 10 @ inserted in table 2 for TO-220 marking

27-Jan-2005 11 New value in table 3

22-Feb-2005 12 Id value changed

28-Feb-2005 13 New value in table 3

01-Mar-2005 14 Vgs value changed

06-Apr-2006 15 The document has been reformatted

25-Jan-2007 16 Typo mistake on page 1 (order codes)

17-Nov-2008 17 E

15-Apr-2009 18 I

value has been updated

value changed in Table 4: On/off states

DSS

Doc ID 6958 Rev 18 13/14

STB80NF10, STP80NF10

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14/14 Doc ID 6958 Rev 18

ST MICROELECTRONICS STP 80NF10 STM Datasheet

Specifications and Main Features

Frequently Asked Questions

User Manual

Figure 1. Internal schematic diagram

Table 1. Device summary

1 Electrical ratings

Table 2. Absolute maximum ratings

Table 3. Thermal resistance

2 Electrical characteristics

Table 4. On/off states

Table 5. Dynamic

Table 6. Switching times

Table 7. Source drain diode

2.1 Electrical characteristics (curves)

3 Test circuits

Figure 14. Gate charge test circuit

Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform

4 Package mechanical data

5 Packaging mechanical data

6 Revision history

Table 8. Document revision history