ST MICROELECTRONICS STP7NK80Z Datasheet

STB7NK80Z, STB7NK80Z-1

3

STP7NK80ZFP, STP7NK80Z

N-channel 800 V, 1.5 Ω, 5.2 A, TO-220,TO-220FP,D2PAK,I2PA K

Zener-protected SuperMESH™ Power MOSFET

Features

V

Type

DSS

(@Tjmax)

R

DS(on)

I

D

STP7NK80Z 800V < 1.8Ω 5.2A

STP7NK80ZFP 800V < 1.8Ω 5.2A

STB7NK80Z 800V < 1.8Ω 5.2A

STB7NK80Z-1 800V < 1.8Ω 5.2A

■ Extremely high dv/dt capability

■ 100% avalanche tested

■ Gate charge minimized

■ Very low intrinsic capacitances

■ Very good manufacturing repeatability

Applications

■ Switching application

Description

The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt
capability for the most demanding applications.
Such series complements ST full range of high
voltage Power MOSFETs including revolutionary
MDmesh™ products.

TO-220

D2PAK

3

1

TO-220FP

1

I2PAK

Figure 1. Internal schematic diagram

D(2)

G(1)

S(3)

2

1

3

2

AM01476v1

Table 1. Device summary

Order codes Marking Package Packaging

STB7NK80ZT4 B7NK80Z D²PAK Tape e reel

STB7NK80Z-1 B7NK80Z I²PAK

Tu beSTP7NK80Z P7NK80Z TO-220

STP7NK80ZFP P7NK80ZFP TO-220FP

March 2010 Doc ID 8979 Rev 6 1/17

www.st.com

17

Contents STB7NK80Z, STB7NK80Z-1, STP7NK80ZFP, STP7NK80Z

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

2/17 Doc ID 8979 Rev 6

STB7NK80Z, STB7NK80Z-1, STP7NK80ZFP, STP7NK80Z Electrical ratings

1 Electrical ratings

Table 2. Absolute maximum ratings

Value

Symbol Parameter

TO-220

D2PAK I2PAK

TO-220FP

Unit

Drain-source voltage (VGS = 0) 800 V

DS

Gate- source voltage ± 30 V

GS

I

Drain current (continuous) at TC = 25 °C 5.2 5.2

D

Drain current (continuous) at TC = 100 °C 3.3 3.3

I

D

(2)

Drain current (pulsed) 20.8 20.8

Total dissipation at TC = 25°C 125 30 W

TOT

I

DM

P

V

V

Derating factor 1 0.24 W/°C

V

ESD(G-S)

dv/dt

Gate source ESD
(HBM-C=100 pF, R=1.5 kΩ)

(3)

Peak diode recovery voltage slope 4.5 V/ns

Insulation withstand voltage (RMS) from

V

T

1. Limited only by maximum temperature allowed

2. Pulse width limited by safe operating area

3. ISD ≤ 5.2 A, di/dt ≤ 200 A/µs, VDD ≤ V

Table 3. Thermal data

all three leads to external heat sink

ISO

(t=1 s; T

Max operating junction temperature

T

j

Storage temperature

stg

= 25 °C)

C

(BR)DSS

, T

j

≤ T

JMAX.

(1)

(1)

(1)

4000 V

2500 V

-55 to 150

A

A

A

°C
°C

Value

Symbol Parameter

2

D

PAK I2PAK

300 °C

TO-220FP

R

thj-case

R

thj-amb

Table 4. Avalanche characteristics

Thermal resistance junction-case max 1 4.2 °C/W

Thermal resistance junction-ambient max 62.5 °C/W

Maximum lead temperature for soldering

T

l

purpose

TO-220

Symbol Parameter Value Unit

I

E

Avalanche current, repetitive or not-repetitive

AR

(pulse width limited by Tj Max)

Single pulse avalanche energy

AS

(starting T

= 25 °C, ID = IAR, V

J

DD

= 50 V)

5.2 A

210 mJ

Doc ID 8979 Rev 6 3/17

Unit

Electrical characteristics STB7NK80Z, STB7NK80Z-1, STP7NK80ZFP, STP7NK80Z

2 Electrical characteristics

(T

= 25 °C unless otherwise specified)

CASE

Table 5. On/off states

Symbol Parameter Test conditions Min. Typ. Max. Unit

V

(BR)DSS

I

DSS

I

GSS

V

GS(th)

R

DS(on)

Drain-source
Breakdown voltage

Zero gate voltage
Drain Current (VGS = 0)

Gate-body leakage
Current (VDS = 0)

ID =1 mA, VGS = 0 800 V

V

= Max rating

DS

V

= Max rating, TC = 125 °C

DS

1

50µAµA

VGS = ± 20 V ± 10 µA

Gate threshold voltage VDS = VGS, ID = 100 µA 3 3.75 4.5 V

Static drain-source on
resistance

= 10 V, ID = 2.6 A 1.5 1.8 Ω

V

GS

Table 6. Dynamic

Symbol Parameter Test conditions Min. Typ. Max. Unit

(1)

g

C

C

C

C

oss eq.

fs

(2)

Forward transconductance VDS = 15 V, ID = 2.6 A - 5 S

Input capacitance

iss

Output capacitance

oss

Reverse transfer

rss

capacitance

Equivalent output
capacitance

= 25 V, f = 1 MHz,

V

DS

= 0

V

GS

V

=0 , VDS = 0 to 640 V - 50 pF

DS

1138

-

122

25

pF
pF
pF

t

d(on)

t

r(off)

Q
Q
Q

t

r(Voff)

1. Pulsed: pulse duration=300µs, duty cycle 1.5%

2. C
increases from 0 to 80% V

Turn-on delay time

t

Rise time

r

Turn-off delay time

t

Fall time

r

Total gate charge

g

Gate-source charge

gs

Gate-drain charge

gd

Off-voltage rise time

t

Fall time

r

t

Cross-over time

c

is defined as a constant equivalent capacitance giving the same charging time as C

oss eq.

DSS

.

= 400 V, ID = 2.6 A,

V

DD

= 4.7 Ω, V

R

G

(see Figure 17)

VDD = 640 V, ID = 5.2 A,

= 10 V

V

GS

(see Figure 18)

VDD = 640 V, ID = 5.2 A,
RG = 4.7 Ω, V
(see Figure 17)

4/17 Doc ID 8979 Rev 6

GS

GS

= 10 V

= 10 V

20
12

­45

20

40

-

7

21

12

-

10
20

when VDS

oss

ns
ns
ns
ns

56 nC

nC
nC

ns
ns
ns

STB7NK80Z, STB7NK80Z-1, STP7NK80ZFP, STP7NK80Z Electrical characteristics

Table 7. Source drain diode

Symbol Parameter Test conditions Min. Typ. Max. Unit

I

I

SDM

V

SD

Q

I

RRM

1. Pulsed: pulse duration=300µs, duty cycle 1.5%

2. Pulse width limited by safe operating area

Source-drain current

SD

(1)

Source-drain current (pulsed)

(2)

Forward on voltage ISD = 5.2 A, VGS = 0 - 1.6 V

= 5.2 A, di/dt = 100

I

t

Reverse recovery time

rr

Reverse recovery charge

rr

Reverse recovery current

SD

A/µs

= 50 V, Tj = 150°C

V

DD

(see Figure 22)

-

530

-

3.31

12.5

5.2

20.8AA

ns

µC

A

Table 8. Gate-source zener diode

Symbol Parameter Test conditions Min. Typ. Max. Unit

BV

Gate-source breakdown voltage IGS= ± 1mA (open drain) 30 V

GSO

The built-in back-to-back Zener diodes have specifically been designed to enhance not only
the device’s ESD capability, but also to make them safely absorb possible voltage transients
that may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrity. These integrated Zener diodes thus avoid the usage of external components.

Doc ID 8979 Rev 6 5/17

Electrical characteristics STB7NK80Z, STB7NK80Z-1, STP7NK80ZFP, STP7NK80Z

2.1 Electrical characteristics (curves)

Figure 2. Safe operating area for TO-220,

2

D

PAK, I2PAK

Figure 3. Thermal impedance for TO-220,

D2PAK, I2PAK

Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP

Figure 6. Output characteristics Figure 7. Transfer characteristics

6/17 Doc ID 8979 Rev 6

STB7NK80Z, STB7NK80Z-1, STP7NK80ZFP, STP7NK80Z Electrical characteristics

Figure 8. Transconductance Figure 9. Static drain-source on resistance

Figure 10. Gate charge vs gate-source voltage Figure 11. Capacitance variations

Figure 12. Normalized gate threshold voltage

vs temperature

Doc ID 8979 Rev 6 7/17

Figure 13. Normalized on resistance vs

temperature

Electrical characteristics STB7NK80Z, STB7NK80Z-1, STP7NK80ZFP, STP7NK80Z

Figure 14. Source-drain diode forward

characteristic

Figure 16. Maximum avalanche energy vs

temperature

Figure 15. Normalized BVDSS vs temperature

8/17 Doc ID 8979 Rev 6

STB7NK80Z, STB7NK80Z-1, STP7NK80ZFP, STP7NK80Z Test circuits

3 Test circuits

Figure 17. Switching times test circuit for

PW

resistive load

VD

VGS

RG

RL

D.U.T.

2200

µF

3.3
µF

AM01468v1

V

DD

Figure 19. Test circuit for inductive load

G

25

Ω

switching and diode recovery times

A

D

D.U. T.

S

B

R

FAST
DIODE

G

A

A

L=100µH

B

B

D

G

S

3.3

µF

1000

µF

V

DD

Figure 18. Gate charge test circuit

V

i=20V=VGMAX

PW

2200
µF

1kΩ

12V

IG=CONST

2.7kΩ

47kΩ

47kΩ

100Ω

100nF

D.U.T.

AM01469v1

Figure 20. Unclamped inductive load test

circuit

L

VD

ID

Vi

D.U. T.

2200

µF

3.3
µF

1kΩ

VDD

V

VDD

G

Pw

AM01470v1

Figure 21. Unclamped inductive waveform Figure 22. Switching time waveform

V(BR)DSS

VD

IDM

ID

VDD

VDD

AM01472v1

0

0

10%

tdon

ton

90%

toff

tr

10%

tdoff

VDS

90%

V

GS

Doc ID 8979 Rev 6 9/17

AM01471v1

tf

90%

10%

AM01473v1

Package mechanical data STB7NK80Z, STB7NK80Z-1, STP7NK80ZFP, STP7NK80Z

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
specifications, grade definitions and product status are available at: www.st.com. ECOPACK
is an ST trademark.

®

packages, depending on their level of environmental compliance. ECOPACK®

10/17 Doc ID 8979 Rev 6

STB7NK80Z, STB7NK80Z-1, STP7NK80ZFP, STP7NK80Z Package mechanical data

Table 9. TO-220FP mechanical data

mm

Dim.

Min. Typ. Max.

A4.4 4.6

B2.5 2.7

D 2.5 2.75

E0.45 0.7

F0.75 1

F1 1.15 1.70

F2 1.15 1.70

G4.95 5.2

G1 2.4 2.7

H 10 10.4

L2 16

L3 28.6 30.6

L4 9.8 10.6

L5 2.9 3.6

L6 15.9 16.4

L7 9 9.3

Dia 3 3.2

Figure 23. TO-220FP drawing

L7

A

B

Dia

L6

H

D

L5

F2

F1

E

F

G

G1

L2

L3

L4

7012510_Rev_K

Doc ID 8979 Rev 6 11/17

Package mechanical data STB7NK80Z, STB7NK80Z-1, STP7NK80ZFP, STP7NK80Z

TO-220 type A mechanical data

Dim

Min Typ Max

mm

A 4.40 4.60

b 0.61 0.88

b1 1.14 1.70

c0.48 0.70
D 15.25 15.75

D1 1.27

E10 10.40
e 2.40 2.70

e1 4.95 5.15

F1.23 1.32

H1 6.20 6.60

J1 2.40 2.72

L13 14

L1 3.50 3.93
L20 16.40
L3028.90

∅P 3.75 3.85

Q 2.65 2.95

12/17 Doc ID 8979 Rev 6

0015988_Rev_S

STB7NK80Z, STB7NK80Z-1, STP7NK80ZFP, STP7NK80Z Package mechanical data

I²PAK (TO-262) mechanical data

Dim

Min Typ Max Min Typ Max

mm inch

A 4.40 4.60 0.173 0.181

A1 2.40 2.72 0.094 0.107

b 0.61 0.88 0.024 0.034

b1 1.14 1.70 0.044 0.066

c 0.49 0.70 0.019 0.027

c2 1.23 1.320.048 0.052

D 8.95 9.350.352 0.368

e 2.40 2.70 0.094 0.106

e1 4.95 5.15 0.194 0.202

E 10 10.40 0.393 0.410

L13 14 0.511 0.551
L1 3.50 3.93 0.137 0.154
L2 1.27 1.40 0.050 0.055

Doc ID 8979 Rev 6 13/17

Package mechanical data STB7NK80Z, STB7NK80Z-1, STP7NK80ZFP, STP7NK80Z

DPAK (TO-263) mechanical data

Dim

Min Typ Max Min Typ Max

hcnimm

181.0371.006.404.4A

900.0100.032.030.01A

730.0720.039.007.0b

760.0540.007.141.12b

4.0c

420.0710.006.05

350.0840.063.132.12c

863.0253.053.959.8D

592.005.71D

904.0493.004.0101E

433.005.81E

1.045.2e

82.588.41e

802.0291.0

426.0095.058.5151H

601.0990.096.294.21J

011.0090.097.292.2L

550.050.004.172.11L

3.12L

960.0150.057.10

610.04.0R
°8°0°8°02V

0079457_M

14/17 Doc ID 8979 Rev 6

STB7NK80Z, STB7NK80Z-1, STP7NK80ZFP, STP7NK80Z Packaging mechanical data

5 Packaging mechanical data

D2PAK FOOTPRINT

TAPE AND REEL SHIPMENT

TAPE MECHANICAL DATA

DIM.

A0 10.5 10.7 0.413 0.421

B0 15.7 15.9 0.618 0.626

D 1.5 1.6 0.059 0.063

D1 1.59 1.61 0.062 0.063

E 1.65 1.85 0.065 0.073

F 11. 4 11 .6 0.449 0.456

K0 4.8 5.0 0.189 0.197

P0 3.9 4.1 0.153 0.161

P1 11.9 12.1 0.468 0.476

P2 1.9 2.1 0.075 0.082

R 50 1.574

T 0.25 0.35 0.0098 0.0137

W 23.7 24.3 0.933 0.956

*

mm inch

MIN. MAX. MIN. MAX.

REEL MECHANICAL DATA

DIM.

A 330 12.992

B 1.5 0.059

C 12.8 13.2 0.504 0.520

D 20.2 0795

G 24.4 26.4 0.960 1.039

N 100 3.937

T 30.4 1.197

BASE QTY BULK QTY

mm inch

MIN. MAX. MIN. MAX.

1000 1000

Doc ID 8979 Rev 6 15/17

Revision history STB7NK80Z, STB7NK80Z-1, STP7NK80ZFP, STP7NK80Z

6 Revision history

Table 10. Revision history

Date Revision Changes

09-Sep-2004 3 Complete version

16-Aug-2006 4 New template, no content change

09-Oct-2006 5 Corrected order code

28-Mar-2010 6 Corrected Table 1: Device summary

16/17 Doc ID 8979 Rev 6

STB7NK80Z, STB7NK80Z-1, STP7NK80ZFP, STP7NK80Z

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Doc ID 8979 Rev 6 17/17