ST MICROELECTRONICS STP7NK40Z Datasheet

DPAK

1

2

3

TAB

TO-220

1

2

3

TO-220FP

1

3

2

TAB

D(2, TAB)

G(1)

S(3)

AM01475V1

STD7NK40ZT4, STP7NK40Z, STP7NK40ZFP

Datasheet

N-channel 400 V, 0.85 Ω typ., 5.4 A, SuperMESH™ Power MOSFETs

in DPAK, TO-220 and TO-220FP packages

Features

Product status links

STD7NK40ZT4

STP7NK40Z

STP7NK40ZFP

Order code

V

DS

STD7NK40ZT4

STP7NK40Z 70 W

400 V 1 Ω 5.4 A

R

max. I

DS(on)

D

P

TOT

70 W

STP7NK40ZFP 25 W

• Extremely high dv/dt capability

• 100% avalanche tested

• Gate charge minimized

• Very low intrinsic capacitance

• Zener-protected

Applications

• Switching applications

Description

These high-voltage devices are Zener-protected N-channel Power MOSFETs
developed using the SuperMESH™ technology by STMicroelectronics, an
optimization of the well-established PowerMESH™. In addition to a significant
reduction in on-resistance, these devices are designed to ensure a high level of dv/dt
capability for the most demanding applications.

Product summary

STD7NK40ZT4

Marking D7NK40Z

Package DPAK

Packing Tape and reel

STP7NK40Z

Marking P7NK40Z

Package TO-220

Packing Tube

STP7NK40ZFP

Marking P7NK40ZFP

Package TO-220FP

Packing Tube

DS2855 - Rev 3 - July 2018

For further information contact your local STMicroelectronics sales office.

www.st.com

1 Electrical ratings

STD7NK40ZT4, STP7NK40Z, STP7NK40ZFP

Electrical ratings

Table 1. Absolute maximum ratings

Symbol Parameter

V

V

DGR

V

DS

GS

Drain-source voltage 400 V

Drain-gate voltage (RGS = 20 kΩ)

Gate-source voltage ±30 V

Drain current (continuous) at TC = 25 °C

I

I

DM

P

TOT

I

AR

E

ESD

dv/dt

D

AS

Drain current (continuous) at TC = 100 °C

(2)

Drain current (pulsed) 21.6 21.6

Total dissipation at TC = 25 °C

Avalanche current, repetitive or non-repetitive

(pulse width is limited by TJ max.)

Single pulse avalanche energy

(starting TJ = 25 °C, ID = IAR, VDD = 50 V)

Gate-source, human body model,

R = 1.5 kΩ, C = 100 pF

(3)

Peak diode recovery voltage slope 4.5 V/ns

Insulation withstand voltage (RMS) from all

V

ISO

three leads to external heat sink

(t = 1 s, TC = 25 °C)

T

J

T

stg

Operating junction temperature range

Storage temperature range

1. This value is limited by maximum junction temperature.

2. Pulse width is limited by safe operating area.

3. ISD ≤ 5.4 A, di/dt ≤ 200 A/µs, VDD < V

(BR)DSS

Value

STD7NK40ZT4 STP7NK40Z STP7NK40ZFP

400 V

5.4 5.4

3.4 3.4

5.4

3.4

21.6

(1)

(1)

(1)

70 70 25 W

5.4 A

130 mJ

3 kV

2.5 kV

-55 to 150 °C

Unit

A

A

A

DS2855 - Rev 3

Table 2. Thermal data

Symbol

R

thj-case

R

thj-amb

R

thj-pcb

1. When mounted on an 1-inch² FR-4, 2 Oz copper board.

Thermal resistance junction-case 1.78 1.78 5 °C/W

Thermal resistance junction-ambient 62.5 °C/W

(1)

Thermal resistance junction-pcb 50 °C/W

Parameter

Value

Unit

DPAK TO-220 TO-220FP

page 2/22

2 Electrical characteristics

(TC = 25 °C unless otherwise specified)

Symbol Parameter Test conditions Min. Typ. Max. Unit

V

(BR)DSS

I

DSS

I

GSS

V

GS(th)

R

DS(on)

1. Defined by design, not subject to production test.

Drain-source breakdown voltage

Zero gate voltage drain current

Gate body leakage current

Gate threshold voltage

Static drain-source on-resistance

STD7NK40ZT4, STP7NK40Z, STP7NK40ZFP

Electrical characteristics

Table 3. On/off states

ID = 1 mA, VGS = 0 V

V

= 0 V, V

GS

V

= 0 V, V

GS

TC = 125 °C

DS

DS

(1)

= 400 V

= 400 V,

VGS = ±20 V, VDS = 0 V

VDS = VGS, ID = 50 µA

VGS = 10 V, ID = 2.7 A

400 V

3 3.75 4.5 V

0.85 1 Ω

1 µA

50 µA

±10 µA

1. C

Table 4. Dynamic

Symbol

C

iss

C

oss

C

rss

C

oss eq.

Q

g

Q

gs

Q

gd

oss eq.

to 80% V

Input capacitance

Output capacitance 82

Reverse transfer capacitance 18

(1)

Equivalent output capacitance

Total gate charge

Gate-source charge 4

Gate-drain charge 10

is defined as the constant equivalent capacitance giving the same charging time as C

.

DSS

Parameter Test conditions Min. Typ. Max. Unit

VDS = 25 V, f = 1 MHz, VGS = 0 V

VGS = 0 V, VDS = 0 to 320 V

VDD = 320 V, ID = 5.4 A,

VGS = 0 to 10 V

(see Figure 16. Test circuit for gate

charge behavior)

Table 5. Switching times

Symbol

t

d(on)

t

r

t

d(off)

t

f

t

r(Voff)

t

f

t

c

Turn-on delay time

Rise time 15

Turn-off delay time 30

Fall time 12

Off-voltage rise time

Fall time 10

Crossover time 20

Parameter Test conditions Min. Typ. Max. Unit

VDD = 200 V, ID = 2.7 A,

RG = 4.7 Ω, V

GS

= 10 V

(see Figure 15. Test circuit for

resistive load switching times and
Figure 20. Switching time
waveform)

VDD = 320 V, ID = 5.4 A,

RG = 4.7 Ω, VGS = 10 V

(see Figure 17. Test circuit for

inductive load switching and diode
recovery times)

535

-

- pF

- 53 - pF

19 26

-

when VDS increases from 0

oss

nC

15

-

-

ns

12

-

-

DS2855 - Rev 3

page 3/22

STD7NK40ZT4, STP7NK40Z, STP7NK40ZFP

Electrical characteristics

Table 6. Source-drain diode

Symbol Parameter Test conditions Min. Typ. Max. Unit

I

SD

(1)

I

SDM

(2)

V

SD

t

rr

Q

rr

I

RRM

1. Pulsed: pulse duration = 300 µs, duty cycle 1.5%.

2. Pulse width is limited by safe operating area.

Symbol Parameter Test conditions Min. Typ. Max. Unit

V

(BR)GSO

Source-drain current

5.4

-

Source-drain current (pulsed) 21.6

Forward on voltage

Reverse recovery time

Reverse recovery charge 990 nC

Reverse recovery current 9 A

ISD = 5.4 A, VGS = 0 V

ISD = 5.4 A, di/dt = 100 A/µs,

VDD = 50 V, TJ = 150 °C

(see Figure 17. Test circuit for

inductive load switching and diode

- 1.6 V

220 ns

-

recovery times)

Table 7. Gate-source Zener diode

Gate-source breakdown voltage

IGS = ±1 mA (open drain)

30 - - V

A

The built-in back-to-back Zener diodes are specifically designed to enhance the ESD performance of the device.
The Zener voltage facilitates efficient and cost-effective device integrity protection, thus eliminating the need for
additional external componentry.

DS2855 - Rev 3

page 4/22

2.1 Electrical characteristics (curves)

GC20940

10

-1

10

-2

10

-3

10 -410 -310 -210 -110

0

K

t p (s)

STD7NK40ZT4, STP7NK40Z, STP7NK40ZFP

Electrical characteristics (curves)

Figure 1. Safe operating area for TO-220/DPAK

Figure 3. Safe operating area for TO-220FP

Figure 2. Thermal impedance for TO-220/DPAK

Figure 4. Thermal impedance for TO-220FP

Figure 5. Output characteristics Figure 6. Transfer characteristics

DS2855 - Rev 3

page 5/22

STD7NK40ZT4, STP7NK40Z, STP7NK40ZFP

Electrical characteristics (curves)

Figure 7. Static drain-source on-resistance Figure 8. Gate charge vs gate-source voltage

Figure 9. Capacitance variations

Figure 11. Normalized on-resistance vs temperature

Figure 10. Normalized gate threshold voltage vs

temperature

Figure 12. Source-drain diode forward characteristics

DS2855 - Rev 3

-100

0

page 6/22

STD7NK40ZT4, STP7NK40Z, STP7NK40ZFP

Electrical characteristics (curves)

Figure 13. Normalized V

V

(BR)DSS

(norm.)

-100

(BR)DSS

vs temperature

Figure 14. Maximum avalanche energy vs temperature

DS2855 - Rev 3

page 7/22

3 Test circuits

AM01468v1

V

D

R

G

R

L

D.U.T.

2200

μF

V

DD

3.3
μF

+

pulse width

V

GS

AM01469v1

47 kΩ

1 kΩ

47 kΩ

2.7 kΩ

1 kΩ

12 V

IG= CONST

100 Ω

100 nF

D.U.T.

+

pulse width

V

GS

2200

μF

V

G

V

DD

AM01470v1

A

D

D.U.T.

S

B

G

25 Ω

A

A

B

B

R

G

G

D

S

100 µH

µF

3.3

1000
µF

V

DD

D.U.T.

+

_

+

fast
diode

AM01471v1

V

D

I

D

D.U.T.

L

V

DD

+

pulse width

V

i

3.3
µF

2200
µF

AM01472v1

V(BR)DSS

VDD

VDD

VD

IDM

ID

AM01473v1

0

V

GS

90%

V

DS

90%

10%

90%

10%

10%

t

on

t

d(on)

t

r

0

t

off

t

d(off)

t

f

STD7NK40ZT4, STP7NK40Z, STP7NK40ZFP

Test circuits

Figure 15. Test circuit for resistive load switching times

Figure 17. Test circuit for inductive load switching and

diode recovery times

Figure 16. Test circuit for gate charge behavior

Figure 18. Unclamped inductive load test circuit

DS2855 - Rev 3

Figure 19. Unclamped inductive waveform

Figure 20. Switching time waveform

page 8/22

4 Package information

STD7NK40ZT4, STP7NK40Z, STP7NK40ZFP

Package information

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK
packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions
and product status are available at: www.st.com. ECOPACK® is an ST trademark.

®

DS2855 - Rev 3

page 9/22

0068772_A_25

STD7NK40ZT4, STP7NK40Z, STP7NK40ZFP

4.1 DPAK (TO-252) type A package information

Figure 21. DPAK (TO-252) type A package outline

DPAK (TO-252) type A package information

DS2855 - Rev 3

page 10/22

STD7NK40ZT4, STP7NK40Z, STP7NK40ZFP

DPAK (TO-252) type A package information

Table 8. DPAK (TO-252) type A mechanical data

Dim.

Min. Typ. Max.

A 2.20 2.40

A1 0.90 1.10

A2 0.03 0.23

b 0.64 0.90

b4 5.20 5.40

c 0.45 0.60

c2 0.48 0.60

D 6.00 6.20

D1 4.95 5.10 5.25

E 6.40 6.60

E1 4.60 4.70 4.80

e 2.159 2.286 2.413

e1 4.445 4.572 4.699

H 9.35 10.10

L 1.00 1.50

(L1) 2.60 2.80 3.00

L2 0.65 0.80 0.95

L4 0.60 1.00

R 0.20

V2 0° 8°

mm

DS2855 - Rev 3

page 11/22

0068772_type-E_rev.25

STD7NK40ZT4, STP7NK40Z, STP7NK40ZFP

4.2 DPAK (TO-252) type E package information

Figure 22. DPAK (TO-252) type E package outline

DPAK (TO-252) type E package information

DS2855 - Rev 3

page 12/22

FP_0068772_25

STD7NK40ZT4, STP7NK40Z, STP7NK40ZFP

DPAK (TO-252) type E package information

Table 9. DPAK (TO-252) type E mechanical data

Dim.

Min. Typ. Max.

A 2.18 2.39

A2 0.13

b 0.65 0.884

b4 4.95 5.46

c 0.46 0.61

c2 0.46 0.60

D 5.97 6.22

D1 5.21

E 6.35 6.73

E1 4.32

e 2.286

e1 4.572

H 9.94 10.34

L 1.50 1.78

L1 2.74

L2 0.89 1.27

L4 1.02

mm

Figure 23. DPAK (TO-252) recommended footprint (dimensions are in mm)

DS2855 - Rev 3

page 13/22

4.3 DPAK (TO-252) packing information

P1

A0

D1

P0

F

W

E

D

B0

K0

T

User direction of feed

P2

10 pitches cumulative
tolerance on tape +/- 0.2 mm

User direction of feed

R

Bending radius

B1

For machine ref. only
including draft and
radii concentric around B0

AM08852v1

Top cover
tape

Figure 24. DPAK (TO-252) tape outline

STD7NK40ZT4, STP7NK40Z, STP7NK40ZFP

DPAK (TO-252) packing information

DS2855 - Rev 3

page 14/22

A

D

B

Full radius

Tape slot

in core for

tape start

2.5mm min.width

G measured

at hub

C

N

40mm min.
access hole
at slot location

T

AM06038v1

STD7NK40ZT4, STP7NK40Z, STP7NK40ZFP

Figure 25. DPAK (TO-252) reel outline

DPAK (TO-252) packing information

Table 10. DPAK (TO-252) tape and reel mechanical data

Tape

Dim.

A0 6.8 7 A 330

B0 10.4 10.6 B 1.5

B1 12.1 C 12.8 13.2

D 1.5 1.6 D 20.2

D1 1.5 G 16.4 18.4

E 1.65 1.85 N 50

F 7.4 7.6 T 22.4

K0 2.55 2.75

P0 3.9 4.1 Base qty. 2500

P1 7.9 8.1 Bulk qty. 2500

P2 1.9 2.1

R 40

T 0.25 0.35

W 15.7 16.3

Min. Max. Min. Max.

mm

Dim.

Reel

mm

DS2855 - Rev 3

page 15/22

4.4 TO-220 type A package information

0015988_typeA_Rev_21

Figure 26. TO-220 type A package outline

STD7NK40ZT4, STP7NK40Z, STP7NK40ZFP

TO-220 type A package information

DS2855 - Rev 3

page 16/22

STD7NK40ZT4, STP7NK40Z, STP7NK40ZFP

TO-220 type A package information

Table 11. TO-220 type A package mechanical data

Dim.

Min. Typ. Max.

A 4.40 4.60

b 0.61 0.88

b1 1.14 1.55

c 0.48 0.70

D 15.25 15.75

D1 1.27

E 10.00 10.40

e 2.40 2.70

e1 4.95 5.15

F 1.23 1.32

H1 6.20 6.60

J1 2.40 2.72

L 13.00 14.00

L1 3.50 3.93

L20 16.40

L30 28.90

øP 3.75 3.85

Q 2.65 2.95

mm

DS2855 - Rev 3

page 17/22

4.5 TO-220FP package information

7012510_Rev_12_B

Figure 27. TO-220FP package outline

STD7NK40ZT4, STP7NK40Z, STP7NK40ZFP

TO-220FP package information

DS2855 - Rev 3

page 18/22

STD7NK40ZT4, STP7NK40Z, STP7NK40ZFP

Table 12. TO-220FP package mechanical data

TO-220FP package information

Dim.

Min. Typ. Max.

A 4.4 4.6

B 2.5 2.7

D 2.5 2.75

E 0.45 0.7

F 0.75 1

F1 1.15 1.70

F2 1.15 1.70

G 4.95 5.2

G1 2.4 2.7

H 10 10.4

L2 16

L3 28.6 30.6

L4 9.8 10.6

L5 2.9 3.6

L6 15.9 16.4

L7 9 9.3

Dia 3 3.2

mm

DS2855 - Rev 3

page 19/22

Revision history

STD7NK40ZT4, STP7NK40Z, STP7NK40ZFP

Table 13. Document revision history

Date Version Changes

02-Sep-2002 2 Document updated.

Part number STD7NK40Z-1 was moved to a separate datasheet, and the
document was updated accordingly.

11-Jul-2018 3

Updated title, features, applications and description on cover page.

Updated Section 1 Electrical ratings, Section 2 Electrical characteristics,

Section 3 Test circuits and Section 4 Package information.

Minor text changes

DS2855 - Rev 3

page 20/22

STD7NK40ZT4, STP7NK40Z, STP7NK40ZFP

Contents

Contents

1 Electrical ratings ..................................................................2

2 Electrical characteristics...........................................................3

2.1 Electrical characteristics (curves) .................................................5

3 Test circuits .......................................................................8

4 Package information...............................................................9

4.1 DPAK (TO-252) type A package information ........................................9

4.2 DPAK (TO-252) type E package information .......................................11

4.3 DPAK (TO-252) packing information..............................................13

4.4 TO-220 type A package information ..............................................15

4.5 TO-220FP package information .................................................17

Revision history .......................................................................20

DS2855 - Rev 3

page 21/22

STD7NK40ZT4, STP7NK40Z, STP7NK40ZFP

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© 2018 STMicroelectronics – All rights reserved

DS2855 - Rev 3

page 22/22