STMicroelectronics STP7NB80, STP7NB80FP Technical data

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STP7NB80
N - CHANNEL 800V - 1.2Ω - 6.5A - TO-220/TO-220FP
TYPE V
STP7NB80 STP7NB80 FP
TYPICALR
EXTREMELYHIGH dv/dt CAPABILITY
100%AVALANCHETESTED
VERYLOW INTRINSIC CAPACITANCES
GATECHARGE MINIMIZED
DSS
800 V 800 V
= 1.2
DESCRIPTION
Using the latest high voltage MESH OVERLAY process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
R
DS(on)
<1.5 <1.5
I
D
6.5 A
6.5 A
STP7NB80FP
PowerMESHMOSFET
3
2
1
TO-220 TO-220FP
INTERNAL SCHEMATIC DIAGRAM
3
2
1
APPLICATIONS
HIGHCURRENT, HIGHSPEEDSWITCHING
SWITCHMODE POWER SUPPLIES(SMPS)
DC-AC CONVERTERS FOR WELDING
EQUIPMENTAND UNINTERRUPTIBLE POWERSUPPLIESAND MOTORDRIVE
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
ST P7 NB80 STP 7NB 80FP
V
V
V
I
DM
P
dv/ dt(
V
T
(•) Pulsewidth limited by safe operatingarea (1)ISD≤ 6.5A, di/dt ≤ 200 A/µs,VDD≤ V
*) Limitedonly maximumtemperature allowed
(
April 1999
Drain-sour ce Voltage (VGS=0) 800 V
DS
Drain- ga t e V olt a ge (RGS=20kΩ)
DGR
Gate-sourc e Voltage ± 30 V
GS
Drain C ur r ent (c on t in uous) at Tc=25oC6.56.5(*)A
I
D
Drain C ur r ent (c on t in uous) at Tc= 100oC4.14.1(*)A
I
D
800 V
() Drain C ur r ent (pulsed) 26 26 A
Total Dissipation at Tc=25oC 135 40 W
tot
Derating F actor 1.08 0.32 W/
1) Peak Diode Rec o very volt ag e slope 4.5 4.5 V/ns
Ins ulation W i th s tand Voltag e (DC) -- 2000
ISO
Sto rage T e m pe r ature -65 to 1 50
stg
Max. O pe rating Junction T em p er a t ure 150
T
j
(BR)DSS
,TjT
JMAX
o
C
o
C
o
C
o
C
1/9
STP7NB80/FP
THERMAL DATA
TO-220 TO-220FP
R
thj-case
R
thj-amb
R
thc-sink
T
AVALANCHE CHARACTERISTICS
Symbol Para meter Max Val ue Uni t
I
AR
E
Ther mal Resis t an ce Junc ti on-cas e Max 0.92 3.13 Ther mal Resis t an ce Junc ti on-ambien t Ma x
Thermal Resistance Case-sink Typ Maximum Le ad Temper at u r e For Sold er ing Purpos e
l
Avalanche Cu r rent, Repetitive or No t- Re petitiv e (pulse width limite d by T
Single Pu lse Avalanche Energy
AS
(starting T
=25oC, ID=IAR,VDD=50V)
j
max)
j
62.5
0.5
300
6.5 A
400 mJ
o
C/W
o
C/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS
=25oC unless otherwisespecified)
(T
case
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-sourc e
=250µAVGS=0
I
D
800 V
Break d own Voltage
I
DSS
I
GSS
Zero Gate Voltage Drain Current (V
GS
Gat e- b ody Leakage Current (V
DS
=0)
=0)
V
=MaxRating
DS
= Max Rating Tc=125oC
V
DS
=± 30 V
V
GS
1
50
± 100 nA
ON()
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
Gate Threshold
V
DS=VGSID
= 250µA
345V
Voltage
R
DS(on)
Static Drain-source O n
VGS=10V ID= 3.2 A 1.2 1.5
Resistanc e
I
D(on)
On State Drain Cu r rent VDS>I
D(on)xRDS(on)max
6.5 A
VGS=10V
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
(∗)Forward
fs
Tr ansconduc tance
C
C
C
Input Capacit ance
iss
Out put Ca pacita nce
oss
Reverse T ransfer
rss
Capacitance
VDS>I
D(on)xRDS(on)maxID
=3.2A 1.5 6.5 S
VDS=25V f=1MHz VGS= 0 1400
180
20
µ µA
pF pF pF
A
2/9
STP7NB80/FP
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
Turn-on Time
t
r
Rise Tim e
VDD= 400 V ID=3.5A
=4.7 VGS=10V
R
G
20 10
(see t est circuit, fi gure 3)
Q Q Q
Total Gate Charge
g
Gat e- Source Charge
gs
Gate-Drain Ch arge
gd
VDD= 640 V ID=7A VGS=10V
=4.7
R
G
40 10 18
52 nC
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
r(Voff)
t
t
Off -voltage R ise Time Fall Time
f
Cross-ov er T ime
c
VDD= 640 V ID=7A
=4.7 Ω VGS=10V
R
G
(see t est circuit, fi gure 5)
15 15 25
SOURCEDRAINDIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
V
SD
t
Q
I
RRM
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % () Pulse width limited by safe operatingarea
Source-drain C urrent
(•)
Source-drain C urrent
6.5 26
(pulsed)
(∗) Forwar d O n V oltage ISD=6.5A VGS=0 1.6 V
Reverse Recover y
rr
Time Reverse Recover y
rr
= 7 A di/d t = 100 A/µs
I
SD
= 100 V Tj=150oC
V
DD
(see t est circuit, fi gure 5)
750
7.10 Charge Reverse Recover y
19
Current
ns ns
nC nC
ns ns ns
A A
ns
µ
A
C
SafeOperating Area for TO-220 SafeOperating Area for TO-220FP
3/9
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