STMicroelectronics STP7NB60, STP7NB60FP Technical data
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3
N-CHANNEL 600V - 1.0 Ω - 7.2A TO-220/TO-220FP
STP7NB60
STP7NB60FP
PowerMESH™ MOSFET
Table 1. General Features
Typ e
STP7NB60 600 V < 1.2 Ω 7.2 A
STP7NB60FP 600 V < 1.2 Ω 4.1 A
V
DSS
R
DS(on)
I
D
FEATURES SUMMARY
■ TYPICAL R
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ VERY LOW INTRINSIC CAPACITANCES
■ GATE CHARGE MINIMIZED
DS(on)
= 1.0 Ω
DESCRIPTION
Using the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip
layout coupled with the Company’s proprietary
edge termination structure, gives the lowest
RDS(on) per area, exceptional avalanche and dv/
dt capabilities and unrivalled gate charge and
switching characteristics.
Figure 1. Package
3
2
1
TO-220 TO-220FP
Figure 2. Internal Schematic Diagram
2
1
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SWITCH MODE POWER SUPPLIES (SMPS)
■ DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
Table 2. Order Codes
Part Number Marking Package Packaging
STP7NB60 P7NB60 TO-220 TUBE
STP7NB60FP P7NB60FP TO-220FP TUBE
REV. 2
1/11April 2004
STP7NB60/FP
Table 3. Absolute Maximum Ratings
Symbol Parameter
Drain-source Voltage (VGS = 0) 600 V
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
P
tot
dv/dt
V
ISO
T
stg
T
j
Note: 1. Pulse width limited by safe operating area
2. ISD ≤ 7A, di/dt ≤ 200 A/µs, VDD ≤ V(
(1)
Drain- gate Voltage (RGS = 20 kΩ) 600 V
Gate-source Voltage ± 30 V
Drain Current (cont.) at TC = 25 °C 7.2 4.1 A
Drain Current (cont.) at TC = 100 °C 4.5 2.6 A
Drain Current (pulsed) 28.8 28.8 A
Total Dissipation at TC = 25 °C 125 40 W
Derating Factor 1.0 0.32 W°/C
(2)
Peak Diode Recovery voltage slope 4.5 4.5 V/ns
Insulation Withstand Voltage (DC) – 2000 V
Storage Temperature -65 to 150 °C
Max. Operating Junction Temperature 150 °C
BR)DSS
, Tj ≤ T
Val ue
Unit
STP7NB60 STP7NB60FP
JMAX
Table 4. Thermal Data
Symbol Parameter
R
thj-case
R
thj-amb
T
l
Thermal Resistance Junction-case Max 1.0 3.13 °C/W
Thermal Resistance Junction-ambient Max 62.5 °C/W
Maximum Lead Temperature For Soldering
Purpose
TO-220 TO220-FP
Val ue
300 °C
Table 5. Avalanche Characteristics
Symbol Parameter Max Value Unit
I
AR
E
AS
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
max, δ < 1%)
j
Single Pulse Avalanche Energy
(starting T
= 25 °C; ID = IAR; VDD = 50 V)
j
7.2 A
580 mJ
Unit
2/11
STP7NB60/FP
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise specified)
case
Table 6. Off
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
ID = 250 mA; VGS = 0 600 V
Breakdown Voltage
I
DSS
I
GSS
Zero Gate Voltage VDS = Max Rating 1 µA
Drain Current (VGS = 0) V
Gate-body Leakage
= Max Rating; Tc = 125 °C 50 µA
DS
VGS = ± 30 V ± 100 nA
Current (VDS = 0)
Table 7. On
(1)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
Gate Threshold Voltage VDS = VGS; ID = 250 µA345V
Static Drain-source On
VGS = 10V; ID = 3.6 A 1.0 1.2 Ω
Resistance
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Table 8. Dynamic
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(1)
fs
C
C
C
Transconductance
Input Capacitance VDS = 25 V; f = 1 MHz; VGS = 0 1250 1625 pF
iss
Output Capacitance 165 223 pF
oss
Reverse Transfer
rss
Forward
g
Capacitance
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
VDS > I
D(on)
x R
DS(on)max
; ID = 3.6 A 4 5.3 S
16 22 pF
Table 9. Switching On
Symbol Parameter Test Conditions Min. Typ. Max. Unit
td(on) Turn-on Time V
tr Rise Time V
Q
Q
Q
Total Gate Charge VDD = 480 V ID = 7.2 A VGS = 10 V 30 45 nC
g
Gate-Source Charge 9.9 nC
gs
Gate-Drain Charge 13.3 nC
gd
= 300 V; ID = 3.6 A RG = 4.7 Ω 18 27 ns
DD
= 10 V (see test circuit, Figure 18) 8 12 ns
GS
Table 10. Switching Off
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
r(Voff)
Off-voltage Rise Time VDD = 480 V; ID = 7.2 A; RG = 4.7 Ω 812ns
Fall Time VGS = 10 V (see test circuit, Figure 20) 5 8 ns
t
f
Cross-over Time 15 23 ns
t
c
3/11
STP7NB60/FP
Table 11. Source Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
V
SD
t
Q
I
RRAM
Note: 1. Pulse width limited by safe operating area
Figure 3. Safe Operating Area for TO-220 Figure 4. Safe Operating Area for TO-220FP
Source-drain Current 7.2 A
(1)
Source-drain Current
(pulsed)
(2)
Forward On Voltage ISD = 7.2 A VGS = 0 V
Reverse Recovery Time ISD = 7.2; A di/dt = 100 A/µs 530 ns
rr
Reverse RecoveryCharge VDD = 100 V Tj = 150 °C
rr
4.5 µC
(see test circuit, Figure 20)
Reverse RecoveryCharge 17 A
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
28.8 A
Figure 5. Thermal Impedance for TO-220 Figure 6. Thermal Impedance for TO-220FP
4/11
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