STMicroelectronics STP7NB60, STP7NB60FP Technical data

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STP7NB60

STP7NB60FP

N-CHANNEL 600V - 1.0 Ω - 7.2A TO-220/TO-220FP PowerMESH™ MOSFET

Table 1. General Features

Type	VDSS	RDS(on)	ID
STP7NB60	600 V	< 1.2 Ω	7.2 A
STP7NB60FP	600 V	< 1.2 Ω	4.1 A

FEATURES SUMMARY

■TYPICAL RDS(on) = 1.0 Ω

■EXTREMELY HIGH dv/dt CAPABILITY

■100% AVALANCHE TESTED

■VERY LOW INTRINSIC CAPACITANCES

■GATE CHARGE MINIMIZED

DESCRIPTION

Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/ dt capabilities and unrivalled gate charge and switching characteristics.

APPLICATIONS

■HIGH CURRENT, HIGH SPEED SWITCHING

■SWITCH MODE POWER SUPPLIES (SMPS)

■DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE

Table 2. Order Codes

Figure 1. Package

3	3
2	2
1	1
TO-220	TO-220FP

Figure 2. Internal Schematic Diagram

Part Number	Marking	Package	Packaging
STP7NB60	P7NB60	TO-220	TUBE
STP7NB60FP	P7NB60FP	TO-220FP	TUBE
			REV. 2
April 2004			1/11

STP7NB60/FP

Table 3. Absolute Maximum Ratings

Symbol	Parameter		Value		Unit
		STP7NB60		STP7NB60FP
VDS	Drain-source Voltage (VGS = 0)		600		V
VDGR	Draingate Voltage (RGS = 20 kΩ)		600		V
VGS	Gate-source Voltage		± 30		V
ID	Drain Current (cont.) at TC = 25 °C	7.2		4.1	A
ID	Drain Current (cont.) at TC = 100 °C	4.5		2.6	A
IDM (1)	Drain Current (pulsed)	28.8		28.8	A
Ptot	Total Dissipation at TC = 25 °C	125		40	W
	Derating Factor	1.0		0.32	W°/C
dv/dt (2)	Peak Diode Recovery voltage slope	4.5		4.5	V/ns
VISO	Insulation Withstand Voltage (DC)	–		2000	V
Tstg	Storage Temperature	-65 to 150			°C
Tj	Max. Operating Junction Temperature		150		°C

Note: 1. Pulse width limited by safe operating area

2. ISD ≤ 7A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX

Table 4. Thermal Data

Symbol	Parameter			Value		Unit
			TO-220		TO220-FP
Rthj-case	Thermal Resistance Junction-case	Max	1.0		3.13	°C/W
Rthj-amb	Thermal Resistance Junction-ambient	Max		62.5		°C/W
Tl	Maximum Lead Temperature For Soldering			300		°C
	Purpose

Table 5. Avalanche Characteristics

Symbol	Parameter	Max Value	Unit
IAR	Avalanche Current, Repetitive or Not-Repetitive	7.2	A
	(pulse width limited by Tj max, δ < 1%)
EAS	Single Pulse Avalanche Energy	580	mJ
	(starting Tj = 25 °C; ID = IAR; VDD = 50 V)

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STP7NB60/FP

ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise specified)

Table 6. Off

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
V(BR)DSS	Drain-source	ID = 250 mA; VGS = 0	600			V
	Breakdown Voltage
IDSS	Zero Gate Voltage	VDS = Max Rating			1	µA
	Drain Current (VGS = 0)	VDS = Max Rating; Tc = 125 °C			50	µA
IGSS	Gate-body Leakage	VGS = ± 30 V			± 100	nA
	Current (VDS = 0)

Table 7. On (1)

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
VGS(th)	Gate Threshold Voltage	VDS = VGS; ID = 250 µA	3	4	5	V
RDS(on)	Static Drain-source On	VGS = 10V; ID = 3.6 A		1.0	1.2	Ω
	Resistance

Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

Table 8. Dynamic

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
gfs (1)	Forward	VDS > ID(on) x RDS(on)max; ID = 3.6 A	4	5.3		S
	Transconductance
Ciss	Input Capacitance	VDS = 25 V; f = 1 MHz; VGS = 0		1250	1625	pF
Coss	Output Capacitance			165	223	pF
Crss	Reverse Transfer			16	22	pF
	Capacitance

Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

Table 9. Switching On

Symbol	Parameter		Test Conditions	Min.	Typ.	Max.	Unit
td(on)	Turn-on Time	VDD = 300	V; ID = 3.6 A RG = 4.7 Ω		18	27	ns
tr	Rise Time	VGS = 10 V (see test circuit, Figure 18)			8	12	ns
Qg	Total Gate Charge	VDD = 480	V ID = 7.2 A VGS = 10 V		30	45	nC
Qgs	Gate-Source Charge				9.9		nC
Qgd	Gate-Drain Charge				13.3		nC

Table 10. Switching Off

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
tr(Voff)	Off-voltage Rise Time	VDD = 480 V; ID = 7.2 A; RG = 4.7 Ω		8	12	ns
tf	Fall Time	VGS = 10 V (see test circuit, Figure 20)		5	8	ns
tc	Cross-over Time			15	23	ns

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STP7NB60/FP

Table 11. Source Drain Diode

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ISD

Source-drain Current

7.2

A

ISDM (1)

Source-drain Current

28.8

A

(pulsed)

VSD (2)

Forward On Voltage

ISD = 7.2 A VGS = 0

V

trr

Reverse Recovery Time

ISD = 7.2; A di/dt = 100 A/µs

530

ns

Qrr

Reverse RecoveryCharge

VDD = 100 V Tj = 150 °C

4.5

µC

(see test circuit, Figure 20)

IRRAM

Reverse RecoveryCharge

17

A

Note: 1. Pulse width limited by safe operating area

2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

Figure 3. Safe Operating Area for TO-220

Figure 4. Safe Operating Area for TO-220FP

Figure 5. Thermal Impedance for TO-220

Figure 6. Thermal Impedance for TO-220FP

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