N-channel Clamped - 7mΩ - 80A - TO-220
Fully protected MESH Overlay™ III Power MOSFET
General features
Type V
STP75NS04Z Clamped < 11mΩ 80A
■ Low capacitance and gate charge
■ 100% avalanche tested
■ 175°C maximum junction temperature
DSS
Description
This fully clamped MOSFET is produced by using
the latest advanced Company’s Mesh Overlay
process which is based on a novel strip layout.
The inherent benefits of a new technology
coupled with the extra clamping capabilities make
this product particularly suitable for the harshest
operation conditions such as those encoured in
power tools. Any other application requiring extra
ruggedness is also recommended.
R
DS(on)
I
D
STP75NS04Z
3
2
1
TO-220
Internal schematic diagram
Applications
■ Switching application
■ Power tools
Order codes
Part number Marking Package Packaging
STP75NS04Z P75NS04Z TO-220 Tube
June 2006 Rev 1 1/12
www.st.com
12
Contents STP75NS04Z
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2/12
STP75NS04Z Electrical ratings
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol Parameter Value Unit
I
DM
P
V
V
V
I
I
I
D
I
DG
GS
TOT
DS
DG
GS
(1)
D
Drain-source voltage (VGS = 0)
Drain-gate voltage (VGS = 0)
Gate-source voltage Clamped V
Drain current (continuous) at TC = 25°C
Drain current (continuous) at TC = 100°C
Drain gate current (continuos) ±50 mA
Gate source current (continuos) ±50 mA
(2)
Drain current (pulsed) 320 A
Total dissipation at TC = 25°C
Derating factor 0.73 W/°C
V
ESD
T
T
stg
1. Current limited by wire bonding
2. Pulse with limited by safe operating area
Gate-source ESD (HBM-C=100pF, R=1.5KΩ) ±8 kV
Operating junction temperature
j
Storage temperature
Table 2. Thermal data
Clamped V
Clamped V
80 A
63 A
110 W
-55 to 175 °C
Symbol Parameter Value Unit
R
thj-case
R
thj-amb
T
Thermal resistance junction-case Max 1.36 °C/W
Thermal resistance junction-ambient Max 62.5 °C/W
Maximum lead temperature for soldering purpose 300 °C
l
Table 3. Avalanche data
Symbol Parameter Value Unit
E
AS
Single pulse avalanche energy (starting Tj=25°C,
, VDD=25V)
I
D=IAR
470 mJ
3/12
Electrical characteristics STP75NS04Z
2 Electrical characteristics
(T
=25°C unless otherwise specified)
CASE
Table 4. On/off states
Symbol Parameter Test condictions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
V
GSS
V
GS(th)
R
DS(on)
Drain-source breakdown
voltage
Zero gate voltage drain
current (V
GS
= 0)
Gate body leakage current
(VDS = 0)
Gate threshold breakdown
voltage
Gate threshold voltage
Static drain-source on
resistance
= 1mA, VGS= 0
I
D
= 16V
V
DS
V
= ±10V
GS
IGS= ±100µA
= VGS, ID = 250µA
V
DS
VGS= 10V, ID= 40A
33 V
1µA
2 µA
18 V
234V
711mΩ
Table 5. Dynamic
Symbol Parameter Test condictions Min. Typ. Max. Unit
(1)
g
fs
C
C
C
Q
Q
Q
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
Forward transconductance
Input capacitance
iss
Output capacitance
oss
Reverse transfer
rss
capacitance
g
Total gate charge
Gate-source charge
gs
Gate-drain charge
gd
=15V, ID = 15A
V
DS
= 25V, f = 1 MHz,
V
DS
=0
V
GS
= 20V, ID= 80 A,
V
DD
= 10 V
V
GS
(see Figure 13)
50 S
1860
628
196
50
14
16
pF
pF
pF
nC
nC
nC
4/12
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