N-channel 900 V, 1.56 Ω typ., 5.8 A SuperMESH™ Power MOSFET
in D2PAK, TO-220, TO-220FP and TO-247 packages
Features
Product status
STB6NK90ZT4
STP6NK90Z
STP6NK90ZFP
STW7NK90Z
Order codesV
DS
R
max.I
DS(on)
D
STB6NK90ZT4
STP6NK90Z
STP6NK90ZFP
900 V2 Ω5.8 A
STW7NK90Z
•Extremely high dv/dt capability
•100% avalanche tested
•Gate charge minimized
•Zener-protected
Applications
•Switching applications
Description
These high-voltage devices are Zener-protected N-channel Power MOSFETs
developed using the SuperMESH™ technology by STMicroelectronics, an
optimization of the well-established PowerMESH™. In addition to a significant
reduction in on-resistance, these devices are designed to ensure a high level of dv/dt
capability for the most demanding applications.
DS2985 - Rev 6 - April 2018
For further information contact your local STMicroelectronics sales office.
www.st.com
Page 2
1Electrical ratings
STB6NK90ZT4, STP6NK90Z, STP6NK90ZFP, STW7NK90Z
Electrical ratings
Table 1. Absolute maximum ratings
SymbolParameter
V
DS
V
GS
I
D
I
D
IDM
P
TOT
dv/dt
V
ISO
T
T
stg
Drain-source voltage900V
Gate-source voltage± 30V
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC = 100 °C
(2)
Drain current (pulsed)23.223.2A
Total dissipation at TC = 25 °C
(3)
Peak diode recovery voltage slope4.5V/ns
Insulation withstand voltage (RMS) from all three
leads to external heat sink (t = 1 s; Tc = 25 °C)
Operating junction temperature range
j
Storage temperature range°C
1. Limited by maximum junction temperature.
2. Pulse width limited by safe operating area.
3. ISD ≤ 5.8 A, di/dt ≤ 200 A/µs, VDD ≤ V
(BR)DSS
.
Table 2. Thermal data
Value
D2PAK, TO-220, TO-247
5.8
3.65
14030W
-2500V
-55 to 150
TO-220FP
(1)
5.8
(1)
3.65
Unit
A
A
°C
Symbol
R
thj-case
R
thj-pcb
R
thj-amb
Symbol
I
AR
E
AS
Parameter
D2PAK
TO-220TO-220FPTO-247
Unit
Thermal resistance junction-case0.894.20.89°C/W
Thermal resistance junction-pcb60°C/W
Thermal resistance junction-ambient62.550°C/W
Table 3. Avalanche characteristics
ParameterValueUnit
Value
Avalanche current, repetitive or not-repetitive (pulse width limited by Tj Max)
Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V)
5.8A
300mJ
DS2985 - Rev 6
page 2/26
Page 3
STB6NK90ZT4, STP6NK90Z, STP6NK90ZFP, STW7NK90Z
2Electrical characteristics
(T
= 25 °C unless otherwise specified)
CASE
SymbolParameterTest conditionsMin.Typ.Max.Unit
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
1. Defined by design, not subject to production test.
Drain-source
Breakdown voltage
Zero gate voltage drain
current
Gate body leakage
current
Gate threshold voltage
Static drain-source on
resistance
Table 4. On/off states
ID = 1 mA, VGS = 0 V
VGS = 0 V, VDS = 900 V
VGS = 0 V, VDS = 900 V, TC = 125 °C
VDS = 0 V, VGS = ±20 V
VDS = VGS, ID = 100 µA
VGS = 10 V, ID = 2.9 A
Electrical characteristics
900V
1µA
(1)
50µA
±10µA
33.754.5V
1.562Ω
C
1. C
Table 5. Dynamic
Symbol
C
iss
C
oss
C
rss
(1)
oss eq.
t
d(on)
t
r
t
r(off)
t
r
Q
g
Q
gs
Q
gd
t
r(Voff)
t
r
t
c
is defined as a constant equivalent capacitance giving the same charging time as C
oss eq.
to 80% V
DSS
ParameterTest conditionsMin.Typ.Max.Unit
Input capacitance
Output capacitance130
VDS = 25 V, f = 1 MHz, VGS = 0 V
Reverse transfer
capacitance
Equivalent output
capacitance
VGS = 0 V, VDS = 0 V to 720 V
Turn-on delay time
Rise time20
Turn-off delay time45
VDD = 450 V, ID = 3 A, RG = 4.7 Ω,
VGS = 10 V (see Figure 17. Test circuit for
resistive load switching times and Figure
22. Switching time waveform)
Fall time20
Total gate charge
Gate-source charge8.5
Gate-drain charge25
Off-voltage rise time
Fall time12
Cross-over time20
VDD = 720 V, ID = 5.8 A, VGS = 0 to 10 V
(see Figure 18. Test circuit for gate charge
behavior)
VDD = 720 V, ID = 5.8 A, RG = 4.7 Ω,
VGS = 10 V (see Figure 19. Test circuit for
inductive load switching and diode recovery
times)
.
1350
26
70pF
17
46.560.5
11
when VDS increases from 0
oss
pF
ns
nC
ns
DS2985 - Rev 6
page 3/26
Page 4
STB6NK90ZT4, STP6NK90Z, STP6NK90ZFP, STW7NK90Z
Electrical characteristics
Table 6. Source drain diode
SymbolParameterTest conditionsMin.Typ.Max.Unit
I
SD
I
SDM
V
SD
t
rr
Q
I
RRM
SymbolParameterTest conditionsMin.Typ.Max.Unit
V
(BR)GSO
Source-drain current5.8
Source-drain current
(pulsed)
Forward on voltageISD = 5.8 A, VGS = 0 V1.6V
Reverse recovery timeISD = 5.8 A, di/dt = 100 A/µs
Reverse recovery charge5880nC
rr
Reverse recovery current14A
VDD = 36 V, Tj = 150 °C (see Figure
19. Test circuit for inductive load switching
and diode recovery times)
840ns
Table 7. Gate-source zener diode
Gate-source breakdown voltage
Igs = ±1 mA, ID = 0 A
±30V
23.2
A
The built-in back-to-back Zener diodes are specifically designed to enhance the ESD performance of the device.
The Zener voltage facilitates efficient and cost-effective device integrity protection, thus eliminating the need for
additional external componentry.
DS2985 - Rev 6
page 4/26
Page 5
GADG260320180900MT
GADG260320180901MT
GADG260320180902MT
GADG260320180903MT
GADG260320180904MT
GADG260320180905MT
STB6NK90ZT4, STP6NK90Z, STP6NK90ZFP, STW7NK90Z
2.1Electrical characteristics curves
Electrical characteristics curves
Figure 1. Safe operating area for TO-220/D2PAK
Figure 3. Safe operating area for TO-220FP
Figure 2. Thermal impedance for TO-220/D2PAK
Figure 4. Thermal impedance for TO-220FP
Figure 5. Safe operating area for TO-247
DS2985 - Rev 6
Figure 6. Thermal impedance for TO-247
page 5/26
Page 6
GADG260320180906MT
GADG260320180907MT
GADG260320180909MT
GADG260320180910MT
GADG260320180911MT
GADG260320180912MT
STB6NK90ZT4, STP6NK90Z, STP6NK90ZFP, STW7NK90Z
Electrical characteristics curves
Figure 7. Output characterisics
Figure 9. Static drain-source on resistance
Figure 8. Transfer characteristics
Figure 10. Gate charge vs gate-source voltage
Figure 11. Capacitance variations
Figure 12. Normalized gate threshold voltage vs
temperature
DS2985 - Rev 6
page 6/26
Page 7
GADG260320180913MT
GADG260320180914MT
GADG260320180915MT
GADG260320180916MT
STB6NK90ZT4, STP6NK90Z, STP6NK90ZFP, STW7NK90Z
Electrical characteristics curves
Figure 13. Normalized on resistance vs temperature
Figure 16. Maximum avalanche energy vs temperature
DS2985 - Rev 6
page 7/26
Page 8
3Test circuits
AM01468v1
V
D
R
G
R
L
D.U.T.
2200
μF
V
DD
3.3
μF
+
pulse width
V
GS
AM01469v1
47 kΩ
1 kΩ
47 kΩ
2.7 kΩ
1 kΩ
12 V
IG= CONST
100 Ω
100 nF
D.U.T.
+
pulse width
V
GS
2200
μF
V
G
V
DD
AM01470v1
A
D
D.U.T.
S
B
G
25 Ω
A
A
B
B
R
G
G
D
S
100 µH
µF
3.3
1000
µF
V
DD
D.U.T.
+
_
+
fast
diode
AM01471v1
V
D
I
D
D.U.T.
L
V
DD
+
pulse width
V
i
3.3
µF
2200
µF
AM01472v1
V(BR)DSS
VDD
VDD
VD
IDM
ID
AM01473v1
0
V
GS
90%
V
DS
90%
10%
90%
10%
10%
t
on
t
d(on)
t
r
0
t
off
t
d(off)
t
f
STB6NK90ZT4, STP6NK90Z, STP6NK90ZFP, STW7NK90Z
Test circuits
Figure 17. Test circuit for resistive load switching times
Figure 19. Test circuit for inductive load switching and
diode recovery times
Figure 18. Test circuit for gate charge behavior
Figure 20. Unclamped inductive load test circuit
DS2985 - Rev 6
Figure 21. Unclamped inductive waveform
Figure 22. Switching time waveform
page 8/26
Page 9
STB6NK90ZT4, STP6NK90Z, STP6NK90ZFP, STW7NK90Z
4Package information
Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK
packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions
and product status are available at: www.st.com. ECOPACK® is an ST trademark.
®
DS2985 - Rev 6
page 9/26
Page 10
0079457_24
STB6NK90ZT4, STP6NK90Z, STP6NK90ZFP, STW7NK90Z
4.1D²PAK (TO-263) package information
Figure 23. D²PAK (TO-263) type A package outline
D²PAK (TO-263) package information
DS2985 - Rev 6
page 10/26
Page 11
STB6NK90ZT4, STP6NK90Z, STP6NK90ZFP, STW7NK90Z
D²PAK (TO-263) package information
Table 8. D²PAK (TO-263) type A package mechanical data
Dim.
Min.Typ.Max.
A4.404.60
A10.030.23
b0.700.93
b21.141.70
c0.450.60
c21.231.36
D8.959.35
D17.507.758.00
D21.101.301.50
E10.0010.40
E18.508.708.90
E26.857.057.25
e2.54
e14.885.28
H15.0015.85
J12.492.69
L2.292.79
L11.271.40
L21.301.75
R0.40
V20°8°
mm
DS2985 - Rev 6
page 11/26
Page 12
0079457_24_B
STB6NK90ZT4, STP6NK90Z, STP6NK90ZFP, STW7NK90Z
D²PAK (TO-263) package information
Figure 24. D²PAK (TO-263) type B package outline
DS2985 - Rev 6
page 12/26
Page 13
STB6NK90ZT4, STP6NK90Z, STP6NK90ZFP, STW7NK90Z
D²PAK (TO-263) package information
Table 9. D²PAK (TO-263) type B mechanical data
Dim.
Min.Typ.Max.
A4.364.56
A100.25
b0.700.90
b10.510.89
b21.171.37
b31.361.46
c0.380.694
c10.380.534
c21.191.34
D8.609.00
D16.907.50
E10.1510.55
E18.108.70
e2.54 BSC
H15.0015.60
L1.902.50
L11.65
L21.78
L30.25
L44.785.28
mm
DS2985 - Rev 6
page 13/26
Page 14
Footprint
STB6NK90ZT4, STP6NK90Z, STP6NK90ZFP, STW7NK90Z
D²PAK (TO-263) package information
Figure 25. D²PAK (TO-263) recommended footprint (dimensions are in mm)
DS2985 - Rev 6
page 14/26
Page 15
0015988_typeA_Rev_21
STB6NK90ZT4, STP6NK90Z, STP6NK90ZFP, STW7NK90Z
4.2TO-220 type A package information
Figure 26. TO-220 type A package outline
TO-220 type A package information
DS2985 - Rev 6
page 15/26
Page 16
STB6NK90ZT4, STP6NK90Z, STP6NK90ZFP, STW7NK90Z
TO-220 type A package information
Table 10. TO-220 type A package mechanical data
Dim.
Min.Typ.Max.
A4.404.60
b0.610.88
b11.141.55
c0.480.70
D15.2515.75
D11.27
E10.0010.40
e2.402.70
e14.955.15
F1.231.32
H16.206.60
J12.402.72
L13.0014.00
L13.503.93
L2016.40
L3028.90
øP3.753.85
Q2.652.95
mm
DS2985 - Rev 6
page 16/26
Page 17
0015988_H_21
STB6NK90ZT4, STP6NK90Z, STP6NK90ZFP, STW7NK90Z
4.3TO-220 type H package information
Figure 27. TO-220 type H package outline
TO-220 type H package information
DS2985 - Rev 6
page 17/26
Page 18
STB6NK90ZT4, STP6NK90Z, STP6NK90ZFP, STW7NK90Z
TO-220 type H package information
Table 11. TO-220 type H package mechanical data
Dim.
Min.Typ.Max.
A4.404.454.50
A11.221.32
A22.492.592.69
A31.171.271.37
b0.780.87
b21.251.34
b41.201.29
b61.50
b71.45
c0.490.56
D15.4015.5015.60
D19.059.159.25
E10.0810.1810.28
e2.442.542.64
e14.985.085.18
H16.256.356.45
L13.2013.4013.60
L13.503.703.90
L216.3016.4016.50
L328.7028.9029.10
∅P3.753.803.85
Q2.702.802.90
mm
DS2985 - Rev 6
page 18/26
Page 19
7012510_Rev_12_B
STB6NK90ZT4, STP6NK90Z, STP6NK90ZFP, STW7NK90Z
4.4TO-220FP package information
Figure 28. TO-220FP package outline
TO-220FP package information
DS2985 - Rev 6
page 19/26
Page 20
STB6NK90ZT4, STP6NK90Z, STP6NK90ZFP, STW7NK90Z
TO-220FP package information
Table 12. TO-220FP package mechanical data
Dim.
Min.Typ.Max.
A4.44.6
B2.52.7
D2.52.75
E0.450.7
F0.751
F11.151.70
F21.151.70
G4.955.2
G12.42.7
H1010.4
L216
L328.630.6
L49.810.6
L52.93.6
L615.916.4
L799.3
Dia33.2
mm
DS2985 - Rev 6
page 20/26
Page 21
0075325_9
STB6NK90ZT4, STP6NK90Z, STP6NK90ZFP, STW7NK90Z
4.5TO-247 package information
TO-247 package information
Figure 29. TO-247 package outline
DS2985 - Rev 6
page 21/26
Page 22
STB6NK90ZT4, STP6NK90Z, STP6NK90ZFP, STW7NK90Z
TO-247 package information
Table 13. TO-247 package mechanical data
Dim.
Min.Typ.Max.
A4.855.15
A12.202.60
b1.01.40
b12.02.40
b23.03.40
c0.400.80
D19.8520.15
E15.4515.75
e5.305.455.60
L14.2014.80
L13.704.30
L218.50
ØP3.553.65
ØR4.505.50
S5.305.505.70
mm
DS2985 - Rev 6
page 22/26
Page 23
STB6NK90ZT4, STP6NK90Z, STP6NK90ZFP, STW7NK90Z
5Ordering information
Order codeMarkingPackagePacking
STB6NK90ZT4B6NK90Z
STP6NK90ZP6NK90ZTO-220Tube
STP6NK90ZFPP6NK90ZFPTO-220FPTube
STW7NK90ZW7NK90ZTO-247Tube
Table 14. Order codes
D2PAK
Ordering information
Tape e reel
DS2985 - Rev 6
page 23/26
Page 24
Revision history
STB6NK90ZT4, STP6NK90Z, STP6NK90ZFP, STW7NK90Z
Table 15. Document revision history
DateVersionChanges
29-Nov-20053Complete version
16-Aug-20064New template, no content change
10-Apr-20075Typo mistake on Table 2
Removed maturity status indication from cover page. The document status is
04-Apr-20186
production data.
Updated Table 5. Dynamic and Table 6. Source drain diode.
5Ordering information .............................................................23
Revision history .......................................................................24
DS2985 - Rev 6
page 25/26
Page 26
STB6NK90ZT4, STP6NK90Z, STP6NK90ZFP, STW7NK90Z
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