ST MICROELECTRONICS STP6NK90ZFP Datasheet

1

2

3

TO-247

1

2

3

TAB

TO-220

1

3

TAB

D PAK

2

1

2

3

TO-220FP

D(2, TAB)

G(1)

S(3)

AM01475V1

STB6NK90ZT4, STP6NK90Z

STP6NK90ZFP, STW7NK90Z

Datasheet

N-channel 900 V, 1.56 Ω typ., 5.8 A SuperMESH™ Power MOSFET

in D2PAK, TO-220, TO-220FP and TO-247 packages

Features

Product status

STB6NK90ZT4

STP6NK90Z

STP6NK90ZFP

STW7NK90Z

Order codes V

DS

R

max. I

DS(on)

D

STB6NK90ZT4

STP6NK90Z

STP6NK90ZFP

900 V 2 Ω 5.8 A

STW7NK90Z

• Extremely high dv/dt capability

• 100% avalanche tested

• Gate charge minimized

• Zener-protected

Applications

• Switching applications

Description

These high-voltage devices are Zener-protected N-channel Power MOSFETs
developed using the SuperMESH™ technology by STMicroelectronics, an
optimization of the well-established PowerMESH™. In addition to a significant
reduction in on-resistance, these devices are designed to ensure a high level of dv/dt
capability for the most demanding applications.

DS2985 - Rev 6 - April 2018
For further information contact your local STMicroelectronics sales office.

www.st.com

1 Electrical ratings

STB6NK90ZT4, STP6NK90Z, STP6NK90ZFP, STW7NK90Z

Electrical ratings

Table 1. Absolute maximum ratings

Symbol Parameter

V

DS

V

GS

I

D

I

D

IDM

P

TOT

dv/dt

V

ISO

T

T

stg

Drain-source voltage 900 V

Gate-source voltage ± 30 V

Drain current (continuous) at TC = 25 °C

Drain current (continuous) at TC = 100 °C

(2)

Drain current (pulsed) 23.2 23.2 A

Total dissipation at TC = 25 °C

(3)

Peak diode recovery voltage slope 4.5 V/ns

Insulation withstand voltage (RMS) from all three

leads to external heat sink (t = 1 s; Tc = 25 °C)

Operating junction temperature range

j

Storage temperature range °C

1. Limited by maximum junction temperature.

2. Pulse width limited by safe operating area.

3. ISD ≤ 5.8 A, di/dt ≤ 200 A/µs, VDD ≤ V

(BR)DSS

.

Table 2. Thermal data

Value

D2PAK, TO-220, TO-247

5.8

3.65

140 30 W

- 2500 V

-55 to 150

TO-220FP

(1)

5.8

(1)

3.65

Unit

A

A

°C

Symbol

R

thj-case

R

thj-pcb

R

thj-amb

Symbol

I

AR

E

AS

Parameter

D2PAK

TO-220 TO-220FP TO-247

Unit

Thermal resistance junction-case 0.89 4.2 0.89 °C/W

Thermal resistance junction-pcb 60 °C/W

Thermal resistance junction-ambient 62.5 50 °C/W

Table 3. Avalanche characteristics

Parameter Value Unit

Value

Avalanche current, repetitive or not-repetitive (pulse width limited by Tj Max)

Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V)

5.8 A

300 mJ

DS2985 - Rev 6

page 2/26

STB6NK90ZT4, STP6NK90Z, STP6NK90ZFP, STW7NK90Z

2 Electrical characteristics

(T

= 25 °C unless otherwise specified)

CASE

Symbol Parameter Test conditions Min. Typ. Max. Unit

V

(BR)DSS

I

DSS

I

GSS

V

GS(th)

R

DS(on)

1. Defined by design, not subject to production test.

Drain-source

Breakdown voltage

Zero gate voltage drain
current

Gate body leakage
current

Gate threshold voltage

Static drain-source on
resistance

Table 4. On/off states

ID = 1 mA, VGS = 0 V

VGS = 0 V, VDS = 900 V

VGS = 0 V, VDS = 900 V, TC = 125 °C

VDS = 0 V, VGS = ±20 V

VDS = VGS, ID = 100 µA

VGS = 10 V, ID = 2.9 A

Electrical characteristics

900 V

1 µA

(1)

50 µA

±10 µA

3 3.75 4.5 V

1.56 2 Ω

C

1. C

Table 5. Dynamic

Symbol

C

iss

C

oss

C

rss

(1)

oss eq.

t

d(on)

t

r

t

r(off)

t

r

Q

g

Q

gs

Q

gd

t

r(Voff)

t

r

t

c

is defined as a constant equivalent capacitance giving the same charging time as C

oss eq.

to 80% V

DSS

Parameter Test conditions Min. Typ. Max. Unit

Input capacitance

Output capacitance 130

VDS = 25 V, f = 1 MHz, VGS = 0 V

Reverse transfer
capacitance

Equivalent output
capacitance

VGS = 0 V, VDS = 0 V to 720 V

Turn-on delay time

Rise time 20

Turn-off delay time 45

VDD = 450 V, ID = 3 A, RG = 4.7 Ω,
VGS = 10 V (see Figure 17. Test circuit for

resistive load switching times and Figure

22. Switching time waveform)

Fall time 20

Total gate charge

Gate-source charge 8.5

Gate-drain charge 25

Off-voltage rise time

Fall time 12

Cross-over time 20

VDD = 720 V, ID = 5.8 A, VGS = 0 to 10 V
(see Figure 18. Test circuit for gate charge

behavior)

VDD = 720 V, ID = 5.8 A, RG = 4.7 Ω,
VGS = 10 V (see Figure 19. Test circuit for

inductive load switching and diode recovery
times)

.

1350

26

70 pF

17

46.5 60.5

11

when VDS increases from 0

oss

pF

ns

nC

ns

DS2985 - Rev 6

page 3/26

STB6NK90ZT4, STP6NK90Z, STP6NK90ZFP, STW7NK90Z

Electrical characteristics

Table 6. Source drain diode

Symbol Parameter Test conditions Min. Typ. Max. Unit

I

SD

I

SDM

V

SD

t

rr

Q

I

RRM

Symbol Parameter Test conditions Min. Typ. Max. Unit

V

(BR)GSO

Source-drain current 5.8

Source-drain current
(pulsed)

Forward on voltage ISD = 5.8 A, VGS = 0 V 1.6 V

Reverse recovery time ISD = 5.8 A, di/dt = 100 A/µs

Reverse recovery charge 5880 nC

rr

Reverse recovery current 14 A

VDD = 36 V, Tj = 150 °C (see Figure

19. Test circuit for inductive load switching
and diode recovery times)

840 ns

Table 7. Gate-source zener diode

Gate-source breakdown voltage

Igs = ±1 mA, ID = 0 A

±30 V

23.2

A

The built-in back-to-back Zener diodes are specifically designed to enhance the ESD performance of the device.
The Zener voltage facilitates efficient and cost-effective device integrity protection, thus eliminating the need for
additional external componentry.

DS2985 - Rev 6

page 4/26

GADG260320180900MT

GADG260320180901MT

GADG260320180902MT

GADG260320180903MT

GADG260320180904MT

GADG260320180905MT

STB6NK90ZT4, STP6NK90Z, STP6NK90ZFP, STW7NK90Z

2.1 Electrical characteristics curves

Electrical characteristics curves

Figure 1. Safe operating area for TO-220/D2PAK

Figure 3. Safe operating area for TO-220FP

Figure 2. Thermal impedance for TO-220/D2PAK

Figure 4. Thermal impedance for TO-220FP

Figure 5. Safe operating area for TO-247

DS2985 - Rev 6

Figure 6. Thermal impedance for TO-247

page 5/26

GADG260320180906MT

GADG260320180907MT

GADG260320180909MT

GADG260320180910MT

GADG260320180911MT

GADG260320180912MT

STB6NK90ZT4, STP6NK90Z, STP6NK90ZFP, STW7NK90Z

Electrical characteristics curves

Figure 7. Output characterisics

Figure 9. Static drain-source on resistance

Figure 8. Transfer characteristics

Figure 10. Gate charge vs gate-source voltage

Figure 11. Capacitance variations

Figure 12. Normalized gate threshold voltage vs

temperature

DS2985 - Rev 6

page 6/26

GADG260320180913MT

GADG260320180914MT

GADG260320180915MT

GADG260320180916MT

STB6NK90ZT4, STP6NK90Z, STP6NK90ZFP, STW7NK90Z

Electrical characteristics curves

Figure 13. Normalized on resistance vs temperature

Figure 15. Normalized V

(BR)DSS

vs temperature

Figure 14. Source-drain diode forward characteristic

Figure 16. Maximum avalanche energy vs temperature

DS2985 - Rev 6

page 7/26

3 Test circuits

AM01468v1

V

D

R

G

R

L

D.U.T.

2200

μF

V

DD

3.3

μF

+

pulse width

V

GS

AM01469v1

47 kΩ

1 kΩ

47 kΩ

2.7 kΩ

1 kΩ

12 V

IG= CONST

100 Ω

100 nF

D.U.T.

+

pulse width

V

GS

2200

μF

V

G

V

DD

AM01470v1

A

D

D.U.T.

S

B

G

25 Ω

A

A

B

B

R

G

G

D

S

100 µH

µF

3.3

1000
µF

V

DD

D.U.T.

+

_

+

fast
diode

AM01471v1

V

D

I

D

D.U.T.

L

V

DD

+

pulse width

V

i

3.3
µF

2200
µF

AM01472v1

V(BR)DSS

VDD

VDD

VD

IDM

ID

AM01473v1

0

V

GS

90%

V

DS

90%

10%

90%

10%

10%

t

on

t

d(on)

t

r

0

t

off

t

d(off)

t

f

STB6NK90ZT4, STP6NK90Z, STP6NK90ZFP, STW7NK90Z

Test circuits

Figure 17. Test circuit for resistive load switching times

Figure 19. Test circuit for inductive load switching and

diode recovery times

Figure 18. Test circuit for gate charge behavior

Figure 20. Unclamped inductive load test circuit

DS2985 - Rev 6

Figure 21. Unclamped inductive waveform

Figure 22. Switching time waveform

page 8/26