STB6NK60Z - STB6NK60Z-1
1
3
1
3
3
3
STP6NK60Z - STP6NK60ZFP
N-CHANNEL 600V - 1Ω - 6A - TO-220/TO-220FP/D²PAK/I²PAK
Zener-Protected SuperMESH™ MOSFET
General features
Type
STB6NK60Z
STB6NK60Z-1
STP6NK60ZFP
STP6NK60Z
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ GATE CHARGE MINIMIZED
V
DSSRDS(on)
600 V
600 V
600 V
600 V
< 1.2 Ω
< 1.2 Ω
< 1.2 Ω
< 1.2 Ω
I
D
6 A
6 A
6 A
6 A
Pw
110
110
30
110
Description
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, spec ial
care is taken to ensure a very good dv/dt
capability for the most demanding applications.
Applications
Package
2
TO-220
1
D²PAK
TO-220FP
1
I²PAK
2
Internal schematic diagram
2
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ IDEAL FOR OFF-LINE POWER SUPPLIES,
ADAPTOR AND PFC
■ LIGHTING
Order codes
Sales Type Marking Package Packaging
STB6NK60Z-1 B6NK60Z-1 I²PAK TUBE
STB6NK60ZT4 B6NK60Z D²PAK TAPE & REEL
STP6NK60ZFP P6NK60ZFP TO-220FP TUBE
STP6NK60Z P6NK60Z TO-220 TUBE
Rev 3
September 2005 1/16
www.st.com
16
1 Electrical ratings STB6NK60Z - STB6NK60Z-1 - STP6NK60Z - STP6NK60ZFP
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol Parameter Value Unit
TO-220/D²/I²PAK TO-220FP
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
Note 1
P
TOT
Drain-Source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20kΩ)
Gate-Source Voltage ± 30 V
Drain Current (continuous) at TC = 25°C
Drain Current (continuous) at TC = 100°C
Drain Current (pulsed) 24 24 (Note 2) A
Total Dissipation at TC = 25°C
Derating Factor 088 0.24 W/°C
V
ESD(G-S)
dv/dt
Note 3
V
ISO
T
T
stg
G-S ESD (HBM C=100pF, R=1.5kΩ) 3500 V
Peak Diode Recovery voltage slope 4.5 V/ns
Insulation Withstand Volatge (DC) - - 2500 V
Operating Junction Temperature
j
Storage Temperature
Table 2. Thermal data
600 V
600 V
66 (Note 2) A
3.8 3.8 (Note 2) A
110 30 W
-55 to 150 °C
TO-220/I²PAK/D²PAK TO-220FP Unit
Rthj-case Thermal Resistance Junction-case Max 1.14 4.2 °C/W
Rthj-amb Thermal Resist ance Junction-amb Max 62.5 °C/W
T
l
Maximum Lead Temperature For Soldering
Purpose
300 °C
Table 3. Avalanche characteristics
Symbol Parameter Max Valu e Unit
I
AR
E
AS
2/16
Avalanche Curren t, repetitive or
Not-Repetitive (pul se width limited by Tj max)
Single Pulse Avalanche Energy
(starting Tj=25°C, I
D=IAR
, VDD= 50V)
6A
210 mJ
STB6NK60Z - STB6NK60Z-1 - STP6NK60Z - STP6NK60ZFP 2 Electrical characteristics
2 Electrical characteristics
(T
= 25 °C unless otherwise specified)
CASE
Table 4. On/Off states
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
GS
= 0)
Gate-body Leakage
Current (V
DS
= 0)
Gate Threshold Voltage
St ati c Drai n-source On
Resistance
= 1 mA, VGS = 0
I
D
V
= Max Rating
DS
= Max Rating, TC = 125
V
DS
°C
= ± 20V
V
GS
= VGS, ID = 100µA
V
DS
V
= 10V, ID = 3 A
GS
600 V
1
50
±10 µA
33.754.5V
11.2Ω
Table 5. Dynamic
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
fs
Note 4
C
iss
C
oss
C
rss
Forward Tr ansconductance
Input Capacitance
Outp u t C a pacita nce
Rev er se Trans fer Capacita n ce
VDS = 8 V, ID=3 A
= 25V, f = 1 MHz,VGS = 0
V
DS
5S
905
115
25
µA
µA
pF
pF
pF
C
oss eq.
Note 5
Q
g
Q
gs
Q
gd
Equivalent Outp ut
Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
= 0V, VDS = 0V to 480V
V
GS
= 480V, ID = 6 A,
V
DD
V
= 10V
GS
(see Figure 16)
56 pF
33
6
46
17
Table 6. Gate-source zener diode
Symbol Parameter T est Conditions Min. Ty p. Max. Unit
BV
GSO
Note 6
Gate-Source
Breakdown Voltage
Igs=±1mA
(Open Drain)
30 V
nC
nC
nC
3/16
2 Electrical characteristics STB6NK60Z - STB6NK60Z-1 - STP6NK60Z - STP6NK60ZFP
Table 7. Switching times
Symbol Parameter Test Conditions Min. Typ. Max. Unit
= 300 V, ID = 3 A
V
t
d(on)
Tur n-on Delay Time
t
r
Rise Time
DD
R
=4.7Ω VGS = 10 V
G
(see Figure 15)
14
14
ns
ns
t
d(off)
t
t
r(Voff)
t
t
Turn-off Delay Time
f
Fall Ti me
Off-vol tage Rise Tim e
f
c
Fall Ti me
Cross-over T ime
= 300 V, ID = 3 A
V
DD
R
=4.7Ω VGS = 10 V
G
(see Figure 15)
= 480V, ID = 6 A,
V
DD
R
=4.7Ω, V
G
GS
(see Figure 15)
= 10V
47
19
16
16
29
Table 8. Source drain diode
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
Note 1
SDM
V
Note 4
SD
t
rr
Q
rr
I
RRM
(1) Pul s e width limited by safe operating area
(2)Limi ted only by maximum temperature allowed
≤6A, di/dt ≤200A/µs, VDD=80% V
(3) I
SD
(4) Pulsed: pulse duration = 300µs, duty cycle 1.5%
(5) C
oss eq.
to 80%
(6) The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability,
but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In
this respect the Zener voltage is approp riate t o achieve an effi cient and cost-effecti ve interv ention to protect the devi ce’s
integrity. These integrated Zener diodes thus avoid the usage of external components
Source-drain Current
Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
(BR)DSS
is defined as a constant equivalent capacitance giving the same charging time as C
ISD = 6 A, VGS = 0
= 6 A, di/dt = 100A /µs
I
SD
V
= 50 V, Tj = 150°C
DD
(see Figure 17)
.
6
24
1.6 V
445
2.7
12
when VDS increases from 0
oss
ns
ns
ns
ns
ns
A
A
ns
µC
A
4/16
STB6NK60Z - STB6NK60Z-1 - STP6NK60Z - STP6NK60ZFP 2 Electrical characteristics
2.1 Elect rical character i st ic s (curves)
Figure 1. Safe Operat in g Are a f or
TO-220/D²/I²PAK
Figure 3. Safe Operating Area for TO-220FP Figure 4. Therm al Impedan ce for TO-220FP
Figure 2. Therm al Impedanc for
TO-220/D²/I²PAK
Figure 5. Output Characteristics Figure 6. Transfer Characteristics
5/16
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