Page 1
General features
Type V
STP60NF06 60V <0.016Ω 60A
■ Exceptional dv/dt capability
■ 100% avalanche tested
■ Application oriented characterization
DSS
R
DS(on)
STP60NF06
N-channel 60V - 0.014Ω - 60A TO-220
STripFET II™ Power MOSFET
I
D
3
2
1
Description
This Power MOSFET series realized with
STMicroelectronics unique STripFET process has
specifically been designed to minimize input
capacitance and gate charge. It is therefore
suitable as primary switch in advanced highefficiency isolated DC-DC converters for Telecom
and Computer application. It is also intended for
any application with low gate charge drive
requirements.
Applications
■ Switching application
Order code
Part number Marking Package Packaging
STP60NF06 P60NF06 TO-220 Tube
TO-220
Internal schematic diagram
March 2007 Rev 6 1/12
www.st.com
12
Page 2
Contents STP60NF06
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2/12
Page 3
STP60NF06 Electrical ratings
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol Parameter Value Unit
I
DM
P
V
V
Drain-source voltage (VGS = 0) 60 V
DS
Gate- source voltage ±20 V
GS
Drain current (continuos) at TC = 25°C 60 A
I
D
I
Drain current (continuos) at TC = 100°C 42 A
D
(1)
Drain current (pulsed) 240 A
Total dissipation at TC = 25°C 110 W
TOT
Derating factor 0.74 W/°C
(2)
dv/dt
T
1. Pulse width limited by safe operating area
2. I
SD
Peak diode recovery voltage slope 7.5 V/ns
Storage temperature
stg
Max. operating junction temperature
T
j
≤ 60A, di/dt ≤ 400 A/µs, V
≤ 48V, Tj ≤ T
DD
jmax
– 55 to 175 °C
Table 2. Thermal data
Symbol Parameter Value Unit
R
thj-case
R
Thermal resistance junction-case max 1.36 °C/W
Thermal resistance junction-ambient max 62.5 °C/W
thj-a
Maximum lead temperature for soldering
T
l
purpose
300 °C
Table 3. Avalanche characteristics
Symbol Parameter Value Unit
I
E
Avalanche current, repetitive or not-repetitive
AR
(pulse width limited by Tj Max)
Single pulse avalanche energy
AS
(starting Tj=25°C, Id=Iar, Vdd=30V)
30 A
370 mJ
3/12
Page 4
Electrical characteristics STP60NF06
2 Electrical characteristics
(T
Table 4. On/off states
=25°C unless otherwise specified)
CASE
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
Table 5. Dynamic
Drain-source
Breakdown voltage
Zero gate voltage
Drain current (V
GS
Gate-body leakage
current (VDS = 0)
= 0)
ID = 250 µA, VGS = 0 60 V
V
= Max rating 1 µA
DS
=Max rating, TC=125°C 10 µA
V
DS
VGS = ±20V ±100 nA
Gate threshold voltage VDS = VGS, ID = 250µA 2 4 V
Static drain-source on
resistance
= 10V, ID = 30A 0.014 0.016 Ω
V
GS
Symbol Parameter Test conditions Min. Typ. Max. Unit
(1)
g
fs
C
C
C
Forward transconductance VDS = 15V, ID=30A 50 S
Input capacitance
iss
Output capacitance 400 pF
oss
Reverse transfer
rss
capacitance
VDS = 25V, f = 1 MHz,
= 0
V
GS
1660 pF
140 pF
Q
Q
Q
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Table 6. Switching times
Total gate charge
g
Gate-source charge 9 nC
gs
Gate-drain charge 23 nC
gd
VDD = 30V, ID = 60A,
= 10V
V
GS
(see Figure 12)
54 73 nC
Symbol Parameter Test conditions Min. Typ. Max. Unit
= 30V, ID = 30A
V
t
d(on)
t
d(off)
Turn-on delay time
t
Rise time
r
Turn-off-delay time
t
Fall time
f
DD
=4.7Ω VGS = 10V
R
G
(see Figure 11)
= 30V, ID = 30A,
V
DD
=4.7Ω, V
R
G
(see Figure 11)
GS
=10V
15
65
45
20
ns
ns
ns
ns
4/12
Page 5
STP60NF06 Electrical characteristics
Table 7. Source drain diode
Symbol Parameter Test conditions Min Typ. Max Unit
I
Source-drain current 60 A
SD
(1)
I
SDM
V
SD
I
RRM
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Source-drain current (pulsed) 240 A
(2)
Forward on voltage ISD = 60A, VGS = 0 1.3 V
t
Reverse recovery time
rr
Q
Reverse recovery charge
rr
Reverse recovery current
ISD = 60A, VDD=30V
di/dt = 100A/µs, Tj = 150°C
(see Figure 13)
70
185
5
ns
nC
A
5/12
Page 6
Electrical characteristics STP60NF06
2.1 Electrical characteristics (curves)
Figure 1. Safe operating area Figure 2. Thermal impedance
Figure 3. Output characteristics Figure 4. Transfer characteristics
Figure 5. Source-drain diode forward
6/12
characteristics
Figure 6. Static drain-source on resistance
Page 7
STP60NF06 Electrical characteristics
Figure 7. Gate charge vs gate-source voltage Figure 8. Capacitance variations
Figure 9. Normalized gate threshold voltage
vs temperature
Figure 10. Normalized on resistance vs
temperature
7/12
Page 8
Test circuit STP60NF06
3 Test circuit
Figure 11. Switching times test circuit for
resistive load
Figure 13. Test circuit for inductive load
switching and diode recovery times
Figure 12. Gate charge test circuit
Figure 14. Unclamped Inductive load test
circuit
Figure 15. Unclamped inductive waveform Figure 16. Switching time waveform
8/12
Page 9
STP60NF06 Package mechanical data
4 Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
9/12
Page 10
Package mechanical data STP60NF06
TO-220 mechanical data
Dim
Min Typ Max Min Typ Max
mm inch
A 4.40 4.60 0.173 0.181
b 0.61 0.88 0.024 0.034
b1 1.14 1.70 0.044 0.066
c0.49 0.70 0.019 0.027
D 15.25 15.75 0.6 0.62
D1 1.27 0.050
E 10 10.40 0.393 0.409
e 2.40 2.70 0.094 0.106
e1 4.95 5.15 0.194 0.202
F1.23 1.32 0.048 0.051
H1 6.20 6.60 0.244 0.256
J1 2.40 2.72 0.094 0.107
L13 14 0.511 0.551
L1 3.50 3.93 0.137 0.154
L20 16.40 0.645
L3028.90 1.137
θP 3.75 3.85 0.147 0.151
Q2.65 2.95 0.104 0.116
10/12
Page 11
STP60NF06 Revision history
5 Revision history
Table 8. Revision history
Date Revision Changes
09-Sep-2004 3 Complete version
17-Aug-2006 4 The document has been reformatted
04-Oct-2006 5 Changes in Dynamic
02-Mar-2007 6 Safe operating area has been updated
11/12
Page 12
STP60NF06
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