ST MICROELECTRONICS STP4NK60Z Datasheet

STP4NK60Z,

1

2

3

TAB

1

2

3

TO-220

TO-220FP

D(2, TAB)

G(1)

S(3)

AM01476v1

STP4NK60ZFP

N-channel 600 V, 1.7 Ω typ., 4 A Zener-protected SuperMESH™

Power MOSFETs in TO-220 and TO-220FP packages

Datasheet - production data

Features

Figure 1. Internal schematic diagram

Order codes V

STP4NK60Z

STP4NK60ZFP

DSRDS(on) max.PTOT

600 V 2  70 W 4 A

I

D

• 100% avalanche tested

• Very low intrinsic capacitances

• Zener-protected

Applications

• Switching applications

Description

These devices are N-channel Zener-protected
Power MOSFETs developed using
STMicroelectronics' SuperMESH™ technology,
achieved through optimization of ST's well
established strip-based PowerMESH™ layout. In
addition to a significant reduction in on­resistance, this device is designed to ensure a
high level of dv/dt capability for the most
demanding applications.

Table 1. Device summary

Order codes Marking Packages Packaging

STP4NK60Z P4NK60Z TO-220

STP4NK60ZFP P4NK60ZFP TO-220FP

January 2014 DocID025020 Rev 2 1/16

This is information on a product in full production.

Tube

www.st.com

Contents STP4NK60Z, STP4 NK60ZFP

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

2/16 DocID025020 Rev 2

STP4NK60Z, STP4NK60ZFP Electrical ratings

1 Electrical ratings

Table 2. Absolute maximum ratings

Value

Symbol Parameter

TO-220 TO-220FP

Unit

I

DM

P

V

V

DS

GS

I

D

I

D

TOT

Drain-source voltage 600 V

Gate- source voltage ± 30 V

Drain current (continuous) at TC = 25 °C 4 4

Drain current (continuous) at TC = 100 °C 2.5 2.5

(2)

Drain current (pulsed) 16 16

Total dissipation at TC = 25 °C 70 25 W

Derating factor 0.56 0.2 W/°C

ESD

dv/dt

V

ISO

T

stg

T

1. Limited by maximum junction temperature.

2. Pulse width limited by safe operating area

3. I

SD

Gate-source human body model (C=100 pF, R=1.5
kΩ)

(3)

Peak diode recovery voltage slope 4.5 V/ns

Insulation withstand voltage (RMS) from all three
leads to external heat sink (t=1 s; T

Storage temperature -55 to 150 °C

Max operating junction temperature 150 °C

j

≤ 4 A, di/dt ≤ 200 A/μs, V

≤ V

DD

(BR)DSS

Table 3. Thermal data

, TJ ≤ T

=25 °C)

C

JMAX.

(1)

(1)

(1)

A

A

A

3kV

2500 V

Value

Symbol Parameter

TO-220 TO-220FP

R

thj-case

R

thj-amb

Thermal resistance junction-case max 1.79 5 °C/W

Thermal resistance junction-ambient max 62.5 °C/W

T able 4. Avalanche characteristics

Symbol Parameter Value Unit

I

AR

E

Avalanche current, repetitive or not-repetitive
(pulse width limited by T

j max

Single pulse avalanche energy

AS

(starting TJ = 25 °C, ID=IAR, VDD= 50 V)

)

4A

120 mJ

DocID025020 Rev 2 3/16

Unit

16

Electrical characteristics STP4NK60Z , STP4NK60ZFP

2 Electrical characteristics

(T

= 25 °C unless otherwise specified)

CASE

T a ble 5. On/off states

Symbol Parameter Test conditions Min. Typ. Max. Unit

V

(BR)DSS

I

DSS

I

GSS

V

GS(th)

R

DS(on)

Drain-source
breakdown voltage

Zero gate voltage
drain current (VGS = 0)

Gate-body leakage
current (VDS = 0)

ID =1 mA 600 V

V

= 600 V

DS

V

= 600 V, TC = 125 °C

DS

150μA

VGS = ± 20 V ± 10 μA

Gate threshold voltage VDS = VGS, ID = 50 μA 3 3.75 4.5 V

Static drain-source on
resistance

= 10 V, ID = 2 A 1.7 2 

V

GS

Table 6. Dynamic

Symbol Parameter Test conditions Min. Typ. Max. Unit

(1)

g

C

oss eq.

fs

C

C

C

Forward transconductance VDS = 15 V, ID = 2 A - 3 S

Input capacitance

iss

Output capacitance - 67 pF

oss

Reverse transfer capacitance - 13 pF

rss

Equivalent output

(2)

capacitance

VDS = 25 V, f = 1 MHz,
V

= 0

GS

V

=0, VDS = 0 to 480 V - 38.5 pF

DS

- 510 pF

μA

t

d(on)

t

d(off)

t

r(Voff)

Q

Q

Q

1. Pulsed: pulse duration=300μs, duty cycle 1.5%

2. C
increases from 0 to 80% V

Turn-on delay time

= 300 V, ID = 2 A,

V

t

Rise time - 9.5 ns

r

Turn-off delay time - 29 ns

t

Fall time - 16.5 ns

f

Off-voltage rise time

t

Fall time - 12 ns

r

t

Cross-over time - 19.5 ns

c

Total gate charge

g

Gate-source charge - 3.8 nC

gs

Gate-drain charge - 9.8 nC

gd

is defined as a constant equivalent capacitance giving the same charging time as C

oss eq.

DSS

.

DD

R

= 4.7 Ω, V

G

(see Figure 17)

VDD = 480 V, ID = 4 A,

= 4.7 Ω, V

R

G

(see Figure 19)

VDD = 480 V, ID = 4 A,
VGS = 10 V

(see Figure 18)

4/16 DocID025020 Rev 2

GS

GS

= 10 V

= 10 V

-12 ns

-12 ns

-18.826 nC

when VDS

oss

STP4NK60Z, STP4NK60ZFP Electrical characteristics

Table 7. Source drain diode

Symbol Parameter Test conditions Min. Typ. Max. Unit

I

I

SDM

V

SD

Q

I

RRM

1. Pulsed: pulse duration = 300 μs, duty cycle 1.5%

2. Pulse width limited by safe operating area

Source-drain current - 4 A

SD

(1)

Source-drain current (pulsed) - 16 A

(2)

Forward on voltage ISD = 4 A, VGS = 0 - 1.6 V

t

Reverse recovery time

rr

Reverse recovery charge - 1700 nC

rr

Reverse recovery current - 8.5 A

I

= 4 A, di/dt = 100 A/μs

SD

VDD = 24 V, Tj = 150 °C

(see Figure 19)

- 400 ns

Table 8. Gate-source Zener diode

Symbol Parameter Test conditions Min Typ. Max. Unit

V

(BR)GSO

Gate-source breakdown voltage IGS = ± 1mA, ID=0 30 - - V

The built-in back-to-back Zener diodes have been specifically designed to enhance not only
the device’s ESD capability, but also to make them capable of safely absorbing any voltage
transients that may occasionally be applied from gate to source. In this respect, the Zener
voltage is appropriate to achieve efficient and cost-effective protection of device integrity.
The integrated Zener diodes thus eliminate the need for external components.

DocID025020 Rev 2 5/16

16

Electrical characteristics STP4NK60Z , STP4NK60ZFP

2.1 Electrical characteristics (curves)

Figure 2. Safe operating area for TO-220 Figure 3. Thermal impedance for TO-220

Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP

Figure 6. Output characteristics Figure 7. Transfer characteristics

6/16 DocID025020 Rev 2

STP4NK60Z, STP4NK60ZFP Electrical characteristics

Figure 10. Gate charge vs gate-source voltage Figure 11. Capacitance variations

Figure 8. Transconductance Figure 9. Static drain-source on-resistance

Figure 12. Normalized gate threshold voltage vs

temperature

DocID025020 Rev 2 7/16

Figure 13. Normalized R

vs temperature

DS(on)

16

Electrical characteristics STP4NK60Z , STP4NK60ZFP

Figure 14. Source-drain diode forward

Figure 16. Avalanche energy vs temperature

characteristic

Figure 15. Normalized VDS vs temperature

8/16 DocID025020 Rev 2

STP4NK60Z, STP4NK60ZFP Test circuits

AM01468v1

VGS

PW

VD

RG

RL

D.U.T.

2200

μF

3.3
μF

V

DD

AM01469v1

VDD

47kΩ

1kΩ

47kΩ

2.7kΩ

1kΩ

12V

V

i=20V=VGMAX

2200
μF

PW

IG=CONST

100Ω

100nF

D.U.T.

V

G

AM01470v1

A

D

D.U.T.

S

B

G

25

Ω

A

A

B

B

R

G

G

FAST
DIODE

D

S

L=100μH

μF

3.3

1000

μF

V

DD

AM01472v1

V(BR)DSS

VDD

VDD

VD

IDM

ID

3 Test circuits

Figure 17. Switching times test circuit for

resistive load

Figure 19. Test circuit for inductive load

switching and diode recovery times

Figure 18. Gate charge test circuit

Figure 20. Unclamped inductive load test circuit

L

VD

2200

μF

3.3

μF

VDD

Figure 21. Unclamped inductive waveform Figure 22. Switching time waveform

ID

Vi

D.U.T.

Pw

AM01471v1

tdon

ton

tr

90%

tdoff

toff

tf

90%

10%

0

10%

VDS

90%

V

GS

10%

0

AM01473v1

DocID025020 Rev 2 9/16

16

Package mechanical data STP4NK60Z, STP4NK60ZFP

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK

specifications, grade definitions and product status are available at: www.st.com.

ECOPACK

®

packages, depending on their level of environmental compliance. ECOPACK®

®

is an ST trademark.

10/16 DocID025020 Rev 2

STP4NK60Z, STP4NK60ZFP Package mechanical data

BW\SH$B5HYB7

Figure 23. TO-220 type A drawing

DocID025020 Rev 2 11/16

16

Package mechanical data STP4NK60Z, STP4NK60ZFP

Table 9. TO-220 type A mechanical data

mm

Dim.

Min. Typ. Max.

A4.40 4.60

b0.61 0.88

b1 1.14 1.70

c0.48 0.70

D 15.25 15.75

D1 1.27

E 10 10.40

e2.40 2.70

e1 4.95 5.15

F1.23 1.32

H1 6.20 6.60

J1 2.40 2.72

L13 14

L1 3.50 3.93

L20 16.40

L30 28.90

∅

P3.75 3.85

Q2.65 2.95

12/16 DocID025020 Rev 2

STP4NK60Z, STP4NK60ZFP Package mechanical data

7012510_Rev_K_B

Figure 24. TO-220FP drawing

DocID025020 Rev 2 13/16

16

Package mechanical data STP4NK60Z, STP4NK60ZFP

Table 10. TO-220FP mechanical data

mm

Dim.

Min. Typ. Max.

A4.4 4.6

B2.5 2.7

D2.5 2.75

E 0.45 0.7

F0.75 1

F1 1.15 1.70

F2 1.15 1.70

G 4.95 5.2

G1 2.4 2.7

H10 10.4

L2 16

L3 28.6 30.6

L4 9.8 10.6

L5 2.9 3.6

L6 15.9 16.4

L7 9 9.3

Dia 3 3.2

14/16 DocID025020 Rev 2

STP4NK60Z, STP4NK60ZFP Revision history

5 Revision history

Table 11. Document revision history

Date Revision Changes

19-Jul-2013 1

22-Jan-2014 2

First release. Part numbers previously included in datasheet
DocID8882

– Modified: figure in cover page
– Minor text changes

DocID025020 Rev 2 15/16

16

STP4NK60Z, STP4NK60ZFP

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16/16 DocID025020 Rev 2