1
3
3
2
1
1
2
3
TAB TAB
TAB
DPAK
TO-220
IPAK
D(2, TAB)
G(1)
S(3)
AM01475V1
STD4N52K3, STP4N52K3, STU4N52K3
Datasheet
N-channel 525 V, 2.1 Ω typ., 2.5 A MDmesh™ K3 Power MOSFETs in
DPAK, TO-220 and IPAK packages
Features
Product status link
STD4N52K3
STP4N52K3
STU4N52K3
Order code
V
DS
STD4N52K3
STP4N52K3 2.5 A TO-220
525 V 2.6 Ω
R
DS(on)
max. I
2.5 A DPAK
D
Package
STU4N52K3 2.5 A IPAK
• 100% avalanche tested
• Extremely high dv/dt capability
• Very low intrinsic capacitance
• Improved diode reverse recovery characteristics
• Zener-protected
Applications
• Switching applications
Description
These MDmesh™ K3 Power MOSFETs are the result of improvements applied to
STMicroelectronics’ MDmesh™ technology, combined with a new optimized vertical
structure. These devices boast an extremely low on-resistance, superior dynamic
performance and high avalanche capability, rendering them suitable for the most
demanding applications.
DS7026 - Rev 3 - August 2018
For further information contact your local STMicroelectronics sales office.
www.st.com
1 Electrical ratings
Symbol Parameter Value Unit
V
DS
V
GS
I
D
I
D
IDM
P
TOT
dv/dt
T
T
stg
1. Pulse width limited by safe operating area.
2. ISD ≤ 2.5 A, di/dt ≤ 400 A/μs, V
Drain-source voltage 525 V
Gate-source voltage ±30 V
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC = 100 °C
(1)
Drain current (pulsed) 10 A
Total dissipation at TC = 25 °C
(2)
Peak diode recovery voltage slope 12 V/ns
Operating junction temperature range
j
Storage temperature range
Table 1. Absolute maximum ratings
DSpeak
≤ V
(BR)DSS
, VDD = 80% V
STD4N52K3, STP4N52K3, STU4N52K3
Electrical ratings
2.5 A
2 A
45 W
-55 to 150 °C
.
(BR)DSS
Symbol
R
thj-case
R
thj-amb
R
thj-pcb
1. When mounted on 1inch² FR-4 board, 2 oz Cu.
Thermal resistance junction-case 2.78 2.78 °C/W
Thermal resistance junction-ambient 62.5 100 °C/W
(1)
Thermal resistance junction-pcb 50 °C/W
Parameter
Table 3. Avalanche characteristics
Symbol
(1)
I
AR
E
AS
Avalanche current, repetitive or not-repetitive 1.3 A
(2)
Single pulse avalanche energy 110 mJ
1. Pulse width limited by Tj max.
2. Starting Tj = 25 °C, ID = IAR, VDD = 50 V.
Parameter Value Unit
Table 2. Thermal data
Value
Unit
DPAK TO-220 IPAK
DS7026 - Rev 3
page 2/27
2 Electrical characteristics
(T
= 25 °C unless otherwise specified)
CASE
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
1. Defined by design, not subject to production test.
Drain-source
breakdown voltage
Zero gate voltage drain
current
Gate body leakage
current
Gate threshold voltage
Static drain-source on
resistance
STD4N52K3, STP4N52K3, STU4N52K3
Table 4. On/off states
ID = 1 mA, VGS = 0 V
VGS = 0 V, VDS = 525 V
VGS = 0 V, VDS = 525 V, TC = 125 °C
VDS = 0 V, VGS = ±20 V
VDS = VGS, ID = 50 µA
VGS = 10 V, ID = 1.25 A
Electrical characteristics
525 V
1 µA
(1)
50 µA
±10 µA
3 3.75 4.5 V
2.1 2.6 Ω
C
1. C
Table 5. Dynamic
Symbol
C
iss
C
oss
C
rss
(1)
oss eq.
R
G
Q
g
Q
gs
Q
gd
is defined as a constant equivalent capacitance giving the same charging time as C
oss eq.
to 420 V.
Parameter Test conditions Min. Typ. Max. Unit
Input capacitance
Output capacitance 28
VDS = 100 V, f = 1 MHz, VGS = 0 V
Reverse transfer
capacitance
Equivalent output
capacitance
VDS = 0 to 420 V, VGS = 0 V
Intrinsic gate resistance f = 1 MHz open drain - 4 - Ω
Total gate charge
Gate-source charge 2
Gate-drain charge 7
VDD = 420 V, ID = 2.5 A, VGS = 0 to 10 V
(see Figure 16. Test circuit for gate charge
behavior)
Table 6. Switching times
Symbol
t
d(on)
t
r
t
d(off)
t
f
Parameter Test conditions Min. Typ. Max. Unit
Turn-on delay time
Rise time 7
Turn-off delay time 21
Fall time 14
VDD = 260 V, ID = 1.25 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 15. Test circuit for resistive load
switching times and Figure 20. Switching
time waveform)
334
-
- pF
5
- 20 - pF
11
-
when VDS increases from 0
oss
- nC
8
-
- ns
DS7026 - Rev 3
page 3/27
STD4N52K3, STP4N52K3, STU4N52K3
Electrical characteristics
Table 7. Source drain diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
SD
I
SDM
VSD
t
rr
Q
rr
I
RRM
t
rr
Q
rr
I
RRM
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%.
Source-drain current
Source-drain current
(1)
(pulsed)
(2)
Forward on voltage
Reverse recovery time
Reverse recovery charge 778 nC
ISD = 2.5 A, VGS = 0 V
ISD = 2.5 A, di/dt = 100 A/µs
VDD = 60 V (see Figure 17. Test circuit for
-
- 1.6 V
173 ns
-
inductive load switching and diode recovery
Reverse recovery current 9 A
Reverse recovery time
Reverse recovery charge 941 nC
times)
ISD = 2.5 A, di/dt = 100 A/µs
VDD = 60 V, Tj = 150 °C (see Figure
196 ns
-
17. Test circuit for inductive load switching
Reverse recovery current 10 A
and diode recovery times)
2.5
10
A
Table 8. Gate-source Zener diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)GSO
Gate-source breakdown
voltage
IGS = ±1 mA, ID = 0 A
30 - - V
The built-in back-to-back Zener diodes are specifically designed to enhance the ESD performance of the device.
The Zener voltage facilitates efficient and cost-effective device integrity protection, thus eliminating the need for
additional external componentry.
DS7026 - Rev 3
page 4/27
2.1 Electrical characteristics curves
I
D
10
1
0.1
0.1
1
100
V
DS
(V)
10
(A)
Ope ration in this are a is
Limited b y ma x R
DS(o n)
10µs
100µs
1ms
10ms
Tj=150 °C
Tc=2 5°C
Sing le pulse
0.0 1
AM08639 v1
I
D
10
1
0.1
0.1
1
100
V
DS
(V)
10
(A)
Ope ration in this are a is
Limited b y ma x R
DS(o n)
10µs
100µs
1ms
10ms
Tj=150 °C
Tc=2 5°C
Sing le pulse
0.0 1
AM08637 v1
I
D
3
2
1
0
0
10
V
DS
(V)
20
(A)
5
15
25
4
5
5V
6V
7V
VGS=10 V
6
AM08640 v1
I
D
1.5
1.0
0.5
0
0
4
V
GS
(V)
8
(A)
2
6
2.0
2.5
3.0
3.5
4.0
4.5
1
3
5
7
9
V
GS
=15 V
AM08641 v1
STD4N52K3, STP4N52K3, STU4N52K3
Electrical characteristics curves
Figure 1. Safe operating area for DPAK/IPAK
Figure 3. Safe operating area for TO-220
Figure 2. Thermal impedance for DPAK/IPAK
Figure 4. Thermal impedance for TO-220
DS7026 - Rev 3
Figure 5. Output characterisics
Figure 6. Transfer characteristics
page 5/27
V
(BR)DSS
-75
T
J
(°C)
(nor m)
-25
75
25
125
0.80
0.85
0.90
0.95
1.00
1.05
1.10
AM08648v1
R
DS(o n)
2.05
1.95
1.85
1.75
0
1.0
I
D
(A)
(
Ω)
0.5
1.5
2.15
2.25
2.35
VGS=10 V
2.0
2.5
AM08643v1
V
GS
6
4
2
0
0
2
Q
g
(nC)
(V)
8
8
4
6
10
VDD=420V
D
=2.5A
10
12
300
200
100
0
350
400
V
DS
12
150
250
50
AM08642v1
I
V
DS
(V)
C
100
10
1
0.1
10
V
DS
(V)
(pF)
1
100
Ciss
Cos s
Crs s
AM00893v1
V
GS (th)
0.8
0.7
0.6
0.5
-75
T
J
(°C)
(nor m)
-25
0.9
75
25
125
1.0
1.1
AM08646v1
ID = 50 μΑ
R
DS(o n)
2.0
1.5
1.0
0.5
-75
T
J
(°C)
(nor m)
-25
75
25
125
0
2.5
AM08647v1
VGS = 10 V
STD4N52K3, STP4N52K3, STU4N52K3
Electrical characteristics curves
Figure 7. Normalized V
(BR)DSS
vs temperature
Figure 9. Gate charge vs gate-source voltage
Figure 8. Static drain-source on-resistance
Figure 10. Capacitance variations
Figure 11. Normalized gate threshold voltage vs
DS7026 - Rev 3
temperature
Figure 12. Normalized on-resistance vs temperature
page 6/27
V
SD
0
1
I
SD
(A)
(V)
0.5
2.5
1.5
2
0.4
0.5
0.6
0.7
0.8
0.9
1.0
TJ=-50 °C
TJ=15 0°C
TJ=25 °C
AM08649v1
E
AS
0
40
T
J
(°C)
(mJ )
20
100
60
80
0
20
40
60
120
140
80
100
120
ID=1.3 A
V DD
=50 V
AM08650v1
STD4N52K3, STP4N52K3, STU4N52K3
Electrical characteristics curves
Figure 13. Source-drain diode forward characteristics
Figure 14. Maximum avalanche energy vs temperature
DS7026 - Rev 3
page 7/27
3 Test circuits
AM01468v1
V
D
R
G
R
L
D.U.T.
2200
μF
V
DD
3.3
μF
+
pulse width
V
GS
AM01469v1
47 kΩ
1 kΩ
47 kΩ
2.7 kΩ
1 kΩ
12 V
IG= CONST
100 Ω
100 nF
D.U.T.
+
pulse width
V
GS
2200
μF
V
G
V
DD
AM01470v1
A
D
D.U.T.
S
B
G
25 Ω
A
A
B
B
R
G
G
D
S
100 µH
µF
3.3
1000
µF
V
DD
D.U.T.
+
_
+
fast
diode
AM01471v1
V
D
I
D
D.U.T.
L
V
DD
+
pulse width
V
i
3.3
µF
2200
µF
AM01472v1
V(BR)DSS
VDD
VDD
VD
IDM
ID
AM01473v1
0
V
GS
90%
V
DS
90%
10%
90%
10%
10%
t
on
t
d(on)
t
r
0
t
off
t
d(off)
t
f
STD4N52K3, STP4N52K3, STU4N52K3
Test circuits
Figure 15. Test circuit for resistive load switching times
Figure 17. Test circuit for inductive load switching and
diode recovery times
Figure 16. Test circuit for gate charge behavior
Figure 18. Unclamped inductive load test circuit
DS7026 - Rev 3
Figure 19. Unclamped inductive waveform
Figure 20. Switching time waveform
page 8/27
4 Package information
STD4N52K3, STP4N52K3, STU4N52K3
Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK
packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions
and product status are available at: www.st.com. ECOPACK® is an ST trademark.
®
DS7026 - Rev 3
page 9/27
0068772_A_25
STD4N52K3, STP4N52K3, STU4N52K3
4.1 DPAK (TO-252) type A package information
Figure 21. DPAK (TO-252) type A package outline
DPAK (TO-252) type A package information
DS7026 - Rev 3
page 10/27
STD4N52K3, STP4N52K3, STU4N52K3
DPAK (TO-252) type A package information
Table 9. DPAK (TO-252) type A mechanical data
Dim.
Min. Typ. Max.
A 2.20 2.40
A1 0.90 1.10
A2 0.03 0.23
b 0.64 0.90
b4 5.20 5.40
c 0.45 0.60
c2 0.48 0.60
D 6.00 6.20
D1 4.95 5.10 5.25
E 6.40 6.60
E1 4.60 4.70 4.80
e 2.159 2.286 2.413
e1 4.445 4.572 4.699
H 9.35 10.10
L 1.00 1.50
(L1) 2.60 2.80 3.00
L2 0.65 0.80 0.95
L4 0.60 1.00
R 0.20
V2 0° 8°
mm
DS7026 - Rev 3
page 11/27
0068772_C_25
STD4N52K3, STP4N52K3, STU4N52K3
4.2 DPAK (TO-252) type C package information
Figure 22. DPAK (TO-252) type C package outline
DPAK (TO-252) type C package information
DS7026 - Rev 3
page 12/27
STD4N52K3, STP4N52K3, STU4N52K3
DPAK (TO-252) type C package information
Table 10. DPAK (TO-252) type C mechanical data
Dim.
Min. Typ. Max.
A 2.20 2.30 2.38
A1 0.90 1.01 1.10
A2 0.00 0.10
b 0.72 0.85
b4 5.13 5.33 5.46
c 0.47 0.60
c2 0.47 0.60
D 6.00 6.10 6.20
D1 5.25
E 6.50 6.60 6.70
E1 4.70
e 2.186 2.286 2.386
H 9.80 10.10 10.40
L 1.40 1.50 1.70
L1 2.90 REF
L2 0.90 1.25
L3 0.51 BSC
L4 0.60 0.80 1.00
L6 1.80 BSC
θ1 5° 7° 9°
θ2 5° 7° 9°
V2 0° 8°
mm
DS7026 - Rev 3
page 13/27
0068772_type-E_rev.25
STD4N52K3, STP4N52K3, STU4N52K3
4.3 DPAK (TO-252) type E package information
Figure 23. DPAK (TO-252) type E package outline
DPAK (TO-252) type E package information
DS7026 - Rev 3
page 14/27
FP_0068772_25
STD4N52K3, STP4N52K3, STU4N52K3
DPAK (TO-252) type E package information
Table 11. DPAK (TO-252) type E mechanical data
Dim.
Min. Typ. Max.
A 2.18 2.39
A2 0.13
b 0.65 0.884
b4 4.95 5.46
c 0.46 0.61
c2 0.46 0.60
D 5.97 6.22
D1 5.21
E 6.35 6.73
E1 4.32
e 2.286
e1 4.572
H 9.94 10.34
L 1.50 1.78
L1 2.74
L2 0.89 1.27
L4 1.02
mm
Figure 24. DPAK (TO-252) recommended footprint (dimensions are in mm)
DS7026 - Rev 3
page 15/27
4.4 DPAK (TO-252) packing information
P1
A0
D1
P0
F
W
E
D
B0
K0
T
User direction of feed
P2
10 pitches cumulative
tolerance on tape +/- 0.2 mm
User direction of feed
R
Bending radius
B1
For machine ref. only
including draft and
radii concentric around B0
AM08852v1
Top cover
tape
Figure 25. DPAK (TO-252) tape outline
STD4N52K3, STP4N52K3, STU4N52K3
DPAK (TO-252) packing information
DS7026 - Rev 3
page 16/27
A
D
B
Full radius
Tape slot
in core for
tape start
2.5mm min.width
G measured
at hub
C
N
40mm min.
access hole
at slot location
T
AM06038v1
STD4N52K3, STP4N52K3, STU4N52K3
Figure 26. DPAK (TO-252) reel outline
DPAK (TO-252) packing information
Table 12. DPAK (TO-252) tape and reel mechanical data
Tape
Dim.
A0 6.8 7 A 330
B0 10.4 10.6 B 1.5
B1 12.1 C 12.8 13.2
D 1.5 1.6 D 20.2
D1 1.5 G 16.4 18.4
E 1.65 1.85 N 50
F 7.4 7.6 T 22.4
K0 2.55 2.75
P0 3.9 4.1 Base qty. 2500
P1 7.9 8.1 Bulk qty. 2500
P2 1.9 2.1
R 40
T 0.25 0.35
W 15.7 16.3
Min. Max. Min. Max.
mm
Dim.
Reel
mm
DS7026 - Rev 3
page 17/27
4.5 TO-220 type A package information
0015988_typeA_Rev_21
Figure 27. TO-220 type A package outline
STD4N52K3, STP4N52K3, STU4N52K3
TO-220 type A package information
DS7026 - Rev 3
page 18/27
STD4N52K3, STP4N52K3, STU4N52K3
TO-220 type A package information
Table 13. TO-220 type A package mechanical data
Dim.
Min. Typ. Max.
A 4.40 4.60
b 0.61 0.88
b1 1.14 1.55
c 0.48 0.70
D 15.25 15.75
D1 1.27
E 10.00 10.40
e 2.40 2.70
e1 4.95 5.15
F 1.23 1.32
H1 6.20 6.60
J1 2.40 2.72
L 13.00 14.00
L1 3.50 3.93
L20 16.40
L30 28.90
øP 3.75 3.85
Q 2.65 2.95
mm
DS7026 - Rev 3
page 19/27
4.6 IPAK (TO-251) type A package information
0068771_IK_typeA_rev14
Figure 28. IPAK (TO-251) type A package outline
STD4N52K3, STP4N52K3, STU4N52K3
IPAK (TO-251) type A package information
DS7026 - Rev 3
page 20/27
STD4N52K3, STP4N52K3, STU4N52K3
IPAK (TO-251) type A package information
Table 14. IPAK (TO-251) type A package mechanical data
Dim.
Min. Typ. Max.
A 2.20 2.40
A1 0.90 1.10
b 0.64 0.90
b2 0.95
b4 5.20 5.40
B5 0.30
c 0.45 0.60
c2 0.48 0.60
D 6.00 6.20
E 6.40 6.60
e 2.28
e1 4.40 4.60
H 16.10
L 9.00 9.40
L1 0.80 1.20
L2 0.80 1.00
V1 10°
mm
DS7026 - Rev 3
page 21/27
4.7 IPAK (TO-251) type C package information
0068771_IK_typeC_rev14
Figure 29. IPAK (TO-251) type C package outline
STD4N52K3, STP4N52K3, STU4N52K3
IPAK (TO-251) type C package information
DS7026 - Rev 3
page 22/27
STD4N52K3, STP4N52K3, STU4N52K3
IPAK (TO-251) type C package information
Table 15. IPAK (TO-251) type C package mechanical data
Dim.
Min. Typ. Max.
A 2.20 2.30 2.35
A1 0.90 1.00 1.10
b 0.66 0.79
b2 0.90
b4 5.23 5.33 5.43
c 0.46 0.59
c2 0.46 0.59
D 6.00 6.10 6.20
D1 5.20 5.37 5.55
E 6.50 6.60 6.70
E1 4.60 4.78 4.95
e 2.20 2.25 2.30
e1 4.40 4.50 4.60
H 16.18 16.48 16.78
L 9.00 9.30 9.60
L1 0.80 1.00 1.20
L2 0.90 1.08 1.25
θ1 3° 5° 7°
θ2 1° 3° 5°
mm
DS7026 - Rev 3
page 23/27
5 Ordering information
Order code Marking Package Packing
STD4N52K3
STP4N52K3 TO-220 Tube
STU4N52K3 IPAK Tube
STD4N52K3, STP4N52K3, STU4N52K3
Ordering information
Table 16. Order codes
DPAK Tape and reel
4N52K3
DS7026 - Rev 3
page 24/27
Revision history
STD4N52K3, STP4N52K3, STU4N52K3
Table 17. Document revision history
Date Version Changes
09-Nov-2010 1 First release
Updated packages order in Table 1: Device summary.
19-Feb-2013 2
20-Aug-2018 3
Updated Table 4: Package mechanical data and Table 5: Packaging
mechanical data.
Minor text changes on the cover page.
The part number STF4N52K3 has been moved to a separate datasheet.
Removed maturity status indication from cover page. The document status is
production data.
Updated title and features in cover page.
Updated Section 1 Electrical ratings, Section 2 Electrical characteristics and
Section 2.1 Electrical characteristics curves.
Added Section 5 Ordering information.
Minor text changes.
DS7026 - Rev 3
page 25/27
STD4N52K3, STP4N52K3, STU4N52K3
Contents
Contents
1 Electrical ratings ..................................................................2
2 Electrical characteristics...........................................................3
2.1 Electrical characteristics curves ..................................................5
3 Test circuits .......................................................................8
4 Package information...............................................................9
4.1 DPAK (TO-252) type A package information ........................................9
4.2 DPAK (TO-252) type C package information .......................................11
4.3 DPAK (TO-252) type E package information .......................................13
4.4 DPAK (TO-252) packing information..............................................15
4.5 TO-220 type A package information ..............................................17
4.6 IPAK (TO-251) type A package information ........................................19
4.7 IPAK (TO-251) type C package information........................................21
5 Ordering information .............................................................24
Revision history .......................................................................25
DS7026 - Rev 3
page 26/27
STD4N52K3, STP4N52K3, STU4N52K3
IMPORTANT NOTICE – PLEASE READ CAREFULLY
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Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2018 STMicroelectronics – All rights reserved
DS7026 - Rev 3
page 27/27
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