STMicroelectronics STP4N150, STW4N150 Technical data

STP4N150

STW4N150

N-channel 1500V - 5Ω - 4A - TO-220/TO-247 Very high PowerMESH™ Power MOSFET

General features

Type	VDSS	RDS(on)	ID
	(@Tjmax)
STP4N150	1500 V	< 7 Ω	4A
STW4N150	1500 V	< 7 Ω	4A

■Avalanche ruggedness

■Gate charge minimized

■Very low intrinsic capacitances

■High speed switching

Description

Using the well consolidated high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of Power MOSFETs with outstanding performances. The strengthened layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, unrivalled gate charge and switching characteristics.

Applications

■ Switching application

3

2

1

TO-220

TO-247

Internal schematic diagram

Order codes

Part number	Marking	Package	Packaging
STP4N150	P4N150	TO-220	Tube
STW4N150	W4N150	TO-247	Tube

August 2006

Rev 4

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www.st.com

Contents	STP4N150 - STW4N150

Contents

1	Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .		. 3
2	Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .		4
	2.1	Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . .	6
3	Test circuit Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . .		9
4	Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .		10
5	Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .		13

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STP4N150 - STW4N150	Electrical ratings

1 Electrical ratings

	Table 1.	Absolute maximum ratings
	Symbol	Parameter	Value	Unit
	VDS	Drain-source voltage (VGS = 0)	1500	V
	VDGR	Drain-gate voltage (RGS = 20 kΩ)	1500	V
	VGS	Gatesource voltage	± 30	V
	ID	Drain current (continuous) at TC = 25°C	4	A
	ID	Drain current (continuous) at TC = 100°C	2.5	A
	IDM (1)	Drain current (pulsed)	12	A
	PTOT	Total dissipation at TC = 25°C	160	W
		Derating factor	1	W/°C
	Tj	Operating junction temperature	-55 to 150	°C
	Tstg	Storage temperature
	1. Pulse width limited by safe operating area

Table 2.	Thermal data
Symbol	Parameter		Value		Unit
		TO-220		TO-247
Rthj-case	Thermal resistance junction-case max		0.78		°C/W
Rthj-amb	Thermal resistance junction-ambient max	62.5		50	°C/W

	Table 3.	Avalanche characteristics
	Symbol	Parameter	Value	Unit
	IAR	Avalanche current, repetitive or not-repetitive	4	A
		(pulse width limited by Tj max)
	EAS	Single pulse avalanche energy	350	mJ
		(starting Tj = 25 °C, ID = IAR, VDD = 50 V)

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Electrical characteristics	STP4N150 - STW4N150

2 Electrical characteristics

(TCASE=25°C unless otherwise specified)
Table 4.	On/off states
Symbol	Parameter	Test conditions	Min.	Typ.	Max.	Unit
V(BR)DSS	Drain-source	ID = 1 mA, VGS = 0	1500			V
	Breakdown voltage
IDSS	Zero gate voltage	VDS = Max Rating			10	µA
	Drain current (VGS = 0)	VDS = Max Rating, TC = 125°C			500	µA
IGSS	Gate-body leakage	VGS = ± 30 V			± 100	µA
	current (VDS = 0)
VGS(th)	Gate threshold voltage	VDS = VGS, ID = 250 µA	3	4	5	V
RDS(on	Static drain-source on	VGS = 10 V, ID = 2 A		5	7	Ω
	resistance

Table 5.	Dynamic
Symbol	Parameter	Test conditions	Min.	Typ.	Max.	Unit
g (1)	Forward transconductance	VDS = 30 V , ID = 2 A		3.5		S
fs
Ciss	Input capacitance	VDS = 25 V, f = 1 MHz,		1300		pF
Coss	Output capacitance			120		pF
	Reverse transfer	VGS = 0
Crss				12		pF
	capacitance
Td(on)	Turn-on delay time	VDD = 750 V, ID = 2 A,		35		ns
Tr	Rise time			30		ns
		RG = 4.7 Ω, VGS = 10 V
td(off)	Turn-off delay time			45		ns
		(see Figure 18)
tf	Fall time			45		ns
Qg	Total gate charge	VDD = 600 V, ID = 4 A,		30	50	nC
Qgs	Gate-source charge	VGS = 10 V		10		nC
Qgd	Gate-drain charge	(see Figure 19)		9		nC

1. Pulsed: pulse duration=300µs, duty cycle 1.5%

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STP4N150 - STW4N150				Electrical characteristics
	Table 6.	Source drain diode
	Symbol	Parameter	Test conditions	Min.	Typ.	Max.	Unit
	ISD	Source-drain current				4	A
	(1)	Source-drain current (pulsed)				12	A
	ISDM
	(2)	Forward on voltage	ISD = 4 A, VGS = 0			2	V
	VSD
	trr	Reverse recovery time	ISD = 4 A, di/dt = 100		510		ns
			A/µs
	Qrr	Reverse recovery charge	VDD = 45V		3		µC
	IRRM	Reverse recovery current			12		A
			(see Figure 18)
	trr	Reverse recovery time	ISD = 4 A, di/dt = 100		615		ns
			A/µs
	Qrr	Reverse recovery charge	VDD = 45V, Tj = 150°C		4		µC
	IRRM	Reverse recovery current			12.6		A
			(see Figure 18)

1.Pulse width limited by safe operating area

2.Pulsed: pulse duration=300µs, duty cycle 1.5%

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