STMicroelectronics STP4N150, STW4N150 Technical data

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N-channel 1500V - 5Ω - 4A - TO-220/TO-247

General features

Type

STP4N150 1500 V < 7 Ω 4A

STW4N150 1500 V < 7 Ω 4A

■ Avalanche ruggedness

■ Gate charge minimized

■ Very low intrinsic capacitances

■ High speed switching

DSS

(@Tjmax)

Description

DS(on)

STP4N150

STW4N150

Very high PowerMESH™ Power MOSFET

TO-220

TO-247

Using the well consolidated high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of Power MOSFETs with outstanding performances. The strengthened layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, unrivalled gate charge and switching characteristics.

Applications

■ Switching application

Order codes

Part number Marking Package Packaging

STP4N150 P4N150 TO-220 Tube

STW4N150 W4N150 TO-247 Tube

Internal schematic diagram

August 2006 Rev 4 1/14

www.st.com

Contents STP4N150 - STW4N150

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

3 Test circuit Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . 9

4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

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STP4N150 - STW4N150 Electrical ratings

1 Electrical ratings

Table 1. Absolute maximum ratings

Symbol Parameter Value Unit

Drain-source voltage (VGS = 0)

Drain-gate voltage (RGS = 20 kΩ)

Gate- source voltage ± 30 V

Drain current (continuous) at TC = 25°C

Drain current (continuous) at TC = 100°C

(1)

Drain current (pulsed) 12 A

Total dissipation at TC = 25°C

1500 V

2.5 A

160 W

Derating factor 1 W/°C

DGR

TOT

1. Pulse width limited by safe operating area

Operating junction temperature

Storage temperature

stg

-55 to 150 °C

Table 2. Thermal data

Symbol Parameter Value Unit

TO-220 TO-247

Rthj-case Thermal resistance junction-case max 0.78 °C/W

Rthj-amb Thermal resistance junction-ambient max 62.5 50 °C/W

Table 3. Avalanche characteristics

Symbol Parameter Value Unit

Avalanche current, repetitive or not-repetitive (pulse width limited by T

max)

Single pulse avalanche energy

(starting T

= 25 °C, ID = IAR, VDD = 50 V)

350 mJ

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Electrical characteristics STP4N150 - STW4N150

2 Electrical characteristics

=25°C unless otherwise specified)

CASE

Table 4. On/off states

Symbol Parameter Test conditions Min. Typ. Max. Unit

(BR)DSS

DSS

GSS

GS(th)

DS(on

Drain-source Breakdown voltage

Zero gate voltage Drain current (V

= 0)

Gate-body leakage current (V

= 0)

Gate threshold voltage

Static drain-source on resistance

= 1 mA, VGS = 0

= Max Rating

= Max Rating, TC = 125°C

VGS = ± 30 V

= VGS, ID = 250 µA

VGS = 10 V, ID = 2 A

1500 V

500µAµA

± 100 µA

345V

57Ω

Table 5. Dynamic

Symbol Parameter Test conditions Min. Typ. Max. Unit

(1)

Forward transconductance

Input capacitance

iss

Output capacitance

oss

Reverse transfer

rss

capacitance

= 30 V , ID = 2 A

= 25 V, f = 1 MHz,

= 0

3.5 S

1300

120

pF pF pF

d(on)

d(off)

1. Pulsed: pulse duration=300µs, duty cycle 1.5%

Turn-on delay time

Rise time

Turn-off delay time Fall time

Total gate charge Gate-source charge

Gate-drain charge

(see Figure 18)

(see Figure 19)

4/14

= 750 V, ID = 2 A,

= 4.7 Ω, V

= 600 V, ID = 4 A,

= 10 V

35 30 45 45

30 10

ns ns ns ns

50 nC

nC nC

STP4N150 - STW4N150 Electrical characteristics

Table 6. Source drain diode

Symbol Parameter Test conditions Min. Typ. Max. Unit

SDM

RRM

1. Pulse width limited by safe operating area

2. Pulsed: pulse duration=300µs, duty cycle 1.5%

Source-drain current

(1)

Source-drain current (pulsed)

(2)

Forward on voltage

Reverse recovery time

Reverse recovery charge

Reverse recovery current

Reverse recovery time

Reverse recovery charge

Reverse recovery current

= 4 A, VGS = 0

= 4 A, di/dt = 100

A/µs

= 45V

(see Figure 18)

= 4 A, di/dt = 100

A/µs

= 45V, Tj = 150°C

(see Figure 18)

510

615

12.6

ns µC A

5/14

Electrical characteristics STP4N150 - STW4N150

2.1 Electrical characteristics (curves)

Figure 1. Safe operating area for TO-220 Figure 2. Thermal impedance for TO-220

Figure 3. Safe operating area for TO-247 Figure 4. Thermal impedance for TO-247

Figure 5. Output characterisics Figure 6. Transfer characteristics

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STP4N150 - STW4N150 Electrical characteristics

Figure 7. Transconductance Figure 8. Static drain-source on resistance

Figure 9. Gate charge vs gate-source voltage Figure 10. Capacitance variations

Figure 11. Normalized gate threshold voltage

vs temperature

Figure 12. Normalized on resistance vs

temperature

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Electrical characteristics STP4N150 - STW4N150

Figure 13. Source-drain diode forward

characteristics

Figure 15. Maximum avalanche energy vs

temperature

Figure 14. Normalized B

vs temperature

VDSS

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STP4N150 - STW4N150 Test circuit Package mechanical data

3 Test circuit Package mechanical data

Figure 16. Unclamped inductive load test

circuit

Figure 18. Switching times test circuit for

resistive load

Figure 17. Unclamped inductive waveform

Figure 19. Gate charge test circuit

Figure 20. Test circuit for inductive load

switching and diode recovery times

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Package mechanical data STP4N150 - STW4N150

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com

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STP4N150 - STW4N150 Package mechanical data

DIM.

mm. inch

MIN. TYP MAX. MIN. TYP. MAX.

A 4.40 4.60 0.173 0.181

b 0.61 0.88 0.024 0.034

b1 1.15 1.70 0.045 0.066

c 0.49 0.70 0.019 0.027

D 15.25 15 .75 0.60 0.620

E 10 10.40 0.393 0.409

e 2.40 2.70 0.094 0.106

e1 4.95 5.15 0.194 0.202

F 1.23 1.32 0.048 0 .052

H1 6.20 6 .60 0.244 0.256

J1 2.40 2.72 0. 094 0 .107

L 13 14 0.511 0 .551

L1 3.50 3.93 0.137 0.154

L20 16.40 0.645

L30 28.90 1.137

øP 3.75 3 .85 0.147 0.151

Q 2 .65 2.95 0.104 0.116

TO-220 MECHANICAL DATA

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Package mechanical data STP4N150 - STW4N150

TO-247 MECHANICAL DATA

DIM.

A 4.85 5.15 0.19 0.20

A1 2.20 2.60 0.08 6 0.102

b 1.0 1.40 0.03 9 0.055

b1 2.0 2.40 0.079 0.0 94

b2 3.0 3.40 0.118 0.1 34

c 0.40 0 .80 0.015 0.03

D 19.85 20.15 0.781 0.793

E 15.45 15.75 0.608 0.620

e5.45 0.214

L 14.20 14.80 0.560 0.582

L1 3.70 4.30 0.14 0.17

L2 18 .50 0.728

øP 3.55 3.65 0.140 0.143

øR 4.50 5.50 0.177 0.216

S5.50 0.216

MIN. TYP MAX. MIN. TYP. MAX.

mm. inch

12/14

STP4N150 - STW4N150 Revision history

5 Revision history

Table 7. Revision history

Date Revision Changes

29-Mar-2005 1 First release

07-Jul-2005 2 Removed TO-220FP

07-Oct-2005 3 Complete version

10-Aug-2006 4 New template, no content change

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STP4N150 - STW4N150

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STMicroelectronics STP4N150, STW4N150 Technical data

Specifications and Main Features

Frequently Asked Questions

User Manual

1 Electrical ratings

Table 1. Absolute maximum ratings

Table 2. Thermal data

Table 3. Avalanche characteristics

2 Electrical characteristics

Table 4. On/off states

Table 5. Dynamic

Table 6. Source drain diode

2.1 Electrical characteristics (curves)

3 Test circuit Package mechanical data

Figure 17. Unclamped inductive waveform

Figure 19. Gate charge test circuit

4 Package mechanical data

5 Revision history

Table 7. Revision history