ST MICROELECTRONICS STP45NF06 Datasheet

N-channel 60 V, 0.22 Ω typ., 38 A, STripFET™ II

TO-220

, TAB

Features

Order code V

STP45NF06 60 V 0.028 Ω 38 A

DS

R

DS(on)

STP45NF06

Power MOSFET in a TO-220 package

Datasheet − production data

I

D

TAB

■ Typical R

■ Exceptional dv/dt capability

■ 100% avalanche tested

■ Standard threshold drive

DS(on)

= 0.022 Ω

Applications

■ Switching application

Description

This Power MOSFET has been developed using
STMicroelectronics’ unique STripFET process,
which is specifically designed to minimize input
capacitance and gate charge. This renders the
device suitable for use as primary switch in
advanced high-efficiency isolated DC-DC
converters for telecom and computer applications,
and applications with low gate charge driving
requirements.

3

2

1

Figure 1. Internal schematic diagram

, TAB

Table 1. Device summary

Order code Marking Package Packaging

STP45NF06 45NF06 TO-220 Tube

December 2012 Doc ID 7433 Rev 6 1/13

This is information on a product in full production.

www.st.com

13

Contents STP45NF06

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

2/13 Doc ID 7433 Rev 6

STP45NF06 Electrical ratings

1 Electrical ratings

Table 2. Absolute maximum ratings

Symbol Parameter Value Unit

Drain-source voltage 60 V

DS

Drain-gate voltage (RGS=20 kΩ)60V

DGR

Gate-source voltage ± 20 V

GS

I

Drain current (continuous) at TC = 25 °C 38 A

D

I

Drain current (continuous) at TC = 100 °C 26 A

D

(1)

Drain current (pulsed) 152 A

Total dissipation at TC = 25 °C 80 W

TOT

V

I

DM

P

V

V

Derating factor 0.53 W/°C

(2)

dv/dt

T

1. Pulse width limited by safe operating area

2. ISD ≤ 38 A, di/dt ≤ 300 A/µs; V

Table 3. Thermal data

Peak diode recovery voltage slope 7 V/ns

Storage temperature - 65 to 175 °C

stg

T

Max. operating junction temperature 175 °C

j

DS(peak)

< V

(BR)DSS , VDD

=80 % V

(BR)DSS

Symbol Parameter Value Unit

R

thj-case

R

thj-amb

1. When mounted on 1 inch² FR-4, 2 Oz copper board.

Thermal resistance junction-case max 1.88 °C/W

(1)

Thermal resistance junction-ambient max 35 °C/W

Table 4. Avalanche characteristics

Symbol Parameter Value Unit

I

E

Avalanche current, repetetive or not repetetive

AR

(pulse width limited by T

Single pulse avalanche energy (starting

AS

= 25 °C, ID= IAR; VDD=50 V)

T

J

jmax

)

38 A

135 mJ

Doc ID 7433 Rev 6 3/13

Electrical characteristics STP45NF06

2 Electrical characteristics

(TC = 25 °C unless otherwise specified).

Table 5. On /off states

Symbol Parameter Test conditions Min. Typ. Max. Unit

V

(BR)DSS

I

DSS

I

GSS

V

GS(th)

R

DS(on)

Drain-source
breakdown voltage

Zero gate voltage
drain current (VGS = 0)

Gate-body leakage
current (VDS = 0)

ID = 250 mA, VGS = 0 60 V

V

= 60 V

DS

V

= 60 V, TC=125 °C

DS

1

10µAµA

VGS = ± 20 V ± 100 nA

Gate threshold voltage VDS = VGS, ID = 250 µA 2 3 4 V

Static drain-source on­resistance

V

= 10 V, ID = 19 A 0.022 0.028 Ω

GS

Table 6. Dynamic

Symbol Parameter Test conditions Min. Typ. Max. Unit

Forward

(1)

g

fs

C

C

C

Q
Q
Q

1. Pulsed: pulse duration = 300 µs, duty cycle 1.5%

trasconductance

Input capacitance

iss

Output capacitance

oss

Reverse transfer

rss

capacitance

Total gate charge

g

Gate-source charge

gs

Gate-drain charge

gs

V

DS>ID(on)*RDS(on)max

= 25 V, f = 1 MHz,

V

DS

VGS = 0

VDD = 48 V, ID = 38 A,
V

= 10 V

GS

, ID=19 A - 24 S

1730

-

215

63

43

-

9

58 ns

15

pF
pF
pF

ns
ns

Table 7. Switching times

Symbol Parameter Test conditions Min. Typ. Max. Unit

t

d(on)

t

d(off)

t

d(off)

4/13 Doc ID 7433 Rev 6

Turn-on delay time
Voltage rise time

t

r

Turn-off delay time
Fall time

t

f

Off-voltage rise time
Fall time

t

f

Cross-over time

t

c

V

= 30 V, ID = 19 A,

DD

R

= 4.7 Ω, V

G

(see Figure 14)

V

= 48 V, ID = 38 A,

clamp

R

= 4.7 Ω, V

G

(see Figure 16)

GS

GS

= 10 V

= 10 V

-

-

20

100

50
20

45

-

42
60

ns

­ns

ns

­ns

ns

-

ns
ns

STP45NF06 Electrical characteristics

Table 8. Source drain diode

Symbol Parameter Test conditions Min. Typ. Max. Unit

I

I

SDM

V

SD

Q

I

RRM

1. Pulsed: pulse duration = 300 µs, duty cycle 1.5%

2. Pulse width limited by safe operating area.

Source-drain current

SD

(1)

Source-drain current (pulsed)

(2)

Forward on voltage ISD = 38 A, VGS = 0 - 1.5 V

t

Reverse recovery time

rr

Reverse recovery charge

rr

Reverse recovery current

ISD = 38 A, di/dt = 100 A/µs
VDD = 100 V, Tj = 150 °C
(see Figure 16)

-

95

-

260

5.5

38

152AA

ns
µC

A

Doc ID 7433 Rev 6 5/13

Electrical characteristics STP45NF06

175175

2.1 Electrical characteristics (curves)

Figure 2. Safe operating area Figure 3. Thermal impedance

Figure 4. Output characteristics Figure 5. Transfer characteristics

Figure 6. Transconductance Figure 7. Static drain-source on-resistance

6/13 Doc ID 7433 Rev 6

STP45NF06 Electrical characteristics

Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations

Figure 10. Normalized gate threshold voltage

vs temperature

Figure 12. Source-drain diode forward

characteristics

Figure 11. Normalized on-resistance vs

temperature

Figure 13. Normalized B

vs temperature

VDSS

Doc ID 7433 Rev 6 7/13

Test circuits STP45NF06

AM01468v1

VGS

PW

VD

RG

RL

D.U.T.

2200

μF

3.3
μF

V

DD

AM01469v1

VDD

47kΩ

1kΩ

47kΩ

2.7kΩ

1kΩ

12V

V

i=20V=VGMAX

2200
μF

PW

IG=CONST

100Ω

100nF

D.U.T.

V

G

AM01470v1

A

D

D.U. T.

S

B

G

25

Ω

A

A

B

B

R

G

G

FAST
DIODE

D

S

L=100μH

μF

3.3

1000

μF

V

DD

AM01472v1

V(BR)DSS

VDD

VDD

VD

IDM

ID

3 Test circuits

Figure 14. Switching times test circuit for

resistive load

Figure 16. Test circuit for inductive load

switching and diode recovery times

Figure 15. Gate charge test circuit

Figure 17. Unclamped inductive load test

circuit

L

VD

2200

μF

3.3
μF

VDD

ID

Vi

D.U. T.

Pw

Figure 18. Unclamped inductive waveform Figure 19. Switching time waveform

Id

90%Vds

t

d

(v)

Vgs

90%Vgs

on

on

))

Vgs(I(t))

10%Vds

8/13 Doc ID 7433 Rev 6

Vds

r

(v)

t

AM01471v1

Inductive Load Turn

f

(i)

t

t

c

(off)

-off

90%Id

10%Id

AM05540v1

STP45NF06 Package mechanical data

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK

®

packages, depending on their level of environmental compliance. ECOPACK®

®

is an ST trademark.

Doc ID 7433 Rev 6 9/13

Package mechanical data STP45NF06

Table 9. TO-220 type A mechanical data

mm

Dim.

Min. Typ. Max.

A4.40 4.60

b0.61 0.88

b1 1.14 1.70

c0.48 0.70

D 15.25 15.75

D1 1.27

E 10 10.40

e2.40 2.70

e1 4.95 5.15

F1.23 1.32

H1 6.20 6.60

J1 2.40 2.72

L13 14

L1 3.50 3.93

L20 16.40

L30 28.90

∅P3.75 3.85

Q2.65 2.95

10/13 Doc ID 7433 Rev 6

STP45NF06 Package mechanical data

0015988_typeA_Rev_S

Figure 20. TO-220 type A drawing

Doc ID 7433 Rev 6 11/13

Revision history STP45NF06

5 Revision history

Table 10. Revision history

Date Revision Changes

09-Sep-2004 1 Preliminary version.

04-Feb-2005 2 Complete version.

17-Aug-2006 3 New template. No content change.

13-Nov-2006 4 Inserted new value.

05-Jul-2010 5 Updated Section 2.1: Electrical characteristics (curves).

19-Dec-2012 6

Updated: Section 4: Package mechanical data

12/13 Doc ID 7433 Rev 6

STP45NF06

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Doc ID 7433 Rev 6 13/13