N-channel 650 V, 0.070 Ω, 33 A MDmesh™ V Power MOSFET
3
Features
Type
STB42N65M5
STF42N65M5
STI42N65M5
STP42N65M5
STW42N65M5
V
DSS
T
Jmax
710 V
710 V
710 V
710 V
710 V
@
STx42N65M5
2
in I
PAK, TO-220, TO-220FP, D2PAK and TO-247
R
DS(on)
max
< 0.079 Ω
< 0.079 Ω
< 0.079 Ω
< 0.079 Ω
< 0.079 Ω
I
33 A
33 A
33 A
33 A
33 A
D
3
1
D²PAK
(1)
TO-220FP
2
1
TO-220
3
2
1
1. Limited only by maximum temperature allowed
■ TO-220 worldwide best R
■
Higher V
■ High dv/dt capability
■ Excellent switching performance
■ Easy to drive
■ 100% avalanche tested
DSS
rating
DS(on)
Application
■ Switching applications
Description
MDmesh™ V is a revolutionary Power MOSFET
technology based on an innovative proprietary
vertical process, which is combined with
STMicroelectronics’ well-known PowerMESH™
horizontal layout structure. The resulting product
has extremely low on-resistance, which is
unmatched among silicon-based Power
MOSFETs, making it especially suitable for
applications which require superior power density
and outstanding efficiencies.
Table 1. Device summary
3
2
I²PAK
1
TO-247
1
Figure 1. Internal schematic diagram
$
'
3
3
2
!-V
Order codes Marking Package Packaging
STB42N65M5
STF42N65M5
STI42N65M5
STP42N65M5
STW42N65M5
42N65M5
42N65M5
42N65M5
42N65M5
42N65M5
D²PAK
TO-220FP
I²PAK
TO-220
TO-247
Tape and reel
Tu b e
Tu b e
Tu b e
Tu b e
June 2009 Doc ID 15317 Rev 3 1/18
www.st.com
18
Contents STx42N65M5
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
2/18 Doc ID 15317 Rev 3
STx42N65M5 Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum ratings
Value
Symbol Parameter
V
I
DM
P
I
E
dv/dt
Gate- source voltage ± 25 V
GS
Drain current (continuous) at TC = 25 °C 33 33
I
D
Drain current (continuous) at TC = 100 °C 20.8 20.8
I
D
(2)
Drain current (pulsed) 132 132
Total dissipation at TC = 25 °C 190 40 W
TOT
Max current during repetitive or single pulse
AR
avalanche (pulse width limited by T
Single pulse avalanche energy
AS
(starting T
(3)
Peak diode recovery voltage slope 15 V/ns
= 25°C, ID = IAR, VDD = 50V)
j
Insulation withstand voltage (RMS) from all
V
T
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. ISD ≤ 33 A, di/dt ≤ 400 A/µs, V
three leads to external heat sink
ISO
(t = 1 s; T
Storage temperature -55 to 150 °C
stg
Max. operating junction temperature 150 °C
T
j
C = 25 °C)
Peak
< V
(BR)DSS
JMAX
(1)
(1)
Unit
A
A
A
TO-220, TO-247
D²PAK, I²PAK
)
TO-220FP
(1)
11 A
950 mJ
-- 2500 V
Table 3. Thermal data
Value
Symbol Parameter
Unit
D²PAK I²PAK TO-220 TO-247 TO-220FP
R
thj-case
R
thj-amb
R
thj-pcb
Thermal resistance junctioncase max
Thermal resistance junctionambient max
Thermal resistance junction-pcb
max
Maximum lead temperature for
T
l
soldering purpose
0.66 3.1 °C/W
-- 62.5 50 62.5 °C/W
30 -- -- -- -- °C/W
300 °C
Doc ID 15317 Rev 3 3/18
Electrical characteristics STx42N65M5
2 Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 4. On /off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on
Drain-source
breakdown voltage
Zero gate voltage
drain current (V
GS
Gate-body leakage
current (V
DS
= 0)
= 0)
= 1 mA, VGS = 0 650 V
I
D
V
= Max rating
DS
= Max rating, TC=125 °C
V
DS
1
100µAµA
VGS = ± 25 V 100 nA
Gate threshold voltage VDS = VGS, ID = 250 µA 3 4 5 V
Static drain-source on
resistance
V
= 10 V, ID = 16.5 A 0.070 0.079 Ω
GS
Table 5. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
C
C
1. C
2. C
C
C
C
o(er)
o(tr)
R
Q
Q
Q
o(er)
to 80% V
o(tr)
to 80% V
Input capacitance
iss
Output capacitance
oss
Reverse transfer
rss
capacitance
Equivalent output
(1)
capacitance energy
related
Equivalent output
(2)
capacitance time
related
Intrinsic gate
G
resistance
Total gate charge
g
Gate-source charge
gs
Gate-drain charge
gd
is a constant capacitance value that gives the same stored energy as C
DSS
is a constant capacitance value that gives the same charging time as C
DSS
= 100 V, f = 1 MHz,
V
DS
= 0
V
GS
= 0, VDS = 0 to 80%
V
GS
V
(BR)DSS
= 0, VDS = 0 to 80%
V
GS
V
(BR)DSS
f = 1 MHz open drain - 1.1 - Ω
VDD = 520 V, ID = 16.5 A,
= 10 V
V
GS
(see Figure 20)
oss
oss
4650
-
110
-
3.2
-100-pF
-285-pF
100
-
26
-
38
while VDS is rising from 0
while VDS is rising from 0
pF
pF
pF
nC
nC
nC
4/18 Doc ID 15317 Rev 3
STx42N65M5 Electrical characteristics
Table 6. Switching times
Symbol Parameter Test conditions Min. Typ. Max Unit
t
d(on)
t
d(off)
Turn-on delay time
t
Rise time
r
Turn-off-delay time
t
Fall time
f
= 400 V, ID = 20 A,
V
DD
= 4.7 Ω, V
R
G
(see Figure 19)
GS
= 10 V
61
24
65
-
13
Table 7. Source drain diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
I
SDM
V
SD
Q
I
RRM
Q
I
RRM
1. Pulse width limited by safe operating area
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Source-drain current
SD
(1)
Source-drain current (pulsed)
(2)
Forward on voltage ISD = 33 A, VGS = 0 - 1.5 V
t
Reverse recovery time
rr
Reverse recovery charge
rr
Reverse recovery current
Reverse recovery time
t
rr
Reverse recovery charge
rr
Reverse recovery current
ISD = 33 A, di/dt = 100 A/µs
= 100 V (see Figure 24)
V
DD
= 33 A, di/dt = 100 A/µs
I
SD
= 100 V, Tj = 150 °C
V
DD
(see Figure 24)
-
-
-
33
132AA
400
7
35
532
10
38
ns
ns
ns
ns
ns
µC
A
ns
µC
A
Doc ID 15317 Rev 3 5/18
Electrical characteristics STx42N65M5
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area for TO-220,
I
D²PAK, I²PAK
D
AM01565v1
Figure 3. Thermal impedance for TO-220,
D²PAK, I²PAK
(A)
100
10
DS(on)
10µs
100µs
Operation in this area is
1
Limited by max R
1ms
10ms
0.1
0.1
Figure 4. Safe operating area for TO-247 Figure 5. Thermal impedance for TO-247
I
D
1
10
100
V
DS
(V)
AM03246v1
(A)
100
10µs
100µs
1ms
10ms
10
1
Operation in this area is
Limited by max R
DS(on)
0.1
0.1
Figure 6. Safe operating area for TO-220FP Figure 7. Thermal impedance for TO-220FP
I
D
1
10
100
V
DS
(V)
AM01566v1
(A)
100
10
Operation in this area is
Limited by max R
1
DS(on)
10µs
100µs
1ms
10ms
0.1
0.01
0.1
1
10
100
DS
(V)
V
6/18 Doc ID 15317 Rev 3
Loading...