ST MICROELECTRONICS STP2NK100Z Datasheet

1

2

3

TAB

TO-220

IPAK

TAB

1

2

3

TAB

1

3

2

DPAK

D(2, TAB)

G(1)

S(3)

AM01475V1

STD2NK100Z, STP2NK100Z, STU2NK100Z

Datasheet

N-channel 1000 V, 6.25 Ω typ., 1.85 A SuperMESH™ Power MOSFETs in

DPAK, TO-220 and IPAK packages

Features

Product status link

STD2NK100Z

STP2NK100Z

STU2NK100Z

Order code

V

DS

STD2NK100Z

STP2NK100Z TO-220

1000 V 8.5 Ω 1.85 A

R

max. I

DS(on)

D

Package

DPAK

STU2NK100Z IPAK

• Extremely high dv/dt capability

• 100% avalanche tested

• Gate charge minimized

• Very low intrinsic capacitance

• Zener-protected

Applications

• Switching applications

Description

These high-voltage devices are Zener-protected N-channel Power MOSFETs
developed using the SuperMESH™ technology by STMicroelectronics, an
optimization of the well-established PowerMESH™. In addition to a significant
reduction in on-resistance, these devices are designed to ensure a high level of dv/dt
capability for the most demanding applications.

DS5280 - Rev 3 - June 2018
For further information contact your local STMicroelectronics sales office.

www.st.com

1 Electrical ratings

Symbol Parameter Value Unit

V

DS

V

GS

I

D

I

D

IDM

P

TOT

ESD Gate-source human body model (C = 100 pF, R =1.5 kΩ) 3 kV

dv/dt

T

T

stg

1. Pulse width limited by safe operating area.

2. ISD ≤ 1.85 A, di/dt ≤ 200 A/µs, VDD = 80% V

Drain-source voltage 1000 V

Gate-source voltage ±30 V

Drain current (continuous) at TC = 25 °C

Drain current (continuous) at TC = 100 °C

(1)

Drain current (pulsed) 7.4 A

Total dissipation at TC = 25 °C

(2)

Peak diode recovery voltage slope 2.5 V/ns

Operating junction temperature range

j

Storage temperature range

STD2NK100Z, STP2NK100Z, STU2NK100Z

Table 1. Absolute maximum ratings

.

(BR)DSS

Electrical ratings

1.85 A

1.16 A

70 W

-55 to 150 °C

Table 2. Thermal data

Symbol

R

thj-case

R

thj-pcb

R

thj-amb

1. When mounted on FR-4 board of 1 inch², 2 oz Cu.

Thermal resistance junction-case 1.79

(1)

Thermal resistance junction-pcb 50 - -

Thermal resistance junction-ambient 62.5 100

Parameter

Table 3. Avalanche characteristics

Symbol

(1)

IAR

EAS

1. Pulse width limited by T

2. Starting Tj = 25°C, ID = IAR, VDD = 50 V

Avalanche current, repetitive or not-repetitive 1.85 A

(2)

.

Single pulse avalanche energy 170 mJ

.

jmax

Parameter Value Unit

Value

Unit

DPAK TO-220 IPAK

°C/W

DS5280 - Rev 3

page 2/23

2 Electrical characteristics

(T

= 25 °C unless otherwise specified)

CASE

Symbol Parameter Test conditions Min. Typ. Max. Unit

V

(BR)DSS

I

DSS

I

GSS

V

GS(th)

R

DS(on)

1. Defined by design, not subject to production test.

Drain-source breakdown
voltage

Zero gate voltage drain
current

Gate-body leakage
current

Gate threshold voltage

Static drain-source on
resistance

STD2NK100Z, STP2NK100Z, STU2NK100Z

Table 4. On/off states

VGS = 0 V, ID = 1 mA

VGS = 0 V, VDS = 1000 V

VGS = 0 V, VDS = 1000 V,
TC = 125 °C

VDS = 0 V, VGS = ±30 V

VDS = VGS, ID = 50 µA

VGS = 10 V, ID = 0.9 A

(1)

Electrical characteristics

1000 V

1 µA

50 µA

±10 µA

3 3.75 4.5 V

6.25 8.5 Ω

C

1. C

Table 5. Dynamic

Symbol

C

iss

C

oss

C

rss

(1)

oss eq.

R

G

Q

g

Q

gs

Q

gd

is defined as a constant equivalent capacitance giving the same charging time as C

oss eq.

80% V

DSS

.

Parameter Test conditions Min. Typ. Max. Unit

Input capacitance

Output capacitance 53

Reverse transfer

VDS = 25 V, f = 1 MHz,

VGS = 0 V

capacitance

Equivalent output
capacitance

VGS = 0 V, VDS = 0 V to 800 V

Gate input resistance f = 1 MHz, open drain - 6.6 - Ω

Total gate charge

Gate-source charge 3

Gate-drain charge 9

VDD = 800 V, ID = 1.85 A,

VGS = 0 to 10 V

(see Figure 16. Test circuit for gate charge

behavior)

Table 6. Switching times

Symbol

t

d(on)

t

r

t

d(off)

t

r

Parameter Test conditions Min. Typ. Max. Unit

Turn-on delay time

Rise time 6.5

Turn-off delay time 41.5

Fall time 32.5

VDD = 500 V, ID = 0.9 A, RG = 4.7 Ω,
VGS = 10 V

(see Figure 15. Test circuit for resistive load

switching times and Figure 20. Switching
time waveform)

499

-

- pF

9

- 28 - pF

16

-

when VDSincreases from 0 to

oss

- nC

7.2

-

- ns

DS5280 - Rev 3

page 3/23

STD2NK100Z, STP2NK100Z, STU2NK100Z

Electrical characteristics

Table 7. Source-drain diode

Symbol Parameter Test conditions Min. Typ. Max. Unit

I

SD

I

SDM

VSD

t

rr

Q

I

RRM

t

rr

Q

I

RRM

1. Pulse width is limited by safe operating area.

2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%.

Source-drain current - 1.85

Source-drain current

(1)

(pulsed)

(2)

Forward on voltage

Reverse recovery time

Reverse recovery charge - 1.6 μC

rr

Reverse recovery current - 6.9 A

Reverse recovery time

Reverse recovery charge - 1.9 μC

rr

Reverse recovery current - 88 A

ISD = 1.85 A, VGS = 0 V

ISD = 1.85 A, di/dt = 100 A/µs

VDD = 60 V

(see Figure 17. Test circuit for inductive

load switching and diode recovery times)

ISD = 1.85 A, di/dt = 100 A/µs

VDD = 60 V, Tj = 150 °C

(see Figure 17. Test circuit for inductive

load switching and diode recovery times)

- 7.4

- 1.6 V

- 476 ns

- 532 ns

A

Table 8. Gate-source Zener diode

Symbol Parameter Test conditions Min. Typ. Max. Unit

V

(BR)GSO

Gate-source breakdown
voltage

IGS = ±1 mA, ID = 0 A

30 - - V

The built-in back-to-back Zener diodes are specifically designed to enhance the ESD performance of the device.
The Zener voltage facilitates efficient and cost-effective device integrity protection, thus eliminating the need for
additional external componentry.

DS5280 - Rev 3

page 4/23

2.1 Electrical characteristics (curves)

δ=0.5

K

10

tp(s)

-5

10

-4

10

-3

10

-1

10

-2

δ=0.2

10

-1

10

-2

Single pulse

0.05

0.02

0.01

0.1

GC20540_ZTH

STD2NK100Z, STP2NK100Z, STU2NK100Z

Electrical characteristics (curves)

Figure 1. Safe operating area for IPAK, DPAK

Figure 3. Safe operating area for TO-220

Figure 2. Thermal impedance for IPAK, DPAK

Figure 4. Thermal impedance for TO-220

DS5280 - Rev 3

Figure 5. Output characterisics Figure 6. Transfer characteristics

page 5/23

VDS=V

GS

STD2NK100Z, STP2NK100Z, STU2NK100Z

Electrical characteristics (curves)

Figure 7. Normalized V

(BR)DSS

vs temperature

Figure 8. Static drain-source on resistance

Figure 9. Gate charge vs gate-source voltage Figure 10. Capacitance variations

Figure 11. Normalized gate threshold voltage vs

temperature

DS5280 - Rev 3

Figure 12. Normalized on resistance vs temperature

page 6/23

TJ(°C)14013012 011010 09080706050403020100

E

AS(

mJ )
190
180
170
160
150
140
1

30
120
110

100

90
80
70
60
50
40
30
20
10

AM00056 v1

I

D

=1.8 5A

STD2NK100Z, STP2NK100Z, STU2NK100Z

Electrical characteristics (curves)

Figure 13. Source-drain diode forward characteristics

Figure 14. Maximum avalanche energy vs temperature

DS5280 - Rev 3

page 7/23

3 Test circuits

AM01468v1

V

D

R

G

R

L

D.U.T.

2200

μF

V

DD

3.3
μF

+

pulse width

V

GS

AM01469v1

47 kΩ

1 kΩ

47 kΩ

2.7 kΩ

1 kΩ

12 V

IG= CONST

100 Ω

100 nF

D.U.T.

+

pulse width

V

GS

2200

μF

V

G

V

DD

AM01470v1

A

D

D.U.T.

S

B

G

25 Ω

A

A

B

B

R

G

G

D

S

100 µH

µF

3.3

1000

µF

V

DD

D.U.T.

+

_

+

fast
diode

AM01471v1

V

D

I

D

D.U.T.

L

V

DD

+

pulse width

V

i

3.3
µF

2200
µF

AM01472v1

V(BR)DSS

VDD

VDD

VD

IDM

ID

AM01473v1

0

V

GS

90%

V

DS

90%

10%

90%

10%

10%

t

on

t

d(on)

t

r

0

t

off

t

d(off)

t

f

STD2NK100Z, STP2NK100Z, STU2NK100Z

Test circuits

Figure 15. Test circuit for resistive load switching times

Figure 17. Test circuit for inductive load switching and

diode recovery times

Figure 16. Test circuit for gate charge behavior

Figure 18. Unclamped inductive load test circuit

DS5280 - Rev 3

Figure 19. Unclamped inductive waveform

Figure 20. Switching time waveform

page 8/23

4 Package information

STD2NK100Z, STP2NK100Z, STU2NK100Z

Package information

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK
packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions
and product status are available at: www.st.com. ECOPACK® is an ST trademark.

®

DS5280 - Rev 3

page 9/23

0068772_A_25

STD2NK100Z, STP2NK100Z, STU2NK100Z

4.1 DPAK (TO-252) type A package information

Figure 21. DPAK (TO-252) type A package outline

DPAK (TO-252) type A package information

DS5280 - Rev 3

page 10/23

STD2NK100Z, STP2NK100Z, STU2NK100Z

DPAK (TO-252) type A package information

Table 9. DPAK (TO-252) type A mechanical data

Dim.

Min. Typ. Max.

A 2.20 2.40

A1 0.90 1.10

A2 0.03 0.23

b 0.64 0.90

b4 5.20 5.40

c 0.45 0.60

c2 0.48 0.60

D 6.00 6.20

D1 4.95 5.10 5.25

E 6.40 6.60

E1 4.60 4.70 4.80

e 2.159 2.286 2.413

e1 4.445 4.572 4.699

H 9.35 10.10

L 1.00 1.50

(L1) 2.60 2.80 3.00

L2 0.65 0.80 0.95

L4 0.60 1.00

R 0.20

V2 0° 8°

mm

DS5280 - Rev 3

page 11/23

0068772_type-E_rev.25

STD2NK100Z, STP2NK100Z, STU2NK100Z

4.2 DPAK (TO-252) type E package information

Figure 22. DPAK (TO-252) type E package outline

DPAK (TO-252) type E package information

DS5280 - Rev 3

page 12/23

FP_0068772_25

STD2NK100Z, STP2NK100Z, STU2NK100Z

DPAK (TO-252) type E package information

Table 10. DPAK (TO-252) type E mechanical data

Dim.

Min. Typ. Max.

A 2.18 2.39

A2 0.13

b 0.65 0.884

b4 4.95 5.46

c 0.46 0.61

c2 0.46 0.60

D 5.97 6.22

D1 5.21

E 6.35 6.73

E1 4.32

e 2.286

e1 4.572

H 9.94 10.34

L 1.50 1.78

L1 2.74

L2 0.89 1.27

L4 1.02

mm

Figure 23. DPAK (TO-252) recommended footprint (dimensions are in mm)

DS5280 - Rev 3

page 13/23

4.3 DPAK (TO-252) packing information

P1

A0

D1

P0

F

W

E

D

B0

K0

T

User direction of feed

P2

10 pitches cumulative
tolerance on tape +/- 0.2 mm

User direction of feed

R

Bending radius

B1

For machine ref. only
including draft and
radii concentric around B0

AM08852v1

Top cover
tape

Figure 24. DPAK (TO-252) tape outline

STD2NK100Z, STP2NK100Z, STU2NK100Z

DPAK (TO-252) packing information

DS5280 - Rev 3

page 14/23

A

D

B

Full radius

Tape slot

in core for

tape start

2.5mm min.width

G measured

at hub

C

N

40mm min.
access hole
at slot location

T

AM06038v1

STD2NK100Z, STP2NK100Z, STU2NK100Z

Figure 25. DPAK (TO-252) reel outline

DPAK (TO-252) packing information

Table 11. DPAK (TO-252) tape and reel mechanical data

Tape

Dim.

A0 6.8 7 A 330

B0 10.4 10.6 B 1.5

B1 12.1 C 12.8 13.2

D 1.5 1.6 D 20.2

D1 1.5 G 16.4 18.4

E 1.65 1.85 N 50

F 7.4 7.6 T 22.4

K0 2.55 2.75

P0 3.9 4.1 Base qty. 2500

P1 7.9 8.1 Bulk qty. 2500

P2 1.9 2.1

R 40

T 0.25 0.35

W 15.7 16.3

Min. Max. Min. Max.

mm

Dim.

Reel

mm

DS5280 - Rev 3

page 15/23

4.4 TO-220 type A package information

0015988_typeA_Rev_21

Figure 26. TO-220 type A package outline

STD2NK100Z, STP2NK100Z, STU2NK100Z

TO-220 type A package information

DS5280 - Rev 3

page 16/23

STD2NK100Z, STP2NK100Z, STU2NK100Z

TO-220 type A package information

Table 12. TO-220 type A package mechanical data

Dim.

Min. Typ. Max.

A 4.40 4.60

b 0.61 0.88

b1 1.14 1.55

c 0.48 0.70

D 15.25 15.75

D1 1.27

E 10.00 10.40

e 2.40 2.70

e1 4.95 5.15

F 1.23 1.32

H1 6.20 6.60

J1 2.40 2.72

L 13.00 14.00

L1 3.50 3.93

L20 16.40

L30 28.90

øP 3.75 3.85

Q 2.65 2.95

mm

DS5280 - Rev 3

page 17/23

0068771_IK_typeA_rev14

STD2NK100Z, STP2NK100Z, STU2NK100Z

4.5 IPAK (TO-251) type A package information

Figure 27. IPAK (TO-251) type A package outline

IPAK (TO-251) type A package information

DS5280 - Rev 3

page 18/23

STD2NK100Z, STP2NK100Z, STU2NK100Z

IPAK (TO-251) type A package information

Table 13. IPAK (TO-251) type A package mechanical data

Dim.

Min. Typ. Max.

A 2.20 2.40

A1 0.90 1.10

b 0.64 0.90

b2 0.95

b4 5.20 5.40

B5 0.30

c 0.45 0.60

c2 0.48 0.60

D 6.00 6.20

E 6.40 6.60

e 2.28

e1 4.40 4.60

H 16.10

L 9.00 9.40

L1 0.80 1.20

L2 0.80 1.00

V1 10°

mm

DS5280 - Rev 3

page 19/23

5 Ordering information

Order code Marking Package Packing

STD2NK100Z

STP2NK100Z TO-220

STU2NK100Z IPAK

Table 14. Order codes

2NK100Z

STD2NK100Z, STP2NK100Z, STU2NK100Z

Ordering information

DPAK Tape and reel

Tube

DS5280 - Rev 3

page 20/23

Revision history

Date Version Changes

24-Oct-2007 1 First release

18-Jun-2008 2

28-Jun-2018 3

STD2NK100Z, STP2NK100Z, STU2NK100Z

Table 15. Document revision history

– Inserted new package, mechanical data IPAK

– Document status promoted from preliminary data to datasheet.

Removed maturity status indication from cover page. The document status is production data.

Updated title in cover page, Section 1 Electrical ratings, Section 2 Electrical characteristics
and Section 4 Package information.

Minor text changes.

DS5280 - Rev 3

page 21/23

STD2NK100Z, STP2NK100Z, STU2NK100Z

Contents

Contents

1 Electrical ratings ..................................................................2

2 Electrical characteristics...........................................................3

2.1 Electrical characteristics (curves) .................................................5

3 Test circuits .......................................................................8

4 Package information...............................................................9

4.1 DPAK (TO-252) type A package information ........................................9

4.2 DPAK (TO-252) type E package information .......................................11

4.3 DPAK (TO-252) packing information..............................................13

4.4 TO-220 type A package information ..............................................15

4.5 IPAK (TO-251) type A package information........................................17

5 Ordering information .............................................................20

Revision history .......................................................................21

DS5280 - Rev 3

page 22/23

STD2NK100Z, STP2NK100Z, STU2NK100Z

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© 2018 STMicroelectronics – All rights reserved

DS5280 - Rev 3

page 23/23