ST MICROELECTRONICS STP2N80K5 Datasheet

STD2N80K5, STF2N80K5,

D(2, TAB)

G(1)

S(3)

AM01476v1

TO-220

1

2

3

TAB

1

3

DPAK

TAB

TO-220FP

IPA K

STP2N80K5, STU2N80K5

N-channel 800 V, 3.5 Ω typ., 2 A MDmesh™ K5 Power MOSFETs

in DPAK, TO-220FP, TO-220 and IPAK packages

Datasheet − production data

Features

2

1

TAB

3

2

1

Figure 1. Internal schematic diagram

Order codes V

STD2N80K5

3

STF2N80K5 20 W STP2N80K5

800 V 4.5 Ω 2 A

STU2N80K5

• Industry’s lowest R

DS

R

DS(on)

max I

* area

P

D

TOT

45 W

• Industry’s best figure of merit (FoM)

• Ultra low gate charge

• 100% avalanche tested

• Zener-protected

Applications

• Switching applications

Description

These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

Table 1. Device summary

Order codes Marking Package Packaging

STD2N80K5

DPAK Tape and reel

STF2N80K5 TO-220FP

2N80K5

TubeSTP2N80K5 TO-220

STU2N80K5 IPAK

September 2015 DocID024993 Rev 3 1/22

This is information on a product in full production.

www.st.com

22

Contents STD2N80K5, STF2N80K5, STP2N80K5, STU2N80K5

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

4 Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

4.1 DPAK (TO-252) type A package information . . . . . . . . . . . . . . . . . . . . . . 10

4.2 TO-220FP package in formation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

4.3 TO-220 package in formation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

4.4 IPAK (TO-251) type A package information . . . . . . . . . . . . . . . . . . . . . . . 17

5 Packaging information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19

6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21

2/22 DocID024993 Rev 3

STD2N80K5, STF2N80K5, STP2N80K5, STU2N80K5 Electrical ratings

1 Electrical ratings

Table 2. Absolute maximum ratings

Value

Symbol Parameter

V

GS

I

D

I

D

(2)

I

DM

P

TOT

I

AR

E

AS

dv/dt dv/dt

T

j

T

stg

1. For TO-220FP limited by maximum junction temperature.

2. Pulse width limited by safe operating area.

3. ISD ≤ 2 A, di/dt ≤ 100 A/µs, peak VDS ≤ V

4. VDS ≤ 640 V

Gate- source voltage 30 V Drain current (continuous) at TC = 25 °C 2 Drain current (continuous) at TC = 100 °C 1.3 A Drain curr ent (pulsed) 8 A Total dissipation at TC = 25 °C 45 20 W Max current during repetitive or single pulse

avalanche (pulse wi dth limited by T

jmax

Single pulse avalanche energy (starting TJ = 25 °C, ID=IAS, VDD= 50 V)

(3)

Peak diode recovery voltage slope 4.5 V/ns

(4)

MOSFET dv/dt ruggedness 50 V/ns Operating junction temperature Storage temperature °C

(BR)DSS

DPAK,

TO-220,

TO-220FP

Unit

IPAK

(1)

)

0.5 A

A

60.5 mJ

°C

-55 to 150

Table 3. Thermal data

Symbol Parameter

R

thj-case

thj-pcb

R

thj-amb

1. When mounted on FR-4 board of 1 inch², 2 oz Cu.

Thermal resistance jun cti on- cas e 2.78 6.25 2.78 2.78 Thermal resistance jun cti on- pcb 50 Thermal resistance jun cti on- amb 62.5 100

DocID024993 Rev 3 3/22

Value

DPAK TO-220FP TO-220 IPAK

(1)

Unit

°C/WR

Electrical characteristics STD2N80K5, STF2N80K5, STP2N80K5, STU2N80K5

2 Electrical characteristics

(T

= 25 °C unless otherwise specified).

CASE

T a ble 4. On/off states

Symbol Parameter Test conditions Min. T yp . Max. Uni t

V

R

(BR)DSS

I

DSS

I

GSS

GS(th)

DS(on)

Drain-source breakdown voltage (V

GS

= 0)

Zero gate voltage drain current (V

GS

= 0)

Gate body leakage current (V

= 0)

DS

Gate threshold volta ge V Static drain-source on-

resistance

= 1 mA 800 V

I

D

V

= 800 V 1 µA

DS

V

= 800 V TC=125 °C 50 µA

DS

= ± 20 V ±10 µA

V

GS

= VGS, ID = 100 µA 3 4 5 V

DS

= 10 V , ID= 1 A 3.5 4.5 Ω

V

GS

Table 5. Dynamic

Symbol Parameter Test conditions Min. Typ. Max. Unit

C

o(tr)

o(er)

Input capacitance

iss

Output capacitance - 8 - pF

oss

Reverse transfer

rss

capacitance Equivalent capacit ance time

(1)

V

=100 V, f=1 MHz, VGS=0

DS

V

Equivalent capacitance

(2)

GS

energy related

- 105 - pF

-0.5-pF

-16-pF

-7-pF

R

Q Q Q

1. Time related is defined as a constant equivalent capacitance giving the same charging time as C VDS increases from 0 to 80% V

2. Energy related is defined as a constant equivalent capacitance giving the same stored energy as C when V

Intrinsic gate resistance f = 1 MHz, ID=0 - 18 - Ω

G

Total gate charge

g

Gate-source charge - 1 - nC

gs

Gate-drain charge - 3.7 - nC

gd

DSS

increases from 0 to 80% V

DS

DSS

V

= 640 V, ID = 2 A

DD

V

=10 V

GS

4/22 DocID024993 Rev 3

-5-nC

when

oss

STD2N80K5, STF2N80K5, STP2N80K5, STU2N80K5 Electrical characteristics

Table 6. Switching times

Symbol Parameter Test conditions Min. Typ. Max. Unit

t

d(on)

t

d(off)

Turn-on delay time

t

Rise time - 12 - ns

r

Turn-of f del ay time - 19 - ns

t

Fall time - 32 - ns

f

= 400 V, ID = 1 A,

V

DD

=4.7 Ω, VGS=10 V

R

G

-8-ns

T a ble 7. Source drain diode

Symbol Parameter Test conditions Min. Typ. Max. Unit

I

SD

I

SDM

V

SD

t

Q

I

RRM

t

Q

I

RRM

1. Pulse width limited by safe operating area

2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Source-drain current - 2 A

(1)

Source-drain current (pulsed) - 8 A

(2)

Forward on voltage ISD= 2 A, VGS=0 - 1.5 V Reverse recovery time

rr

Reverse recovery charge - 1 µC

rr

I

= 2 A, VDD= 60 V

SD

di/dt = 100 A/µs,

- 255 ns

Reverse recovery current - 8 A Reverse recovery time

rr

Reverse recovery charge - 1.45 µC

rr

Reverse recovery current - 7.5 A

ISD= 2 A,VDD= 60 V di/dt=100 A/µs,

Tj=150 °C

- 285 ns

Table 8. Gate-source Zener diode

Symbol Parameter Test conditions Min. Typ. Max. Unit

V

(BR)GSO

Gate-source breakdown voltage IGS= ± 1mA, ID= 0 30 - - V

The built-in back-to-back Zener diodes have been specifically designed to enhance the ESD capability of the device. The Zener voltage is appropriate for efficient and cost-effective intervention to protect the device integrity. These integrated Zener diodes thus eliminate the need for external components.

DocID024993 Rev 3 5/22

Electrical characteristics STD2N80K5, STF2N80K5, STP2N80K5, STU2N80K5

I

D

10

1

0.1

1

V

DS

(V)

10

(A)

Operation in this area is

Limited by max R

DS(on)

10ms

1ms

100μs

0.01

Tj=150°C Tc= 2 5° C

Single pulse

10ms

100

AM18072v1

I

D

10

1

0.1

1

V

DS

(V)

10

(A)

Operation in this area is

Limited by max R

DS(on)

10μs

1ms

100μs

0.01

Tj=150°C Tc=25°C

Single pulse

10ms

100

AM18073v1

I

D

1

0.1

1

V

DS

(V)

10

(A)

Operation in this area is

Limited by max R

DS(on)

10μs

1ms

100μs

0.01

Tj=150°C Tc=25°C

Single pulse

10ms

100

AM18074v1

2.1 Electrical characteristics (curves)

Figure 2. Safe operating area for DPAK and

Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP

IPAK

Figure 3. Thermal impedance for DPAK and

IPAK

Figure 6. Safe operating area for TO-220 Figure 7. Thermal impedance for TO-220

6/22 DocID024993 Rev 3

STD2N80K5, STF2N80K5, STP2N80K5, STU2N80K5 Electrical characteristics

I

D

2.5

1.5

0.5

0.0 0

2

V

DS

(V)

4

(A)

6

6V

7V

VGS=10, 11V

1.0

2.0

3.0

8V

9V

8

10

12

14

16

AM18075v1

10

6

4

2

0

02413

8

10

12

500

300

200

100

0

400

600

Q

g

(nC)

V

GS

(V)

V

DS

V

DS

(V)

14

65

700

V

DD

= 640 V

I

D

= 2 A

AM18076v1

R

DS(on)

2

0

0.0 1.0

I

D

(A)

(

Ω)

0.5 1.5

VGS=10V

2.0

4

6

2.5

AM18077v1

C

100

10

1

0.1

10

V

DS

(V)

(pF)

1

100

Ciss

Coss

Crss

100

f = 1MHz

AM18078v1

Figure 8. Output characteristics Figure 9. Transfer characteristics

I

D

(A)

3

2.5

2

1.5

1

0.5

VDS=20V

AM18085v1

0

Figure 10. Gate charge vs gate-source voltage Figure 11. Static drain-source on-resistance

Figure 12. Capacitance variations Figure 13. Output capacitance stored energy

E

oss

6

5

7

9

8

10

V

GS

AM18079v1

(μJ)

(V)

2

0

200

400

600

800

V

DS

(V)

DocID024993 Rev 3 7/22

ST MICROELECTRONICS STP2N80K5 Datasheet

Specifications and Main Features

Frequently Asked Questions

User Manual

Figure 1. Internal schematic diagram

Table 1. Device summary

1 Electrical ratings

Table 2. Absolute maximum ratings

Table 3. Thermal data

2 Electrical characteristics

T a ble 4. On/off states

Table 5. Dynamic

Table 6. Switching times

T a ble 7. Source drain diode

Table 8. Gate-source Zener diode

2.1 Electrical characteristics (curves)

Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP

Figure 6. Safe operating area for TO-220 Figure 7. Thermal impedance for TO-220

Figure 8. Output characteristics Figure 9. Transfer characteristics

Figure 10. Gate charge vs gate-source voltage Figure 11. Static drain-source on-resistance

Figure 12. Capacitance variations Figure 13. Output capacitance stored energy