ST MICROELECTRONICS STP2N80K5 Datasheet

STD2N80K5, STF2N80K5,

D(2, TAB)

G(1)

S(3)

AM01476v1

TO-220

1

2

3

TAB

1

3

DPAK

TAB

TO-220FP

IPA K

STP2N80K5, STU2N80K5

N-channel 800 V, 3.5 Ω typ., 2 A MDmesh™ K5 Power MOSFETs

in DPAK, TO-220FP, TO-220 and IPAK packages

Datasheet − production data

Features

2

1

TAB

3

2

1

Figure 1. Internal schematic diagram

Order codes V

STD2N80K5

3

STF2N80K5 20 W STP2N80K5

800 V 4.5 Ω 2 A

STU2N80K5

• Industry’s lowest R

DS

R

DS(on)

max I

* area

P

D

TOT

45 W

• Industry’s best figure of merit (FoM)

• Ultra low gate charge

• 100% avalanche tested

• Zener-protected

Applications

• Switching applications

Description

These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

Table 1. Device summary

Order codes Marking Package Packaging

STD2N80K5

DPAK Tape and reel

STF2N80K5 TO-220FP

2N80K5

TubeSTP2N80K5 TO-220

STU2N80K5 IPAK

September 2015 DocID024993 Rev 3 1/22

This is information on a product in full production.

www.st.com

22

Contents STD2N80K5, STF2N80K5, STP2N80K5, STU2N80K5

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

4 Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

4.1 DPAK (TO-252) type A package information . . . . . . . . . . . . . . . . . . . . . . 10

4.2 TO-220FP package in formation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

4.3 TO-220 package in formation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

4.4 IPAK (TO-251) type A package information . . . . . . . . . . . . . . . . . . . . . . . 17

5 Packaging information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19

6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21

2/22 DocID024993 Rev 3

STD2N80K5, STF2N80K5, STP2N80K5, STU2N80K5 Electrical ratings

1 Electrical ratings

Table 2. Absolute maximum ratings

Value

Symbol Parameter

V

GS

I

D

I

D

(2)

I

DM

P

TOT

I

AR

E

AS

dv/dt dv/dt

T

j

T

stg

1. For TO-220FP limited by maximum junction temperature.

2. Pulse width limited by safe operating area.

3. ISD ≤ 2 A, di/dt ≤ 100 A/µs, peak VDS ≤ V

4. VDS ≤ 640 V

Gate- source voltage 30 V Drain current (continuous) at TC = 25 °C 2 Drain current (continuous) at TC = 100 °C 1.3 A Drain curr ent (pulsed) 8 A Total dissipation at TC = 25 °C 45 20 W Max current during repetitive or single pulse

avalanche (pulse wi dth limited by T

jmax

Single pulse avalanche energy (starting TJ = 25 °C, ID=IAS, VDD= 50 V)

(3)

Peak diode recovery voltage slope 4.5 V/ns

(4)

MOSFET dv/dt ruggedness 50 V/ns Operating junction temperature Storage temperature °C

(BR)DSS

DPAK,

TO-220,

TO-220FP

Unit

IPAK

(1)

)

0.5 A

A

60.5 mJ

°C

-55 to 150

Table 3. Thermal data

Symbol Parameter

R

thj-case

thj-pcb

R

thj-amb

1. When mounted on FR-4 board of 1 inch², 2 oz Cu.

Thermal resistance jun cti on- cas e 2.78 6.25 2.78 2.78 Thermal resistance jun cti on- pcb 50 Thermal resistance jun cti on- amb 62.5 100

DocID024993 Rev 3 3/22

Value

DPAK TO-220FP TO-220 IPAK

(1)

Unit

°C/WR

Electrical characteristics STD2N80K5, STF2N80K5, STP2N80K5, STU2N80K5

2 Electrical characteristics

(T

= 25 °C unless otherwise specified).

CASE

T a ble 4. On/off states

Symbol Parameter Test conditions Min. T yp . Max. Uni t

V

R

(BR)DSS

I

DSS

I

GSS

GS(th)

DS(on)

Drain-source breakdown voltage (V

GS

= 0)

Zero gate voltage drain current (V

GS

= 0)

Gate body leakage current (V

= 0)

DS

Gate threshold volta ge V Static drain-source on-

resistance

= 1 mA 800 V

I

D

V

= 800 V 1 µA

DS

V

= 800 V TC=125 °C 50 µA

DS

= ± 20 V ±10 µA

V

GS

= VGS, ID = 100 µA 3 4 5 V

DS

= 10 V , ID= 1 A 3.5 4.5 Ω

V

GS

Table 5. Dynamic

Symbol Parameter Test conditions Min. Typ. Max. Unit

C

o(tr)

o(er)

Input capacitance

iss

Output capacitance - 8 - pF

oss

Reverse transfer

rss

capacitance Equivalent capacit ance time

(1)

V

=100 V, f=1 MHz, VGS=0

DS

V

Equivalent capacitance

(2)

GS

energy related

- 105 - pF

-0.5-pF

-16-pF

-7-pF

R

Q Q Q

1. Time related is defined as a constant equivalent capacitance giving the same charging time as C VDS increases from 0 to 80% V

2. Energy related is defined as a constant equivalent capacitance giving the same stored energy as C when V

Intrinsic gate resistance f = 1 MHz, ID=0 - 18 - Ω

G

Total gate charge

g

Gate-source charge - 1 - nC

gs

Gate-drain charge - 3.7 - nC

gd

DSS

increases from 0 to 80% V

DS

DSS

V

= 640 V, ID = 2 A

DD

V

=10 V

GS

4/22 DocID024993 Rev 3

-5-nC

when

oss

STD2N80K5, STF2N80K5, STP2N80K5, STU2N80K5 Electrical characteristics

Table 6. Switching times

Symbol Parameter Test conditions Min. Typ. Max. Unit

t

d(on)

t

d(off)

Turn-on delay time

t

Rise time - 12 - ns

r

Turn-of f del ay time - 19 - ns

t

Fall time - 32 - ns

f

= 400 V, ID = 1 A,

V

DD

=4.7 Ω, VGS=10 V

R

G

-8-ns

T a ble 7. Source drain diode

Symbol Parameter Test conditions Min. Typ. Max. Unit

I

SD

I

SDM

V

SD

t

Q

I

RRM

t

Q

I

RRM

1. Pulse width limited by safe operating area

2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Source-drain current - 2 A

(1)

Source-drain current (pulsed) - 8 A

(2)

Forward on voltage ISD= 2 A, VGS=0 - 1.5 V Reverse recovery time

rr

Reverse recovery charge - 1 µC

rr

I

= 2 A, VDD= 60 V

SD

di/dt = 100 A/µs,

- 255 ns

Reverse recovery current - 8 A Reverse recovery time

rr

Reverse recovery charge - 1.45 µC

rr

Reverse recovery current - 7.5 A

ISD= 2 A,VDD= 60 V di/dt=100 A/µs,

Tj=150 °C

- 285 ns

Table 8. Gate-source Zener diode

Symbol Parameter Test conditions Min. Typ. Max. Unit

V

(BR)GSO

Gate-source breakdown voltage IGS= ± 1mA, ID= 0 30 - - V

The built-in back-to-back Zener diodes have been specifically designed to enhance the ESD capability of the device. The Zener voltage is appropriate for efficient and cost-effective intervention to protect the device integrity. These integrated Zener diodes thus eliminate the need for external components.

DocID024993 Rev 3 5/22

Electrical characteristics STD2N80K5, STF2N80K5, STP2N80K5, STU2N80K5

I

D

10

1

0.1

1

V

DS

(V)

10

(A)

Operation in this area is

Limited by max R

DS(on)

10ms

1ms

100μs

0.01

Tj=150°C Tc= 2 5° C

Single pulse

10ms

100

AM18072v1

I

D

10

1

0.1

1

V

DS

(V)

10

(A)

Operation in this area is

Limited by max R

DS(on)

10μs

1ms

100μs

0.01

Tj=150°C Tc=25°C

Single pulse

10ms

100

AM18073v1

I

D

1

0.1

1

V

DS

(V)

10

(A)

Operation in this area is

Limited by max R

DS(on)

10μs

1ms

100μs

0.01

Tj=150°C Tc=25°C

Single pulse

10ms

100

AM18074v1

2.1 Electrical characteristics (curves)

Figure 2. Safe operating area for DPAK and

Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP

IPAK

Figure 3. Thermal impedance for DPAK and

IPAK

Figure 6. Safe operating area for TO-220 Figure 7. Thermal impedance for TO-220

6/22 DocID024993 Rev 3

STD2N80K5, STF2N80K5, STP2N80K5, STU2N80K5 Electrical characteristics

I

D

2.5

1.5

0.5

0.0 0

2

V

DS

(V)

4

(A)

6

6V

7V

VGS=10, 11V

1.0

2.0

3.0

8V

9V

8

10

12

14

16

AM18075v1

10

6

4

2

0

02413

8

10

12

500

300

200

100

0

400

600

Q

g

(nC)

V

GS

(V)

V

DS

V

DS

(V)

14

65

700

V

DD

= 640 V

I

D

= 2 A

AM18076v1

R

DS(on)

2

0

0.0 1.0

I

D

(A)

(

Ω)

0.5 1.5

VGS=10V

2.0

4

6

2.5

AM18077v1

C

100

10

1

0.1

10

V

DS

(V)

(pF)

1

100

Ciss

Coss

Crss

100

f = 1MHz

AM18078v1

Figure 8. Output characteristics Figure 9. Transfer characteristics

I

D

(A)

3

2.5

2

1.5

1

0.5

VDS=20V

AM18085v1

0

Figure 10. Gate charge vs gate-source voltage Figure 11. Static drain-source on-resistance

Figure 12. Capacitance variations Figure 13. Output capacitance stored energy

E

oss

6

5

7

9

8

10

V

GS

AM18079v1

(μJ)

(V)

2

0

200

400

600

800

V

DS

(V)

DocID024993 Rev 3 7/22

Electrical characteristics STD2N80K5, STF2N80K5, STP2N80K5, STU2N80K5

1.1

0.8

0.6

0.4 T

J

(°C)

0.5

0.7

0.9

1

1.2

-100

0

-50

100

50

150

V

GS(th)

(norm)

AM18082v1

ID=100 μA

V

(BR)DSS

-100

0

T

J

(°C)

(norm)

-50

50

100

0.85

0.9

0.95

1

1.05

1.1

ID=1mA

AM18083v1

E

AS

0

40

T

J

(°C)

(mJ)

20

100

60

80

0

10

20

30

40

120

140

50

60

AM18086v1

Figure 14. Normalized gate threshold voltage vs

Figure 16. Normalized V

temperature

(BR)DSS

vs temperature Figure 17. Source-drain diode forward

Figure 15. Normalized on-resistance vs

temperature

150

AM18081v1

J

(°C)

T

DS(on)

R

(norm)

2.5

1.5

0.5

2

1

0

-100

-50

D

=1 A

I V

GS

=10 V

50

100

0

characteristics

(V)

V

SD

TJ=-50°C

1

0.9

TJ=25°C

AM18084v1

Figure 18. Maximum avalanche energy vs

8/22 DocID024993 Rev 3

starting T

J

0.8

0.7

0.6

0.5

TJ=150°C

0

0.5

1.5

1

I

SD

2

(A)

STD2N80K5, STF2N80K5, STP2N80K5, STU2N80K5 Test circuits

AM01468v1

VGS

PW

VD

RG

RL

D.U.T.

2200

μF

3.3 μF

V

DD

AM01469v1

VDD

47kΩ

1kΩ

47kΩ

2.7kΩ

1kΩ

12V

V

i=20V=VGMAX

2200 μF

PW

IG=CONST

100Ω

100nF

D.U.T.

V

G

AM01470v1

A

D

D.U.T.

S

B

G

25

Ω

A

B

R

G

FAST DIODE

D

S

L=100μH

μF

3.3

1000

μF

V

DD

AM01472v1

V(BR)DSS

VDD

VD

IDM

ID

3 Test circuits

Figure 19. Switching times test circuit for

resistive load

Figure 21. Test circuit for inductive load

switching and diode recovery times

Figure 20. Gate charge test circuit

Figure 22. Unclamped inductive load test circuit

L

VD

2200

μF

3.3 μF

VDD

Figure 23. Unclamped inductive waveform Figure 24. Switching time waveform

ID

Vi

D.U.T.

Pw

AM01471v1

tdon

ton

tr

90%

tdoff

toff

tf

90%

10%

0

10%

VDS

90%

V

GS

10%

0

AM01473v1

DocID024993 Rev 3 9/22

Package information STD2N80K5, STF2N80K5, STP2N80K5, STU2N80K5

B$B

4 Package information

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK

®

packages, depending on their level of environmental compliance. ECOPACK®

®

is an ST trademark.

4.1 DPAK (TO-252) type A package information

Figure 25. DPAK (TO-252) type A outline

10/22 DocID024993 Rev 3

STD2N80K5, STF2N80K5, STP2N80K5, STU2N80K5 Package information

Table 9. DPAK (TO-252) type A mechanical data

mm

Dim.

Min. Typ. Max.

A2.20 2.40 A1 0.90 1.10 A2 0.03 0.23

b0.64 0.90

b4 5.20 5.40

c0.45 0.60

c2 0.48 0.60

D6.00 6.20 D1 4.95 5.10 5.25

E6.40 6.60 E1 4.60 4.70 4.80

e2.162.282.40

e1 4.40 4.60

H 9.35 10.10

L1.00 1.50

(L1) 2.60 2.80 3.00

L2 0.65 0.80 0.95 L4 0.60 1.00

R0.20 V2 0° 8°

DocID024993 Rev 3 11/22

Package information STD2N80K5, STF2N80K5, STP2N80K5, STU2N80K5

)3BB

Figure 26. DPAK (TO-252) footprint

(a)

a. All dimensions are in millimeters

12/22 DocID024993 Rev 3

STD2N80K5, STF2N80K5, STP2N80K5, STU2N80K5 Package information

7012510_Rev_K_B

4.2 TO-220FP package information

Figure 27. TO-220FP package outline

DocID024993 Rev 3 13/22

Package information STD2N80K5, STF2N80K5, STP2N80K5, STU2N80K5

T a ble 10. TO-220FP package mechanical data

mm

Dim.

Min. Typ. Max.

A4.4 4.6

B2.5 2.7

D2.5 2.75

E 0.45 0.7

F0.75 1 F1 1.15 1.70 F2 1.15 1.70

G 4.95 5.2 G1 2.4 2.7

H10 10.4

L2 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3

Dia 3 3.2

14/22 DocID024993 Rev 3

STD2N80K5, STF2N80K5, STP2N80K5, STU2N80K5 Package information

BW\SH$B5HYB7

4.3 TO-220 package information

Figure 28. TO-220 package outline

DocID024993 Rev 3 15/22

Package information STD2N80K5, STF2N80K5, STP2N80K5, STU2N80K5

Table 11. TO-220 package mechanical data

mm

Dim.

Min. Typ. Max.

A4.40 4.60

b0.61 0.88

b1 1.14 1.70

c0.48 0.70

D 15.25 15.75 D1 1.27

E 10 10.40

e2.40 2.70

e1 4.95 5.15

F1.23 1.32 H1 6.20 6.60

J1 2.40 2.72

L13 14

L1 3.50 3.93 L20 16.40 L30 28.90

∅

P3.75 3.85

Q2.65 2.95

16/22 DocID024993 Rev 3

STD2N80K5, STF2N80K5, STP2N80K5, STU2N80K5 Package information

B,.BW\SH$BUHY

4.4 IPAK (TO-251) type A package information

Figure 29. IPAK (TO-251) type A package outline

DocID024993 Rev 3 17/22

Package information STD2N80K5, STF2N80K5, STP2N80K5, STU2N80K5

Table 12. IPAK (TO-251) type A package mechanical data

mm.

DIM

min. typ. max.

A 2.20 2.40

A1 0.90 1.10

b 0.64 0.90 b2 0.95 b4 5.20 5.40 B5 0.30

c 0.45 0.60

c2 0.48 0.60

D 6.00 6.20 E 6.40 6.60

e2.28 e1 4.40 4.60

H16.10

L 9.00 9.40 L1 0.80 1.20 L2 0.80 1.00 V1 10°

18/22 DocID024993 Rev 3

STD2N80K5, STF2N80K5, STP2N80K5, STU2N80K5 Packaging information

P1

A0

D1

P0

F

W

E

D

B0

K0

T

User direction of feed

P2

10 pitches cumulative tolerance on tape +/- 0.2 mm

User direction of feed

R

Bending radius

B1

For machine ref. only including draft and radii concentric around B0

AM08852v1

Top cover tape

5 Packaging information

Figure 30. Tape for DPAK

DocID024993 Rev 3 19/22

Packaging information STD2N80K5, STF2N80K5, STP2N80K5, ST U2N8 0K5

A

D

B

Full radius

G measured at hub

C

N

REEL DIMENSIONS

40mm min.

Access hole

At slot location

T

Tape slot in core for tape start 25 mm min. width

AM08851v2

Figure 31. Reel for DPAK

T a ble 13. DPAK tape and reel mechanical data

Tape Reel

mm

Dim.

Min. Max. Min. Max.

A0 6.8 7 A 330 B0 10.4 10.6 B 1.5 B1 12.1 C 12.8 13.2

D 1.5 1.6 D 20.2

D1 1.5 G 16.4 18.4

E 1.65 1.85 N 50

F 7.4 7.6 T 22.4 K0 2.55 2.75 P0 3.9 4.1 Base qty. 2500 P1 7.9 8.1 Bulk qty. 2500 P2 1.9 2.1

R40

T 0.25 0.35

mm

W 15.7 16.3

20/22 DocID024993 Rev 3

STD2N80K5, STF2N80K5, STP2N80K5, STU2N80K5 Revision history

6 Revision history

Table 14. Document revision history

Date Revision Changes

11-Jul-2013 1 First release.

– Added: IPAK package

value in Table 2

AS

in Table 3

thj-case

18-Feb-2014 2

– Modified: E – Modified: R – Modified: typical values in Table 5, 6 and 7 – Added: Section 2.1: Electrical characteristics (curves) – Updated: Figure25, 26 and Table 9 – Added: Table 12 and Figure 29 – Minor text changes

– Updated title, features and description in cover page.

25-Sep-2015 3

– Updated Figure 10, Figure 11 and Section 4: Package

information.

– Minor text changes.

DocID024993 Rev 3 21/22

STD2N80K5, STF2N80K5, STP2N80K5, STU2N80K5

IMPORTANT NOTICE – PLEASE READ CAREFULLY

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Purchasers are solely r espon si ble for t he cho ic e, s elect ion, a nd use of ST produc ts and ST assume s no l iabil ity f or app lication as sist ance or the design of Purchasers’ products.

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Resale of ST products with provis ions different from the information set forth herein sha ll void any warranty granted by ST for such product.

ST and the ST logo are trademarks of ST. All other product or service names are the property of their res pective owners.

Information in this document supers edes and replaces information previously supplied in any prior versions of this document.

22/22 DocID024993 Rev 3