ST MICROELECTRONICS STP270N8F7 Datasheet

N-channel 80 V, 0.0017 Ω typ., 180 A, STripFET™ F7

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1

2

3

TAB

1

2

3

TAB

H2PAK-2

TO-220

H

2

PAK-6

Power MOSFETs in H

STH270N8F7-2, STH270N8F7-6,

STP270N8F7

2

PAK-2, H2PAK-6 and TO-220 packages

Datasheet − production data

TAB

7

1

Figure 1. Internal schematic diagram

Features

Order codes V

STH270N8F7-2

80 V

STP270N8F7 0.0025 Ω

• Among the lowest R

DS

DS(on)

R

max I

DS(on)

0.0021 Ω

on the market

D

180 ASTH270N8F7-6

• Excellent figure of merit (FoM)

• Low C

rss/Ciss

ratio for EMI immunity

• High avalanche ruggedness

Applications

• Switching applications

Description

These N-channel Power MOSFETs utilize
STripFET™ F7 technology with an enhanced
trench gate structure that results in very low on­state resistance, while also reducing internal
capacitance and gate charge for faster and more
efficien t switching.

Table 1. Device summary

Order codes Marking Package Packaging

STH270N8F7-2
STH270N8F7-6 H2PAK-6

STP270N8F7 TO-220 Tube

May 2015 DocID024006 Rev 4 1/22

This is information on a product in full production.

270N8F7

H2PAK-2

Tape and reel

www.st.com

22

Contents STH270N8F7-2, STH270N8F7-6, STP270N8F7

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

3 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

4 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

5 Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

5.1 H2PAK-2 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11

2

5.2 H

5.3 TO-220 type A package in formation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17

PAK-6 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

6 Packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19

7 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21

2/22 DocID024006 Rev 4

STH270N8F7-2, STH270N8F7-6, STP270N8F7 Electrical ratings

1 Electrical ratings

Table 2. Absolute maximum ratings

Symbol Parameter Value Unit

V

DS

V

GS

(1)

I

D

I

D

I

DM

P

TOT

E

AS

T

T

stg

1. Limited by package

2. Pulse width limited by safe operating area

3. This value is rated according to R

4. Starting Tj = 25°C, Id = 65 A, V

Drain-source voltage 80 V
Gate-source voltage ± 20 V
Drain current (continuous) 180 A

(1)

Drain current (continuous) at TC = 100 °C 180 A

(2)

Drain current (pulse d) 720 A

(3)

Total dissipation at TC = 25 °C 315 W

(4)

Single pulse avalanche energy 1.16 J
Operating junction temperature

J

Storage temperature °C

thj-c

= 50 V

dd

T able 3. Thermal resistance

Symbol Parameter

-55 to 175

2

PAK-2,

H

2

PAK-6

H

°C

Value

Unit

TO-220

R

thj-case

R

thj-pcb

R

thj-amb

1. When mounted on FR-4 board of 1 inch2, 2oz Cu

Thermal resistance jun ction-case 0.48 °C/W

(1)

Thermal resistance jun ction-pcb 35 °C/W
Thermal resistance jun cti on- amb ie nt max 62.5 °C/W

DocID024006 Rev 4 3/22

Electrical characteristics STH270N8F7-2, STH270N8F7-6, STP270N8F7

2 Electrical characteristics

(T

=25 °C unless otherwise specified)

CASE

Table 4. On/o ff states

Symbol Parameter Test conditions Min. Typ. Max. Unit

V

(BR)DSS

I

DSS

I

GSS

V

GS(th)

R

DS(on)

Drain-source breakdown
voltage (V

GS

= 0)

Zero gate voltage drain
current (V

GS

= 0)

Gate body leakage current
(VDS = 0)

= 250 µA 80 V

I

D

= 80 V

V

DS

V

= 80 V; TC=125 °C

DS

V

= +20 V 100 nA

GS

10

100µAµA

Gate threshold voltage VDS= VGS, ID = 250 µA 2 4 V

2

P AK-2, H2PAK-6:

Static drain-source on­resistance

For H
VGS= 10 V, ID= 90 A

For TO-220:

= 10 V, ID= 90 A

V

GS

0.0017 0.0021

0.0021 0.0025

Table 5. Dynamic

Symbol Parameter Test conditions Min. Typ. Max. Unit

Ω

C

C

C

Q

Q

Q

Input capacita nc e

iss

V

Output capacitance - 2050 - pF

oss

Reverse transfer

rss

capacitance
Total gate charge

g

Gate-source charge - 96 - nC

gs

Gate-drain charge - 46 - nC

gd

=50 V, f=1 MHz,

DS

V

=0

GS

=40 V, ID = 180 A

V

DD

V

=10 V

GS

Figure 19

- 13600 - pF

-236 - pF

-193 - nC

Table 6. Switching times

Symbol Parameter Test conditions Min. Typ. Max. Unit

t

d(on)

t

d(off)

Turn-on delay time

=40 V, ID= 90 A,

V

t

Rise time - 180 - ns

r

Turn-of f del ay time - 98 - ns

t

Fall time - 42 - ns

f

DD

R

=4.7 Ω, VGS= 10 V

G

Figure 18

-56-ns

4/22 DocID024006 Rev 4

STH270N8F7-2, STH270N8F7-6, STP270N8F7 Electrical characteristics

T a ble 7. Source drain diode

Symbol Parameter Test conditions Min Typ. Max Unit

I

SD

I

SDM

V

SD

t

Q

I

RRM

1. Pulse width limited by safe operating area

2. Pulsed: pulse duration=300µs, duty cycle 1.5%

Source-drain current - 180 A

(1)

Source-drain current (pulsed) - 720 A

(2)

Forward on voltage I
Reverse recovery time

rr

Reverse recovery charge - 182 nC

rr

Reverse recovery current - 4.7 A

= 90 A, VGS=0 - 1.2 V

SD

I

SD

= 180 A,

-78 ns

di/dt = 100 A/µs,
VDD=64 V, Tj=150 °C

DocID024006 Rev 4 5/22

Electrical characteristics (curves) STH270N8F7-2, STH270N8F7-6, STP270N8F7

I

D

10

1

0.1

1

V

DS

(V)

10

(A)

Operation in this area is

Limited by max R

DS(on)

1ms

10ms

0.1

Tj=175°C
Tc=25°C
Single pulse

100

100µs

AM15670v1

I

D

10

1

0.1

1

V

DS

(V)

10

(A)

Operation in this area is

Limited by max R

DS(on)

1ms

10ms

0.1

Tj=175°C
Tc=25°C
Single pulse

100

100µs

AM15671v1

K

10

t

p

(s)

-4

10

-3

10

-2

0.1

10

-5

0.01

AM15684v1

Single pulse

d=0.5

0.05

0.02

0.01

0.2

0.1

V

GS

6

4

2

0

0

50

Q

g

(nC)

(V)

150

8

100

10

VDD=40V

I

D

=180A

12

200

AM15683v1

I

D

150

100

50

0

0

4

V

DS

(V)

(A)

2

6

200

250

6V

7V

VGS=8, 9, 10V

300

5V

8

350

AM15673v1

3 Electrical characteristics (curves)

Figure 2. Safe operating area for H2PAK-2 and

2

H

Figure 4. Thermal impedance Figure 5. Gate charge vs gate-source voltage

PAK-6

Figure 3. Safe operating area for TO-220

Figure 6. Output characteristics for TO-220 Figure 7. Transfer characteristics for TO-220

6/22 DocID024006 Rev 4

(A)

I

D

AM15709v1

350

V

DS

=2V

300

250

200

150

100

50

0

1

2

3

0

4

7

8

9

V

GS

6

5

(V)

STH270N8F7-2, STH270N8F7-6, STP270N8F7 Electrical characteristics (curves)

I

D

150

100

50

0

0

4

V

DS

(V)

(A)

2

6

200

250

6V

7V

VGS=8, 9, 10V

300

5V

8

350

AM15672v1

V

(BR)DSS

-75

T

J

(°C)

(norm)

-50

0

-25

0.96

0.98

1

1.02

1.04

I

D

=1 mA

25

50

75

100 125

150

AM15681v1

R

DS(on)

2.15

2.10

2.05

2.00
0

40

I

D

(A)

(mΩ)

20

60

2.20

140

80

100

120

160

180

VGS=10V

AM15675v1

C

6000

4000

2000

0

0

20

V

DS(V)

(pF)

10

30

Ciss

Coss

Crss

40

50

60

8000

10000

12000

14000

16000

AM15676v1

Figure 8. Output characteristics for H2PAK-2

2

and H

Figure 10. Normalized V

PAK-6

(BR)DSS

vs temperature Figure 11. Static drain-source on-resistance for

Figure 9. Transfer characteristics for H

2

I

R

DS(on)

(A)

D

350

300

250

200

150

100

50

(mΩ)

1.74

and H

0

1

0

2

2

H

PAK-2 and H2PAK-6

3

DS

=2V

V

4

VGS=10V

PAK-6

6

5

7

8

2

PAK-2

AM15682v1

9

GS

(V)

V

AM15674v1

Figure 12. Static drain-source on-resistance for

TO-220

1.72

1.70

1.68

1.66
100

60

80

40

0

20

120

140

160

180

D

(A)

I

Figure 13. Capacitance variations

DocID024006 Rev 4 7/22