Page 1
December 2016
DocID15642 Rev 7
1/17
This is information on a product in full production.
www.st.com
STB26NM60N,
STP26NM60N
N-channel 600 V, 0.135 Ω typ., 20 A MDmesh™ II
Power MOSFETs in D²PAK and TO-220 packages
Datasheet - production data
Order code
VDS
R
DS(on)
max
ID
STB26NM60N
600 V
0.165 Ω
20 A
STP26NM60N
Order code
Marking
Package
Packaging
STB26NM60N
26NM60N
D²PAK
Tape and reel
STP26NM60N
TO-220
Tube
1
2
3
TAB
TO-220
TAB
D PAK
2
AM01475v1_noTab_noZen
D(2)
G(1)
S(3)
Features
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
Applications
Switching applications
Figure 1: Internal schematic diagram
Description
These devices are N-channel Power MOSFETs
developed using the second generation of
MDmesh™ technology. This revolutionary Power
MOSFET associates a vertical structure to the
company’s strip layout to yield one of the world’s
lowest on-resistance and gate charge. It is
therefore suitable for the most demanding high
efficiency converters.
Table 1: Device summary
Page 2
Contents
STB26NM60N, STP26NM60N
2/17
DocID15642 Rev 7
Contents
1 Electrical ratings ............................................................................. 3
2 Electrical characteristics ................................................................ 4
2.1 Electrical characteristics (curves) ...................................................... 6
3 Test circuits ..................................................................................... 8
4 Package information ....................................................................... 9
4.1 D2PAK (TO-263) type A package information................................... 9
4.2 D2PAK packaging information ........................................................ 12
4.3 TO-220 type A package information ................................................ 14
5 Revision history ............................................................................ 16
Page 3
STB26NM60N, STP26NM60N
Electrical ratings
DocID15642 Rev 7
3/17
Symbol
Parameter
Value
Unit
VDS
Drain-source voltage
600
V
VGS
Gate-source voltage
±30 V ID
Drain current (continuous) at TC = 25 °C
20 A ID
Drain current (continuous) at TC = 100 °C
12.6
A
I
DM
(1)
Drain current (pulsed)
80
A
P
TOT
Total dissipation at TC = 25 °C
140
W
dv/dt
(2)
Peak diode recovery voltage slope
15
V/ns
T
stg
Storage temperature range
-55 to 150
°C
Tj
Operating junction temperature range
Notes:
(1)
Pulse width limited by safe operating area.
(2)
ISD ≤ 20 A, di/dt ≤ 400 A/µs, V
DS(peak)
≤ V
(BR)DSS, VDD
= 80% V
(BR)DSS
Symbol
Parameter
Value
Unit
D²PAK
TO-220
R
thj-case
Thermal resistance junction-case
0.89
°C/W
R
thj-amb
Thermal resistance junction-ambient
62.5
°C/W
R
thj-pcb
(1)
Thermal resistance junction-pcb
30
°C/W
Notes:
(1)
When mounted on FR-4 board of 1inch², 2oz Cu, t < 10 s.
Symbol
Parameter
Value
Unit
IAS
Single pulse avalanche current (pulse width limited by T
jmax
)
6
A
EAS
Single pulse avalanche energy (starting TJ=25 °C, ID=IAS,
VDD=50 V)
610
mJ
1 Electrical ratings
Table 2: Absolute maximum ratings
Table 3: Thermal data
Table 4: Avalanche characteristics
Page 4
Electrical characteristics
STB26NM60N, STP26NM60N
4/17
DocID15642 Rev 7
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
breakdown voltage
ID = 1 mA, VGS = 0 V
600
V
I
DSS
Zero gate voltage drain
current
VGS = 0 V, VDS = 600 V
1
µA
VGS = 0 V, VDS = 600 V,
TC= 125 °C
(1)
100
I
GSS
Gate-body leakage current
VDS = 0 V, VGS = ±25 V
±0.1
µA
V
GS(th)
Gate threshold voltage
VDS = VGS, ID = 250 µA
2 3 4
V
R
DS(on)
Static drain-source onresistance
VGS = 10 V, ID = 10 A
0.135
0.165
Ω
Notes:
(1)
Defined by design, not subject to production test.
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
C
iss
Input capacitance
VDS = 50 V, f = 1 MHz,
VGS = 0 V
-
1800 - pF
C
oss
Output capacitance
-
115 - pF
C
rss
Reverse transfer
capacitance
- 6 -
pF
C
oss eq.
(1)
Equivalent output
capacitance
VGS = 0 V, VDS = 0 to 480 V
-
310 - pF
Qg
Total gate charge
VDD = 480 V, ID = 20 A,
VGS = 10 V
(see Figure 14: "Test circuit for
gate charge behavior"
-
60 - nC
Qgs
Gate-source charge
-
8.5 - nC
Qgd
Gate-drain charge
-
30 - nC
RG
Gate input resistance
f=1 MHz, ID=0 A
-
2.8 - Ω
Notes:
(1)
C
oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C
oss
when VDS
increases from 0 to 80% V
DS
2 Electrical characteristics
(T
= 25 °C unless otherwise specified)
CASE
Table 5: On/off states
Table 6: Dynamic
Page 5
STB26NM60N, STP26NM60N
Electrical characteristics
DocID15642 Rev 7
5/17
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
t
d(on)
Turn-on delay time
VDD = 300 V, ID = 10 A, RG = 4.7 Ω,
VGS = 10 V
(see Figure 13: "Test circuit for
resistive load switching times" and
Figure 18: "Switching time
waveform")
-
13 - ns
tr
Rise time
-
25 - ns
t
d(off)
Turn-off delay time
-
85 - ns
tf
Fall time
-
50 - ns
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ISD
Source-drain current
-
20
A
I
SDM
(1)
Source-drain current
(pulsed)
-
80
A
V
SD
(2)
Forward on voltage
ISD = 20 A, VGS = 0
-
1.5
V
trr
Reverse recovery time
ISD = 20 A, di/dt = 100 A/µs
VDD = 60 V
(see Figure 15: "Test circuit for
inductive load switching and diode
recovery times")
-
370
ns
Qrr
Reverse recovery
charge
-
5.8 µC
I
RRM
Reverse recovery
current
-
31.6 A
trr
Reverse recovery time
ISD = 20 A, di/dt = 100 A/µs
VDD = 60 V, Tj = 150 °C
(see Figure 15: "Test circuit for
inductive load switching and diode
recovery times")
-
450
ns
Qrr
Reverse recovery
charge
-
7.5 µC
I
RRM
Reverse recovery
current
-
32.5 A
Notes:
(1)
Pulse width limited by safe operating area.
(2)
Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Table 7: Switching times
Table 8: Source-drain diode
Page 6
Electrical characteristics
STB26NM60N, STP26NM60N
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Figure 2: Safe operating area
Figure 3: Thermal impedance
Figure 4: Output characteristics
Figure 5: Transfer characteristics
Figure 6: Gate charge vs gate-source voltage
Figure 7: Static drain-source on-resistance
W
2.1 Electrical characteristics (curves)
Page 7
STB26NM60N, STP26NM60N
Electrical characteristics
DocID15642 Rev 7
7/17
Figure 8: Capacitance variations
Figure 9: Source-drain diode forward characteristics
Figure 10: Normalized gate threshold voltage vs
temperature
Figure 11: Normalized on-resistance vs temperature
Figure 12: Normalized V
(BR)DSS
vs temperature
Page 8
Test circuits
STB26NM60N, STP26NM60N
8/17
DocID15642 Rev 7
Figure 13: Test circuit for resistive load
switching times
Figure 14: Test circuit for gate charge
behavior
Figure 15: Test circuit for inductive load
switching and diode recovery times
Figure 16: Unclamped inductive load test
circuit
Figure 17: Unclamped inductive waveform
Figure 18: Switching time waveform
3 Test circuits
Page 9
STB26NM60N, STP26NM60N
Package information
DocID15642 Rev 7
9/17
0079457_A_rev22
4 Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
4.1 D2PAK (TO-263) type A package information
Figure 19: D²PAK (TO-263) type A package outline
Page 10
Package information
STB26NM60N, STP26NM60N
10/17
DocID15642 Rev 7
Dim.
mm
Min.
Typ.
Max.
A
4.40
4.60
A1
0.03
0.23
b
0.70
0.93
b2
1.14
1.70
c
0.45
0.60
c2
1.23
1.36
D
8.95
9.35
D1
7.50
7.75
8.00
D2
1.10
1.30
1.50
E
10
10.40
E1
8.50
8.70
8.90
E2
6.85
7.05
7.25
e
2.54
e1
4.88
5.28
H
15
15.85
J1
2.49
2.69
L
2.29
2.79
L1
1.27
1.40
L2
1.30
1.75
R
0.4
V2
0°
8°
Table 9: D²PAK (TO-263) type A package mechanical data
Page 11
STB26NM60N, STP26NM60N
Package information
DocID15642 Rev 7
11/17
Figure 20: D²PAK (TO-263) recommended footprint (dimensions are in mm)
Page 12
Package information
STB26NM60N, STP26NM60N
12/17
DocID15642 Rev 7
4.2 D2PAK packaging information
Figure 21: Tape outline
Page 13
STB26NM60N, STP26NM60N
Package information
DocID15642 Rev 7
13/17
Tape
Reel
Dim.
mm
Dim.
mm
Min.
Max.
Min.
Max.
A0
10.5
10.7 A 330
B0
15.7
15.9 B 1.5 D 1.5
1.6 C 12.8
13.2
D1
1.59
1.61 D 20.2
E
1.65
1.85 G 24.4
26.4
F
11.4
11.6 N 100
K0
4.8
5.0 T 30.4
P0
3.9
4.1
P1
11.9
12.1
Base quantity
1000
P2
1.9
2.1
Bulk quantity
1000 R 50
T
0.25
0.35
W
23.7
24.3
Figure 22: Reel outline
Table 10: D²PAK tape and reel mechanical data
Page 14
Package information
STB26NM60N, STP26NM60N
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DocID15642 Rev 7
4.3 TO-220 type A package information
Figure 23: TO-220 type A package outline
Page 15
STB26NM60N, STP26NM60N
Package information
DocID15642 Rev 7
15/17
Dim.
mm
Min.
Typ.
Max.
A
4.40
4.60
b
0.61
0.88
b1
1.14
1.55
c
0.48
0.70
D
15.25
15.75
D1
1.27
E
10.00
10.40
e
2.40
2.70
e1
4.95
5.15
F
1.23
1.32
H1
6.20
6.60
J1
2.40
2.72
L
13.00
14.00
L1
3.50
3.93
L20
16.40
L30
28.90
øP
3.75
3.85
Q
2.65
2.95
Table 11: TO-220 type A mechanical data
Page 16
Revision history
STB26NM60N, STP26NM60N
16/17
DocID15642 Rev 7
Date
Revision
Changes
29-Apr-2009
1
First release.
17-Dec-2009
2
Added new package, mechanical data: D²PAK
20-Jun-2011
3
Inserted device in I²PAK.
13-Mar-2012
4
Updated P
TOT
and derating factor in Table 2.
Update R
thj-case
for TO-220FP in Table 3.
Update Figure 10 and Figure 15.
Update Section 5: Packaging mechanical data.
20-Jun-2012
5
Updated title on the cover page.
Minor text changes.
09-Sep-2013
6
– The part numbers STI26NM60N and STW26NM60N have been
moved to the separate datasheets
– Modified: VGS value in Table 2.
12-Dec-2016
7
The part number STF26NM60N has been moved to a separate
datasheet.
Modified Table 2: "Absolute maximum ratings", Table 3: "Thermal
data", Table 5: "On/off states", Table 6: "Dynamic" and Table 7:
"Switching times".
Modified Section 2.1: "Electrical characteristics (curves)".
Minor text changes.
5 Revision history
Table 12: Document revision history
Page 17
STB26NM60N, STP26NM60N
DocID15642 Rev 7
17/17
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