ST MICROELECTRONICS STP24N60DM2 Datasheet

STB24N60DM2, STP24N60DM2,

D(2, TAB)

G(1)

S(3)

AM01476v1

D2PAK

TO-220

TO-247

1

3

2

TAB

1

2

3

TAB

1

2

3

STW24N60DM2

N-channel 600 V, 0.175 Ω typ., 18 A FDmesh II Plus™ low Q

Power MOSFETs in D2PAK, TO-220 and TO-247 packages

Datasheet − production data

Features

Figure 1. Internal schematic diagram

@

V

Order codes

STB24N60DM2

STW24N60DM2

DS

T

650 V 0.20 Ω 18 ASTP24N60DM2

Jmax

• Extremely low gate charge and input
capacitance

• Lower R

x area vs previous generation

DS(on)

• Low gate input resistance

• 100% avalanche tested

• Zener-protected

• Extremely high dv/dt and avalanche

capabilities

R

DS(on)

max

g

I

D

Applications

• Switching applications

Description

These FDmesh II Plus™ low Qg Power MOSFETs
with intrinsic fast-recovery body diode are
produced using a new generation of MDmesh™
technology: MDmesh II Plus™ low Q
revolutionary Power MOSFETs associate a
vertical structure to the company's strip layout to
yield one of the world's lowest on-resistance and
gate charge. They are therefore suitable for the
most demanding high efficiency converters and
ideal for bridge topologies and ZVS phase-shift
converters.

Table 1. Device summary

Order codes Marking Package Packaging

STB24N60DM2

STP24N60DM2 TO-220

STW24N60DM2 TO-247

24N60DM2

2

PAK Tape and reel

D

g

Tube

. These

March 2014 DocID025499 Rev 3 1/21

This is information on a product in full production.

www.st.com

Contents STB24N60DM2, STP24N60DM2, STW24N60DM2

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18

6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20

2/21 DocID025499 Rev 3

STB24N60DM2, STP24N60DM2, STW24N60DM2 Electrical ratings

1 Electrical ratings

Table 2. Absolute maximum ratings

Symbol Parameter Value Unit

V

I

DM

P

dv/dt

dv/dt

T

1. Pulse width limited by safe operating area.

2. ISD ≤ 18 A, di/dt ≤ 400 A/μs; VDS

3. VDS ≤ 480 V

Gate-source voltage ± 25 V

GS

I

Drain current (continuous) at TC = 25 °C 18 A

D

I

Drain current (continuous) at TC = 100 °C 11 A

D

(1)

Drain current (pulsed) 72 A

Total dissipation at TC = 25 °C 150 W

TOT

(2)

Peak diode recovery voltage slope 40 V/ns

(3)

MOSFET dv/dt ruggedness 50 V/ns

Storage temperature

stg

T

Max. operating junction temperature

j

peak

< V

(BR)DSS

, VDD=400 V.

- 55 to 150 °C

Table 3. Thermal data

Value

Symbol Parameter

2

D

PAK TO-220 TO-247

Unit

R

thj-case

R

thj-pcb

R

thj-amb

1. When mounted on 1 inch² FR-4, 2 Oz copper board

Thermal resistance junction-case max 0.83 °C/W

Thermal resistance junction-pcb max

(1)

30 °C/W

Thermal resistance junction-ambient max 62.5 50 °C/W

T able 4. Avalanche characteristics

Symbol Parameter Value Unit

Avalanche current, repetitive or not

I

AR

repetitive (pulse width limited by T

E

Single pulse avalanche energy (starting

AS

T

=25°C, ID= IAR; VDD=50)

j

jmax

)

3.5 A

180 mJ

DocID025499 Rev 3 3/21

21

Electrical characteristics STB24N60DM2, STP24N60DM2, STW24N60DM2

2 Electrical characteristics

(TC = 25 °C unless otherwise specified)

Table 5. On /off states

Symbol Parameter Test conditions Min. Typ. Max. Unit

V

(BR)DSS

I

DSS

I

GSS

V

GS(th)

R

DS(on)

Drain-source
breakdown voltage

Zero gate voltage
drain current (VGS = 0)

Gate-body leakage
current (V

DS

= 0)

ID = 1 mA, VGS = 0 600 V

V

= 600 V 1.5 μA

DS

V

= 600 V, TC=125 °C 100 μA

DS

= ± 25 V ±10 μA

V

GS

Gate threshold voltage VDS = VGS, ID = 250 μA 345V

Static drain-source
on-resistance

= 10 V, ID = 9 A 0.175 0.200 Ω

V

GS

Table 6. Dynamic

Symbol Parameter Test conditions Min. Typ. Max. Unit

- 1055 - pF

pF

-2.4-

pF

C

oss eq.

C

C

C

Input capacitance

iss

= 100 V, f = 1 MHz,

Output capacitance - 56 -

oss

Reverse transfer

rss

V

DS

VGS = 0

capacitance

Equivalent output

(1)

capacitance

G

Intrinsic gate
resistance

R

= 0 to 480 V, VGS = 0 - 259 - pF

V

DS

f = 1 MHz, I

= 0 - 7 - Ω

D

Q

Q

Q

1. C

oss eq.

increases from 0 to 80% V

Total gate charge

g

Gate-source charge - 6 - nC

gs

Gate-drain charge - 12 - nC

gd

is defined as a constant equivalent capacitance giving the same charging time as C

DSS

VDD = 480 V, ID = 18 A,
VGS = 10 V

(see Figure 17)

Table 7. Switching times

Symbol Parameter Test conditions Min. Typ. Max. Unit

t

d(on)

t

d(off)

4/21 DocID025499 Rev 3

Turn-on delay time

= 300 V, ID = 9 A,

V

t

Rise time - 8.7 - ns

r

Turn-off delay time - 60 - ns

t

Fall time - 15 - ns

f

DD

RG = 4.7 Ω, V

(see Figure 16 and 21)

GS

= 10 V

-29-nC

when VDS

oss

-15-ns

STB24N60DM2, STP24N60DM2, STW24N60DM2 Electrical characteristics

Table 8. Source drain diode

Symbol Parameter Test conditions Min. Typ. Max. Unit

(1)

I

SD

I

SDM

V

SD

Q

I

RRM

Q

I

RRM

1. Limited by maximum junction temperature

2. Pulse width limited by safe operating area.

3. Pulsed: pulse duration = 300 μs, duty cycle 1.5%

Source-drain current - 18 A

(2)

Source-drain current (pulsed) - 72 A

(3)

Forward on voltage ISD = 18 A, VGS = 0 - 1.6 V

t

Reverse recovery time

rr

Reverse recovery charge - 956 nC

rr

I

= 18 A, di/dt = 100 A/μs

SD

V

= 60 V (see Figure 18)

DD

- 155 ns

Reverse recovery current - 12.5 A

t

Reverse recovery time

rr

Reverse recovery charge - 1450 nC

rr

Reverse recovery current - 13 A

I

= 18 A, di/dt = 100 A/μs

SD

VDD = 60 V, Tj = 150 °C

(see Figure 18)

- 200 ns

DocID025499 Rev 3 5/21

21

Electrical characteristics STB24N60DM2, STP24N60DM2, STW24N60DM2

I

D

10

1

0.1

0.1

1

100

V

DS

(V)

10

(A)

Operation in this area is

Limited by max R

DS(on)

10µs
100µs

1ms

10ms

Tj=150°C
Tc=25°C

Single
pulse

AM16164v1

I

D

10

1

0.1

0.1

1

100

V

DS

(V)

10

(A)

Operation in this area is

Limited by max R

DS(on)

10µs

100µs

1ms

10ms

Tj=150°C
Tc=25°C

Single
pulse

AM16165v1

I

D

30

20

10

0

0

10

V

DS

(V)

(A)

5

15

40

VGS= 4 V

VGS= 5 V

VGS= 7 V

VGS= 8, 9, 10 V

5

15

25

35

VGS= 6 V

20

AM16166v1

2.1 Electrical characteristics (curves)

Figure 2. Safe operating ar ea fo r D2PAK, TO-220 Figure 3. Thermal impedance D2PAK, TO-220

Figure 4. Safe operating area for TO-247 Figure 5. Thermal impedance for TO-247

Figure 6. Output characteristics Figure 7. Transfer characteristics

6/21 DocID025499 Rev 3

I

(A)

40

35

30

25

20

15

10

D

AM16167v1

VDS= 17 V

5

0

0

4

2

8

6

10

V

GS

(V)

STB24N60DM2, STP24N60DM2, STW24N60DM2 Electrical characteristics

VDS

V

GS

6

4

2

0

0

5

Q

g

(nC)

(V)

20

8

10

15

10

VDD=480 V

I

D

=18 A

25

300

200

100

0

400

500

V

DS

(V)

V

DS

12

30

35

AM16168v1

C

1000

100

10

1

0.1

10

V

DS

(V)

(pF)

1

100

Ciss

Coss

Crss

AM15467v1

V

GS(th)

0.9

0.8

0.7

0.6

-50

0

T

J

(°C)

(norm)

-25

1.0

75

25

50

100

ID = 250 µA

1.1

AM15473v1

Figure 8. Gate charge vs gate-source voltage Figure 9. Static drain-source on-resistance

R

DS(on)

0.186

0.184

0.182

0.180

0.178

0.176

0.174

0.172

0.170

0.168

(Ω)

VGS=10V

12

14

0

4

2

10

6

8

16

AM16169v1

D

(A)

I

Figure 10. Capacitance variations Figure 11. Output capacitance stored energy

Figure 12. Normalized gate threshold voltage vs

temperature

E

oss

AM15472v1

(µJ)

8

7

6

5

4

3

2

1

0

0

100

200

300

400

500

600

V

DS

(V)

Figure 13. Normalized on-resistance vs

temperature

T

J

(°C)

AM15464v1

R

DS(on)

(norm)

2.3

2.1

ID = 9 A

GS

= 10 V

V

1.9

1.7

1.5

1.3

1.1

0.9

0.7

0.5

-50

-25

25

0

50

75

100

DocID025499 Rev 3 7/21

21

Electrical characteristics STB24N60DM2, STP24N60DM2, STW24N60DM2

V

SD

0

4

I

SD

(A)

(V)

2

10

6

8

0

0.2

0.4

0.6

0.8

1

1.2
TJ=-50°C

TJ=150°C

TJ=25°C

12

14

16

1.4

AM15468v1

Figure 14. Source-drain diode forward

characteristics

Figure 15. Normalized V

V

(BR)DSS

(norm)

1.11

D

= 1mA

1.09

1.07

1.05

1.03

1.01

0.99

0.97

0.95

0.93

-50

-25

I

25

0

(BR)DSS

75

50

vs temperature

AM15466v1

T

J

100

(°C)

8/21 DocID025499 Rev 3

STB24N60DM2, STP24N60DM2, STW24N60DM2 Test circuits

AM01468v1

VGS

PW

VD

RG

RL

D.U.T.

2200

μF

3.3
μF

V

DD

AM01469v1

VDD

47kΩ

1kΩ

47kΩ

2.7kΩ

1kΩ

12V

V

i=20V=VGMAX

2200
μF

PW

IG=CONST

100Ω

100nF

D.U.T.

V

G

AM01470v1

A

D

D.U.T.

S

B

G

25

Ω

A

A

B

B

R

G

G

FAST
DIODE

D

S

L=100μH

μF

3.3

1000

μF

V

DD

$0Y

9%5'66

9''

9''

9'

,'0

,'

3 Test circuits

Figure 16. Switching times test circuit for

resistive load

Figure 18. Test circuit for inductive load

switching and diode recovery times

Figure 17. Gate charge test circuit

Figure 19. Unclamped inductive load test circuit

L

VD

2200

μF

3.3

μF

VDD

Figure 20. Unclamped inductive waveform Figure 21. Switching time waveform

ID

Vi

D.U.T.

Pw

AM01471v1

tdon

ton

tr

90%

tdoff

toff

tf

90%

10%

0

10%

VDS

90%

V

GS

10%

0

AM01473v1

DocID025499 Rev 3 9/21

21

Package mechanical data STB24N60DM2, STP24N60DM2, STW24N60DM2

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK

specifications, grade definitions and product status are available at: www.st.com.

ECOPACK

®

packages, depending on their level of environmental compliance. ECOPACK®

®

is an ST trademark.

10/21 DocID025499 Rev 3

STB24N60DM2, STP24N60DM2, STW24N60DM2 Package mechanical data

0079457_T

Figure 22. D²PAK (TO-263) drawing

DocID025499 Rev 3 11/21

21

Package mechanical data STB24N60DM2, STP24N60DM2, STW24N60DM2

Table 9. D²PAK (TO-263) mechanical data

mm

Dim.

Min. Typ. Max.

A4.40 4.60

A1 0.03 0.23

b0.70 0.93

b2 1.14 1.70

c0.45 0.60

c2 1.23 1.36

D8.95 9.35

D1 7.50

E 10 10.40

E1 8.50

e2.54

e1 4.88 5.28

H 15 15.85

J1 2.49 2.69

L2.29 2.79

L1 1.27 1.40

L2 1.30 1.75

R0.4

V2 0° 8°

12/21 DocID025499 Rev 3

STB24N60DM2, STP24N60DM2, STW24N60DM2 Package mechanical data

16.90

12.20

9.75

3.50

5.08

1.60

Footprint

Figure 23. D²PAK footprint

(a)

a. All dimension are in millimeters

DocID025499 Rev 3 13/21

21

Package mechanical data STB24N60DM2, STP24N60DM2, STW24N60DM2

BW\SH$B5HYB7

Figure 24. TO-220 type A drawing

14/21 DocID025499 Rev 3

STB24N60DM2, STP24N60DM2, STW24N60DM2 Package mechanical data

Table 10. TO-220 type A mechanical data

mm

Dim.

Min. Typ. Max.

A4.40 4.60

b0.61 0.88

b1 1.14 1.70

c0.48 0.70

D 15.25 15.75

D1 1.27

E 10 10.40

e2.40 2.70

e1 4.95 5.15

F1.23 1.32

H1 6.20 6.60

J1 2.40 2.72

L13 14

L1 3.50 3.93

L20 16.40

L30 28.90

∅

P3.75 3.85

Q2.65 2.95

DocID025499 Rev 3 15/21

21

Package mechanical data STB24N60DM2, STP24N60DM2, STW24N60DM2

0075325_G

Figure 25. TO-247 drawing

16/21 DocID025499 Rev 3

STB24N60DM2, STP24N60DM2, STW24N60DM2 Package mechanical data

Table 11. TO-247 mechanical data

mm.

Dim.

Min. Typ. Max.

A 4.85 5.15

A1 2.20 2.60

b1.0 1.40

b1 2.0 2.40

b2 3.0 3.40

c 0.40 0.80

D 19.85 20.15

E 15.45 15.75

e 5.30 5.45 5.60

L 14.20 14.80

L1 3.70 4.30

L2 18.50

∅P 3.55 3.65

∅R 4.50 5.50

S 5.30 5.50 5.70

DocID025499 Rev 3 17/21

21

Packaging mechanical data STB24N60DM2, STP24N60DM2, STW24N60DM2

P1

A0

D1

P0

F

W

E

D

B0

K0

T

User direction of feed

P2

10 pitches cumulative
tolerance on tape +/- 0.2 mm

User direction of feed

R

Bending radius

B1

For machine ref. only
including draft and
radii concentric around B0

AM08852v1

Top cover
tape

5 Packaging mechanical data

Figure 26. Tape

18/21 DocID025499 Rev 3

STB24N60DM2, STP24N60DM2, STW24N60DM2 Packaging mechanical data

A

D

B

Full radius

G measured at hub

C

N

REEL DIMENSIONS

40mm min.

Access hole

At sl ot location

T

Tape slot
in core for
tape start 25 mm min.
width

AM08851v2

Figure 27. Reel

Table 12. D²PAK (TO-263) tape and reel mechanical data

Tape Reel

mm

Dim.

Dim.

Min. Max. Min. Max.

A0 10.5 10.7 A 330

B0 15.7 15.9 B 1.5

D 1.5 1.6 C 12.8 13.2

D1 1.59 1.61 D 20.2

E 1.65 1.85 G 24.4 26.4

F 11.4 11.6 N 100

K0 4.8 5.0 T 30.4

P0 3.9 4.1

P1 11.9 12.1 Base qty 1000

P2 1.9 2.1 Bulk qty 1000

R50

T 0.25 0.35

W 23.7 24.3

mm

DocID025499 Rev 3 19/21

21

Revision history STB24N60DM2, STP24N60DM2, STW24N60DM2

6 Revision history

Table 13. Document revision history

Date Revision Changes

12-Nov-2013 1 First release.

– Document status promoted from preliminary data to production

data

– Modified: dv/dt (peak diode recovery voltage slope) value in

17-Jan-2014 2

Table 2

– Modified: I
– Modified: I

value in Table 4

AR

and V

DSS

GS(th)

– Minor text changes

03-Mar-2014 3

– Modified: I

– Added: note 1.: Limited by maximum junction temperature

value in Table 4

AR

– Minor text changes

values in Table 5

20/21 DocID025499 Rev 3

STB24N60DM2, STP24N60DM2, STW24N60DM2

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DocID025499 Rev 3 21/21

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