STMicroelectronics STP20N20, STF20N20 Technical data

STP20N20

STF20N20 - STD20N20

N-CHANNEL 200V - 0.10Ω - 18A TO-220/TO-220FP/DPAK LOW GATE CHARGE STripFET™ II MOSFET

Table 1: General Features

Figure 1: Package

TYPE	VDSS	RDS(on)	Id	PTOT
STD20N20	200 V	< 0.125 Ω	18 A	90 W
STF20N20	200 V	< 0.125 Ω	18 A	25 W
STP20N20	200 V	< 0.125 Ω	18 A	90 W

■TYPICAL RDS(on) = 0.10 Ω

■EXCEPTIONAL dv/dt CAPABILITY

■LOW GATE CHARGE

■100% AVALANCHE TESTED

DESCRIPTION

This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters.

APPLICATIONS

■HIGH CURRENT SWITCHING APPLICATIONS

■HIGH EFFICIENCY DC-DC CONVERTERS

■PRIMARY SIDE SWITCH

Table 2: Order Codes

3	3
2	2
1	1
TO-220	TO-220FP
	3
	1

DPAK

Figure 2: Internal Schematic Diagram

SALES TYPE	MARKING	PACKAGE	PACKAGING
STD20N20T4	D20N20	DPAK	TAPE & REEL
STF20N20	F20N20	TO-220FP	TUBE
STP20N20	P20N20	TO-220	TUBE

Rev. 3

January 2005

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Table 3: Absolute Maximum ratings

Symbol	Parameter	Value			Unit
		TO-220/DPAK		TO-220FP
VDS	Drain-source Voltage (VGS = 0)	200			V
VDGR	Drain-gate Voltage (RGS = 20 kΩ )	200			V
VGS	Gatesource Voltage	± 20			V
ID	Drain Current (continuous) at TC = 25°C	18			A
ID	Drain Current (continuous) at TC = 100°C	11			A
IDM ( )	Drain Current (pulsed)	72			A
PTOT	Total Dissipation at TC = 25°C	90		25	W
	Derating Factor	0.72		0.2	W/°C
dv/dt (1)	Peak Diode Recovery voltage slope	15			V/ns
Tj	Operating Junction Temperature	-50 to 150			°C
Tstg	Storage Temperature

( ) Pulse width limited by safe operating area

(1) ISD ≤ 18A, di/dt ≤ 400A/µs, VDD ≤ V(BR)DSS

Table 4: Thermal Data

		TO-220	DPAK	TO-220FP
Rthj-case	Thermal Resistance Junction-case Max	1.38	1.38	5	°C/W
Rthj-amb	Thermal Resistance Junction-ambient Max	62.5	50(#)	62.5	°C/W
Tl	Maximum Lead Temperature For Soldering		300		°C
	Purpose

(#) When mounted on 1inch² FR-4, 2 Oz copper board.

Table 5: Avalanche Characteristics

Symbol	Parameter	Max Value	Unit
IAR	Avalanche Current, Repetitive or Not-Repetitive	18	A
	(pulse width limited by Tj max)
EAS	Single Pulse Avalanche Energy	110	mJ
	(starting Tj = 25 °C, ID = IAR, VDD = 50 V)

ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)

Table 6: On/Off

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
V(BR)DSS	Drain-source	ID = 1 mA, VGS = 0	200			V
	Breakdown Voltage
IDSS	Zero Gate Voltage	VDS = Max Rating			1	µA
	Drain Current (VGS = 0)	VDS = Max Rating, TC = 125 °C			10	µA
IGSS	Gate-body Leakage	VGS = ± 20V			±100	nA
	Current (VDS = 0)
VGS(th)	Gate Threshold Voltage	VDS = VGS, ID = 250 µA	2	3	4	V
RDS(on)	Static Drain-source On	VGS = 10V, ID = 10 A		0.10	0.125	Ω
	Resistance

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ELECTRICAL CHARACTERISTICS (CONTINUED)

Table 7: Dynamic

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
gfs (1)	Forward Transconductance	VDS = 25 V, ID= 10 A		13		S
Ciss	Input Capacitance	VDS = 25V, f = 1 MHz, VGS = 0		940		pF
Coss	Output Capacitance			197		pF
Crss	Reverse Transfer			30		pF
	Capacitance
td(on)	Turn-on Delay Time	VDD = 100 V, ID = 10 A,		15		ns
tr	Rise Time	RG= 4.7 Ω VGS = 10 V		30		ns
td(off)	Turn-off Delay Time	(see Figure 17)		40		ns
tr	Fall Time			10		ns
Qg	Total Gate Charge	VDD = 160V, ID = 20 A,		28	39	nC
Qgs	Gate-Source Charge	VGS = 10V		5.6		nC
Qgd	Gate-Drain Charge	(see Figure 20)		14.5		nC

Table 8: Source Drain Diode

Symbol	Parameter	Test Conditions		Min.	Typ.	Max.	Unit
ISD	Source-drain Current					18	A
ISDM (2)	Source-drain Current (pulsed)					72	A
VSD (1)	Forward On Voltage	ISD = 20	A, VGS = 0			1.6	V
trr	Reverse Recovery Time	ISD = 20	A, di/dt = 100A/µs		155		ns
Qrr	Reverse Recovery Charge	VDD = 50V, Tj = 25°C			775		nC
IRRM	Reverse Recovery Current	(see Figure 18)			10		A
trr	Reverse Recovery Time	ISD = 20	A, di/dt = 100A/µs		183		ns
Qrr	Reverse Recovery Charge	VDD = 50V, Tj = 150°C			1061		nC
IRRM	Reverse Recovery Current	(see Figure 18)			11.6		A

(1)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

(2)Pulse width limited by safe operating area.

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Figure 3: Safe Operating Area For TO-220/

DPAK

Figure 4: Safe Operating Area For TO-220FP

Figure 5: Output Characteristics

Figure 6: Thermal Impedance For TO-220/

DPAK

Figure 7: Thermal Impedance For TO-220FP

Figure 8: Transfer Characteristics

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