STF18N65M5, STI18N65M5, STP18N65M5,
TO-220
TO-220FP
1
2
3
I²PAK
1
2
3
TO-247
STW18N65M5
N-channel 650 V, 0.198 Ω typ., 15 A MDmesh™ V Power MOSFET
in TO-220FP, I²PAK, TO-220 and TO-247 packages
Datasheet — production data
Features
@
R
Order code
V
DSS
T
Jmax
DS(on)
max
I
D
STF18N65M5
STI18N65M5
STP18N65M5
710 V < 0.22 Ω 15 A
STW18N65M5
■ Worldwide best R
■ Higher V
■ Excellent switching performance
■ 100% avalanche tested
rating and high dv/dt capability
DSS
DS(on)
* area
Applications
■ Switching applications
Description
These devices are N-channel MDmesh™ V
Power MOSFETs based on an innovative
proprietary vertical process technology, which is
combined with STMicroelectronics’ well-known
PowerMESH™ horizontal layout structure. The
resulting product has extremely low onresistance, which is unmatched among siliconbased Power MOSFETs, making it especially
suitable for applications which require superior
power density and outstanding efficiency.
Table 1. Device summary
TAB
3
2
1
TAB
3
2
1
Figure 1. Internal schematic diagram
$4!"
'
3
!-V
Order code Marking Package Packaging
STF18N65M5
TO-220FP
STI18N65M5 I²PAK
18N65M5
Tu be
STP18N65M5 TO-220
STW18N65M5 TO-247
July 2012 Doc ID 022879 Rev 3 1/19
This is information on a product in full production.
www.st.com
19
Contents STF18N65M5, STI18N65M5, STP18N65M5, STW18N65M5
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
2/19 Doc ID 022879 Rev 3
STF18N65M5, STI18N65M5, STP18N65M5, STW18N65M5 Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum ratings
Value
Symbol Parameter
I²PAK TO-220 TO-247 TO-220FP
Unit
V
I
DM
P
dv/dt
Gate-source voltage ± 25 V
GS
I
Drain current (continuous) at TC = 25 °C 15 15
D
I
Drain current (continuous) at TC = 100 °C 9.4 9.4
D
(1)
Drain current (pulsed) 60 60
Total dissipation at TC = 25 °C 110 25 W
TOT
(2)
Peak diode recovery voltage slope 15 V/ns
Insulation withstand voltage (RMS) from
V
T
1. Limited by maximum junction temperature.
2. ISD ≤ 15 A, di/dt ≤ 400 A/µs; V
all three leads to external heat sink
ISO
(t = 1 s; T
Storage temperature - 55 to 150 °C
stg
T
Max. operating junction temperature 150 °C
j
C = 25 °C)
DSPeak
< V
Table 3. Thermal data
Symbol Parameter
R
thj-case
R
thj-amb
Thermal resistance junction-case max 1.14 5 °C/W
Thermal resistance junction-ambient max 62.5 50 62.5 °C/W
(BR)DSS
, VDD = 400 V
I²PAK TO-220 TO-247 TO-220FP
Value
(1)
(1)
(1)
2500 V
Unit
A
A
A
Table 4. Avalanche characteristics
Symbol Parameter Value Unit
I
E
Avalanche current, repetetive or not repetetive
AR
(pulse width limited by T
jmax
)
Single pulse avalanche energy
AS
(starting T
= 25 °C, ID= IAR; VDD = 50 V)
J
4A
210 mJ
Doc ID 022879 Rev 3 3/19
Electrical characteristics STF18N65M5, STI18N65M5, STP18N65M5, STW18N65M5
2 Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 5. On /off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
Drain-source
breakdown voltage
Zero gate voltage
drain current (VGS = 0)
Gate-body leakage
current (VDS = 0)
ID = 1 mA, VGS = 0 650 V
V
= 650 V
DS
V
= 650 V, TC=125 °C
DS
1
100µAµA
VGS = ± 25 V ± 100 nA
Gate threshold voltage VDS = VGS, ID = 250 µA 3 4 5 V
Static drain-source
on-resistance
V
= 10 V, ID = 7.5 A 0.198 0.22 Ω
GS
Table 6 . D y namic
Symbol Parameter Test conditions Min. Typ. Max. Unit
Input capacitance
iss
Output capacitance
oss
Reverse transfer
rss
capacitance
Equivalent
(1)
capacitance time
related
Equivalent
(2)
capacitance energy
related
Intrinsic gate
G
resistance
V
= 100 V, f = 1 MHz,
DS
V
= 0
GS
1240
-
32
-
3.2
-99-pF
= 0 to 520 V, VGS = 0
V
DS
-30-pF
f = 1 MHz open drain - 3 - Ω
C
C
C
C
C
o(tr)
o(er)
R
pF
pF
pF
Q
Q
Q
1. Time related is defined as a constant equivalent capacitance giving the same charging time as C
V
DS
2. Energy related is defined as a constant equivalent capacitance giving the same stored energy as C
when VDS increases from 0 to 80% V
Total gate charge
g
Gate-source charge
gs
Gate-drain charge
gd
increases from 0 to 80% V
VDD = 520 V, ID = 7.5 A,
VGS = 10 V
(see Figure 20)
DSS
DSS
4/19 Doc ID 022879 Rev 3
31
-
8
14
-
oss
when
oss
nC
nC
nC
STF18N65M5, STI18N65M5, STP18N65M5, STW18N65M5 Electrical characteristics
Table 7. Switching times
Symbol Parameter Test conditions Min. Typ. Max Unit
t
d(V)
t
r(V)
t
t
c(off)
Voltage delay time
Voltage rise time
Current fall time
f(i)
Crossing time
VDD = 400 V, ID = 9.5 A,
RG = 4.7 Ω, V
GS
= 10 V
(see Figure 21 and
Figure 24)
36
7
9
-
11
Table 8. Source drain diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
I
SDM
V
SD
Q
I
RRM
Q
I
RRM
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Source-drain current
SD
(1)
Source-drain current (pulsed)
(2)
Forward on voltage ISD = 15 A, VGS = 0 - 1.5 V
t
Reverse recovery time
rr
Reverse recovery charge
rr
Reverse recovery current
t
Reverse recovery time
rr
Reverse recovery charge
rr
Reverse recovery current
ISD = 15 A, di/dt = 100 A/µs
V
DD
ISD = 15 A, di/dt = 100 A/µs
V
DD
(see Figure 24)
= 100 V (see Figure 24)
= 100 V, Tj = 150 °C
-
290
-
3.4
23.5
352
-
24
1560A
4
ns
ns
ns
ns
A
ns
µC
A
ns
µC
A
Doc ID 022879 Rev 3 5/19
Electrical characteristics STF18N65M5, STI18N65M5, STP18N65M5, STW18N65M5
I
D
10
1
0.1
0.1
1
100
V
DS
(V)
10
(A)
Operation in this area is
Limited by max R
DS(on)
10µs
100µs
1ms
10ms
Tj=150°C
Tc=25°C
Single
pulse
AM12487v1
I
D
10
1
0.1
0.01
0.1
1
100
V
DS
(V)
10
(A)
Operation in this area is
Limited by max R
DS(on)
10µs
100µs
1ms
10ms
Tj=150°C
Tc=25°C
Single
pulse
AM12488v1
I
D
10
1
0.1
0.1
1
100
V
DS
(V)
10
(A)
Operation in this area is
Limited by max R
DS(on)
10µs
100µs
1ms
10ms
Tj=150°C
Tc=25°C
Single
pulse
AM12489v1
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area for I²PAK and
Figure 4. Safe operating area TO220FP Figure 5. Thermal impedance for TO-220FP
TO-220
Figure 3. Thermal impedance for I²PAK and
TO-220
Figure 6. Safe operating area TO-247 Figure 7. Thermal impedance TO-247
6/19 Doc ID 022879 Rev 3
Loading...