ST MICROELECTRONICS STP18N65M5 Datasheet

STF18N65M5, STI18N65M5, STP18N65M5,

TO-220

TO-220FP

1

2

3

I²PAK

1

2

3

TO-247

STW18N65M5

N-channel 650 V, 0.198 Ω typ., 15 A MDmesh™ V Power MOSFET

in TO-220FP, I²PAK, TO-220 and TO-247 packages

Datasheet — production data

Features

@

R

Order code

V

DSS

T

Jmax

DS(on)

max

I

D

STF18N65M5

STI18N65M5

STP18N65M5

710 V < 0.22 Ω 15 A

STW18N65M5

■ Worldwide best R

■ Higher V

■ Excellent switching performance

■ 100% avalanche tested

rating and high dv/dt capability

DSS

DS(on)

* area

Applications

■ Switching applications

Description

These devices are N-channel MDmesh™ V
Power MOSFETs based on an innovative
proprietary vertical process technology, which is
combined with STMicroelectronics’ well-known
PowerMESH™ horizontal layout structure. The
resulting product has extremely low on­resistance, which is unmatched among silicon­based Power MOSFETs, making it especially
suitable for applications which require superior
power density and outstanding efficiency.

Table 1. Device summary

TAB

3

2

1

TAB

3

2

1

Figure 1. Internal schematic diagram

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Order code Marking Package Packaging

STF18N65M5

TO-220FP

STI18N65M5 I²PAK

18N65M5

Tu be

STP18N65M5 TO-220

STW18N65M5 TO-247

July 2012 Doc ID 022879 Rev 3 1/19

This is information on a product in full production.

www.st.com

19

Contents STF18N65M5, STI18N65M5, STP18N65M5, STW18N65M5

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18

2/19 Doc ID 022879 Rev 3

STF18N65M5, STI18N65M5, STP18N65M5, STW18N65M5 Electrical ratings

1 Electrical ratings

Table 2. Absolute maximum ratings

Value

Symbol Parameter

I²PAK TO-220 TO-247 TO-220FP

Unit

V

I

DM

P

dv/dt

Gate-source voltage ± 25 V

GS

I

Drain current (continuous) at TC = 25 °C 15 15

D

I

Drain current (continuous) at TC = 100 °C 9.4 9.4

D

(1)

Drain current (pulsed) 60 60

Total dissipation at TC = 25 °C 110 25 W

TOT

(2)

Peak diode recovery voltage slope 15 V/ns

Insulation withstand voltage (RMS) from

V

T

1. Limited by maximum junction temperature.

2. ISD ≤ 15 A, di/dt ≤ 400 A/µs; V

all three leads to external heat sink

ISO

(t = 1 s; T

Storage temperature - 55 to 150 °C

stg

T

Max. operating junction temperature 150 °C

j

C = 25 °C)

DSPeak

< V

Table 3. Thermal data

Symbol Parameter

R

thj-case

R

thj-amb

Thermal resistance junction-case max 1.14 5 °C/W

Thermal resistance junction-ambient max 62.5 50 62.5 °C/W

(BR)DSS

, VDD = 400 V

I²PAK TO-220 TO-247 TO-220FP

Value

(1)

(1)

(1)

2500 V

Unit

A

A

A

Table 4. Avalanche characteristics

Symbol Parameter Value Unit

I

E

Avalanche current, repetetive or not repetetive

AR

(pulse width limited by T

jmax

)

Single pulse avalanche energy

AS

(starting T

= 25 °C, ID= IAR; VDD = 50 V)

J

4A

210 mJ

Doc ID 022879 Rev 3 3/19

Electrical characteristics STF18N65M5, STI18N65M5, STP18N65M5, STW18N65M5

2 Electrical characteristics

(TC = 25 °C unless otherwise specified)

Table 5. On /off states

Symbol Parameter Test conditions Min. Typ. Max. Unit

V

(BR)DSS

I

DSS

I

GSS

V

GS(th)

R

DS(on)

Drain-source
breakdown voltage

Zero gate voltage
drain current (VGS = 0)

Gate-body leakage
current (VDS = 0)

ID = 1 mA, VGS = 0 650 V

V

= 650 V

DS

V

= 650 V, TC=125 °C

DS

1

100µAµA

VGS = ± 25 V ± 100 nA

Gate threshold voltage VDS = VGS, ID = 250 µA 3 4 5 V

Static drain-source
on-resistance

V

= 10 V, ID = 7.5 A 0.198 0.22 Ω

GS

Table 6 . D y namic

Symbol Parameter Test conditions Min. Typ. Max. Unit

Input capacitance

iss

Output capacitance

oss

Reverse transfer

rss

capacitance

Equivalent

(1)

capacitance time
related

Equivalent

(2)

capacitance energy
related

Intrinsic gate

G

resistance

V

= 100 V, f = 1 MHz,

DS

V

= 0

GS

1240

-

32

-

3.2

-99-pF

= 0 to 520 V, VGS = 0

V

DS

-30-pF

f = 1 MHz open drain - 3 - Ω

C

C

C

C

C

o(tr)

o(er)

R

pF
pF
pF

Q

Q

Q

1. Time related is defined as a constant equivalent capacitance giving the same charging time as C
V

DS

2. Energy related is defined as a constant equivalent capacitance giving the same stored energy as C
when VDS increases from 0 to 80% V

Total gate charge

g

Gate-source charge

gs

Gate-drain charge

gd

increases from 0 to 80% V

VDD = 520 V, ID = 7.5 A,
VGS = 10 V
(see Figure 20)

DSS

DSS

4/19 Doc ID 022879 Rev 3

31

-

8

14

-

oss

when

oss

nC
nC
nC

STF18N65M5, STI18N65M5, STP18N65M5, STW18N65M5 Electrical characteristics

Table 7. Switching times

Symbol Parameter Test conditions Min. Typ. Max Unit

t

d(V)

t

r(V)

t

t

c(off)

Voltage delay time
Voltage rise time
Current fall time

f(i)

Crossing time

VDD = 400 V, ID = 9.5 A,
RG = 4.7 Ω, V

GS

= 10 V

(see Figure 21 and

Figure 24)

36

7

­9

-

11

Table 8. Source drain diode

Symbol Parameter Test conditions Min. Typ. Max. Unit

I

I

SDM

V

SD

Q

I

RRM

Q

I

RRM

1. Pulse width limited by safe operating area.

2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Source-drain current

SD

(1)

Source-drain current (pulsed)

(2)

Forward on voltage ISD = 15 A, VGS = 0 - 1.5 V

t

Reverse recovery time

rr

Reverse recovery charge

rr

Reverse recovery current

t

Reverse recovery time

rr

Reverse recovery charge

rr

Reverse recovery current

ISD = 15 A, di/dt = 100 A/µs
V

DD

ISD = 15 A, di/dt = 100 A/µs
V

DD

(see Figure 24)

= 100 V (see Figure 24)

= 100 V, Tj = 150 °C

-

290

-

3.4

23.5

352

-

24

1560A

4

ns
ns
ns
ns

A

ns

µC

A

ns

µC

A

Doc ID 022879 Rev 3 5/19

Electrical characteristics STF18N65M5, STI18N65M5, STP18N65M5, STW18N65M5

I

D

10

1

0.1

0.1

1

100

V

DS

(V)

10

(A)

Operation in this area is

Limited by max R

DS(on)

10µs

100µs

1ms

10ms

Tj=150°C
Tc=25°C

Single
pulse

AM12487v1

I

D

10

1

0.1

0.01

0.1

1

100

V

DS

(V)

10

(A)

Operation in this area is

Limited by max R

DS(on)

10µs

100µs

1ms

10ms

Tj=150°C
Tc=25°C

Single
pulse

AM12488v1

I

D

10

1

0.1

0.1

1

100

V

DS

(V)

10

(A)

Operation in this area is

Limited by max R

DS(on)

10µs

100µs

1ms

10ms

Tj=150°C
Tc=25°C

Single
pulse

AM12489v1

2.1 Electrical characteristics (curves)

Figure 2. Safe operating area for I²PAK and

Figure 4. Safe operating area TO220FP Figure 5. Thermal impedance for TO-220FP

TO-220

Figure 3. Thermal impedance for I²PAK and

TO-220

Figure 6. Safe operating area TO-247 Figure 7. Thermal impedance TO-247

6/19 Doc ID 022879 Rev 3

STF18N65M5, STI18N65M5, STP18N65M5, STW18N65M5 Electrical characteristics

I

D

15

10

5

0

0

10

V

DS

(V)

20

(A)

5

15

20

25

VGS= 6 V

VGS= 7 V

VGS= 8 V

VGS= 9, 10 V

30

35

AM12472v1

V

GS

6

4

2

0

0

5

Q

g

(nC)

(V)

20

8

10

15

10

VDD=520V

I

D

=7.5A

300

200

100

0

400

500

V

DS

(V)

V

DS

25

30

12

AM12474v1

C

1000

100

10

1

0.1

10

V

DS

(V)

(pF)

1

10000

100

Ciss

Coss

Crss

AM12476v1

Figure 8. Output characteristics Figure 9. Transfer characteristics

I

(A)

35

30

25

20

15

10

D

VDS= 25 V

5

AM12486v1

0

3

Figure 10. Gate charge vs gate-source voltage Figure 11. Static drain-source on-resistance

R

DS(on)

5

4

7

6

9

8

V

GS

(V)

AM12475v1

(Ω)

0.24
VGS=10V

0.23

0.22

0.21

0.2

0.19

0.18

0.17

0.16

Figure 12. Capacitance variations Figure 13. Output capacitance stored energy

E

oss

2

0

6

8

10

4

12

14

I

D

(A)

AM12484v1

(µJ)

6

5

4

3

2

1

0

Doc ID 022879 Rev 3 7/19

0

200

400

600

V

DS

(V)

Electrical characteristics STF18N65M5, STI18N65M5, STP18N65M5, STW18N65M5

V

GS(th)

1.00

0.90

0.80

0.70

-50

0

T

J

(°C)

(norm)

-25

1.10

75

25

50

100

ID = 250 µA

VDS = V

GS

AM12471v1

V

SD

0

20

I

SD

(A)

(V)

10

50

30

40

0

0.2

0.4

0.6

0.8

1.0

1.2

TJ=-50°C

TJ=150°C

TJ=25°C

AM05461v1

E

0

0

20

R

G(Ω)

(μJ)

10

30

20

40

40

I

D=9.5A

V

DD=400V

Eon

Eoff

60

V

GS=10V

80

100

120

140

160

AM12485v1

Figure 14. Normalized gate threshold voltage

vs temperature

Figure 16. Drain-source diode forward

characteristics

Figure 15. Normalized on-resistance vs

temperature

R

DS(on)

(norm)

2.1

1.9

1.7

1.5

1.3

1.1

0.9

0.7

0.5

-50

Figure 17. Normalized B

V

DS

(norm)

1.08

1.06

1.04

VGS= 10V
ID= 17.5 A

-25

25

0

D

= 1mA

I

75

50

vs temperature

VDSS

100

T

J

AM12483v1

(°C)

AM10399v1

Figure 18. Switching losses vs gate resistance

(1)

1. Eon including reverse recovery of a SiC diode

8/19 Doc ID 022879 Rev 3

1.02

1.00

0.98

0.96

0.94

0.92

-50

-25

25

0

50

75

100

T

J

(°C)

STF18N65M5, STI18N65M5, STP18N65M5, STW18N65M5 Test circuits

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3 Test circuits

Figure 19. Switching times test circuit for

resistive load

Figure 21. Test circuit for inductive load

switching and diode recovery times

Figure 20. Gate charge test circuit

Figure 22. Unclamped inductive load test

circuit

Figure 23. Unclamped inductive waveform Figure 24. Switching time waveform

Id

90%Vds

Tdelay-off

-off

Vgs

90%Vgs

on

on

Vgs(I(t))

))

10%Vds

Vds

Doc ID 022879 Rev 3 9/19

Trise

Trise

Tcross -over

Concept waveform for Inductive Load Turn-off

Tfall

Tfall

-

90%Id

10%Id

AM05540v2

Package mechanical data STF18N65M5, STI18N65M5, STP18N65M5, STW18N65M5

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of

®

ECOPACK

packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com. ECOPACK
is an ST trademark.

Table 9. TO-220FP mechanical data

mm

Dim.

Min. Typ. Max.

A4.4 4.6

B2.5 2.7

D2.5 2.75

E 0.45 0.7

F0.75 1

F1 1.15 1.70

F2 1.15 1.70

G 4.95 5.2

G1 2.4 2.7

H10 10.4

L2 16

L3 28.6 30.6

L4 9.8 10.6

L5 2.9 3.6

L6 15.9 16.4

L7 9 9.3

Dia 3 3.2

10/19 Doc ID 022879 Rev 3

STF18N65M5, STI18N65M5, STP18N65M5, STW18N65M5 Package mechanical data

7012510_Rev_K_B

Figure 25. TO-220FP drawing

Doc ID 022879 Rev 3 11/19

Package mechanical data STF18N65M5, STI18N65M5, STP18N65M5, STW18N65M5

Table 10. I²PAK (TO-262) mechanical data

mm.

DIM.

min. typ max.

A 4.40 4.60

A1 2.40 2.72

b 0.61 0.88

b1 1.14 1.70

c 0.49 0.70

c2 1.23 1.32

D 8.95 9.35

e 2.40 2.70

e1 4.95 5.15

E10 10.40

L13 14

L1 3.50 3.93

L2 1.27 1.40

12/19 Doc ID 022879 Rev 3

STF18N65M5, STI18N65M5, STP18N65M5, STW18N65M5 Package mechanical data

0004982_Rev_H

Figure 26. I²PAK (TO-262) drawing

Doc ID 022879 Rev 3 13/19

Package mechanical data STF18N65M5, STI18N65M5, STP18N65M5, STW18N65M5

Table 11. TO-220 type A mechanical data

mm

Dim.

Min. Typ. Max.

A 4.40 4.60

b 0.61 0.88

b1 1.14 1.70

c 0.48 0.70

D 15.25 15.75

D1 1.27

E 10 10.40

e 2.40 2.70

e1 4.95 5.15

F 1.23 1.32

H1 6.20 6.60

J1 2.40 2.72

L13 14

L1 3.50 3.93

L20 16.40

L30 28.90

∅P 3.75 3.85

Q 2.65 2.95

14/19 Doc ID 022879 Rev 3

STF18N65M5, STI18N65M5, STP18N65M5, STW18N65M5 Package mechanical data

0015988_typeA_Rev_S

Figure 27. TO-220 type A drawing

Doc ID 022879 Rev 3 15/19

Package mechanical data STF18N65M5, STI18N65M5, STP18N65M5, STW18N65M5

Table 12. TO-247 mechanical data

mm.

Dim.

Min. Typ. Max.

A 4.85 5.15

A1 2.20 2.60

b1.0 1.40

b1 2.0 2.40

b2 3.0 3.40

c 0.40 0.80

D 19.85 20.15

E 15.45 15.75

e 5.30 5.45 5.60

L 14.20 14.80

L1 3.70 4.30

L2 18.50

∅P 3.55 3.65

∅R 4.50 5.50

S 5.30 5.50 5.70

16/19 Doc ID 022879 Rev 3

STF18N65M5, STI18N65M5, STP18N65M5, STW18N65M5 Package mechanical data

0075325_G

Figure 28. TO-247 drawing

Doc ID 022879 Rev 3 17/19

Revision history STF18N65M5, STI18N65M5, STP18N65M5, STW18N65M5

5 Revision history

Table 13. Document revision history

Date Revision Changes

01-Mar-2012 1 First release.

The part numbers STB18N65M5 and STD18N65M5 have been
moved to a separate datasheet.

11-Jul-2012 2

19-Jul-2012 3

The part numbers STI18N65M5 and STW18N65M5 in I²PAK and
TO-247 packages have been added.

Document status promoted from preliminary data to production data.
Added Section 2.1: Electrical characteristics (curves).

Updated Figure 8: Output characteristics, Figure 11: Static drain-

source on-resistance and Figure 14: Normalized gate threshold
voltage vs temperature.

18/19 Doc ID 022879 Rev 3

STF18N65M5, STI18N65M5, STP18N65M5, STW18N65M5

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Doc ID 022879 Rev 3 19/19