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STP16NF06L
1
3
1
3
STP16NF06LFP
N-CHANNEL 60V - 0.07 Ω - 16A TO-220/TO-220FP
STripFET™ II POWER MOSFET
TYPE
STP16NF06L
STP60NF06LFP
■ TYPICAL R
■ EXCEPTIONAL dv/dt CAPABILITY
■ LOW GATE CHARGE AT 100
■ LOW THRESHOLD DRIVE
V
DSS
60 V
60 V
(on) = 0.07Ω
DS
R
DS(on)
<0.09 Ω
<0.09 Ω
o
C
I
D
16 A
11 A
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectroni s unique "Single Feature Size™" stripbased process. The resu lting trans istor show s ex treme ly
high packing density for low on-resistance, rugged
avalanche characteristics and less critical alignment
steps therefore a remarkable manufacturing
reproducibility.
APPLICATIONS
■ MOTOR CONTROL, AUDIO AMPLIFIERS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SOLENOID AND RELAY DRIVERS
■ DC-DC & DC-AC CONVERTERS
■ AUTOMOTIVE ENVIRONMENT
2
TO-220 TO-220FP
INTERNAL SCHEMATIC DIAGRAM
2
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
STP16NF06L STP16NF06LFP
V
DS
V
DGR
V
GS
I
D
I
D
I
(•)
DM
P
tot
dv/dt
E
AS
V
ISO
T
stg
T
j
(•) Pulse width limited by safe operating area.
(*) Current Limited by package’s thermal resistance
.
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)
60 V
60 V
Gate- source Voltage ± 16 V
Drain Current (conti nuo us ) at TC = 25°C
Drain Current (conti nuo us ) at TC = 100°C
16 11(*) A
11 7.5(*) A
Drain Current (pulse d) 64 44(*) A
Total Dissipation at TC = 25°C
45 25 W
Derating Factor 0.3 0.17 W/°C
(1)
Peak Diode Recove ry vo ltag e slo pe 23 V/ns
(2)
Single Pulse Avalanche Energy 127 mJ
Insulation Withstand Voltage (DC) -------- 2500 V
Storage Temperature
Operating Junction Temperature
(1) ISD ≤ 16A, di/dt ≤ 210A/µs, VDD ≤ V
(2) Starting Tj = 25 oC, ID = 8A, VDD = 30V
-55 to 175 °C
(BR)DSS
, Tj ≤ T
JMAX.
1/9March 2004
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STP16NF06L/FP
THERMAL DATA
TO-220 TO-220FP
Rthj-case Thermal Resistance Junction-case Max 3.33 6 °C/W
Rthj-amb
T
Thermal Resistance Junction-ambient
Maximum Lead Temperature For Soldering Purpose
l
Max 62.5
300
°C/W
°C
ELECTRICAL CHARACTERISTICS (T
= 25 °C unless otherwise specified)
case
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
V
(BR)DSS
Drain-source
= 250 µA, VGS = 0
D
60 V
Breakdown Voltage
= Max Rating
V
DS
= Max Rating TC = 125°C
V
DS
= ± 16V
V
GS
1
10
±100 nA
ON
(1)
I
DSS
I
GSS
Zero Gate Voltage
Drain Current (V
GS
Gate-body Leakage
Current (V
DS
= 0)
= 0)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
Gate Threshold Voltage
Static Drain-source On
Resistance
V
= VGS ID = 250 µA
DS
V
= 5 V ID = 8 A
GS
= 10 V ID = 8 A
V
GS
12.5V
0.08
0.07
0.10
0.09
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(*)
g
fs
C
iss
C
oss
C
rss
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
> I
V
I
D
V
DS
=8 A
DS
x R
D(on)
DS(on)max,
= 25V, f = 1 MHz, VGS = 0
17 S
345
72
29
µA
µA
Ω
Ω
pF
pF
pF
2/9
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STP16NF06L/FP
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
t
d(on)
Q
Q
Q
t
r
g
gs
gd
Turn-on Delay Time
Rise Time
Total Ga te Char ge
Gate-Source Charg e
Gate-Drain Charge
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(off)
t
f
Turn-off Delay Time
Fall Time
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
V
SD
t
rr
Q
rr
I
RRM
(*)
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(
•)Pulse width limited by safe operating area.
Source-drain Curre nt
(•)
Source-drain Curre nt (pu lse d)
(*)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
= 30 V ID = 8 A
DD
=4.7 Ω VGS = 4.5 V
R
G
(Resistive Load, Figu re 3)
V
= 48 V ID = 16 A VGS= 5V
DD
V
= 30 V ID = 8 A
DD
=4.7Ω, V
R
G
GS
(Resistive Load, Figu re 3)
I
= 16 A VGS = 0
SD
I
= 16 A di/dt = 100A/µs
SD
= 16 V Tj = 150°C
V
DD
(see test circuit, Figure 5)
= 4.5 V
10
37
7.3
2.1
3.1
20
12.5
50
67.5
2.7
10 nC
16
64
1.3 V
ns
ns
nC
nC
ns
ns
A
A
ns
nC
A
Safe Operating Area for TO-220 Safe Operating Area for TO-220FP
3/9
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STP16NF06L/FP
Thermal Impedance Thermal Impedance for TO-220FP
Output Characteristics Transfer Characteristics
Transconductance Static Drain-source On Resistance
4/9
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STP16NF06L/FP
Gate Charge vs Gate-so urc e Vol tag e Capacitance Variations
Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/9
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STP16NF06L/FP
Fig. 1: Unclamped Inductive Load Test CircuitFig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For Resistive
Load
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
Fig. 4: Gate Charge test Circuit
6/9
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E
TO-220 MECHANICAL DATA
STP16NF06L/FP
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
D1 1.27 0.050
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151
mm inch
A
C
D
D1
L2
F1
L5
Dia.
G1
F
F2
L9
G
H2
L7
L6
L4
P011C
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STP16NF06L/FP
TO-220FP MECHANICAL DAT A
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.45 0.7 0.017 0.027
F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067
G 4.95 5.2 0.195 0.204
G1 2.4 2.7 0.094 0.106
H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 0.385 0.417
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366
Ø 3 3.2 0.118 0.126
mm inch
A
B
H
E
D
L3
L6
L7
¯
F1
F
G1
G
F2
123
L2
L4
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STP16NF06L/FP
I
s
o
d
b
ct
t
ot
a
nformation furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequence
f use of such information nor for any infrin gement of patents or other rights of third parties which may resul t from its use. No license is grant e
y implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subje
o change without notice. This publication supersed es and replaces all information previously supplied. STMicroelectronics products are n
uthorized for use as critical components in life support devices or systems without express written approval of ST Microelectronics.
The ST logo is registered trademark of STMicroelectronics
All other names are the property of their respective owners.
© 2004 STMicroelectronics - All Rights Reserved
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