ST MICROELECTRONICS STP16N65M5 Datasheet

N-channel 650 V, 0.270 Ω, 12 A MDmesh™ V Power MOSFET

3

Features

@

R

V

Type

DSS

T

Jmax

STD16N65M5 710 V < 0.299 Ω 12 A

STF16N65M5 710 V < 0.299 Ω 12 A

STP16N65M5 710 V < 0.299 Ω 12 A

STU16N65M5 710 V < 0.299 Ω 12 A

■ DPAK worldwide best R

■

Higher V

■ High dv/dt capability

■ Excellent switching performance

■ Easy to drive

■ 100% Avalanche tested

DSS

rating

DS(on)

DS(on)

max

STD16N65M5, STF16N65M5

STP16N65M5, STU16N65M5

DPAK, TO-220FP, TO-220, IPAK

I

D

IPAK

DPAK

Figure 1. Internal schematic diagram

2

1

2

1

TO-220

3

1

2

1

TO-220FP

3

3

Application

■ Switching applications

$

Description

MDmesh V is a revolutionary Power MOSFET
technology, which combines an innovative
proprietary vertical process with the well known
company’s PowerMESH™ horizontal layout. The
resulting product has an extremely low on­resistance, unmatched among silicon-based
Power MOSFETs, making it especially suited for
applications which require superior power density
and outstanding efficiencies.

Table 1. Device summary

Order codes Marking Package Packaging

STD16N65M5 16N65M5 DPAK Tape and reel

STF16N65M5 16N65M5 TO-220FP Tube

STP16N65M5 16N65M5 TO-220 Tube

STU16N65M5 16N65M5 IPAK Tube

'

3

!-V

February 2009 Rev 1 1/17

www.st.com

17

Contents STx16N65M5

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

2/17

STx16N65M5 Electrical ratings

1 Electrical ratings

Table 2. Absolute maximum ratings

(a)

Symbol Parameter

V

V

I

DM

P

I

E

dv/dt

Drain-source voltage (VGS = 0) 650 V

DS

Gate-source voltage 25 V

GS

Drain current (continuous) at TC = 25 °C 12 12

I

D

I

Drain current (continuous) at TC = 100 °C 7.3 7.3

D

(2)

Drain current (pulsed) 48 48

Total dissipation at TC = 25 °C 90 25 W

TOT

Avalanche current, repetitive or not-

AR

repetitive (pulse width limited by Tj max)

Single pulse avalanche energy

AS

(starting Tj = 25°C, ID = IAR, VDD = 50 V)

(3)

Peak diode recovery voltage slope 15 V/ns

Insulation withstand voltage (RMS) from all

V

T

1. Limited only by maximum temperature allowed

2. Pulse width limited by safe operating area

3. ISD ≤ 12 A, di/dt ≤ 400 A/µs, V

Table 3. Thermal data

three leads to external heat sink

ISO

(t = 1 s; T

Storage temperature - 55 to 50 °C

stg

T

Max. operating junction temperature 150 °C

j

C = 25 °C)

Peak

< V

(BR)DSS

Value

TO-220, IPAK,

DPAK

Unit

TO-220FP

(1)

(1)

(1)

A

A

A

4A

200 mJ

2500 V

Symbol Parameter

R

thj-case

R

thj-amb

R

thj-pcb

a. All data which refers solely to the TO-220FP package is preliminary

Thermal resistance junction-case max 1.38 5 °C/W

Thermal resistance junction-ambient max 100 62.5 °C/W

Thermal resistance junction-pcb max 50

Maximum lead temperature for soldering

T

l

purpose

Value

Unit

DPAK IPAK TO-220 TO-220FP

300 °C

3/17

Electrical characteristics STx16N65M5

2 Electrical characteristics

(TC = 25 °C unless otherwise specified)

Table 4. On /off states

Symbol Parameter Test conditions Min. Typ. Max. Unit

V

(BR)DSS

I

DSS

I

GSS

V

GS(th)

R

DS(on)

Table 5. Dynamic

Symbol Parameter Test conditions Min. Typ. Max. Unit

Drain-source
breakdown voltage

Zero gate voltage
drain current (V

GS

Gate-body leakage
current (V

DS

= 0)

= 0)

= 1 mA, VGS = 0 650 V

I

D

V

= Max rating

DS

= Max rating, TC=125 °C

V

DS

VGS = ± 20 V 100 nA

Gate threshold voltage VDS = VGS, ID = 250 µA 3 4 5 V

Static drain-source on
resistance

V

= 10 V, ID = 6 A 0.270 0.299 Ω

GS

(b)

1

100µAµA

C

C

C

C

o(tr)

Input capacitance

iss

Output capacitance

oss

Reverse transfer

rss

capacitance

Equivalent

(1)

capacitance time
related

Equivalent

(2)

C

o(er)

capacitance energy
related

R

Q
Q
Q

1. C

oss eq.

when VDS increases from 0 to 80% V

2. C

oss eq.

C

oss

Intrinsic gate

G

resistance

Total gate charge

g

Gate-source charge

gs

Gate-drain charge

gd

time related is defined as a constant equivalent capacitance giving the same charging time as C

energy related is defined as a constant equivalent capacitance giving the same stored energy as

when VDS increases from 0 to 80% V

= 100 V, f = 1 MHz,

V

DS

VGS = 0

1250

30

3

130 pF

= 0 to 520 V, VGS = 0

V

DS

40 pF

f = 1 MHz open drain 2 Ω

= 520 V, ID = 12 A,

V

DD

= 10 V

V

GS

(see Figure 16)

DSS

DSS

45
25
10

oss

pF
pF
pF

nC
nC
nC

b. All data which refers solely to the TO-220FP package is preliminary

4/17

STx16N65M5 Electrical characteristics

Table 6. Switching times

Symbol Parameter Test conditions Min. Typ. Max Unit

t

d(on)

t

d(off)

Turn-on delay time

t

Rise time

r

Turn-off-delay time

t

Fall time

f

= 400 V, ID = 8 A,

V

DD

= 4.7 Ω, V

R

G

(see Figure 17)

GS

= 10 V

25

9

30

7

Table 7. Source drain diode

Symbol Parameter Test conditions Min. Typ. Max. Unit

I

I

SDM

V

SD

Q

I

RRM

Q

I

RRM

1. Pulse width limited by safe operating area

2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Source-drain current

SD

(1)

Source-drain current (pulsed)

(2)

Forward on voltage ISD = 12 A, VGS = 0 1.5 V

t

Reverse recovery time

rr

Reverse recovery charge

rr

Reverse recovery current

t

Reverse recovery time

rr

Reverse recovery charge

rr

Reverse recovery current

ISD = 12 A, di/dt = 100 A/µs
V

DD

ISD = 12 A, di/dt = 100 A/µs
VDD = 100 V, Tj = 150 °C
(see Figure 20)

= 100 V (see Figure 20)

300

3.5
23

350

24

1248A

4

ns
ns
ns
ns

A

ns

nC

A

ns

nC

A

5/17

Electrical characteristics STx16N65M5

2.1 Electrical characteristics (curves)

Figure 2. Safe operating area for DPAK,

I

IPAK, TO-220

D

AM03177v1

Figure 3. Thermal impedance for DPAK,

IPAK, TO-220

(A)

10

DS(on)

10µs

100µs

Operation in this area is

1

Limited by max R

1ms

10ms

Tj=150°C

0.1
Tc=25°C

Sinlge
pulse

0.01

0.1

1

10

100

V

DS

(V)

Figure 4. Output characteristics Figure 5. Transfer characteristics

ID

(A)

V

GS=10V

20

7.5V

15

AM03178v1

ID

(A)

20

VDS=10V

15

AM03179v1

7V

10

15

6.5V

6V

DS(V)

V

5

0

0

5

10

10

0

5

5

0

10

15

20

GS(V)

V

Figure 6. Transconductance Figure 7. Static drain-source on resistance

GFS

(S)

8

7

6

J=-50°C

T

T

J=25°C

J=150°C

T

5

4

3

2

1

0

0

5

10

AM03180v1

D(A)

I

RDS(on)

(Ω)

0.3

0.25

0.2

0.15

0.1

AM03181v1

ID=6A

GS=10V

V

8

9

I

0

4

2

7

6

D(A)

6/17

STx16N65M5 Electrical characteristics

Figure 8. Output capacitance stored energy Figure 9. Capacitance variations

Eoss

(µJ)

AM03312v1

C

(pF)

7

6

5

10000

1000

4

3

2

100

10

1

0

0

100

200

300

400

500

600

V

DS(V)

1

0.1

1

10

100

V

Figure 10. Gate charge vs gate-source voltage Figure 11. Normalized on resistance vs

v

VGS

(V)

12

VDD=520V
V

GS=10V

I

D=12A

AM03182v1

10

8

6

4

R

(norm)

temperature

DS(on)

2.5

2.0

1.5

1.0

AM03183v1

Ciss

Coss

Crss

DS(V)

AM03185v1

2

0

0

20

40

Q

g(nC)

Figure 12. Normalized gate threshold voltage

VGS(th)
(norm)

vs temperature

1.10

1.00

0.90

0.80

0.70

0.60

-50

AM03184v1

T

0

50

100

J(°C)

0.5

0

-50

-25

25

0

Figure 13. Normalized B

BV

DSS

(norm)

1.08

1.06

1.04

1.02

1.00

0.98

0.96

0.94

-50

-25

25

0

75

50

VDSS

50

100

vs temperature

75

100

125

T

T

AM03187v1

J

(°C)

J

(°C)

7/17

Electrical characteristics STx16N65M5

Figure 14. Source-drain diode forward

characteristics

V

SD

(V)

1.0

0.9

0.8

J

T

0.7

0.6

0.5

0.4
0

=25°C

AM03186v1

J

=-25°C

T

TJ=150°C

I

SD

5

10

(A)

8/17

STx16N65M5 Test circuits

3 Test circuits

Figure 15. Switching times test circuit for

PW

resistive load

VGS

VD

RG

RL

D.U.T.

2200

µF

3.3
µF

AM01468v1

V

DD

Figure 17. Test circuit for inductive load

G

25

Ω

switching and diode recovery times

A

D

D.U. T.

S

B

R

FAST
DIODE

G

A

A

L=100µH

B

B

D

G

S

3.3

µF

1000

µF

V

DD

Figure 16. Gate charge test circuit

V

i=20V=VGMAX

PW

2200
µF

1kΩ

12V

IG=CONST

2.7kΩ

47kΩ

47kΩ

100Ω

100nF

D.U.T.

AM01469v1

Figure 18. Unclamped inductive load test

circuit

L

VD

ID

Vi

D.U. T.

2200

µF

3.3
µF

1kΩ

VDD

V

VDD

G

Pw

AM01470v1

Figure 19. Unclamped inductive waveform Figure 20. Switching time waveform

V(BR)DSS

VD

IDM

ID

VDD

VDD

AM01472v1

0

0

10%

tdon

ton

90%

toff

tr

10%

tdoff

VDS

90%

V

GS

AM01471v1

tf

90%

10%

AM01473v1

9/17

Package mechanical data STx16N65M5

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
specifications, grade definitions and product status are available at: www.st.com. ECOPACK
is an ST trademark.

®

packages, depending on their level of environmental compliance. ECOPACK®

10/17

STx16N65M5 Package mechanical data

TO-251 (IPAK) mechanical data

DIM.

A 2.20 2.40

A1 0.901.10

b 0.64 0.90

b2 0.95

b4 5.20 5.40

c 0.45 0.60

c2 0.48 0.60

D 6.00 6.20

E 6.40 6.60

e2.28

e1 4.40 4.60

H 16.10

L 9.00 9.40

(L1) 0.801.20

L2 0.80

V1

min. typ max.

mm.

10

o

0068771_H

11/17

Package mechanical data STx16N65M5

TO-252 (DPAK) mechanical data

DIM.

A 2.20 2.40

A1 0.901.10

A2 0.03 0.23

b 0.64 0.90

b4 5.20 5.40

c 0.45 0.60

c2 0.48 0.60

D 6.00 6.20

D1 5.10

E 6.40 6.60

E1 4.70

e2.28

e1 4.40 4.60

H 9.35 10.10

L1

L1 2.80

L2 0.80

L4 0.60 1

R0.20

V2 0

min. typ max.

o

mm.

o

8

12/17

0068772_G

STx16N65M5 Package mechanical data

TO-220FP mechanical data

Dim.

mm

.xaM.pyT.niM

6.44.4A

7.25.2B

57.25.2D

7.054.0E

157.0F

07.151.11F

5.151.12F

2.559.4G

7.24.21G

4.0101H

612L

6.036.823L

6.018.94L

6.39.25L

4.619.516L

3.997L

2.33aiD

L7

E

A

B

L5

D

F1

F2

F

G

G1

L4

7012510_Rev_J

Dia

L6

H

L2

L3

13/17

Package mechanical data STx16N65M5

TO-220 mechanical data

Dim

Min Typ Max Min Typ Max

mm inch

A 4.40 4.60 0.173 0.181

b 0.61 0.88 0.024 0.034

b1 1.14 1.70 0.044 0.066

c0.48 0.70 0.019 0.027

D 15.25 15.75 0.6 0.62

D1 1.27 0.050

E 10 10.40 0.393 0.409

e 2.40 2.70 0.094 0.106

e1 4.95 5.15 0.194 0.202

F1.23 1.32 0.048 0.051

H1 6.20 6.60 0.244 0.256

J1 2.40 2.72 0.094 0.107

L13 14 0.511 0.551

L1 3.50 3.93 0.137 0.154
L20 16.40 0.645
L3028.90 1.137

∅P 3.75 3.85 0.147 0.151

Q2.65 2.95 0.104 0.116

14/17

STx16N65M5 Packaging mechanical data

5 Packaging mechanical data

DPAK FOOTPRINT

All dimensions are in millimeters

TAPE AND REEL SHIPMENT

REEL MECHANICAL DATA

DIM.

A 330 12.992

B 1.5 0.059

C 12.8 13.2 0.504 0.520

D 20.2 0.795

G 16.4 18.4 0.645 0.724

N 50 1.968

T 22.4 0.881

mm inch

MIN. MAX. MIN. MAX.

TAPE MECHANICAL DATA

DIM.

A0 6.8 7 0.267 0.275

B0 10.4 10.6 0.409 0.417

B1 12.1 0.476

D 1.5 1.6 0.059 0.063

D1 1.5 0.059

E 1.65 1.85 0.065 0.073

F 7.4 7.6 0.291 0.299

K0 2.55 2.75 0.100 0.108

P0 3.9 4.1 0.153 0.161

P1 7.9 8.1 0.311 0.319

P2 1.9 2.1 0.075 0.082

R 40 1.574

W 15.7 16.3 0.618 0.641

mm inch

MIN. MAX. MIN. MAX.

BASE QTY BULK QTY

2500 2500

15/17

Revision history STx16N65M5

6 Revision history

Table 8. Document revision history

Date Revision Changes

12-Feb-2009 1 First release

16/17

STx16N65M5

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