N-channel 650 V, 0.270 Ω, 12 A MDmesh™ V Power MOSFET
3
Features
@
R
V
Type
DSS
T
Jmax
STD16N65M5 710 V < 0.299 Ω 12 A
STF16N65M5 710 V < 0.299 Ω 12 A
STP16N65M5 710 V < 0.299 Ω 12 A
STU16N65M5 710 V < 0.299 Ω 12 A
■ DPAK worldwide best R
■
Higher V
■ High dv/dt capability
■ Excellent switching performance
■ Easy to drive
■ 100% Avalanche tested
DSS
rating
DS(on)
DS(on)
max
STD16N65M5, STF16N65M5
STP16N65M5, STU16N65M5
DPAK, TO-220FP, TO-220, IPAK
I
D
IPAK
DPAK
Figure 1. Internal schematic diagram
2
1
2
1
TO-220
3
1
2
1
TO-220FP
3
3
Application
■ Switching applications
$
Description
MDmesh V is a revolutionary Power MOSFET
technology, which combines an innovative
proprietary vertical process with the well known
company’s PowerMESH™ horizontal layout. The
resulting product has an extremely low onresistance, unmatched among silicon-based
Power MOSFETs, making it especially suited for
applications which require superior power density
and outstanding efficiencies.
Table 1. Device summary
Order codes Marking Package Packaging
STD16N65M5 16N65M5 DPAK Tape and reel
STF16N65M5 16N65M5 TO-220FP Tube
STP16N65M5 16N65M5 TO-220 Tube
STU16N65M5 16N65M5 IPAK Tube
'
3
!-V
February 2009 Rev 1 1/17
www.st.com
17
Contents STx16N65M5
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
2/17
STx16N65M5 Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum ratings
(a)
Symbol Parameter
V
V
I
DM
P
I
E
dv/dt
Drain-source voltage (VGS = 0) 650 V
DS
Gate-source voltage 25 V
GS
Drain current (continuous) at TC = 25 °C 12 12
I
D
I
Drain current (continuous) at TC = 100 °C 7.3 7.3
D
(2)
Drain current (pulsed) 48 48
Total dissipation at TC = 25 °C 90 25 W
TOT
Avalanche current, repetitive or not-
AR
repetitive (pulse width limited by Tj max)
Single pulse avalanche energy
AS
(starting Tj = 25°C, ID = IAR, VDD = 50 V)
(3)
Peak diode recovery voltage slope 15 V/ns
Insulation withstand voltage (RMS) from all
V
T
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. ISD ≤ 12 A, di/dt ≤ 400 A/µs, V
Table 3. Thermal data
three leads to external heat sink
ISO
(t = 1 s; T
Storage temperature - 55 to 50 °C
stg
T
Max. operating junction temperature 150 °C
j
C = 25 °C)
Peak
< V
(BR)DSS
Value
TO-220, IPAK,
DPAK
Unit
TO-220FP
(1)
(1)
(1)
A
A
A
4A
200 mJ
2500 V
Symbol Parameter
R
thj-case
R
thj-amb
R
thj-pcb
a. All data which refers solely to the TO-220FP package is preliminary
Thermal resistance junction-case max 1.38 5 °C/W
Thermal resistance junction-ambient max 100 62.5 °C/W
Thermal resistance junction-pcb max 50
Maximum lead temperature for soldering
T
l
purpose
Value
Unit
DPAK IPAK TO-220 TO-220FP
300 °C
3/17
Electrical characteristics STx16N65M5
2 Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 4. On /off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
Table 5. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
Drain-source
breakdown voltage
Zero gate voltage
drain current (V
GS
Gate-body leakage
current (V
DS
= 0)
= 0)
= 1 mA, VGS = 0 650 V
I
D
V
= Max rating
DS
= Max rating, TC=125 °C
V
DS
VGS = ± 20 V 100 nA
Gate threshold voltage VDS = VGS, ID = 250 µA 3 4 5 V
Static drain-source on
resistance
V
= 10 V, ID = 6 A 0.270 0.299 Ω
GS
(b)
1
100µAµA
C
C
C
C
o(tr)
Input capacitance
iss
Output capacitance
oss
Reverse transfer
rss
capacitance
Equivalent
(1)
capacitance time
related
Equivalent
(2)
C
o(er)
capacitance energy
related
R
Q
Q
Q
1. C
oss eq.
when VDS increases from 0 to 80% V
2. C
oss eq.
C
oss
Intrinsic gate
G
resistance
Total gate charge
g
Gate-source charge
gs
Gate-drain charge
gd
time related is defined as a constant equivalent capacitance giving the same charging time as C
energy related is defined as a constant equivalent capacitance giving the same stored energy as
when VDS increases from 0 to 80% V
= 100 V, f = 1 MHz,
V
DS
VGS = 0
1250
30
3
130 pF
= 0 to 520 V, VGS = 0
V
DS
40 pF
f = 1 MHz open drain 2 Ω
= 520 V, ID = 12 A,
V
DD
= 10 V
V
GS
(see Figure 16)
DSS
DSS
45
25
10
oss
pF
pF
pF
nC
nC
nC
b. All data which refers solely to the TO-220FP package is preliminary
4/17
STx16N65M5 Electrical characteristics
Table 6. Switching times
Symbol Parameter Test conditions Min. Typ. Max Unit
t
d(on)
t
d(off)
Turn-on delay time
t
Rise time
r
Turn-off-delay time
t
Fall time
f
= 400 V, ID = 8 A,
V
DD
= 4.7 Ω, V
R
G
(see Figure 17)
GS
= 10 V
25
9
30
7
Table 7. Source drain diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
I
SDM
V
SD
Q
I
RRM
Q
I
RRM
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Source-drain current
SD
(1)
Source-drain current (pulsed)
(2)
Forward on voltage ISD = 12 A, VGS = 0 1.5 V
t
Reverse recovery time
rr
Reverse recovery charge
rr
Reverse recovery current
t
Reverse recovery time
rr
Reverse recovery charge
rr
Reverse recovery current
ISD = 12 A, di/dt = 100 A/µs
V
DD
ISD = 12 A, di/dt = 100 A/µs
VDD = 100 V, Tj = 150 °C
(see Figure 20)
= 100 V (see Figure 20)
300
3.5
23
350
24
1248A
4
ns
ns
ns
ns
A
ns
nC
A
ns
nC
A
5/17
Electrical characteristics STx16N65M5
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area for DPAK,
I
IPAK, TO-220
D
AM03177v1
Figure 3. Thermal impedance for DPAK,
IPAK, TO-220
(A)
10
DS(on)
10µs
100µs
Operation in this area is
1
Limited by max R
1ms
10ms
Tj=150°C
0.1
Tc=25°C
Sinlge
pulse
0.01
0.1
1
10
100
V
DS
(V)
Figure 4. Output characteristics Figure 5. Transfer characteristics
ID
(A)
V
GS=10V
20
7.5V
15
AM03178v1
ID
(A)
20
VDS=10V
15
AM03179v1
7V
10
15
6.5V
6V
DS(V)
V
5
0
0
5
10
10
0
5
5
0
10
15
20
GS(V)
V
Figure 6. Transconductance Figure 7. Static drain-source on resistance
GFS
(S)
8
7
6
J=-50°C
T
T
J=25°C
J=150°C
T
5
4
3
2
1
0
0
5
10
AM03180v1
D(A)
I
RDS(on)
(Ω)
0.3
0.25
0.2
0.15
0.1
AM03181v1
ID=6A
GS=10V
V
8
9
I
0
4
2
7
6
D(A)
6/17
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