STP15NK50Z/FP - STB15NK50Z
3
STB15NK50Z-1 - STW15NK50Z
N-channel 500V - 0.30Ω - 14A TO-220/FP/D2PAK/I2PA K/ TO -2 4 7
Zener-protected SuperMESH™ Power MOSFET
General features
Type V
STP15NK50Z 500V <0.34Ω 14A 160 W
STP15NK50ZFP 500V <0.34Ω 14A 40 W
STB15NK50Z 500V <0.34Ω 14A 160W
STB15NK50Z-1 500V <0.34Ω 14A 160W
STW15NK50Z 500V <0.34Ω 14A 160W
DSS
R
DS(on)ID
Pw
TO-220
3
2
1
TO-220FP
TO-247
2
1
■ Extremely high dv/dt capability
■ 100% avalanche tested
■ Gate charge minimized
■ Very low intrinsic capacitances
■ Very good manufacturing repeatibility
Description
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt
capability for the most demanding applications.
Such series complements ST full range of high
voltage MOSFETs including revolutionary
MDmesh™ products.
Applications
■ Switching application
3
2
2
I
1
PAK
2
D
PAK
Internal schematic diagram
3
1
Order codes
Part number Marking Package Packaging
STP15NK50Z P15NK50Z TO-220 Tube
STP15NK50ZFP P15NK50ZFP TO-220FP Tube
2
STB15NK50ZT4 B15NK50Z D
STB15NK50Z B15NK50Z D
STB15NK50Z-1 B15NK50Z I
STW15NK50Z W15NK50Z TO-247 Tube
January 2007 Rev 4 1/19
PAK Tape & reel
2
PAK Tube
2
PA K Tu be
www.st.com
19
Contents STP15NK50Z - STP15NK50ZFP - STB15NK50Z - STB15NK50Z-1 - STW15NK50Z
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
2/19
STP15NK50Z - STP15NK50ZFP - STB15NK50Z - STB15NK50Z-1 - STW15NK50Z Electrical ratings
1 Electrical ratings
Table 1. Absolute maximum ratings
Val ue
Symbol Parameter
Drain-source voltage (VGS = 0) 500 V
DS
Drain-gate voltage (RGS = 20KΩ) 500 V
Gate-source voltage ± 30 V
GS
Drain current (continuous) at TC =
D
25°C
Drain current (continuous) at
D
TC=100°C
(2)
Drain current (pulsed) 56 56
Total dissipation at TC = 25°C 160 40 W
V
I
P
V
DGR
V
I
I
DM
TOT
TO-220/D
2
I
2
PAK
PAK /T O- 24 7
14 14
8.8 8.8
TO-220FP
(1)
(1)
(1)
Derating Factor 1.28 0.32 W/°C
I
GS
Gate-source current (DC) ± 20 mA
Vesd(G-S) G-S ESD (HBM C=100pF, R=1.5kΩ) 4000 KV
(3)
dv/dt
Peak diode recovery voltage slope 4.5 V/ns
Insulation withstand voltage (RMS)
V
ISO
from all three leads to external heat
-- 2500 V
sink (t=1s;TC=25°C)
T
T
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. ISD ≤14A, di/dt ≤200A/µs,VDD ≤ V
Operating junction temperature
J
Storage temperature
stg
(BR)DSS
, Tj ≤ T
JMAX
-50 to 150°C °C
Unit
A
A
A
Table 2. Thermal data
Symbol Parameter
R
thj-case
Rthj-pcb
Thermal resistance junction-case
Max
(1)
Thermal resistance junction-pcb max 60 °C/W
Val ue
TO-220
2
I
PAK
2
PAK TO-220FP TO-247
D
0.78 3.1 0.78 °C/W
Unit
3/19
Electrical ratings STP15NK50Z - STP15NK50ZFP - STB15NK50Z - STB15NK50Z-1 - STW15NK50Z
Table 2. Thermal data
R
thj-a
T
1. When mounted on minimum foot-print
Thermal resistance junction-ambient
max
Maximum lead temperature for
l
soldering purpose
62.5 50 °C/W
300 °C
Table 3. Avalanche characteristics
Symbol Parameter Value Unit
I
AR
E
AS
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj Max)
Single pulse avalanche energy
(starting Tj=25°C, Id=I
, VDD=50V)
AR
14 A
300 mJ
Table 4. Gate-source zener diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
(1)
BV
GSO
1. The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
Gate-source breakdown voltage
Igs=±1mA
(Open Drain)
30 V
4/19
STP15NK50Z - STP15NK50ZFP - STB15NK50Z - STB15NK50Z-1 - STW15NK50Z Electrical charac-
2 Electrical characteristics
(T
=25°C unless otherwise specified)
CASE
Table 5. On/off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
Drain-source breakdown
voltage
Zero gate voltage drain
current (VGS = 0)
Gate body leakage current
= 0)
(V
DS
Gate threshold voltage
Static drain-source on
resistance
= 1mA, VGS= 0
I
D
V
= Max rating,
DS
V
= Max rating @125°C
DS
= ±20V
V
GS
= VGS, ID = 100µA
V
DS
VGS= 10V, ID= 7A
500 V
1
50
±10 µA
33.754.5 V
0.30 0.34 Ω
Table 6. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
(1)
g
fs
C
C
C
C
oss eq
Q
Q
Q
t
d(on)
t
d(off)
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
2. C
inceases from 0 to 80% V
Forward transconductance
Input capacitance
iss
Output capacitance
oss
Reverse transfer
rss
capacitance
(2)
Equivalent output
.
capacitance
g
Total gate charge
Gate-source charge
gs
Gate-drain charge
gd
Turn-on delay time
t
Rise time
r
Turn-off delay time
Fall time
t
f
is defined as a constant equivalent capacitance giving the same charging time as C
oss eq.
DSS
V
=15V, ID = 7A
DS
=25V, f=1 MHz, VGS=0
V
DS
VGS=0, V
=400V, ID = 14A
V
DD
=10V
V
GS
=250 V, ID=7A,
V
DD
=4.7Ω, VGS=10V
R
G
=0V to 400V
DS
(see Figure 18)
12 S
2260
264
64
150 pF
76
106 nC
15
40
20
23
62
15
when VDS
oss
µA
µA
pF
pF
pF
nC
nC
ns
ns
ns
ns
5/19
Electrical characteristics STP15NK50Z - STP15NK50ZFP - STB15NK50Z - STB15NK50Z-1 -
Table 7. Source drain diode
Symbol Parameter Test conditions Min Typ. Max Unit
I
SD
I
SDM
V
SD
t
Q
I
RRM
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Source-drain current 14 A
(1)
Source-drain current (pulsed) 56 A
(2)
Forward on voltage
rr
Reverse recovery time
Reverse recovery charge
rr
Reverse recovery current
I
=14A, VGS=0
SD
=14A,
I
SD
di/dt = 100A/µs,
V
=29V, Tj=150°C
DD
428
4.2
20
1.6 V
ns
µC
A
6/19
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