ST MICROELECTRONICS STP150N10F7 Datasheet

STI150N10F7,

$0Y

'7$%

*

6

I PAK

2

TO-220

1

2

3

TA B

1

2

3

TAB

STP150N10F7

N-channel 100 V, 0.0036 Ω typ., 110 A, STripFET™ F7

2

Power MOSFETs in I

Features

PAK and TO-220 packages

Datasheet − production data

Figure 1. Internal schematic diagram

Order codes V

STI150N10F7

STP150N10F7

DSRDS(on)maxID

100 V 0.0042 Ω 110 A 250 W

• Among the lowest R

on the market

DS(on)

P

TOT

• Excellent figure of merit (FoM)

• Low Crss/Ciss ratio for EMI immunity

• High avalanche ruggedness

Applications

• Switching applications

Description

These N-channel Power MOSFETs utilize STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficien t switching.

Table 1. Device summary

Order codes Marking Package Packaging

STI150N10F7

STP150N10F7 TO-220

August 2014 DocID024552 Rev 4 1/15

This is information on a product in full production.

150N10F7

2

I

PAK

Tube

www.st.com

Contents STI150N10F7, STP150N10F 7

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

2/15 DocID024552 Rev 4

STI150N10F7, STP150N10F 7 Electrical ratings

1 Electrical ratings

Table 2. Absolute maximum ratings

Symbol Parameter Value Unit

V

DS

V

GS

I

D

I

D

I

DM

P

TOT

E

AS

T

stg

1. Pulse width is limited by safe operating area

2. Starting Tj=25 °C, ID=30 A, VDD=50 V

Drain-source voltage 100 V Gate- source voltage ±20 V Drain current (continuous) at TC = 25 °C 110 A Drain current (continuous) at TC = 100 °C 110 A

(1)

Drain current (pulsed) 440 A Total dissipation at TC = 25 °C 250 W

(2)

Single pulse avalanche energy 495 mJ Operating junction temperature

J

-55 to 175

Storage temperature °C

Table 3. Thermal data

Symbol Parameter Value Unit

R

thj-case

R

thj-amb

Thermal resistance jun ction-case max 0.6 °C/W Thermal resistance jun cti on- amb ie nt max 62.5 °C/W

°C

DocID024552 Rev 4 3/15

15

Electrical characteristics STI150N10F7, STP150N10F7

2 Electrical characteristics

(TC = 25 °C unless otherwise specified)

Table 4. On /off states

Symbol Parameter Test conditions Min. Typ. Max. Unit

V

(BR)DSS

I

DSS

I

GSS

V

GS(th)

R

DS(on)

Drain-source breakdown voltage

Zero gate voltage drain current

Gate-body leakage current

VGS = 0, ID = 250 µA 100 V

V

= 0, V

GS

V

= 0,

GS

V

= 100 V, TC=125 °C

DS

= 100 V 1 µA

DS

100 µA

VDS = 0, VGS = +20 V 100 nA

Gate threshold voltage VDS = VGS, ID = 250 µA 2.5 4.5 V Stat ic d rain-s ource on-

resistance

V

= 10 V, ID = 55 A 0.0036 0.0042 Ω

GS

Table 5. Dynamic

Symbol Parameter Test conditions Min. Typ. Max. Unit

C

Input capacitance

iss

Output capacitance -

oss

Reverse transfer

rss

VDS = 50 V, f = 1 MHz, VGS = 0

capacitance

Q Q Q

Total gate charge

g

Gate-source charge - 47 - nC

gs

Gate-drain charge - 26 - nC

gd

VDD = 50 V, ID = 110 A, VGS = 10 V (see Figure 14)

-8115-pF 1510

-

67

-pF

-117-nC

Table 6. Switching times

Symbol Parameter Test conditions Min. Typ. Max. Unit

t

d(on)

t

d(off)

4/15 DocID024552 Rev 4

Turn-on delay time

= 50 V, ID = 55 A,

V

t

Rise time - 57 - ns

r

Turn-off delay time - 72 - ns

t

Fall time - 33 - ns

f

DD

R

= 4.7 Ω, V

G

(see Figure 13)

GS

-33-ns

= 10 V

STI150N10F7, STP150N10F 7 Electrical ch ara cter ist ics

Table 7. Source drain diode

Symbol Parameter Test conditions Min. Typ. Max. Unit

I

SD

I

SDM

V

SD

t

Q

I

RRM

1. Pulse width limited by safe operating area

2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%.

Source-drain current - 110 A

(1)

Source-drain current (pulsed) - 440 A

(2)

Forward on voltage ISD = 110 A, VGS = 0 - 1.2 V Reverse recovery time

rr

Reverse recovery charge - 165 nC

rr

Reverse recovery current - 4.7 A

ISD = 110 A, di/dt = 100 A/µs VDD = 80 V, TJ=150 °C

(see Figure 15)

-70 ns

DocID024552 Rev 4 5/15

15

Electrical characteristics STI150N10F7, STP150N10F7

I

D

10

1

0.1

1

V

DS

(V)

10

(A)

Operation in this area is

Limited by max R

DS(on)

10ms

1ms

100µs

0.1

Tj=175°C Tc=25°C

Single pulse

100

AM18051v1

Single pulse

δ=0.5

0.05

0.02

0.01

0.1

0.2

K

10

t

p(s)

-4

10

-3

10

-1

10

-5

10

-2

10

-2

10

-1

10

0

c

AM18052v1

I

D

250

150

50

0

2

V

DS

(V)

4

(A)

6

350

400

5V

6V

VGS=10V

100

200

300

7V

8V

8

AM18042v1

V

GS

6

4

2

0

40

Q

g

(nC)

(V)

120

8

80

10

VDD=50V

I

D

=110A

12

AM18044v1

2.1 Electrical characteristics (curves)

Figure 2. Safe operating area Figure 3. Thermal impedance

Figure 4. Output characteristics Figure 5. Transfer characteristics

(A)

300

250

200

I

D

AM18043v1

VDS=4V

150

100

50

0

Figure 6. Gate charge vs gate-source voltage Figure 7. Static drain-source on-resistance

R

DS(on)

Ω)

(m

2

4

VGS=10V

6

3.62

3.61

3.60

3.59

3.58

3.57

3.56

3.55 20

40

60

0

80

6/15 DocID024552 Rev 4

8

V

GS

(V)

AM18054v1

D

(A)

I

100

STI150N10F7, STP150N10F 7 Electrical ch ara cter ist ics

C

3000

2000

1000

0

40

V

DS

(V)

(pF)

20

60

Ciss

Coss Crss

80

100

4000

6000

7000

8000

5000

AM18046v1

R

DS(on)

1.8

1.2

0.8

0.4 T

J

(°C)

(norm)

0.6

1

1.4

1.6

2

-75

25

75

-25

125

AM18048v1

ID=55A V

GS

=10V

V

SD

0

40

I

SD

(A)

(V)

20

100

60

80

0.3

0.4

0.5

0.6

TJ=-55°C

TJ=175°C

TJ=25°C

0.7

1

0.8

0.9

AM18055v1

Figure 8. Capacitance variations Figure 9. Normalized gate threshold voltage vs

V

GS(th)

(norm)

1.1

1

0.9

0.8

0.7

0.6

0.5

0.4

-75

temperature

-25

25

I

D

=250µA

75

125

AM18047v1

J

(°C)

T

Figure 10. Normalized on-resistance vs

temperature

Figure 12. Source-drain diode forward

characteristics

Figure 11. Normalized V

V

(BR)DDS

(norm)

1.04

1.03

1.02

1.01

1

0.99

0.98

0.97

0.96

-75

-25

25

(BR)DSS

ID=1mA

75

vs temperature

AM18049v1

J

(°C)

125

T

DocID024552 Rev 4 7/15

15

Test circuits STI150N10F7, STP150N10F7

AM01468v1

VGS

PW

VD

RG

RL

D.U.T.

2200

μF

3.3 μF

V

DD

AM01469v1

VDD

47kΩ

1kΩ

47kΩ

2.7kΩ

1kΩ

12V

V

i=20V=VGMAX

2200 μF

PW

IG=CONST

100Ω

100nF

D.U.T.

V

G

AM01470v1

A

D

D.U.T.

S

B

G

25

Ω

A

B

R

G

FAST DIODE

D

S

L=100μH

μF

3.3

1000

μF

V

DD

AM01472v1

V(BR)DSS

VDD

VD

IDM

ID

3 Test circuits

Figure 13. Switching times test circuit for

resistive load

Figure 15. Test circuit for inductive load

switching and diode recovery times

Figure 14. Gate charge test circuit

Figure 16. Unclamped inductive load test circuit

L

VD

2200

μF

3.3

μF

VDD

Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform

8/15 DocID024552 Rev 4

ID

Vi

D.U.T.

Pw

AM01471v1

tdon

ton

tr

90%

tdoff

toff

tf

90%

10%

0

10%

VDS

90%

V

GS

10%

0

AM01473v1

STI150N10F7, STP150N10F7 Package mechanical data

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of

®

ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK

packages, depending on their level of environmental compliance. ECOPACK®

®

is an ST trademark.

DocID024552 Rev 4 9/15

15

Package mechanical data STI150N10F7, STP150N10F7

0004982_Rev_H

Figure 19. I²PAK (TO-262) drawing

10/15 DocID024552 Rev 4

STI150N10F7, STP150N10F7 Package mechanical data

Table 8. I²PAK (TO-262) mechanical data

mm.

DIM.

min. typ max.

A 4.40 4.60

A1 2.40 2.72

b 0.61 0.88

b1 1.14 1.70

c 0.49 0.70

c2 1.23 1.32

D 8.95 9.35

e 2.40 2.70

e1 4.95 5.15

E10 10.40

L13 14 L1 3.50 3.93 L2 1.27 1.40

DocID024552 Rev 4 11/15

15

Package mechanical data STI150N10F7, STP150N10F7

BW\SH$B5HYB7

Figure 20. TO-220 type A drawing

12/15 DocID024552 Rev 4

STI150N10F7, STP150N10F7 Package mechanical data

Table 9. TO-220 type A mechanical data

mm

Dim.

Min. Typ. Max.

A4.40 4.60 b0.61 0.88

b1 1.14 1.70

c0.48 0.70

D 15.25 15.75

D1 1.27

E 10 10.40 e2.40 2.70

e1 4.95 5.15

F1.23 1.32

H1 6.20 6.60

J1 2.40 2.72

L13 14

L1 3.50 3.93 L20 16.40 L30 28.90

∅

P3.75 3.85

Q2.65 2.95

DocID024552 Rev 4 13/15

15

Revision history STI150N10F7, STP150N10F7

5 Revision history

Table 10. Document revision history

Date Revision Changes

16-Apr-2013 1 First release.

– The part number STH150N10F7-2 has been moved to a separate

datasheet

– Added: I

2

PAK package – Modified: Figure1 – Modified: ID and IDM values in Table 2

22-Jan-2014 2

– Modified: R – Modified: R

value in Table 3

thj-case

values in Table 4

DS(on)

– Modified: VSD, ID and the entire typical values in Table 5, 6 and 7 – Updated: Figure 13, 14, 15 and 16 – Updated: Section 4: Package mechanical data – Added: Section 2.1: Electrical characteristics (curves) – Minor text changes

– Datasheet status promoted from preliminary data to production

24-Feb-2014 3

data – Modified: Figure10 – Minor text changes

– Updated title, features and description in cover page.

20-Aug-2014

– Added E

parameter in Table 2: Absolute maximum ratings.

AS

– Minor text changes

14/15 DocID024552 Rev 4

STI150N10F7, STP150N10F 7

IMPORTANT NOTICE – PLEASE READ CAREFULLY

STMicroelectronics NV and it s subsidiaries (“ST”) reserve th e right to make changes, corrections, enhancements, modifications, and improvements to ST produc ts and /or to this document at any time witho ut notice. Purchasers should obt ain the lat est relevan t info rmation on ST products before placing orders. ST products are sold pursuant to ST’ s terms and conditions of sale in pla ce at the time of order acknowledgement.

Purchasers are solely r espon si ble for t he cho ic e, s elect ion, a nd use of ST produc ts and ST assume s no l iabil ity f or app lication as sist ance or the design of Purchasers’ products.

No license, express or implied , to any intellectual proper ty right is granted by ST herein.

Resale of ST products with provis ions different from the information set forth herein sha ll void any warranty granted by ST for such product.

ST and the ST logo are trademarks of ST. All other product or service names are the property of their respectiv e owners.

Information in this document supers edes and replaces information previously supplied in any prior versions of this document.

DocID024552 Rev 4 15/15

15

ST MICROELECTRONICS STP150N10F7 Datasheet

Specifications and Main Features

Frequently Asked Questions

User Manual

Figure 1. Internal schematic diagram

Table 1. Device summary

1 Electrical ratings

Table 2. Absolute maximum ratings

Table 3. Thermal data

2 Electrical characteristics

Table 4. On /off states

Table 5. Dynamic

Table 6. Switching times

Table 7. Source drain diode

2.1 Electrical characteristics (curves)

Figure 2. Safe operating area Figure 3. Thermal impedance

Figure 4. Output characteristics Figure 5. Transfer characteristics

Figure 6. Gate charge vs gate-source voltage Figure 7. Static drain-source on-resistance

Figure 8. Capacitance variations Figure 9. Normalized gate threshold voltage vs

3 Test circuits

Figure 14. Gate charge test circuit

Figure 16. Unclamped inductive load test circuit

Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform

4 Package mechanical data

Figure 19. I²PAK (TO-262) drawing

Table 8. I²PAK (TO-262) mechanical data

Figure 20. TO-220 type A drawing

Table 9. TO-220 type A mechanical data

5 Revision history

Table 10. Document revision history