ST MICROELECTRONICS STP150N10F7 Datasheet
STI150N10F7,
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6
I PAK
2
TO-220
1
2
3
TA B
1
2
3
TAB
STP150N10F7
N-channel 100 V, 0.0036 Ω typ., 110 A, STripFET™ F7
2
Power MOSFETs in I
Features
PAK and TO-220 packages
Datasheet − production data
Figure 1. Internal schematic diagram
Order codes V
STI150N10F7
STP150N10F7
DSRDS(on)maxID
100 V 0.0042 Ω 110 A 250 W
• Among the lowest R
on the market
DS(on)
P
TOT
• Excellent figure of merit (FoM)
• Low Crss/Ciss ratio for EMI immunity
• High avalanche ruggedness
Applications
• Switching applications
Description
These N-channel Power MOSFETs utilize
STripFET™ F7 technology with an enhanced
trench gate structure that results in very low onstate resistance, while also reducing internal
capacitance and gate charge for faster and more
efficien t switching.
Table 1. Device summary
Order codes Marking Package Packaging
STI150N10F7
STP150N10F7 TO-220
August 2014 DocID024552 Rev 4 1/15
This is information on a product in full production.
150N10F7
2
I
PAK
Tube
www.st.com
Contents STI150N10F7, STP150N10F 7
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
2/15 DocID024552 Rev 4
STI150N10F7, STP150N10F 7 Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
V
DS
V
GS
I
D
I
D
I
DM
P
TOT
E
AS
T
T
stg
1. Pulse width is limited by safe operating area
2. Starting Tj=25 °C, ID=30 A, VDD=50 V
Drain-source voltage 100 V
Gate- source voltage ±20 V
Drain current (continuous) at TC = 25 °C 110 A
Drain current (continuous) at TC = 100 °C 110 A
(1)
Drain current (pulsed) 440 A
Total dissipation at TC = 25 °C 250 W
(2)
Single pulse avalanche energy 495 mJ
Operating junction temperature
J
-55 to 175
Storage temperature °C
Table 3. Thermal data
Symbol Parameter Value Unit
R
thj-case
R
thj-amb
Thermal resistance jun ction-case max 0.6 °C/W
Thermal resistance jun cti on- amb ie nt max 62.5 °C/W
°C
DocID024552 Rev 4 3/15
15
Electrical characteristics STI150N10F7, STP150N10F7
2 Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 4. On /off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
Drain-source
breakdown voltage
Zero gate voltage
drain current
Gate-body leakage
current
VGS = 0, ID = 250 µA 100 V
V
= 0, V
GS
V
= 0,
GS
V
= 100 V, TC=125 °C
DS
= 100 V 1 µA
DS
100 µA
VDS = 0, VGS = +20 V 100 nA
Gate threshold voltage VDS = VGS, ID = 250 µA 2.5 4.5 V
Stat ic d rain-s ource on-
resistance
V
= 10 V, ID = 55 A 0.0036 0.0042 Ω
GS
Table 5. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
C
C
C
Input capacitance
iss
Output capacitance -
oss
Reverse transfer
rss
VDS = 50 V, f = 1 MHz,
VGS = 0
capacitance
Q
Q
Q
Total gate charge
g
Gate-source charge - 47 - nC
gs
Gate-drain charge - 26 - nC
gd
VDD = 50 V, ID = 110 A,
VGS = 10 V
(see Figure 14)
-8115-pF
1510
-
67
-pF
-pF
-117-nC
Table 6. Switching times
Symbol Parameter Test conditions Min. Typ. Max. Unit
t
d(on)
t
d(off)
4/15 DocID024552 Rev 4
Turn-on delay time
= 50 V, ID = 55 A,
V
t
Rise time - 57 - ns
r
Turn-off delay time - 72 - ns
t
Fall time - 33 - ns
f
DD
R
= 4.7 Ω, V
G
(see Figure 13)
GS
-33-ns
= 10 V
STI150N10F7, STP150N10F 7 Electrical ch ara cter ist ics
Table 7. Source drain diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
SD
I
SDM
V
SD
t
Q
I
RRM
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%.
Source-drain current - 110 A
(1)
Source-drain current (pulsed) - 440 A
(2)
Forward on voltage ISD = 110 A, VGS = 0 - 1.2 V
Reverse recovery time
rr
Reverse recovery charge - 165 nC
rr
Reverse recovery current - 4.7 A
ISD = 110 A, di/dt = 100 A/µs
VDD = 80 V, TJ=150 °C
(see Figure 15)
-70 ns
DocID024552 Rev 4 5/15
15
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