STP14NK50Z - STP14NK50ZFP
3
STB14NK50Z-STB14NK50Z-1-STW14NK50Z
N-channel 500V - 0.34Ω - 14A TO-220/FP/D2PAK/I2PA K/ TO -2 4 7
Zener-protected SuperMESH
General features
Type V
STP14NK50Z 500V <0.38Ω 14A 150W
STP14NK50ZFP 500V <0.38Ω 14A 35W
STB14NK50Z 500V <0.38Ω 14A 150W
STB14NK50Z-1 500V <0.38Ω 14A 150W
STW14NK50Z 500V <0.38Ω 14A 150W
DSS
R
DS(on)ID
Pw
1
TO-220
TM
Power MOSFET
3
2
TO-220FP
TO-247
2
1
■ Extremely high dv/dt capability
■ 100% avalanche tested
■ Gate charge minimized
■ Very low intrinsic capacitances
■ Very good manufacturing repeatibility
Description
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt
capability for the most demanding applications.
Such series complements ST full range of high
voltage MOSFETs including revolutionary
MDmesh™ products.
Applications
■ Switching application
3
2
2
I
1
PAK
2
D
PAK
Internal schematic diagram
3
1
Order codes
Part number Marking Package Packaging
STP14NK50Z P14NK50Z TO-220 Tube
STP14NK50ZFP P14NK50ZFP TO-220FP Tube
2
STB14NK50ZT4 B14NK50Z D
STB14NK50Z-1 B14NK50Z I
STW14NK50Z W14NK50Z TO-247 Tube
July 2006 Rev 3 1/19
PAK Tape & reel
2
PA K Tu be
www.st.com
19
Contents STP14NK50Z - STP14NK50ZFP - STB14NK50Z - STB14NK50Z-1 - STW14NK50Z
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
2/19
STP14NK50Z - STP14NK50ZFP - STB14NK50Z - STB14NK50Z-1 - STW14NK50Z Electrical ratings
1 Electrical ratings
Table 1. Absolute maximum ratings
Val ue
Symbol Parameter
Drain-source voltage (VGS = 0) 500 V
DS
Drain-gate voltage (RGS = 20KΩ)500V
Gate-source voltage ± 30 V
GS
Drain current (continuous)
D
at T
= 25°C
C
Drain current (continuous)
D
(2)
=100°C
at T
C
Drain current (pulsed) 48 48
Total dissipation at TC = 25°C 150 35 150 W
V
I
P
V
DGR
V
I
I
DM
TOT
TO-220
I2PA K/ D2PAK
14 14
7.6 7.6
TO-220FP TO-247
(1)
(1)
(1)
14 A
7.6 A
48 A
Derating factor 1.20 0.28 1.20 W/°C
Vesd(G-S) G-S ESD (HBM C=100pF, R=1.5kΩ) 4000 KV
(3)
dv/dt
V
ISO
T
T
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. ISD ≤13A, di/dt ≤200A/µs,VDD ≤ V
Peak diode recovery voltage slope 4.5 V/ns
Insulation withstand voltage (DC) -- 2500 V
Operating junction temperature
J
Storage temperature
stg
(BR)DSS
, Tj ≤ T
JMAX
-55 to 150 °C
Unit
Table 2. Thermal data
Symbol Parameter
R
thj-case
Rthj-pcb
R
thj-a
T
1. When mounted on minimum footprint
Thermal resistance junction-case Max 0.83 3.6 0.83
Thermal resistance junction-pcb Max
(1)
Thermal resistance junction-ambient
Max
Maximum lead temperature for
l
soldering purpose
TO-220
2
I
PAK
Val ue
D2PAK TO-220FP TO-247
60
62.5 50
300 °C
Unit
°C/
W
°C/
W
°C/
W
3/19
Electrical ratings STP14NK50Z - STP14NK50ZFP - STB14NK50Z - STB14NK50Z-1 - STW14NK50Z
Table 3. Avalanche characteristics
Symbol Parameter Value Unit
I
AR
E
AS
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj Max)
Single pulse avalanche energy
(starting Tj=25°C, Id=Iar, Vdd=50V)
12 A
400 mJ
Table 4. Gate-source zener diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
BV
GSO
Gate-source breakdown voltage
Igs=±1mA
(Open Drain)
30 V
1.1 Protection features og gate-to-source zener diodes
The built-in back-to-back Zener diodes have specifically been designed to enhance not only
the device’s ESD capability, but also to make them safely absorb possible voltage transients
that may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrity. These integrated Zener diodes thus avoid the usage of external components.
4/19
STP14NK50Z - STP14NK50ZFP - STB14NK50Z - STB14NK50Z-1 - STW14NK50Z Electrical charac-
2 Electrical characteristics
(T
=25°C unless otherwise specified)
CASE
Table 5. On/off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
Drain-source breakdown
voltage
Zero gate voltage drain
current (VGS = 0)
Gate body leakage current
(VDS = 0)
= 1mA, VGS= 0 500 V
I
D
= Max rating,
V
DS
= Max rating, TC
V
DS
=125°C
V
= ±20V ±10 nA
GS
1
50
Gate threshold voltage VDS= VGS, ID = 100µA 3 3.75 4.5 V
Static drain-source on
resistance
= 10V, ID= 6A 0.34 0.38 Ω
V
GS
Table 6. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
(1)
g
fs
C
C
C
C
oss eq
Q
Q
Q
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
2. C
inceases from 0 to 80% V
Forward transconductance
Input capacitance
iss
Output capacitance
oss
Reverse transfer
rss
capacitance
(2)
Equivalent output
.
capacitance
g
Total gate charge
Gate-source charge
gs
Gate-drain charge
gd
is defined as a constant equivalent capacitance giving the same charging time as C
oss eq.
DSS
=8V, ID = 6A
V
DS
V
=25V, f=1 MHz, VGS=0
DS
VGS=0, V
=0V to 400V
DS
VDD=400V, ID = 12A
=10V
V
GS
12 S
2000
238
55
150 pF
69
92 nC
12
31
when VDS
oss
µA
µA
pF
pF
pF
nC
nC
Table 7. Switching times
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
=250 V, ID=6A,
t
d(on)
Turn-on delay time
t
Rise time
r
DD
=4.7Ω, VGS=10V
R
G
(see Figure 19)
24
16
ns
ns
5/19
Electrical characteristics STP14NK50Z - STP14NK50ZFP - STB14NK50Z - STB14NK50Z-1 -
Table 7. Switching times
=250V, ID=6A,
V
t
d(off)
t
t
r(Voff)
t
t
Turn-off delay time
Fall time
f
Off-voltage rise time
Fall time
f
Cross-over time
c
DD
R
=4.7Ω, VGS=10V
G
(see Figure 19)
=400 V, ID=12A,
V
DD
=4.7Ω, VGS=10V
R
G
(see Figure 21)
54
12
9.5
9
20
ns
ns
ns
ns
ns
Table 8. Source drain diode
Symbol Parameter Test conditions Min Typ. Max Unit
I
SD
I
SDM
V
SD
t
Q
I
RRM
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Source-drain current 12 A
(1)
Source-drain current (pulsed) 48 A
(2)
Forward on voltage
rr
Reverse recovery time
Reverse recovery charge
rr
Reverse recovery current
I
=12A, VGS=0
SD
=12A,
I
SD
di/dt = 100A/µs,
V
=35V, Tj=150°C
DD
(see Figure 21)
470
3.1
13.2
1.6 V
ns
µC
A
6/19
Loading...