ST MICROELECTRONICS STP13N80K5 Datasheet

STB13N80K5, STF13N80K5,

TO-220

1

2

3

TAB

1

2

3

TO-220FP

1

3

TAB

D2PAK

1

2

3

TO-247

D(2, TAB)

G(1)

S(3)

AM01476v1

STP13N80K5, STW13N80K5

N-channel 800 V, 0.37 Ω typ., 12 A SuperMESH™ 5 Power

MOSFETs in D²PAK, TO-220FP, TO-220 and TO-247 packages

Datasheet - production data

Features

Figure 1. Internal schematic diagram

Order codes V

STB13N80K5

STF13N80K5 35 W

STP13N80K5

STW13N80K5

DS

800 V 0.45 Ω 12 A

R

DS(on)

I

P

D

TOT

190 W

190 W

• Worldwide best FOM (figure of merit)

• Ultra low gate charge

• 100% avalanche tested

• Zener-protected

Applications

• Switching applications

Description

These devices are N-channel Zener-protected
Power MOSFETs realized in SuperMESH™ 5, a
revolutionary avalanche-rugged very high voltage
Power MOSFET technology based on an
innovative proprietary vertical structure. The
result is a drastic reduction in on-resistance and
ultra low gate charge for applications which
require superior power density and high
efficiency.

Table 1. Device summary

Order codes Marking Packages Packaging

STB13N80K5

STF13N80K5 TO-220FP

STW13N80K5 TO-247

June 2014 DocID024348 Rev 4 1/24

This is information on a product in full production.

13N80K5

D²PAK Tape and reel

TubeSTP13N80K5 TO-220

www.st.com

24

Contents STB13N80K5, STF13N80K5, STP 13N8 0K5, STW 13N8 0K5

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

4.1 D2PAK, STB13N80K5 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

4.2 TO-220FP, STF13N80K5 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

4.3 TO-220, STP13N80K5 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17

4.4 TO-247, STW13N80K5 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19

5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21

6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23

2/24 DocID024348 Rev 4

STB13N80K5, STF13N80K5, STP13N80K5, STW13N80K5 Electrical ratings

1 Electrical ratings

Table 2. Absolute maximum ratings

Value

Symbol Parameter

D²PAK, T O-220,

TO-247

TO-220FP

Unit

Gate-source voltage ± 30 V

Drain current (continuous) at TC = 25 °C 12 12

Drain current (continuous) at TC = 100 °C 7.6 7.6

(2)

Drain current (pulsed) 48 48

Total dissipation at TC = 25 °C 190 35 W

I

DM

P

V

GS

I

D

I

D

TOT

Max current during repetitive or single

I

AR

E

AS

pulse avalanche
(pulse width limited by T

jmax

Single pulse avalanche energy
(starting TJ = 25 °C, ID=IAS, VDD= 50 V)

Insulation withstand voltage (RMS) from

V

iso

dv/dt

dv/dt

T

T

stg

1. Limited by package.

2. Pulse width limited by safe operating area.

3. ISD ≤ 12 A, di/dt ≤ 100 A/μs, V

4. VDS ≤ 640 V

all three leads to external heat sink
(t=1 s; T

(3)

Peak diode recovery voltage slope 4.5 V/ns

(4)

MOSFET dv/dt ruggedness 50 V/ns

Operating junction temperature

j

=25 °C)

C

Storage temperature

≤ V

Peak

)

(BR)DSS

(1)

(1)

(1)

A

A

A

4A

148 mJ

2500 V

-55 to 150 °C

Table 3. Thermal data

Symbol Parameter

R

thj-case

thj-amb

R

thj-pcb

1. When mounted on 1inch² FR-4 board, 2 oz Cu.

Thermal resistance junction-case max 0.66 3.57

Thermal resistance junction-amb max 62.5 50

(1)

Thermal resistance junction-pcb max 30

DocID024348 Rev 4 3/24

Value

Unit

D²PAK TO-220 TO-220FP TO-247

°C/WR

Electrical characteristics STB13N80K5, STF13N80K5, STP13N80K5, STW13N80K5

2 Electrical characteristics

(T

= 25 °C unless otherwise specified).

CASE

T a ble 4. On/off states

Symbol Parameter T est cond ition s Min. T yp . Max. Unit

V

(BR)DSS

V

R

I

DSS

I

GSS

GS(th)

DS(on)

Drain-source breakdown
voltage

Zero gate voltage drain
current

VGS= 0, ID = 1 mA 800 V

V

= 0, V

GS

V

= 0, V

GS

Tc=125 °C

Gate body leakage current VDS = 0, V

Gate threshold voltage V

Static drain-source
on-resistance

= VGS, ID = 100 μA345V

DS

= 10 V, ID= 6 A 0.37 0.45 Ω

V

GS

= 800 V 1 μA

DS

= 800 V,

DS

= ± 20 V ±10 μA

GS

50 μA

Table 5. Dynamic

Symbol Parameter Test conditions Min. Typ. Max. Unit

C

C

C

Input capacitance

iss

Output capacitance - 50 - pF

oss

Reverse transfer

rss

capacitance

=100 V, f=1 MHz, VGS=0

V

DS

-870- pF

-2-pF

o(tr)

related

Equivalent capacitance time

(1)

C

VGS = 0, VDS = 0 to 640 V

o(er)

R

Q

Q

Q

1. Time related is defined as a constant equivalent capacitance giving the same charging time as C
V

2. Energy related is defined as a constant equivalent capacitance giving the same stored energy as C
when VDS increases from 0 to 80% V

energy related

Intrinsic gate resistance f = 1MHz, ID=0 - 5 - Ω

G

Total gate charge

g

Gate-source charge - 7 - nC

gs

Gate-drain charge - 18 - nC

gd

increases from 0 to 80% V

DS

DSS

V

DD

V

GS

(see Figure 22)

DSS

= 640 V, ID = 12 A
=10 V

Equivalent capacitance

(2)

C

4/24 DocID024348 Rev 4

-110 - pF

-43-pF

-29-nC

when

oss

oss

STB13N80K5, STF13N80K5, STP13N80K5, STW13N80K5 Electrical characteristics

Table 6. Switching times

Symbol Parameter Test conditions Min. Typ. Max. Unit

t

d(on)

t

d(off)

Turn-on delay time

= 400 V, ID = 6A,

V

t

Rise time - 16 - ns

r

Turn-off delay time - 42 - ns

t

Fall time - 16 - ns

f

DD

R

=4.7 Ω, VGS=10 V

G

(see Figure 24)

-16-ns

T a ble 7. Source drain diode

Symbol Parameter Test conditions Min. Typ. Max. Unit

I

SD

I

SDM

V

SD

t

Q

I

RRM

t

Q

I

RRM

1. Pulsed: pulse duration = 300μs, duty cycle 1.5%

Source-drain current - 14 A

Source-drain current (pulsed) - 56 A

(1)

Forward on voltage VGS=0, ISD= 12 A - 1.5 V

Reverse recovery time

rr

Reverse recovery charge - 5.7 μC

rr

Reverse recovery current - 28 A

Reverse recovery time ISD= 12 A,VDD= 60 V

rr

Reverse recovery charge - 7.9 μC

rr

Reverse recovery current - 26 A

I

= 12 A, VDD= 60 V

SD

di/dt = 100 A/μs,

(see Figure 23)

di/dt=100 A/μs,
Tj=150 °C

(see Figure 23)

- 406 ns

- 600 ns

Table 8. Gate-source Zener diode

Symbol Parameter Test conditions Min. Typ. Max Unit

V

(BR)GSO

Gate-source breakdown voltage IGS= ± 1mA, ID= 0 30 - - V

The built-in back-to-back Zener diodes have specifically been designed to enhance the
device's ESD capability. In this respect the Zener voltage is appropriate to achieve an
efficient and cost-effective intervention to protect the device's integrity. These integrated
Zener diodes thus avoid the usage of external components.

DocID024348 Rev 4 5/24

Electrical characteristics STB13N80K5, STF13N80K5, STP13N80K5, STW13N80K5

I

D

10

1

0.1

0.1

1

100

V

DS

(V)

10

(A)

Operation in this area is

Limited by max R

DS(on)

10µs

100µs

1ms

10ms

Tj=150°C
Tc=25°C

Single pulse

AM15687v1

I

D

1

0.1

0.01

0.1

1

100

V

DS

(V)

10

(A)

Operation in this area is

Limited by max R

DS(on)

10µs

100µs

1ms

10ms

Tj=150°C
Tc=25°C

Single pulse

10

AM15688v1

I

D

10

1

0.1

0.1

1

100

V

DS

(V)

10

(A)

Operation in this area is

Limited by max R

DS(on)

10µs
100µs

1ms

10ms

Tj=150°C
Tc=25°C

Single pulse

AM15689v1

2.1 Electrical characteristics (curves)

Figure 2. Safe operating area for D2PAK Figure 3. Thermal impedance for D2PAK

Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP

Figure 6. Safe operating area for TO-220 Figure 7. Thermal impedance for TO-220

6/24 DocID024348 Rev 4

STB13N80K5, STF13N80K5, STP13N80K5, STW13N80K5 Electrical characteristics

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I

D

15

10

5

0

0

10

V

DS

(V)

20

(A)

5

15

20

25

6V

7V

8V

VGS=11V

9V

30

10V

AM15690v1

V

(BR)DSS

-100

T

J

(°C)

(norm)

-50

50

0

100

0.85

0.9

0.95

1

1.05

I

D

=1mA

150

1.1

AM15699v1

Figure 8. Safe operating area for TO-247 Figure 9. Thermal impedance for TO-247

Figure 10. Output characteristics Figure 11. Transfer characteristics

I

D

(A)

V

DS

=20V

30

25

AM15691v1

Figure 12. Normalized V

(BR)DSS

vs temperature Figure 13. Static drain-source on-resistance

DocID024348 Rev 4 7/24

R

DS(on)

20

15

10

(Ω)

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

5

0

5

6

4

7

9

8

10

V

GS

(V)

AM15693v1

VGS=10V

0

2

4

8

6

10

12

D

(A)

I

Electrical characteristics STB13N80K5, STF13N80K5, STP13N80K5, STW13N80K5

V

GS

6

4

2

0

0

5

Q

g

(nC)

(V)

20

8

10

15

10

25

12

600

400

200

0

700

V

DS

V

GS

300

500

100

30

AM15692v1

V

GS(th)

0.6

0.4

0.2

0

-100

T

J

(°C)

(norm)

-50

0.8

50

0

100

I

D

=100µA

150

1

1.2

AM15696v1

V

SD

0

4

I

SD

(A)

(V)

2

6

8

0.5

0.6

0.7

0.8

0.9

1

TJ=-50°C

TJ=150°C

TJ=25°C

10

AM15698v1

Figure 14. Gate charge vs gate-source voltage Figure 15. Capacitance variations

C

(pF)

AM15694v1

Figure 16. Normalized gate threshold voltage vs

temperature

1000

100

Coss

10

Crss

1

0.1

1

10

100

V

DS

(V)

Figure 17. Normalized on-resistance vs

temperature

R

DS(on)

(norm)

2.5

1.5

I

D

=6A

V

GS

=10V

2

1

AM15697v1

Ciss

Figure 18. Source-drain diode forward

8/24 DocID024348 Rev 4

characteristics

0.5

0

-100

-50

0

50

100

150

T

J

(°C)

Figure 19. Output capacitance stored energy

800

AM15695v1

V

DS

(V)

E

oss

(µJ)

12

10

8

6

4

2

0

0

100

200

300

400

500

600

700

STB13N80K5, STF13N80K5, STP13N80K5, STW13N80K5 Electrical characteristics

E

AS

0

40

T

J

(°C)

(mJ)

20

100

60

80

0

20

40

60

80

120

140

100

120

140

AM15700v1

Figure 20. Maximum avalanche energy vs.

starting T

j

DocID024348 Rev 4 9/24

Test circuits STB13N80K5, STF13N80K5, STP13N80K5, STW13N80K5

AM01468v1

VGS

PW

VD

RG

RL

D.U.T.

2200

μF

3.3
μF

V

DD

AM01469v1

VDD

47kΩ

1kΩ

47kΩ

2.7kΩ

1kΩ

12V

V

i=20V=VGMAX

2200
μF

PW

IG=CONST

100Ω

100nF

D.U.T.

V

G

AM01470v1

A

D

D.U.T.

S

B

G

25

Ω

A

A

B

B

R

G

G

FAST
DIODE

D

S

L=100μH

μF

3.3

1000

μF

V

DD

AM01472v1

V(BR)DSS

VDD

VDD

VD

IDM

ID

3 Test circuits

Figure 21. Switching times test circuit for

resistive load

Figure 23. Test circuit for inductive load

switching and diode recovery times

Figure 22. Gate charge test circuit

Figure 24. Unclamped inductive load test circuit

L

VD

2200

μF

3.3

μF

VDD

Figure 25. Unclamped inductive waveform Figure 26. Switching time waveform

10/24 DocID024348 Rev 4

ID

Vi

D.U.T.

Pw

AM01471v1

tdon

ton

tr

90%

tdoff

toff

tf

90%

10%

0

10%

VDS

90%

V

GS

10%

0

AM01473v1

STB13N80K5, STF13N80K5, STP13N80K5, STW13N80K5 Package mechanical data

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK

specifications, grade definitions and product status are available at: www.st.com.

ECOPACK

®

packages, depending on their level of environmental compliance. ECOPACK®

®

is an ST trademark.

DocID024348 Rev 4 11/24

Package mechanical data STB13N80K5, STF13N80K5, STP13N80K5, STW13N80K5

0079457_T

4.1 D2PAK, STB13N80K5

Figure 27. D²PAK (TO-263) drawing

12/24 DocID024348 Rev 4

STB13N80K5, STF13N80K5, STP13N80K5, STW13N80K5 Package mechanical data

Table 9. D²PAK (TO-263) mechanical data

mm

Dim.

Min. Typ. Max.

A4.40 4.60

A1 0.03 0.23

b0.70 0.93

b2 1.14 1.70

c0.45 0.60

c2 1.23 1.36

D8.95 9.35

D1 7.50

E 10 10.40

E1 8.50

e2.54

e1 4.88 5.28

H 15 15.85

J1 2.49 2.69

L2.29 2.79

L1 1.27 1.40

L2 1.30 1.75

R0.4

V2 0° 8°

DocID024348 Rev 4 13/24

Package mechanical data STB13N80K5, STF13N80K5, STP13N80K5, STW13N80K5

16.90

12.20

9.75

3.50

5.08

1.60

Footprint

Figure 28. D²PAK footprint

(a)

a. All dimension are in millimeters

14/24 DocID024348 Rev 4

STB13N80K5, STF13N80K5, STP13N80K5, STW13N80K5 Package mechanical data

7012510_Rev_K_B

4.2 TO-220FP, STF13N80K5

Figure 29. TO-220FP drawing

DocID024348 Rev 4 15/24

Package mechanical data STB13N80K5, STF13N80K5, STP13N80K5, STW13N80K5

Table 10. TO-220FP mechanical data

mm

Dim.

Min. Typ. Max.

A4.4 4.6

B2.5 2.7

D2.5 2.75

E 0.45 0.7

F0.75 1

F1 1.15 1.70

F2 1.15 1.70

G 4.95 5.2

G1 2.4 2.7

H10 10.4

L2 16

L3 28.6 30.6

L4 9.8 10.6

L5 2.9 3.6

L6 15.9 16.4

L7 9 9.3

Ø3 3.2

16/24 DocID024348 Rev 4

STB13N80K5, STF13N80K5, STP13N80K5, STW13N80K5 Package mechanical data

BW\SH$B5HYB7

4.3 TO-220, STP13N80K5

Figure 30. TO-220 type A drawing

DocID024348 Rev 4 17/24

Package mechanical data STB13N80K5, STF13N80K5, STP13N80K5, STW13N80K5

Table 11. TO-220 type A mechanical data

mm

Dim.

Min. Typ. Max.

A4.40 4.60

b0.61 0.88

b1 1.14 1.70

c0.48 0.70

D 15.25 15.75

D1 1.27

E 10 10.40

e2.40 2.70

e1 4.95 5.15

F1.23 1.32

H1 6.20 6.60

J1 2.40 2.72

L13 14

L1 3.50 3.93

L20 16.40

L30 28.90

∅P3.75 3.85

Q2.65 2.95

18/24 DocID024348 Rev 4

STB13N80K5, STF13N80K5, STP13N80K5, STW13N80K5 Package mechanical data

0075325_G

4.4 TO-247, STW13N80K5

Figure 31. TO-247 drawing

DocID024348 Rev 4 19/24

Package mechanical data STB13N80K5, STF13N80K5, STP13N80K5, STW13N80K5

Table 12. TO-247 mechanical data

mm.

Dim.

Min. Typ. Max.

A 4.85 5.15

A1 2.20 2.60

b1.0 1.40

b1 2.0 2.40

b2 3.0 3.40

c 0.40 0.80

D 19.85 20.15

E 15.45 15.75

e 5.30 5.45 5.60

L 14.20 14.80

L1 3.70 4.30

L2 18.50

∅P 3.55 3.65

∅R 4.50 5.50

S 5.30 5.50 5.70

20/24 DocID024348 Rev 4

STB13N80K5, STF13N80K5, STP13N80K5, STW13N80K5 Packaging mechanical data

P1

A0

D1

P0

F

W

E

D

B0

K0

T

User direction of feed

P2

10 pitches cumulative
tolerance on tape +/- 0.2 mm

User direction of feed

R

Bending radius

B1

For machine ref. only
including draft and
radii concentric around B0

AM08852v1

Top cover
tape

5 Packaging mechanical data

Figure 32. Tape

DocID024348 Rev 4 21/24

Packaging mechanical data STB13N80K5, STF13N80K5, STP13N8 0K5, STW 13N8 0K5

A

D

B

Full radius

G measured at hub

C

N

REEL DIMENSIONS

40mm min.

Access hole

At slot location

T

Tape slot
in core for
tape start 25 mm min.
width

AM08851v2

Table 13. D²PAK (TO-263) tape and reel mechanical data

Tape Reel

Dim.

mm

Dim.

mm

Min. Max. Min. Max.

A0 10.5 10.7 A 330

B0 15.7 15.9 B 1.5

D 1.5 1.6 C 12.8 13.2

D1 1.59 1.61 D 20.2

E 1.65 1.85 G 24.4 26.4

F 11.4 11.6 N 100

K0 4.8 5.0 T 30.4

P0 3.9 4.1

P1 11.9 12.1 Base qty 1000

P2 1.9 2.1 Bulk qty 1000

R50

T 0.25 0.35

W 23.7 24.3

Figure 33. Reel

22/24 DocID024348 Rev 4

STB13N80K5, STF13N80K5, STP13N80K5, STW13N80K5 Revision history

6 Revision history

Date Revision Changes

07-Mar-2013 1 Initial release.

27-Mar-2013 2

15-Apr-2013 3

27-Jun-2014 4

Table 14. Document revision history

Updated Figure 1: Internal schematic diagram.

Minor text changes.
Document status promoted from preliminary data to production data.

– Modified: E

– Inserted: Section 2.1: Electrical characteristics (curves)

– Minor text changes

– Added: TO-247 package

– Added: Figure 8 and 9
– Updated: Section 4: Package mechanical data

– Minor text changes

value, the entire typical values on Table 5, 6 and 7

AS

DocID024348 Rev 4 23/24

STB13N80K5, STF13N80K5, STP 13N8 0K5, STW 13N8 0K5

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