ST MICROELECTRONICS STP13N80K5 Datasheet

STB13N80K5, STF13N80K5,

TO-220

1

2

3

TAB

1

2

3

TO-220FP

1

3

TAB

D2PAK

1

2

3

TO-247

D(2, TAB)

G(1)

S(3)

AM01476v1

STP13N80K5, STW13N80K5

N-channel 800 V, 0.37 Ω typ., 12 A SuperMESH™ 5 Power

MOSFETs in D²PAK, TO-220FP, TO-220 and TO-247 packages

Datasheet - production data

Features

Figure 1. Internal schematic diagram

Order codes V

STB13N80K5

STF13N80K5 35 W

STP13N80K5

STW13N80K5

DS

800 V 0.45 Ω 12 A

R

DS(on)

I

P

D

TOT

190 W

190 W

• Worldwide best FOM (figure of merit)

• Ultra low gate charge

• 100% avalanche tested

• Zener-protected

Applications

• Switching applications

Description

These devices are N-channel Zener-protected
Power MOSFETs realized in SuperMESH™ 5, a
revolutionary avalanche-rugged very high voltage
Power MOSFET technology based on an
innovative proprietary vertical structure. The
result is a drastic reduction in on-resistance and
ultra low gate charge for applications which
require superior power density and high
efficiency.

Table 1. Device summary

Order codes Marking Packages Packaging

STB13N80K5

STF13N80K5 TO-220FP

STW13N80K5 TO-247

June 2014 DocID024348 Rev 4 1/24

This is information on a product in full production.

13N80K5

D²PAK Tape and reel

TubeSTP13N80K5 TO-220

www.st.com

24

Contents STB13N80K5, STF13N80K5, STP 13N8 0K5, STW 13N8 0K5

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

4.1 D2PAK, STB13N80K5 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

4.2 TO-220FP, STF13N80K5 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

4.3 TO-220, STP13N80K5 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17

4.4 TO-247, STW13N80K5 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19

5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21

6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23

2/24 DocID024348 Rev 4

STB13N80K5, STF13N80K5, STP13N80K5, STW13N80K5 Electrical ratings

1 Electrical ratings

Table 2. Absolute maximum ratings

Value

Symbol Parameter

D²PAK, T O-220,

TO-247

TO-220FP

Unit

Gate-source voltage ± 30 V

Drain current (continuous) at TC = 25 °C 12 12

Drain current (continuous) at TC = 100 °C 7.6 7.6

(2)

Drain current (pulsed) 48 48

Total dissipation at TC = 25 °C 190 35 W

I

DM

P

V

GS

I

D

I

D

TOT

Max current during repetitive or single

I

AR

E

AS

pulse avalanche
(pulse width limited by T

jmax

Single pulse avalanche energy
(starting TJ = 25 °C, ID=IAS, VDD= 50 V)

Insulation withstand voltage (RMS) from

V

iso

dv/dt

dv/dt

T

T

stg

1. Limited by package.

2. Pulse width limited by safe operating area.

3. ISD ≤ 12 A, di/dt ≤ 100 A/μs, V

4. VDS ≤ 640 V

all three leads to external heat sink
(t=1 s; T

(3)

Peak diode recovery voltage slope 4.5 V/ns

(4)

MOSFET dv/dt ruggedness 50 V/ns

Operating junction temperature

j

=25 °C)

C

Storage temperature

≤ V

Peak

)

(BR)DSS

(1)

(1)

(1)

A

A

A

4A

148 mJ

2500 V

-55 to 150 °C

Table 3. Thermal data

Symbol Parameter

R

thj-case

thj-amb

R

thj-pcb

1. When mounted on 1inch² FR-4 board, 2 oz Cu.

Thermal resistance junction-case max 0.66 3.57

Thermal resistance junction-amb max 62.5 50

(1)

Thermal resistance junction-pcb max 30

DocID024348 Rev 4 3/24

Value

Unit

D²PAK TO-220 TO-220FP TO-247

°C/WR

Electrical characteristics STB13N80K5, STF13N80K5, STP13N80K5, STW13N80K5

2 Electrical characteristics

(T

= 25 °C unless otherwise specified).

CASE

T a ble 4. On/off states

Symbol Parameter T est cond ition s Min. T yp . Max. Unit

V

(BR)DSS

V

R

I

DSS

I

GSS

GS(th)

DS(on)

Drain-source breakdown
voltage

Zero gate voltage drain
current

VGS= 0, ID = 1 mA 800 V

V

= 0, V

GS

V

= 0, V

GS

Tc=125 °C

Gate body leakage current VDS = 0, V

Gate threshold voltage V

Static drain-source
on-resistance

= VGS, ID = 100 μA345V

DS

= 10 V, ID= 6 A 0.37 0.45 Ω

V

GS

= 800 V 1 μA

DS

= 800 V,

DS

= ± 20 V ±10 μA

GS

50 μA

Table 5. Dynamic

Symbol Parameter Test conditions Min. Typ. Max. Unit

C

C

C

Input capacitance

iss

Output capacitance - 50 - pF

oss

Reverse transfer

rss

capacitance

=100 V, f=1 MHz, VGS=0

V

DS

-870- pF

-2-pF

o(tr)

related

Equivalent capacitance time

(1)

C

VGS = 0, VDS = 0 to 640 V

o(er)

R

Q

Q

Q

1. Time related is defined as a constant equivalent capacitance giving the same charging time as C
V

2. Energy related is defined as a constant equivalent capacitance giving the same stored energy as C
when VDS increases from 0 to 80% V

energy related

Intrinsic gate resistance f = 1MHz, ID=0 - 5 - Ω

G

Total gate charge

g

Gate-source charge - 7 - nC

gs

Gate-drain charge - 18 - nC

gd

increases from 0 to 80% V

DS

DSS

V

DD

V

GS

(see Figure 22)

DSS

= 640 V, ID = 12 A
=10 V

Equivalent capacitance

(2)

C

4/24 DocID024348 Rev 4

-110 - pF

-43-pF

-29-nC

when

oss

oss

STB13N80K5, STF13N80K5, STP13N80K5, STW13N80K5 Electrical characteristics

Table 6. Switching times

Symbol Parameter Test conditions Min. Typ. Max. Unit

t

d(on)

t

d(off)

Turn-on delay time

= 400 V, ID = 6A,

V

t

Rise time - 16 - ns

r

Turn-off delay time - 42 - ns

t

Fall time - 16 - ns

f

DD

R

=4.7 Ω, VGS=10 V

G

(see Figure 24)

-16-ns

T a ble 7. Source drain diode

Symbol Parameter Test conditions Min. Typ. Max. Unit

I

SD

I

SDM

V

SD

t

Q

I

RRM

t

Q

I

RRM

1. Pulsed: pulse duration = 300μs, duty cycle 1.5%

Source-drain current - 14 A

Source-drain current (pulsed) - 56 A

(1)

Forward on voltage VGS=0, ISD= 12 A - 1.5 V

Reverse recovery time

rr

Reverse recovery charge - 5.7 μC

rr

Reverse recovery current - 28 A

Reverse recovery time ISD= 12 A,VDD= 60 V

rr

Reverse recovery charge - 7.9 μC

rr

Reverse recovery current - 26 A

I

= 12 A, VDD= 60 V

SD

di/dt = 100 A/μs,

(see Figure 23)

di/dt=100 A/μs,
Tj=150 °C

(see Figure 23)

- 406 ns

- 600 ns

Table 8. Gate-source Zener diode

Symbol Parameter Test conditions Min. Typ. Max Unit

V

(BR)GSO

Gate-source breakdown voltage IGS= ± 1mA, ID= 0 30 - - V

The built-in back-to-back Zener diodes have specifically been designed to enhance the
device's ESD capability. In this respect the Zener voltage is appropriate to achieve an
efficient and cost-effective intervention to protect the device's integrity. These integrated
Zener diodes thus avoid the usage of external components.

DocID024348 Rev 4 5/24

Electrical characteristics STB13N80K5, STF13N80K5, STP13N80K5, STW13N80K5

I

D

10

1

0.1

0.1

1

100

V

DS

(V)

10

(A)

Operation in this area is

Limited by max R

DS(on)

10µs

100µs

1ms

10ms

Tj=150°C
Tc=25°C

Single pulse

AM15687v1

I

D

1

0.1

0.01

0.1

1

100

V

DS

(V)

10

(A)

Operation in this area is

Limited by max R

DS(on)

10µs

100µs

1ms

10ms

Tj=150°C
Tc=25°C

Single pulse

10

AM15688v1

I

D

10

1

0.1

0.1

1

100

V

DS

(V)

10

(A)

Operation in this area is

Limited by max R

DS(on)

10µs
100µs

1ms

10ms

Tj=150°C
Tc=25°C

Single pulse

AM15689v1

2.1 Electrical characteristics (curves)

Figure 2. Safe operating area for D2PAK Figure 3. Thermal impedance for D2PAK

Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP

Figure 6. Safe operating area for TO-220 Figure 7. Thermal impedance for TO-220

6/24 DocID024348 Rev 4

STB13N80K5, STF13N80K5, STP13N80K5, STW13N80K5 Electrical characteristics

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I

D

15

10

5

0

0

10

V

DS

(V)

20

(A)

5

15

20

25

6V

7V

8V

VGS=11V

9V

30

10V

AM15690v1

V

(BR)DSS

-100

T

J

(°C)

(norm)

-50

50

0

100

0.85

0.9

0.95

1

1.05

I

D

=1mA

150

1.1

AM15699v1

Figure 8. Safe operating area for TO-247 Figure 9. Thermal impedance for TO-247

Figure 10. Output characteristics Figure 11. Transfer characteristics

I

D

(A)

V

DS

=20V

30

25

AM15691v1

Figure 12. Normalized V

(BR)DSS

vs temperature Figure 13. Static drain-source on-resistance

DocID024348 Rev 4 7/24

R

DS(on)

20

15

10

(Ω)

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

5

0

5

6

4

7

9

8

10

V

GS

(V)

AM15693v1

VGS=10V

0

2

4

8

6

10

12

D

(A)

I

Electrical characteristics STB13N80K5, STF13N80K5, STP13N80K5, STW13N80K5

V

GS

6

4

2

0

0

5

Q

g

(nC)

(V)

20

8

10

15

10

25

12

600

400

200

0

700

V

DS

V

GS

300

500

100

30

AM15692v1

V

GS(th)

0.6

0.4

0.2

0

-100

T

J

(°C)

(norm)

-50

0.8

50

0

100

I

D

=100µA

150

1

1.2

AM15696v1

V

SD

0

4

I

SD

(A)

(V)

2

6

8

0.5

0.6

0.7

0.8

0.9

1

TJ=-50°C

TJ=150°C

TJ=25°C

10

AM15698v1

Figure 14. Gate charge vs gate-source voltage Figure 15. Capacitance variations

C

(pF)

AM15694v1

Figure 16. Normalized gate threshold voltage vs

temperature

1000

100

Coss

10

Crss

1

0.1

1

10

100

V

DS

(V)

Figure 17. Normalized on-resistance vs

temperature

R

DS(on)

(norm)

2.5

1.5

I

D

=6A

V

GS

=10V

2

1

AM15697v1

Ciss

Figure 18. Source-drain diode forward

8/24 DocID024348 Rev 4

characteristics

0.5

0

-100

-50

0

50

100

150

T

J

(°C)

Figure 19. Output capacitance stored energy

800

AM15695v1

V

DS

(V)

E

oss

(µJ)

12

10

8

6

4

2

0

0

100

200

300

400

500

600

700