ST MICROELECTRONICS STP11NM60ND Datasheet

N-channel 600 V, 0.37 Ω, 10 A, FDmesh™ II Power MOSFET
TO-220
TO-220FP
I²PAK
1
2
3
1
2
3
1
2
3
IPAK
DPAK
1
3
3
2
1
STD11NM60ND, STF/I11NM60ND
STP11NM60ND, STU11NM60ND
2
I
PAK, TO-220, TO-220FP, IPAK, DPAK
Order codes V
DSS
(@T
jmax)RDS(on)
max I
STD11NM60ND STF11NM60ND
STI11NM60ND
650 V < 0.45 Ω STP11NM60ND STU11NM60ND
1. Limited only by maximum temperature allowed
The worldwide best R
* area amongst the
DS(on)
fast recovery diode devices
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
Extremely high dv/dt and avalanche
capabilities
Application
Switching applications
Description
10 A
10 A
10 A 10 A 10 A
D
(1)

Figure 1. Internal schematic diagram

$
The device is an N-channel FDmesh™ II Power MOSFET that belongs to the second generation
'
of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company's strip layout and associates all advantages of reduced on-
3
resistance and fast switching with an intrinsic fast­recovery body diode.It is therefore strongly recommended for bridge topologies, in particular
!-V
ZVS phase-shift converters.

Table 1. Device summary

Order codes Marking Package Packaging
STD11NM60ND STF11NM60ND
STI11NM60ND STP11NM60ND STU11NM60ND
11NM60ND
DPAK
TO-220FP
2
PA K
I
TO-220
IPAK
Tape and reel
Tu be Tu be Tu be Tu be
October 2010 Doc ID 14625 Rev 2 1/19
www.st.com
19
Contents STD/F/I/P/U11NM60ND
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
2/19 Doc ID 14625 Rev 2
STD/F/I/P/U11NM60ND Electrical ratings

1 Electrical ratings

Table 2. Absolute maximum ratings

Val ue
Symbol Parameter
DPAK/I²PAK, TO-220/IPAK
TO-220FP
Unit
V
V
I
DM
P
dv/dt
Drain-source voltage (VGS=0)
DS
Gate-source voltage ± 25 V
GS
I
Drain current (continuous) at TC = 25°C
D
Drain current (continuous) at TC = 100°C
I
D
(2)
Drain current (pulsed) 40
Total dissipation at TC = 25°C
TOT
(3)
Peak diode recovery voltage slope 40 V/ns
Insulation withstand voltage (RMS) from all
V
three leads to external heat sink
ISO
(t=1s;TC=25°C)
T
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. I
SD
Storage temperature -55 to 150 °C
stg
T
Max. operating junction temperature 150 °C
j
≤ 10 A, di/dt 400 A/µs, V
= 80% V
DD
(BR)DSS

Table 3. Thermal data

, peak VDS ≤ V
600 V
10
6.3
10
6.3
40
90 25 W
2500 V
(BR)DSS
(1)
(1)
(1)
A
A
A
Symbol Parameter
R
thj-case
R
thj-amb
R
thj-pcb
1. When mounted on 1inch² FR-4 board, 2 oz Cu
Thermal resistance junction-case max
Thermal resistance junction-amb max 62.5 100 62.5 °C/W
(1)
Thermal resistance junction-pcb max 50 °C/W
Maximum lead temperature for
T
l
soldering purposes
Doc ID 14625 Rev 2 3/19
Val ue
Unit
TO-220 I²PAK DPAK IPAK TO-220FP
1.38 5 °C/W
300 300 °C
Electrical ratings STD/F/I/P/U11NM60ND

Table 4. Avalanche characteristics

Symbol Parameter Max value Unit
I
E
1. Pulse width limited by Tj max
2. starting Tj= 25 °C, ID=IAS, VDD= 50 V
Avalanche current, repetitive or not-repetitive
AS
Single pulse avalanche energy
AS
(2)
(1)
3.5 A
200 mJ
4/19 Doc ID 14625 Rev 2
STD/F/I/P/U11NM60ND Electrical characteristics

2 Electrical characteristics

(T
= 25 °C unless otherwise specified)
CASE

Table 5. On/off states

Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)DSS
dv/dt
I
DSS
I
GSS
V
GS(th)
R
DS(on)
1. Value measured at turn off under inductive load
Drain-source breakdown voltage
(1)
Drain-source voltage slope
Zero gate voltage drain current (VGS = 0)
Gate body leakage current
= 0)
(V
DS
= 1 mA, VGS= 0 600 V
I
D
V
= 480 V,ID = 10 A,
DD
= 10 V
V
GS
= max rating,
V
DS
= max rating,@125 °C
V
DS
V
= ±20 V 100 nA
GS
45 V/ns
Gate threshold voltage VDS= VGS, ID = 250 µA 3 4 5 V
Static drain-source on resistance
V
= 10 V, ID= 5 A 0.37 0.45 Ω
GS
1
100µAµA

Table 6. Dynamic

Symbol Parameter Test conditions Min. Typ. Max. Unit
(1)
g
fs
C
C
C
C
oss eq.
Rg Gate input resistance
Forward transconductance V
Input capacitance
iss
Output capacitance
oss
Reverse transfer
rss
capacitance
Equivalent output
(2)
capacitance
=15 V, ID= 5 A - 7.5 - S
DS
= 50 V, f =1 MHz,
V
DS
= 0
V
GS
= 0, V
V
GS
DS
= 0V to 480 V - 130 - pF
850
-
44
5
f=1 MHz Gate DC Bias=0 Test signal level=20 mV
-3.7- Ω
open drain
-
pF pF pF
Q Q Q
1. Pulsed: pulse duration = 300µs, duty cycle 1.5%
2. C increases from 0 to 80% V
Total gate charge
g
Gate-source charge
gs
Gate-drain charge
gd
is defined as a constant equivalent capacitance giving the same charging time as C
oss eq.
DSS
V
DD
V
GS
(see Figure 19)
Doc ID 14625 Rev 2 5/19
= 480 V, ID = 10 A = 10 V
30
-
4
16
when VDS
oss
nC
-
nC nC
Electrical characteristics STD/F/I/P/U11NM60ND

Table 7. Switching times

Symbol Parameter Test conditions Min Typ Max Unit
t
d(on)
t
d(off)
Turn-on delay time
t
Rise time
r
Turn-off delay time
t
Fall time
f
= 300 V, ID = 5 A,
V
DD
= 4.7 Ω, VGS = 10 V
R
G
(see Figure 18)
16
7
­50
-
9

Table 8. Source drain diode

Symbol Parameter Test conditions Min Typ Max Unit
I
SD
I
SDM
V
SD
t
Q
I
RRM
t
Q
I
RRM
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300µs, duty cycle 1.5%
Source-drain current
(1)
Source-drain current (pulsed)
(2)
Forward on voltage ISD = 10 A, VGS=0 - 1.3 V
Reverse recovery time
rr
Reverse recovery charge
rr
Reverse recovery current
Reverse recovery time
rr
Reverse recovery charge
rr
Reverse recovery current
=10 A, di/dt =100 A/µs,
I
SD
= 100 V
V
DD
(see Figure 20)
= 100 V
V
DD
di/dt =100 A/µs, I
SD
= 10 A
Tj = 150 °C (see Figure 20)
-
130
-
0.69
200
-
1040A
11
1.2 12
ns ns ns ns
A
ns µC
A
ns µC
A
6/19 Doc ID 14625 Rev 2
STD/F/I/P/U11NM60ND Electrical characteristics
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4J# 4C#
3INGLE PULSE
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I
D
10
1
0.1
0.1
1
100
V
DS
(V)
10
(A)
Operation in this area is
Limited by max RDS(on)
10µs
100µs
1ms
10ms
Tj=150°C Tc=25°C
Single pulse
0.01
AM08612v1
I
D
10
1
0.1
0.1
1
100
V
DS
(V)
10
(A)
Operation in this area is
Limited by max R
DS(on)
10µs
100µs
1ms
10ms
Tj=150°C Tc=25°C
Single pulse
AM08613v1

2.1 Electrical characteristics (curves)

Figure 2. Safe operating area for TO-220,
Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP
I²PAK
Figure 3. Thermal impedance for TO-220,
I²PAK
Figure 6. Safe operating area for DPAK, IPAK Figure 7. Thermal impedance for DPAK, IPAK
Doc ID 14625 Rev 2 7/19
Electrical characteristics STD/F/I/P/U11NM60ND
Figure 8. Output characteristics Figure 9. Transfer characteristics

Figure 10. Transconductance Figure 11. Static drain-source on resistance

Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations
8/19 Doc ID 14625 Rev 2
STD/F/I/P/U11NM60ND Electrical characteristics
Figure 14. Normalized gate threshold voltage
vs temperature
Figure 16. Source-drain diode forward
characteristics
Figure 15. Normalized on resistance vs
temperature
Figure 17. Normalized B
vs temperature
VDSS
Doc ID 14625 Rev 2 9/19
Test circuits STD/F/I/P/U11NM60ND
AM01468v1
VGS
PW
VD
RG
RL
D.U.T.
2200
μF
3.3 μF
V
DD
AM01469v1
VDD
47kΩ
1kΩ
47kΩ
2.7kΩ
1kΩ
12V
V
i=20V=VGMAX
2200 μF
PW
IG=CONST
100Ω
100nF
D.U.T.
V
G
AM01470v1
A
D
D.U. T.
S
B
G
25
Ω
A
A
B
B
R
G
G
FAST DIODE
D
S
L=100μH
μF
3.3
1000
μF
V
DD
AM01471v1
Vi
Pw
VD
ID
D.U. T.
L
2200
μF
3.3 μF
VDD
AM01472v1
V(BR)DSS
VDD
VDD
VD
IDM
ID
AM01473v1
VDS
ton
tdon
tdoff
toff
tf
tr
90%
10%
10%
0
0
90%
90%
10%
V
GS

3 Test circuits

Figure 18. Switching times test circuit for
resistive load
Figure 20. Test circuit for inductive load
switching and diode recovery times

Figure 19. Gate charge test circuit

Figure 21. Unclamped inductive load test
circuit

Figure 22. Unclamped inductive waveform Figure 23. Switching time waveform

10/19 Doc ID 14625 Rev 2
STD/F/I/P/U11NM60ND Package mechanical data

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark.
®
packages, depending on their level of environmental compliance. ECOPACK®
Doc ID 14625 Rev 2 11/19
Package mechanical data STD/F/I/P/U11NM60ND

Table 9. TO-220FP mechanical data

mm
Dim.
Min. Typ. Max.
A4.4 4.6
B2.5 2.7
D 2.5 2.75
E0.45 0.7
F0.75 1
F1 1.15 1.70
F2 1.15 1.70
G4.95 5.2
G1 2.4 2.7
H 10 10.4
L2 16
L3 28.6 30.6
L4 9.8 10.6
L5 2.9 3.6
L6 15.9 16.4
L7 9 9.3
Dia 3 3.2

Figure 24. TO-220FP drawing

L7
A
B
Dia
L6
H
D
L5
F2
F1
E
F
G
G1
L2
L3
12/19 Doc ID 14625 Rev 2
L4
7012510_Rev_K
STD/F/I/P/U11NM60ND Package mechanical data
TO-220 type A mechanical data
Dim
mm
Min Typ Max
A 4.40 4.60
b 0.61 0.88
b1 1.14 1.70
c0.48 0.70
D 15.25 15.75
D1 1.27
E10 10.40 e 2.40 2.70
e1 4.95 5.15
F1.23 1.32
H1 6.20 6.60
J1 2.40 2.72
L13 14
L1 3.50 3.93 L20 16.40 L3028.90
P 3.75 3.85
Q 2.65 2.95
0015988_Rev_S
Doc ID 14625 Rev 2 13/19
Package mechanical data STD/F/I/P/U11NM60ND
I²PAK (TO-262) mechanical data
Dim
mm inch
Min Typ Max Min Typ Max
A 4.40 4.60 0.173 0.181
A1 2.40 2.72 0.094 0.107
b 0.61 0.88 0.024 0.034
b1 1.14 1.70 0.044 0.066
c 0.49 0.70 0.019 0.027
c2 1.23 1.320.048 0.052
D 8.95 9.350.352 0.368
e 2.40 2.70 0.094 0.106
e1 4.95 5.15 0.194 0.202
E 10 10.40 0.393 0.410
L13 14 0.511 0.551 L1 3.50 3.93 0.137 0.154 L2 1.27 1.40 0.050 0.055
14/19 Doc ID 14625 Rev 2
STD/F/I/P/U11NM60ND Package mechanical data
DIM.
mm.
min. typ max.
A 2.20 2.40
A1 0.901.10
A2 0.03 0.23
b 0.64 0.90
b4 5.20 5.40
c 0.45 0.60
c2 0.48 0.60
D 6.00 6.20
D1 5.10
E 6.40 6.60
E1 4.70
e2.28
e1 4.40 4.60
H 9.35 10.10
L1
L1 2.80
L2 0.80
L4 0.60 1
R0.20
V2 0
o
8
o
TO-252 (DPAK) mechanical data
0068772_G
Doc ID 14625 Rev 2 15/19
Package mechanical data STD/F/I/P/U11NM60ND
DIM.
mm.
min. typ max.
A 2.20 2.40
A1 0.901.10
b 0.64 0.90
b2 0.95
b4 5.20 5.40
c 0.45 0.60
c2 0.48 0.60
D 6.00 6.20
E 6.40 6.60
e2.28
e1 4.40 4.60
H 16.10
L 9.00 9.40
(L1) 0.801.20
L2 0.80
V1
10
o
TO-251 (IPAK) mechanical data
0068771_H
16/19 Doc ID 14625 Rev 2
STD/F/I/P/U11NM60ND Packaging mechanical data
TAPE AND REEL SHIPMENT
DPAK FOOTPRINT
DIM.
mm inch
MIN. MAX. MIN. MAX.
A 330 12.992
B 1.5 0.059
C 12.8 13.2 0.504 0.520
D 20.2 0.795
G 16.4 18.4 0.645 0.724
N 50 1.968
T 22.4 0.881
BASE QTY BULK QTY
2500 2500
REEL MECHANICAL DATA
DIM.
mm inch
MIN. MAX. MIN. MAX.
A0 6.8 7 0.267 0.275
B0 10.4 10.6 0.409 0.417
B1 12.1 0.476
D 1.5 1.6 0.059 0.063
D1 1.5 0.059
E 1.65 1.85 0.065 0.073
F 7.4 7.6 0.291 0.299
K0 2.55 2.75 0.100 0.108
P0 3.9 4.1 0.153 0.161
P1 7.9 8.1 0.311 0.319
P2 1.9 2.1 0.075 0.082
R 40 1.574
W 15.7 16.3 0.618 0.641
TAPE MECHANICAL DATA
All dimensions are in millimeters

5 Packaging mechanical data

Doc ID 14625 Rev 2 17/19
Revision history STD/F/I/P/U11NM60ND

6 Revision history

Table 10. Document revision history

Date Revision Changes
23-Apr-2008 1 First release
– Corrected Figure 2: Safe operating area for TO-220, I²PAK
25-Oct-2010 2
– Corrected Figure 4: Safe operating area for TO-220FP – Corrected Figure 6: Safe operating area for DPAK, IPAK
18/19 Doc ID 14625 Rev 2
STD/F/I/P/U11NM60ND
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