ST MICROELECTRONICS STP11NM60ND Datasheet

N-channel 600 V, 0.37 Ω, 10 A, FDmesh™ II Power MOSFET

TO-220

TO-220FP

I²PAK

1

2

3

1

2

3

1

2

3

IPAK

DPAK

1

3

3

2

1

Features

STD11NM60ND, STF/I11NM60ND

STP11NM60ND, STU11NM60ND

2

I

PAK, TO-220, TO-220FP, IPAK, DPAK

Order codes V

DSS

(@T

jmax)RDS(on)

max I

STD11NM60ND
STF11NM60ND

STI11NM60ND

650 V < 0.45 Ω
STP11NM60ND
STU11NM60ND

1. Limited only by maximum temperature allowed

■ The worldwide best R

* area amongst the

DS(on)

fast recovery diode devices

■ 100% avalanche tested

■ Low input capacitance and gate charge

■ Low gate input resistance

■ Extremely high dv/dt and avalanche

capabilities

Application

Switching applications

Description

10 A

10 A

10 A
10 A
10 A

D

(1)

Figure 1. Internal schematic diagram

$

The device is an N-channel FDmesh™ II Power
MOSFET that belongs to the second generation

'

of MDmesh™ technology. This revolutionary
Power MOSFET associates a new vertical
structure to the company's strip layout and
associates all advantages of reduced on-

3

resistance and fast switching with an intrinsic fast­recovery body diode.It is therefore strongly
recommended for bridge topologies, in particular

!-V

ZVS phase-shift converters.

Table 1. Device summary

Order codes Marking Package Packaging

STD11NM60ND
STF11NM60ND

STI11NM60ND
STP11NM60ND
STU11NM60ND

11NM60ND

DPAK

TO-220FP

2

PA K

I

TO-220

IPAK

Tape and reel

Tu be
Tu be
Tu be
Tu be

October 2010 Doc ID 14625 Rev 2 1/19

www.st.com

19

Contents STD/F/I/P/U11NM60ND

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17

6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18

2/19 Doc ID 14625 Rev 2

STD/F/I/P/U11NM60ND Electrical ratings

1 Electrical ratings

Table 2. Absolute maximum ratings

Val ue

Symbol Parameter

DPAK/I²PAK,
TO-220/IPAK

TO-220FP

Unit

V

V

I

DM

P

dv/dt

Drain-source voltage (VGS=0)

DS

Gate-source voltage ± 25 V

GS

I

Drain current (continuous) at TC = 25°C

D

Drain current (continuous) at TC = 100°C

I

D

(2)

Drain current (pulsed) 40

Total dissipation at TC = 25°C

TOT

(3)

Peak diode recovery voltage slope 40 V/ns

Insulation withstand voltage (RMS) from all

V

three leads to external heat sink

ISO

(t=1s;TC=25°C)

T

1. Limited only by maximum temperature allowed

2. Pulse width limited by safe operating area

3. I

SD

Storage temperature -55 to 150 °C

stg

T

Max. operating junction temperature 150 °C

j

≤ 10 A, di/dt ≤ 400 A/µs, V

= 80% V

DD

(BR)DSS

Table 3. Thermal data

, peak VDS ≤ V

600 V

10

6.3

10

6.3

40

90 25 W

2500 V

(BR)DSS

(1)

(1)

(1)

A

A

A

Symbol Parameter

R

thj-case

R

thj-amb

R

thj-pcb

1. When mounted on 1inch² FR-4 board, 2 oz Cu

Thermal resistance junction-case
max

Thermal resistance junction-amb max 62.5 100 62.5 °C/W

(1)

Thermal resistance junction-pcb max 50 °C/W

Maximum lead temperature for

T

l

soldering purposes

Doc ID 14625 Rev 2 3/19

Val ue

Unit

TO-220 I²PAK DPAK IPAK TO-220FP

1.38 5 °C/W

300 300 °C

Electrical ratings STD/F/I/P/U11NM60ND

Table 4. Avalanche characteristics

Symbol Parameter Max value Unit

I

E

1. Pulse width limited by Tj max

2. starting Tj= 25 °C, ID=IAS, VDD= 50 V

Avalanche current, repetitive or not-repetitive

AS

Single pulse avalanche energy

AS

(2)

(1)

3.5 A

200 mJ

4/19 Doc ID 14625 Rev 2

STD/F/I/P/U11NM60ND Electrical characteristics

2 Electrical characteristics

(T

= 25 °C unless otherwise specified)

CASE

Table 5. On/off states

Symbol Parameter Test conditions Min. Typ. Max. Unit

V

(BR)DSS

dv/dt

I

DSS

I

GSS

V

GS(th)

R

DS(on)

1. Value measured at turn off under inductive load

Drain-source breakdown
voltage

(1)

Drain-source voltage slope

Zero gate voltage drain
current (VGS = 0)

Gate body leakage current

= 0)

(V

DS

= 1 mA, VGS= 0 600 V

I

D

V

= 480 V,ID = 10 A,

DD

= 10 V

V

GS

= max rating,

V

DS

= max rating,@125 °C

V

DS

V

= ±20 V 100 nA

GS

45 V/ns

Gate threshold voltage VDS= VGS, ID = 250 µA 3 4 5 V

Static drain-source on
resistance

V

= 10 V, ID= 5 A 0.37 0.45 Ω

GS

1

100µAµA

Table 6. Dynamic

Symbol Parameter Test conditions Min. Typ. Max. Unit

(1)

g

fs

C

C

C

C

oss eq.

Rg Gate input resistance

Forward transconductance V

Input capacitance

iss

Output capacitance

oss

Reverse transfer

rss

capacitance

Equivalent output

(2)

capacitance

=15 V, ID= 5 A - 7.5 - S

DS

= 50 V, f =1 MHz,

V

DS

= 0

V

GS

= 0, V

V

GS

DS

= 0V to 480 V - 130 - pF

850

-

44

5

f=1 MHz Gate DC Bias=0
Test signal level=20 mV

-3.7- Ω

open drain

-

pF
pF
pF

Q
Q
Q

1. Pulsed: pulse duration = 300µs, duty cycle 1.5%

2. C
increases from 0 to 80% V

Total gate charge

g

Gate-source charge

gs

Gate-drain charge

gd

is defined as a constant equivalent capacitance giving the same charging time as C

oss eq.

DSS

V

DD

V

GS

(see Figure 19)

Doc ID 14625 Rev 2 5/19

= 480 V, ID = 10 A
= 10 V

30

-

4

16

when VDS

oss

nC

-

nC
nC

Electrical characteristics STD/F/I/P/U11NM60ND

Table 7. Switching times

Symbol Parameter Test conditions Min Typ Max Unit

t

d(on)

t

d(off)

Turn-on delay time

t

Rise time

r

Turn-off delay time

t

Fall time

f

= 300 V, ID = 5 A,

V

DD

= 4.7 Ω, VGS = 10 V

R

G

(see Figure 18)

16

7

­50

-

9

Table 8. Source drain diode

Symbol Parameter Test conditions Min Typ Max Unit

I

SD

I

SDM

V

SD

t

Q

I

RRM

t

Q

I

RRM

1. Pulse width limited by safe operating area

2. Pulsed: pulse duration = 300µs, duty cycle 1.5%

Source-drain current

(1)

Source-drain current (pulsed)

(2)

Forward on voltage ISD = 10 A, VGS=0 - 1.3 V

Reverse recovery time

rr

Reverse recovery charge

rr

Reverse recovery current

Reverse recovery time

rr

Reverse recovery charge

rr

Reverse recovery current

=10 A, di/dt =100 A/µs,

I

SD

= 100 V

V

DD

(see Figure 20)

= 100 V

V

DD

di/dt =100 A/µs, I

SD

= 10 A

Tj = 150 °C (see Figure 20)

-

130

-

0.69

200

-

1040A

11

1.2
12

ns
ns
ns
ns

A

ns
µC

A

ns
µC

A

6/19 Doc ID 14625 Rev 2