ST MICROELECTRONICS STP11NK50Z Datasheet

Features

Typ e V

STB11NK50Z - STP11NK50ZFP

STP11NK50Z

N-channel 500 V, 0.48 Ω , 10 A TO-220, TO-220FP, D2PA K

TM

Power MOSFET

DSS

Zener-protected SuperMESH

R

DS(on)

max

I

Pw

D

STB11NK50Z 500 V < 0.52 Ω 10 A 125 W

STP11NK50ZFP 500 V < 0.52 Ω 10 A 30 W

STP11NK50Z 500 V < 0.52 Ω 10 A 125 W

■ Extremely high dv/dt capability

■ 100% avalanche tested

■ Gate charge minimized

■ Very low intrinsic capacitances

Application

■ Switching applications

Description

The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt
capability for the most demanding applications.

3

2

1

TO-220

3

1

2

PAK

D

TO-220FP

Figure 1. Internal schematic diagram

3

2

1

Table 1. Device summary

Order codes Marking Package Packaging

STB11NK50ZT4 B11NK50Z D²PAK Tape and reel

STP11NK50ZFP P11NK50ZFP TO-220FP Tube

STP11NK50Z P11NK50Z TO-220 Tube

May 2008 Rev 6 1/16

www.st.com

16

Contents STB11NK50Z - STP11NK50ZFP - STP11NK50Z

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

2/16

STB11NK50Z - STP11NK50ZFP - STP11NK50Z Electrical ratings

1 Electrical ratings

Table 2. Absolute maximum ratings

Val ue

Symbol Parameter

I

V

V

DM

P

DS

GS

I

D

I

D

TOT

Drain-source voltage (VGS = 0) 500 V

Gate-source voltage ± 30 V

Drain current (continuous) at TC = 25 °C 10 10

Drain current (continuous) at TC=100 °C 6.3 6.3

(2)

Drain current (pulsed) 40 40

Total dissipation at TC = 25 °C 125 30 W

Derating factor 1 0.24 W/°C

V

ESD(G-S)

dv/dt

V

ISO

T

T

stg

1. Limited only by maximum temperature allowed

2. Pulse width limited by safe operating area

3. ISD ≤ 10 A, di/dt ≤ 200 A/µs, VDD ≤ V

Table 3. Thermal data

Gate source ESD (HBM-C= 100 pF,
R= 1.5 kΩ)

(3)

Peak diode recovery voltage slope 4.5 V/ns

Insulation withstand voltage (DC) -- 2500 V

Operating junction temperature

J

Storage temperature

(BR)DSS

, Tj ≤ T

JMAX

TO-220

D²PAK

TO-220FP

(1)

(1)

(1)

Unit

A

A

A

4000 V

-55 to 150 °C

.

Val ue

Symbol Parameter

R

thj-case

R

thj-a

T

Table 4. Avalanche characteristics

Thermal resistance junction-case max 1 4.2 °C/W

Thermal resistance junction-ambient max 62.5 °C/W

Maximum lead temperature for soldering

l

purpose

TO-220

D²PAK

TO-220FP

300 °C

Symbol Parameter Value Unit

I

AS

E

AS

Avalanche current, repetitive or not­repetitive (pulse width limited by Tj max)

Single pulse avalanche energy
(starting T

= 25 °C, ID=IAR, VDD = 50 V)

J

10 A

190 mJ

Unit

3/16

Electrical characteristics STB11NK50Z - STP11NK50ZFP - STP11NK50Z

2 Electrical characteristics

(T

= 25 °C unless otherwise specified)

CASE

Table 5. On/off states

Symbol Parameter Test conditions Min. Typ. Max. Unit

V

(BR)DSS

I

DSS

I

GSS

V

GS(th)

R

DS(on)

Drain-source breakdown
voltage

Zero gate voltage drain
current (VGS = 0)

Gate body leakage current

= 0)

(V

DS

Gate threshold voltage

Static drain-source on
resistance

= 1 mA, VGS= 0

I

D

V

= Max rating,

DS

V

= Max rating @125 °C

DS

= ±20 V

V

GS

= VGS, ID = 100 µA

V

DS

VGS= 10 V, ID= 4.5 A

500 V

1

50

±10 µA

33.754.5 V

0.48 0.52 Ω

Table 6. Dynamic

Symbol Parameter Test conditions Min. Typ. Max. Unit

(1)

g

fs

C

C

C

C

oss eq

Q

Q

Q

1. Pulsed: pulse duration=300µs, duty cycle 1.5%

2. C
increases from 0 to 80% V

Forward transconductance

Input capacitance

iss

Output capacitance

oss

Reverse transfer

rss

capacitance

(2)

Equivalent output

.

capacitance

g

Total gate charge
Gate-source charge

gs

Gate-drain charge

gd

is defined as a constant equivalent capacitance giving the same charging time as C

oss eq.

DSS

V

=15 V, ID = 4.5 A

DS

=25 V, f=1 MHz, VGS=0

V

DS

VGS=0, V

=400 V, ID = 11.4 A

V

DD

=10 V

V

GS

=0 to 400 V

DS

(see Figure 18)

7.7 S

1390

173

42

110 pF

49

68 nC
10
25

when VDS

oss

µA
µA

pF
pF
pF

nC
nC

4/16

STB11NK50Z - STP11NK50ZFP - STP11NK50Z Electrical characteristics

Table 7. Switching times

Symbol Parameter Test conditions Min. Typ. Max. Unit

= 250 V, ID=5.5 A,

V

t

d(on)

t

d(off)

t

r(Voff)

t

Turn-on delay time

t

Rise time

r

Turn-off delay time

t

Fall time

f

Off-voltage rise time

t

Fall time

f

Cross-over time

c

DD

= 4.7 Ω, VGS=10 V

R

G

(see Figure 19)

V

= 250 V, ID=5.5 A,

DD

= 4.7 Ω, VGS=10 V

R

G

(see Figure 19)

=400 V, ID=11.4 A,

V

DD

=4.7 Ω, VGS=10 V

R

G

(see Figure 19)

14.5
18

41
15

11.5
12
27

ns
ns

ns
ns

ns
ns
ns

Table 8. Source drain diode

Symbol Parameter Test conditions Min Typ. Max Unit

I

SD

I

SDM

V

SD

t

Q

I

RRM

1. Pulse width limited by safe operating area

2. Pulsed: pulse duration=300µs, duty cycle 1.5%

Source-drain current 10 A

(1)

Source-drain current (pulsed) 40 A

(2)

Forward on voltage

rr

Reverse recovery time
Reverse recovery charge

rr

Reverse recovery current

=10 A, VGS=0

I

SD

=10 A,

I

SD

di/dt = 100 A/µs,

=45 V, Tj=150 °C

V

DD

308

2.4
16

1.6 V

Table 9. Gate-source Zener diode

Symbol Parameter Test conditions Min. Typ. Max. Unit

(1)

BV

GSO

1. The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.

Gate-source breakdown voltage Igs=±1mA (open drain) 30 V

ns

µC

A

5/16

Electrical characteristics STB11NK50Z - STP11NK50ZFP - STP11NK50Z

2.1 Electrical characteristics (curves)

Figure 2. Safe operating area for TO-220 /

D²PAK

Figure 3. Thermal impedance for TO-220 /

D²PAK

Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP

Figure 6. Output characteristics Figure 7. Transfer characteristics

6/16

STB11NK50Z - STP11NK50ZFP - STP11NK50Z Electrical characteristics

Figure 8. Transconductance Figure 9. Static drain-source on resistance

Figure 10. Gate charge vs gate-source voltage Figure 11. Capacitance variations

Figure 12. Normalized gate threshold voltage

vs temperature

Figure 13. Normalized on resistance vs

temperature

7/16

Electrical characteristics STB11NK50Z - STP11NK50ZFP - STP11NK50Z

Figure 14. Source-drain diode forward

characteristics

Figure 16. Maximum avalanche energy vs

temperature

Figure 15. Normalized B

vs temperature

VDSS

8/16

STB11NK50Z - STP11NK50ZFP - STP11NK50Z Test circuit

3 Test circuit

Figure 17. Switching times test circuit for

resistive load

Figure 19. Test circuit for inductive load

switching and diode recovery times

Figure 18. Gate charge test circuit

Figure 20. Unclamped Inductive load test

circuit

Figure 21. Unclamped inductive waveform Figure 22. Switching time waveform

9/16

Package mechanical data STB11NK50Z - STP11NK50ZFP - STP11NK50Z

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com

10/16

STB11NK50Z - STP11NK50ZFP - STP11NK50Z Package mechanical data

TO-220 mechanical data

Dim

Min Typ Max Min Typ Max

mm inch

A 4.40 4.60 0.173 0.181
b 0.61 0.88 0.024 0.034

b1 1.14 1.70 0.044 0.066

c0.48 0.70 0.019 0.027

D 15.25 15.75 0.6 0.62

D1 1.27 0.050

E 10 10.40 0.393 0.409
e 2.40 2.70 0.094 0.106

e1 4.95 5.15 0.194 0.202

F1.23 1.32 0.048 0.051

H1 6.20 6.60 0.244 0.256

J1 2.40 2.72 0.094 0.107

L13 14 0.511 0.551

L1 3.50 3.93 0.137 0.154
L20 16.40 0.645
L3028.90 1.137

∅P 3.75 3.85 0.147 0.151

Q2.65 2.95 0.104 0.116

11/16

Package mechanical data STB11NK50Z - STP11NK50ZFP - STP11NK50Z

TO-220FP mechanical data

Dim.

A 4.40 4.60 0.173 0.181

B 2.5 2.7 0.098 0.106

D 2.5 2.75 0.098 0.108

E 0.45 0.70 0.017 0.027

F 0.75 1.00 0.0300.039

F1 1.15 1.50 0.045 0.067

F2 1.15 1.50 0.045 0.067

G4.955.200.1950.204

G1 2.40 2.70 0.094 0.106

H 10 10.40 0.393 0.409

L2 16 0.630

L3 28.6 30.6 1.126 1.204

L4 9.80 10.60 0.385 0.417

L5 2.93.6 0.114 0.141

L6 15.90 16.40 0.626 0.645

L7 99.300.354 0.366

Dia3 3.2 0.118 0.126

Min. Typ Max. Min. Typ. Max.

mm. inch

E

A

D

B

L6

Dia

H

12/16

L7

L2

L3

L5

F1

F2

F

G1

G

123

L4

7012510-I

STB11NK50Z - STP11NK50ZFP - STP11NK50Z Package mechanical data

D²PAK (TO-263) mechanical data

Dim

Min Typ Max Min Typ Max

mm inch

A 4.40 4.60 0.173 0.181

A1 0.03 0.23 0.001 0.009

b 0.70 0.93 0.027 0.037

b2 1.14 1.70 0.045 0.067

c 0.45 0.60 0.017 0.024

c2 1.23 1.360.048 0.053

D 8.95 9.350.352 0.368

D1 7.50 0.295

E 10 10.40 0.3940.409

E1 8.50 0.334

e 2.54 0.1

e1 4.88 5.28 0.1920.208

H15 15.850.5900.624

J1 2.49 2.69 0.099 0.106

L2.29 2.79 0.090 0.110
L1 1.27 1.40 0.05 0.055
L2 1.30 1.75 0.051 0.069

R 0.4 0.016
V2 0° 8°0° 8°

0079457_M

13/16

Packaging mechanical data STB11NK50Z - STP11NK50ZFP - STP11NK50Z

5 Packaging mechanical data

D2PAK FOOTPRINT

TAPE AND REEL SHIPMENT

REEL MECHANICAL DATA

DIM.

A 330 12.992

B 1.5 0.059

C 12.8 13.2 0.504 0.520

D 20.2 0795

G 24.4 26.4 0.960 1.039

N 100 3.937

T 30.4 1.197

mm inch

MIN. MAX. MIN. MAX.

TAPE MECHANICAL DATA

DIM.

A0 10.5 10.7 0.413 0.421

B0 15.7 15.9 0.618 0.626

D 1.5 1.6 0.059 0.063

D1 1.59 1.61 0.062 0.063

E 1.65 1.85 0.065 0.073

F 11.4 11. 6 0.449 0.456

K0 4.8 5.0 0.189 0.197

P0 3.9 4.1 0.153 0.161

P1 11.9 12.1 0.468 0.476

P2 1.9 2.1 0.075 0.082

R 50 1.574

T 0.25 0.35 0.0098 0.0137

W 23.7 24.3 0.933 0.956

* on sales type

mm inch

MIN. MAX. MIN. MAX.

14/16

BASE QTY BULK QTY

1000 1000

STB11NK50Z - STP11NK50ZFP - STP11NK50Z Revision history

6 Revision history

Table 10. Revision history

Date Revision Changes

08-Sep-2005 3 Complete version with curves

14-Oct-2005 4 Inserted ecopack indication

26-Mar-2006 5 New template, no content change

29-Apr-2008 6 I

value changed in Ta bl e 6

GSS

15/16

STB11NK50Z - STP11NK50ZFP - STP11NK50Z

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