STB10NK60Z/-1- STP10NK60Z
STP10NK60ZFP - STW10NK60Z
N-channel 600V - 0.65Ω - 10A - I2/D2PAK - TO-220/FP - TO-247
Zener-protected SuperMESH™ Power MOSFET
General features
V
Type
STB10NK60Z-1 650V <0.75Ω 10A 115W
STB10NK60Z 650V <0.75Ω 10A 115W
STP10NK60Z 650V <0.75Ω 10A 115W
STP10NK60ZFP 650V <0.75Ω 10A 35W
STW10NK60Z 650V <0.75Ω 10A 156W
■ Extremely high dv/dt capability
■ 100% Avalanche tested
■ Gate charge minimized
■ Very good manufacturing repeability
Description
@T
DSS
jMax
R
DS(on)ID
Pw
TO-247
TO-220FP
1
TO-263
3
2
1
TO-262
3
Internal schematic diagram
2
1
TO-220
3
3
2
1
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt
capability for the most demanding applications.
Applications
■ Switching application
Order codes
Part number Marking Package Packaging
STB10NK60Z-1 B10NK60Z I²PAK Tube
STB10NK60ZT4 B10NK60Z D²PAK Tape & reel
STP10NK60ZFP P10NK60ZFP TO-220FP Tube
STP10NK60Z P10NK60Z TO-220 Tube
STW10NK60Z W10NK60Z TO-247 Tube
September 2006 Rev 9 1/19
www.st.com
19
Contents STB10NK60Z - STB10NK60Z-1 - STP10NK60Z/FP - STW10NK60Z
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
5 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
2/19
STB10NK60Z - STB10NK60Z-1 - STP10NK60Z/FP - STW10NK60Z Electrical ratings
1 Electrical ratings
Table 1. Absolute maximum ratings
Val ue
Symbol Parameter
Drain-source voltage (VGS = 0) 600 V
DS
Gate-source voltage ± 30 V
GS
Drain current (continuous) at TC = 25°C 10 10
D
Drain current (continuous) at TC = 100°C 5.7 5.7
D
(2)
Drain current (pulsed) 36 36
Total dissipation at TC = 25°C 115 35 156 W
I
DM
P
V
V
I
I
TOT
TO-220
D²/I²PAK
TO-220FP TO-247
(1)
(1)
(1)
10 A
5.7 A
36 A
Derating factor 0.92 0.28 1.25 W/°C
Vesd(G-S) G-S ESD (HBM C=100pF, R=1.5kΩ) 4000 V
(3)
dv/dt
V
ISO
T
T
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. ISD <10A, di/dt < 200A/µs, VDD =80% V
Peak diode recovery voltage slope 4.5 V/ns
Insulation withstand volatge (DC) -- 2500 -- V
Operating junction temperature
j
Storage temperature
stg
(BR)DSS
-55 to 150 °C
Table 2. Thermal data
Unit
TO-220
I²PAK
D²PAK TO-220FP TO-247 Unit
Rthj-case Thermal resistance junction-case Max 1.09 3.6 0.8 °C/W
Rthj-pcb
Thermal resistance junction-pcb Max
(when mounted on minimum footprint)
60 °C/W
Rthj-amb Thermal resistance junction-amb Max 62.5 50 °C/W
Maximum lead temperature for soldering
T
l
purpose
300 °C
3/19
Electrical ratings STB10NK60Z - STB10NK60Z-1 - STP10NK60Z/FP - STW10NK60Z
Table 3. Avalanche characteristics
Symbol Parameter Max value Unit
I
E
E
Avalanche current, repetitive or not-repetitive
AR
(pulse width limited by Tj max)
Single pulse avalanche energy
AS
(starting Tj=25°C, ID=IAR, VDD= 50V)
Repetitive avalanche energy
AR
(pulse width limited by Tj max)
9A
300 mJ
3.5 mJ
4/19
STB10NK60Z - STB10NK60Z-1 - STP10NK60Z/FP - STW10NK60Z Electrical characteristics
2 Electrical characteristics
(Tcase =25°C unless otherwise specified)
Table 4. On /off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
Drain-source breakdown
voltage
Zero gate voltage drain
current (VGS = 0)
Gate body leakage
current (V
DS
= 0)
= 250µA, VGS= 0 600 V
I
D
= Max rating,
V
DS
= Max rating, Tj=125°C
V
DS
= ±15V, V
V
GS
DS
= 0 ±10 µA
1
50µAµA
Gate threshold voltage VDS= VGS, ID = 250 µA 3 3.75 4.5 V
Static drain-source on
resistance
= 10 V, ID= 4.5 A 0.65 0.75 Ω
V
GS
Table 5. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
Forward
(1)
C
g
fs
C
iss
C
oss
C
rss
oss eq
transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Equivalent ouput
(2)
capacitance
=15V, ID = 4.5A 7.8 S
V
DS
1370
=25V, f=1 MHz, VGS=0
V
DS
156
37
V
GS
=0, V
=0V to 480V 90 pF
DS
pF
pF
pF
Q
Q
Q
1. Pulsed: pulse duration = 300µs, duty cycle 1.5%
2. C
oss eq
increases from 0 to 80%
Total gate charge
g
Gate-source charge
gs
Gate-drain charge
gd
. is defined as a constant equivalent capacitance giving the same charging time as C
V
DD
V
GS
=480V, ID = 8A
=10V (see Figure 19)
50
10
25
70 nC
when VDS
oss
nC
nC
5/19
Electrical characteristics STB10NK60Z - STB10NK60Z-1 - STP10NK60Z/FP - STW10NK60Z
Table 6. Switching times
Symbol Parameter Test conditions Min. Typ. Max Unit
t
d(on)
t
t
d(off)
t
t
r(Voff)
t
t
Turn-on delay time
Rise time
r
Turn-off delay time
Fall time
f
Off-voltage rise time
Fall time
f
Cross-over time
c
VDD=300 V, ID=4A,
=4.7Ω, VGS=10V
R
G
(see Figure 20)
VDD=300 V, ID=4A,
RG=4.7Ω, VGS=10V
(see Figure 20)
=480 V, ID=8A,
V
DD
=4.7Ω, VGS=10V
R
G
(see Figure 20)
20
20
55
30
18
18
36
Table 7. Source drain diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
I
SDM
V
SD
Q
I
RRM
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300µs, duty cycle 1.5%
Source-drain current
SD
(1)
Source-drain current (pulsed)
(2)
Forward on voltage ISD=10A, VGS=0 1.6 V
t
Reverse recovery time
rr
Reverse recovery charge
rr
Reverse recovery current
=8A, di/dt = 100A/µs,
I
SD
VDD=40 V, Tj=150°C
1036A
570
4.3
15
ns
ns
ns
ns
ns
ns
ns
A
ns
µC
A
Table 8. Gate-source zener diode
Symbol Parameter Test conditions Min Typ Max Unit
Gate-source breakdown
(1)
BV
GSO
1. The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components
6/19
voltage
Igs=± 1mA (open drain) 30 V
Loading...