STMicroelectronics STN3NF06L Technical data

STN3NF06L

N-CHANNEL 60V - 0.07Ω - 4A SOT-223 STripFET™ II POWER MOSFET

TYPE	VDSS	RDS(on)	ID
STN3NF06L	60 V	< 0.1 Ω	4 A

■TYPICAL RDS(on) = 0.07 Ω

■EXCEPTIONAL dv/dt CAPABILITY

■AVALANCHE RUGGED TECHNOLOGY

■100% AVALANCHE TESTED

■LOW THRESHOLD DRIVE

DESCRIPTION

This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

APPLICATIONS

■DC-DC & DC-AC COVERTERS

■DC MOTOR CONTROL (DISK DRIVERS, etc.)

■SYNCHRONOUS RECTIFICATION

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SOT-223

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

	Symbol	Parameter	Value	Unit
	VDS	Drain-source Voltage (VGS = 0)	60	V
	VDGR	Drain-gate Voltage (RGS = 20 kΩ)	60	V
	VGS	Gatesource Voltage	± 16	V
	ID(∙)	Drain Current (continuous) at TC = 25°C	4	A
	ID	Drain Current (continuous) at TC = 100°C	2.9	A
	IDM(∙∙)	Drain Current (pulsed)	16	A
	Ptot	Total Dissipation at TC = 25°C	3.3	W
		Derating Factor	0.026	W/°C
	dv/dt (1)	Peak Diode Recovery voltage slope	10	V/ns
	EAS (2)	Single Pulse Avalanche Energy	200	mJ
	Tstg	Storage Temperature	-55 to 150	°C
	Tj	Operating Junction Temperature
	(∙∙) Pulse width	limited by safe operating area.	(1) ISD ≤ 3A, di/dt ≤150A/µs, VDD ≤ V(BR)DSS, Tj ≤ T	JMAX
	(∙) Current limited by the package		(2) Starting Tj = 25 oC, ID = 4A, VDD = 30V
	October 2003			1/8
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STN3NF06L

THERMAL DATA

Rthj-pcb

Rthj-pcb

Tl

Thermal Resistance Junction-PCB (*)	Max	38	°C/W
Thermal Resistance Junction-PCB (**)	Max	100	°C/W
Maximum Lead Temperature For Soldering Purpose	Typ	260	°C
(for 10 sec. 1.6 mm from case)

(*) When Mounted on FR-4 board with 1 inch2 pad, 2 oz of Cu and t [ 10 sec (**) When Mounted on minimum footprint

ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified) OFF

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
V(BR)DSS	Drain-source	ID = 250 µA, VGS = 0	60			V
	Breakdown Voltage
IDSS	Zero Gate Voltage	VDS = Max Rating			1	µA
	Drain Current (VGS = 0)	VDS = Max Rating TC = 125°C			10	µA
IGSS	Gate-body Leakage	VGS = ± 16 V			±100	nA
	Current (VDS = 0)

ON (*)

Symbol	Parameter	Test Conditions		Min.	Typ.	Max.	Unit
VGS(th)	Gate Threshold Voltage	VDS = VGS	ID = 250 µA	1		2.8	V
RDS(on)	Static Drain-source On	VGS = 10 V	ID = 1.5 A		0.07	0.10	Ω
	Resistance	VGS = 5 V	ID = 1.5 A		0.085	0.12	Ω

DYNAMIC

Symbol	Parameter			Test Conditions				Min.	Typ.	Max.	Unit
g (*)	Forward Transconductance	V	DS	= 15 V	I	D	= 1.5 A		3		S
fs
Ciss	Input Capacitance	VDS = 25V, f = 1 MHz, VGS = 0							340		pF
Coss	Output Capacitance								63		pF
Crss	Reverse Transfer								30		pF
	Capacitance

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STN3NF06L

ELECTRICAL CHARACTERISTICS (continued)

SWITCHING ON

Symbol	Parameter	Test Conditions		Min.	Typ.	Max.	Unit
td(on)	Turn-on Delay Time	VDD = 30 V	ID = 1.5 A		9		ns
tr	Rise Time	RG = 4.7 Ω	VGS = 5 V		25		ns
		(Resistive Load, Figure 1)
Qg	Total Gate Charge	VDD = 48V	ID = 3A VGS = 5V		7	9	nC
Qgs	Gate-Source Charge				1.5		nC
Qgd	Gate-Drain Charge	(see test circuit, Figure 2)			2.8		nC

SWITCHING OFF

Symbol	Parameter	Test Conditions		Min.	Typ.	Max.	Unit
td(off)	Turn-off Delay Time	VDD = 30 V	ID = 1.5 A		20		ns
tf	Fall Time	RG = 4.7Ω,	VGS = 5 V		10		ns
		(Resistive Load, Figure 1)

SOURCE DRAIN DIODE

Symbol	Parameter	Test Conditions		Min.	Typ.	Max.	Unit
ISD	Source-drain Current					4	A
ISDM (∙)	Source-drain Current (pulsed)					16	A
VSD (*)	Forward On Voltage	ISD = 4 A	VGS = 0			1.5	V
trr	Reverse Recovery Time	ISD = 4 A	di/dt = 100A/µs		50		ns
Qrr	Reverse Recovery Charge	VDD = 25 V	Tj = 150°C		88		nC
IRRM	Reverse Recovery Current	(see test circuit, Figure 3)			3.5		A

(*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. (∙)Pulse width limited by safe operating area.

Safe Operating Area	Thermal Impedance

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