STMicroelectronics STN3NF06L Technical data

STN3NF06L
N-CHANNEL 60V - 0.07- 4A SOT-223
STripFET™ II POWER MOSFET
TYPE
V
DSS
STN3NF06L 60 V < 0.1
TYPICAL R
AVALANCHE RUGGED TECHNOLOGY
100% AVALANCHE TESTED
LOW THRESHOLD DRIVE
(on) = 0.07
DS
R
DS(on)
I
D
4 A
DESCRIPTION
This Power MOSFET is the latest dev elo pment of
STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on­resistance, rugged avalanche characteristics and less critical alignment steps therefore a remark­able manufacturing reproducibility.
APPLICATIONS
DC-DC & DC-AC COVERTERS
DC MOTOR CONTROL (DISK DRIVERS, etc.)
SYNCHRONOUS RECTIFICATION
2
3
2
1
SOT-223
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
DS
V
DGR
V
GS
(
I
•)
D
I
D
(
I
••)
DM
P
tot
dv/dt
E
AS
T
stg
T
j
(
Pulse wi dth limited by safe operating area.
••)
(
Current limited by the package
•)
.
Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ)
60 V 60 V
Gate- source Voltage ± 16 V
Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C
4A
2.9 A Drain Current (pulsed) 16 A Total Dissipation at TC = 25°C
3.3 W Derating Factor 0.026 W/°C
(1)
Peak Diode Recovery voltage slope 10 V/ns
(2)
Single Pulse Avalanche Energy 200 mJ Storage Temperature Operating Junction Temperature
≤ 3A, di/dt ≤150A/µs , VDD ≤ V
(1) I
SD
(2) Starting Tj = 25 oC, ID = 4A, VDD = 30V
-55 to 150 °C
(BR)DSS
, Tj ≤ T
JMAX
1/8October 2003
STN3NF06L
THERMA L D ATA
Rthj-pcb Rthj-pcb
T
(*) When Mounted on FR-4 board with 1 inch (**) When Mounted on minimum footprint
Thermal Resistance Junction-PCB (*) Thermal Resistance Junction-PCB (**) Maximum Lead Temperature For Soldering Purpose
l
(for 10 sec. 1.6 mm from case)
2
pad, 2 oz of Cu a nd t [ 10 sec
Max Max
Typ
38 100 260
°C/W °C/W
°C
ELECTRICAL CHARACTERISTICS (T
= 25 °C unless otherwise specified)
case
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
= 250 µA, VGS = 0
D
V
= Max Rating
DS
V
= Max Rating TC = 125°C
DS
= ± 16 V
V
GS
60 V
1
10
±100 nA
ON
V
(BR)DSS
I
DSS
I
GSS
(*)
Drain-source Breakdown Voltage
Zero Gate Voltage Drain Current (V
GS
Gate-body Leakage Current (V
DS
= 0)
= 0)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
V
GS(th)
R
DS(on)
Gate Threshold Voltage Static Drain-source On
Resistance
= VGS I
DS
= 10 V ID = 1.5 A
V
GS
V
= 5 V ID = 1.5 A
GS
= 250 µA
D
1 2.8 V
0.07
0.085
0.10
0.12
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(*)
g
fs
C
iss
C
oss
C
rss
Forward Transconductance Input Capacitance
Output Capacitance Reverse Transfer Capacitance
V
= 15 V ID = 1.5 A
DS
= 25V, f = 1 MHz, VGS = 0
V
DS
3S
340
63 30
µA µA
Ω Ω
pF pF pF
2/8
STN3NF06L
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
= 30 V ID = 1.5 A
t
d(on)
Turn-on Delay Time
t
r
Rise Time
V
DD
R
= 4.7 Ω VGS = 5 V
G
(Resistive Load, Figure 1)
Q
g
Q
gs
Q
gd
Total Gate Charge Gate-Source Charge Gate-Drain Charge
= 48V ID = 3A V
V
DD
GS
(see test circuit, Figure 2)
= 5V
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
= 30 V ID = 1.5 A
t
d(off)
Turn-off Delay Time
t
f
Fall Time
V
DD
R
= 4.7Ω, V
G
GS
= 5 V
(Resistive Load, Figure 1)
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
V
SD
t
rr
Q
rr
I
RRM
(*)
Pulsed: P ul se duration = 300 µs, duty cycle 1.5 %.
(
•)Pulse width limited by s afe operating area.
Source-drain Current
(•)
Source-drain Current (pulsed)
(*)
Forward On Voltage Reverse Recovery Time
Reverse Recovery Charge Reverse Recovery Current
I
= 4 A VGS = 0
SD
= 4 A di/dt = 100A/µs
I
SD
V
= 25 V Tj = 150°C
DD
(see test circuit, Figure 3)
9
25
7
1.5
2.8
20 10
50 88
3.5
9nC
4
16
1.5 V
ns ns
nC nC
ns ns
A A
ns
nC
A
Safe Operating Area
Thermal Impedance
3/8
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