Table 19.Total current consumption with code execution in run mode at V
Table 20.Total current consumption with code execution in run mode at V
Table 21.Total current consumption in wait mode at V
Table 22.Total current consumption in wait mode at V
Table 23.Total current consumption in active halt mode at V
Table 24.Total current consumption in active halt mode at V
Table 25.Total current consumption in halt mode at V
Table 26.Total current consumption in halt mode at V
Figure 16.Typical HSI frequency variation vs V
Figure 17.Typical LSI frequency variation vs V
Figure 18.Typical V
Figure 19.Typical pull-up resistance vs V
Figure 20.Typical pull-up current vs V
Figure 21.Typ. V
Figure 22.Typ. V
Figure 23.Typ. V
Figure 24.Typ. V
Figure 25.Typ. V
Figure 26.Typ. V
Figure 27.Typ. V
Figure 28.Typ. V
Figure 29.Typ. V
Figure 30.Typ. V
Figure 37.SO8N – 8-lead, 4.9 x 6 mm, plastic small outline, 150 mils body width, package outline . 77
Figure 38.SO8N – 8-lead 4.9 x 6 mm, plastic small outline, 150 mils body width,
This datasheet contains the description of the STM8S001J3 features, pinout, electrical
characteristics, mechanical data and ordering information.
•For complete information on the STM8S microcontroller memory, registers and
peripherals, please refer to the STM8S and STM8A microcontroller families reference
manual (RM0016).
•For information on programming, erasing and protection of the internal Flash memory
please refer to the PM0051 (How to program STM8S and STM8A Flash program
memory and data EEPROM).
•For information on the debug and SWIM (single wire interface module) refer to the
STM8 SWIM communication protocol and debug module user manual (UM0470).
•For information on the STM8 core, please refer to the STM8 CPU programming manual
(PM0044).
8/85DS12129 Rev 3
STM8S001J3Description
2 Description
The STM8S001J3 8-bit microcontrollers offer 8 Kbytes of Flash program memory, plus
integrated true data EEPROM. It is referred to as low-density device in the STM8S
microcontroller family reference manual (RM0016).
The STM8S001J3 device provides the following benefits: performance, robustness and
reduced system cost.
Device performance and robustness are ensured by true data EEPROM supporting up to
100000 write/erase cycles, advanced core and peripherals made in a state-of-the-art
technology at 16
clock source, and a clock security system.
The system cost is reduced thanks to a high system integration level with internal clock
oscillators, watchdog, and brown-out reset.
Full documentation is offered as well as a wide choice of development tools.
Pin count8
MHz clock frequency, robust I/Os, independent watchdogs with separate
Table 1. STM8S001J3 features
FeaturesSTM8S001J3
Max. number of GPIOs (I/O)5
External interrupt pins5
Timer CAPCOM channels3
Timer complementary outputs1
A/D converter channels3
High-sink I/Os4
Low-density Flash program memory
(byte)
RAM (byte) 1 K
True data EEPROM (byte)128
Multi purpose timer (TIM1), SPI unidirectional, I2C, UART,
The following section intends to give an overview of the basic features of the STM8S001J3
functional modules and peripherals.
For more detailed information please refer to the corresponding family reference manual
(RM0016).
4.1 Central processing unit STM8
The 8-bit STM8 core is designed for code efficiency and performance.
It contains six internal registers which are directly addressable in each execution context, 20
addressing modes including indexed indirect and relative addressing and 80 instructions.
Architecture and registers
•Harvard architecture
•3-stage pipeline
•32-bit wide program memory bus - single cycle fetching for most instructions
•X and Y 16-bit index registers - enabling indexed addressing modes with or without
offset and read-modify-write type data manipulations
•8-bit accumulator
•24-bit program counter - 16-Mbyte linear memory space
•16-bit stack pointer - access to a 64 K-level stack
•8-bit condition code register - 7 condition flags for the result of the last instruction
Addressing
•20 addressing modes
•Indexed indirect addressing mode for look-up tables located anywhere in the address
space
•Stack pointer relative addressing mode for local variables and parameter passing
Instruction set
•80 instructions with 2-byte average instruction size
•Standard data movement and logic/arithmetic functions
•8-bit by 8-bit multiplication
•16-bit by 8-bit and 16-bit by 16-bit division
•Bit manipulation
•Data transfer between stack and accumulator (push/pop) with direct stack access
•Data transfer using the X and Y registers or direct memory-to-memory transfers
DS12129 Rev 311/85
24
Functional overviewSTM8S001J3
4.2 Single wire interface module (SWIM) and debug module (DM)
The single wire interface module and debug module permits non-intrusive, real-time incircuit debugging and fast memory programming.
SWIM
Single wire interface module for direct access to the debug module and memory
programming. The interface can be activated in all device operation modes. The maximum
data transmission speed is 145 byte/ms.
Debug module
The non-intrusive debugging module features a performance close to a full-featured
emulator. Beside memory and peripherals, also CPU operation can be monitored in realtime by means of shadow registers.
•R/W to RAM and peripheral registers in real-time
•R/W access to all resources by stalling the CPU
•Breakpoints on all program-memory instructions (software breakpoints)
As the NRST pin is not available on this device, if the SWIM pin should be used with the I/O
pin functionality, it is recommended to add a ~5 seconds delay in the firmware before
changing the functionality on the pin with SWIM functions. This action allows the user to set
the device into SWIM mode after the device power on and to be able to reprogram the
device. If the pin with SWIM functionality is set to I/O mode immediately after the device
reset, the device is unable to connect through the SWIM interface and it gets locked forever.
This initial delay can be removed in the final (locked) code.
If the initial delay is not acceptable for the application there is the option that the firmware
reenables the SWIM pin functionality under specific conditions such as during firmware
startup or during application run. Once that this procedure is done, the SWIM interface can
be used for device debug/programming.
4.3 Interrupt controller
•Nested interrupts with three software priority levels
•32 interrupt vectors with hardware priority
•Up to 5 external interrupts including TLI
•Trap and reset interrupts
4.4 Flash program memory and data EEPROM
•8 Kbytes of Flash program single voltage Flash memory
•128 byte true data EEPROM
•User option byte area
12/85DS12129 Rev 3
STM8S001J3Functional overview
Write protection (WP)
Write protection of Flash program memory and data EEPROM is provided to avoid
unintentional overwriting of memory that could result from a user software malfunction.
There are two levels of write protection. The first level is known as MASS (memory access
security system). MASS is always enabled and protects the main Flash program memory,
data EEPROM and option bytes.
To perform in-application programming (IAP), this write protection can be removed by
writing a MASS key sequence in a control register. This allows the application to modify the
content of main program memory and data EEPROM, or to reprogram the device option
bytes.
A second level of write protection, can be enabled to further protect a specific area of
memory known as UBC (user boot code). Refer to
The size of the UBC is programmable through the UBC option byte (Ta b le 12), in increments
of 1 page (64-byte block) by programming the UBC option byte in ICP mode.
This divides the program memory into two areas:
•Main program memory: 8 Kbyte minus UBC
•User-specific boot code (UBC): Configurable up to 8 Kbyte
The UBC area remains write-protected during in-application programming. This means that
the MASS keys do not unlock the UBC area. It protects the memory used to store the boot
program, specific code libraries, reset and interrupt vectors, the reset routine and usually
the IAP and communication routines.
Figure 2.
Low density
Flash program
memory
(8 Kbytes)
Figure 2. Flash memory organization
Option bytes
Data EEPROM (128 bytes)
UBC area
Remains write protected during IAP
Program memory area
Write access possible for IAP
Programmable
area from 64 bytes
(1 page) up to
8 Kbytes
(in 1 page steps)
MS36408V1
DS12129 Rev 313/85
24
Functional overviewSTM8S001J3
Read-out protection (ROP)
The read-out protection blocks reading and writing the Flash program memory and data
EEPROM memory in ICP mode (and debug mode). Once the read-out protection is
activated, any attempt to toggle its status triggers a global erase of the program memory.
Even if no protection can be considered as totally unbreakable, the feature provides a very
high level of protection for a general purpose microcontroller.
Recommendation for the device's programming:
The device's 8 Kbytes program memory is not empty on virgin devices; there is code loop
implemented on the reset vector. It is recommended to keep valid code loop in the device to
avoid the program execution from an invalid memory address (which would be any memory
address out of 8 Kbytes program memory space).
If the device's program memory is empty (0x00 content), it displays the behavior described
below:
•After the power on, the “empty” code is executed (0x0000 opcodes = instructions: NEG
(0x00, SP)) until the device reaches the end of the 8 Kbytes program memory (the end
address = 0x9FFF).
It takes around 4 milliseconds to reach the end of the 8 Kbytes memory space @2 MHz
HSI clock.
•Once the device reaches the end of the 8 Kbytes program memory, the program
continues and code from a non-existing memory is fetched and executed.
The reading of non-existing memory is a random content which can lead to the
execution of invalid instructions.
The execution of invalid instructions generates a software reset and the program starts
again. A reset can be generated every 4 milliseconds or more.
Only the “connect on-the-fly” method can be used to program the device through the SWIM
interface. The “connect under-reset” method cannot be used because the NRST pin is not
available on this device.
The “connect on-the-fly” mode can be used while the device is executing code, but if there is
a device reset (by software reset) during the SWIM connection, this connection is aborted
and it must be performed again from the debug tool. Note that the software reset occurrence
can be of every 4 milliseconds, making it difficult to successfully connect to the device's
debug tool (there is practically only one successful connection trial for every 10 attempts).
Once that a successful connection is reached, the device can be programmed with a valid
firmware without problems; therefore it is recommended that device is never erased and
that is contains always a valid code loop.
14/85DS12129 Rev 3
STM8S001J3Functional overview
4.5 Clock controller
The clock controller distributes the system clock (f
MASTER)
coming from different oscillators
to the core and the peripherals. It also manages clock gating for low power modes and
ensures clock robustness.
Features
•Clock prescaler: To get the best compromise between speed and current
consumption the clock frequency to the CPU and peripherals can be adjusted by a
programmable prescaler.
•Safe clock switching: Clock sources can be changed safely on the fly in run mode
through a configuration register. The clock signal is not switched until the new clock
source is ready. The design guarantees glitch-free switching.
•Clock management: To reduce power consumption, the clock controller can stop the
clock to the core, individual peripherals or memory.
•Master clock sources: Three different clock sources can be used to drive the master
clock:
–Up to 16 MHz high-speed user-external clock (HSE user-ext)
–16 MHz high-speed internal RC oscillator (HSI)
–128 kHz low-speed internal RC (LSI)
•Startup clock: After reset, the microcontroller restarts by default with an internal
2 MHz clock (HSI/8). The prescaler ratio and clock source can be changed by the
application program as soon as the code execution starts.
•Clock security system (CSS): This feature can be enabled by software. If an HSE
clock failure occurs, the internal RC (16 MHz/8) is automatically selected by the CSS
and an interrupt can optionally be generated.
•Configurable main clock output (CCO): This outputs an external clock for use by the
application.
Table 2. Peripheral clock gating bit assignments in CLK_PCKENR1/2 registers
For efficient power management, the application can be put in one of four different lowpower modes. You can configure each mode to obtain the best compromise between the
lowest power consumption, the fastest start-up time and available wakeup sources.
•Wait mode: In this mode, the CPU is stopped, but peripherals are kept running. The
wakeup is performed by an internal or external interrupt or reset.
•Active halt mode with regulator on: In this mode, the CPU and peripheral clocks are
stopped. An internal wakeup is generated at programmable intervals by the auto wake
up unit (AWU). The main voltage regulator is kept powered on, so current consumption
is higher than in active halt mode with regulator off, but the wakeup time is faster.
Wakeup is triggered by the internal AWU interrupt, external interrupt or reset.
•Active halt mode with regulator off: This mode is the same as active halt with
regulator on, except that the main voltage regulator is powered off, so the wake up time
is slower.
•Halt mode: In this mode the microcontroller uses the least power. The CPU and
peripheral clocks are stopped, the main voltage regulator is powered off. Wakeup is
triggered by external event or reset.
4.7 Watchdog timers
The watchdog system is based on two independent timers providing maximum security to
the applications.
Activation of the watchdog timers is controlled by option bytes or by software. Once
activated, the watchdogs cannot be disabled by the user program without performing a
reset.
Window watchdog timer
The window watchdog is used to detect the occurrence of a software fault, usually
generated by external interferences or by unexpected logical conditions, which cause the
application program to abandon its normal sequence.
The window function can be used to trim the watchdog behavior to match the application
perfectly.
The application software must refresh the counter before time-out and during a limited time
window.
A reset is generated in two situations:
1.Timeout: at 16 MHz CPU clock the time-out period can be adjusted between 75 µs up
to 64
ms.
2. Refresh out of window: the down-counter is refreshed before its value is lower than the
one stored in the window register.
16/85DS12129 Rev 3
STM8S001J3Functional overview
Independent watchdog timer
The independent watchdog peripheral can be used to resolve processor malfunctions due to
hardware or software failures.
It is clocked by the 128 kHz LSI internal RC clock source, and thus stays active even in case
of a CPU clock failure
The IWDG time base spans from 60 µs to 1 s.
4.8 Auto wakeup counter
•Used for auto wakeup from active halt mode
•Clock source: internal 128 kHz internal low frequency RC oscillator or external clock
•LSI clock can be internally connected to TIM1 input capture channel 1 for calibration
4.9 TIM1 - 16-bit advanced control timer
This is a high-end timer designed for a wide range of control applications. With its
complementary outputs, dead-time control and center-aligned PWM capability, the field of
applications is extended to lighting and half-bridge driver.
•16-bit up, down and up/down autoreload counter with 16-bit prescaler
•Four independent capture/compare channels (CAPCOM) configurable as input
capture, output compare, PWM generation (edge and center aligned mode) and single
pulse mode output
•Synchronization module to control the timer with external signals
•Break input to force the timer outputs into a defined state
•One complementary output (CH1 with CH1N option) with adjustable dead time
•Interrupt sources: 3 x input capture/output compare, 1 x overflow/update, 1 x break
4.10 TIM2 - 16-bit general purpose timer
•16-bit autoreload (AR) up-counter
•15-bit prescaler adjustable to fixed power of 2 ratios 1…32768
•Interrupt sources: 3 x input capture/output compare, 1 x overflow/update
4.11 TIM4 - 8-bit basic timer
•8-bit autoreload, adjustable prescaler ratio to any power of 2 from 1 to 128
•Clock source: CPU clock
•Interrupt source: 1 x overflow/update
DS12129 Rev 317/85
24
Functional overviewSTM8S001J3
Counter
Timer
TIM1 16Any integer from 1 to 65536Up/down21
TIM2 16Any power of 2 from 1 to 32768Up30No
TIM48Any power of 2 from 1 to 128Up00No
1. TIM1_CH2N with TIM1_CH1
size
(bits)
Prescaler
Table 3. TIM timer features
Counting
mode
CAPCOM
channels
Complem.
outputs
(1)
4.12 Analog-to-digital converter (ADC1)
STM8S001J3 contains a 10-bit successive approximation A/D converter (ADC1) with up to
three external and one internal multiplexed input channels and the following main features:
•Input voltage range: 0 to V
•Conversion time: 14 clock cycles
•Single and continuous, buffered continuous conversion modes
•Buffer size (10 x 10 bits)
•Scan mode for single and continuous conversion of a sequence of channels
•Analog watchdog capability with programmable upper and lower thresholds
•Analog watchdog interrupt
•Internal reference voltage on channel AIN7
•External trigger input
•Trigger from TIM1 TRGO
•End of conversion (EOC) interrupt
DDA
Ext.
trigger
No
Timer
synchr-
onization/
chaining
No
next paragraph :
Internal bandgap reference voltage
Channel AIN7 is internally connected to the internal bandgap reference voltage. The internal
bandgap reference is constant and can be used, for example, to monitor V
determine the absolute voltage on external input channels. It is independent of variations in
V
and ambient temperature TA.
DD
4.13 Communication interfaces
The following communication interfaces are implemented:
This section presents the pinouts and pin descriptions for STM8S001J3. Tab le 4 introduces
the legends and abbreviations that are used in the upcoming subsections.
TypeI = input, O = output, S = power supply
Level
Output speed
Port and control
configuration
Reset state
Table 4. Legend/abbreviations for STM8S001J3 pin description tables
InputCM = CMOS
OutputHS = high sink
O1 = slow (up to 2 MHz)
O2 = fast (up to 10 MHz)
O3 = fast/slow programmability with slow as default state after reset
O4 = fast/slow programmability with fast as default state after reset
Inputfloat = floating, wpu = weak pull-up
OutputT = true open drain, OD = open drain, PP = push pull
Bold x
(pin state after internal reset release)
Unless otherwise specified, the pin state is the same during the reset phase
and after the internal reset release.
5.1 STM8S001J3 SO8N pinout and pin description
Figure 3 presents the STM8S001J3 pinout image and Tab le 5 below presents the device’s
pins description.
Figure 3. STM8S001J3 SO8N pinout
1. [ ] Alternative function option (if the same alternate function is shown twice, it indicated an exclusive choice
and not a duplication of the function).
DS12129 Rev 321/85
24
Pinouts and pin descriptionsSTM8S001J3
Pin no.
SO8N
Pin name Type
PD6/ AIN6/
UART1 _RX
(2)
Table 5. STM8S001J3 pin description
Input Output
High
(1)
sink
Speed
Ext. interr.
I/O X
wpu
floating
XX HS O3 XX Port D6
OD PP
Main
function
(after
reset)
Default
alternate
function
Analog input
6/ UART1
data receive
1
External
clock input
PA1/ OSCIN
(3)
I/O X X X - O1 X X Port A1
(HSE clock)
2VSS/VSSA S - ------Ground-
3VCAP S - -- - ---
1.8 V regulator
capacitor
4VDD/VDDA S - ------Power supply-
PA3/ TIM2_ CH3
[SPI_ NSS]\
[UART1_TX]
(2)
I/O X X X HS O3 X X Port A3
Timer 2
channel 3
5
PB5/ I2C_ SDA
[TIM1_ BKIN]
PB4/ I2C_ SCL
6
/[ADC_ETR]
PC3/ TIM1_CH3
[TLI]
[TIM1_ CH1N]
7
PC4/ CLK_CCO/
TIM1_
CH4/[AIN2]/
[TIM1_ CH2N]
PC5/ SPI_SCK
[TIM2_ CH1]
I/O X
- X - O1 T
I/O X- X - O1 T
I/O X
I/O X
I/O X
X X HS O3 X X Port C3
X X HS O3 X X Port C4
X X HS O3 X X Port C5 SPI clock
(4)
-Port B5I2C data
(4)
- Port B4 I2C clock
Timer 1 channel 3
Configurable
clock
output/Timer
1 - channel 4
Alternate
function
after remap
[option bit]
-
-
-
SPI master/
slave select
[AFR1]
UART1 data
transmit
[AFR1 and
AFR0]
Timer 1 break input
[AFR4]
ADC
external
trigger
[AFR4]
To p le v e l
interrupt
[AFR3]
Timer 1 inverted
channel 1
[AFR7]
Analog input
2 [AFR2],
Timer 1 inverted
channel 2
[AFR7]
Timer 2 channel 1
[AFR0]
22/85DS12129 Rev 3
STM8S001J3Pinouts and pin descriptions
Table 5. STM8S001J3 pin description (continued)
Pin no.
SO8N
Pin name Type
PC6/ SPI_MOSI
[TIM1_ CH1]
PD1/ SWIM
(5)
I/O X
I/O XX
Input Output
High
(1)
wpu
floating
(5)
X X HS O3 X X Port C6
(5)
sink
Ext. interr.
X HS O4 X X Port D1
OD PP
Speed
Main
function
(after
reset)
Default
alternate
function
SPI master
out/slave in
SWIM data
interface
Alternate
function
after remap
[option bit]
Timer 1 channel 1
[AFR0]
-
Analog input
8
PD3/ AIN4/
TIM2_ CH2/
ADC_ ETR
I/O X
(5)
X X HS O3 X X Port D3
4/ Timer 2 channel
2/ADC
external
-
trigger
PD5/ AIN5/
UART1 _TX
1. I/O pins used simultaneously for high current source/sink must be uniformly spaced around the package. In addition, the total
driven current must respect the absolute maximum ratings.
2. By remapping UART1_TX (AFR0=1 and AFR1=1) to PA3 the UART1_RX alternate function on PD6 becomes unavailable.
UART1 can be then used only in Single wire half-duplex mode or in Smartcard-reader emulation mode.
3. When the MCU is in halt/active-halt mode, PA1 is automatically configured in input weak pull-up and cannot be used for
waking up the device. In this mode, the output state of PA1 is not driven. It is recommended d to use PA1 only in input mode
if halt/active-halt is used in the application.
4. In the open-drain output column, “T” defines a true open-drain I/O (P-buffer, weak pull-up, and protection diode to VDD are
not implemented). Although PB5 itself is a true open drain GPIO with its respective internal circuitry and characteristics, V
maximum of the pin number 5 is limited by the standard GPIO PA3 which is also bonded to pin number 5.
5. The PD1 pin is in input pull-up during the reset phase and after internal reset release. This PD1 default state influences all
GPIOs connected in parallel on pin# 8 (PC6, PD3, PD5).
PF4 GPIOs should be configured after device reset in output push-pull mode with output
low-state to reduce the device’s consumption and to improve its EMC immunity. The GPIOs
mentioned above are not connected to pins, and they are in input-floating mode after a
device reset.
Note:As several pins provide a connection to multiple GPIOs, the mode selection for any of those
GPIOs impacts all the other GPIOs connected to the same pin. The user is responsible for
the proper setting of the GPIO modes in order to avoid conflicts between GPIOs bonded to
the same pin (including their alternate functions). For example, pull-up enabled on PD1 is
also seen on PC6, PD3 and PD5. Push-pull configuration of PC3 is also seen on PC4 and
PC5, etc.
DS12129 Rev 323/85
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Pinouts and pin descriptionsSTM8S001J3
5.2 Alternate function remapping
As shown in the rightmost column of the pin description table, some alternate functions can
be remapped at different I/O ports by programming one of eight AFR (alternate function
remap) option bits. Refer to
the default alternate function is no longer available.
To use an alternate function, the corresponding peripheral must be enabled in the peripheral
registers.
Alternate function remapping does not effect GPIO capabilities of the I/O ports (see the
GPIO section of the family reference manual, RM0016).
Section 8: Option bytes. When the remapping option is active,
24/85DS12129 Rev 3
STM8S001J3Memory and register map
6 Memory and register map
6.1 Memory map
Figure 4. Memory map
0x00 0000
0x00 03FF
0x00 0800
0x00 4000
0x00 407F
0x00 47FF
0x00 4800
0x00 480A
0x00 480B
0x00 4FFF
0x00 5000
0x00 57FF
0x00 5800
RAM
(1 Kbyte)
513 byte stack
Reserved
Data EEPROM
Reserved
Option bytes
Reserved
GPIO and periph. reg.
Reserved
0x00 7EFF
0x00 7F00
0x00 7FFF
0x00 8000
0x00 807F
0x00 8080
0x00 9FFF
0x00 A000
CPU/SWIM/debug/ITC
registers
32 interrupt vectors
Flash program memory
(8 Kbyte)
Reserved
0x02 7FFF
DS12129 Rev 325/85
MS36410V1
36
Memory and register mapSTM8S001J3
Tabl e 6 lists the boundary addresses for each memory size. The top of the stack is at the
RAM end address in each case.
Flash program memory8 K0x00 80000x00 9FFF
Data EEPROM1280x00 40000x00 407F
Table 6. Flash, Data EEPROM and RAM boundary addresses
Memory areaSize (byte)Start addressEnd address
RAM1 K0x00 00000x00 03FF
6.2 Register map
6.2.1 I/O port hardware register map
AddressBlockRegister labelRegister name
0x00 5000
Table 7. I/O port hardware register map
Reset
status
PA_ODRPort A data output latch register0x00
0x00 5001PA_IDRPort A input pin value register0xXX
0x00 5002PA_DDRPort A data direction register0x00
Port A
0x00 5003PA_CR1Port A control register 10x00
0x00 5004PA_CR2Port A control register 20x00
0x00 5005
PB_ODRPort B data output latch register0x00
0x00 5006PB_IDRPort B input pin value register0xXX
0x00 5007PB_DDRPort B data direction register0x00
Port B
0x00 5008PB_CR1Port B control register 10x00
0x00 5009PB_CR2Port B control register 20x00
0x00 500A
PC_ODRPort C data output latch register0x00
0x00 500BPB_IDRPort C input pin value register0xXX
0x00 500CPC_DDRPort C data direction register0x00
Port C
0x00 500DPC_CR1Port C control register 10x00
0x00 500EPC_CR2Port C control register 20x00
0x00 500F
PD_ODRPort D data output latch register0x00
0x00 5010PD_IDRPort D input pin value register0xXX
0x00 5011PD_DDRPort D data direction register0x00
Port D
0x00 5012PD_CR1Port D control register 10x02
(1)
(1)
(1)
(1)
0x00 5013PD_CR2Port D control register 20x00
26/85DS12129 Rev 3
STM8S001J3Memory and register map
Table 7. I/O port hardware register map (continued)
AddressBlockRegister labelRegister name
0x00 5014
PE_ODRPort E data output latch register0x00
0x00 5015PE_IDRPort E input pin value register0xXX
0x00 5016PE_DDRPort E data direction register0x00
Port E
0x00 5017PE_CR1Port E control register 10x00
0x00 5018PE_CR2Port E control register 20x00
0x00 5019
PF_ODRPort F data output latch register0x00
0x00 501APF_IDRPort F input pin value register0xXX
0x00 501BPF_DDRPort F data direction register0x00
Port F
0x00 501CPF_CR1Port F control register 10x00
0x00 501DPF_CR2Port F control register 20x00
1. Depends on the external circuitry.
6.2.2 General hardware register map
Reset
status
(1)
(1)
DS12129 Rev 327/85
36
Memory and register mapSTM8S001J3
AddressBlockRegister labelRegister name
0x00 501E to
0x00 5059
0x00 505A
Table 8. General hardware register map
Reset
status
Reserved area (60 byte)
FLASH_CR1Flash control register 10x00
0x00 505BFLASH_CR2Flash control register 20x00
0x00 505CFLASH_NCR2Flash complementary control register 20xFF
Option bytes contain configurations for device hardware features as well as the memory
protection of the device. They are stored in a dedicated block of the memory. Except for the
ROP (read-out protection) byte, each option byte has to be stored twice, in a regular form
(OPTx) and a complemented one (NOPTx) for redundancy.
Option bytes can be modified in ICP mode (via SWIM) by accessing the EEPROM address
shown in
application in IAP mode, except the ROP option that can only be modified in ICP mode (via
SWIM).
Refer to the STM8S Flash programming manual (PM0051) and STM8 SWIM
communication protocol and debug module user manual (UM0470) for information on SWIM
programming procedures.
Table 11: Option bytes below. Option bytes can also be modified ‘on the fly’ by the
0xAA: Enable readout protection (write access via SWIM protocol)
Note: Refer to the family reference manual (RM0016) section on
Flash/EEPROM memory readout protection for details.
DS12129 Rev 337/85
39
Option bytesSTM8S001J3
Table 12. Option byte description (continued)
Option byte no.Description
UBC[7:0] User boot code area
0x00: no UBC, no write-protection
0x01: Pages 0 defined as UBC, memory write-protected
0x02: Pages 0 to 1 defined as UBC, memory write-protected
OPT1
OPT2
OPT3
Page 0 and page 1 contain the interrupt vectors.
...
0x7F: Pages 0 to 126 defined as UBC, memory write-protected
Other values: Pages 0 to 127 defined as UBC, memory-write protected.
Note: Refer to the family reference manual (RM0016) section on
Flash/EEPROM write protection for more details.
AFR[7:0]
Refer to the following section for alternate function remapping descriptions
of bits [7:2] and [1:0] respectively.
Table 13. STM8S001J3 alternate function remapping bits for 8-pin devices
Option byte numberDescription
AFR7Alternate function remapping option 7
0: AFR7 remapping option inactive: default alternate function
1: Port C3 alternate function = TIM1_CH1N; port C4 alternate function =
TIM1_CH2N.
AFR6 Alternate function remapping option 6
Reserved.
AFR5 Alternate function remapping option 5
Reserved.
AFR4 Alternate function remapping option 4
0: AFR4 remapping option inactive: default alternate function
1: Port B4 alternate function = ADC_ETR; port B5 alternate function =
TIM1_BKIN.
AFR3 Alternate function remapping option 3
OPT2
0: AFR3 remapping option inactive: default alternate function
1: Port C3 alternate function = TLI.
AFR2 Alternate function remapping option 2
0: AFR2 remapping option inactive: default alternate function
1: Port C4 alternate function = AIN2.
AFR1 Alternate function remapping option 1
0: AFR1 remapping option inactive: default alternate function
1: If AFR0=0: Port A3 alternate function = SPI_NSS.
If AFR0=1: Port A3 alternate function = UART_TX; port D6 alternate
function UART_RX unavailable.
AFR0 Alternate function remapping option 0
0: AFR0 remapping option inactive: Default alternate functions
1: Port C5 alternate function = TIM2_CH1; port C6 alternate function =
TIM1_CH1.
1. Refer to the pinout description.
2. Do not use more than one remapping option in the same port.
(2)
(2)
(1)
(1)
(1)
(1)
(1)
(1)
.
DS12129 Rev 339/85
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Electrical characteristicsSTM8S001J3
50 pF
STM8 pin
9 Electrical characteristics
9.1 Parameter conditions
Unless otherwise specified, all voltages are referred to VSS.
9.1.1 Minimum and maximum values
Unless otherwise specified the minimum and maximum values are guaranteed in the worst
conditions of ambient temperature, supply voltage and frequencies by tests in production on
100% of the devices with an ambient temperature at T
the selected temperature range).
Data based on characterization results, design simulation and/or technology characteristics
are indicated in the table footnotes and are not tested in production. Based on
characterization, the minimum and maximum values refer to sample tests and represent the
mean value plus or minus three times the standard deviation (mean ± 3
9.1.2 Typical values
= 25 °C and TA = T
A
Σ).
Amax
(given by
Unless otherwise specified, typical data are based on TA = 25 °C, V
only as design guidelines and are not tested.
Typical ADC accuracy values are determined by characterization of a batch of samples from
a standard diffusion lot over the full temperature range, where 95% of the devices have an
error less than or equal to the value indicated
9.1.3 Typical curves
Unless otherwise specified, all typical curves are given only as design guidelines and are
not tested.
9.1.4 Loading capacitor
The loading conditions used for pin parameter measurement are shown in Figure 5.
(mean ± 2 Σ).
Figure 5. Pin loading conditions
= 5 V. They are given
DD
9.1.5 Pin input voltage
The input voltage measurement on a pin of the device is described in Figure 6.
40/85DS12129 Rev 3
STM8S001J3Electrical characteristics
V
IN
STM8 pin
Figure 6. Pin input voltage
9.2 Absolute maximum ratings
Stresses above the absolute maximum ratings listed in Tab le 14: Voltage characteristics,
Tabl e 15: Current characteristics, and Tab le 16: Thermal characteristics may cause
permanent damage to the device. These are stress ratings only and functional operation of
the device at these conditions is not implied. Exposure to maximum rating conditions for
extended periods may affect device reliability.
Device mission profile (application conditions) is compliant with JEDEC JESD47
Qualification Standard, extended mission profiles are available on demand.
Table 14. Voltage characteristics
SymbolRatingsMinMaxUnit
V
- VSSSupply voltage
DDx
Input voltage on true open drain pins
V
IN
Input voltage on any other pin
(1)
(2)
(2)
-0.36.5
V
- 0.36.5
SS
V
- 0.3V
SS
DD
+ 0.3
see Absolute maximum
V
ESD
Electrostatic discharge voltage
ratings (electrical
sensitivity) on page 75
1. All power (VDD) and ground (VSS) pins must always be connected to the external power supply
2. I
must never be exceeded. This is implicitly insured if VIN maximum is respected. If VIN maximum
INJ(PIN)
cannot be respected, the injection current must be limited externally to the I
injection is induced by V
there is no positive injection current, and the corresponding V
while a negative injection is induced by VIN<VSS. For true open-drain pads,
IN>VDD
maximum must always be respected
IN
value. A positive
INJ(PIN)
V
-
DS12129 Rev 341/85
76
Electrical characteristicsSTM8S001J3
SymbolRatings Max.
I
VDD
I
VSS
Total current into V
Total current out of V
Table 15. Current characteristics
power lines (source)
DD
ground lines (sink)
SS
(2)
(2)
(1)
100
80
Output current sunk by any I/O and control pin20
I
IO
(3)(4)
I
INJ(PIN)
ΣI
INJ(PIN)
1. Guaranteed by characterization results.
2. All power (VDD) and ground (VSS) pins must always be connected to the external supply.
3. I
4. ADC accuracy vs. negative injection current: Injecting negative current on any of the analog input pins
5. When several inputs are submitted to a current injection, the maximum ΣI
must never be exceeded. This is implicitly insured if VIN maximum is respected. If VIN maximum
INJ(PIN)
cannot be respected, the injection current must be limited externally to the I
injection is induced by V
there is no positive injection current, and the corresponding VIN maximum must always be respected
should be avoided as this significantly reduces the accuracy of the conversion being performed on another
analog input. It is recommended to add a Schottky diode (pin to ground) to standard analog pins which may
potentially inject negative current. Any positive injection current within the limits specified for I
ΣI
INJ(PIN)
positive and negative injected currents (instantaneous values). These results are based on characterization
with
Σ
I
INJ(PIN)
Output current source by any I/Os and control pin-20
Injected current on OSCIN pin±4
Injected current on any other pin
(3)
Total injected current (sum of all I/O and control pins)
while a negative injection is induced by VIN<VSS. For true open-drain pads,
IN>VDD
in the I/O port pin characteristics section does not affect the ADC accuracy.
maximum current injection on four I/O port pins of the device.
(5)
(5)
INJ(PIN)
is the absolute sum of the
INJ(PIN)
±4
±20
value. A positive
INJ(PIN)
Unit
mA
and
Table 16. Thermal characteristics
SymbolRatings ValueUnit
T
STG
T
J
Storage temperature range-65 to 150
Maximum junction temperature150
°C
42/85DS12129 Rev 3
STM8S001J3Electrical characteristics
16
12
8
4
0
2.95
4.0
5.0
5.5
f
CPU (MHz)
Functionality guaranteed
@T
A -40 to 125 °C
Supply voltage
MSv46305V1
Functionality
not guaranteed
in this area
9.3 Operating conditions
The device must be used in operating conditions that respect the parameters in Tab le 17. In
addition, full account must be taken of all physical capacitor characteristics and tolerances.
SymbolParameter ConditionsMinMaxUnit
Table 17. General operating conditions
V
f
CPU
V
CAP
DD
Internal CPU clock frequency -0 16MHz
Standard operating voltage-2.955.5V
C
: capacitance of external
EXT
capacitor
(1)
ESR of external capacitor
At 1 MHz
-4703300nF
(2)
-0.3ohm
ESL of external capacitor-15nH
Power dissipation at
(3)
P
D
T
T
TA = 125° C
Ambient temperatureMaximum power dissipation -40125
A
Junction temperature range--40130
J
1. Care should be taken when selecting the capacitor, due to its tolerance, as well as the parameter
dependency on temperature, DC bias and frequency in addition to other factors. The parameter must be
respected for the full application range.
2. This frequency of 1 MHz as a condition for V
3. To calculate P
characteristics on page 79) with the value for T
Table 49: Thermal characteristics.
), use the formula P
Dmax(TA
Figure 7. f
SO8N-49mW
parameters is given by the design of the internal regulator.
CAP
= (T
Dmax
- TA)/Θ
Jmax
given in Table 17 above and the value for Θ
Jmax
CPUmax
versus VDD
(see Section 10.2: Thermal
JA
given in
JA
°C
DS12129 Rev 343/85
76
Electrical characteristicsSTM8S001J3
Table 18. Operating conditions at power-up/power-down
SymbolParameterConditionsMinTyp
VDD rise time rate-2-∞
t
VDD
t
TEMP
V
IT+
V
IT-
V
HYS(BOR)
1. Reset is always generated after a t
minimum operating voltage (V
fall time rate
V
DD
Reset release
delay
Power-on reset
threshold
Brown-out reset
threshold
Brown-out reset
hysteresis
(1)
delay. The application must ensure that VDD is still above the
TEMP
min) when the t
DD
-2-∞
rising--1.7ms
V
DD
-2.62.72.85V
-2.52.652.8V
--70-mV
delay has elapsed.
TEMP
MaxUnit
µs/V
44/85DS12129 Rev 3
STM8S001J3Electrical characteristics
MSv36488V1
ESR
RLeak
ESL
C
9.3.1 VCAP external capacitor
Stabilization for the main regulator is achieved connecting an external capacitor C
V
CAP
pin. C
is specified in Table 17. Care should be taken to limit the series inductance
EXT
to less than 15 nH.
Figure 8. External capacitor C
1. Legend: ESR is the equivalent series resistance and ESL is the equivalent inductance.
9.3.2 Supply current characteristics
The current consumption is measured as described in Section 9.1.5: Pin input voltage.
Total current consumption in run mode
The MCU is placed under the following conditions:
•All I/O pins in input mode with a static value at VDD or VSS (no load)
•All peripherals are disabled (clock stopped by Peripheral Clock Gating registers)
except if explicitly mentioned.
EXT
EXT
to the
Subject to general operating conditions for VDD and TA.
Table 19. Total current consumption with code execution in run mode at VDD = 5 V
SymbolParameterConditionsTypMax
= f
f
CPU
MASTER
Supply
current in
run mode,
f
CPU
= f
MASTER
code
I
DD(RUN)
executed
from RAM
= f
f
CPU
MASTER
15.625 kHz
= f
f
CPU
MASTER
= f
f
CPU
MASTER
Supply
current in
run mode,
code
executed
from Flash
1. Guaranteed by characterization results.
f
= f
CPU
MASTER
= f
f
CPU
MASTER
f
= f
CPU
MASTER
15.625 kHz
= f
f
CPU
MASTER
= 16 MHz
/128 = 125 kHz
/128 =
= 128 kHzLSI RC osc. (128 kHz)0.410.55
= 16 MHz
= 2 MHzHSI RC osc. (16 MHz/8)
/128 = 125 kHzHSI RC osc. (16 MHz)0.720.9
/128 =
= 128 kHzLSI RC osc. (128 kHz)0.420.57
HSE user ext. clock (16 MHz)22.35
HSI RC osc. (16 MHz)1.72
HSE user ext. clock (16 MHz)0.86-
HSI RC osc. (16 MHz)0.70.87
HSI RC osc. (16 MHz/8)0.460.58
HSE user ext. clock (16 MHz)4.34.75
HSI RC osc.(16 MHz)3.74.5
(2)
0.841.05
HSI RC osc. (16 MHz/8)0.460.58
(1)
Unit
mA
DS12129 Rev 345/85
76
Electrical characteristicsSTM8S001J3
2. Default clock configuration measured with all peripherals off.
Table 20. Total current consumption with code execution in run mode at VDD = 3.3 V
SymbolParameterConditionsTypMax
(1)
Unit
f
CPU
= f
MASTER
= 16 MHz
Supply
current in
run mode,
CPU
= f
MASTER
/128 = 125 kHz
f
code
I
DD(RUN)
executed
from RAM
f
= f
CPU
MASTER
15.625 kHz
f
= f
CPU
MASTER
= f
f
CPU
MASTER
/128 =
= 128 kHzLSI RC osc. (128 kHz)0.410.55
= 16 MHz
Supply
current in
run mode,
code
executed
from Flash
1. Guaranteed by characterization results.
2. Default clock configuration, measured with all peripherals off.
= f
f
CPU
MASTER
= f
f
CPU
MASTER
= f
f
CPU
MASTER
15.625 kHz
= f
f
CPU
MASTER
= 2 MHzHSI RC osc. (16 MHz/8)
/128 = 125 kHzHSI RC osc. (16 MHz)0.720.9
/128 =
= 128 kHzLSI RC osc. (128 kHz)0.420.57
HSE user ext. clock (16 MHz)22.3
HSI RC osc. (16 MHz)1.52
HSE user ext. clock (16 MHz)0.81-
HSI RC osc. (16 MHz)0.70.87
HSI RC osc. (16MHz/8)0.460.58
HSE user ext. clock (16 MHz)3.94.7
HSI RC osc. (16 MHz)3.74.5
(2)
0.841.05
HSI RC osc. (16 MHz/8)0.460.58
mA
46/85DS12129 Rev 3
STM8S001J3Electrical characteristics
Total current consumption in wait mode
Table 21. Total current consumption in wait mode at VDD = 5 V
SymbolParameterConditionsTypMax
(1)
Unit
f
= f
CPU
MASTER
I
DD(WFI)
Supply
current in
wait mode
f
f
CPU
CPU
= f
= f
MASTER
MASTER
15.625 kHz
f
= f
CPU
MASTER
1. Guaranteed by characterization results.
2. Default clock configuration measured with all peripherals off.
Table 22. Total current consumption in wait mode at VDD = 3.3 V
= 16 MHz
HSI RC osc. (16 MHz)0.891.1
/128 = 125 kHzHSI RC osc. (16 MHz)0.70.88
/128 =
HSI RC osc. (16 MHz/8)
(2)
0.450.57
= 128 kHzLSI RC osc. (128 kHz)0.40.54
SymbolParameterConditionsTypMax
HSE user ext. clock (16 MHz)1.11.3
HSE user ext. clock (16 MHz)1.11.3
= f
f
CPU
MASTER
I
DD(WFI)
Supply
current in
wait mode
= f
f
CPU
MASTER
f
= f
CPU
MASTER
15.625 kHz
f
= f
CPU
MASTER
15.625 kHz
1. Guaranteed by characterization results.
2. Default clock configuration measured with all peripherals off.
= 16 MHz
HSI RC osc. (16 MHz)0.891.1
/128 = 125 kHzHSI RC osc. (16 MHz)0.70.88
/128 =
/128 =
HSI RC osc. (16 MHz/8)
LSI RC osc. (128 kHz)0.40.54
(2)
0.450.57
(1)
mA
Unit
mA
DS12129 Rev 347/85
76
Electrical characteristicsSTM8S001J3
Total current consumption in active halt mode
Table 23. Total current consumption in active halt mode at VDD = 5 V
Conditions
SymbolParameter
Supply current
I
DD(AH)
in active halt
mode
Main
voltage
regulator
(2)
(MVR)
On
Flash mode
(3)
Operating mode
Power-down
mode
Clock source
HSE user
external clock
(16 MHz)
LSI RC oscillator
(128 kHz)
HSE user
external clock
(16 MHz)
LSI RC oscillator
(128 kHz)
Max at
Typ
85°C
1030--
200260300
970--
150200230
(1)
Max at
125°C
(1)
Unit
µA
Operating mode
Off
Power-down
mode
1. Guaranteed by characterization results.
2. Configured by the REGAH bit in the CLK_ICKR register.
3. Configured by the AHALT bit in the FLASH_CR1 register.
Table 24. Total current consumption in active halt mode at VDD = 3.3 V
Conditions
SymbolParameter
Main voltage
regulator
(2)
(MVR)
Flash mode
Operating mode
On
Power-down
mode
I
DD(AH)
Supply
current in
active halt
mode
Operating mode
Off
Power-down
mode
1. Guaranteed by characterization results.
2. Configured by the REGAH bit in the CLK_ICKR register.
3. Configured by the AHALT bit in the FLASH_CR1 register.
LSI RC oscillator
6685110
(128 kHz)
(3)
Clock source
HSE user external clock
(16 MHz)
102040
Typ
550--
LSI RC osc. (128 kHz)200260290
HSE user external
clock(16 MHz)
970--
LSI RC osc. (128 kHz)150200230
6680105
LSI RC osc. (128 kHz)
101835
Max
at
85°
(1)
C
Max
at
125°
(1)
C
Unit
µA
48/85DS12129 Rev 3
STM8S001J3Electrical characteristics
Total current consumption in halt mode
Table 25. Total current consumption in halt mode at VDD = 5 V
Max at
(1)
Max at
125°C
Max at
125°
C
SymbolParameterConditionsTyp
I
DD(H)
1. Guaranteed by characterization results.
Supply current in halt
mode
Table 26. Total current consumption in halt mode at VDD = 3.3 V
Flash in operating mode,
HSI clock after wakeup
Flash in power-down mode,
HSI clock after wakeup
6375105
6.02055
SymbolParameterConditionsTyp
Flash in operating mode, HSI
clock after wakeup
I
DD(H)
Supply current in halt mode
Flash in power-down mode, HSI
clock after wakeup
1. Guaranteed by characterization results.
Max at
(1)
85°C
85° C
6075100
4.51730
Low-power mode wakeup times
SymbolParameterConditionsTypMax
t
WU(WFI)
t
WU(AH)
t
WU(H)
1. Guaranteed by design.
2. t
WU(WFI)
3. Measured from interrupt event to interrupt vector fetch.
4. Configured by the REGAH bit in the CLK_ICKR register.
5. Configured by the AHALT bit in the FLASH_CR1 register.
6. Plus 1 LSI clock depending on synchronization.
Wakeup time from wait
mode to run mode
Wakeup time active halt
mode to run mode.
Wakeup time from halt
mode to run mode
= 2 x 1/f
master
+ 7 x 1/f
(3)
(3)
(3)
CPU
Table 27. Wakeup times
0 to 16 MHz--
f
= f
CPU
MASTER
MVR voltage
regulator on
MVR voltage
regulator off
Flash in operating mode
Flash in power-down mode
= 16 MHz. 0.56-
Flash in operating
(5)
mode
(4)
Flash in power-down
(5)
mode
Flash in operating
(5)
mode
(4)
Flash in power-down
(5)
mode
(5)
(5)
HSI (after
wakeup)
(6)
1
(6)
3
(6)
48
(6)
50
52-
54-
(1)
(1)
2
(1)
(2)
(6)
-
-
-
Unit
µA
Unit
µA
Unit
µs
DS12129 Rev 349/85
76
Electrical characteristicsSTM8S001J3
Total current consumption and timing in forced reset state
Table 28. Total current consumption and timing in forced reset state
SymbolParameterConditionsTypMax
(1)
Unit
I
DD(R)
t
RESETBL
1. Guaranteed by design.
2. Characterized with all I/Os tied to V
Supply current in reset state
Reset release to vector fetch--150µs
Current consumption of on-chip peripherals
Subject to general operating conditions for VDD and TA.
HSI internal RC/f
SymbolParameterTyp.Unit
I
DD(TIM1)
I
DD(TIM2)
I
DD(TIM4)
I
DD(UART1)
I
DD(SPI)
I
DD(I2C)
I
DD(ADC1)
1. Data based on a differential IDD measurement between reset configuration and timer counter running at
16 MHz. No IC/OC programmed (no I/O pads toggling). Not tested in production.
TIM1 supply current
TIM2 supply current
TIM4 timer supply current
UART1 supply current
SPI supply current
I2C supply current
ADC1 supply current when converting
VDD = 5 V400-
= 3.3 V300-
V
DD
= 16 MHz, VDD = 5 V.
SS
CPU
.
= f
(2)
MASTER
Table 29. Peripheral current consumption
(1)
(1)
130
(1)
50
(1)
120
(1)
45
(1)
(1)
µA
210
µA
65
1000
50/85DS12129 Rev 3
STM8S001J3Electrical characteristics
Current consumption curves
The following figures show the typical current consumption measured with code executing in
RAM.
Figure 9. Typ. I
Figure 10. Typ. I
DD(RUN)
DD(RUN)
vs VDD, HSE user external clock, f
vs f
, HSE user external clock, VDD = 5 V
CPU
= 16 MHz
CPU
DS12129 Rev 351/85
76
Electrical characteristicsSTM8S001J3
Figure 11. Typ. I
DD(RUN)
vs VDD, HSI RC osc, f
= 16 MHz
CPU
Figure 12. Typ. I
DD(WFI)
vs. VDD HSE user external clock, f
= 16 MHz
CPU
52/85DS12129 Rev 3
STM8S001J3Electrical characteristics
Figure 13. Typ. I
Figure 14. Typ. I
DD(WFI)
DD(WFI)
vs. f
, HSE user external clock, VDD = 5 V
CPU
vs VDD, HSI RC osc, f
CPU
= 16 MHz
DS12129 Rev 353/85
76
Electrical characteristicsSTM8S001J3
V
HSEH
V
HSEL
External clock
source
OSCIN
f
HSE
STM8
MS36489V2
9.3.3 External clock sources and timing characteristics
HSE user external clock
Subject to general operating conditions for VDD and TA.
SymbolParameterConditionsMinTypMaxUnit
Table 30. HSE user external clock characteristics
f
HSE_ext
V
HSEH
V
HSEL
I
LEAK_HSE
1. Guaranteed by characterization results.
User external clock source
frequency
OSCIN input pin high level
(1)
voltage
OSCIN input pin low level
(1)
voltage
OSCIN input leakage
current
Figure 15. HSE external clock source
0-16MHz
-
0.7 x V
DD
-V
DD
+ 0.3 V
V
V
SS
< V
V
SS
IN
< V
DD
-1-+1µA
-0.3 x V
DD
9.3.4 Internal clock sources and timing characteristics
Subject to general operating conditions for VDD and TA.
54/85DS12129 Rev 3
STM8S001J3Electrical characteristics
High speed internal RC oscillator (HSI)
SymbolParameterConditionsMinTypMaxUnit
Table 31. HSI oscillator characteristics
f
Frequency --16-MHz
HSI
Accuracy of HSI oscillator
ACC
HSI
Accuracy of HSI oscillator
(factory calibrated)
t
su(HSI)
I
DD(HSI)
1. See the application note.
2. Guaranteed by design.
3. Guaranteed by characterization results.
HSI oscillator wakeup
time including calibration
HSI oscillator power
consumption
Figure 16. Typical HSI frequency variation vs VDD at 4 temperatures
User-trimmed with the
CLK_HSITRIMR register
for given V
conditions
= 5 V, TA = 25 °C-2.5-1.5
V
DD
= 5 V,
V
DD
(1)
DD
and TA
-40 °C ≤ TA ≤ 125 °C
--1.0
-5-5
-- -1.0
--170250
(2)
(2)
(3)
%
µs
µA
Low speed internal RC oscillator (LSI)
Subject to general operating conditions for VDD and TA.
Figure 17. Typical LSI frequency variation vs VDD @ 4 temperatures
56/85DS12129 Rev 3
STM8S001J3Electrical characteristics
9.3.5 Memory characteristics
RAM and hardware registers
SymbolParameter ConditionsMinUnit
V
RM
1. Minimum supply voltage without losing data stored in RAM (in halt mode or under reset) or in hardware
registers (only in halt mode). Guaranteed by design.
2. Refer to Table 18 on page 44 for the value of V
Flash program memory and data EEPROM
General conditions: TA = -40 to 85 °C.
SymbolParameter ConditionsMin
Table 34. Flash program memory and data EEPROM
Table 33. RAM and hardware registers
Data retention mode
(1)
IT-max
Halt mode (or reset)V
.
(2)
IT-max
(1)
TypMaxUnit
V
V
Operating voltage
DD
(all modes, execution/write/erase)
f
≤ 16 MHz2.95-5.5V
CPU
Standard programming time (including
t
prog
t
erase
N
RW
erase) for byte/word/block
(1 byte/4 bytes/64 bytes)
Fast programming time for 1 block (64
bytes)
Erase time for 1 block (64 bytes)--3.03.3ms
Erase/write cycles
(2)
(program memory)
(2)
Erase/write cycles
(data memory)
--6.06.6ms
--3.03.3ms
100--
TA = 85 °C
100 k--
Data retention (program memory)
t
RET
after 100 erase/write cycles at
T
= 85 °C
A
Data retention (data memory) after
10 k erase/write cycles at TA = 85 °C
T
RET
= 55° C
20--
20--
Data retention (data memory) after
= 85° C1.0--
100 k erase/write cycles at
= 125 °C
T
A
Supply current (Flash programming or
I
DD
erasing for 1 to 128 bytes)
1. Guaranteed by characterization results.
2. The physical granularity of the memory is 4 bytes, so cycling is performed on 4 bytes even when a
write/erase operation addresses a single byte.
T
RET
--2.0-mA
cycles
years
DS12129 Rev 357/85
76
Electrical characteristicsSTM8S001J3
9.3.6 I/O port pin characteristics
General characteristics
Subject to general operating conditions for VDD and TA unless otherwise specified. All
unused pins must be kept at a fixed voltage: using the output mode of the I/O for example or
an external pull-up or pull-down resistor.
SymbolParameterConditionsMinTypMaxUnit
Input low level
V
IL
voltage
Input high level
V
IH
voltage
V
R
tR, t
Hysteresis
hys
Pull-up resistorVDD = 5 V, V
pu
Rise and fall time
F
(10% - 90%)
(1)
Input leakage
I
current,
lkg
analog and digital
I
lkg ana
I
lkg(inj)
Analog input
leakage current
Leakage current in
adjacent I/O
Table 35. I/O static characteristics
-0.3-0.3 x V
= 5 V
V
DD
0.7 x V
DD
-700- mV
= V
IN
SS
Fast I/Os
Load = 50 pF
Standard and high sink I/Os
Load = 50 pF
≤ V
≤ V
IN
IN
≤ V
≤ V
DD
DD
V
SS
V
SS
3055 80kΩ
--20
--125
--±1µA
--±250
Injection current ±4 mA--±1
-VDD + 0.3 VV
DD
(2)
(2)
ns
(3)
(3)
V
ns
nA
µA
1. Hysteresis voltage between Schmitt trigger switching levels. Guaranteed by characterization results.
2. Guaranteed by design.
3. Guaranteed by characterization results.
58/85DS12129 Rev 3
STM8S001J3Electrical characteristics
Figure 18. Typical VIL and VIH vs VDD @ 4 temperatures
Figure 19. Typical pull-up resistance vs V
@ 4 temperatures
DD
DS12129 Rev 359/85
76
Electrical characteristicsSTM8S001J3
Figure 20. Typical pull-up current vs VDD @ 4 temperatures
1. The pull-up is a pure resistor (slope goes through 0).
Table 36. Output driving current (standard ports)
SymbolParameterConditionsMinMaxUnit
V
OL
Output low level with 4 pins sunkI
Output high level with 8 pins sourcedIIO = 10 mA, V
V
OH
Output high level with 4 pins sourcedI
1. Guaranteed by characterization results.
Output low level with 8 pins sunkI
Table 37. Output driving current (true open drain ports)
= 10 mA, V
IO
= 4 mA, V
IO
= 4 mA, V
IO
= 5 V-2
DD
= 3.3 V-1
DD
= 5 V2.8-
DD
= 3.3 V2.1
DD
(1)
(1)
-
SymbolParameterConditionsMaxUnit
I
V
1. Guaranteed by characterization results.
Output low level with 2 pins sunk
OL
= 10 mA, V
IO
= 10 mA, V
IO
IIO = 20 mA, V
= 5 V1
DD
= 3.3 V1.5
DD
= 5 V2
DD
(1)
(1)
V
V
VI
60/85DS12129 Rev 3
STM8S001J3Electrical characteristics
Table 38. Output driving current (high sink ports)
SymbolParameterConditionsMinMaxUnit
Output low level with 8 pins sunkIIO = 10 mA, V
V
Output low level with 4 pins sunkI
OL
Output low level with 4 pins sunkIIO = 20 mA, V
Output high level with 8 pins sourcedIIO = 10 mA, V
V
Output high level with 4 pins sourcedI
OH
Output high level with 4 pins sourcedI
1. Guaranteed by characterization results.
= 10 mA, V
IO
= 10 mA, V
IO
= 20 mA, V
IO
= 5 V-0.8
DD
= 3.3 V-1.0
DD
= 5 V-1.5
DD
= 5 V4.0-
DD
= 3.3 V2.1
DD
= 5 V3.3
DD
(1)
(1)
(1)
(1)
-
-
Typical output level curves
Figure 22 to Figure 29 show typical output level curves measured with output on a single
1. Measurement points are done at CMOS levels: 0.3 V
Figure 33. SPI timing diagram - master mode
High
NSS input
t
c(SCK)
CPHA=0
CPOL=0
CPHA=0
CPOL=1
SCK Output
tc(SCK)
and 0.7 V
DD
DD.
BIT6 OUT
BIT 1 IN
th(SO)
(1)
th(NSS)
tr(SCK)
tf(SCK)
LSB IN
(1)
tdis(SO)
LSB OUT
ai14135b
CPHA=1
CPOL=0
CPHA=1
CPOL=1
SCK Output
t
t
MISO
INP UT
MOSI
OUTPUT
su(MI)
1. Measurement points are done at CMOS levels: 0.3 V
w(SCKH)
t
w(SCKL)
MSB IN
MSB OUT
t
v(MO)
t
h(MI)
and 0.7 V
DD
BIT6 IN
B I T1 OUT
DD.
68/85DS12129 Rev 3
t
h(MO)
t
r(SCK)
t
f(SCK)
LSB IN
LSB OUT
ai14136c
STM8S001J3Electrical characteristics
9.3.8 I2C interface characteristics
SymbolParameter
t
w(SCLL)
t
w(SCLH)
t
su(SDA)
t
h(SDA)
t
r(SDA)
t
r(SCL)
t
f(SDA)
t
f(SCL)
t
h(STA)
t
su(STA)
t
su(STO)
t
w(STO:STA)
C
1. f
MASTER
Data based on standard I2C protocol requirement, not tested in production
2.
The maximum hold time of the start condition has only to be met if the interface does not stretch the low
3.
time
The device must internally provide a hold time of at least 300 ns for the SDA signal in order to bridge the
4.
undefined region of the falling edge of SCL
SCL clock low time4.7-1.3 -
SCL clock high time4.0-0.6 -
SDA setup time250-100 -
SDA data hold time0
SDA and SCL rise time-1000-300
SDA and SCL fall time-300-300
START condition hold time4.0-0.6-
Repeated START condition setup time4.7-0.6 -
STOP condition setup time4.0-0.6 -µs
STOP to START condition time
(bus free)
Capacitive load for each bus line-400-400pF
b
, must be at least 8 MHz to achieve max fast I2C speed (400 kHz)
Table 40. I2C characteristics
Standard mode I2C
(2)
Min
(3)
4.7-1.3-µs
Fast mode
(2)
Max
-0
Min
(4)
I2C
(2)
(1)
Max
900
Unit
(2)
µs
(3)
ns
µs
DS12129 Rev 369/85
76
Electrical characteristicsSTM8S001J3
Figure 34.
Typical application with I2C bus and timing diagram
V
DD
V
DD
4.7 kΩ4.7 kΩ
100 Ω
SDA
I²C bus
SCL
100 Ω
START
SD A
t
f(SDA)
SCL
t
w(SCLH)
t
h(STA)
t
r(SDA)
t
r(SCL)
t
w(SCLL)
t
su(SDA)
t
h(SDA)
t
f(SCL)
1. Measurement points are made at CMOS levels: 0.3 x VDD and 0.7 x V
t
su(STA)
DD
STM8
S TART REPEATED
STOP
t
su(STO)
START
t
su(STA:STO)
ai17490V2
70/85DS12129 Rev 3
STM8S001J3Electrical characteristics
9.3.9 10-bit ADC characteristics
Subject to general operating conditions for V
DDA
, f
MASTER
, and TA unless otherwise
specified.
SymbolParameter ConditionsMinTyp MaxUnit
f
ADC
V
V
BGREF
C
t
t
STAB
t
CONV
1. During the sample time the input capacitance C
source. The internal resistance of the analog source must allow the capacitance to reach its final voltage
level within t
the conversion result. Values for the sample clock tS depend on programming.
ADC clock frequency
Conversion voltage range
AIN
Internal bandgap reference
voltage
Internal sample and hold
ADC
capacitor
(1)
Sampling time
S
Wakeup time from standby--7-µs
Total conversion time (including
sampling time, 10-bit resolution)
After the end of the sample time tS, changes of the analog input voltage have no effect on
S.
Table 41. ADC characteristics
(1)
V
V
V
DDA=
AIN
3 to 5.5 V1-4
DDA =
4.5 to 5.5 V1-6
DDA =
-V
2.95 to 5.5 V1.191.221.25V
--3-pF
f
= 4 MHz-0.75-
ADC
= 6 MHz-0.5-
f
ADC
f
= 4 MHz3.5µs
ADC
f
= 6 MHz2.33µs
ADC
-141/f
(3 pF max) can be charged/discharged by the external
SS
MHz
-VDDV
µs
ADC
DS12129 Rev 371/85
76
Electrical characteristicsSTM8S001J3
SymbolParameter ConditionsTypMax
|ET|Total unadjusted error
|EO|Offset error
|EG|Gain error
|ED|Differential linearity error
|E
|Integral linearity error
L
1. Guaranteed by characterization results.
2. ADC accuracy vs. negative injection current: Injecting negative current on any of the analog input pins
should be avoided as this significantly reduces the accuracy of the conversion being performed on another
analog input. It is recommended to add a Schottky diode (pin to ground) to standard analog pins which may
potentially inject negative current. Any positive injection current within the limits specified for I
ΣI
in Section 9.3.6 does not affect the ADC accuracy.
INJ(PIN)
Table 42. ADC accuracy with R
f
ADC
(2)
(2)
(2)
(2)
(2)
f
ADC
f
ADC
f
ADC
f
ADC
f
ADC
f
ADC
f
ADC
f
ADC
f
ADC
f
ADC
f
ADC
f
ADC
f
ADC
f
ADC
< 10 kΩ , V
AIN
DD
= 5 V
= 2 MHz1.63.5
= 4 MHz2.24
= 6 MHz2.44.5
= 2 MHz1.12.5
= 4 MHz1.53
= 6 MHz1.83
= 2 MHz1.53
= 4 MHz2.13
= 6 MHz2.24
= 2 MHz0.71.5
= 4 MHz0.71.5
= 6 MHz0.71.5
= 2 MHz0.61.5
= 4 MHz0.82
= 6 MHz0.82
(1)
INJ(PIN)
and
Unit
LSB
SymbolParameter ConditionsTypMax
|E
|Total unadjusted error
T
|E
|Offset error
O
|E
|Gain error
G
|E
|Differential linearity error
D
|E
|Integral linearity error
L
1. Guaranteed by characterization results.
2. ADC accuracy vs. negative injection current: Injecting negative current on any of the analog input pins
should be avoided as this significantly reduces the accuracy of the conversion being performed on another
analog input. It is recommended to add a Schottky diode (pin to ground) to standard analog pins which may
potentially inject negative current. Any positive injection current within the limits specified for I
ΣI
INJ(PIN)
Table 43. ADC accuracy with R
(2)
(2)
(2)
(2)
(2)
in Section 9.3.6 does not affect the ADC accuracy.
AIN
f
ADC
f
ADC
f
ADC
f
ADC
f
ADC
f
ADC
f
ADC
f
ADC
f
ADC
f
ADC
< 10 kΩ R
AIN
, V
= 3.3 V
DD
= 2 MHz1.63.5
= 4 MHz1.94
= 2 MHz12.5
= 4 MHz1.52.5
= 2 MHz1.33
= 4 MHz23
= 2 MHz0.71.0
= 4 MHz0.71.5
= 2 MHz0.61.5
= 4 MHz0.82
(1)
INJ(PIN)
and
Unit
LSB
72/85DS12129 Rev 3
STM8S001J3Electrical characteristics
E
O
E
G
1LSB
IDEAL
1LSB
IDEAL
V
DDAVSSA
–
1024
----------------------------- ------------=
1023
1022
1021
5
4
3
2
1
0
7
6
1234567
1021102210231024
(1)
(2)
E
T
E
D
E
L
(3)
V
DDA
V
SSA
AINx
STM8
V
DD
I
L
±1µA
V
T
0.6V
V
T
0.6V
C
ADC
V
AIN
R
AIN
10-bit A/D
conversion
C
AIN
Figure 35. ADC accuracy characteristics
1. Example of an actual transfer curve.
2. The ideal transfer curve
3. End point correlation line
= Total unadjusted error: maximum deviation between the actual and the ideal transfer curves.
E
T
E
= Offset error: deviation between the first actual transition and the first ideal one.
O
EG = Gain error: deviation between the last ideal transition and the last actual one.
ED = Differential linearity error: maximum deviation between actual steps and the ideal one.
E
= Integral linearity error: maximum deviation between any actual transition and the end point correlation
L
line.
Figure 36. Typical application with ADC
DS12129 Rev 373/85
76
Electrical characteristicsSTM8S001J3
9.3.10 EMC characteristics
Susceptibility tests are performed on a sample basis during product characterization.
Functional EMS (electromagnetic susceptibility)
While executing a simple application (toggling 2 LEDs through I/O ports), the product is
stressed by two electromagnetic events until a failure occurs (indicated by the LEDs).
•ESD: Electrostatic discharge (positive and negative) is applied on all pins of the device
until a functional disturbance occurs. This test conforms with the IEC 61000-4-2
standard.
•FTB: A burst of fast transient voltage (positive and negative) is applied to V
through a 100 pF capacitor, until a functional disturbance occurs. This test conforms
with the IEC 61000-4-4 standard.
A device reset allows normal operations to be resumed. The test results are given in the
table below based on the EMS levels and classes defined in application note AN1709.
Designing hardened software to avoid noise problems
EMC characterization and optimization are performed at component level with a typical
application environment and simplified MCU software. It should be noted that good EMC
performance is highly dependent on the user application and the software in particular.
and VSS
DD
Therefore it is recommended that the user applies EMC software optimization and
prequalification tests in relation with the EMC level requested for his application.
Software recommendations
The software flowchart must include the management of runaway conditions such as:
•Corrupted program counter
•Unexpected reset
•Critical data corruption (control registers...)
Prequalification trials
To complete these trials, ESD stress can be applied directly on the device, over the range of
specification values. When unexpected behavior is detected, the software can be hardened
to prevent unrecoverable errors occurring (see application note AN1015).
SymbolParameterConditionsLevel/class
V
V
Voltage limits to be applied on any I/O pin to
FESD
induce a functional disturbance
Fast transient voltage burst limits to be
applied through 100pF on VDD and V
EFTB
to induce a functional disturbance
Table 44. EMS data
V
DD
f
MASTER
conforming to IEC 61000-4-2
V
DD
f
MASTER
conforming to IEC 61000-4-4
SS
pins
= 3.3 V, TA = 25 °C,
= 16 MHz,
= 3.3 V, TA = 25 °C,
= 16 MHz,
TBD
TBD
(1)
(1)
1. Data obtained with HSI clock configuration, after applying HW recommendations described in AN2860 EMC guidelines for STM8Smicrocontrollers.
74/85DS12129 Rev 3
STM8S001J3Electrical characteristics
Electromagnetic interference (EMI)
Based on a simple application running on the product (toggling two LEDs through the I/O
ports), the product is monitored in terms of emission. Emission tests conform to the IEC
61967-2 standard for test software, board layout and pin loading.
Table 45. EMI data
Conditions
SymbolParameter
General conditions
V
= 5 V
DD
= 25 °C
T
S
Peak level
EMI
A
SO8N package
conforming to IEC
EMI level-TBDTBD-
1. Guaranteed by characterization results.
61967-2
Max f
HSE/fCPU
Monitored
frequency band
16 MHz/
8 MHz
0.1 MHz to 30 MHzTBDTBD
130 MHz to 1 GHzTBDTBD
(1)
Unit
16 MHz/
16 MHz
dBµV30 MHz to 130 MHzTBDTBD
Absolute maximum ratings (electrical sensitivity)
Based on three different tests (ESD, DLU and LU) using specific measurement methods,
the product is stressed in order to determine its performance in terms of electrical sensitivity.
For more details, refer to the application note AN1181.
Electrostatic discharge (ESD)
Electrostatic discharges (one positive then one negative pulse separated by 1 second) are
applied to the pins of each sample according to each pin combination. The sample size
depends on the number of supply pins in the device (3 parts*(n+1) supply pin). One model
can be simulated: the Human Body Model (HBM). This test conforms to the JESD22A114A/A115A standard. For more details, refer to the application note AN1181.
Table 46. ESD absolute maximum ratings
SymbolRatingsConditionsClass
V
ESD(HBM)
V
ESD(CDM)
1. Guaranteed by characterization results.
Electrostatic discharge voltage
(Human body model)
Electrostatic discharge voltage
(Charge device model)
TA = 25°C, conforming to
JESD22-A114
TA= 25°C, conforming to
JESD22-C101
DS12129 Rev 375/85
Maximum
value
(1)
Unit
ATBDV
IVTBDV
76
Electrical characteristicsSTM8S001J3
Static latch-up
Two complementary static tests are required on 10 parts to assess the latch-up
performance:
•A supply overvoltage (applied to each power supply pin)
•A current injection (applied to each input, output and configurable I/O pin) is performed
on each sample.
This test conforms to the EIA/JESD 78 IC latch-up standard. For more details, refer to the
application note AN1181.
SymbolParameterConditionsClass
Table 47. Electrical sensitivities
(1)
LUStatic latch-up class
TA = 25 °CTBD
= 85 °CTBD
T
A
1. Class description: A Class is an STMicroelectronics internal specification. All its limits are higher than the
JEDEC specifications, that means when a device belongs to class A it exceeds the JEDEC standard. B
class strictly covers all the JEDEC criteria (international standard).
76/85DS12129 Rev 3
STM8S001J3Package information
10 Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
Failure analysis and guarantee
The small number of pins available induces limitations on failure analysis depth in case of
isolated symptoms, typically with an impact lower than 0.1%. Please contact your sales
office for additional information for any failure analysis. STMicroelectronics will make a
feasibility study for investigation based on failure rate and symptom description prior to
responsibility endorsement.
10.1 SO8N package information
Figure 37. SO8N – 8-lead, 4.9 x 6 mm, plastic small outline, 150 mils body width,
package outline
1. Drawing not to scale.
Table 48. SO8N – 8-lead 4.9 x 6 mm, plastic small outline, 150 mils body width,
package mechanical data
millimetersinches
Symbol
Min.Typ.Max.Min.Typ.Max.
A--1.750--0.0689
A10.100-0.2500.0039-0.0098
A21.250--0.0492--
b0.280-0.4800.0110-0.0189
c0.170-0.2300.0067-0.0091
DS12129 Rev 377/85
(1)
80
Package informationSTM8S001J3
O7_FP_V1
1.27
0.6 (x8)
3.9
6.7
Table 48. SO8N – 8-lead 4.9 x 6 mm, plastic small outline, 150 mils body width,
package mechanical data
millimetersinches
Symbol
Min.Typ.Max.Min.Typ.Max.
D4.8004.9005.0000.18900.19290.1969
E5.8006.0006.2000.22830.23620.2441
E13.8003.9004.0000.14960.15350.1575
e-1.270--0.0500-
h0.250-0.5000.0098-0.0197
k0°-8°0°-8°
L0.400-1.2700.0157-0.0500
L1-1.040--0.0409-
ccc--0.100--0.0039
1. Values in inches are converted from mm and rounded to four decimal digits.
(1)
Figure 38. SO8N – 8-lead 4.9 x 6 mm, plastic small outline, 150 mils body width,
package recommended footprint
Device marking for SO8N – 8-lead 4.9 x 6 mm, plastic small outline, 150 mils body
width
The following figure gives an example of topside marking orientation versus pin 1/ball A1
identifier location.
Other optional marking or inset/upset marks, which identify the parts throughout supply
chain operations, are not indicated below.
78/85DS12129 Rev 3
STM8S001J3Package information
MSv17033v1
8S001J3
RYWW
Product identification
Additional information
Date code
Unmarkable surface
PIN1 reference
Figure 39. SO8N – 8-lead 4.9 x 6 mm, plastic small outline, 150 mils body width,
marking example
10.2 Thermal characteristics
1. Parts marked as ES or E or accompanied by an Engineering Sample notification letter are not yet qualified
and therefore not approved for use in production. ST is not responsible for any consequences resulting
from such use. In no event will ST be liable for the customer using any of these engineering samples in
production. ST's Quality department must be contacted prior to any decision to use these engineering
samples to run a qualification activity.
The maximum chip junction temperature (T
) must never exceed the values given in
Jmax
Tabl e 17: General operating conditions.
The maximum chip-junction temperature, T
, in degrees Celsius, may be calculated
Jmax
using the following equation:
T
Jmax
= T
Amax
+ (P
Dmax
x ΘJA)
Where:
•T
•Θ
•P
•P
is the maximum ambient temperature in ° C
Amax
is the package junction-to-ambient thermal resistance in ° C/W
JA
is the sum of P
Dmax
is the product of I
INTmax
INTmax
DD
and P
I/Omax (PDmax
= P
INTmax
+ P
and VDD, expressed in Watts. This is the maximum chip
I/Omax
)
internal power.
•P
P
VOH/I
represents the maximum power dissipation on output pins, where:
I/Omax
I/Omax =
Σ (VOL*IOL) + Σ((VDD-V
of the I/Os at low and high level in the application.
OH
OH)*IOH
), and taking account of the actual VOL/I
OL
and
DS12129 Rev 379/85
80
Package informationSTM8S001J3
SymbolParameterValueUnit
Θ
JA
1. Thermal resistances are based on JEDEC JESD51-2 with 4-layer PCB in a natural convection
environment.
Thermal resistance junction-ambient
SO8N
Table 49. Thermal characteristics
10.2.1 Reference document
JESD51-2 integrated circuits thermal test method environment conditions - natural
convection (still air). Available from www.jedec.org.
10.2.2 Selecting the product temperature range
When ordering the microcontroller, the temperature range is specified in the order code (see
Figure 40: STM8S001J3 ordering information scheme(1)).
The following example shows how to calculate the temperature range needed for a given
application.
Assuming the following application conditions:
•Maximum ambient temperature T
•I
= 8 mA, VDD = 5.0 V
DDmax
•Maximum 4 I/Os used at the same time in output at low level with
I
= 8 mA, VOL= 0.4 V
OL
P
INTmax =
P
Dmax
Thus: P
8 mA x 5.0 V = 40 mW
= 40 mW + (8 x 0.4 x 4) mW
= 52.8 mW
Dmax
= 75 °C (measured according to JESD51-2)
Amax
(1)
102°C/W
Using the values obtained in Section Table 49.: Thermal characteristics T
as follows for SO8N package 102 °C/W :
T
= 75 °C + (102 °C/W x 52.8 mW) = 75 °C + 5.4 °C = 80.4 °C.
Jmax
Above information is within the range (-40 < TJ < 130 °C)
80/85DS12129 Rev 3
is calculated
Jmax
STM8S001J3Ordering information
STM8S001J3M3TR
Product class
STM8 microcontroller
Pin count
J = 8 pins
Package type
M =SO8N
Example:
Sub-family type
001 = low density
Family type
S = standard
Temperature range
3 = -40°C to 125°C
Program memory size
3 = 8 Kbyte
Packing
No character = tube
TR = Tape and reel
11 Ordering information
Figure 40. STM8S001J3 ordering information scheme
(1)
1. For a list of available options (e.g. memory size, package) and orderable part numbers or for further
information on any aspect of this device, please go to www.st.com
to you.
or contact the ST Sales Office nearest
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STM8 development toolsSTM8S001J3
12 STM8 development tools
Development tools for the STM8 microcontrollers include the full-featured STice emulation
system supported by a complete software tool package including C compiler, assembler and
integrated development environment with high-level language debugger. In addition, the
STM8 is to be supported by a complete range of tools including starter kits, evaluation
boards and a low-cost in-circuit debugger/programmer.
12.1 Emulation and in-circuit debugging tools
The STice emulation system offers a complete range of emulation and in-circuit debugging
features on a platform that is designed for versatility and cost-effectiveness. In addition,
STM8 application development is supported by a low-cost in-circuit debugger/programmer.
The STice is the fourth generation of full featured emulators from STMicroelectronics. It
offers new advanced debugging capabilities including profiling and coverage to help detect
and eliminate bottlenecks in application execution and dead code when fine tuning an
application.
In addition, STice offers in-circuit debugging and programming of STM8 microcontrollers via
the STM8 single wire interface module (SWIM), which allows non-intrusive debugging of an
application while it runs on the target microcontroller.
For improved cost effectiveness, STice is based on a modular design that allows users to
order exactly what they need to meet their development requirements and to adapt their
emulation system to support existing and future ST microcontrollers.
STice key features
•Occurrence and time profiling and code coverage (new features)
•Advanced breakpoints with up to 4 levels of conditions
•Data breakpoints
•Program and data trace recording up to 128 KB records
•Read/write on the fly of memory during emulation
•In-circuit debugging/programming via SWIM protocol
•8-bit probe analyzer
•1 input and 2 output triggers
•Power supply follower managing application voltages between 1.62 to 5.5 V
•Modularity that allows users to specify the components users need to meet their
development requirements and adapt to future requirements
•Supported by free software tools that include integrated development environment
(IDE), programming software interface and assembler for STM8.
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12.2 Software tools
STM8 development tools are supported by a complete, free software package from
STMicroelectronics that includes ST Visual Develop (STVD) IDE and the ST Visual
Programmer (STVP) software interface. STVD provides seamless integration of the Cosmic
and Raisonance C compilers for STM8. A free version that outputs up to
available.
12.2.1 STM8 toolset
STM8 toolset with STVD integrated development environment and STVP programming
software is available for free download at www.st.com. This package includes:
ST Visual Develop – Full-featured integrated development environment from ST, featuring
•Seamless integration of C and ASM toolsets
•Full-featured debugger
•Project management
•Syntax highlighting editor
•Integrated programming interface
•Support of advanced emulation features for STice such as code profiling and coverage
ST Visual Programmer (STVP) – Easy-to-use, unlimited graphical interface allowing read,
write and verify the user STM8 microcontroller Flash program memory, data EEPROM and
option bytes. STVP also offers project mode for saving programming configurations and
automating programming sequences.
Kbytes of code is
12.2.2 C and assembly toolchains
Control of C and assembly toolchains is seamlessly integrated into the STVD integrated
development environment, making it possible to configure and control the building of user
application directly from an easy-to-use graphical interface.
Available toolchains include:
•Cosmic C compiler for STM8 – One free version that outputs up to Kbytes of code is
available. For more information, see www.cosmic-software.com.
•Raisonance C compiler for STM8 – One free version that outputs up to Kbytes of
code. For more information, see www.raisonance.com.
•STM8 assembler linker – Free assembly toolchain included in the STVD toolset,
which allows users to assemble and link the user application source code.
12.3 Programming tools
During the development cycle, STice provides in-circuit programming of the STM8 Flash
microcontroller on user application board via the SWIM protocol. Additional tools are to
include a low-cost in-circuit programmer as well as ST socket boards, which provide
dedicated programming platforms with sockets for programming the user STM8.
For production environments, programmers will include a complete range of gang and
automated programming solutions from third-party tool developers already supplying
programmers for the STM8 family.
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Revision historySTM8S001J3
13 Revision history
DateRevisionChanges
24-May-20171Initial release.
29-Jun-20172
28-Jun-20183
Table 50. Document revision history
Updated:
Section 10: Package information
Figure 3: STM8S001J3 SO8N pinout
Table 5: STM8S001J3 pin description
Table 13: STM8S001J3 alternate function remapping
bits for 8-pin devices
Added:
Section : Device marking for SO8N – 8-lead 4.9 x 6 mm,
plastic small outline, 150 mils body width
Updated:
Analog to digital converter (ADC) on cover page
Recommendation for SWIM pin (pin #8) sharing on
bits for 8-pin devices
Table 41: ADC characteristics
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