dBm with 1 dB steps
– Integrated balun to reduce BOM
– Support for 2 Mbps
– Dedicated Arm
for real-time Radio layer
– Accurate RSSI to enable power control
– Suitable for systems requiring compliance
with radio frequency regulations ETSI EN
300 328, EN 300 440, FCC CFR47 Part 15
and ARIB STD-T66
– Support for external PA
– Available integrated passive device (IPD)
companion chip for optimized matching
solution (MLPF-WB-01E3)
Ultra-low-power platform
– 1.71 to 3.6 V power supply
– – 40 °C to 85 / 105 °C temperature ranges
– 12 nA shutdown mode
– 610 nA Standby mode + RTC + 48 KB
RAM
– Active-mode MCU: 33 µA / MHz when RF
and SMPS on
– Radio: Rx 4.5 mA / Tx at 0 dBm 5.2 mA
®
32-bit Cortex® M0+ CPU
STM32WB15CC
with FPU, Bluetooth
®
5.2
®
Low
Core: Arm
adaptive real-time accelerator (ART
Accelerator) allowing 0-wait-state execution
from Flash memory, frequency up to 64 MHz,
MPU, 80 DMIPS and DSP instructions
Performance benchmark
– 1.25 DMIPS/MHz (Drystone 2.1)
Supply and reset management
– High efficiency embedded SMPS
step-down converter with intelligent bypass
mode
– Ultra-safe, low-power BOR (brownout
reset) with five selectable thresholds
– Ultra-low-power POR/PDR
– Programmable voltage detector (PVD)
–V
Clock sources
– 32 MHz crystal oscillator with integrated
trimming capacitors (Radio and CPU clock)
– 32 kHz crystal oscillator for RTC (LSE)
– Internal low-power 32 kHz RC (LSI1)
– Internal low-drift 32 kHz RC (LSI2)
– Internal multispeed 100 kHz to 48 MHz
oscillator, factory-trimmed
– High speed internal 16 MHz factory
trimmed RC
– 1x PLL for system clock and ADC
®
32-bit Cortex®-M4 CPU with FPU,
mode with RTC and backup registers
BAT
®
5.2 radio solution
Datasheet - production data
February 2021DS13258 Rev 11/121
This is information on a product in full production.
www.st.com
STM32WB15CC
Memories
– 320 KB Flash memory with sector
protection (PCROP) against R/W
operations, enabling radio stack and
application
The ART Accelerator is a memory accelerator optimized for STM32 industry-standard Arm®
®
Cortex
Cortex
for the Flash memory at higher frequencies.
To release the processor near 80 DMIPS performance at 64 MHz, the accelerator
implements an instruction prefetch queue and branch cache, which increases program
execution speed from the 64-bit Flash memory. Based on CoreMark benchmark, the
performance achieved thanks to the ART accelerator is equivalent to 0 wait state program
execution from Flash memory at a CPU frequency up to 64 MHz.
3.3.2 Memory protection unit
The memory protection unit (MPU) is used to manage the CPU1 accesses to memory to
prevent one task to accidentally corrupt the memory or resources used by any other active
task. This memory area is organized into up to eight protected areas, which can be divided
up into eight subareas. The protection area sizes are between 32 bytes and the whole
4
-M4 processors. It balances the inherent performance advantage of the Arm®
®
-M4 over Flash memory technologies, which normally require the processor to wait
Gbytes of addressable memory.
The MPU is especially helpful for applications where some critical or certified code must be
protected against the misbehavior of other tasks. It is usually managed by an RTOS
(real-time operating system). If a program accesses a memory location prohibited by the
MPU, the RTOS detects it and takes action. In an RTOS environment, the kernel can
dynamically update the MPU area setting, based on the process to be executed.
The MPU is optional and can be bypassed for applications that do not need it.
3.3.3 Embedded Flash memory
The STM32WB15CC device features 320 Kbytes of embedded Flash memory available for
storing programs and data, as well as some customer keys.
Flexible protections can be configured thanks to option bytes:
Readout protection (RDP) to protect the whole memory. Three levels are available:
–Level 0: no readout protection
–Level 1: memory readout protection: the Flash memory cannot be read from or
written to if either debug features are connected, boot in SRAM or bootloader is
selected
–Level 2: chip readout protection: debug features (Cortex
JTAG and serial wire), boot in SRAM and bootloader selection are disabled (JTAG
fuse). This selection is irreversible.
®
-M4 and Cortex®-M0+
14/121DS13258 Rev 1
STM32WB15CCFunctional overview
Table 2. Access status vs. readout protection level and execution modes
Area
Main
memory
System
memory
Option
bytes
Backup
registers
SRAM2a
SRAM2b
1. The option byte can be modified by the RF subsystem.
2. Erased when RDP changes from Level 1 to Level 0.
Protection
level
1YesYesYesNoNoNo
2YesYesYesN/AN/AN/A
1YesNoNoYesNoNo
2YesNoNoN/AN/AN/A
1YesYesYesYesYesYes
2YesNo
1YesYesN/A
2YesYesN/AN/AN/AN/A
1YesYesYes
2YesYesYesN/AN/AN/A
User execution
ReadWriteEraseReadWriteErase
(1)
No
(1)
Debug, boot from SRAM or boot
from system memory (loader)
N/AN/AN/A
(2)
(2)
NoNoN/A
NoNoNo
(2)
(2)
Write protection (WRP): the protected area is protected against erasing and
programming. Two areas can be selected, with 4-Kbyte granularity.
Proprietary code readout protection (PCROP): two parts of the Flash memory can be
protected against read and write from third parties. The protected area is execute-only:
it can only be reached by the STM32 CPU, as an instruction code, while all other
accesses (DMA, debug and CPU data read, write and erase) are strictly prohibited.
Two areas can be selected, with 2-Kbyte granularity. An additional option bit
(PCROP_RDP) makes possible to select if the PCROP area is erased or not when the
RDP protection is changed from Level 1 to Level 0.
A section of the Flash memory is secured for the RF subsystem CPU2, and cannot be
accessed by the host CPU1.
The whole non-volatile memory embeds the error correction code (ECC) feature supporting:
single error detection and correction
double error detection
the address of the ECC fail can be read in the ECC register
The embedded Flash memory is shared between CPU1 and CPU2 on a time sharing basis.
A dedicated HW mechanism allows both CPUs to perform Write/Erase operations.
3.3.4 Embedded SRAM
The STM32WB15CC device features 48 Kbytes of embedded SRAM, split in three blocks:
SRAM1: 12 Kbytes mapped at address 0x2000 0000
SRAM2a: 32 Kbytes located at address 0x2003 0000 also mirrored at 0x1000 0000,
with hardware parity check
SRAM2b: 4 Kbytes located at address 0x2003 8000 (contiguous with SRAM2a) and
mirrored at 0x1000 8000 with hardware parity check
DS13258 Rev 115/121
44
Functional overviewSTM32WB15CC
SRAM2a and SRAM2b can be write-protected, with 1-Kbyte granularity. A section of the
SRAM2a and SRAM2b is secured for the RF sub-system and cannot be accessed by the
host CPU1.
The SRAMs can be accessed in read/write with 0 wait states for all CPU1 and CPU2 clock
speeds.
3.4 Security and safety
The STM32WB15CC contains many security blocks both for the BLE and the Host
application.
It includes:
Secure Flash memory partition for RF subsystem-only access
Secure SRAM partition, that can be accessed only by the RF subsystem
True random number generator (RNG)
Advance encryption standard hardware accelerator (AES-256bit, supporting chaining
modes ECB, CBC, CTR, GCM, GMAC, CCM)
Private key acceleration (PKA) including:
–Modular arithmetic including exponentiation with maximum modulo size of 3136
bits
–Elliptic curves over prime field scalar multiplication, ECDSA signature, ECDSA
verification with maximum modulo size of 521 bits
Cyclic redundancy check calculation unit (CRC)
A specific mechanism is in place to ensure that all the code executed by the RF subsystem
CPU2 can be secure, whatever the Host application.
3.5 Boot modes and FW update
At startup, BOOT0 pin and BOOT1 option bit are used to select one of three boot options:
Boot from user Flash
Boot from system memory
Boot from embedded SRAM
The device always boots on CPU1 core. The embedded bootloader code makes it possible
to boot from various peripherals:
UART
I2C
SPI
Secure Firmware update from system boot is provided.
3.6 RF subsystem
The STM32WB15CC embed an ultra-low power multi-standard radio Bluetooth® Low
Energy (BLE), compliant with Bluetooth
2
Mbps transfer rates, supports multiple roles simultaneously acting at the same time as
®
specification v5.2. The BLE features 1 Mbps and
16/121DS13258 Rev 1
STM32WB15CCFunctional overview
BLE sensor and hub device, embeds Elliptic Curve Diffie-Hellman (ECDH) key agreement
protocol, thus ensuring a secure connection.
The BLE stack runs on an embedded Arm® Cortex®-M0+ core (CPU2). The stack is stored
on the embedded Flash memory, which is also shared with the Arm
application, making it possible in-field stack update.
3.6.1 RF front-end block diagram
The RF front-end is based on a direct modulation of the carrier in Tx, and uses a low IF
architecture in Rx mode.
Thanks to an internal transformer at RF pins, the circuit directly interfaces the antenna
(single ended connection, impedance close to 50 ). The natural bandpass behavior of the
internal transformer, simplifies outside circuitry aimed for harmonic filtering and out of band
interferer rejection.
In Transmit mode, the maximum output power is user selectable through the programmable
LDO voltage of the power amplifier. A linearized, smoothed analog control offers clean
power ramp-up.
In receive mode the circuit can be used in standard high performance or in reduced power
consumption (user programmable). The Automatic gain control (AGC) is able to reduce the
chain gain at both RF and IF locations, for optimized interference rejection. Thanks to the
use of complex filtering and highly accurate I/Q architecture, high sensitivity and excellent
linearity can be achieved.
The bill of material is reduced thanks to the high degree of integration. The radio frequency
source is synthesized form an external 32 MHz crystal that does not need any external
trimming capacitor network thanks to a dual network of user programmable integrated
capacitors.
®
Cortex®-M4 (CPU1)
DS13258 Rev 117/121
44
Functional overviewSTM32WB15CC
MS53542V2
Note: UFQFPN48: V
SS
through exposed pad, and V
SSRF
pin must be connected to ground plane
PA
BP
filter
ADC
ADC
PLL
Modulator
RF1
Adjust
32 MHz
OSC_OUTOSC_IN
PA ramp
generator
AGC
control
BLE
modulator
BLE
demodulator
BLE
controller
RF control
AGC
Timer and Power
control
LDOLDOLDO
V
FBSMPS
Trimmed
bias
V
DDRF
Max PA
level
SMPS
V
LXSMPS
V
DDSMPSVSSSMPS
Adjust
HSE
G
G
LNA
Wakeup
Interrupt
AHB
APB
See
note
RF_TX_
MOD_
EXT_PA
Figure 2. STM32WB15CC RF front-end block diagram
3.6.2 BLE general description
The BLE block is a master/slave processor, compliant with Bluetooth specification 5.2
standard (2
It integrates a 2.4 GHz RF transceiver and a powerful Cortex®-M0+ core, on which a
Mbps).
complete power-optimized stack for Bluetooth Low Energy protocol runs, providing
master
/ slave role support
GAP: central, peripheral, observer or broadcaster roles
ATT/GATT: client and server
SM: privacy, authentication and authorization
L2CAP
Link layer: AES-128 encryption and decryption
18/121DS13258 Rev 1
STM32WB15CCFunctional overview
In addition, according to Bluetooth specification v5.2, the BLE block provides:
Multiple roles simultaneous support
Master/slave and multiple roles simultaneously
LE data packet length extension (making it possible to reach 800 kbps at application
level)
LE privacy 1.2
LE secure connections
Flexible Internet connectivity options
High data rate (2 Mbps)
The device allows the applications to meet the tight peak current requirements imposed by
the use of standard coin cell batteries. When the high efficiency embedded SMPS
step-down converter is used, the RF front end consumption (I
) is only TBD mA at the
tmax
highest output power (TBD dBm).
Ultra-low-power sleep modes and very short transition time between operating modes result
in very low average current consumption during real operating conditions, resulting in longer
battery life.
The BLE block integrates a full bandpass balun, thus reducing the need for external
components.
The link between the Cortex®-M4 application processor (CPU1) running the application, and
the BLE stack running on the dedicated Cortex
®
-M0+ (CPU2) is performed through a
normalized API, using a dedicated IPCC.
3.6.3 RF pin description
The RF block contains dedicated pins, listed in Table 3.
:
NameTypeDescription
RF1
OSC_OUT
OSC_IN
RF_TX_
MOD_EXT_PA
VDDRFV
VSSRF
1. On packages with exposed pad, this pad must be connected to GND plane for correct RF operation.
(1)
RF Input/output, must be connected to the antenna through a low-pass matching network
32 MHz main oscillator, also used as HSE source
I/O
External PA transmit control
Dedicated supply, must be connected to V
DD
VSSTo be connected to GND
Table 3. RF pin list
DD
3.6.4 Typical RF application schematic
The schematic in Figure 3 and the external components listed in Table 3 are purely
indicative. For more details refer to the “Reference design” provided in separate documents.
DS13258 Rev 119/121
44
Functional overviewSTM32WB15CC
MS53575V1
STM32WB
microcontroller
V
DD
OSC_IN
OSC_OUT
VDDRF
VSSRF
RF1
Antenna
Cf1Cf2
Lf1
Lf2
X1
C1
Antenna filter
(including exposed pad)
32 MHz
Figure 3. External components for the RF part
ComponentDescriptionValue
C1Decoupling capacitance for RF100 nF // 100 pF
X132 MHz crystal
Antenna filterAntenna filter and matching networkRefer to AN5165, on www.st.com
Antenna2.4 GHz band antenna-
1. e.g. NDK reference: NX2016SA 32 MHz EXS00A-CS06654.
Table 4. Typical external components
(1)
32 MHz
Note:For more details refer to AN5165 “Development of RF hardware using STM32WB
microcontrollers” available on www.st.com.
3.7 Power supply management
3.7.1 Power supply distribution
The device integrate an SMPS step-down converter to improve low power performance
when the V
automatically enters in bypass mode when the V
(x = 1, 2, 3 or 4) voltage.
By default, at Reset the SMPS is in bypass mode.
The device can be operated without the SMPS by just wiring its output to VDD. This is the
case for applications where the voltage is low, or where the power consumption is not
critical.
voltage is high enough. This converter has an intelligent mode that
DD
voltage falls below a specific BORx
DD
20/121DS13258 Rev 1
STM32WB15CCFunctional overview
MS41409V4
MR
LPR
RFR
SMPS
(not used)
MR
LPR
RFR
V
DD
L1
C2
SMPS configurationLDO configuration
V
DD
VDDSMPS
VLXSMPS
VFBSMPS
SMPS
SMPS mode or
BYPASS mode
VDDSMPS
VLXSMPS
VFBSMPS
Figure 4. Power distribution
Table 5. Power supply typical components
ComponentDescriptionValue
C2SMPS output capacitor
(2)
L1
1. e.g. GRM155R60J475KE19.
2. An extra 10 nH inductor in series with L1 is needed to improve the receiver performance,
e.g Murata LQG15WZ10NJ02D
3. e.g. Wurth 74479774222.
4. e.g. Murata LQM21FN100M70L.
SMPS inductance
(1)
For 8 MHz
For 4 MHz
(3)
(4)
4.7µF
2.2µH
10µH
The SMPS can also be switched on or set in bypass mode at any time by the application
software, for example when very accurate ADC measurement are needed.
3.7.2 Power supply schemes
The device has different voltage supplies (see Figure 6) and can operate within the following
voltage ranges:
V
V
During power up/down, the following power sequence requirements must be respected:
When VDD is below 1 V the other power supply (V
When V
= 1.71 to 3.6 V: external power supply for I/Os (V
DD
), the internal regulator and
DDIO
system functions such as RF, SMPS, reset, power management and internal clocks. It
is provided externally through VDD pins. V
DDRF
and V
DDSMPS
must be always
connected to VDD pins.
= 1.62 (ADC/COMPs) to 3.6 V: external analog power supply for ADC and
DDA
comparator. The V
not used V
V
+ 300 mV
DD
must be connected to VDD.
DDA
is above 1 V all power supplies are independent.
DD
voltage level can be independent from the VDD voltage. When
DDA
), must remain below
DDA
DS13258 Rev 121/121
44
Functional overviewSTM32WB15CC
MSv47490V1
0.3
1
V
BOR0
3.6
Operating modePower-onPower-downtime
V
V
DDX
(1)
V
DD
Invalid supply areaV
DDX
< V
DD
+ 300 mV
V
DDX
independent from V
DD
Figure 5. Power-up/down sequence
1. V
DDX
During the power down phase, VDD can temporarily become lower than other supplies only
if the energy provided to the MCU remains below 1 mJ. This allows the external decoupling
capacitors to be discharged with different time constants during the power down transient
phase.
Note:VDD, V
sequence.
refers to V
and V
DDRF
.
DDA
DDSMPS
must be wired together, so they can follow the same voltage
22/121DS13258 Rev 1
STM32WB15CCFunctional overview
MS53544V2
VBAT
IOs
Wakeup domain (V
DDIO
)
Analog domain
Interruptible domain (V
DD12I
)
Switch domain (V
SW
)
(CPU1, CPU2,
peripherals)
Level shifter
Power switch
V
BAT
ADC
V
DDA
V
REF-
V
DD
HSI, HSE,
PLL, LSI1,
LSI2, IWDG,
RF
IOs
V
SS
V
SS
IO
logic
V
REF+
V
SW
LSE, RTC,
backup
registers
IO
logic
Backup domain
SMPS
Power switch
V
SS
V
BKP12
SRAM1,
SRAM2b,
SRAM2a
Power
switch
V
SS
On domain (V
DD12O
)
Power
switch
V
SS
SysConfig, EXTI,
RCC, PwrCtrl,
LPTIM, LPUSART
=
=
LPR
MR
RFR
V
LXSMPS
V
FBSMPS
V
DDSMPS
RF domain
Radio
V
DDRF
V
SSRF
(including exposed pad)
V
SS
V
SSSMPS
V
SS
V
SS
V
SS
Figure 6. Power supply overview
DS13258 Rev 123/121
44
Functional overviewSTM32WB15CC
3.7.3 Linear voltage regulator
Three embedded linear voltage regulators supply most of the digital and RF circuitries, the
main regulator (MR), the low-power regulator (LPR) and the RF regulator (RFR).
The MR is used in the Run and Sleep modes and in the Stop 0 mode.
The LPR is used in Low-Power Run, Low-Power Sleep and Stop 1 modes. It is also
used to supply the SRAMs in Standby with retention.
The RFR is used to supply the RF analog part, its activity is automatically managed by
the RF subsystem.
All the regulators are in power-down in Standby and Shutdown modes: the regulator output
is in high impedance, and the kernel circuitry is powered down, inducing zero consumption.
The ultralow-power STM32WB15CC supports dynamic voltage scaling to optimize its power
consumption in run mode. The voltage from the main regulator that supplies the logic
(VCORE) can be adjusted according to the system’s maximum operating frequency.
VCORE can also be supplied by the low-power regulator, the main regulator being switched
off. The system is then in Low-power run mode. In this case the CPU is running at up to
2
MHz, and peripherals with independent clock can be clocked by HSI16 (in this mode the
RF subsystem is not available).
3.7.4 Power supply supervisor
An integrated ultra-low-power brown-out reset (BOR) is active in all modes except
Shutdown ensuring proper operation after power-on and during power down. The device
remains in reset mode when the monitored supply voltage V
threshold, without the need for an external reset circuit.
The lowest BOR level is 1.71 V at power on, and other higher thresholds can be selected
through option bytes.The device features an embedded programmable voltage detector
(PVD) that monitors the V
interrupt can be generated when V
higher than the V
threshold. The interrupt service routine can then generate a warning
PVD
message and/or put the MCU into a safe state. The PVD is enabled by software.
In addition, the device embeds a peripheral voltage monitor (PVM) that compares the
independent supply voltage V
functional supply range.
Any BOR level can also be used to automatically switch the SMPS step-down converter in
bypass mode when the V
operation is selectable by register bit, the BOR level is selectable by option byte.
3.7.5 Low-power modes
This ultra-low-power device supports several low-power modes to achieve the best
compromise between low-power consumption, short startup time, available peripherals and
available wakeup sources.
is below a specified
DD
power supply and compares it with the V
DD
DDA
voltage drops below a given voltage level. The mode of
DD
drops below the V
DD
threshold and/or when VDD is
PVD
with a fixed threshold to ensure that the peripheral is in its
threshold. An
PVD
24/121DS13258 Rev 1
STM32WB15CCFunctional overview
By default, the microcontroller is in Run mode, after a system or a power on Reset. It is up to
the user to select one of the low-power modes described below:
Sleep
In Sleep mode, only the CPU1 is stopped. All peripherals, including the RF subsystem,
continue to operate and can wake up the CPU when an interrupt/event occurs.
Low-power run
This mode is achieved with VCORE supplied by the low-power regulator to minimize
the regulator operating current. The code can be executed from SRAM or from the
Flash memory, and the CPU1 frequency is limited to 2 MHz. The peripherals with
independent clock can be clocked by HSI16. The RF subsystem is not available in this
mode and must be OFF.
Low-power sleep
This mode is entered from the low-power run mode. Only the CPU1 clock is stopped.
When wakeup is triggered by an event or an interrupt, the system reverts to the
low-power run mode. The RF subsystem is not available in this mode and must be
OFF.
Stop 0 and Stop 1
Stop modes achieve the lowest power consumption while retaining the content of all
the SRAM and registers. The LSE (or LSI) is still running.
The RTC can remain active (Stop mode with RTC, Stop mode without RTC).
Some peripherals with wakeup capability can enable the HSI16 RC during Stop modes
to detect their wakeup condition.
Two modes are available: Stop 0 and Stop 1.
Stop 1 offers several active peripherals and wakeup sources. In Stop 0 mode the main
regulator remains ON, allowing a very fast wakeup time but with higher consumption.
In these modes the RF subsystem can wait for incoming events in all Stop modes.
The system clock when exiting from Stop 0 or Stop1 modes can be either MSI up to
48 MHz or HSI16 if the RF subsystem is disabled. If the RF subsystem is used the exits
must be set to HSI16 only.
Standby
The Standby mode is used to achieve the lowest power consumption with BOR. The
internal regulator is switched off so that the VCORE domain is powered off.
The RTC can remain active (Standby mode with RTC).
The brown-out reset (BOR) always remains active in Standby mode.
The state of each I/O during standby mode can be selected by software: I/O with
internal pull-up, internal pull-down or floating.
After entering Standby mode, register content is lost except for registers in the Backup
domain and Standby circuitry. Optionally, SRAMs can be retained in Standby mode,
supplied by the low-power regulator (Standby with 48 KB SRAM retention mode).
The device exits Standby mode when an external reset (NRST pin), an IWDG reset,
WKUP pin event (configurable rising or falling edge), or an RTC event occurs (alarm,
periodic wakeup, timestamp, tamper) or a failure is detected on LSE (CSS on LSE, or
from the RF system wakeup).
The system clock after wakeup is 16 MHz, derived from the HSI16
DS13258 Rev 125/121
44
Functional overviewSTM32WB15CC
In this mode the RF can be used.
Shutdown
The Shutdown mode allows to achieve the ultimate lowest power consumption. The
internal regulator is switched off so that the VCORE domain is powered off.
The RTC can remain active (Shutdown mode with RTC, Shutdown mode without RTC).
The BOR is not available in Shutdown mode. No power voltage monitoring is possible
in this mode, therefore the switch to Backup domain is not supported.
SRAM1, SRAM2a, SRAM2b and register contents are lost except for registers in the
Backup domain.
The device exits Shutdown mode when an external reset (NRST pin), a WKUP pin
event (configurable rising or falling edge), or an RTC event occurs (alarm, periodic
wakeup, timestamp, tamper).
The system clock after wakeup is 4 MHz, derived from the MSI.
In this mode the RF is no longer operational.
When the RF subsystem is active, it changes the power state according to its needs (Run,
Stop, Standby). This operation is transparent for the CPU1 host application and managed by
a dedicated HW state machine. At any given time the effective power state reached is the
higher one needed by both the CPU1 and RF sub-system.
Tab l e 6 summarizes the peripheral features over all available modes. Wakeup capability is
detailed in gray cells.
Table 6. Functionalities depending on system operating mode
(1)
Stop0Stop1Standby Shutdow
Peripheral
Run
Sleep
Low-power run
-
Low-power sleep
Wakeup capability
-
Wakeup capability
-
-
Wakeup capability
VBAT
Wakeup capability
CPU1Y-Y----------
CPU2Y-Y--
Radio-system (BLE)YY---
Flash memoryYYOOR
SRAM1Y O
SRAM2aY O
SRAM2bY O
(3)
(3)
(3)
(3)
YO
(3)
YO
(3)
YO
Backup registersYYYYR
Brown-out reset (BOR)YYYYY
Brown-out SMPS
force bypass (BOR)
Programmable voltage detector
(PVD)
YYYY Y
OOO O O
--------
Y-Y-Y
(2)
---
-R-R-R-R
R-R-O
R-R-O
R-R-O
(2)
----
(2)
----
(2)
----
-R-R-R-R
YYYYY- --
Y- ------
OOO- ----
26/121DS13258 Rev 1
STM32WB15CCFunctional overview
Table 6. Functionalities depending on system operating mode
Stop0Stop1Standby Shutdow
Peripheral
Peripheral voltage monitor
(PVMx; x=3)
DMAx (x=1)OOOO-
High speed internal (HSI16)OOOOO
High speed external (HSE)OOOO-
Low speed internal (LSI)OOOOO
Low speed external (LSE)OOOOO
Multi-speed internal (MSI)OOOO-
Clock security system (CSS)OOOO-
Clock security system on LSEOOOOO
RTC / Auto wakeupOOOOO
Run
Sleep
Low-power run
-
Low-power sleep
OOO O O
(4)
-
Wakeup capability
OOO- ----
--------
(4)
-O
--------
-O-O----
-O-O-O-O
--------
--------
OOOOO- --
OOOOOOOO
(1)
(continued)
VBAT
Wakeup capability
Wakeup capability
-
-
Wakeup capability
------
Number of RTC tamper pins11111
USART1OOOOO
Low-power UART (LPUART)OOOOO
I2C1OOOOO
SPIx (x=1)OOOO-
ADC1OOOO-
COMPx (x=1)OOOOO
Temperature sensorOOOO-
Timers (TIMx)OOOO-
Low-power timer 1 (LPTIM1)OOOOO
Low-power timer 2 (LPTIM2)OOOOO
Independent watchdog (IWDG) OOOOO
Window watchdog (WWDG)OOOO-
SysTick timerOOOO-
Touch sensing controller (TSC) OOOO-
True random number generator
(RNG)
OO - - -
O1O1O1O1
(5)O(5)O(5)O(5)
(5)O(5)O(5)O(5)
(6)O(6)O(6)O(6)
-----
-----
-----
--------
--------
OOO- ----
--------
--------
OOO- ----
OOO- ----
OOOOO- --
--------
--------
--------
--------
AES hardware acceleratorOOOO---------
CRC calculation unitOOOO-
--------
DS13258 Rev 127/121
44
Functional overviewSTM32WB15CC
Table 6. Functionalities depending on system operating mode
(1)
(continued)
Stop0Stop1Standby Shutdow
Peripheral
Run
Sleep
Low-power run
-
Low-power sleep
Wakeup capability
-
Wakeup capability
-
Wakeup capability
-
Wakeup capability
IPCCO-O----------
HSEMO-O--
PKAOOOO-
GPIOsOOOOO
1. Legend: Y = Yes (enabled). O = Optional (disabled by default, can be enabled by software).
R = data retained. - = Not available. Gray cells indicate Wakeup capability.
2. The SRAM1, SRAM2a and SRAM2b content needs to be retained via the PWR_CR3.RRS bit.
3. The SRAM clock can be gated on or off.
4. Some peripherals with wakeup from Stop capability can request HSI16 to be enabled. In this case, HSI16
is woken up by the peripheral, and only feeds the peripheral which requested it. HSI16 is automatically put
off when the peripheral does not need it anymore.
5. UART and LPUART reception is functional in Stop mode, and generates a wakeup interrupt on Start,
address match or received frame event.
6. I2C address detection is functional in Stop mode, and generates a wakeup interrupt in case of address
match.
7. I/Os can be configured with internal pull-up, pull-down or floating in Standby mode.
8. The I/Os with wakeup from Standby/Shutdown capability are PA0 and PA2.
9. I/Os can be configured with internal pull-up, pull-down or floating in Shutdown mode but the configuration is
lost when exiting the Shutdown mode.
--------
--------
OOO
(7)
2
pins
(8)
(9)
2
pins
(9)
-
VBAT
28/121DS13258 Rev 1
Table 7. STM32WB15CC modes overview
ModeRegulatorCPU1FlashSRAMClocksDMA and PeripheralsWakeup sourceConsumption
Run MRYesON
LPRunLPRYesON
Sleep MRNoON
(2)
(2)
(2)
ONAnyAllN/A91 µA/MHzN/A
Any
ON
except
All except RF and RNGN/A90 µA/MHzTBD µs
PLL
ON
(3)
AnyAll
Any interrupt
or event
28 µA/MHzTBD cycles
(1)
STM32WB15CCFunctional overview
Wakeup time
Any
except
All except RF and RNG
LPSleepLPRNoON
(2)
ON
(3)
PLL
RF, BOR, PVD, PVM, RTC,
DS13258 Rev 129/121
Stop 0MRNoOFFON
LSE, LSI,
(4)
HSE
(5)
HSI16
,
IWDG, COMPx (x=1),
USART1
I2C1
(6)
(7)
, LPTIMx (x=1, 2), SMPS
All other peripherals are frozen.
RF, BOR, PVD, PVM, RTC,
IWDG, COMPx (x=1),
USART1
I2C1
(6)
(7)
, LPTIMx (x=1, 2)
Stop 1LPRNoOFFON
LSE, LSI,
(4)
HSE
(5)
HSI16
,
All other peripherals are frozen.
RF, BOR, RTC, IWDG
All other peripherals are
powered off.
I/O configuration can be floating,
Standby
LPR
SRAMs
ON
NoOFF
OFFOFF
LSE, LSI
pull-up or pull-down
RTC
All other peripherals are
ShutdownOFFNoOFFOFFLSE
powered off.
I/O configuration can be floating,
pull-up or pull-down
1. Typical current at VDD = 1.8 V, 25 °C. for STOPx, SHUTDOWN and Standby, else VDD = 3.3 V, 25 °C.
, LPUART1
, LPUART1
(9)
(6)
(6)
Any interrupt
or event
Reset pin, all I/Os, RF,
BOR, PVD, PVM,
RTC, IWDG, COMPx
,
(x=1), USART1,
LPUART1, I2C1,
LPTIMx (x=1, 2)
Reset pin, all I/Os
RF, BOR, PVD, PVM,
RTC, IWDG, COMPx
,
(x=1), USART1,
LPUART1, I2C1,
LPTIMx (x=1, 2)
RF, Reset pin
Two I/Os (WKUPx)
BOR, RTC, IWDG
Two I/Os (WKUPx)
RTC
27 µA/MHzTBD cycles
100 µATBD µs
3.05 µA w/o RTC
3.35 µA w RTC
0.335 µA w/o RTC
0.61 µA w RTC
(8)
0.243 µA w/o RTC
0.518 µA w RTC
(8)
0.012 µA w/o RTC
,
0.210 µA w/ RTC
TBD µs
TBD µs
-
30/121DS13258 Rev 1
2. The Flash memory controller can be placed in power-down mode if the RF subsystem is not in use and all the program is run from the SRAM.
3. The SRAM1 and SRAM2 clocks can be gated off independently.
4. HSE (32 MHz) automatically used when RF activity is needed by the RF subsystem.
5. HSI16 (16 MHz) automatically used by some peripherals.
6. U(S)ART and LPUART reception is functional in Stop mode, and generates a wakeup interrupt on Start, Address match or Received frame event.
7. I2C address detection is functional in Stop mode, and generates a wakeup interrupt in case of address match.
8. I/Os with wakeup from Standby/Shutdown capability: PA0, PA2.
9. I/Os can be configured with internal pull-up, pull-down or floating but the configuration is lost immediately when exiting the Shutdown mode.
Functional overviewSTM32WB15CC
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