up to 1MB Flash, 320KB SRAM, USB OTG FS, audio, ext. SMPS
Features
Ultra-low-power with FlexPowerControl
– 1.71 V to 3.6 V power supply
– -40 °C to 85/125 °C temperature range
– 320 nA in V
32x32-bit backup registers
– 25 nA Shutdown mode (5 wakeup pins)
– 108 nA Standby mode (5 wakeup pins)
– 426 nA Standby mode with RTC
– 2.57 µA Stop 2 mode, 2.86 µA Stop 2 with
RTC
– 91 µA/MHz run mode (LDO Mode)
– 37 μA/MHz run mode (@3.3 V SMPS
Mode)
– Batch acquisition mode (BAM)
– 5 µs wakeup from Stop mode
– Brown out reset (BOR) in all modes except
shutdown
– Interconnect matrix
Core: Arm
®
Adaptive real-time accelerator (ART
Accelerator™) allowing 0-wait-state execution
from Flash memory, frequency up to 80 MHz,
MPU, 100 DMIPS and DSP instructions
Performance benchmark
– 1.25 DMIPS/MHz (Drystone 2.1)
– 273.55 Coremark
80 MHz)
Energy benchmark
– 279 ULPMark™ CP score
– 80.2 ULPMark™ PP score
16 x timers: 2 x 16-bit advanced motor-control,
2 x 32-bit and 5 x 16-bit general purpose,
2 x 16-bit basic, 2 x low-power 16-bit timers
(available in Stop mode), 2 x watchdogs,
SysTick timer
RTC with HW calendar, alarms and calibration
mode: supply for RTC and
BAT
32-bit Cortex®-M4 CPU with FPU,
®
(3.42 Coremark/MHz @
STM32L496xx
Datasheet - production data
Up to 136 fast I/Os, most 5 V-tolerant, up to 14
I/Os with independent supply down to 1.08 V
Dedicated Chrom-ART Accelerator™ for
enhanced graphic content creation (DMA2D)
8- to 14-bit camera interface up to 32 MHz
(black&white) or 10 MHz (color)
Memories
– Up to 1 MB Flash, 2 banks read-while-
write, proprietary code readout protection
– 320 KB of SRAM including 64 KB with
hardware parity check
– External memory interface for static
memories supporting SRAM, PSRAM,
NOR and NAND memories
– 1 x LPUART
– 3 x SPIs (4 x SPIs with the Quad SPI)
– 2 x CAN (2.0B Active) and SDMMC
– SWPMI single wire protocol master I/F
– IRTIM (Infrared interface)
14-channel DMA controller
True random number generator
CRC calculation unit, 96-bit unique ID
Development support: serial wire debug
This datasheet provides the ordering information and mechanical device characteristics of
the STM32L496xx microcontrollers.
This document should be read in conjunction with the STM32L47x, STM32L48x,
STM32L49x and STM32L4Ax reference manual (RM0351). The reference manual is
available from the STMicroelectronics website www.st.com.
For information on the Arm
Reference Manual, available from the www.arm.com website.
®(a)
Cortex®-M4 core, please refer to the Cortex®-M4 Technical
a. Arm is a registered trademark of Arm Limited (or its subsidiaries) in the US and/or elsewhere.
DS11585 Rev 1113/281
61
DescriptionSTM32L496xx
2 Description
The STM32L496xx devices are the ultra-low-power microcontrollers based on the high-
performance Arm
The Cortex-M4 core features a Floating point unit (FPU) single precision which supports all
®
Arm
single-precision data-processing instructions and data types. It also implements a full
®
Cortex®-M4 32-bit RISC core operating at a frequency of up to 80 MHz.
set of DSP instructions and a memory protection unit (MPU) which enhances application
security.
The STM32L496xx devices embed high-speed memories (up to 1 Mbyte of Flash memory,
320
Kbyte of SRAM), a flexible external memory controller (FSMC) for static memories (for
devices with packages of 100 pins and more), a Quad SPI flash memories interface
(available on all packages) and an extensive range of enhanced I/Os and peripherals
connected to two APB buses, two AHB buses and a 32-bit multi-AHB bus matrix.
The STM32L496xx devices embed several protection mechanisms for embedded Flash
memory and SRAM: readout protection, write protection, proprietary code readout
protection and Firewall.
The devices offer up to three fast 12-bit ADCs (5 Msps), two comparators, two operational
amplifiers, two DAC channels, an internal voltage reference buffer, a low-power RTC, two
general-purpose 32-bit timer, two 16-bit PWM timers dedicated to motor control, seven
general-purpose 16-bit timers, and two 16-bit low-power timers. The devices support four
digital filters for external sigma delta modulators (DFSDM).
In addition, up to 24 capacitive sensing channels are available. The devices also embed an
integrated LCD driver 8x40 or 4x44, with internal step-up converter.
They also feature standard and advanced communication interfaces.
Four I2Cs
Three SPIs
Three USARTs, two UARTs and one Low-Power UART.
Two SAIs (Serial Audio Interfaces)
One SDMMC
Two CAN
One USB OTG full-speed
One SWPMI (Single Wire Protocol Master Interface)
Camera interface
DMA2D controller
The STM32L496xx operates in the -40 to +85 °C (+105 °C junction), -40 to +125 °C
(+130
°C junction) temperature ranges from a 1.71 to 3.6 V VDD power supply when using
internal LDO regulator and a 1.05 to 1.32V V
DD12
supply. A comprehensive set of power-saving modes allows the design of low-power
applications.
Some independent power supplies are supported: analog independent supply input for
ADC, DAC, OPAMPs and comparators, 3.3
V dedicated supply input for USB and up to 14
I/Os can be supplied independently down to 1.08V. A VBAT input allows to backup the RTC
and backup registers. Dedicated V
power supplies can be used to bypass the internal
DD12
LDO regulator when connected to an external SMPS.
14/281DS11585 Rev 11
power supply when using external SMPS
STM32L496xxDescription
The STM32L496xx family offers six packages from 64-pin to 169-pin packages.
Table 2. STM32L496xx family device features and peripheral counts
1. For the LQFP100 and WLCSP100 packages, only FMC Bank1 is available. Bank1 can only support a multiplexed
NOR/PSRAM memory using the NE1 Chip Select.
2. Only up to 13 data bits.
3. In case external SMPS package type is used, 2 GPIO's are replaced by VDD12 pins to connect the SMPS power supplies
hence reducing the number of available GPIO's by 2.
)1.71 to 3.6 V
DD
1.05 to 1.32 V
Ambient operating temperature: -40 to 85 °C / -40 to 125 °C
Junction temperature: -40 to 105 °C / -40 to 130 °C
LQFP100
WLCSP100
LQFP64
16/281DS11585 Rev 11
STM32L496xxDescription
MS50053V1
USB
OTG
Flash
up to
1 MB
Flexible static memory controller (FSMC):
SRAM, PSRAM, NOR Flash,
NAND Flash
GPIO PORT A
AHB/APB2
EXT IT. WKUP
114 AF
PA[15:0]
TIM1 / PWM
3 compl. channels (TIM1_CH[1:3]N),
4 channels (TIM1_CH[1:4]),
ETR, BKIN, BKIN2 as AF
USART1
RX, TX, CK,CTS,
RTS as AF
SPI1
MOSI, MISO,
SCK, NSS as AF
APB260MHz
APB130MHz
MOSI, MISO, SCK, NSS as AF
DAC1_OUT1
ITF
WWDG
RTC_TS
OSC32_IN
OSC32_OUT
VDDA, VSSA
VDD, VSS, NRST
smcard
IrDA
16b
SDIO / MMC
D[7:0]
CMD, CK as AF
VBAT = 1.55 to 3.6 V
SCL, SDA, SMBA as AF
JTAG & SW
ARM Cortex-M4
80 MHz
FPU
NVIC
ETM
MPU
TRACECLK
TRACED[3:0]
DMA2
ART
ACCEL/
CACHE
CLK, NE[4:1], NL, NBL[1:0],
A[25:0], D[15:0], NOE, NWE,
NWAIT, NCE3, INT3 as AF
RNG
DP
DM
SCL, SDA, INTN, ID, VBUS, SOF
FIFO
@ VDDA
BOR
Supply
supervision
PVD, PVM
Int
reset
XTAL 32 kHz
MANAGT
RTC
FCLK
Standby
interface
IWDG
@VBAT
@ VDD
@VDD
AWU
Reset & clock
control
PCLKx
VDD = 1.71 to 3.6 V
VSS
Voltage
regulator
3.3 to 1.2 V
VDD
Power management
@ VDD
RTC_TAMPx
Backup register
AHB bus-matrix
TIM15
2 channels,
1 compl. channel, BKIN as
AF
DAC1
TIM6
TIM7
TIM2
TIM3
TIM4
TIM5
USART2
USART3
I2C1/SMBUS
D-BUS
APB1 80 MHz (max)
SRAM 256 KB
SRAM 64 KB
NJTRST, JTDI,
JTCK/SWCLK
JTDO/SWD, JTDO
I-BUS
S-BUS
DMA1
PB[15:0]
PC[15:0]
PD[15:0]
PE[15:0]
PF[15:0]
PG[15:0]
PH[15:0]
GPIO PORT B
GPIO PORT C
GPIO PORT D
GPIO PORT E
GPIO PORT F
GPIO PORT G
GPIO PORT H
TIM8 / PWM
16b
16b
TIM16
16b
TIM17
16b
3 compl. Channels (TIM1_CH[1:3]N),
4 channels (TIM1_CH[1:4]),
ETR, BKIN, BKIN2 as AF
1 channel,
1 compl. channel, BKIN as AF
1 channel,
1 compl. channel, BKIN as AF
DAC1_OUT2
16b
16b
SCL, SDA, SMBA as AF
SCL, SDA, SMBA as AF
MOSI, MISO, SCK, NSS as AF
TX, RX as AF
RX, TX, CTS, RTS as AF
RX, TX, CTS, RTS as AF
RX, TX, CK, CTS, RTS as AF
RX, TX, CK, CTS, RTS as AF
smcard
IrDA
smcard
IrDA
32b
16b
16b
32b
4 channels, ETR as AF
4 channels, ETR as AF
4 channels, ETR as AF
4 channels, ETR as AF
AHB/APB1
OSC_IN
OSC_OUT
HCLKx
XTAL OSC
4- 48MHz
8 analog inputs common to the 3 ADCs
VREF+
USART2MBps
Temperature sensor
ADC1
ADC2
ADC3
IF
ITF
@ VDDA
8 analog inputs common to the ADC1 & 2
8 analog inputs for ADC3
SAI1
MCLK_A, SD_A, FS_A, SCK_A, EXTCLK
MCLK_B, SD_B, FS_B, SCK_B as AF
SAI2
MCLK_A, SD_A, FS_A, SCK_A, EXTCLK
MCLK_B, SD_B, FS_B, SCK_B as AF
DFSDM
SDCKIN[7:0], SDDATIN[7:0],
SDCKOUT,SDTRIG as AF
Touch sensing controller
8 Groups of 4 channels max as AF
OUT, INN, INP
LCD 8x40
LPUART1
SWPMI
LPTIM1
LPTIM2
SEGx, COMx as AF
RX, TX, CTS, RTS as AF
SWP
IN1, IN2, OUT, ETR as AF
IN1, OUT, ETR as AF
RC HSI
RC LSI
PLL 1&2&3
MSI
Quad SPI memory interface
D0[3:0], D1[3:0],
CLK0, CLK1, CS
@ VDDUSB
COMP1
INP, INN, OUT
COMP2
INP, INN, OUT
@ VDDA
RTC_OUT
VDDIO, VDDUSB
FIFO
PHY
AHB1 80 MHz
CRC
OUT, INN, INP
I2C2/SMBUS
I2C3/SMBUS
OpAmp1
SP3
SP2
UART5
UART4
LCD Booster
V
LCD
V
LCD
= 2.5V to 3.6V
APB2 80MHz
AHB2 80 MHz
OpAmp2
@VDDA
Firewall
VREF Buffer
@ VDDA
@ VDD
Camera Interface
FIFO
HSYNC, VSYNC,
PIXCLK, D[13:0]
CHROM-ART
DMA2D
FIFO
PI[11:0]
GPIO PORT I
TX, RX as AF
bxCAN1
SCL, SDA, SMBA as AF
I2C4/SMBUS
HSI48
bxCAN1
FIFO
CRS
CRS_SYNC
VDD12
VDD12 = 1.05 to 1.32 V
(1)
1. Only available when using external SMPS supply mode
Figure 1. STM32L496xx block diagram
Note:AF: alternate function on I/O pins.
DS11585 Rev 1117/281
61
Functional overviewSTM32L496xx
3 Functional overview
3.1 Arm® Cortex®-M4 core with FPU
The Arm® Cortex®-M4 with FPU processor is the latest generation of Arm® processors for
embedded systems. It was developed to provide a low-cost platform that meets the needs of
MCU implementation, with a reduced pin count and low-power consumption, while
delivering outstanding computational performance and an advanced response to interrupts.
The Arm® Cortex®-M4 with FPU 32-bit RISC processor features exceptional codeefficiency, delivering the high-performance expected from an Arm
usually associated with 8- and 16-bit devices.
The processor supports a set of DSP instructions which allow efficient signal processing and
complex algorithm execution.
Its single precision FPU speeds up software development by using metalanguage
development tools, while avoiding saturation.
With its embedded Arm® core, the STM32L496xx family is compatible with all Arm® tools
and software.
Figure 1 shows the general block diagram of the STM32L496xx family devices.
The ART Accelerator™ is a memory accelerator which is optimized for STM32 industrystandard Arm
the Arm
processor to wait for the Flash memory at higher frequencies.
To release the processor near 100 DMIPS performance at 80MHz, the accelerator
implements an instruction prefetch queue and branch cache, which increases program
execution speed from the 64-bit Flash memory. Based on CoreMark benchmark, the
performance achieved thanks to the ART accelerator is equivalent to 0 wait state program
execution from Flash memory at a CPU frequency up to 80 MHz.
®
®
Cortex®-M4 processors. It balances the inherent performance advantage of
Cortex®-M4 over Flash memory technologies, which normally requires the
3.3 Memory protection unit
The memory protection unit (MPU) is used to manage the CPU accesses to memory to
prevent one task to accidentally corrupt the memory or resources used by any other active
task. This memory area is organized into up to 8 protected areas that can in turn be divided
up into 8 subareas. The protection area sizes are between 32 bytes and the whole 4
gigabytes of addressable memory.
The MPU is especially helpful for applications where some critical or certified code has to be
protected against the misbehavior of other tasks. It is usually managed by an RTOS (realtime operating system). If a program accesses a memory location that is prohibited by the
MPU, the RTOS can detect it and take action. In an RTOS environment, the kernel can
dynamically update the MPU area setting, based on the process to be executed.
The MPU is optional and can be bypassed for applications that do not need it.
18/281DS11585 Rev 11
STM32L496xxFunctional overview
3.4 Embedded Flash memory
STM32L496xx devices feature up to 1 Mbyte of embedded Flash memory available for
storing programs and data. The Flash memory is divided into two banks allowing readwhile-write operations. This feature allows to perform a read operation from one bank while
an erase or program operation is performed to the other bank. The dual bank boot is also
supported. Each bank contains 256 pages of 2
Flexible protections can be configured thanks to option bytes:
Readout protection (RDP) to protect the whole memory. Three levels are available:
–Level 0: no readout protection
–Level 1: memory readout protection: the Flash memory cannot be read from or
written to if either debug features are connected, boot in RAM or bootloader is
selected
–Level 2: chip readout protection: debug features (Cortex-M4 JTAG and serial
wire), boot in RAM and bootloader selection are disabled (JTAG fuse). This
selection is irreversible.
Table 3. Access status versus readout protection level and execution modes
Kbyte.
Area
Main
memory
System
memory
Option
bytes
Backup
registers
SRAM2
1. Erased when RDP change from Level 1 to Level 0.
Protection
level
1YesYesYesNoNoNo
2YesYesYesN/AN/AN/A
1YesNoNoYesNoNo
2YesNoNoN/AN/AN/A
1YesYesYesYesYesYes
2YesNoNoN/AN/AN/A
1YesYesN/A
2YesYesN/AN/AN/AN/A
1YesYesYes
2YesYesYesN/AN/AN/A
User execution
ReadWriteEraseReadWriteErase
(1)
(1)
Debug, boot from RAM or boot
from system memory (loader)
NoNoN/A
NoNoNo
Write protection (WRP): the protected area is protected against erasing and
programming. Two areas per bank can be selected, with 2-Kbyte granularity.
Proprietary code readout protection (PCROP): a part of the flash memory can be
protected against read and write from third parties. The protected area is execute-only:
it can only be reached by the STM32 CPU, as an instruction code, while all other
accesses (DMA, debug and CPU data read, write and erase) are strictly prohibited.
One area per bank can be selected, with 64-bit granularity. An additional option bit
(PCROP_RDP) allows to select if the PCROP area is erased or not when the RDP
protection is changed from Level 1 to Level 0.
(1)
(1)
DS11585 Rev 1119/281
61
Functional overviewSTM32L496xx
The whole non-volatile memory embeds the error correction code (ECC) feature supporting:
single error detection and correction
double error detection.
The address of the ECC fail can be read in the ECC register
3.5 Embedded SRAM
STM32L496xx devices feature 320 Kbyte of embedded SRAM. This SRAM is split into two
blocks:
256 Kbyte mapped at address 0x2000 0000 (SRAM1)
64 Kbyte located at address 0x1000 0000 with hardware parity check (SRAM2).
This memory is also mapped at address 0x2004 0000, offering a contiguous address
space with the SRAM1.
This block is accessed through the ICode/DCode buses for maximum performance.
These 64 Kbyte SRAM can also be retained in Standby mode.
The SRAM2 can be write-protected with 1 Kbyte granularity.
The memory can be accessed in read/write at CPU clock speed with 0 wait states.
20/281DS11585 Rev 11
STM32L496xxFunctional overview
MSv38030V3
ARM
®
CORTEX
®
-M4 with FPU
DMA1DMA2
FMC
AHB2
peripherals
AHB1
peripherals
SRAM2
FLASH
1 MB
ACCEL
S0S1S2S3S4
M0M1M2M3M4M5M6
ICode
DCode
QUADSPI
M7
DMA2D
S5
BusMatrix-S
128KB
128KB
SRAM1
3.6 Multi-AHB bus matrix
The 32-bit multi-AHB bus matrix interconnects all the masters (CPU, DMAs and the
DMA2D) and the slaves (Flash memory, RAM, FMC, QUADSPI, AHB and APB peripherals)
and ensures a seamless and efficient operation even when several high speed peripherals
work simultaneously.
Figure 2. Multi-AHB bus matrix
3.7 Firewall
The device embeds a Firewall which protects code sensitive and secure data from any
access performed by a code executed outside of the protected areas.
Each illegal access generates a reset which kills immediately the detected intrusion.
DS11585 Rev 1121/281
61
Functional overviewSTM32L496xx
The Firewall main features are the following:
Three segments can be protected and defined thanks to the Firewall registers:
–Code segment (located in Flash or SRAM1 if defined as executable protected
area)
–Non-volatile data segment (located in Flash)
–Volatile data segment (located in SRAM1)
The start address and the length of each segments are configurable:
–Code segment: up to 1024 Kbyte with granularity of 256 bytes
–Non-volatile data segment: up to 1024 Kbyte with granularity of 256 bytes
–Volatile data segment: up to 256 Kbyte of SRAM1 with a granularity of 64 bytes
Specific mechanism implemented to open the Firewall to get access to the protected
areas (call gate entry sequence)
Volatile data segment can be shared or not with the non-protected code
Volatile data segment can be executed or not depending on the Firewall configuration
The Flash readout protection must be set to level 2 in order to reach the expected level of
protection.
3.8 Boot modes
At startup, BOOT0 pin and nBOOT1 option bit are used to select one of three boot options:
Boot from user Flash
Boot from system memory
Boot from embedded SRAM
BOOT0 value may come from the PH3-BOOT0 pin or from an option bit depending on the
value of a user option bit to free the GPIO pad if needed.
A Flash empty check mechanism is implemented to force the boot from system flash if the
first flash memory location is not programmed and if the boot selection is configured to boot
from main flash.
The boot loader is located in system memory. It is used to reprogram the Flash memory by
using USART, I2C, SPI, CAN or USB OTG FS in Device mode through DFU (device
firmware upgrade).
3.9 Cyclic redundancy check calculation unit (CRC)
The CRC (cyclic redundancy check) calculation unit is used to get a CRC code using a
configurable generator polynomial value and size.
Among other applications, CRC-based techniques are used to verify data transmission or
storage integrity. In the scope of the EN/IEC 60335-1 standard, they offer a means of
verifying the Flash memory integrity. The CRC calculation unit helps compute a signature of
the software during runtime, to be compared with a reference signature generated at linktime and stored at a given memory location.
22/281DS11585 Rev 11
STM32L496xxFunctional overview
3.10 Power supply management
3.10.1 Power supply schemes
VDD = 1.71 to 3.6 V: external power supply for I/Os (V
), the internal regulator and
DDIO1
the system analog such as reset, power management and internal clocks. It is provided
externally through VDD pins.
V
= 1.05 to 1.32 V: external power supply bypassing internal regulator when
DD12
connected to an external SMPS. It is provided externally through VDD12 pins and only
available on packages with the external SMPS supply option. VDD12 does not require
any external decoupling capacitance and cannot support any external load.
V
V
V
V
= 1.62 V (ADCs/COMPs) / 1.8 (DAC/OPAMPs) to 3.6 V: external analog power
DDA
supply for ADCs, DAC, OPAMPs, Comparators and Voltage reference buffer. The V
voltage level is independent from the V
= 3.0 to 3.6 V: external independent power supply for USB transceivers. The
DDUSB
V
voltage level is independent from the VDD voltage.
DDUSB
= 1.08 to 3.6 V: external power supply for 14 I/Os (PG[15:2]). The V
DDIO2
voltage level is independent from the V
= 2.5 to 3.6 V: the LCD controller can be powered either externally through VLCD
LCD
voltage.
DD
voltage.
DD
DDIO2
DDA
pin, or internally from an internal voltage generated by the embedded step-up
converter.
V
Note:When the functions supplied by V
should preferably be shorted to V
= 1.55 to 3.6 V: power supply for RTC, external clock 32 kHz oscillator and
BAT
backup registers (through power switch) when V
DDA
DD
, V
.
DDUSB
or V
is not present.
DD
are not used, these supplies
DDIO2
Note:If these supplies are tied to ground, the I/Os supplied by these power supplies are not 5 V
tolerant (refer to
Table 19: Voltage characteristics).
Note:V
DDIOx
V
DDIO2
is the I/Os general purpose digital functions supply. V
, with V
During power-up and power-down phases, the following power sequence requirements
must be respected:
When VDD is below 1 V, other power supplies (V
remain below V
When V
During the power-down phase, VDD can temporarily become lower than other supplies only
if the energy provided to the MCU remains below 1
capacitors to be discharged with different time constants during the power-down transient
phase.
24/281DS11585 Rev 11
+ 300 mV.
DD
DD
is above 1 V, all power supplies are independent.
DDA
, V
DDUSB
, V
DDIO2
, V
LCD
) must
mJ; this allows external decoupling
STM32L496xxFunctional overview
MSv47490V1
0.3
1
V
BOR0
3.6
Operating modePower-onPower-downtime
V
V
DDX
(1)
V
DD
Invalid supply areaV
DDX
< V
DD
+ 300 mV
V
DDX
independent from V
DD
Figure 4. Power-up/down sequence
1. V
refers to any power supply among V
DDX
3.10.2 Power supply supervisor
The device has an integrated ultra-low-power brown-out reset (BOR) active in all modes
except Shutdown and ensuring proper operation after power-on and during power down.
The device remains in reset mode when the monitored supply voltage V
specified threshold, without the need for an external reset circuit.
The lowest BOR level is 1.71V at power on, and other higher thresholds can be selected
through option bytes.The device features an embedded programmable voltage detector
(PVD) that monitors the V
interrupt can be generated when V
higher than the VPVD threshold. The interrupt service routine can then generate a warning
message and/or put the MCU into a safe state. The PVD is enabled by software.
In addition, the device embeds a Peripheral Voltage Monitor which compares the
independent supply voltages V
that the peripheral is in its functional supply range.
power supply and compares it to the VPVD threshold. An
DD
, V
DDA
drops below the VPVD threshold and/or when VDD is
DD
, V
DDA
DDUSB
DDUSB
, V
, V
DDIO2
, V
LCD
.
is below a
DD
DDIO2
with a fixed threshold in order to ensure
DS11585 Rev 1125/281
61
Functional overviewSTM32L496xx
3.10.3 Voltage regulator
Two embedded linear voltage regulators supply most of the digital circuitries: the main
regulator (MR) and the low-power regulator (LPR).
The MR is used in the Run and Sleep modes and in the Stop 0 mode.
The LPR is used in Low-Power Run, Low-Power Sleep, Stop 1 and Stop 2 modes. It is
also used to supply the 64 Kbyte SRAM2 in Standby with SRAM2 retention.
Both regulators are in power-down in Standby and Shutdown modes: the regulator
output is in high impedance, and the kernel circuitry is powered down thus inducing
zero consumption.
The ultralow-power STM32L496xx supports dynamic voltage scaling to optimize its power
consumption in run mode. The voltage from the Main Regulator that supplies the logic
(V
There are two power consumption ranges:
Range 1 with the CPU running at up to 80 MHz.
Range 2 with a maximum CPU frequency of 26 MHz. All peripheral clocks are also
) can be adjusted according to the system’s maximum operating frequency.
CORE
limited to 26 MHz.
The V
can be supplied by the low-power regulator, the main regulator being switched
CORE
off. The system is then in Low-power run mode.
Low-power run mode with the CPU running at up to 2 MHz. Peripherals with
independent clock can be clocked by HSI16.
When the MR is in use, the STM32L496xx with the external SMPS option allows to force an
external V
When V
DD12
supply on the VDD12 supply pins.
CORE
is forced by an external source and is higher than the output of the internal
LDO, the current is taken from this external supply and the overall power efficiency is
significantly improved if using an external step down DC/DC converter.
3.10.4 Low-power modes
The ultra-low-power STM32L496xx supports seven low-power modes to achieve the best
compromise between low-power consumption, short startup time, available peripherals and
available wakeup sources.
26/281DS11585 Rev 11
ModeRegulator
(1)
Table 4. STM32L496xx modes overview
CPU Flash SRAM ClocksDMA & Peripherals
(2)
Wakeup sourceConsumption
(3)
STM32L496xxFunctional overview
Wakeup time
DS11585 Rev 1127/281
MR range 1
SMPS range 2 High 40µA/MHz
Run
YesON
MR range2
SMPS range 2 Low39µA/MHz
LPRunLPRYesON
MR range 1
SMPS range 2 High11.5 µA/MHz
Sleep
NoON
MR range2
SMPS range 2 Low13 µA/MHz
LPSleepLPRNoON
MR Range 1
Stop 0
MR Range 2
(8)
NoOFFON
(8)
(4)
(4)
(4)
(4)
ONAny
ON
except
(7)
ON
(7)
ON
except
LSE
Any
PLL
Any
Any
PLL
LSI
All
108µA/MHz
N/A
93 µA/MHz
All except OTG_FS, RNG
All except OTG_FS, RNGN/A129 µA/MHz
32 µA/MHz
All
Any interrupt or
event
30 µA/MHz
All except OTG_FS, RNG
All except OTG_FS, RNG
Any interrupt or
event
51 µA/MHz6 cycles
BOR, PVD, PVM
RTC,LCD, IWDG
COMPx (x=1,2)
DAC1
OPAMPx (x=1,2)
USARTx (x=1...5)
LPUART1
I2Cx (x=1...4)
(9)
(9)
(10)
LPTIMx (x=1,2)
***
All other peripherals are
Reset pin, all I/Os
BOR, PVD, PVM
RTC, LCD, IWDG
COMPx (x=1..2)
USARTx (x=1...5)
LPUART1
I2Cx (x=1...4)
(9)
(10)
LPTIMx (x=1,2)
OTG_FS
SWPMI1
(11)
(12)
TBD
(9)
127 µA
frozen.
(5)
N/A
(6)
to Range 1: 4 µs
to Range 2: 64 µs
(5)
6 cycles
(6)
2.7 µs in SRAM
6.2 µs in Flash
28/281DS11585 Rev 11
ModeRegulator
(1)
CPU Flash SRAM ClocksDMA & Peripherals
Table 4. STM32L496xx modes overview (continued)
(2)
Wakeup sourceConsumption
(3)
Wakeup time
Functional overviewSTM32L496xx
BOR, PVD, PVM
Reset pin, all I/Os
BOR, PVD, PVM
RTC, LCD, IWDG
COMPx (x=1..2)
USARTx (x=1...5)
LPUART1
I2Cx (x=1...4)
(9)
(10)
LPTIMx (x=1,2)
OTG_FS
SWPMI1
(11)
(12)
(9)
11. 2 µA w/o RTC
11.8 µA w RT C
6.6 µs in SRAM
7.8 µs in Flash
Stop 1LPRNoOffON
LSE
LSI
RTC, LCD, IWDG
COMPx (x=1,2)
DAC1
OPAMPx (x=1,2)
USARTx (x=1...5)
LPUART1
I2Cx (x=1...4)
(9)
(9)
(10)
LPTIMx (x=1,2)
***
All other peripherals are
frozen.
BOR, PVD, PVM
Reset pin, all I/Os
BOR, PVD, PVM
RTC, LCD, IWDG
COMPx (x=1..2)
(10)
I2C3
LPUART1
(9)
LPTIM1
2.57 µA w/o RTC
2.86 µA w/RTC
6.8 µs in SRAM
8.2 µs in Flash
Stop 2LPRNoOffON
LSE
LSI
RTC, LCD, IWDG
COMPx (x=1..2)
(10)
I2C3
LPUART1
(9)
LPTIM1
***
All other peripherals are
frozen.
ModeRegulator
(1)
Table 4. STM32L496xx modes overview (continued)
CPU Flash SRAM ClocksDMA & Peripherals
(2)
Wakeup sourceConsumption
(3)
STM32L496xxFunctional overview
Wakeup time
BOR, RTC, IWDG
***
All other peripherals are
powered off.
***
I/O configuration can be
Reset pin
5 I/Os (WKUPx)
BOR, RTC, IWDG
(13)
Standby
LPR
OFF
Power
ed Off
Off
SRAM
2 ON
Power
ed
Off
LSE
LSI
floating, pull-up or pull-down
RTC
***
All other peripherals are
powered off.
I/O configuration can be
floating, pull-up or pull-
down
= 1.10 V
CORE
= 1.05 V
CORE
***
(14)
ShutdownOFF
Power
ed Off
Off
Power
ed
Off
LSE
DS11585 Rev 1129/281
1. LPR means Main regulator is OFF and Low-power regulator is ON.
2. All peripherals can be active or clock gated to save power consumption.
3. Typical current at V
LPRun/LPSleep.
4. The Flash memory can be put in power-down and its clock can be gated off when executing from SRAM.
5. Theoretical value based on V
6. Theoretical value based on V
7. The SRAM1 and SRAM2 clocks can be gated on or off independently.
8. SMPS mode can be used in STOP0 Mode, but no significant power gain can be expected.
9. U(S)ART and LPUART reception is functional in Stop mode, and generates a wakeup interrupt on Start, address match or received frame event.
10. I2C address detection is functional in Stop mode, and generates a wakeup interrupt in case of address match.
11. OTG_FS wakeup by resume from suspend and attach detection protocol event.
12. SWPMI1 wakeup by resume from suspend.
13. The I/Os with wakeup from Standby/Shutdown capability are: PA0, PC13, PE6, PA2, PC5.
14. I/Os can be configured with internal pull-up, pull-down or floating in Shutdown mode but the configuration is lost when exiting the Shutdown mode.
= 1.8 V, 25°C. Consumptions values provided running from SRAM, Flash memory Off, 80 MHz in Range 1, 26 MHz in Range 2, 2 MHz in
DD
= 3.3 V, DC/DC Efficiency of 85%, V
DD
= 3.3 V, DC/DC Efficiency of 85%, V
DD
Reset pin
5 I/Os (WKUPx)
RTC
(14)
0.48 µA w/o RTC
0.78 µA w/ RTC
0.11 µA w/o RTC
0.42 µA w/ RTC
0.03 µA w/o RTC
0.23 µA w/ RTC
15.3 µs
306 µs
Functional overviewSTM32L496xx
By default, the microcontroller is in Run mode after a system or a power Reset. It is up to the
user to select one of the low-power modes described below:
Sleep mode
In Sleep mode, only the CPU is stopped. All peripherals continue to operate and can
wake up the CPU when an interrupt/event occurs.
Low-power run mode
This mode is achieved with V
supplied by the low-power regulator to minimize the
CORE
regulator's operating current. The code can be executed from SRAM or from Flash,
and the CPU frequency is limited to 2 MHz. The peripherals with independent clock can
be clocked by HSI16.
Low-power sleep mode
This mode is entered from the low-power run mode. Only the CPU clock is stopped.
When wakeup is triggered by an event or an interrupt, the system reverts to the lowpower run mode.
Stop 0, Stop 1 and Stop 2 modes
Stop mode achieves the lowest power consumption while retaining the content of
SRAM and registers. All clocks in the V
domain are stopped, the PLL, the MSI
CORE
RC, the HSI16 RC and the HSE crystal oscillators are disabled. The LSE or LSI is still
running.
The RTC can remain active (Stop mode with RTC, Stop mode without RTC).
Some peripherals with wakeup capability can enable the HSI16 RC during Stop mode
to detect their wakeup condition.
Three Stop modes are available: Stop 0, Stop 1 and Stop 2 modes. In Stop 2 mode,
most of the V
domain is put in a lower leakage mode.
CORE
Stop 1 offers the largest number of active peripherals and wakeup sources, a smaller
wakeup time but a higher consumption than Stop 2. In Stop 0 mode, the main regulator
remains ON, allowing a very fast wakeup time but with much higher consumption.
The system clock when exiting from Stop 0, Stop 1 or Stop 2 modes can be either MSI
up to 48 MHz or HSI16, depending on software configuration.
Standby mode
The Standby mode is used to achieve the lowest power consumption with BOR. The
internal regulator is switched off so that the V
domain is powered off. The PLL, the
CORE
MSI RC, the HSI16 RC and the HSE crystal oscillators are also switched off.
The RTC can remain active (Standby mode with RTC, Standby mode without RTC).
The brown-out reset (BOR) always remains active in Standby mode.
The state of each I/O during standby mode can be selected by software: I/O with
internal pull-up, internal pull-down or floating.
After entering Standby mode, SRAM1 and register contents are lost except for registers
in the Backup domain and Standby circuitry. Optionally, SRAM2 can be retained in
Standby mode, supplied by the low-power Regulator (Standby with SRAM2 retention
mode).
The device exits Standby mode when an external reset (NRST pin), an IWDG reset,
WKUP pin event (configurable rising or falling edge), or an RTC event occurs (alarm,
periodic wakeup, timestamp, tamper) or a failure is detected on LSE (CSS on LSE).
The system clock after wakeup is MSI up to 8 MHz.
30/281DS11585 Rev 11
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