up to 1MB Flash, 128 KB SRAM, USB OTG FS, LCD, ext. SMPS
Datasheet - production data
Features
• Ultra-low-power with FlexPowerControl
– 1.71 V to 3.6 V power supply
– -40 °C to 85/105/125 °C temperature range
– 300 nA in V
32x32-bit backup registers
– 30 nA Shutdown mode (5 wakeup pins)
– 120 nA Standby mode (5 wakeup pins)
– 420 nA Standby mode with RTC
– 1.1 µA Stop 2 mode, 1.4 µA with RTC
– 100 µA/MHz run mode (LDO Mode)
–39 A/MHz run mode (@3.3 V SMPS
Mode)
– Batch acquisition mode (BAM)
– 4 µs wakeup from Stop mode
– Brown out reset (BOR)
– Interconnect matrix
• Core: Arm
®
Adaptive real-time accelerator (ART
Accelerator™) allowing 0-wait-state execution
from Flash memory, frequency up to 80 MHz,
MPU, 100DMIPS and DSP instructions
This datasheet provides the ordering information and mechanical device characteristics of
the STM32L476xx microcontrollers.
This document should be read in conjunction with the STM32L4x6 reference manual
(RM0351). The reference manual is available from the STMicroelectronics website
www.st.com.
For information on the Arm
Reference Manual, available from the www.arm.com website.
®(a)
Cortex®-M4 core, please refer to the Cortex®-M4 Technical
a. Arm is a registered trademark of Arm Limited (or its subsidiaries) in the US and/or elsewhere.
DS10198 Rev 813/270
60
DescriptionSTM32L476xx
2 Description
The STM32L476xx devices are the ultra-low-power microcontrollers based on the high-
performance Arm
The Cortex-M4 core features a Floating point unit (FPU) single precision which supports all
®
Arm
single-precision data-processing instructions and data types. It also implements a full
®
Cortex®-M4 32-bit RISC core operating at a frequency of up to 80 MHz.
set of DSP instructions and a memory protection unit (MPU) which enhances application
security.
The STM32L476xx devices embed high-speed memories (Flash memory up to 1 Mbyte, up
to 128
Kbyte of SRAM), a flexible external memory controller (FSMC) for static memories
(for devices with packages of 100 pins and more), a Quad SPI flash memories interface
(available on all packages) and an extensive range of enhanced I/Os and peripherals
connected to two APB buses, two AHB buses and a 32-bit multi-AHB bus matrix.
The STM32L476xx devices embed several protection mechanisms for embedded Flash
memory and SRAM: readout protection, write protection, proprietary code readout
protection and Firewall.
The devices offer up to three fast 12-bit ADCs (5 Msps), two comparators, two operational
amplifiers, two DAC channels, an internal voltage reference buffer, a low-power RTC, two
general-purpose 32-bit timer, two 16-bit PWM timers dedicated to motor control, seven
general-purpose 16-bit timers, and two 16-bit low-power timers. The devices support four
digital filters for external sigma delta modulators (DFSDM).
In addition, up to 24 capacitive sensing channels are available. The devices also embed an
integrated LCD driver 8x40 or 4x44, with internal step-up converter.
They also feature standard and advanced communication interfaces.
The STM32L476xx operates in the -40 to +85 °C (+105 °C junction), -40 to +105 °C
(+125
°C junction) and -40 to +125 °C (+130 °C junction) temperature ranges from a 1.71 to
3.6
V VDD power supply when using internal LDO regulator and a 1.05 to 1.32V V
power supply when using external SMPS supply. A comprehensive set of power-saving
modes allows the design of low-power applications.
Some independent power supplies are supported: analog independent supply input for
ADC, DAC, OPAMPs and comparators, 3.3
V dedicated supply input for USB and up to 14
I/Os can be supplied independently down to 1.08V. A VBAT input allows to backup the RTC
and backup registers. Dedicated V
power supplies can be used to bypass the internal
DD12
LDO regulator when connected to an external SMPS.
The STM32L476xx family offers six packages from 64-pin to 144-pin packages.
14/270DS10198 Rev 8
DD12
STM32L476xxDescription
Table 2. STM32L476xx family device features and peripheral counts
Peripheral
Flash memory
STM32
L476Zx
512K
B
1MB
STM32
L476Qx
512K
B
1MB
STM32
L476Vx
256KB512K
B
1MB
512K
SRAM128KB
External memory
controller for static
YesYesYes
(1)
memories
Quad SPIYes
Advanced
control
General
purpose
2 (16-bit)
5 (16-bit)
2 (32-bit)
Basic2 (16-bit)
Timers
Low -power2 (16-bit)
SysTick
timer
1
Watchdog
timers
(indepen-
2
dent,
window)
SPI3
2
C3
I
Comm.
interfaces
USART
UART
LPUART
SAI2
3
2
1
CAN1
USB OTG
FS
Yes
SDMMCYes
SWPMIYes
STM32
L476Mx
1MB
B
STM32
L476Jx
512K
B
1MB
256KB512K
NoNoNo
STM32
L476Rx
B
1MB
Digital filters for sigmadelta modulators
Yes (4 filters)
Number of channels8
RTCYes
Tamper pins3222
LCD
COM x SEG
Yes
8x40 or
4x44
Yes
8x40 or
4x44
Yes
8x40 or 4x44
Yes
8x30 or
4x32
Yes
8x28 or
4x32
Yes
8x28 or 4x32
DS10198 Rev 815/270
60
DescriptionSTM32L476xx
Table 2. STM32L476xx family device features and peripheral counts (continued)
Peripheral
STM32
L476Zx
STM32
L476Qx
STM32
L476Vx
STM32
L476Mx
STM32
L476Jx
STM32
L476Rx
Random generatorYes
(2)
GPIOs
Wakeup pins
Nb of I/Os down to
114
5
14
109
5
14
82
65
5
0
4
6
57
51
4
6
4
0
1.08 V
Capacitive sensing
Number of channels
12-bit ADCs
Number of channels
242421121212
24
3
3
19
16
3
16
3
16
3
3
16
12-bit DAC channels2
Internal voltage
reference buffer
YesNo
Analog comparator2
Operational amplifiers2
Max. CPU frequency80 MHz
Operating voltage (V
Operating voltage
(V
)
DD12
Operating temperature
Packages
1. For the LQFP100 package, only FMC Bank1 is available. Bank1 can only support a multiplexed NOR/PSRAM memory
using the NE1 Chip Select.
2. In case external SMPS package type is used, 2 GPIO's are replaced by VDD12 pins to connect the SMPS power supplies
hence reducing the number of available GPIO's by 2.
)1.71 to 3.6 V
DD
1.05 to 1.32 V
Ambient operating temperature: -40 to 85 °C / -40 to 105 °C / -40 to 125 °C
Junction temperature: -40 to 105 °C / -40 to 125 °C / -40 to 130 °C
LQFP144
UFBGA144
UFBGA
132
LQFP100WLCSP81 WLCSP72LQFP64
16/270DS10198 Rev 8
STM32L476xxDescription
MS31263V8
USB
OTG
Flash
up to
1 MB
Flexible static memory controller (FSMC):
SRAM, PSRAM, NOR Flash,
NAND Flash
GPIO PORT A
AHB/APB2
EXT IT. WKUP
114 AF
PA[15:0]
TIM1 / PWM
3 compl. channels (TIM1_CH[1:3]N),
4 channels (TIM1_CH[1:4]),
ETR, BKIN, BKIN2 as AF
USART1
RX, TX, CK,CTS,
RTS as AF
SPI1
MOSI, MISO,
SCK, NSS as AF
APB260MHz
APB130MHz
MOSI, MISO, SCK, NSS as AF
DAC1_OUT1
ITF
WWDG
RTC_TS
OSC32_IN
OSC32_OUT
smcard
IrDA
16b
SDIO / MMC
D[7:0]
CMD, CK as AF
VBAT = 1.55 to 3.6 V
SCL, SDA, SMBA as AF
JTAG & SW
ARM Cortex-M4
80 MHz
FPU
NVIC
ETM
MPU
DMA2
ART
ACCEL/
CACHE
CLK, NE[4:1], NL, NBL[1:0],
A[25:0], D[15:0], NOE, NWE,
NWAIT, NCE3, INT3 as AF
RNG
FIFO
@ VDDA
BOR
Supply
supervision
PVD, PVM
Int
reset
XTAL 32 kHz
MANAGT
RTC
FCLK
Standby
interface
IWDG
@VBAT
@ VDD
@VDD
AWU
Reset & clock
control
PCLKx
Voltage
regulator
3.3 to 1.2 V
VDD
Power management
@ VDD
RTC_TAMPx
Backup register
AHB bus-matrix
TIM15
2 channels,
1 compl. channel, BKIN as AF
TIM6
TIM7
TIM2
TIM3
TIM4
TIM5
USART2
USART3
I2C1/SMBUS
D-BUS
FIFO
APB1 80 MHz (max)
SRAM 96 KB
SRAM 32 KB
I-BUS
S-BUS
DMA1
PB[15:0]
PC[15:0]
PD[15:0]
PE[15:0]
PF[15:0]
PG[15:0]
PH[1:0]
GPIO PORT B
GPIO PORT C
GPIO PORT D
GPIO PORT E
GPIO PORT F
GPIO PORT G
GPIO PORT H
TIM8 / PWM
16b
16b
TIM16
16b
TIM17
16b
3 compl. channels (TIM1_CH[1:3]N),
4 channels (TIM1_CH[1:4]),
ETR, BKIN, BKIN2 as AF
1 channel,
1 compl. channel, BKIN as AF
1 channel,
1 compl. channel, BKIN as AF
DAC1_OUT2
16b
16b
SCL, SDA, SMBA as AF
SCL, SDA, SMBA as AF
MOSI, MISO, SCK, NSS as AF
TX, RX as AF
RX, TX, CTS, RTS as AF
RX, TX, CTS, RTS as AF
RX, TX, CK, CTS, RTS as AF
RX, TX, CK, CTS, RTS as AF
smcard
IrDA
smcard
IrDA
32b
16b
16b
32b
4 channels, ETR as AF
4 channels, ETR as AF
4 channels, ETR as AF
4 channels, ETR as AF
AHB/APB1
OSC_IN
OSC_OUT
HCLKx
XTAL OSC
4- 16MHz
8 analog inputs common
to the 3 ADCs
VREF+
USART2MBps
Temperature sensor
ADC1
ADC2
ADC3
IF
ITF
@ VDDA
8 analog inputs common
to the ADC1 & 2
8 analog inputs for ADC3
SAI1
MCLK_A, SD_A, FS_A, SCK_A, EXTCLK
MCLK_B, SD_B, FS_B, SCK_B as AF
SAI2
MCLK_A, SD_A, FS_A, SCK_A, EXTCLK
MCLK_B, SD_B, FS_B, SCK_B as AF
DFSDM
SDCKIN[7:0], SDDATIN[7:0],
SDCKOUT,SDTRIG as AF
Touch sensing controller
8 Groups of
3 channels max as AF
VOUT, VINM, VINP
LCD 8x40
LPUART1
SWPMI1
LPTIM1
LPTIM2
SEGx, COMx as AF
RX, TX, CTS, RTS as AF
IO
RX, TX, SUSPEND as AF
IN1, IN2, OUT, ETR as AF
IN1, OUT, ETR as AF
RC HSI
RC LSI
PLL 1&2&3
MSI
Quad SPI memory interface
BK1_IO[3:0]
CLK
NCS
@ VDDUSB
COMP1
INP, INM, OUT
COMP2
INP, INM, OUT
@ VDDA
RTC_OUT
FIFO
PHY
AHB1 80 MHz
CRC
I2C2/SMBUS
I2C3/SMBUS
bxCAN1
OpAmp1
SP3
SP2
UART5
UART4
LCD Booster
V
LCD
V
LCD
= 2.5V to 3.6V
APB2 80MHz
AHB2 80 MHz
OpAmp2
@VDDA
Firewall
VREF Buffer
@ VDDA
@ VDD
DP
DM
SCL, SDA, INTN, ID, VBUS, SOF
VDD = 1.71 to 3.6 V
VSS
VDDA, VSSA
VDD, VSS, NRST
VDDIO2, VDDUSB
VOUT, VINM, VINP
TRACECLK
TRACED[3:0]
NJTRST, JTDI,
JTCK/SWCLK
JTDO/SWD, JTDO
VDD12 = 1.05 to 1.32 V
(1)
VDD12
1. Only available when using external SMPS supply mode.
DAC1
Figure 1. STM32L476xx block diagram
Note:AF: alternate function on I/O pins.
60
DS10198 Rev 817/270
Functional overviewSTM32L476xx
3 Functional overview
3.1 Arm® Cortex®-M4 core with FPU
The Arm® Cortex®-M4 with FPU processor is the latest generation of Arm® processors for
embedded systems. It was developed to provide a low-cost platform that meets the needs of
MCU implementation, with a reduced pin count and low-power consumption, while
delivering outstanding computational performance and an advanced response to interrupts.
The Arm® Cortex®-M4 with FPU 32-bit RISC processor features exceptional codeefficiency, delivering the high-performance expected from an Arm
usually associated with 8- and 16-bit devices.
The processor supports a set of DSP instructions which allow efficient signal processing and
complex algorithm execution.
Its single precision FPU speeds up software development by using metalanguage
development tools, while avoiding saturation.
With its embedded Arm® core, the STM32L476xx family is compatible with all Arm® tools
and software.
Figure 1 shows the general block diagram of the STM32L476xx family devices.
The ART Accelerator™ is a memory accelerator which is optimized for STM32 industrystandard Arm
the Arm
processor to wait for the Flash memory at higher frequencies.
To release the processor near 100 DMIPS performance at 80MHz, the accelerator
implements an instruction prefetch queue and branch cache, which increases program
execution speed from the 64-bit Flash memory. Based on CoreMark benchmark, the
performance achieved thanks to the ART accelerator is equivalent to 0 wait state program
execution from Flash memory at a CPU frequency up to 80 MHz.
®
®
Cortex®-M4 processors. It balances the inherent performance advantage of
Cortex®-M4 over Flash memory technologies, which normally requires the
3.3 Memory protection unit
The memory protection unit (MPU) is used to manage the CPU accesses to memory to
prevent one task to accidentally corrupt the memory or resources used by any other active
task. This memory area is organized into up to 8 protected areas that can in turn be divided
up into 8 subareas. The protection area sizes are between 32 bytes and the whole 4
gigabytes of addressable memory.
The MPU is especially helpful for applications where some critical or certified code has to be
protected against the misbehavior of other tasks. It is usually managed by an RTOS (realtime operating system). If a program accesses a memory location that is prohibited by the
MPU, the RTOS can detect it and take action. In an RTOS environment, the kernel can
dynamically update the MPU area setting, based on the process to be executed.
The MPU is optional and can be bypassed for applications that do not need it.
18/270DS10198 Rev 8
STM32L476xxFunctional overview
3.4 Embedded Flash memory
STM32L476xx devices feature up to 1 Mbyte of embedded Flash memory available for
storing programs and data. The Flash memory is divided into two banks allowing readwhile-write operations. This feature allows to perform a read operation from one bank while
an erase or program operation is performed to the other bank. The dual bank boot is also
supported. Each bank contains 256 pages of 2
Flexible protections can be configured thanks to option bytes:
•Readout protection (RDP) to protect the whole memory. Three levels are available:
–Level 0: no readout protection
–Level 1: memory readout protection: the Flash memory cannot be read from or
written to if either debug features are connected, boot in RAM or bootloader is
selected
–Level 2: chip readout protection: debug features (Cortex-M4 JTAG and serial
wire), boot in RAM and bootloader selection are disabled (JTAG fuse). This
selection is irreversible.
Table 3. Access status versus readout protection level and execution modes
Kbyte.
Area
Main
memory
System
memory
Option
bytes
Backup
registers
SRAM2
1. Erased when RDP change from Level 1 to Level 0.
Protection
level
1YesYesYesNoNoNo
2YesYesYesN/AN/AN/A
1YesNoNoYesNoNo
2YesNoNoN/AN/AN/A
1YesYesYesYesYesYes
2YesNoNoN/AN/AN/A
1YesYesN/A
2YesYesN/AN/AN/AN/A
1YesYesYes
2YesYesYesN/AN/AN/A
User execution
ReadWriteEraseReadWriteErase
(1)
(1)
Debug, boot from RAM or boot
from system memory (loader)
NoNoN/A
NoNoNo
•Write protection (WRP): the protected area is protected against erasing and
programming. Two areas per bank can be selected, with 2-Kbyte granularity.
•Proprietary code readout protection (PCROP): a part of the flash memory can be
protected against read and write from third parties. The protected area is execute-only:
it can only be reached by the STM32 CPU, as an instruction code, while all other
accesses (DMA, debug and CPU data read, write and erase) are strictly prohibited.
One area per bank can be selected, with 64-bit granularity. An additional option bit
(PCROP_RDP) allows to select if the PCROP area is erased or not when the RDP
protection is changed from Level 1 to Level 0.
(1)
(1)
DS10198 Rev 819/270
60
Functional overviewSTM32L476xx
The whole non-volatile memory embeds the error correction code (ECC) feature supporting:
•single error detection and correction
•double error detection.
•The address of the ECC fail can be read in the ECC register
3.5 Embedded SRAM
STM32L476xx devices feature up to 128 Kbyte of embedded SRAM. This SRAM is split into
two blocks:
•96 Kbyte mapped at address 0x2000 0000 (SRAM1)
•32 Kbyte located at address 0x1000 0000 with hardware parity check (SRAM2).
This block is accessed through the ICode/DCode buses for maximum performance.
These 32 Kbyte SRAM can also be retained in Standby mode.
The SRAM2 can be write-protected with 1 Kbyte granularity.
The memory can be accessed in read/write at CPU clock speed with 0 wait states.
3.6 Firewall
The device embeds a Firewall which protects code sensitive and secure data from any
access performed by a code executed outside of the protected areas.
Each illegal access generates a reset which kills immediately the detected intrusion.
The Firewall main features are the following:
•Three segments can be protected and defined thanks to the Firewall registers:
–Code segment (located in Flash or SRAM1 if defined as executable protected
area)
–Non-volatile data segment (located in Flash)
–Volatile data segment (located in SRAM1)
•The start address and the length of each segments are configurable:
–Code segment: up to 1024 Kbyte with granularity of 256 bytes
–Non-volatile data segment: up to 1024 Kbyte with granularity of 256 bytes
–Volatile data segment: up to 96 Kbyte with a granularity of 64 bytes
•Specific mechanism implemented to open the Firewall to get access to the protected
areas (call gate entry sequence)
•Volatile data segment can be shared or not with the non-protected code
•Volatile data segment can be executed or not depending on the Firewall configuration
The Flash readout protection must be set to level 2 in order to reach the expected level of
protection.
20/270DS10198 Rev 8
STM32L476xxFunctional overview
3.7 Boot modes
At startup, BOOT0 pin and BOOT1 option bit are used to select one of three boot options:
•Boot from user Flash
•Boot from system memory
•Boot from embedded SRAM
The boot loader is located in system memory. It is used to reprogram the Flash memory by
using USART, I2C, SPI, CAN or USB OTG FS in Device mode through DFU (device
firmware upgrade).
3.8 Cyclic redundancy check calculation unit (CRC)
The CRC (cyclic redundancy check) calculation unit is used to get a CRC code using a
configurable generator polynomial value and size.
Among other applications, CRC-based techniques are used to verify data transmission or
storage integrity. In the scope of the EN/IEC 60335-1 standard, they offer a means of
verifying the Flash memory integrity. The CRC calculation unit helps compute a signature of
the software during runtime, to be compared with a reference signature generated at linktime and stored at a given memory location.
3.9 Power supply management
3.9.1 Power supply schemes
•VDD = 1.71 to 3.6 V: external power supply for I/Os (V
the system analog such as reset, power management and internal clocks. It is provided
externally through VDD pins.
•V
•V
•V
•V
•V
•V
Note:When the functions supplied by V
should preferably be shorted to V
= 1.05 to 1.32 V: external power supply bypassing internal regulator when
DD12
connected to an external SMPS. It is provided externally through VDD12 pins and only
available on packages with the external SMPS supply option. VDD12 does not require
any external decoupling capacitance and cannot support any external load.
= 1.62 V (ADCs/COMPs) / 1.8 (DAC/OPAMPs) to 3.6 V: external analog power
DDA
supply for ADCs, DAC, OPAMPs, Comparators and Voltage reference buffer. The V
voltage level is independent from the V
= 3.0 to 3.6 V: external independent power supply for USB transceivers. The
DDUSB
V
voltage level is independent from the VDD voltage.
DDUSB
= 1.08 to 3.6 V: external power supply for 14 I/Os (PG[15:2]). The V
DDIO2
voltage level is independent from the V
= 2.5 to 3.6 V: the LCD controller can be powered either externally through VLCD
LCD
pin, or internally from an internal voltage generated by the embedded step-up
converter.
= 1.55 to 3.6 V: power supply for RTC, external clock 32 kHz oscillator and
BAT
backup registers (through power switch) when V
, V
DDA
.
DD
DD
DD
DDUSB
voltage.
voltage.
or V
DDIO2
), the internal regulator and
DDIO1
is not present.
DD
are not used, these supplies
DDIO2
DDA
DS10198 Rev 821/270
60
Functional overviewSTM32L476xx
MSv45700V1
Low voltage detector
V
DDA
V
DDA
domain
V
SS
V
DD
V
BAT
3 x A/D converters
2 x comparators
2 x D/A converters
2 x operational amplifiers
Voltage reference buffer
Note:If these supplies are tied to ground, the I/Os supplied by these power supplies are not 5 V
tolerant (refer to
Tabl e 20: Voltage characteristics).
Note:V
DDIOx
V
DDIO2
is the I/Os general purpose digital functions supply. V
, with V
DDIO1
= VDD. V
supply voltage level is independent from V
DDIO2
Figure 2. Power supply overview
represents V
DDIOx
DDIO1
DDIO1
or
.
During power-up and power-down phases, the following power sequence requirements
must be respected:
•When VDD is below 1 V, other power supplies (V
•When V
During the power-down phase, VDD can temporarily become lower than other supplies only
if the energy provided to the MCU remains below 1
capacitors to be discharged with different time constants during the power-down transient
phase.
remain below V
, V
+ 300 mV.
DD
is above 1 V, all power supplies are independent.
DD
DDA
mJ; this allows external decoupling
DDUSB
, V
DDIO2
, V
LCD
) must
22/270DS10198 Rev 8
STM32L476xxFunctional overview
MSv47490V1
0.3
1
V
BOR0
3.6
Operating modePower-onPower-downtime
V
V
DDX
(1)
V
DD
Invalid supply areaV
DDX
< V
DD
+ 300 mV
V
DDX
independent from V
DD
Figure 3. Power-up/down sequence
1. V
refers to any power supply among V
DDX
3.9.2 Power supply supervisor
The device has an integrated ultra-low-power brown-out reset (BOR) active in all modes
except Shutdown and ensuring proper operation after power-on and during power down.
The device remains in reset mode when the monitored supply voltage V
specified threshold, without the need for an external reset circuit.
The lowest BOR level is 1.71V at power on, and other higher thresholds can be selected
through option bytes.The device features an embedded programmable voltage detector
(PVD) that monitors the V
interrupt can be generated when V
higher than the VPVD threshold. The interrupt service routine can then generate a warning
message and/or put the MCU into a safe state. The PVD is enabled by software.
In addition, the device embeds a Peripheral Voltage Monitor which compares the
independent supply voltages V
that the peripheral is in its functional supply range.
power supply and compares it to the VPVD threshold. An
DD
DDA
, V
DDA
drops below the VPVD threshold and/or when VDD is
DD
, V
DDUSB
DDUSB
, V
, V
, V
LCD
.
is below a
DD
DDIO2
with a fixed threshold in order to ensure
DDIO2
DS10198 Rev 823/270
60
Functional overviewSTM32L476xx
3.9.3 Voltage regulator
Two embedded linear voltage regulators supply most of the digital circuitries: the main
regulator (MR) and the low-power regulator (LPR).
•The MR is used in the Run and Sleep modes and in the Stop 0 mode.
•The LPR is used in Low-Power Run, Low-Power Sleep, Stop 1 and Stop 2 modes. It is
also used to supply the 32 Kbyte SRAM2 in Standby with SRAM2 retention.
•Both regulators are in power-down in Standby and Shutdown modes: the regulator
output is in high impedance, and the kernel circuitry is powered down thus inducing
zero consumption.
The ultralow-power STM32L476xx supports dynamic voltage scaling to optimize its power
consumption in run mode. The voltage from the Main Regulator that supplies the logic
(V
There are two power consumption ranges:
•Range 1 with the CPU running at up to 80 MHz.
•Range 2 with a maximum CPU frequency of 26 MHz. All peripheral clocks are also
) can be adjusted according to the system’s maximum operating frequency.
CORE
limited to 26 MHz.
The V
can be supplied by the low-power regulator, the main regulator being switched
CORE
off. The system is then in Low-power run mode.
•Low-power run mode with the CPU running at up to 2 MHz. Peripherals with
independent clock can be clocked by HSI16.
When the MR is in use, the STM32L476xx with the external SMPS option allows to force an
external V
When V
DD12
supply on the VDD12 supply pins.
CORE
is forced by an external source and is higher than the output of the internal
LDO, the current is taken from this external supply and the overall power efficiency is
significantly improved if using an external step down DC/DC converter.
3.9.4 Low-power modes
The ultra-low-power STM32L476xx supports seven low-power modes to achieve the best
compromise between low-power consumption, short startup time, available peripherals and
available wakeup sources.
24/270DS10198 Rev 8
STM32L476xxFunctional overview
Table 4. STM32L476xx modes overview
DS10198 Rev 825/270
Mode
Regulator
(1)
CPUFlash SRAMClocksDMA & Peripherals
MR
range 1
SMPS
range 2
High
Run
YesON
MR
range2
SMPS
range 2
Low
LPRunLPRYesON
MR range
1
SMPS
range 2
High
Sleep
NoON
MR
range2
SMPS
range 2
Low
LPSleepLPRNoON
(4)
(4)
(4)
(4)
ONAny
ON
ON
ON
(7)
(7)
except
except
Any
PLL
Any
Any
PLL
(2)
Wakeup sourceConsumption
112µA/MHz
All
40µA/MHz
N/A
100 µA/MHz
All except OTG_FS, RNG
39µA/MHz
All except OTG_FS, RNGN/A136 µA/MHz
37 µA/MHz
All
13 µA/MHz
Any interrupt or
event
35 µA/MHz
All except OTG_FS, RNG
15 µA/MHz
All except OTG_FS, RNG
Any interrupt or
event
40 µA/MHz6 cycles
(3)
(5)
(6)
to Range 1: 4 µs
to Range 2: 64 µs
(5)
(6)
Wakeup time
N/A
6 cycles
6 cycles
26/270DS10198 Rev 8
Table 4. STM32L476xx modes overview (continued)
Functional overviewSTM32L476xx
Mode
Stop 0
Regulator
(1)
Range 1
Range 2
CPUFlash SRAMClocksDMA & Peripherals
(8)
NoOffON
(8)
Stop 1LPRNoOffON
LSE
LSI
LSE
LSI
(2)
BOR, PVD, PVM
RTC, LCD, IWDG
COMPx (x=1,2)
DAC1
OPAMPx (x=1,2)
USARTx (x=1...5)
LPUART1
I2Cx (x=1...3)
(9)
(9)
(10)
LPTIMx (x=1,2)
***
All other peripherals are
frozen.
BOR, PVD, PVM
RTC, LCD, IWDG
COMPx (x=1,2)
DAC1
OPAMPx (x=1,2)
USARTx (x=1...5)
LPUART1
I2Cx (x=1...3)
(9)
(9)
(10)
LPTIMx (x=1,2)
***
All other peripherals are
frozen.
Wakeup sourceConsumption
Reset pin, all I/Os
BOR, PVD, PVM
RTC, LCD, IWDG
COMPx (x=1..2)
USARTx (x=1...5)
LPUART1
I2Cx (x=1...3)
(9)
(9)
108 µA
(10)
LPTIMx (x=1,2)
OTG_FS
SWPMI1
(11)
(12)
Reset pin, all I/Os
BOR, PVD, PVM
RTC, LCD, IWDG
COMPx (x=1..2)
(9)
USARTx (x=1...5)
LPUART1
I2Cx (x=1...3)
(9)
(10)
6.6 µA w/o RTC
6.9 µA w RTC
LPTIMx (x=1,2)
OTG_FS
SWPMI1
(11)
(12)
(3)
0.7 µs in SRAM
4.5 µs in Flash
Wakeup time
4 µs in SRAM
6 µs in Flash
Table 4. STM32L476xx modes overview (continued)
STM32L476xxFunctional overview
DS10198 Rev 827/270
Mode
Regulator
(1)
CPUFlash SRAMClocksDMA & Peripherals
Stop 2LPRNoOffON
LPR
Standby
OFF
ShutdownOFF
Powered
Off
Powered
Off
Off
Off
Powered
Powered
SRAM2
ON
Off
Off
LSE
LSI
LSE
LSI
LSE
(2)
BOR, PVD, PVM
RTC, LCD, IWDG
COMPx (x=1..2)
(10)
I2C3
LPUART1
(9)
LPTIM1
***
All other peripherals are
frozen.
BOR, RTC, IWDG
***
All other peripherals are
powered off.
***
I/O configuration can be
floating, pull-up or pull-down
RTC
***
All other peripherals are
powered off.
***
I/O configuration can be
floating, pull-up or pull-
down
(14)
Wakeup sourceConsumption
Reset pin, all I/Os
BOR, PVD, PVM
RTC, LCD, IWDG
COMPx (x=1..2)
(10)
I2C3
LPUART1
(9)
1.1 µA w/o RTC
1.4 µA w/RTC
LPTIM1
0.35 µA w/o RTC
0.65 µA w/ RTC
Reset pin
5 I/Os (WKUPx)
BOR, RTC, IWDG
(13)
0.12 µA w/o RTC
0.42 µA w/ RTC
Reset pin
5 I/Os (WKUPx)
RTC
0.03 µA w/o RTC
(13)
0.33 µA w/ RTC
(3)
Wakeup time
5 µs in SRAM
7 µs in Flash
14 µs
256 µs
1. LPR means Main regulator is OFF and Low-power regulator is ON.
2. All peripherals can be active or clock gated to save power consumption.
3. Typical current at V
LPRun/LPSleep.
4. The Flash memory can be put in power-down and its clock can be gated off when executing from SRAM.
5. Theoretical value based on V
6. Theoretical value based on V
7. The SRAM1 and SRAM2 clocks can be gated on or off independently.
= 1.8 V, 25°C. Consumptions values provided running from SRAM, Flash memory Off, 80 MHz in Range 1, 26 MHz in Range 2, 2 MHz in
DD
= 3.3 V, DC/DC Efficiency of 85%, V
DD
= 3.3 V, DC/DC Efficiency of 85%, V
DD
CORE
CORE
= 1.10 V
= 1.05 V
28/270DS10198 Rev 8
8. SMPS mode can be used in STOP0 Mode, but no significant power gain can be expected.
9. U(S)ART and LPUART reception is functional in Stop mode, and generates a wakeup interrupt on Start, address match or received frame event.
10. I2C address detection is functional in Stop mode, and generates a wakeup interrupt in case of address match.
11. OTG_FS wakeup by resume from suspend and attach detection protocol event.
12. SWPMI1 wakeup by resume from suspend.
13. The I/Os with wakeup from Standby/Shutdown capability are: PA0, PC13, PE6, PA2, PC5.
14. I/Os can be configured with internal pull-up, pull-down or floating in Shutdown mode but the configuration is lost when exiting the Shutdown mode.
Functional overviewSTM32L476xx
STM32L476xxFunctional overview
By default, the microcontroller is in Run mode after a system or a power Reset. It is up to the
user to select one of the low-power modes described below:
•Sleep mode
In Sleep mode, only the CPU is stopped. All peripherals continue to operate and can
wake up the CPU when an interrupt/event occurs.
•Low-power run mode
This mode is achieved with V
supplied by the low-power regulator to minimize the
CORE
regulator's operating current. The code can be executed from SRAM or from Flash,
and the CPU frequency is limited to 2 MHz. The peripherals with independent clock can
be clocked by HSI16.
•Low-power sleep mode
This mode is entered from the low-power run mode. Only the CPU clock is stopped.
When wakeup is triggered by an event or an interrupt, the system reverts to the lowpower run mode.
•Stop 0, Stop 1 and Stop 2 modes
Stop mode achieves the lowest power consumption while retaining the content of
SRAM and registers. All clocks in the V
domain are stopped, the PLL, the MSI
CORE
RC, the HSI16 RC and the HSE crystal oscillators are disabled. The LSE or LSI is still
running.
The RTC can remain active (Stop mode with RTC, Stop mode without RTC).
Some peripherals with wakeup capability can enable the HSI16 RC during Stop mode
to detect their wakeup condition.
Three Stop modes are available: Stop 0, Stop 1 and Stop 2 modes. In Stop 2 mode,
most of the V
domain is put in a lower leakage mode.
CORE
Stop 1 offers the largest number of active peripherals and wakeup sources, a smaller
wakeup time but a higher consumption than Stop 2. In Stop 0 mode, the main regulator
remains ON, allowing a very fast wakeup time but with much higher consumption.
The system clock when exiting from Stop 0, Stop 1 or Stop 2 modes can be either MSI
up to 48 MHz or HSI16, depending on software configuration.
•Standby mode
The Standby mode is used to achieve the lowest power consumption with BOR. The
internal regulator is switched off so that the V
domain is powered off. The PLL, the
CORE
MSI RC, the HSI16 RC and the HSE crystal oscillators are also switched off.
The RTC can remain active (Standby mode with RTC, Standby mode without RTC).
The brown-out reset (BOR) always remains active in Standby mode.
The state of each I/O during standby mode can be selected by software: I/O with
internal pull-up, internal pull-down or floating.
After entering Standby mode, SRAM1 and register contents are lost except for registers
in the Backup domain and Standby circuitry. Optionally, SRAM2 can be retained in
Standby mode, supplied by the low-power Regulator (Standby with SRAM2 retention
mode).
The device exits Standby mode when an external reset (NRST pin), an IWDG reset,
WKUP pin event (configurable rising or falling edge), or an RTC event occurs (alarm,
periodic wakeup, timestamp, tamper) or a failure is detected on LSE (CSS on LSE).
The system clock after wakeup is MSI up to 8 MHz.
DS10198 Rev 829/270
60
Functional overviewSTM32L476xx
•Shutdown mode
The Shutdown mode allows to achieve the lowest power consumption. The internal
regulator is switched off so that the V
domain is powered off. The PLL, the HSI16,
CORE
the MSI, the LSI and the HSE oscillators are also switched off.
The RTC can remain active (Shutdown mode with RTC, Shutdown mode without RTC).
The BOR is not available in Shutdown mode. No power voltage monitoring is possible
in this mode, therefore the switch to Backup domain is not supported.
SRAM1, SRAM2 and register contents are lost except for registers in the Backup
domain.
The device exits Shutdown mode when an external reset (NRST pin), a WKUP pin
event (configurable rising or falling edge), or an RTC event occurs (alarm, periodic
wakeup, timestamp, tamper).
The system clock after wakeup is MSI at 4 MHz.
30/270DS10198 Rev 8
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