Arm® Cortex®-M0+ 32-bit MCU, up to 512KB Flash, 144KB RAM,
6x USART, timers, ADC, DAC, comm. I/Fs, 1.7-3.6V
Datasheet - production data
Features
• Core: Arm® 32-bit Cortex®-M0+ CPU,
frequency up to 64 MHz
• -40°C to 85°C/105°C/125°C operating
temperature
• Memories
– Up to 512 Kbytes of Flash memory with
protection and securable area, two banks,
read-while-write support
– 144 Kbytes of SRAM (128 Kbytes with HW
parity check)
• CRC calculation unit
• Reset and power management
– Voltage range: 1.7 V to 3.6 V
– Separate I/O supply pin (1.6 V to 3.6 V)
– Power-on/Power-down reset (POR/PDR)
– Programmable Brownout reset (BOR)
– Programmable voltage detector (PVD)
– Low-power modes:
• Up to 94 fast I/Os
– All mappable on external interrupt vectors
– Multiple 5 V-tolerant I/Os
• 12-channel DMA controller with flexible
mapping
• 12-bit, 0.4 µs ADC (up to 16 ext. channels)
– Up to 16-bit with hardware oversampling
– Conversion range: 0 to 3.6V
• Two 12-bit DACs, low-power sample-and-hold
• Three fast low-power analog comparators, with
programmable input and output, rail-to-rail
• 15 timers (two 128 MHz capable): 16-bit for
advanced motor control, one 32-bit and six 16bit general-purpose, two basic 16-bit, two lowpower 16-bit, two watchdogs, SysTick timer
• Calendar RTC with alarm and periodic wakeup
from Stop/Standby/Shutdown
• Communication interfaces
– Three I
2
C-bus interfaces supporting Fastmode Plus (1 Mbit/s) with extra current
sink, two supporting SMBus/PMBus and
wakeup from Stop mode
– Six USARTs with master/slave
synchronous SPI; three supporting
ISO7816 interface, LIN, IrDA capability,
auto baud rate detection and wakeup
feature
– Two low-power UARTs
– Three SPIs (32 Mbit/s) with 4- to 16-bit
programmable bitframe, two multiplexed
2
with I
S interface
– HDMI CEC interface, wakeup on header
• USB 2.0 FS device (crystal-less) and host
controller
• USB Type-C™ Power Delivery controller
• Two FDCAN controllers
• Development support: serial wire debug (SWD)
• 96-bit unique ID
• All packages ECOPACK
ReferencePart number
STM32G0B1xC
STM32G0B1xE
STM32G0B1xB
Table 1. Device summary
STM32G0B1CC, STM32G0B1KC,
STM32G0B1MC, STM32G0B1RC,
STM32G0B1CE, STM32G0B1KE,
STM32G0B1ME, STM32G0B1NE,
STM32G0B1RE, STM32G0B1VE
STM32G0B1CB, STM32G0B1KB,
STM32G0B1MB, STM32G0B1RB,
2 compliant
STM32G0B1VC
STM32G0B1VB
November 2020DS13560 Rev 11/159
This is information on a product in full production.
This document provides information on STM32G0B1xB/C/xE microcontrollers, such as
description, functional overview, pin assignment and definition, electrical characteristics,
packaging, and ordering codes.
Information on memory mapping and control registers is object of reference manual.
Information on Arm
®(a)
Cortex®-M0+ core is available from the www.arm.com website.
a. Arm is a registered trademark of Arm Limited (or its subsidiaries) in the US and/or elsewhere.
10/159DS13560 Rev 1
STM32G0B1xB/C/xEDescription
2 Description
The STM32G0B1xB/C/xE mainstream microcontrollers are based on high-performance
®
Arm
Cortex®-M0+ 32-bit RISC core operating at up to 64 MHz frequency. Offering a high
level of integration, they are suitable for a wide range of applications in consumer, industrial
and appliance domains and ready for the Internet of Things (IoT) solutions.
The devices incorporate a memory protection unit (MPU), high-speed embedded memories
(144 Kbytes of SRAM and up to 512 Kbytes of Flash program memory with read protection,
write protection, proprietary code protection, and securable area), DMA, an extensive range
of system functions, enhanced I/Os, and peripherals. The devices offer standard
communication interfaces (three I
USB, two FD CANs, and six USARTs), one 12-bit ADC (2.5 MSps) with up to 19 channels,
one 12-bit DAC with two channels, three fast comparators, an internal voltage reference
buffer, a low-power RTC, an advanced control PWM timer running at up to double the CPU
frequency, six general-purpose 16-bit timers with one running at up to double the CPU
frequency, a 32-bit general-purpose timer, two basic timers, two low-power 16-bit timers,
two watchdog timers, and a SysTick timer. The devices provide a fully integrated USB TypeC Power Delivery controller.
The devices operate within ambient temperatures from -40 to 125°C and with supply
voltages from 1.7 V to 3.6 V. Optimized dynamic consumption combined with a
comprehensive set of power-saving modes, low-power timers and low-power UART, allows
the design of low-power applications.
2
Cs, three SPIs / two I2S, one HDMI CEC, one full-speed
VBAT direct battery input allows keeping RTC and backup registers powered.
The devices come in packages with 32 to 100 pins.
Peripheral
Flash memory (Kbyte)
SRAM (Kbyte)128 (parity-protected) or 144 (not parity-protected)
Advanced control1 (16-bit) high frequency
General-purpose6 (16-bit) + 1 (16-bit) high frequency + 1 (32-bit)
Basic2 (16-bit)
Timers
Low-power2 (16-bit)
SysTick1
Watchdog2
Table 2. Features and peripheral counts
STM32G0B1_
_KB/
_KC/
_KE
128/256/
512
_KBxxN/
_KCxxN/
_KExxN
128/256
/512
_CB/
_CC/
_CE
128/256
/512
_CBxxN/
_CCxxN/
_CExxN
128/256
/512
_NE
512
_RB/
_RC/
_RE
128/256
/512
_RBxxN/
_RCxxN/
_RExxN
128/256
/512
_MB/
_MC/
_ME
128/256
/512
_VB/
_VC/
_VE
128/256
/512
DS13560 Rev 111/159
35
DescriptionSTM32G0B1xB/C/xE
Table 2. Features and peripheral counts (continued)
Ambient: -40 to 85 °C / -40 to 105 °C / -40 to 125 °C
Junction: -40 to 105 °C / -40 to 125 °C / -40 to 130 °C
Number of pins3248526480100
1. The numbers in brackets denote the count of SPI interfaces configurable as I
2
S interface.
2. One port with only one CC line available (supporting limited number of use cases).
3. Depends on order code. Refer to Section 7: Ordering information for details.
_VB/
_VC/
_VE
12/159DS13560 Rev 1
MSv63193V1
Parity
FDCAN1 & 2
I2C2
SPI1/I2S
LPUART& & 2
UCPD
USART3/4
LPTIMER 1/2
TIMER 16/17
Power domain of analog blocks :
V
BAT
4 channels
BKIN, BKIN2, ETR
System and
peripheral
clocks
MOSI/SD
MISO/MCK
SCK/CK
NSS/WS
SWCLK
SWDIO
16x IN
OSC_IN
OSC_OUT
VBAT
OSC32_IN
OSC32_OUT
RTC_OUT
RTC_REFIN
RTC_TS
MOSI, MISO
SCK, NSS
HSI16
LSI
PLLPCLK
V
DD
IR_OUT
1 channel
BKIN
ETR, IN, OUT
1 channel
4 channels
ETR
4 channels
ETR
CPU
CORTEX-M0+
f
max
= 64 MHz
SWD
NVIC
EXTI
SPI/I2S 1 & 2
SPI3
AHB-to-APB
RCC
Reset & clock control
I/F
XTAL OSC
4-48 MHz
IWDG
I/F
ADC
RTC, TAMP
Backup regs
I/F
RC 16 MHz
RC 32 kHz
PLL
decoder
XTAL32 kHz
Bus matrix
I/F
V
DD
2 channels
BKIN
RX, TX
CTS, RTS
CEC
TIM6
TIM7
COMP1
COMP2
IN+, IN-,
OUT
V
DDA
SUPPLY
SUPERVISION
POWER
V
CORE
POR
Reset
Int
VDD/VDDA
VSS/VSSA
NRST
PVD
POR/BOR
Voltage
regulator
USART1 to 6
LPTIM1 & 2
TIM16 & 17
TIM15
TIM14
TIM3 & 4
TIM2 (32-bit)
TIM1
GPIOs
IOPORT
HSE
PLLQCLK
PLLRCLK
LSE
LSE
T sensor
RX, TX,
CTS, RTS
LPUART1 & 2
TAMP_IN
APB
APB
AHB
CC, DBCC
FRSTX
UCPD1 & 2
HDMI-CEC
VREFBUF
DAC
I/F
DAC_OUT1
DAC_OUT2
CRC
VREF+
SCL, SDA
SCL, SDA
SMBA, SMBUS
I2C1 & 2
I2C3
DBGMCU
WWDG
PWRCTRL
SYSCFG
DMA
DMAMUX
V
DDA
V
DDIO1
Low-voltage
detector
V
DD
Flash memory
up to 512 KB
V
DDIO1
/V
DDIO2
IRTIM
from peripherals
PFx
Port F
Port D
PDx
PCx
Port C
PBx
Port B
PAx
Port A
Port E
PEx
NOE, DM,
DP
USB FS
RX, TX
FDCAN1 & 2
VDDIO2
V
DDIO2
COMP3
SRAM
144 KB
STM32G0B1xB/C/xEDescription
Figure 1. Block diagram
DS13560 Rev 113/159
35
Functional overviewSTM32G0B1xB/C/xE
3 Functional overview
3.1 Arm® Cortex®-M0+ core with MPU
The Cortex-M0+ is an entry-level 32-bit Arm Cortex processor designed for a broad range of
embedded applications. It offers significant benefits to developers, including:
•upward compatibility with Cortex-M processor family
•platform security robustness, with integrated Memory Protection Unit (MPU).
The Cortex-M0+ processor is built on a highly area- and power-optimized 32-bit core, with a
2-stage pipeline Von Neumann architecture. The processor delivers exceptional energy
efficiency through a small but powerful instruction set and extensively optimized design,
providing high-end processing hardware including a single-cycle multiplier.
The Cortex-M0+ processor provides the exceptional performance expected of a modern
32-bit architecture, with a higher code density than other 8-bit and 16-bit microcontrollers.
Owing to embedded Arm core, the STM32G0B1xB/C/xE devices are compatible with Arm
tools and software.
The Cortex-M0+ is tightly coupled with a nested vectored interrupt controller (NVIC)
described in Section 3.13.1.
3.2 Memory protection unit
The memory protection unit (MPU) is used to manage the CPU accesses to memory to
prevent one task to accidentally corrupt the memory or resources used by any other active
task.
The MPU is especially helpful for applications where some critical or certified code has to be
protected against the misbehavior of other tasks. It is usually managed by an RTOS (realtime operating system). If a program accesses a memory location that is prohibited by the
MPU, the RTOS can detect it and take action. In an RTOS environment, the kernel can
dynamically update the MPU area setting, based on the process to be executed.
The MPU is optional and can be bypassed for applications that do not need it.
3.3 Embedded Flash memory
STM32G0B1xB/C/xE devices feature up to 512 Kbytes of embedded Flash memory
available for storing code and data.
14/159DS13560 Rev 1
STM32G0B1xB/C/xEFunctional overview
Flexible protections can be configured thanks to option bytes:
•Readout protection (RDP) to protect the whole memory. Three levels are available:
–Level 0: no readout protection
–Level 1: memory readout protection: the Flash memory cannot be read from or
written to if either debug features are connected, boot in RAM or bootloader is
selected
–Level 2: chip readout protection: debug features (Cortex-M0+ serial wire), boot in
RAM and bootloader selection are disabled. This selection is irreversible.
Table 3. Access status versus readout protection level and execution modes
Area
User
memory
System
memory
Option
bytes
Backup
registers
1. Erased upon RDP change from Level 1 to Level 0.
Protection
level
1YesYesYesNoNoNo
2YesYesYesN/AN/AN/A
1YesNoNoYesNoNo
2YesNoNoN/AN/AN/A
1YesYesYesYesYesYes
2YesNoNoN/AN/AN/A
1YesYesN/A
2YesYesN/AN/AN/AN/A
User execution
ReadWriteEraseReadWriteErase
(1)
Debug, boot from RAM or boot
from system memory (loader)
NoNoN/A
•Write protection (WRP): the protected area is protected against erasing and
programming. Two areas per bank can be selected, with 2-Kbyte granularity.
•Proprietary code readout protection (PCROP): a part of the Flash memory can be
protected against read and write from third parties. The protected area is execute-only:
it can only be reached by the STM32 CPU as instruction code, while all other accesses
(DMA, debug and CPU data read, write and erase) are strictly prohibited. An additional
option bit (PCROP_RDP) determines whether the PCROP area is erased or not when
the RDP protection is changed from Level 1 to Level 0.
(1)
The whole non-volatile memory embeds the error correction code (ECC) feature supporting:
•single error detection and correction
•double error detection
•readout of the ECC fail address from the ECC register
3.3.1 Securable area
A part of the Flash memory can be hidden from the application once the code it contains is
executed. As soon as the write-once SEC_PROT bit is set, the securable memory cannot be
accessed until the system resets. The securable area generally contains the secure boot
code to execute only once at boot. This helps to isolate secret code from untrusted
application code.
DS13560 Rev 115/159
35
Functional overviewSTM32G0B1xB/C/xE
3.4 Embedded SRAM
STM32G0B1xB/C/xE devices have 128 Kbytes of embedded SRAM with parity. Hardware
parity check allows memory data errors to be detected, which contributes to increasing
functional safety of applications.
When the parity protection is not required because the application is not safety-critical, the
parity memory bits can be used as additional SRAM, to increase its total size to 144 Kbytes.
The memory can be read/write-accessed at CPU clock speed, with 0 wait states.
3.5 Boot modes
At startup, the boot pin and boot selector option bit are used to select one of the three boot
options:
•boot from User Flash memory
•boot from System memory
•boot from embedded SRAM
The boot pin is shared with a standard GPIO and can be enabled through the boot selector
option bit. The boot loader is located in System memory. It manages the Flash memory
reprogramming through one of the following interfaces:
•USART on pins PA9/PA10, PC10/PC11, or PA2/PA3
2
•I
C-bus on pins PB6/PB7 or PB10/PB11
•SPI on pins PA4/PA5/PA6/PA7 or PB12/PB13/PB14/PB15
•USB on pins PA11/PA12
•FDCAN on pins PD0/PD1
3.6 Cyclic redundancy check calculation unit (CRC)
The CRC (cyclic redundancy check) calculation unit is used to get a CRC code using a
configurable generator polynomial value and size.
Among other applications, CRC-based techniques are used to verify data transmission or
storage integrity. In the scope of the EN/IEC 60335-1 standard, they offer a means of
verifying the Flash memory integrity. The CRC calculation unit helps compute a signature of
the software during runtime, to be compared with a reference signature generated at link
time and stored at a given memory location.
16/159DS13560 Rev 1
STM32G0B1xB/C/xEFunctional overview
3.7 Power supply management
3.7.1 Power supply schemes
The STM32G0B1xB/C/xE devices require a 1.7 V to 3.6 V operating supply voltage (VDD).
Several different power supplies are provided to specific peripherals:
•V
•V
•V
•V
•V
•V
•V
= 1.7 (1.6) to 3.6 V
DD
V
is the external power supply for the internal regulator and the system analog such
DD
as reset, power management and internal clocks. It is provided externally through
VDD/VDDA pin.
The minimum voltage of 1.7 V corresponds to power-on reset release threshold
V
(max). Once this threshold is crossed and power-on reset is released, the
POR
functionality is guaranteed down to power-down reset threshold V
= 1.62 V (ADC and COMP) / 1.8 V (DAC) / 2.4 V (VREFBUF) to 3.6 V
DDA
V
is the analog power supply for the A/D converter, D/A converter, voltage
DDA
reference buffer and comparators. V
voltage level is identical to VDD voltage as it is
DDA
PDR
(min).
provided externally through VDD/VDDA pin.
= V
DDIO1
V
DDIO1
DD
is the power supply for the I/Os. V
voltage level is identical to VDD voltage
DDIO1
as it is provided externally through VDD/VDDA pin.
= 1.6 to 3.6 V
DDIO2
V
independent of V
TAMP, low-speed external 32.768 kHz oscillator and backup registers when V
present. V
is the power supply from VDDIO2 pin for selected I/Os. Although V
DDIO2
= 1.55 V to 3.6 V. V
BAT
BAT
DD
or V
, it must not be applied without valid VDD.
DDA
is the power supply (through a power switch) for RTC,
BAT
is provided externally through VBAT pin. When this pin is not available
DDIO2
DD
is
is not
on the package, VBAT bonding pad is internally bonded to the VDD/VDDA pin.
is the analog peripheral input reference voltage, or the output of the internal
REF+
voltage reference buffer (when enabled). When V
V
. When V
DDA
when the analog peripherals using V
DDA
2 V, V
must be between 2 V and V
REF+
are not active.
REF+
DDA
< 2 V, V
must be equal to
REF+
. It can be grounded
DDA
The internal voltage reference buffer supports two output voltages, which is configured
with VRS bit of the VREFBUF_CSR register:
–V
–V
V
REF+
internally connected with V
around 2.048 V (requiring V
REF+
around 2.5 V (requiring V
REF+
equal to or higher than 2.4 V)
DDA
equal to or higher than 2.8 V)
DDA
is delivered through VREF+ pin. On packages without VREF+ pin, V
, and the internal voltage reference buffer must be kept
DD
REF+
is
disabled (refer to datasheets for package pinout description).
CORE
An embedded linear voltage regulator is used to supply the V
power. V
The Flash memory is also supplied with V
is the power supply for digital peripherals, SRAM and Flash memory.
CORE
DD
.
internal digital
CORE
DS13560 Rev 117/159
35
Functional overviewSTM32G0B1xB/C/xE
MSv63104V1
V
DDA
domain
RTC domain
D/A converter
A/D converter
Standby circuitry
(Wakeup, IWDG)
Voltage
regulator
Core
SRAM
Digital
peripherals
Low-voltage
detector
LSE crystal 32.768 kHz osc
BKP registers
RCC BDCR register
RTC and TAMP
Comparators
Voltage reference buffer
I/O ring
V
CORE
domain
Temp. sensor
Reset block
PLL, HSI
Flash memory
V
DDIO1
VREF+
V
DD
domain
V
CORE
VSS/VSSA
VDD/VDDA
VBAT
V
DDA
V
REF+
V
SSA
V
SS
V
DD
V
DDIO1
domain
I/O ring
V
DDIO2
domain
VDDIO2
V
DDIO2
Figure 2. Power supply overview
3.7.2 Power supply supervisor
The device has an integrated power-on/power-down (POR/PDR) reset active in all power
modes except Shutdown and ensuring proper operation upon power-on and power-down. It
maintains the device in reset when the supply voltage is below V
the need for an external reset circuit. Brownout reset (BOR) function allows extra flexibility. It
can be enabled and configured through option bytes, by selecting one of four thresholds for
rising V
The device also features an embedded programmable voltage detector (PVD) that monitors
the V
when V
falling and rising. The interrupt service routine can then generate a warning message and/or
put the MCU into a safe state. The PVD is enabled by software.
3.7.3 Voltage regulator
Two embedded linear voltage regulators, main regulator (MR) and low-power regulator
(LPR), supply most of digital circuitry in the device.
18/159DS13560 Rev 1
The MR is used in Run and Sleep modes. The LPR is used in Low-power run, Low-power
sleep and Stop modes.
In Standby and Shutdown modes, both regulators are powered down and their outputs set in
high-impedance state, such as to bring their current consumption close to zero. However,
SRAM data retention is possible in Standby mode, in which case the LPR remains active
and it only supplies the SRAM.
and other four for falling VDD.
DD
power supply and compares it to V
DD
level crosses the V
DD
PVD
threshold, selectively while falling, while rising, or while
PVD
POR/PDR
threshold, without
threshold. It allows generating an interrupt
STM32G0B1xB/C/xEFunctional overview
3.7.4 Low-power modes
By default, the microcontroller is in Run mode after system or power reset. It is up to the
user to select one of the low-power modes described below:
•Sleep mode
In Sleep mode, only the CPU is stopped. All peripherals continue to operate and can
wake up the CPU when an interrupt/event occurs.
•Low-power run mode
This mode is achieved with V
regulator's operating current. The code can be executed from SRAM or from Flash,
and the CPU frequency is limited to 2 MHz. The peripherals with independent clock can
be clocked by HSI16.
•Low-power sleep mode
This mode is entered from the low-power run mode. Only the CPU clock is stopped.
When wakeup is triggered by an event or an interrupt, the system reverts to the Lowpower run mode.
•Stop 0 and Stop 1 modes
In Stop 0 and Stop 1 modes, the device achieves the lowest power consumption while
retaining the SRAM and register contents. All clocks in the V
The PLL, as well as the HSI16 RC oscillator and the HSE crystal oscillator are
disabled. The LSE or LSI keep running. The RTC can remain active (Stop mode with
RTC, Stop mode without RTC).
Some peripherals with wakeup capability can enable the HSI16 RC during Stop mode,
so as to get clock for processing the wakeup event. The main regulator remains active
in Stop 0 mode while it is turned off in Stop 1 mode.
•Standby mode
The Standby mode is used to achieve the lowest power consumption, with POR/PDR
always active in this mode. The main regulator is switched off to power down V
domain. The low-power regulator is either switched off or kept active. In the latter case,
it only supplies SRAM to ensure data retention. The PLL, as well as the HSI16 RC
oscillator and the HSE crystal oscillator are also powered down. The RTC can remain
active (Standby mode with RTC, Standby mode without RTC).
For each I/O, the software can determine whether a pull-up, a pull-down or no resistor
shall be applied to that I/O during Standby mode.
Upon entering Standby mode, register contents are lost except for registers in the RTC
domain and standby circuitry. The SRAM contents can be retained through register
setting.
The device exits Standby mode upon external reset event (NRST pin), IWDG reset
event, wakeup event (WKUP pin, configurable rising or falling edge) or RTC event
(alarm, periodic wakeup, timestamp, tamper), or when a failure is detected on LSE
(CSS on LSE).
•Shutdown mode
The Shutdown mode allows to achieve the lowest power consumption. The internal
regulator is switched off to power down the V
supplied by the low-power regulator to minimize the
CORE
domain are stopped.
CORE
domain. The PLL, as well as the
CORE
CORE
DS13560 Rev 119/159
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Functional overviewSTM32G0B1xB/C/xE
HSI16 and LSI RC-oscillators and HSE crystal oscillator are also powered down. The
RTC can remain active (Shutdown mode with RTC, Shutdown mode without RTC).
The BOR is not available in Shutdown mode. No power voltage monitoring is possible
in this mode. Therefore, switching to RTC domain is not supported.
SRAM and register contents are lost except for registers in the RTC domain.
The device exits Shutdown mode upon external reset event (NRST pin), IWDG reset
event, wakeup event (WKUP pin, configurable rising or falling edge) or RTC event
(alarm, periodic wakeup, timestamp, tamper).
3.7.5 Reset mode
During and upon exiting reset, the schmitt triggers of I/Os are disabled so as to reduce
power consumption. In addition, when the reset source is internal, the built-in pull-up
resistor on NRST pin is deactivated.
3.7.6 VBAT operation
The V
power domain, consuming very little energy, includes RTC, and LSE oscillator and
BAT
backup registers.
In VBAT mode, the RTC domain is supplied from VBAT pin. The power source can be, for
example, an external battery or an external supercapacitor. Two anti-tamper detection pins
are available.
The RTC domain can also be supplied from VDD/VDDA pin.
By means of a built-in switch, an internal voltage supervisor allows automatic switching of
RTC domain powering between V
voltage of the RTC domain (V
BAT
and voltage from VBAT pin to ensure that the supply
DD
) remains within valid operating conditions. If both voltages
are valid, the RTC domain is supplied from VDD/VDDA pin.
An internal circuit for charging the battery on VBAT pin can be activated if the V
voltage is
DD
within a valid range.
Note:External interrupts and RTC alarm/events cannot cause the microcontroller to exit the VBAT
mode, as in that mode the V
is not within a valid range.
DD
3.8 Interconnect of peripherals
Several peripherals have direct connections between them. This allows autonomous
communication between peripherals, saving CPU resources thus power supply
consumption. In addition, these hardware connections allow fast and predictable latency.
Depending on peripherals, these interconnections can operate in Run, Sleep and Stop
modes.
20/159DS13560 Rev 1
STM32G0B1xB/C/xEFunctional overview
Interconnect source
TIMx
COMPx
ADCxTIM1Timer triggered by analog watchdog YY-
RTC
All clock sources (internal and
external)
Table 4. Interconnect of peripherals
Interconnect
destination
TIMxTimer synchronization or chainingYY-
ADCx
DACx
Conversion triggersYY-
DMAMemory-to-memory transfer triggerYY-
COMPxComparator output blankingYY-
TIM1,2,3,4
LPTIMERx
Timer input channel, trigger, break
from analog signals comparison
Low-power timer triggered by analog
signals comparison
TIM16Timer input channel from RTC eventsYY-
LPTIMERx
TIM14,16,17
Low-power timer triggered by RTC
alarms or tampers
Clock source used as input channel for
RC measurement and trimming
Interconnect action
Run
Sleep
Low-power run
YY -
YYY
YYY
YY -
Stop
Low-power sleep
CSS
RAM (parity error)
Flash memory (ECC error)
TIM1,15,16,17Timer breakYY-
COMPx
PVD
CPU (hard fault)TIM1,15,16,17Timer breakY--
TIMxExternal triggerYY-
GPIO
LPTIMERxExternal triggerYYY
ADC
DACx
Conversion external triggerYY-
DS13560 Rev 121/159
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Functional overviewSTM32G0B1xB/C/xE
3.9 Clocks and startup
The clock controller distributes the clocks coming from different oscillators to the core and
the peripherals. It also manages clock gating for low-power modes and ensures clock
robustness. It features:
•Clock prescaler: to get the best trade-off between speed and current consumption,
the clock frequency to the CPU and peripherals can be adjusted by a programmable
prescaler
•Safe clock switching: clock sources can be changed safely on the fly in run mode
through a configuration register.
•Clock management: to reduce power consumption, the clock controller can stop the
clock to the core, individual peripherals or memory.
•System clock source: three different sources can deliver SYSCLK system clock:
–4-48 MHz high-speed oscillator with external crystal or ceramic resonator (HSE). It
can supply clock to system PLL. The HSE can also be configured in bypass mode
for an external clock.
–16 MHz high-speed internal RC oscillator (HSI16), trimmable by software. It can
supply clock to system PLL.
–System PLL with maximum output frequency of 64 MHz. It can be fed with HSE or
HSI16 clocks.
•Auxiliary clock source: two ultra-low-power clock sources for the real-time clock
(RTC):
–32.768 kHz low-speed oscillator with external crystal (LSE), supporting four drive
capability modes. The LSE can also be configured in bypass mode for using an
external clock.
–32 kHz low-speed internal RC oscillator (LSI) with ±5% accuracy, also used to
USB FS) have their own clock independent of the system clock.
•Clock security system (CSS): in the event of HSE clock failure, the system clock is
automatically switched to HSI16 and, if enabled, a software interrupt is generated. LSE
clock failure can also be detected and generate an interrupt. The CCS feature can be
enabled by software.
•Clock output:
–MCO (microcontroller clock output) provides one of the internal clocks for
external use by the application
–LSCO (low speed clock output) provides LSI or LSE in all low-power modes
(except in VBAT operation).
Several prescalers allow the application to configure AHB and APB domain clock
frequencies, 64 MHz at maximum.
3.10 General-purpose inputs/outputs (GPIOs)
Each of the GPIO pins can be configured by software as output (push-pull or open-drain), as
input (with or without pull-up or pull-down) or as peripheral alternate function (AF). Most of
the GPIO pins are shared with special digital or analog functions.
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Through a specific sequence, this special function configuration of I/Os can be locked, such
as to avoid spurious writing to I/O control registers.
3.11 Direct memory access controller (DMA)
The direct memory access (DMA) controller is a bus master and system peripheral with
single-AHB architecture.
With 12 channels, it performs data transfers between memory-mapped peripherals and/or
memories, to offload the CPU.
Each channel is dedicated to managing memory access requests from one or more
peripherals. The unit includes an arbiter for handling the priority between DMA requests.
Main features of the DMA controller:
•Single-AHB master
•Peripheral-to-memory, memory-to-peripheral, memory-to-memory and peripheral-to-
peripheral data transfers
•Access, as source and destination, to on-chip memory-mapped devices such as Flash
memory, SRAM, and AHB and APB peripherals
•All DMA channels independently configurable:
–Each channel is associated either with a DMA request signal coming from a
peripheral, or with a software trigger in memory-to-memory transfers. This
configuration is done by software.
–Priority between the requests is programmable by software (four levels per
channel: very high, high, medium, low) and by hardware in case of equality (such
as request to channel 1 has priority over request to channel 2).
–Transfer size of source and destination are independent (byte, half-word, word),
emulating packing and unpacking. Source and destination addresses must be
aligned on the data size.
–Support of transfers from/to peripherals to/from memory with circular buffer
management
–Programmable number of data to be transferred: 0 to 2
•Generation of an interrupt request per channel. Each interrupt request originates from
any of the three DMA events: transfer complete, half transfer, or transfer error.
16
- 1
3.12 DMA request multiplexer (DMAMUX)
The DMAMUX request multiplexer enables routing a DMA request line between the
peripherals and the DMA controller. Each channel selects a unique DMA request line,
unconditionally or synchronously with events from its DMAMUX synchronization inputs.
DMAMUX may also be used as a DMA request generator from programmable events on its
input trigger signals.
3.13 Interrupts and events
The device flexibly manages events causing interrupts of linear program execution, called
exceptions. The Cortex-M0+ processor core, a nested vectored interrupt controller (NVIC)
DS13560 Rev 123/159
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Functional overviewSTM32G0B1xB/C/xE
and an extended interrupt/event controller (EXTI) are the assets contributing to handling the
exceptions. Exceptions include core-internal events such as, for example, a division by zero
and, core-external events such as logical level changes on physical lines. Exceptions result
in interrupting the program flow, executing an interrupt service routine (ISR) then resuming
the original program flow.
The processor context (contents of program pointer and status registers) is stacked upon
program interrupt and unstacked upon program resume, by hardware. This avoids context
stacking and unstacking in the interrupt service routines (ISRs) by software, thus saving
time, code and power. The ability to abandon and restart load-multiple and store-multiple
operations significantly increases the device’s responsiveness in processing exceptions.
The configurable nested vectored interrupt controller is tightly coupled with the core. It
handles physical line events associated with a non-maskable interrupt (NMI) and maskable
interrupts, and Cortex-M0+ exceptions. It provides flexible priority management.
The tight coupling of the processor core with NVIC significantly reduces the latency between
interrupt events and start of corresponding interrupt service routines (ISRs). The ISR
vectors are listed in a vector table, stored in the NVIC at a base address. The vector
address of an ISR to execute is hardware-built from the vector table base address and the
ISR order number used as offset.
If a higher-priority interrupt event happens while a lower-priority interrupt event occurring
just before is waiting for being served, the later-arriving higher-priority interrupt event is
served first. Another optimization is called tail-chaining. Upon a return from a higher-priority
ISR then start of a pending lower-priority ISR, the unnecessary processor context
unstacking and stacking is skipped. This reduces latency and contributes to power
efficiency.
Features of the NVIC:
•Low-latency interrupt processing
•4 priority levels
•Handling of a non-maskable interrupt (NMI)
•Handling of 32 maskable interrupt lines
•Handling of 10 Cortex-M0+ exceptions
•Later-arriving higher-priority interrupt processed first
•Tail-chaining
•Interrupt vector retrieval by hardware
3.13.2 Extended interrupt/event controller (EXTI)
The extended interrupt/event controller adds flexibility in handling physical line events and
allows identifying wake-up events at processor wakeup from Stop mode.
The EXTI controller has a number of channels, of which some with rising, falling or rising,
and falling edge detector capability. Any GPIO and a few peripheral signals can be
connected to these channels.
The channels can be independently masked.
The EXTI controller can capture pulses shorter than the internal clock period.
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A register in the EXTI controller latches every event even in Stop mode, which allows the
software to identify the origin of the processor's wake-up from Stop mode or, to identify the
GPIO and the edge event having caused an interrupt.
3.14 Analog-to-digital converter (ADC)
A native 12-bit analog-to-digital converter is embedded into STM32G0B1xB/C/xE devices. It
can be extended to 16-bit resolution through hardware oversampling. The ADC has up to 16
external channels and 3 internal channels (temperature sensor, voltage reference, V
monitoring). It performs conversions in single-shot or scan mode. In scan mode, automatic
conversion is performed on a selected group of analog inputs.
The ADC frequency is independent from the CPU frequency, allowing maximum sampling
rate of ~2 MSps even with a low CPU speed. An auto-shutdown function guarantees that
the ADC is powered off except during the active conversion phase.
BAT
The ADC can be served by the DMA controller. It can operate in the whole V
range.
The ADC features a hardware oversampler up to 256 samples, improving the resolution to
16 bits (refer to AN2668).
An analog watchdog feature allows very precise monitoring of the converted voltage of one,
some or all scanned channels. An interrupt is generated when the converted voltage is
outside the programmed thresholds.
The events generated by the general-purpose timers (TIMx) can be internally connected to
the ADC start triggers, to allow the application to synchronize A/D conversions with timers.
3.14.1 Temperature sensor
The temperature sensor (TS) generates a voltage VTS that varies linearly with temperature.
The temperature sensor is internally connected to an ADC input to convert the sensor
output voltage into a digital value.
The sensor provides good linearity but it has to be calibrated to obtain good overall
accuracy of the temperature measurement. As the offset of the temperature sensor may
vary from part to part due to process variation, the uncalibrated internal temperature sensor
is suitable only for relative temperature measurements.
To improve the accuracy of the temperature sensor, each part is individually factorycalibrated by ST. The resulting calibration data are stored in the part’s engineering bytes,
accessible in read-only mode.
Table 5. Temperature sensor calibration values
supply
DD
Calibration value nameDescriptionMemory address
TS ADC raw data acquired at a
TS_CAL1
TS_CAL2
temperature of 30 °C (± 5 °C),
V
= V
DDA
TS ADC raw data acquired at a
temperature of 130 °C (± 5 °C),
V
= V
DDA
DS13560 Rev 125/159
= 3.0 V (± 10 mV)
REF+
= 3.0 V (± 10 mV)
REF+
0x1FFF 75A8 - 0x1FFF 75A9
0x1FFF 75CA - 0x1FFF 75CB
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Functional overviewSTM32G0B1xB/C/xE
3.14.2 Internal voltage reference (V
The internal voltage reference (V
ADC and comparators. V
REFINT
REFINT
is internally connected to an ADC input. The V
REFINT
)
) provides a stable (bandgap) voltage output for the
voltage is individually precisely measured for each part by ST during production test and
stored in the part’s engineering bytes. It is accessible in read-only mode.
3.14.3 V
Calibration value nameDescriptionMemory address
battery voltage monitoring
BAT
Table 6. Internal voltage reference calibration values
Raw data acquired at a
V
REFINT
temperature of 30 °C (± 5 °C),
V
DDA
= V
= 3.0 V (± 10 mV)
REF+
This embedded hardware feature allows the application to measure the V
using an internal ADC input. As the V
voltage may be higher than V
BAT
the ADC input range, the VBAT pin is internally connected to a bridge divider by three. As a
consequence, the converted digital value is one third the V
3.15 Digital-to-analog converter (DAC)
REFINT
0x1FFF 75AA - 0x1FFF 75AB
battery voltage
BAT
and thus outside
DDA
voltage.
BAT
The 2-channel 12-bit buffered DAC converts a digital value into an analog voltage available
on the channel output. The architecture of either channel is based on integrated resistor
string and an inverting amplifier. The digital circuitry is common for both channels.
Features of the DAC:
•Two DAC output channels
•8-bit or 12-bit output mode
•Buffer offset calibration (factory and user trimming)
•Left or right data alignment in 12-bit mode
•Synchronized update capability
•Noise-wave generation
•Triangular-wave generation
•Independent or simultaneous conversion for DAC channels
•DMA capability for either DAC channel
•Triggering with timer events, synchronized with DMA
•Triggering with external events
•Sample-and-hold low-power mode, with internal or external capacitor
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3.16 Voltage reference buffer (VREFBUF)
When enabled, an embedded buffer provides the internal reference voltage to analog
blocks (for example ADC) and to VREF+ pin for external components.
The internal voltage reference buffer supports two voltages:
•2.048 V
•2.5 V
An external voltage reference can be provided through the VREF+ pin when the internal
voltage reference buffer is disabled.
On some packages, the VREF+ pad of the silicon die is double-bonded with supply pad to
common VDD/VDDA pin and so the internal voltage reference buffer cannot be used.
3.17 Comparators (COMP)
Three embedded rail-to-rail analog comparators have programmable reference voltage
(internal or external), hysteresis, speed (low for low-power) and output polarity.
The reference voltage can be one of the following:
•external, from an I/O
•internal, from DAC
•internal reference voltage (V
The comparators can wake up the device from Stop mode, generate interrupts, breaks or
triggers for the timers and can be also combined into a window comparator.
) or its submultiple (1/4, 1/2, 3/4)
REFINT
3.18 Timers and watchdogs
The device includes an advanced-control timer, seven general-purpose timers, two basic
timers, two low-power timers, two watchdog timers and a SysTick timer. Table 7 compares
features of the advanced-control, general-purpose and basic timers.
Timer typeTimer
Advanced-
control
TIM116-bit
Counter
resolution
Table 7. Timer feature comparison
Counter
type
Up, down,
up/down
Maximum
operating
frequency
128 MHz
Prescaler
factor
Integer from
1 to 2
16
DMA
request
generation
Yes43
Capture/
compare
channels
Complementary
outputs
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Functional overviewSTM32G0B1xB/C/xE
Table 7. Timer feature comparison (continued)
Maximum
operating
frequency
64 MHz
64 MHz
64 MHz
Timer typeTimer
TIM232-bit
TIM316-bit
General-
purpose
Basic
Low-power
TIM416-bit
TIM1416-bitUp64 MHz
TIM1516-bitUp128 MHz
TIM16
TIM17
TIM6
TIM7
LPTIM1
LPTIM2
Counter
resolution
16-bitUp64 MHz
16-bitUp64 MHz
16-bitUp64 MHz
Counter
type
Up, down,
up/down
Up, down,
up/down
Up, down,
up/down
3.18.1 Advanced-control timer (TIM1)
Prescaler
factor
Integer from
Integer from
Integer from
Integer from
Integer from
Integer from
Integer from
16
1 to 2
16
1 to 2
16
1 to 2
16
1 to 2
16
1 to 2
16
1 to 2
16
1 to 2
2n where
n=0 to 7
DMA
request
generation
Yes4-
Yes4-
Yes4-
No1-
Yes21
Yes11
Yes--
NoN/A-
Capture/
compare
channels
Complementary
outputs
The advanced-control timer can be seen as a three-phase PWM unit multiplexed on 6
channels. It has complementary PWM outputs with programmable inserted dead-times. It
can also be seen as a complete general-purpose timer. The four independent channels can
be used for:
•input capture
•output compare
•PWM output (edge or center-aligned modes) with full modulation capability (0-100%)
•one-pulse mode output
In debug mode, the advanced-control timer counter can be frozen and the PWM outputs
disabled, so as to turn off any power switches driven by these outputs.
Many features are shared with those of the general-purpose TIMx timers (described in
Section 3.18.2) using the same architecture, so the advanced-control timers can work
together with the TIMx timers via the Timer Link feature for synchronization or event
chaining.
There are seven synchronizable general-purpose timers embedded in the device (refer to
Tab l e 7 for comparison). Each general-purpose timer can be used to generate PWM outputs
or act as a simple timebase.
•TIM2, TIM3, and TIM4
These are full-featured general-purpose timers:
–TIM2 with 32-bit auto-reload up/downcounter and 16-bit prescaler
–TIM3 and TIM4 with 16-bit auto-reload up/downcounter and 16-bit prescaler
They have four independent channels for input capture/output compare, PWM or onepulse mode output. They can operate in combination with other general-purpose timers
via the Timer Link feature for synchronization or event chaining. They can generate
independent DMA request and support quadrature encoders. Their counter can be
frozen in debug mode.
•TIM14
This timer is based on a 16-bit auto-reload upcounter and a 16-bit prescaler. It has one
channel for input capture/output compare, PWM output or one-pulse mode output. Its
counter can be frozen in debug mode.
•TIM15, TIM16, TIM17
These are general-purpose timers featuring:
–16-bit auto-reload upcounter and 16-bit prescaler
–2 channels and 1 complementary channel for TIM15
–1 channel and 1 complementary channel for TIM16 and TIM17
All channels can be used for input capture/output compare, PWM or one-pulse mode
output. The timers can operate together via the Timer Link feature for synchronization
or event chaining. They can generate independent DMA request. Their counters can
be frozen in debug mode.
3.18.3 Basic timers (TIM6 and TIM7)
These timers are mainly used for triggering DAC conversions. They can also be used as
generic 16-bit timebases.
3.18.4 Low-power timers (LPTIM1 and LPTIM2)
These timers have an independent clock. When fed with LSE, LSI or external clock, they
keep running in Stop mode and they can wake up the system from it.
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Functional overviewSTM32G0B1xB/C/xE
Features of LPTIM1 and LPTIM2:
•16-bit up counter with 16-bit autoreload register
•16-bit compare register
•Configurable output (pulse, PWM)
•Continuous/one-shot mode
•Selectable software/hardware input trigger
•Selectable clock source:
–Internal: LSE, LSI, HSI16 or APB clocks
–External: over LPTIM input (working even with no internal clock source running,
used by pulse counter application)
•Programmable digital glitch filter
•Encoder mode
3.18.5 Independent watchdog (IWDG)
The independent watchdog is based on an 8-bit prescaler and 12-bit downcounter with
user-defined refresh window. It is clocked from an independent 32 kHz internal RC (LSI).
Independent of the main clock, it can operate in Stop and Standby modes. It can be used
either as a watchdog to reset the device when a problem occurs, or as a free-running timer
for application timeout management. It is hardware- or software-configurable through the
option bytes. Its counter can be frozen in debug mode.
3.18.6 System window watchdog (WWDG)
The window watchdog is based on a 7-bit downcounter that can be set as free-running. It
can be used as a watchdog to reset the device when a problem occurs. It is clocked by the
system clock. It has an early-warning interrupt capability. Its counter can be frozen in debug
mode.
3.18.7 SysTick timer
This timer is dedicated to real-time operating systems, but it can also be used as a standard
down counter.
Features of SysTick timer:
•24-bit down counter
•Autoreload capability
•Maskable system interrupt generation when the counter reaches 0
•Programmable clock source
3.19 Real-time clock (RTC), tamper (TAMP) and backup registers
The device embeds an RTC and five 32-bit backup registers, located in the RTC domain of
the silicon die.
The ways of powering the RTC domain are described in Section 3.7.6.
The RTC is an independent BCD timer/counter.
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Features of the RTC:
•Calendar with subsecond, seconds, minutes, hours (12 or 24 format), week day, date,
month, year, in BCD (binary-coded decimal) format
•Automatic correction for 28, 29 (leap year), 30, and 31 days of the month
•Programmable alarm
•On-the-fly correction from 1 to 32767 RTC clock pulses, usable for synchronization with
a master clock
•Reference clock detection - a more precise second-source clock (50 or 60 Hz) can be
used to improve the calendar precision
•Digital calibration circuit with 0.95 ppm resolution, to compensate for quartz crystal
inaccuracy
•Two anti-tamper detection pins with programmable filter
•Timestamp feature to save a calendar snapshot, triggered by an event on the
timestamp pin or a tamper event, or by switching to VBAT mode
•17-bit auto-reload wakeup timer (WUT) for periodic events, with programmable
resolution and period
•Multiple clock sources and references:
–A 32.768 kHz external crystal (LSE)
–An external resonator or oscillator (LSE)
–The internal low-power RC oscillator (LSI, with typical frequency of 32 kHz)
–The high-speed external clock (HSE) divided by 32
When clocked by LSE, the RTC operates in VBAT mode and in all low-power modes. When
clocked by LSI, the RTC does not operate in VBAT mode, but it does in low-power modes
except for the Shutdown mode.
All RTC events (Alarm, WakeUp Timer, Timestamp or Tamper) can generate an interrupt
and wake the device up from the low-power modes.
The backup registers allow keeping 20 bytes of user application data in the event of V
failure, if a valid backup supply voltage is provided on VBAT pin. They are not affected by
the system reset, power reset, and upon the device’s wakeup from Standby or Shutdown
modes.
3.20 Inter-integrated circuit interface (I2C)
The device embeds three I2C peripherals. Refer to Tab le 8 for the features.
2
The I
C-bus interface handles communication between the microcontroller and the serial
2
I
C-bus. It controls all I2C-bus-specific sequencing, protocol, arbitration and timing.
DD
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Functional overviewSTM32G0B1xB/C/xE
Features of the I2C peripheral:
2
•I
C-bus specification and user manual rev. 5 compatibility:
–Slave and master modes, multimaster capability
–Standard-mode (Sm), with a bitrate up to 100 kbit/s
–Fast-mode (Fm), with a bitrate up to 400 kbit/s
–Fast-mode Plus (Fm+), with a bitrate up to 1 Mbit/s and extra output drive I/Os
–7-bit and 10-bit addressing mode, multiple 7-bit slave addresses
–Programmable setup and hold times
–Clock stretching
•SMBus specification rev 3.0 compatibility:
–Hardware PEC (packet error checking) generation and verification with ACK
control
–Command and data acknowledge control
–Address resolution protocol (ARP) support
–Host and Device support
–SMBus alert
–Timeouts and idle condition detection
•PMBus rev 1.3 standard compatibility
•Independent clock: a choice of independent clock sources allowing the I2C
communication speed to be independent of the PCLK reprogramming
•Wakeup from Stop mode on address match
•Programmable analog and digital noise filters
•1-byte buffer with DMA capability
Table 8. I
2
C implementation
I2C features
Standard mode (up to 100 kbit/s)XX
Fast mode (up to 400 kbit/s)XX
Fast Mode Plus (up to 1 Mbit/s) with extra output drive I/Os XX
The device embeds universal synchronous/asynchronous receivers/transmitters that
communicate at speeds of up to 8 Mbit/s.
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They provide hardware management of the CTS, RTS and RS485 DE signals,
multiprocessor communication mode, master synchronous communication and single-wire
half-duplex communication mode. Some can also support SmartCard communication (ISO
7816), IrDA SIR ENDEC, LIN Master/Slave capability and auto baud rate feature, and have
a clock domain independent of the CPU clock, which allows them to wake up the MCU from
Stop mode. The wakeup events from Stop mode are programmable and can be:
•start bit detection
•any received data frame
•a specific programmed data frame
All USART interfaces can be served by the DMA controller.
The device embeds two LPUARTs. The peripheral supports asynchronous serial
communication with minimum power consumption. It supports half duplex single wire
communication and modem operations (CTS/RTS). It allows multiprocessor
communication.
The LPUART has a clock domain independent of the CPU clock, and can wakeup the
system from Stop mode. The Stop mode wakeup events are programmable and can be:
•start bit detection
•any received data frame
•a specific programmed data frame
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Functional overviewSTM32G0B1xB/C/xE
Only a 32.768 kHz clock (LSE) is needed to allow LPUART communication up to 9600
baud. Therefore, even in Stop mode, the LPUART can wait for an incoming frame while
having an extremely low energy consumption. Higher speed clock can be used to reach
higher baudrates.
The LPUART interface can be served by the DMA controller.
3.23 Serial peripheral interface (SPI)
The device contains three SPIs running at up to 32 Mbits/s in master and slave modes. It
supports half-duplex, full-duplex and simplex communications. A 3-bit prescaler gives eight
master mode frequencies. The frame size is configurable from 4 bits to 16 bits. The SPI
peripherals support NSS pulse mode, TI mode and hardware CRC calculation.
The SPI peripherals can be served by the DMA controller.
2
The I
S interface mode of the SPI peripheral (if supported, see the following table) supports
four different audio standards can operate as master or slave, in half-duplex communication
mode. It can be configured to transfer 16 and 24 or 32 bits with 16-bit or 32-bit data
resolution and synchronized by a specific signal. Audio sampling frequency from 8 kHz up to
192 kHz can be set by an 8-bit programmable linear prescaler. When operating in master
mode, it can output a clock for an external audio component at 256 times the sampling
frequency.
Table 10. SPI/I2S implementation
SPI features
Hardware CRC calculationXX
Rx/Tx FIFO XX
NSS pulse modeXX
2
S mode X-
I
TI modeXX
1. X = supported.
(1)
SPI1
SPI2
3.24 Universal serial bus device (USB) and host (USBH)
The devices embed a USB controller with full-speed USB device and host functionality
compliant with the USB specification version 2.0. The internal USB PHY supports USB FS
signaling, embedded DP pull-up and also battery charging detection according to Battery
Charging Specification Revision 1.2. The USB interface implements a full-speed (12 Mbit/s)
function interface with added support for USB 2.0 Link Power Management. It has softwareconfigurable endpoint setting with packet memory up to 1 KB and suspend/resume support.
It requires a precise 48 MHz clock that is generated from the internal main PLL (the clock
source must use a HSE crystal oscillator) or by the internal 48 MHz oscillator in automatic
trimming mode. The synchronization for this oscillator can be taken from the USB data
stream itself (SOF signalization) which allows crystal less operation.
SPI3
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3.25 USB Type-C™ Power Delivery controller
The device embeds two controllers (UCPD1 and UCPD2) compliant with USB Type-C Rev.
1.2 and USB Power Delivery Rev. 3.0 specifications.
The controllers use specific I/Os supporting the USB Type-C and USB Power Delivery
requirements, featuring:
•USB Type-C pull-up (Rp, all values) and pull-down (Rd) resistors
•“Dead battery” support
•USB Power Delivery message transmission and reception
•FRS (fast role swap) support
The digital controller handles notably:
•USB Type-C level detection with de-bounce, generating interrupts
•FRS detection, generating an interrupt
•byte-level interface for USB Power Delivery payload, generating interrupts (DMA
compatible)
•USB Power Delivery timing dividers (including a clock pre-scaler)
•CRC generation/checking
•4b5b encode/decode
•ordered sets (with a programmable ordered set mask at receive)
•frequency recovery in receiver during preamble
The interface offers low-power operation compatible with Stop mode, maintaining the
capacity to detect incoming USB Power Delivery messages and FRS signaling.
3.26 Controller area network (FDCAN)
The controller area network (CAN) subsystem consists of two CAN modules and a message
RAM.
The CAN modules are compliant with ISO 11898-1 (CAN protocol specification version 2.0
part A, B) and CAN FD protocol specification version 1.0.
The 1-Kbyte message RAM per CAN module implements filters, receive FIFOs, receive
buffers, transmit event FIFOs, and transmit buffers.
3.27 Development support
3.27.1 Serial wire debug port (SW-DP)
An Arm SW-DP interface is provided to allow a serial wire debugging tool to be connected to
the MCU.
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Pinouts, pin description and alternate functionsSTM32G0B1xB/C/xE
Top view
LQFP100
1
2
3
4
5
6
7
8
9
10
11
12
54
53
52
51
62
61
60
59
58
57
56
55
787679
77
84
82
80
878685
83
81
384037
39
28
34
36
41
26
27
33
35
13
14
15
16
32
293031
66
65
64
63
88
919089
17
18
19
20
21
22
23
24
25
464845
47
42
444943
50
71
70
69
68
67
75
74
73
72
93
969594
92
97
100
99
98
VDDIO2
VSS
PF8
PA13
PA12 [PA10]
PA11 [PA9]
PA10
PA15
PD9
PD8
PC7
PC6
PD15
PD14
PD13
PD12
PB15
PB14
PB13
PB12
PA3
PA4
PA5
PA6
PA7
PC4
PC5
PB0
PB1
PE7
PE8
PE9
PE10
PE11
PE12
PE13
PE14
PE15
PB10
PB11
PB9
PC10
PC11
PE4
PE5
VBAT
PC14-OSC32_IN
PC15-OSC32_OUT
PA8
PF9
PF0-OSC_IN
PF2-NRST
PF3
PF4
PF5
PC0
PC2
VSS/VSSA
PC1
VDD/VDDA
PA0
PA1
PA2
PC13
PF1-OSC_OUT
PB8
PB7
PE3
PE2
PE1
PE0
PB5
PB4
PB3
PD7
PD6
PD5
PD4
PD3
PD2
PD0
PC12
PE6
PC8
VREF+
PC3
PB2
PF6
PF7
PA9
PD11
PD10
PA14-BOOT0
PC9
PD1
PF10
PF11
PB6
PF12
PF13
4 Pinouts, pin description and alternate functions
The devices housed in 32-pin, 48-pin, and 64-pin packages come in two variants - “GP” and
“N” (the latter with ordering code having N behind the temperature range digit). Refer to
Table 2: Features and peripheral counts for differences.
Figure 3. STM32G0B1VxT LQFP100 pinout
36/159DS13560 Rev 1
1. The I/O pins supplied by V
are shown in gray.
DDIO2
STM32G0B1xB/C/xEPinouts, pin description and alternate functions
A
B
C
D
E
PC14-
OSC32
_IN
PC12
PE5
PC15-
OSC32
_OUT
VBAT
PC13
VDDVREF+
VSS
PF2-
NRST
PF0-
OSC_I
N
PF4PF3
PB8PE3PE2PE0PB3
PC11PC10
PB7
PE1PB4
PE6PE4
PB9
PB6PB5
PF13PF11PF9
PF12
PF10PD7
PD3
12345678
F
G
H
PF1-
OSC_
OUT
PF5PC1
PF8
PA10
PA9
PD6PD5
PD4PD0
PD1PC8
PB15
910
J
PC0PC2PA0PA3
PA1PA4PC4
PA7
PB0PB2
PE9
PF7PE10
PE14PB12
PE12PE15
K
L
PC3
PA2PA5PA 6PC5
PB1PF6PE7PE8PE11PE13
M
PD15
PD14
PD12
PD11
PD9
PD2
PA15
PA13
PC6
PA11
[PA9]
PD13
VDDIO
2
VSS
PD10
PC9
PA14-
BOOT0
PA12
[PA10]
PD8
PB14
PB11
PC7
PA8
PB10PB13
1112
Top view
Figure 4. STM32G0B1VxI UFBGA100 pinout
1. The I/O pads supplied by V
are shown in gray.
DDIO2
DS13560 Rev 137/159
55
Pinouts, pin description and alternate functionsSTM32G0B1xB/C/xE
Top view
LQFP80
1
2
3
4
5
6
7
8
9
10
11
12
54
53
52
51
42
41
60
59
58
57
56
55
787679
77
64
62
80
676665
63
61
384037
39
28
34
36
21
26
27
33
35
13
14
15
16
32
293031
46
45
44
43
68
717069
17
18
19
20
252224
23
50
49
48
47
737574
72
VDDIO2
VSS
PA13
PA12 [PA10]
PA11 [PA9]
PA10
PD9
PD8
PC7
PC6
PD15
PD14
PD13
PD12
PB15
PA3
PA4
PA5
PA6
PA7
PC4
PC5
PB0
PB1
PE7
PE8
PE9
PE10
PB10
PB11
PB9
PC10
PC11
VBAT
PC14-OSC32_IN
PA8
PF0-OSC_IN
PF2-NRST
PC0
PC2
VSS
PC1
VDD
PA0
PA2
PC13
PF1-OSC_OUT
PB8
PB7
PE3
PE1
PE0
PB5
PB4
PB3
PD7
PD6
PD5
PD4
PD3
PD2
PD0
PC12
PC8
VREF+
PC3
PB2
PA9
PD11
PD10
PA14-BOOT0
PC9
PD1
PB6
PC15-OSC32_OUT
PA1
PB12
PB13
PB14
PA15
Figure 5. STM32G0B1MxT LQFP80 pinout
1. The I/O pins supplied by V
38/159DS13560 Rev 1
are shown in gray.
DDIO2
STM32G0B1xB/C/xEPinouts, pin description and alternate functions
PA0
PA1
PA2
PA3
PA4
PA5
PA6
PA7
PC4
PC5
PB0
PB1
PB2
PB10
PB11
PB12
PC11
PC12
PC13
PC14-OSC32_IN
PC15-OSC32_OUT
VBAT
VREF+
VDD/VDDA
VSS/VSSA
PF2-NRST
PF0-OSC_IN
PF1-OSC_OUT
PC0
PC1
PC2
PC3
PC8
PA15
PA14-BOOT0
PA1 3
PA12 [PA10]
PA11 [PA9]
PA10
VDDIO2
VSS
PC7
PC6
PA9
PA8
PB15
PB14
PB13
PC9
PD0
PD1
PD2
PD3
PD4
PD5
PD6
PB3
PB4
PB5
PB6
PB7
PB8
PB9
PC10
Top view
LQFP64
1
3
4
5
6
7
8
9
10
11
12
13
14
15
16
2
48
46
45
44
43
42
41
40
39
38
37
36
35
34
33
47
55
5352515049
56
54
61
59
57
646362
60
58
26
2829303132
25
27
20
22
24
171819
21
23
PA0
PA1
PA2
PA3
PA4
PA5
PA6
PA7
PC4
PC5
PB0
PB1
PB2
PB10
PB11
PB12
PC11
PC12
PC13
PC14-OSC32_IN
PC15-OSC32_OUT
VBAT
VREF+
VDD/VDDA
VSS/VSSA
PF2-NRST
PF0-OSC_IN
PF1-OSC_OUT
PC0
PC1
PC2
PC3
PC8
PA15
PA14-BOOT0
PA13
PA12 [PA10]
PA11 [PA9]
PA10
PD9
PD8
PC7
PC6
PA9
PA8
PB15
PB14
PB13
PC9
PD0
PD1
PD2
PD3
PD4
PD5
PD6
PB3
PB4
PB5
PB6
PB7
PB8
PB9
PC10
Top view
LQFP64
1
3
4
5
6
7
8
9
10
11
12
13
14
15
16
2
48
46
45
44
43
42
41
40
39
38
37
36
35
34
33
47
55
5352515049
56
54
61
59
57
646362
60
58
26
2829303132
25
27
20
22
24
171819
21
23
GP version
N version
(_RxTxN)
(_RxT)
Figure 6. STM32G0B1RxT LQFP64 pinout
1. The I/O pins supplied by V
DDIO2
are shown in gray.
DS13560 Rev 139/159
55
Pinouts, pin description and alternate functionsSTM32G0B1xB/C/xE
A
B
C
D
E
VDD/
VDDA
VREF+
VBAT
PB5PD3
VSS/
VSSA
PF2-
NRST
PC0
PA7PC7
PF0-
OSC_I
N
PC1
PA3
PA6PB0
PF1-
OSC_
OUT
PC2
PA2
PA5PB1
PC3PA 0PA1PA 4PC4
PC11PC10PB7PB6PD6
PC15-
OSC32
_OUT
PC12
PB8
PB3PD5
PC14-
OSC32
_IN
PC13
PB9
PB4PD4
PA10
PA13
VDDIO
2
PA9
PC6VSS
PB14
PB15PA 8
PB10
PB12PB13
PC5PB2PB11
PD2PD0PC8
PD1
PC9
PA12
[PA10]
PA15
PA14-
BOOT0
PA11
[PA9]
12345678
F
G
H
Top view
N version
(_RxIxN)
Figure 7. STM32G0B1RxI UFBGA64 pinout
1. The I/O pads supplied by V
are shown in gray.
DDIO2
40/159DS13560 Rev 1
STM32G0B1xB/C/xEPinouts, pin description and alternate functions
Top view
A
B
C
D
E
12345678
F
G
H
910111213
VDDIO
2
PC7PC6
VSSPA9
PA8PB15PB11
PB14PB2
PB13PB10PB1
PA15PD0
PA12
[PA10]
PA13
PA14-
BOOT0
PA11
[PA9]
PA10
PB7
PB12PA 2
PA6
PC5PC4
PB0
PD3PB3
PD2
PD1PB6
PB9
PA1
PA5
PA4
PA7
PB5
PB4
VBAT
VREF+
PF2-
NRST
PA3
PC13
VDD/
VDDA
VSS/
VSSA
PF0-
OSC_IN
PF1-
OSC_
OUT
PA0
PB8
PC14-
OSC32
_IN
PC15-
OSC32
_OUT
Figure 8. STM32G0B1NxY WLCSP52 pinout
1. The I/O pads supplied by V
are shown in gray.
DDIO2
DS13560 Rev 141/159
55
Pinouts, pin description and alternate functionsSTM32G0B1xB/C/xE
Table 12. Pin assignment and description (continued)
Pin name
LQFP100
UFBGA80
(function
upon reset)
UFBGA100
Pin type
Note
I/O structure
Alternate
functions
Pinouts, pin description and alternate functionsSTM32G0B1xB/C/xE
Additional
functions
LQFP32 / UFQFPN32 - N
LQFP32 / UFQFPN32 - GP
30 30 45 45 C860 60 A47898C4PB6I/O FT_fa-
31 31 46 46 D761 61 A37999B3PB7I/O FT_fa-
32 32 47 47 A12 62 62 B380 100 A1PB8I/O FT_f-
1148 48D9 63 63 C311C3PB9I/O FT_f-
1. PC13, PC14 and PC15 are supplied through the power switch. Since the switch only sinks a limited amount of current (3 mA), the use of GPIOs PC13 to PC15 in output
mode is limited:
- The speed should not exceed 2 MHz with a maximum load of 30 pF
- These GPIOs must not be used as current sources (for example to drive a LED).
2. After an RTC domain power-up, PC13, PC14 and PC15 operate as GPIOs. Their function then depends on the content of the RTC registers. The RTC registers are not
reset upon system reset. For details on how to manage these GPIOs, refer to the RTC domain and RTC register descriptions in the RM0444 reference manual.
3. Pins PA9/PA10 can be remapped in place of pins PA11/PA12 (default mapping), using SYSCFG_CFGR1 register.
4. Upon reset, these pins are configured as SW debug alternate functions, and the internal pull-up on PA13 pin and the internal pull-down on PA14 pin are activated.
Unless otherwise specified, all voltages are referenced to VSS.
Parameter values defined at temperatures or in temperature ranges out of the ordering
information scope are to be ignored.
Packages used for characterizing certain electrical parameters may differ from the
commercial packages as per the ordering information.
5.1.1 Minimum and maximum values
Unless otherwise specified, the minimum and maximum values are guaranteed in the worst
conditions of ambient temperature, supply voltage and frequencies by tests in production on
100% of the devices with an ambient temperature at T
the selected temperature range).
Data based on characterization results, design simulation and/or technology characteristics
are indicated in the table footnotes and are not tested in production. Based on
characterization, the minimum and maximum values refer to sample tests and represent the
mean value plus or minus three times the standard deviation (mean ±3).
= 25 °C and TA = TA(max) (given by
A
5.1.2 Typical values
Unless otherwise specified, typical data are based on TA = 25 °C, VDD = V
V. They are given only as design guidelines and are not tested.
Typical ADC accuracy values are determined by characterization of a batch of samples from
a standard diffusion lot over the full temperature range, where 95% of the devices have an
error less than or equal to the value indicated
5.1.3 Typical curves
Unless otherwise specified, all typical curves are given only as design guidelines and are
not tested.
5.1.4 Loading capacitor
The loading conditions used for pin parameter measurement are shown in Figure 13.
5.1.5 Pin input voltage
The input voltage measurement on a pin of the device is described in Figure 14.
Figure 13. Pin loading conditionsFigure 14. Pin input voltage
(mean ±2).
DDA
= V
DDIO2
= 3
64/159DS13560 Rev 1
STM32G0B1xB/C/xEElectrical characteristics
MSv66839V2
V
DD
Backup circuitry
(LSE, RTC and
backup registers)
Kernel logic
(CPU, digital and
memories)
Level shifter
IO
logic
IN
OUT
Regulator
GPIOs
1.55 V to 3.6 V
1 x 100 nF
+ 1 x 4.7 μF
VDD/VDDA
VBAT
V
CORE
Power
switch
V
DDIO1
ADC
DAC
COMPs
VREFBUF
VREF+
VREF-
VSS/VSSA
V
REF
100 nF
1 μF
V
SS
V
SSA
V
DDA
V
DD
VREF+
Level shifter
IO
logic
IN
OUT
V
DDIO2
VDDIO2
100 nF
+4.7 μF
V
DDIO2
GPIOs
5.1.6 Power supply scheme
Figure 15. Power supply scheme
Caution:Power supply pin pair (VDD/VDDA/VDDIO2 and VSS/VSSA) must be decoupled with
filtering ceramic capacitors as shown above. These capacitors must be placed as close as
possible to, or below, the appropriate pins on the underside of the PCB to ensure the good
functionality of the device.
DS13560 Rev 165/159
124
Electrical characteristicsSTM32G0B1xB/C/xE
MSv66840V1
I
DDVBAT
V
BAT
I
DD
V
DD
(V
DDA
)
VBAT
VDD/VDDA
VDDIO2
5.1.7 Current consumption measurement
Figure 16. Current consumption measurement scheme
5.2 Absolute maximum ratings
Stresses above the absolute maximum ratings listed in Table 21, Table 22 and Table 23
may cause permanent damage to the device. These are stress ratings only and functional
operation of the device at these conditions is not implied. Exposure to maximum rating
conditions for extended periods may affect device reliability.
All voltages are defined with respect to V
Table 21. Voltage characteristics
SS
.
SymbolRatingsMinMaxUnit
V
DD
V
DDIO2
V
BAT
V
REF+
V
IN
1. Refer to Table 22 for the maximum allowed injected current values.
2. To sustain a voltage higher than 4 V the internal pull-up/pull-down resistors must be disabled.
External supply voltage- 0.34.0
External supply voltage for selected I/Os- 0.34.0
External supply voltage on VBAT pin- 0.34.0
External voltage on VREF+ pin- 0.3Min(
Input voltage on FT_xx pins except FT_c
(1)
Input voltage on FT_c pins
Input voltage on any other pin
- 0.3 V
- 0.3
- 0.3
V
DD
+
DD
5.5
4.0
+ 0.4, 4.0)
(2)
4.0
V
66/159DS13560 Rev 1
STM32G0B1xB/C/xEElectrical characteristics
Table 22. Current characteristics
SymbolRatingsMaxUnit
I
V
DD/VDDA
/VDDIO2
I
V
SS/VSSA
Current into VDD/VDDA/VDDIO2 power pin (source)
Current out of VSS/VSSA ground pin (sink)
(1)
(1)
100
100
Output current sunk by any I/O and control pin except FT_f15
I
IO(PIN)
Output current sunk by any FT_f pin20
Output current sourced by any I/O and control pin15
Total output current sunk by sum of all I/Os and control pins80
I
IO(PIN)
I
INJ(PIN)
|I
INJ(PIN)
1. All main power (VDD/VDDA/VDDIO2, VBAT) and ground (VSS/VSSA) pins must always be connected to the external
power supplies, in the permitted range.
2. A positive injection is induced by V
exceeded. Refer also to Table 21: Voltage characteristics for the maximum allowed input voltage values.
3. Positive injection is not possible on these I/Os and does not occur for input voltages lower than the specified maximum
value.
4. On these I/Os, any current injection disturbs the analog performances of the device.
5. When several inputs are submitted to a current injection, the maximum |I
injected currents (instantaneous values).
Total output current sourced by sum of all I/Os and control pins80
Injected current on a FT_xx pin-5 / NA
(2)
Injected current on a TT_a pin
|
Total injected current (sum of all I/Os and control pins)
> V
IN
(4)
(5)
while a negative injection is induced by VIN < VSS. I
DDIOx
|
is the absolute sum of the negative
INJ(PIN)
-5 / 0
INJ(PIN)
(3)
25
must never be
mA
Table 23. Thermal characteristics
SymbolRatings ValueUnit
T
STG
T
J
Storage temperature range–65 to +150°C
Maximum junction temperature150°C
5.3 Operating conditions
5.3.1 General operating conditions
Table 24. General operating conditions
SymbolParameter ConditionsMinMaxUnit
f
HCLK
f
PCLK
V
V
DDIO2
Internal AHB clock frequency-0 64
Internal APB clock frequency-0 64
Standard operating voltage-1.7
DD
External supply voltage for
selected I/Os
-1.73.6V
(1)
MHz
3.6V
DS13560 Rev 167/159
124
Electrical characteristicsSTM32G0B1xB/C/xE
Table 24. General operating conditions (continued)
SymbolParameter ConditionsMinMaxUnit
V
Analog supply voltage
DDA
For ADC and COMP
operation
For DAC operation1.83.6
1.623.6
For VREFBUF operation2.43.6
V
1. When RESET is released functionality is guaranteed down to V
2. The T
3. Temperature range digit in the order code. See Section 7: Ordering information.
Backup operating voltage-1.553.6V
BAT
Suffix 6
T
Ambient temperature
A
(2)
Suffix 3
Suffix 6
T
Junction temperature
J
Suffix 3
(max) applies to PD(max). At PD < PD(max) the ambient temperature is allowed to go higher than TA(max) provided
A
that the junction temperature TJ does not exceed TJ(max). Refer to Section 6.11: Thermal characteristics.
(3)
(3)
(3)
(3)
(3)
(3)
PDR
-4085
-40105
-40125
-40105
-40125
-40130
min.
5.3.2 Operating conditions at power-up / power-down
The parameters given in Table 25 are derived from tests performed under the ambient
temperature condition summarized in Table 24.
Table 25. Operating conditions at power-up / power-down
V
°CSuffix 7
°CSuffix 7
SymbolParameterConditionsMinMaxUnit
V
rising-
DD
t
VDD slew rate
VDD
falling; ULPEN = 010
V
DD
falling; ULPEN = 1100ms/V
V
DD
5.3.3 Embedded reset and power control block characteristics
The parameters given in Table 26 are derived from tests performed under the ambient
temperature conditions summarized in Table 24: General operating conditions.
Table 26. Embedded reset and power control block characteristics
SymbolParameterConditions
POR
PDR
V
BOR1
(2)
(2)
(2)
POR temporization when VDD crosses V
POR
V
DD
Power-on reset threshold-1.621.661.70V
Power-down reset threshold-1.601.641.69V
V
Brownout reset threshold 1
DD
V
DD
t
RSTTEMPO
V
V
(1)
MinTypMaxUnit
rising-250400s
rising2.052.102.18
falling1.952.002.08
µs/V
V
68/159DS13560 Rev 1
STM32G0B1xB/C/xEElectrical characteristics
Table 26. Embedded reset and power control block characteristics (continued)
SymbolParameterConditions
V
V
BOR2
V
BOR3
V
BOR4
V
V
V
V
V
V
V
PVD0
PVD1
PVD2
PVD3
PVD4
PVD5
PVD6
Brownout reset threshold 2
Brownout reset threshold 3
Brownout reset threshold 4
Programmable voltage detector threshold 0
PVD threshold 1
PVD threshold 2
PVD threshold 3
PVD threshold 4
PVD threshold 5
PVD threshold 6
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
Hysteresis in
continuous
V
hyst_POR_PDR
Hysteresis of V
POR
and V
PDR
Hysteresis in
other mode
V
hyst_BOR_PVD
I
DD(BOR_PVD)
1. Continuous mode means Run/Sleep modes, or temperature sensor enable in Low-power run/Low-power sleep modes.
2. Guaranteed by design.
Hysteresis of V
(2)
BOR and PVD consumption--1.11.6µA
BORx
and V
PVDx
(1)
MinTypMaxUnit
rising2.202.312.38
falling2.102.212.28
rising2.502.622.68
falling2.402.522.58
rising2.802.913.00
falling2.702.812.90
rising2.052.152.22
falling1.952.052.12
rising2.202.302.37
falling2.102.202.27
rising2.352.462.54
falling2.252.362.44
rising2.502.622.70
falling2.402.522.60
rising2.652.742.87
falling2.552.642.77
rising2.802.913.03
falling2.702.812.93
rising2.903.013.14
falling2.802.913.04
-20-
mode
-30-
--100-mV
V
V
V
V
V
V
V
V
V
V
mV
DS13560 Rev 169/159
124
Electrical characteristicsSTM32G0B1xB/C/xE
MSv40169V1
1.185
1.19
1.195
1.2
1.205
1.21
1.215
1.22
1.225
1.23
1.235
-40-20020406080100120
V
°C
MeanMinMax
5.3.4 Embedded voltage reference
The parameters given in Table 27 are derived from tests performed under the ambient
temperature and supply voltage conditions summarized in Table 24: General operating
conditions.
SymbolParameterConditionsMinTypMaxUnit
Table 27. Embedded internal voltage reference
V
REFINT
t
I
DD(VREFINTBUF)
T
V
V
V
1. The shortest sampling time can be determined in the application by multiple iterations.
Start time of reference voltage
buffer when ADC is enable
V
buffer consumption from
REFINT
VDD when converted by ADC
Internal reference voltage spread
over the temperature range
-4
--812
--12.520
V
= 3 V-57.5
DD
Temperature coefficient--3050
Long term stability1000 hours, T = 25 °C-3001000
Voltage coefficient3.0 V < VDD < 3.6 V-2501200
1/4 reference voltage
1/2 reference voltage495051
-
3/4 reference voltage747576
Figure 17. V
vs. temperature
REFINT
(2)
--µs
242526
(2)
(2)
(2)
(2)
(2)
(2)
µs
µA
mV
ppm/°C
ppm
ppm/V
%
V
REFINT
70/159DS13560 Rev 1
STM32G0B1xB/C/xEElectrical characteristics
5.3.5 Supply current characteristics
The current consumption is a function of several parameters and factors such as the
operating voltage, ambient temperature, I/O pin loading, device software configuration,
operating frequencies, I/O pin switching rate, program location in memory and executed
binary code.
The current consumption is measured as described in Figure 16: Current consumption
measurement scheme.
Typical and maximum current consumption
The MCU is placed under the following conditions:
•All I/O pins are in analog input mode
•All peripherals are disabled except when explicitly mentioned
•The Flash memory access time is adjusted with the minimum wait states number,
depending on the f
to CPU clock (HCLK) frequency” available in the RM0444 reference manual).
•When the peripherals are enabled f
•For Flash memory and shared peripherals f
Unless otherwise stated, values given in Table 29 through Table 36 are derived from tests
performed under ambient temperature and supply voltage conditions summarized in
Table 24: General operating conditions.
frequency (refer to the table “Number of wait states according
HCLK
= f
PCLK
HCLK
PCLK
= f
HCLK
= f
HCLKS
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124
Electrical characteristicsSTM32G0B1xB/C/xE
Table 28. Current consumption in Run and Low-power run modes
at different die temperatures
(1)
Unit
C
mA
SymbolParameter
Supply
current in
I
DD(Run)
Run mode
(from Flash
memory)
Generalf
Range 1;
PLL enabled;
= f
f
HCLK
HSE_bypass
(16 MHz),
= f
f
HCLK
(>16 MHz);
(3)
PLLRCLK
Range 2;
PLL enabled;
= f
f
HCLK
HSE_bypass
(16 MHz),
= f
f
HCLK
(>16 MHz);
(3)
PLLRCLK
ConditionsTypMax
HCLK
64 MHz
Fetch
from
25°C85°C125°C25°C85°C130°
(2)
8.68.89.49.09.19.7
56 MHz7.57.88.37.98.08.6
48 MHz6.77.07.67.17.27.8
32 MHz4.64.85.44.85.05.5
Flash
memory
24 MHz3.63.84.33.84.14.6
16 MHz2.32.53.02.42.63.2
64 MHz
8.88.99.49.39.49.9
56 MHz7.77.88.38.28.38.8
48 MHz6.97.07.57.37.47.9
SRAM
32 MHz4.74.85.35.05.15.6
24 MHz3.63.84.34.14.24.7
16 MHz2.32.42.92.52.63.2
16 MHz
8 MHz1.01.11.61.31.42.1
2 MHz0.30.40.90.60.91.4
16 MHz
8 MHz1.01.11.61.31.52.1
Flash
memory
SRAM
1.82.02.42.22.32.9
1.92.02.52.32.43.0
2 MHz0.30.40.90.60.91.4
2 MHz
2804159505858451515
1 MHz155285820530835 1315
Flash
memory
2503608555758351495
SRAM
I
DD(LPRun)
Supply
current in
Low-power
run mode
PLL disabled;
= f
f
HCLK
HSE
bypass (> 32 kHz),
f
= f
HCLK
bypass (= 32 kHz);
(3)
LSE
500 kHz90220750475795 1220
125 kHz45170700445745 1190
32 kHz301556954307201185
2 MHz
1 MHz140260730530825 1300
500 kHz80205650475780 1230
125 kHz40155635440745 1200
32 kHz301356254157151180
1. Based on characterization results, not tested in production.
2. Prefetch and cache enabled when fetching from Flash memory. Code compiled with high optimization for space in SRAM.
= 3.0 V for values in Typ columns and 3.6 V for values in Max columns, all peripherals disabled, cache enabled,
3. V
DD
prefetch disabled for code and data fetch from Flash and enabled from SRAM
72/159DS13560 Rev 1
µA
STM32G0B1xB/C/xEElectrical characteristics
Table 29. Typical current consumption in Run and Low-power run modes,
depending on code executed
SymbolParameter
Supply
I
DD(Run)
current in
Run mode
GeneralCode
Range 1;
= f
f
HCLK
64 MHz;
(2)
PLLRCLK
=
Range 2;
f
HCLK
= f
HSI16
=
16 MHz,
PLL disabled,
(2)
ConditionsTyp
Unit
Reduced code
(3)
Fetch
from
25 °C25 °C
(1)
8.70
Coremark8.15127
Dhrystone 2.18.00125
Flash
memory
Fibonacci7.30114
While(1) loop5.9092
Reduced code
(3)
8.85138
Coremark9.10142
Dhrystone 2.18.95140
SRAM
Fibonacci9.85154
While(1) loop8.85138
Reduced code
(3)
2.45153
mA
Coremark1.90119
Dhrystone 2.11.90119
Flash
memory
Fibonacci1.70106
While(1) loop1.3584
Reduced code
(3)
2.10131
Coremark2.10131
Typ
Unit
136
A/MHz
Dhrystone 2.12.05128
SRAM
Fibonacci2.25141
While(1) loop2.05128
Reduced code
(3)
485
243
Coremark475238
Dhrystone 2.1480240
Flash
memory
Fibonacci500250
I
DD(LPRun)
Supply
current in
Low-power
run mode
f
= f
HCLK
HSI16
2 MHz;
PLL disabled,
(2)
/8 =
While(1) loop515258
Reduced code
(3)
490245
A
Coremark485243
Dhrystone 2.1480240
SRAM
Fibonacci510255
While(1) loop480240
1. Prefetch and cache enabled when fetching from Flash. Code compiled with high optimization for space in SRAM.
VDD = 3.3 V, all peripherals disabled, cache enabled, prefetch disabled for execution in Flash and enabled in SRAM
2.
DS13560 Rev 173/159
A/MHz
124
Electrical characteristicsSTM32G0B1xB/C/xE
3. Reduced code used for characterization results provided in Table 28.
Table 30. Current consumption in Sleep and Low-power sleep modes
ConditionsTypMax
SymbolParameter
General
Voltage
scaling
Flash memory enabled;
= f
I
DD(Sleep)
Supply
current in
Sleep
mode
f
HCLK
(16 MHz; PLL
disabled),
f
HCLK
(>16 MHz; PLL
= f
bypass
HSE
PLLRCLK
Range 1
enabled);
All peripherals disabled
Range 2
Supply
I
DD(LPSleep)
current in
Low-power
sleep mode
1. Based on characterization results, not tested in production.
Flash memory disabled;
PLL disabled;
= f
f
HCLK
f
HCLK
bypass (> 32 kHz),
HSE
= f
bypass (= 32 kHz);
LSE
All peripherals disabled
f
HCLK
25°C85°C125°C25°C85°C130°
64 MHz1.92.02.62.52.63.3
56 MHz1.71.82.42.22.43.2
48 MHz1.51.62.21.92.12.8
32 MHz1.11.21.81.41.62.3
24 MHz0.91.01.61.21.32.1
16 MHz0.50.61.20.70.91.6
16 MHz0.40.61.00.60.71.4
8 MHz0.30.40.90.40.51.2
2 MHz0.20.30.70.20.41.0
2 MHz70200 705175 500 1325
1 MHz48175 685145 438 1285
500 kHz37165 670130 413 1255
125 kHz28155 665105 388 1250
32 kHz2615066090375 1210
(1)
Unit
C
mA
µA
Table 31. Current consumption in Stop 0 mode
ConditionsTypMax
SymbolParameter
HSI kernelV
DD
1.8 V290370675370470850
2.4 V295370680370470870
Enabled
3 V295375695375475930
I
DD(Stop 0)
Supply
current in
Stop 0
3.6 V3003806953754751050
1.8 V100190505180290680
mode
2.4 V100195510180290685
Disabled
3 V105195525180295695
3.6 V105200530185305830
1. Based on characterization results, not tested in production.
(1)
Unit
25°C85°C125°C25°C85°C130°C
µA
74/159DS13560 Rev 1
STM32G0B1xB/C/xEElectrical characteristics
Table 32. Current consumption in Stop 1 mode
ConditionsTypMax
SymbolParameter
Flash
memory
RTC
(2)
1.8 V2.925105---
2.4 V3.126110---
Disabled
3.6 V3.626110---
1.8 V3.325105---
2.4 V3.626110---
I
DD(Stop 1)
Supply
current in
Stop 1
Not
powered
Enabled
mode
3.6 V4.227110---
1.8 V7.030110---
2.4 V7.330115---
PoweredDisabled
3.6 V7.831115---
1. Based on characterization results, not tested in production.
2. Clocked by LSI
(1)
V
25°C85°C 125°C 25°C85°C130°C
DD
3 V3.326110---
3 V3.726110---
3 V7.530115---
Unit
µA
SymbolParameter
Supply current
I
DD(Standby)
in Standby
mode
Table 33. Current consumption in Standby mode
ConditionsTypMax
(2)
GeneralV
RTC disabled
RTC enabled,
clocked by LSI;
IWDG enabled,
clocked by LSI
ULPEN = 0
1.8 V0.12.19.40.81445
2.4 V0.12.511.51.21754
3.0 V0.23.013.51.41864
3.6 V0.33.516.01.82174
1.8 V0.42.39.72.01545
2.4 V0.52.811.52.51855
3.0 V0.73.414.03.02064
3.6 V0.94.016.03.32375
1.8 V0.32.39.62.11445
2.4 V0.42.711.52.31754
3.0 V0.53.313.52.61964
3.6 V0.73.816.03.02274
1.8 V0.72.09.4---
2.4 V0.92.411.0---
3.0 V1.12.913.5---
3.6 V1.33.415.5---
25°C 85°C 125°C 25°C 85°C130°C
DD
(1)
Unit
µA
DS13560 Rev 175/159
124
Electrical characteristicsSTM32G0B1xB/C/xE
Table 33. Current consumption in Standby mode (continued)
SymbolParameter
ConditionsTypMax
GeneralV
Extra supply
I
DD(SRAM)
1. Based on characterization results, not tested in production.
2. Without SRAM retention and with ULPEN bit set
3. To be added to I
current to
retain SRAM
(3)
content
DD(Standby)
SRAM retention
enabled
as appropriate
1.8 V------
2.4 V------
3.0 V------
3.6 V------
25°C 85°C 125°C 25°C 85°C130°C
DD
(1)
Unit
µA
Table 34. Current consumption in Shutdown mode
(1)
Unit
nA
SymbolParameter
Supply current
I
DD(Shutdown)
in Shutdown
mode
ConditionsTypMax
RTCV
25 °C 85 °C 125 °C 25 °C 85 °C 130 °C
DD
1.8 V238407050240321039200
Disabled
2.4 V389658050370391044600
3.0 V3811009550370470051500
3.6 V57135011000500570059400
1.8 V23510507400290385047000
Enabled, clocked
by LSE bypass at
32.768 kHz
2.4 V32012508400440469053500
3.0 V42515009950450564061800
3.6 V550185011500590684071200
1. Based on characterization results, not tested in production.
Table 35. Current consumption in VBAT mode
ConditionsTyp
SymbolParameter
RTCV
Enabled, clocked by
LSE bypass at
32.768 kHz
Enabled, clocked by
LSE crystal at
32.768 kHz
I
DD(VBAT)
Supply current in
VBAT mode
Disabled
DD
25°C85°C125°C
1.8 V1954162015
2.4 V3205302366
3.0 V4926352838
3.6 V6279083339
1.8 V1303251550
2.4 V1604001800
3.0 V2105002050
3.6 V2856052400
1.8 V41601450
2.4 V41901700
3.0 V42201950
3.6 V72702250
Unit
nA
76/159DS13560 Rev 1
STM32G0B1xB/C/xEElectrical characteristics
I
SW
V
DDIOxfSW
C××=
I/O system current consumption
The current consumption of the I/O system has two components: static and dynamic.
I/O static current consumption
All the I/Os used as inputs with pull-up generate current consumption when the pin is
externally held low. The value of this current consumption can be simply computed by using
the pull-up/pull-down resistors values given in Table 55: I/O static characteristics.
For the output pins, any external pull-down or external load must also be considered to
estimate the current consumption.
Additional I/O current consumption is due to I/Os configured as inputs if an intermediate
voltage level is externally applied. This current consumption is caused by the input Schmitt
trigger circuits used to discriminate the input value. Unless this specific configuration is
required by the application, this supply current consumption can be avoided by configuring
these I/Os in analog mode. This is notably the case of ADC input pins which should be
configured as analog inputs.
Caution:Any floating input pin can also settle to an intermediate voltage level or switch inadvertently,
as a result of external electromagnetic noise. To avoid current consumption related to
floating pins, they must either be configured in analog mode, or forced internally to a definite
digital value. This can be done either by using pull-up/down resistors or by configuring the
pins in output mode.
I/O dynamic current consumption
In addition to the internal peripheral current consumption measured previously
(seeTable 36: Current consumption of peripherals , the I/Os used by an application also
contribute to the current consumption. When an I/O pin switches, it uses the current from
the I/O supply voltage to supply the I/O pin circuitry and to charge/discharge the capacitive
load (internal or external) connected to the pin:
where
I
is the current sunk by a switching I/O to charge/discharge the capacitive load
SW
V
f
C is the total capacitance seen by the I/O pin: C = C
is the I/O supply voltage
DDIOx
is the I/O switching frequency
SW
INT
+ C
EXT + CS
CS is the PCB board capacitance including the pad pin.
The test pin is configured in push-pull output mode and is toggled by software at a fixed
frequency.
DS13560 Rev 177/159
124
Electrical characteristicsSTM32G0B1xB/C/xE
On-chip peripheral current consumption
The current consumption of the on-chip peripherals is given in the following table. The MCU
is placed under the following conditions:
•All I/O pins are in Analog mode
•The given value is calculated by measuring the difference of the current consumptions:
–when the peripheral is clocked on
–when the peripheral is clocked off
•Ambient operating temperature and supply voltage conditions summarized in Table 21:
Voltage characteristics
•The power consumption of the digital part of the on-chip peripherals is given in the
following table. The power consumption of the analog part of the peripherals (where
applicable) is indicated in each related section of the datasheet.
PeripheralBus
IOPORT BusIOPORT0.50.40.3
GPIOAIOPORT3.12.43.0
GPIOBIOPORT2.92.33.0
GPIOCIOPORT3.02.42.8
GPIODIOPORT2.72.22.5
GPIOEIOPORT1.61.41.6
GPIOFIOPORT2.82.32.6
Bus matrixAHB0.50.50.5
All AHB PeripheralsAHB312630
DMA1/DMAMUXAHB5.14.34.9
CRCAHB0.40.40.5
FLASHAHB221821
All APB peripheralsAPB120110220
AHB to APB bridge
PWRAPB0.40.30.4
WWDGAPB0.40.40.4
DMA2APB1.51.31.5
TIM1APB7.66.37.2
TIM2APB5.24.34.9
TIM3APB4.73.94.3
TIM4APB4.43.74.2
TIM6APB1.21.01.1
TIM7APB0.80.70.8
TIM14APB1.41.21.3
Table 36. Current consumption of peripherals
Consumption in µA/MHz
Range 1Range 2
(1)
APB0.20.20.1
Low-power run
and sleep
78/159DS13560 Rev 1
STM32G0B1xB/C/xEElectrical characteristics
Table 36. Current consumption of peripherals (continued)
Consumption in µA/MHz
PeripheralBus
Range 1Range 2
TIM15APB4.23.53.9
TIM16APB2.72.32.5
TIM17APB0.80.70.7
LPTIM1APB3.32.73.1
LPTIM2APB3.22.73.1
I2C1APB3.63.03.3
I2C2APB3.42.83.2
I2C3APB0.90.70.8
SPI1APB2.21.92.1
SPI2APB2.11.72.0
SPI3APB1.41.21.3
USART1APB7.46.26.9
USART2APB7.46.27.0
USART3APB7.46.26.9
USART4APB2.11.82.0
USART5APB2.31.92.1
USART6APB2.21.82.1
LPUART1APB4.53.74.2
LPUART2APB4.94.14.6
ADCAPB2.42.02.3
DAC1APB1.91.61.8
Low-power run
and sleep
SYSCFG/VREFBUF/COMPAPB0.50.40.5
CECAPB0.40.30.3
CRSAPB0.20.20.3
USBAPB3.32.73.0
FDCANAPB161315
UCPD1APB4.07.959.0
UCPD2APB4.07.959.5
1. The AHB to APB Bridge is automatically active when at least one peripheral is ON on the APB.
2. UCPDx are always clocked by HSI16.
DS13560 Rev 179/159
(2)
(2)
124
Electrical characteristicsSTM32G0B1xB/C/xE
5.3.6 Wakeup time from low-power modes and voltage scaling
transition times
The wakeup times given in Table 37 are the latency between the event and the execution of
the first user instruction.
Table 37. Low-power mode wakeup times
SymbolParameterConditionsTypMaxUnit
Wakeup time from
t
WUSLEEP
Sleep to Run
-1111
mode
Transiting to Low-power-run-mode execution in Flash
memory not powered in Low-power sleep mode;
HCLK = HSI16 / 8 = 2 MHz
t
WULPSLEEP
Wakeup time from
Low-power sleep
mode
Transiting to Run-mode execution in Flash memory not
powered in Stop 0 mode;
HCLK = HSI16 = 16 MHz;
t
WUSTOP0
Wakeup time from
Stop 0
Regulator in Range 1 or Range 2
Transiting to Run-mode execution in SRAM or in Flash
memory powered in Stop 0 mode;
HCLK = HSI16 = 16 MHz;
Regulator in Range 1 or Range 2
(1)
CPU
cycles
111 4
5.66
µs
22.4
t
WUSTOP1
t
WUSTBY
Wakeup time from
Stop 1
Wakeup time from
Standby mode
Transiting to Run-mode execution in Flash memory not
powered in Stop 1 mode;
HCLK = HSI16 = 16 MHz;
Regulator in Range 1 or Range 2
Transiting to Run-mode execution in SRAM or in Flash
memory powered in Stop 1 mode;
HCLK = HSI16 = 16 MHz;
Regulator in Range 1 or Range 2
Transiting to Low-power-run-mode execution in Flash
memory not powered in Stop 1 mode;
HCLK = HSI16/8 = 2 MHz;
Regulator in low-power mode (LPR = 1 in PWR_CR1)
Transiting to Low-power-run-mode execution in SRAM or
in Flash memory powered in Stop 1 mode;
HCLK = HSI16 / 8 = 2 MHz;
Regulator in low-power mode (LPR = 1 in PWR_CR1)
Transiting to Run mode;
HCLK = HSI16 = 16 MHz;
Regulator in Range 1
9.011.2
57.5
µs
2225.3
1823.5
14.530µs
80/159DS13560 Rev 1
STM32G0B1xB/C/xEElectrical characteristics
Table 37. Low-power mode wakeup times
(1)
(continued)
SymbolParameterConditionsTypMaxUnit
t
WUSHDN
Wakeup time from
Shutdown mode
Wakeup time from
t
WULPRUN
1. Based on characterization results, not tested in production.
2. Time until REGLPF flag is cleared in PWR_SR2.
Low-power run
(2)
mode
Transiting to Run mode;
HCLK = HSI16 = 16 MHz;
Regulator in Range 1
Transiting to Run mode;
HSISYS = HSI16/8 = 2 MHz
Table 38. Regulator mode transition times
(1)
258340µs
57µs
SymbolParameterConditionsTypMaxUnit
t
VOST
1. Based on characterization results, not tested in production.
2. Time until VOSF flag is cleared in PWR_SR2.
Transition times between regulator
Range 1 and Range 2
(2)
Table 39. Wakeup time using LPUART
HSISYS = HSI162040µs
(1)
SymbolParameterConditionsTypMaxUnit
Wakeup time needed to calculate the maximum
t
WULPUART
LPUART baud rate allowing to wakeup up from Stop
mode when LPUART clock source is HSI16
1. Guaranteed by design.
Stop mode 0-1.7
Stop mode 1-8.5
5.3.7 External clock source characteristics
High-speed external user clock generated from an external source
In bypass mode the HSE oscillator is switched off and the input pin is a standard GPIO.
The external clock signal has to respect the I/O characteristics in Section 5.3.14. See
Figure 18 for recommended clock input waveform.
Table 40. High-speed external user clock characteristics
SymbolParameterConditionsMinTypMaxUnit
f
HSE_ext
V
HSEH
V
HSEL
Voltage scaling
Range 1
User external clock source frequency
Voltage scaling
Range 2
OSC_IN input pin high level voltage-0.7 V
OSC_IN input pin low level voltage-V
-848
-826
DDIO1
SS
(1)
-V
-0.3 V
DDIO1
DDIO1
µs
MHz
V
DS13560 Rev 181/159
124
Electrical characteristicsSTM32G0B1xB/C/xE
MS19214V2
V
HSEH
t
f(HSE)
90%
10%
T
HSE
t
t
r(HSE)
V
HSEL
t
w(HSEH)
t
w(HSEL)
Table 40. High-speed external user clock characteristics
(1)
(continued)
SymbolParameterConditionsMinTypMaxUnit
t
w(HSEH)
t
w(HSEL)
1. Guaranteed by design.
OSC_IN high or low time
Voltage scaling
Range 1
Voltage scaling
Range 2
7- -
18--
Figure 18. High-speed external clock source AC timing diagram
ns
Low-speed external user clock generated from an external source
In bypass mode the LSE oscillator is switched off and the input pin is a standard GPIO.
The external clock signal has to respect the I/O characteristics in Section 5.3.14. See
Figure 19 for recommended clock input waveform.
Table 41. Low-speed external user clock characteristics
SymbolParameterConditionsMinTypMaxUnit
f
LSE_ext
V
LSEH
V
t
w(LSEH)
t
w(LSEL)
1. Guaranteed by design.
User external clock source frequency--32.7681000kHz
OSC32_IN input pin high level voltage-0.7 V
OSC32_IN input pin low level voltage-V
LSEL
DDIO1
SS
OSC32_IN high or low time-250--ns
(1)
-V
-0.3 V
DDIO1
DDIO1
V
82/159DS13560 Rev 1
STM32G0B1xB/C/xEElectrical characteristics
MS19215V2
V
LSEH
t
f(LSE)
90%
10%
T
LSE
t
t
r(LSE)
V
LSEL
t
w(LSEH)
t
w(LSEL)
Figure 19. Low-speed external clock source AC timing diagram
High-speed external clock generated from a crystal/ceramic resonator
The high-speed external (HSE) clock can be supplied with a 4 to 48 MHz crystal/ceramic
resonator oscillator. All the information given in this paragraph are based on design
simulation results obtained with typical external components specified in Table 42. In the
application, the resonator and the load capacitors have to be placed as close as possible to
the oscillator pins in order to minimize output distortion and startup stabilization time. Refer
to the crystal resonator manufacturer for more details on the resonator characteristics
(frequency, package, accuracy).
Table 42. HSE oscillator characteristics
SymbolParameterConditions
(2)
(1)
MinTypMaxUnit
f
OSC_IN
R
Oscillator frequency-4848MHz
Feedback resistor--200-k
F
During startup
V
= 3 V,
DD
Rm = 30 ,
CL = 10 pF@8 MHz
= 3 V,
V
DD
Rm = 45 ,
CL = 10 pF@8 MHz
= 3 V,
V
I
DD(HSE)
HSE current consumption
DD
Rm = 30 ,
CL = 5 pF@48 MHz
= 3 V,
V
DD
Rm = 30 ,
CL = 10 pF@48 MHz
= 3 V,
V
DD
Rm = 30 ,
CL = 20 pF@48 MHz
G
t
SU(HSE)
1. Guaranteed by design.
2. Resonator characteristics given by the crystal/ceramic resonator manufacturer.
Maximum critical crystal
m
transconductance
(4)
Startup time VDD is stabilized-2-ms
Startup--1.5mA/V
DS13560 Rev 183/159
(3)
--5.5
-0.44-
-0.45-
mA
-0.68-
-0.94-
-1.77-
124
Electrical characteristicsSTM32G0B1xB/C/xE
MS19876V1
(1)
OSC_IN
OSC_OUT
R
F
Bias
controlled
gain
f
HSE
R
EXT
8 MHz
resonator
Resonator with integrated
capacitors
C
L1
C
L2
3. This consumption level occurs during the first 2/3 of the t
4. t
is the startup time measured from the moment it is enabled (by software) to a stabilized 8 MHz oscillation is
SU(HSE)
reached. This value is measured for a standard crystal resonator and it can vary significantly with the crystal manufacturer
SU(HSE)
startup time
For CL1 and CL2, it is recommended to use high-quality external ceramic capacitors in the
5 pF to 20 pF range (typ.), designed for high-frequency applications, and selected to match
the requirements of the crystal or resonator (see Figure 20). C
and C
L1
are usually the
L2
same size. The crystal manufacturer typically specifies a load capacitance which is the
series combination of C
and CL2. PCB and MCU pin capacitance must be included (10 pF
L1
can be used as a rough estimate of the combined pin and board capacitance) when sizing
C
and CL2.
L1
Note:For information on selecting the crystal, refer to the application note AN2867 “Oscillator
design guide for ST microcontrollers” available from the ST website www.st.com.
Figure 20. Typical application with an 8 MHz crystal
84/159DS13560 Rev 1
1. R
value depends on the crystal characteristics.
EXT
Low-speed external clock generated from a crystal resonator
The low-speed external (LSE) clock can be supplied with a 32.768 kHz crystal resonator
oscillator. All the information given in this paragraph are based on design simulation results
obtained with typical external components specified in Table 43. In the application, the
resonator and the load capacitors have to be placed as close as possible to the oscillator
pins in order to minimize output distortion and startup stabilization time. Refer to the crystal
resonator manufacturer for more details on the resonator characteristics (frequency,
package, accuracy).
STM32G0B1xB/C/xEElectrical characteristics
MS30253V2
OSC32_IN
OSC32_OUT
Drive
programmable
amplifier
f
LSE
32.768 kHz
resonator
Resonator with integrated
capacitors
C
L1
C
L2
SymbolParameterConditions
Table 43. LSE oscillator characteristics (f
(2)
= 32.768 kHz)
LSE
LSEDRV[1:0] = 00
Low drive capability
LSEDRV[1:0] = 01
Medium low drive capability
I
DD(LSE)
LSE current consumption
LSEDRV[1:0] = 10
Medium high drive capability
LSEDRV[1:0] = 11
High drive capability
LSEDRV[1:0] = 00
Low drive capability
LSEDRV[1:0] = 01
Gm
critmax
Maximum critical crystal
gm
Medium low drive capability
LSEDRV[1:0] = 10
Medium high drive capability
LSEDRV[1:0] = 11
High drive capability
(3)
t
SU(LSE)
1. Guaranteed by design.
2. Refer to the note and caution paragraphs below the table, and to the application note AN2867 “Oscillator design guide for
ST microcontrollers”.
3. t
SU(LSE)
reached. This value is measured for a standard crystal and it can vary significantly with the crystal manufacturer
Startup time VDD is stabilized-2-s
is the startup time measured from the moment it is enabled (by software) to a stabilized 32.768 kHz oscillation is
(1)
MinTypMaxUnit
-250-
-315-
-500-
-630-
--0.5
--0.75
--1.7
--2.7
nA
µA/V
Note:For information on selecting the crystal, refer to the application note AN2867 “Oscillator
Note:An external resistor is not required between OSC32_IN and OSC32_OUT and it is forbidden
design guide for ST microcontrollers” available from the ST website www.st.com.
Figure 21. Typical application with a 32.768 kHz crystal
to add one.
DS13560 Rev 185/159
124
Electrical characteristicsSTM32G0B1xB/C/xE
5.3.8 Internal clock source characteristics
The parameters given in Table 44 are derived from tests performed under ambient
temperature and supply voltage conditions summarized in Table 24: General operating
conditions. The provided curves are characterization results, not tested in production.
High-speed internal (HSI16) RC oscillator
Table 44. HSI16 oscillator characteristics
SymbolParameterConditionsMinTypMaxUnit
(1)
f
HSI16
Temp(HSI16)
VDD(HSI16)
HSI16 Frequency VDD=3.0 V, TA=30 °C15.88-16.08MHz
HSI16 oscillator frequency drift over
temperature
HSI16 oscillator frequency drift over
V
DD
TRIMHSI16 frequency user trimming step
(2)
D
HSI16
t
su(HSI16)
t
stab(HSI16)
I
DD(HSI16)
1. Based on characterization results, not tested in production.
2. Guaranteed by design.
Duty Cycle-45-55%
(2)
HSI16 oscillator start-up time--0.81.2s
(2)
HSI16 oscillator stabilization time--35s
(2)
HSI16 oscillator power consumption--155190A
= 0 to 85 °C-1-1%
T
A
= -40 to 125 °C-2-1.5
T
A
%
VDD=1.62 V to 3.6 V-0.1-0.05%
From code 127 to 128-8-6-4
From code 63 to 64
From code 191 to 192
For all other code
increments
-5.8-3.8-1.8
0.20.30.4
%
86/159DS13560 Rev 1
STM32G0B1xB/C/xEElectrical characteristics
MSv39299V1
15.6
15.7
15.8
15.9
16
16.1
16.2
16.3
16.4
MHz
minmeanmax
+1%
-1%
+2%
-2%
+1.5%
-1.5%
-40-20020406080100120 °C
Figure 22. HSI16 frequency vs. temperature
High-speed internal 48 MHz (HSI48) RC oscillator
Table 45. HSI48 oscillator characteristics
SymbolParameterConditionsMinTypMaxUnit
f
HSI48
HSI48 FrequencyVDD=3.0V, TA=30°C-48-MHz
TRIMHSI48 user trimming step--0.11
USER TRIM
COVERAGE
HSI48 user trimming coverage±32 steps±3
DuCy(HSI48) Duty Cycle-45
= 3.0 V to 3.6 V,
V
Accuracy of the HSI48 oscillator
ACC
HSI48_REL
over temperature (factory
calibrated)
D
(HSI48)
VDD
tsu(HSI48)HSI48 oscillator start-up time--2.5
IDD(HSI48)
jitter
N
T
P
jitter
T
HSI48 oscillator frequency drift
with V
DD
HSI48 oscillator power
consumption
Next transition jitter
Accumulated jitter on 28 cycles
Paired transition jitter
Accumulated jitter on 56 cycles
DD
= –15 to 85 °C
T
A
= 1.65 V to 3.6 V,
V
DD
= –40 to 125 °C
T
A
VDD = 3 V to 3.6 V-0.025
VDD = 1.65 V to 3.6 V-0.05
--340
(4)
(4)
--+/-0.15
--+/-0.25
(1)
(2)
(3)
(2)
(3)
±3.5
-55
--±3
--±4.5
(3)
(3)
(2)
(2)
(2)
(2)
(2)
0.18
-%
(2)
(3)
(3)
(3)
0.05
(3)
0.1
(2)
6
(2)
380
-ns
-ns
%
%
%
%
s
A
DS13560 Rev 187/159
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Electrical characteristicsSTM32G0B1xB/C/xE
MSv40989V1
-6
-4
-2
0
2
4
6
-50-30-101030507090110130
Avgminmax
°C
%
1. VDD = 3 V, TA = –40 to 125°C unless otherwise specified.
2. Guaranteed by design.
3. Guaranteed by characterization results.
4. Jitter measurement are performed without clock source activated in parallel.
Figure 23. HSI48 frequency versus temperature
Low-speed internal (LSI) RC oscillator
Table 46. LSI oscillator characteristics
SymbolParameterConditionsMinTypMaxUnit
= 3.0 V, TA = 30 °C31.04-32.96
V
DD
f
LSI
LSI frequency
V
= 1.62 V to 3.6 V, TA = -40 to
DD
125 °C
(2)
t
SU(LSI)
t
STAB(LSI)
I
DD(LSI)
1. Based on characterization results, not tested in production.
2. Guaranteed by design.
LSI oscillator start-up time--80130s
(2)
LSI oscillator stabilization time5% of final frequency-125180s
LSI oscillator power
(2)
consumption
--110180nA
(1)
kHz
29.5-34
88/159DS13560 Rev 1
STM32G0B1xB/C/xEElectrical characteristics
5.3.9 PLL characteristics
The parameters given in Table 47 are derived from tests performed under temperature and
V
supply voltage conditions summarized in Table 24: General operating conditions.
DD
Table 47. PLL characteristics
SymbolParameterConditionsMinTypMaxUnit
f
PLL_IN
D
PLL_IN
PLL input clock frequency
PLL input clock duty cycle-45-55%
(2)
-2.66-16MHz
Voltage scaling Range 13.09-122
f
PLL_P_OUT
PLL multiplier output clock P
Voltage scaling Range 23.09-40
Voltage scaling Range 112-128
f
PLL_Q_OUT
PLL multiplier output clock Q
Voltage scaling Range 212-33
Voltage scaling Range 112-64
f
PLL_R_OUT
PLL multiplier output clock R
Voltage scaling Range 212-16
(1)
MHz
MHz
MHz
f
VCO_OUT
t
LOCK
Jitter
PLL VCO output
Voltage scaling Range 296-128
PLL lock time--1540s
RMS cycle-to-cycle jitter
-50-
System clock 56 MHz
RMS period jitter-40-
VCO freq = 96 MHz-200260
Voltage scaling Range 196-344
I
DD(PLL)
PLL power consumption
(1)
on V
DD
VCO freq = 344 MHz-520650
1. Guaranteed by design.
2. Take care of using the appropriate division factor M to obtain the specified PLL input clock values. The M factor is shared
between the two PLLs.
5.3.10 Flash memory characteristics
Table 48. Flash memory characteristics
SymbolParameter ConditionsTypMaxUnit
t
prog
64-bit programming time-85125µs
Normal programming2.74.6
t
prog_row
Row (32 double word) programming time
Fast programming1.72.8
Normal programming21.836.6
t
prog_page
t
ERASE
t
prog_bank
t
ME
Page (2 Kbyte) programming time
Fast programming13.722.4
Page (2 Kbyte) erase time-22.040.0
Bank (512 Kbyte
(2)
) programming time
Normal programming2.84.7
Fast programming1.82.9
Mass erase time-22.140.1ms
(1)
MHz
±ps
AVCO freq = 192 MHz-300380
ms
s
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Electrical characteristicsSTM32G0B1xB/C/xE
Table 48. Flash memory characteristics
(1)
(continued)
SymbolParameter ConditionsTypMaxUnit
Programming3-
I
DD(FlashA)
Average consumption from V
DD
Mass erase5-
I
DD(FlashP)
Maximum current (peak)
Programming, 2 µs peak
duration
7-
Erase, 41 µs peak duration7-
1. Guaranteed by design.
2. Values provided also apply to devices with less Flash memory than one 512 Kbyte bank
SymbolParameter ConditionsMin
N
t
RET
END
EnduranceTA = -40 to +105 °C10kcycles
Data retention
Table 49. Flash memory endurance and data retention
1 kcycle
1 kcycle
1 kcycle
10 kcycles
10 kcycles
10 kcycles
(2)
at TA = 85 °C30
(2)
at TA = 105 °C15
(2)
at TA = 125 °C7
(2)
at TA = 55 °C30
(2)
at TA = 85 °C15
(2)
at TA = 105 °C10
(1)
Unit
Years
mAPage erase3-
mA
1. Guaranteed by characterization results.
2. Cycling performed over the whole temperature range.
5.3.11 EMC characteristics
Susceptibility tests are performed on a sample basis during device characterization.
Functional EMS (electromagnetic susceptibility)
While a simple application is executed on the device (toggling 2 LEDs through I/O ports).
the device is stressed by two electromagnetic events until a failure occurs. The failure is
indicated by the LEDs:
•Electrostatic discharge (ESD) (positive and negative) is applied to all device pins until
a functional disturbance occurs. This test is compliant with the IEC 61000-4-2 standard.
•FTB: A Burst of Fast Transient voltage (positive and negative) is applied to V
V
through a 100 pF capacitor, until a functional disturbance occurs. This test is
SS
compliant with the IEC 61000-4-4 standard.
A device reset allows normal operations to be resumed.
The test results are given in Table 50. They are based on the EMS levels and classes
defined in application note AN1709.
DD
and
90/159DS13560 Rev 1
STM32G0B1xB/C/xEElectrical characteristics
SymbolParameterConditions
V
FESD
V
EFTB
Voltage limits to be applied on any I/O pin to
induce a functional disturbance
Fast transient voltage burst limits to be applied
through 100 pF on VDD and V
functional disturbance
Table 50. EMS characteristics
= 3.3 V, TA = +25 °C,
V
DD
f
= 64 MHz, LQFP100,
HCLK
conforming to IEC 61000-4-2
VDD = 3.3 V, TA = +25 °C,
pins to induce a
SS
f
= 64 MHz, LQFP100,
HCLK
conforming to IEC 61000-4-4
Designing hardened software to avoid noise problems
EMC characterization and optimization are performed at component level with a typical
application environment and simplified MCU software. It should be noted that good EMC
performance is highly dependent on the user application and the software in particular.
Therefore it is recommended that the user applies EMC software optimization and
prequalification tests in relation with the EMC level requested for his application.
Software recommendations
The software flowchart must include the management of runaway conditions such as:
•corrupted program counter
•unexpected reset
•critical data corruption (for example control registers)
Level/
Class
2B
5A
Prequalification trials
Most of the common failures (unexpected reset and program counter corruption) can be
reproduced by manually forcing a low state on the NRST pin or the Oscillator pins for 1
second.
To complete these trials, ESD stress can be applied directly on the device, over the range of
specification values. When unexpected behavior is detected, the software can be hardened
to prevent unrecoverable errors occurring (see application note AN1015).
Electromagnetic Interference (EMI)
The electromagnetic field emitted by the device are monitored while a simple application is
executed (toggling 2 LEDs through the I/O ports). This emission test is compliant with
IEC 61967-2 standard which specifies the test board and the pin loading.
DS13560 Rev 191/159
124
Electrical characteristicsSTM32G0B1xB/C/xE
Table 51. EMI characteristics
SymbolParameterConditions
0.1 MHz to 30 MHz9
VDD = 3.6 V, TA = 25 °C,
S
EMI
Peak level
LQFP100 package
compliant with IEC 61967-2
30 MHz to 130 MHz16
130 MHz to 1 GHz4
1 GHz to 2 GHz8
EMI level2.5-
5.3.12 Electrical sensitivity characteristics
Based on three different tests (ESD, LU) using specific measurement methods, the device is
stressed in order to determine its performance in terms of electrical sensitivity.
Electrostatic discharge (ESD)
Electrostatic discharges (a positive then a negative pulse separated by 1 second) are
applied to the pins of each sample according to each pin combination. The sample size
depends on the number of supply pins in the device (3 parts × (n+1) supply pins). This test
conforms to the ANSI/JEDEC standard.
Table 52. ESD absolute maximum ratings
Monitored
frequency band
Max vs.
[f
HSE/fHCLK
]
8 MHz / 64 MHz
Unit
dBµV
SymbolRatingsConditionsClass
V
ESD(HBM)
V
ESD(CDM)
1. Based on characterization results, not tested in production.
Electrostatic discharge voltage
(human body model)
Electrostatic discharge voltage
(charge device model)
TA = +25 °C, conforming to
ANSI/ESDA/JEDEC JS-001
TA = +25 °C, conforming to
ANSI/ESDA/JEDEC JS-002
22000
C2a250
Maximum
(1)
value
Static latch-up
Two complementary static tests are required on six parts to assess the latch-up
performance:
•A supply overvoltage is applied to each power supply pin.
•A current is injected to each input, output and configurable I/O pin.
These tests are compliant with EIA/JESD 78A IC latch-up standard.
SymbolParameterConditionsClass
LUStatic latch-up classT
Table 53. Electrical sensitivity
= +125 °C conforming to JESD78II Level A
A
Unit
V
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STM32G0B1xB/C/xEElectrical characteristics
5.3.13 I/O current injection characteristics
As a general rule, current injection to the I/O pins, due to external voltage below VSS or
above V
product operation. However, in order to give an indication of the robustness of the
microcontroller in cases when abnormal injection accidentally happens, susceptibility tests
are performed on a sample basis during device characterization.
Functional susceptibility to I/O current injection
While a simple application is executed on the device, the device is stressed by injecting
current into the I/O pins programmed in floating input mode. While current is injected into
the I/O pin, one at a time, the device is checked for functional failures.
The failure is indicated by an out-of-range parameter: ADC error above a certain limit
(higher than 5 LSB TUE), induced leakage current on adjacent pins out of conventional
limits (-5 µA/+0 µA range) or other functional failure (for example reset occurrence or
oscillator frequency deviation).
Negative induced leakage current is caused by negative injection and positive induced
leakage current is caused by positive injection.
(for standard, 3.3 V-capable I/O pins) should be avoided during normal
DDIOx
Table 54. I/O current injection susceptibility
(1)
SymbolDescription
All except PA4, PA5, PA6, PB0,
I
INJ
1. Based on characterization results, not tested in production.
Injected current on
pin
PB3, and PC0
PA4 , PA 5-50mA
PA6, PB0, PB3, and PC00N/AmA
Functional susceptibility
Negative
injection
-5N/AmA
Positive
injection
Unit
DS13560 Rev 193/159
124
Electrical characteristicsSTM32G0B1xB/C/xE
5.3.14 I/O port characteristics
General input/output characteristics
Unless otherwise specified, the parameters given in Table 55 are derived from tests
performed under the conditions summarized in Table 24: General operating conditions. All
I/Os are designed as CMOS- and TTL-compliant.
SymbolParameterConditionsMinTypMaxUnit
I/O input low level
(1)
V
IL
voltage
I/O input high level
(1)
V
IH
voltage
(3)
V
I/O input hysteresis
hys
Table 55. I/O static characteristics
All
except
1.62 V < V
FT_c
2 V < V
FT_c
DDIOx
1.62 V < V
All
except
1.62 V < V
FT_c
FT_c1.62 V < V
TT_xx,
FT_xx,
1.62 V < V
NRST
< 3.6 V--
DDIOx
< 2.7 V--0.3 x V
< 2.7 V--0.25 x V
DDIOx
< 3.6 V
DDIOx
< 3.6 V0.7 x V
DDIOx
< 3.6 V-200-mV
DDIOx
0.7 x V
+ 0.26
DDIOx
2)
DDIOx
DDIOx
(3)
0.3 x V
0.39 x V
- 0.06
(
--
--
-5
DDIOx
(2)
DDIOx
DDIOx
(3)
DDIOx
V
V0.49 x V
FT_xx
except
FT_c
and
FT_d
I
lkg
Input leakage
(3)
current
FT_c
FT_d
TT_a
Weak pull-up
R
R
1. Refer to Figure 24: I/O input characteristics.
equivalent resistor
PU
(5)
Weak pull-down
PD
equivalent resistor
C
I/O pin capacitance--5-pF
IO
(5)
VIN = V
VIN = V
SS
DDIOx
2. Tested in production.
3. Guaranteed by design.
V
0 < V
IN
DDIOx
V
VIN V
DDIOx
V
+1 V < VIN
DDIOx
(3)
5.5 V
0 < V
V
IN
DDIOx
< VIN 5 V--3000
V
DDIOx
0 < VIN V
V
DDIOx
0 < V
V
DDIOx
V
DDIOx
DDIOx
< VIN 5.5 V--9000
V
IN
DDIOx
< VIN
+ 0.3 V
+1 V--600
DDIOx
--±70
--150
--2000
--4500
--±150
--2000
254055k
254055k
(4)
(4)
(4)
(4)
(4)
nA
94/159DS13560 Rev 1
STM32G0B1xB/C/xEElectrical characteristics
MSv47925V1
1.61.82.02.22.42.62.83.03.23.43.6
0
0.5
1
1.5
2
2.5
3
Minimum required
logic level 1 zone
Minimum required
logic level 0 zone
V
IHmin
= 0.7 V
DDIO
(CMOS standard requirement)
V
ILmax
= 0.3 V
DDIO
(CMOS standard requirement)
Undefined input range
V
IHmin
= 0.49 V
DDIO
+ 0.26
V
ILmax
= 0.39 V
DDIO
- 0.06
V
IN
(V)
V
DDIO
(V)
TTL standard requirement
TTL standard requirement
Device characteristics
Test thresholds
4. This value represents the pad leakage of the I/O itself. The total product pad leakage is provided by this formula:
I
Total_Ileak_max
= 10 µA + [number of I/Os where VIN is applied on the pad] I
lkg
(Max).
5. Pull-up and pull-down resistors are designed with a true resistance in series with a switchable PMOS/NMOS. This
PMOS/NMOS contribution to the series resistance is minimal (~10% order).
All I/Os are CMOS- and TTL-compliant (no software configuration required). Their
characteristics cover more than the strict CMOS-technology or TTL parameters, as shown
in Figure 24.
Figure 24. I/O input characteristics
Characteristics of FT_e I/Os
The following table and figure specify input characteristics of FT_e I/Os.
SymbolParameterConditionsMinTypMaxUnit
I
INJ
V
DDIO1-VIN
R
d
Injected current on pin---5mA
Voltage over V
Diode dynamic serial resistorI
Table 56. Input characteristics of FT_e I/Os
I
DDIO1
= 5 mA--2V
INJ
= 5 mA--300
INJ
DS13560 Rev 195/159
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Electrical characteristicsSTM32G0B1xB/C/xE
MSv63112V1
00.20.40.60.81.01.21.41.61.82
0
1
2
3
4
5
I
INJ
(mA)
V
IN
– V
DDIO1
(V)
-40°C
25°C125°C
Figure 25. Current injection into FT_e input with diode active
Output driving current
The GPIOs (general purpose input/outputs) can sink or source up to ±8 mA, and up to
±15 mA with relaxed V
OL/VOH
.
In the user application, the number of I/O pins which can drive current must be limited to
respect the absolute maximum rating specified in Section 5.2:
•The sum of the currents sourced by all the I/Os on V
consumption of the MCU sourced on V
I
(see Table 21: Voltage characteristics).
VDD
•The sum of the currents sunk by all the I/Os on V
the MCU sunk on V
, cannot exceed the absolute maximum rating I
SS
cannot exceed the absolute maximum rating
DD,
SS
, plus the maximum consumption of
plus the maximum
DDIO1,
(see Table 21:
VSS
Voltage characteristics).
Output voltage levels
Unless otherwise specified, the parameters given in the table below are derived from tests
performed under the ambient temperature and supply voltage conditions summarized in
Table 24: General operating conditions. All I/Os are CMOS- and TTL-compliant (FT OR TT
unless otherwise specified).
96/159DS13560 Rev 1
STM32G0B1xB/C/xEElectrical characteristics
Table 57. Output voltage characteristics
(1)
SymbolParameterConditionsMinMaxUnit
V
Output low level voltage for an I/O pinCMOS port
OL
(2)
-0.4
|IIO| = 2 mA for FT_c I/Os
V
V
Output high level voltage for an I/O pinV
OH
(3)
Output low level voltage for an I/O pinTTL port
OL
= 8 mA for other I/Os
2.7 V
V
DDIOx
(2)
- 0.4-
DDIOx
-0.4
|IIO| = 2 mA for FT_c I/Os
(3)
V
OH
V
V
OH
V
V
OH
V
OLFM+
1. The IIO current sourced or sunk by the device must always respect the absolute maximum rating specified in Table 21:
Voltage characteristics, and the sum of the currents sourced or sunk by all the I/Os (I/O ports and control pins) must always
respect the absolute maximum ratings I
2. TTL and CMOS outputs are compatible with JEDEC standards JESD36 and JESD52.
3. Guaranteed by design.
Output high level voltage for an I/O pin2.4-
(3)
Output low level voltage for an I/O pinAll I/Os except FT_c
OL
(3)
Output high level voltage for an I/O pinV
(3)
Output low level voltage for an I/O pin|IIO| = 1 mA for FT_c I/Os
OL
(3)
Output high level voltage for an I/O pinV
Output low level voltage for an FT I/O
(3)
pin in FM+ mode (FT I/O with _f option)
.
IO
= 8 mA for other I/Os
2.7 V
V
DDIOx
= 15 mA
|I
IO|
V
2.7 V
DDIOx
= 3 mA for other I/Os
1.62 V
V
DDIOx
= 20 mA
|I
IO|
V
2.7 V
DDIOx
= 9 mA
|I
IO|
1.62 V
V
DDIOx
-1.3
- 1.3-
DDIOx
-0.4
- 0.45-
DDIOx
-0.4
-0.4
V
Input/output AC characteristics
The definition and values of input/output AC characteristics are given in Figure 26 and
Table 58, respectively.
Unless otherwise specified, the parameters given are derived from tests performed under
the ambient temperature and supply voltage conditions summarized in Table 24: General
operating conditions.
Table 58. I/O AC characteristics
Speed SymbolParameterConditionsMinMaxUnit
C=50 pF, 2.7 V V
FmaxMaximum frequency
C=50 pF, 1.6 V V
C=10 pF, 2.7 V V
00
C=10 pF, 1.6 V V
C=50 pF, 2.7 V V
Tr/TfOutput rise and fall time
C=50 pF, 1.6 V V
C=10 pF, 2.7 V V
C=10 pF, 1.6 V V
(1)(2)
3.6 V-2
DDIOx
2.7 V-0.35
DDIOx
3.6 V-3
DDIOx
2.7 V-0.45
DDIOx
3.6 V-100
DDIOx
2.7 V-225
DDIOx
3.6 V-75
DDIOx
2.7 V-150
DDIOx
MHz
ns
DS13560 Rev 197/159
124
Electrical characteristicsSTM32G0B1xB/C/xE
Table 58. I/O AC characteristics
(1)(2)
(continued)
Speed SymbolParameterConditionsMinMaxUnit
C=50 pF, 2.7 V V
FmaxMaximum frequency
C=50 pF, 1.6 V V
C=10 pF, 2.7 V V
01
C=10 pF, 1.6 V V
C=50 pF, 2.7 V V
Tr/TfOutput rise and fall time
C=50 pF, 1.6 V V
C=10 pF, 2.7 V V
C=10 pF, 1.6 V V
C=50 pF, 2.7 V V
FmaxMaximum frequency
C=50 pF, 1.6 V V
C=10 pF, 2.7 V V
10
C=10 pF, 1.6 V V
C=50 pF, 2.7 V V
Tr/TfOutput rise and fall time
C=50 pF, 1.6 V V
C=10 pF, 2.7 V V
C=10 pF, 1.6 V V
C=30 pF, 2.7 V V
FmaxMaximum frequency
C=30 pF, 1.6 V V
C=10 pF, 2.7 V V
11
C=10 pF, 1.6 V V
C=30 pF, 2.7 V V
Tr/TfOutput rise and fall time
C=30 pF, 1.6 V V
C=10 pF, 2.7 V V
C=10 pF, 1.6 V V
Fm+
1. The I/O speed is configured using the OSPEEDRy[1:0] bits. The Fm+ mode is configured in the SYSCFG_CFGR1 register.
Refer to the RM0444 reference manual for a description of GPIO Port configuration register.
2. Guaranteed by design.
3. This value represents the I/O capability but the maximum system frequency is limited to 64 MHz.
4. The fall time is defined between 70% and 30% of the output waveform, according to I
FmaxMaximum frequency
TfOutput fall time
(4)
C=50 pF, 1.6 V V
3.6 V-10
DDIOx
2.7 V-2
DDIOx
3.6 V-15
DDIOx
2.7 V-2.5
DDIOx
3.6 V-30
DDIOx
2.7 V-60
DDIOx
3.6 V-15
DDIOx
2.7 V-30
DDIOx
3.6 V-30
DDIOx
2.7 V-15
DDIOx
3.6 V-60
DDIOx
2.7 V-30
DDIOx
3.6 V-11
DDIOx
2.7 V-22
DDIOx
3.6 V-4
DDIOx
2.7 V-8
DDIOx
3.6 V-60
DDIOx
2.7 V-30
DDIOx
3.6 V-80
DDIOx
2.7 V-40
DDIOx
3.6 V-5.5
DDIOx
2.7 V-11
DDIOx
3.6 V-2.5
DDIOx
2.7 V-5
DDIOx
3.6 V
DDIOx
2
C specification.
MHz
MHz
MHz
(3)
-1MHz
-5ns
ns
ns
ns
98/159DS13560 Rev 1
STM32G0B1xB/C/xEElectrical characteristics
MS32132V2
T
10%
50%
90%
10%
50%
90%
Maximum frequency is achieved if (t + t (≤ 2/3)T and if the duty cycle is (45-55%)
when loaded by the specified capacitance.
r
f
r(IO)out
t
f(IO)out
t
Figure 26. I/O AC characteristics definition
1. Refer to Table 58: I/O AC characteristics.
5.3.15 NRST input characteristics
The NRST input driver uses CMOS technology. It is connected to a permanent
pull-up resistor, R
Unless otherwise specified, the parameters given in the following table are derived from
tests performed under the ambient temperature and supply voltage conditions summarized
in Table 24: General operating conditions.
.
PU
Table 59. NRST pin characteristics
(1)
(1)
SymbolParameterConditionsMinTypMaxUnit
V
IL(NRST)
V
IH(NRST)
V
hys(NRST)
R
PU
V
F(NRST)
V
NF(NRST)
1. Guaranteed by design.
2. The pull-up is designed with a true resistance in series with a switchable PMOS. This PMOS contribution to the series
resistance is minimal (~10% order)
NRST input low level
voltage
NRST input high level
voltage
NRST Schmitt trigger
voltage hysteresis
Weak pull-up
equivalent resistor
NRST input filtered
pulse
NRST input not filtered
pulse
(2)
.
VIN = V
1.7 V V
---0.3 x V
-0.7 x V
DDIO1
--
DDIO1
--200-mV
SS
254055k
---70ns
3.6 V350--ns
DD
V
DS13560 Rev 199/159
124
Electrical characteristicsSTM32G0B1xB/C/xE
MS19878V3
R
PU
V
DD
Internal reset
External
reset circuit
(1)
NRST
(2)
Filter
0.1 μF
Figure 27. Recommended NRST pin protection
1. The reset network protects the device against parasitic resets.
2. The user must ensure that the level on the NRST pin can go below the V
Table 59: NRST pin characteristics. Otherwise the reset will not be taken into account by the device.
3. The external capacitor on NRST must be placed as close as possible to the device.
Unless otherwise specified, the parameters given in Table 61 are preliminary values derived
from tests performed under ambient temperature, f
conditions summarized in Table 24: General operating conditions.
Note:It is recommended to perform a calibration after each power-up.
SymbolParameterConditions
Table 61. ADC characteristics
(2)
frequency and V
PCLK
(1)
MinTypMaxUnit
(1)
supply voltage
DDA
µA
V
DDA
V
REF+
100/159DS13560 Rev 1
Analog supply voltage-1.62-3.6V
Positive reference
voltage
2 V2-V
V
DDA
< 2 VV
V
DDA
DDA
DDA
V
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