Table 30.Typical and maximum current consumption from V
Table 31.Typical and maximum current consumption from the V
Table 32.Typical and maximum V
Table 33.Typical and maximum V
DD
DDA
Table 34.Typical and maximum current consumption from V
Table 35.Typical current consumption in Run mode, code with data processing running from Flash68
Table 36.Typical current consumption in Sleep mode, code running from Flash or RAM. . . . . . . . . 69
This datasheet provides the ordering information and mechanical device characteristics of
the STM32F303xB/STM32F303xC microcontrollers.
This STM32F303xB/STM32F303xC datasheet should be read in conjunction with the
STM32F303x, STM32F358xC and STM32F328x4/6/8 reference manual (RM0316). The
reference manual is available from the STMicroelectronics website www.st.com.
For information on the Arm
•Cortex®-M4 with FPU Technical Reference Manual, available from the
http://www.arm.com website.
•STM32F3xxx and STM32F4xxx Cortex
available from our website www.st.com.
®(a)
Cortex®-M4 core with FPU, refer to:
®
-M4 programming manual (PM0214)
a. Arm is a registered trademark of Arm Limited (or its subsidiaries) in the US and/or elsewhere.
10/149DS9118 Rev 14
STM32F303xB STM32F303xCDescription
2 Description
The STM32F303xB/STM32F303xC family is based on the high-performance Arm® Cortex®M4
32-bit RISC core with FPU operating at a frequency of up to 72 MHz, and embedding a
floating point unit (FPU), a memory protection unit (MPU) and an embedded trace macrocell
(ETM). The family incorporates high-speed embedded memories (up to 256
memory, up to 40
peripherals connected to two APB buses.
The devices offer up to four fast 12-bit ADCs (5 Msps), seven comparators, four operational
amplifiers, up to two DAC channels, a low-power RTC, up to five general-purpose 16-bit
timers, one general-purpose 32-bit timer, and two timers dedicated to motor control. They
also feature standard and advanced communication interfaces: up to two I
SPIs (two SPIs are with multiplexed full-duplex I2Ss), three USARTs, up to two UARTs, CAN
and USB. To achieve audio class accuracy, the I2S peripherals can be clocked via an
external PLL.
The STM32F303xB/STM32F303xC family operates in the -40 to +85 °C and -40 to +105 °C
temperature ranges from a 2.0 to 3.6
mode allows the design of low-power applications.
The STM32F303xB/STM32F303xC family offers devices in four packages ranging from
48
pins to 100 pins.
Kbytes of SRAM) and an extensive range of enhanced I/Os and
V power supply. A comprehensive set of power-saving
Kbytes of Flash
2
Cs, up to three
The set of included peripherals changes with the device chosen.
DS9118 Rev 1411/149
55
DescriptionSTM32F303xB STM32F303xC
Table 2. STM32F303xB/STM32F303xC family device features and peripheral counts
PeripheralSTM32F303CxSTM32F303RxSTM32F303Vx
Flash (Kbytes)128256128256128256
SRAM (Kbytes) on data bus324032403240
CCM (Core Coupled Memory)
RAM (Kbytes)
Advanced
control
8
2 (16-bit)
Timers
General purpose
5 (16-bit)
1 (32-bit)
Basic2 (16-bit)
PWM channels (all)
(1)
PWM channels (except
complementary)
SPI (I2S)
2
C2
I
Communication
interfaces
USART3
UART02
(2)
3133
2224
3(2)
CAN1
USB1
Normal I/Os
(TC, TTa)
2027
45 in LQFP100
37 in WLCSP100
GPIOs
5-volt tolerant
I/Os (FT, FTf)
1725
42 in LQFP100
40 in WLCSP100
DMA channels12
Capacitive sensing channels171824
12-bit ADCs
Number of channels
1522
4
39 in LQFP100
32 in WLCSP100
12-bit DAC channels2
Analog comparator7
Operational amplifiers4
CPU frequency72 MHz
Operating voltage2.0 to 3.6 V
Operating temperature
Ambient operating temperature: - 40 to 85 °C / - 40 to 105 °C
PackagesLQFP48LQFP64
1. This total number considers also the PWMs generated on the complementary output channels
2. The SPI interfaces can work in an exclusive way in either the SPI mode or the I2S audio mode.
12/149DS9118 Rev 14
Junction temperature: - 40 to 125 °C
LQFP100
WLCSP100
STM32F303xB STM32F303xCDescription
MS18960V4
Touch Sensing
Controller
TIMER 16
2 Channels,1 Comp
Channel, BRK as AF
TIMER 17
TIMER 1 / PWM
TIMER 8 / PWM
4 Channels,
4 Comp channels,
ETR, BRK as AF
SPI1
MOSI, MISO,
SCK,NSS as AF
USART1
RX, TX, CTS, RTS,
SmartCard as AF
WinWATCHDOG
BusMatrix
MPU/FPU
Cortex M4 CPU
F
max
: 72 MHz
NVIC
GP DMA1
7 channels
CCM RAM
8KB
Flash
interface
OBL
FLASH 256 KB
64 bits
JTRST
JTDI
JTCK/SWCLK
JTMS/SWDIO
JTDO
As AF
Power
Voltage reg.
3.3 V to 1.8V
V
DD18
Supply
Supervision
POR /PDR
PVD
POR
Reset
Int.
V
DDIO
= 2 to 3.6 V
V
SS
NRESET
V
DDA
V
SSA
Ind. WDG32K
Standby
interface
PLL
@V
DDIO
@V
DDA
XTAL OSC
4 -32 MHz
Reset &
clock
control
AHBPCLK
APBP1CLK
APBP2CLK
AHB2
APB2
AHB2
APB1
CRC
APB1 F
max
= 36 MHz
APB2 f
max
= 72 MHz
GPIO PORT A
GPIO PORT B
GPIO PORT C
GPIO PORT D
GPIO PORT E
OSC_IN
OSC_OUT
SPI3/I2S
SCL, SDA, SMBA as AF
USART2
SCL, SDA, SMBA as AF
USART3
RC LS
TIMER6
TIMER 4
SPI2/I2S
12bit DAC1IF
@V
DDA
TIMER2
(32-bit/PWM)
PA[15:0]
PB[15:0]
PC[15:0]
MOSI/SD, MISO/ext_SD,
SCK/CK, NSS/WS, MCLK as AF
4 Channels, ETR as AF
USB_DP, USB_DM
DAC1_CH1 as AF
HCLK
FCLK
USARTCLK
RC HS 8MHz
SRAM
40 KB
ETM
Trace/Trig
SWJTAG
TPIU
Ibus
TRADECLK
TRACED[0-3]
as AF
Dbus
System
GP DMA2
5 channels
12-bit ADC1
12-bit ADC2
IF
Temp. sensor
V
REF+
V
REF-
TIMER 15
EXT.IT
WKUP
XX AF
1 Channel, 1 Comp
Channel, BRK as AF
1 Channel, 1 Comp
Channel, BRK as AF
4 Channels,
4 Comp channels,
ETR, BRK as AF
GPIO PORT F
PD[15:0]
PE[15:0]
TIMER7
USB SRAM 512B
PF[7:0]
12-bit ADC3
IF
12-bit ADC4
I2CCLK
ADC SAR
1/2/3/4 CLK
@V
DDIO
@V
DDA
@VSW
XTAL 32kHz
OSC32_IN
OSC32_OUT
V
BAT
= 1.65V to 3.6V
RTC
AWU
Backup
Reg
(64Byte)
Backup
interface
ANTI-TAMP
TIMER 3
UART4
UART5
I2C1
I2C2
bx CAN &
512B SRAM
USB 2.0 FS
DAC1_CH2 as AF
OpAmp1
OpAmp2
OpAmp3
OpAmp4
@V
DDA
INxx / OUTxx
INxx / OUTxx
INxx / OUTxx
INxx / OUTxx
INTERFACE
SYSCFG CTL
GP Comparator 7
p
GP Comparator...
GP Comparator 1
CAN TX, CAN RX
4 Channels, ETR as AF
4 Channels, ETR as AF
MOSI/SD, MISO/ext_SD,
SCK/CK, NSS/WS, MCLK as AF
RX, TX, CTS, RTS, as AF
RX, TX, CTS, RTS, as AF
RX, TX as AF
RX, TX as AF
@V
DDA
Xx Ins, 7 OUTs as AF
XX Groups of
4 channels as AF
AHB2
AHB3
Figure 1. STM32F303xB/STM32F303xC block diagram
1. AF: alternate function on I/O pins.
DS9118 Rev 1413/149
55
Functional overviewSTM32F303xB STM32F303xC
3 Functional overview
3.1 Arm® Cortex®-M4 core with FPU with embedded Flash and
SRAM
The Arm Cortex-M4 processor with FPU is the latest generation of Arm processors for
embedded systems. It was developed to provide a low-cost platform that meets the needs of
MCU implementation, with a reduced pin count and low-power consumption, while
delivering outstanding computational performance and an advanced response to interrupts.
The Arm Cortex-M4 32-bit RISC processor with FPU features exceptional code-efficiency,
delivering the high-performance expected from an Arm core in the memory size usually
associated with 8- and 16-bit devices.
The processor supports a set of DSP instructions which allow efficient signal processing and
complex algorithm execution.
Its single precision FPU speeds up software development by using metalanguage
development tools, while avoiding saturation.
With its embedded Arm core, the STM32F303xB/STM32F303xC family is compatible with
all Arm tools and software.
Figure 1 shows the general block diagram of the STM32F303xB/STM32F303xC family
devices.
3.2 Memory protection unit (MPU)
The memory protection unit (MPU) is used to separate the processing of tasks from the data
protection. The MPU can manage up to 8 protection areas that can all be further divided up
into 8 subareas. The protection area sizes are between 32 bytes and the whole 4 gigabytes
of addressable memory.
The memory protection unit is especially helpful for applications where some critical or
certified code has to be protected against the misbehavior of other tasks. It is usually
managed by an RTOS (real-time operating system). If a program accesses a memory
location that is prohibited by the MPU, the RTOS can detect it and take action. In an RTOS
environment, the kernel can dynamically update the MPU area setting, based on the
process to be executed.
The MPU is optional and can be bypassed for applications that do not need it.
3.3 Embedded Flash memory
All STM32F303xB/STM32F303xC devices feature up to 256 Kbytes of embedded Flash
memory available for storing programs and data. The Flash memory access time is adjusted
to the CPU clock frequency (0 wait state from 0 to 24 MHz, 1 wait state from 24 to 48 MHz
and 2 wait states above).
14/149DS9118 Rev 14
STM32F303xB STM32F303xCFunctional overview
3.4 Embedded SRAM
STM32F303xB/STM32F303xC devices feature up to 48 Kbytes of embedded SRAM with
hardware parity check. The memory can be accessed in read/write at CPU clock speed with
0 wait states, allowing the CPU to achieve 90 Dhrystone Mips at 72 MHz (when running
code from the CCM (Core Coupled Memory) RAM).
•8 Kbytes of CCM RAM mapped on both instruction and data bus, used to execute
critical routines or to access data (parity check on all of CCM RAM).
•40 Kbytes of SRAM mapped on the data bus (parity check on first 16 Kbytes of SRAM).
3.5 Boot modes
At startup, Boot0 pin and Boot1 option bit are used to select one of three boot options:
•Boot from user Flash
•Boot from system memory
•Boot from embedded SRAM
The boot loader is located in the system memory. It is used to reprogram the Flash memory
by using USART1 (PA9/PA10), USART2 (PD5/PD6) or USB (PA11/PA12) through DFU
(device firmware upgrade).
3.6 Cyclic redundancy check (CRC)
The CRC (cyclic redundancy check) calculation unit is used to get a CRC code using a
configurable generator polynomial value and size.
Among other applications, CRC-based techniques are used to verify data transmission or
storage integrity. In the scope of the EN/IEC 60335-1 standard, they offer a means of
verifying the Flash memory integrity. The CRC calculation unit helps compute a signature of
the software during runtime, to be compared with a reference signature generated at
linktime and stored at a given memory location.
DS9118 Rev 1415/149
55
Functional overviewSTM32F303xB STM32F303xC
3.7 Power management
3.7.1 Power supply schemes
•VSS, V
=2.0 to 3.6 V: external power supply for I/Os and the internal regulator. It is
DD
provided externally through V
•V
SSA
, V
= 2.0 to 3.6 V: external analog power supply for ADC, DACs, comparators
DDA
operational amplifiers, reset blocks, RCs and PLL. The minimum voltage to be applied
to V
the V
greater or equal to the V
•V
differs from one analog peripheral to another. Ta ble 3 provides the summary of
DDA
ranges for analog peripherals. The V
DDA
= 1.65 to 3.6 V: power supply for RTC, external clock 32 kHz oscillator and
BAT
voltage level and must be provided first.
DD
backup registers (through power switch) when V
Table 3. External analog supply values for analog peripherals
Analog peripheralMinimum V
ADC / COMP2.0 V3.6 V
DAC / OPAMP2.4 V3.6V
3.7.2 Power supply supervision
The device has an integrated power-on reset (POR) and power-down reset (PDR) circuits.
They are always active, and ensure proper operation above a threshold of 2 V. The device
remains in reset mode when the monitored supply voltage
V
POR/PDR, without the need for an external reset circuit.
•The POR monitors only the VDD supply voltage. During the startup phase it is required
that V
•The PDR monitors both the V
supply supervisor can be disabled (by programming a dedicated Option bit) to reduce
the power consumption if the application design ensures that V
equal to V
The device features an embedded programmable voltage detector (PVD) that monitors the
V
power supply and compares it to the VPVD threshold. An interrupt can be generated
DD
when V
DD
threshold. The interrupt service routine can then generate a warning message and/or put
the MCU into a safe state. The PVD is enabled by software.
should arrive first and be greater than or equal to VDD.
DDA
.
DD
drops below the V
PVD
pins.
DD
voltage level must be always
DDA
is not present.
DD
supplyMaximum V
DDA
is below a specified threshold,
and V
DD
threshold and/or when VDD is higher than the V
supply voltages, however the V
DDA
DDA
DDA
is higher than or
supply
DDA
PVD
power
3.7.3 Voltage regulator
The regulator has three operation modes: main (MR), low-power (LPR), and power-down.
•The MR mode is used in the nominal regulation mode (Run)
•The LPR mode is used in Stop mode.
•The power-down mode is used in Standby mode: the regulator output is in high
impedance, and the kernel circuitry is powered down thus inducing zero consumption.
The voltage regulator is always enabled after reset. It is disabled in Standby mode.
16/149DS9118 Rev 14
STM32F303xB STM32F303xCFunctional overview
3.7.4 Low-power modes
The STM32F303xB/STM32F303xC supports three low-power modes to achieve the best
compromise between low-power consumption, short startup time and available wakeup
sources:
•Sleep mode
In Sleep mode, only the CPU is stopped. All peripherals continue to operate and can
wake up the CPU when an interrupt/event occurs.
•Stop mode
Stop mode achieves the lowest power consumption while retaining the content of
SRAM and registers. All clocks in the 1.8 V domain are stopped, the PLL, the HSI RC
and the HSE crystal oscillators are disabled. The voltage regulator can also be put
either in normal or in low-power mode.
The device can be woken up from Stop mode by any of the EXTI line. The EXTI line
source can be one of the 16 external lines, the PVD output, the USB wakeup, the RTC
alarm, COMPx, I2Cx or U(S)ARTx.
•Standby mode
The Standby mode is used to achieve the lowest power consumption. The internal
voltage regulator is switched off so that the entire 1.8 V domain is powered off. The
PLL, the HSI RC and the HSE crystal oscillators are also switched off. After entering
Standby mode, SRAM and register contents are lost except for registers in the Backup
domain and Standby circuitry.
The device exits Standby mode when an external reset (NRST pin), an IWDG reset, a
rising edge on the WKUP pin or an RTC alarm occurs.
Note:The RTC, the IWDG and the corresponding clock sources are not stopped by entering Stop
or Standby mode.
3.8 Interconnect matrix
Several peripherals have direct connections between them. This allows autonomous
communication between peripherals, saving CPU resources thus power supply
consumption. In addition, these hardware connections allow fast and predictable latency.
Clock source used as input channel for HSI and
LSI calibration
Timer break
Conversion external trigger
Interconnect action
Note:For more details about the interconnect actions, please refer to the corresponding sections
in the reference manual (RM0316).
3.9 Clocks and startup
System clock selection is performed on startup, however the internal RC 8 MHz oscillator is
selected as default CPU clock on reset. An external 4-32
MHz clock can be selected, in
which case it is monitored for failure. If failure is detected, the system automatically switches
back to the internal RC oscillator. A software interrupt is generated if enabled. Similarly, full
interrupt management of the PLL clock entry is available when necessary (for example with
failure of an indirectly used external oscillator).
Several prescalers allow to configure the AHB frequency, the high speed APB (APB2) and
the low speed APB (APB1) domains. The maximum frequency of the AHB and the high
speed APB domains is 72
APB domain is 36
MHz.
MHz, while the maximum allowed frequency of the low speed
18/149DS9118 Rev 14
STM32F303xB STM32F303xCFunctional overview
/32
4-32 MHz
HSE OSC
OSC_IN
OSC_OUT
OSC32_IN
OSC32_OUT
8 MHz
HSI RC
IWDGCLK
to IWDG
PLL
x2,x3,..
x16
PLLMUL
AHB
APB1
prescaler
/1,2,4,8,16
HCLK
PLLCLK
to AHB bus, core,
memory and DMA
LSE
LSI
HSI
HSI
HSE
to RTC
PLLSRC
SW
/8
SYSCLK
RTCCLK
RTCSEL[1:0]
to TIM 2,3,4,6,7
If (APB1 prescaler
=1) x1 else x2
FLITFCLK
to Flash programming interface
to I2Cx (x = 1,2)
to U(S)ARTx (x = 2..5)
LSE
HSI
SYSCLK
/2
PCLK1
SYSCLK
HSI
PCLK1
MS19989V5
to I2Sx (x = 2,3)
USBCLK
to USB interface
to cortex System timer
FHCLK Cortex free
running clock
to APB1 peripherals
AHB
prescaler
/1,2,..512
CSS
/2,/3,...
/16
LSE OSC
32.768kHz
LSI RC
40kHz
USB
prescaler
/1,1.5
APB2
prescaler
/1,2,4,8,16
to TIM 15,16,17
If (APB2 prescaler
=1) x1 else x2
to USART1
LSE
HSI
SYSCLK
PCLK2
PCLK2
to APB2 peripherals
TIM1/8
ADC
Prescaler
/1,2,4
to ADCxy
(xy = 12, 34)
ADC
Prescaler
/1,2,4,6,8,10,12,16,
32,64,128,256
I2SSRC
SYSCLK
Ext. clock
I2S_CKIN
x2
MCO
Main clock
output
/2
PLLCLK
HSI
HSE
MCO
SYSCLK
LSI
Figure 2. Clock tree
DS9118 Rev 1419/149
55
Functional overviewSTM32F303xB STM32F303xC
3.10 General-purpose input/outputs (GPIOs)
Each of the GPIO pins can be configured by software as output (push-pull or open-drain), as
input (with or without pull-up or pull-down) or as peripheral alternate function. Most of the
GPIO pins are shared with digital or analog alternate functions. All GPIOs are high current
capable except for analog inputs.
The I/Os alternate function configuration can be locked if needed following a specific
sequence in order to avoid spurious writing to the I/Os registers.
Fast I/O handling allows I/O toggling up to 36 MHz.
3.11 Direct memory access (DMA)
The flexible general-purpose DMA is able to manage memory-to-memory, peripheral-tomemory and memory-to-peripheral transfers. The DMA controller supports circular buffer
management, avoiding the generation of interrupts when the controller reaches the end of
the buffer.
Each of the 12 DMA channels is connected to dedicated hardware DMA requests, with
software trigger support for each channel. Configuration is done by software and transfer
sizes between source and destination are independent.
The DMA can be used with the main peripherals: SPI, I2C, USART, general-purpose timers,
DAC and ADC.
The STM32F303xB/STM32F303xC devices embed a nested vectored interrupt controller
(NVIC) able to handle up to 66 maskable interrupt channels and 16 priority levels.
•Interrupt entry vector table address passed directly to the core
•Closely coupled NVIC core interface
•Allows early processing of interrupts
•Processing of late arriving higher priority interrupts
•Support for tail chaining
•Processor state automatically saved
•Interrupt entry restored on interrupt exit with no instruction overhead
The NVIC hardware block provides flexible interrupt management features with minimal
interrupt latency.
20/149DS9118 Rev 14
STM32F303xB STM32F303xCFunctional overview
3.13 Fast analog-to-digital converter (ADC)
four fast analog-to-digital converters 5 MSPS, with selectable resolution between 12 and 6
bit, are embedded in the STM32F303xB/STM32F303xC family devices. The ADCs have up
to 39 external channels. Some of the external channels are shared between ADC1&2 and
between ADC3&4. Channels can be configured to be either single-ended input or differential
input. The ADCs can perform conversions in single-shot or scan modes. In scan mode,
automatic conversion is performed on a selected group of analog inputs.
The ADCs have also internal channels: Temperature sensor connected to ADC1 channel
16, V
ADCs channel 18, VOPAMP1 connected to ADC1 channel 15, VOPAMP2 connected to
ADC2 channel 17, VREFOPAMP3 connected to ADC3 channel 17 and VREFOPAMP4
connected to ADC4 channel 17.
Additional logic functions embedded in the ADC interface allow:
•Simultaneous sample and hold
•Interleaved sample and hold
•Single-shunt phase current reading techniques.
The ADC can be served by the DMA controller. 3 analog watchdogs per ADC are available.
An analog watchdog feature allows very precise monitoring of the converted voltage of one,
some or all selected channels. An interrupt is generated when the converted voltage is
outside the programmed thresholds.
connected to ADC1 channel 17, Voltage reference V
BAT/2
connected to the 4
REFINT
The events generated by the general-purpose timers and the advanced-control timers
(TIM1 and TIM8) can be internally connected to the ADC start trigger and injection trigger,
respectively, to allow the application to synchronize A/D conversion and timers.
3.13.1 Temperature sensor
The temperature sensor (TS) generates a voltage V
temperature.
The temperature sensor is internally connected to the ADC1_IN16 input channel which is
used to convert the sensor output voltage into a digital value.
The sensor provides good linearity but it has to be calibrated to obtain good overall
accuracy of the temperature measurement. As the offset of the temperature sensor varies
from chip to chip due to process variation, the uncalibrated internal temperature sensor is
suitable for applications that detect temperature changes only.
To improve the accuracy of the temperature sensor measurement, each device is
individually factory-calibrated by ST. The temperature sensor factory calibration data are
stored by ST in the system memory area, accessible in read-only mode.
3.13.2 Internal voltage reference (V
The internal voltage reference (V
ADC and Comparators. V
REFINT
channel. The precise voltage of V
production test and stored in the system memory area. It is accessible in read-only mode.
REFINT
is internally connected to the ADCx_IN18, x=1...4 input
REFINT
that varies linearly with
SENSE
REFINT
)
) provides a stable (bandgap) voltage output for the
is individually measured for each part by ST during
DS9118 Rev 1421/149
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Functional overviewSTM32F303xB STM32F303xC
3.13.3 V
battery voltage monitoring
BAT
This embedded hardware feature allows the application to measure the V
using the internal ADC channel ADC1_IN17. As the V
and thus outside the ADC input range, the V
divider by 2. As a consequence, the converted digital value is half the V
pin is internally connected to a bridge
BAT
3.13.4 OPAMP reference voltage (VREFOPAMP)
Every OPAMP reference voltage can be measured using a corresponding ADC internal
channel: VREFOPAMP1 connected to ADC1 channel 15, VREFOPAMP2 connected to
ADC2 channel 17, VREFOPAMP3 connected to ADC3 channel 17, VREFOPAMP4
connected to ADC4 channel 17.
3.14 Digital-to-analog converter (DAC)
Two 12-bit buffered DAC channels can be used to convert digital signals into analog voltage
signal outputs. The chosen design structure is composed of integrated resistor strings and
an amplifier in inverting configuration.
This digital interface supports the following features:
•Two DAC output channels
•8-bit or 10-bit monotonic output
•Left or right data alignment in 12-bit mode
•Synchronized update capability
•Noise-wave generation
•Triangular-wave generation
•Dual DAC channel independent or simultaneous conversions
•DMA capability (for each channel)
•External triggers for conversion
battery voltage
voltage may be higher than V
BAT
BAT
BAT
voltage.
DDA
,
3.15 Operational amplifier (OPAMP)
The STM32F303xB/STM32F303xC embeds four operational amplifiers with external or
internal follower routing and PGA capability (or even amplifier and filter capability with
external components). When an operational amplifier is selected, an external ADC channel
is used to enable output measurement.
The operational amplifier features:
•8.2 MHz bandwidth
•0.5 mA output capability
•Rail-to-rail input/output
•In PGA mode, the gain can be programmed to be 2, 4, 8 or 16.
22/149DS9118 Rev 14
STM32F303xB STM32F303xCFunctional overview
3.16 Fast comparators (COMP)
The STM32F303xB/STM32F303xC devices embed seven fast rail-to-rail comparators with
programmable reference voltage (internal or external), hysteresis and speed (low speed for
low-power) and with selectable output polarity.
The reference voltage can be one of the following:
•External I/O
•DAC output pin
•Internal reference voltage or submultiple (1/4, 1/2, 3/4). Refer to Table 28: Embedded
internal reference voltage on page 63 for the value and precision of the internal
reference voltage.
All comparators can wake up from STOP mode, generate interrupts and breaks for the
timers and can be also combined per pair into a window comparator
3.17 Timers and watchdogs
The STM32F303xB/STM32F303xC includes two advanced control timers, up to six generalpurpose timers, two basic timers, two watchdog timers and a SysTick timer. The table below
compares the features of the advanced control, general purpose and basic timers.
Table 5. Timer feature comparison
Timer typeTimer
Advanced
General-
purpose
General-
purpose
General-
purpose
General-
purpose
Basic
TIM1,
TIM8
TIM232-bit
TIM3, TIM416-bit
TIM1516-bitUp
TIM16, TIM1716-bitUp
TIM6,
TIM7
Counter
resolution
16-bit
16-bitUp
Counter
type
Up, Down,
Up/Down
Up, Down,
Up/Down
Up, Down,
Up/Down
Prescaler
factor
Any integer
between 1
and 65536
Any integer
between 1
and 65536
Any integer
between 1
and 65536
Any integer
between 1
and 65536
Any integer
between 1
and 65536
Any integer
between 1
and 65536
DMA
request
generation
Yes4Yes
Yes4No
Yes4No
Yes21
Yes11
Yes0No
Capture/
compare
Channels
Complementary
outputs
Note:TIM1/8 can have PLL as clock source, and therefore can be clocked at 144 MHz.
DS9118 Rev 1423/149
55
Functional overviewSTM32F303xB STM32F303xC
3.17.1 Advanced timers (TIM1, TIM8)
The advanced-control timers (TIM1 and TIM8) can each be seen as a three-phase PWM
multiplexed on six channels. They have complementary PWM outputs with programmable
inserted dead-times. They can also be seen as complete general-purpose timers. The four
independent channels can be used for:
•Input capture
•Output compare
•PWM generation (edge or center-aligned modes) with full modulation capability (0-
100%)
•One-pulse mode output
In debug mode, the advanced-control timer counter can be frozen and the PWM outputs
disabled to turn off any power switches driven by these outputs.
Many features are shared with those of the general-purpose TIM timers (described in
Section 3.17.2 using the same architecture, so the advanced-control timers can work
together with the TIM timers via the Timer Link feature for synchronization or event chaining.
There are up to six synchronizable general-purpose timers embedded in the
STM32F303xB/STM32F303xC (see
can be used to generate PWM outputs, or act as a simple time base.
•TIM2, 3, and TIM4
These are full-featured general-purpose timers:
–TIM2 has a 32-bit auto-reload up/downcounter and 32-bit prescaler
–TIM3 and 4 have 16-bit auto-reload up/downcounters and 16-bit prescalers.
These timers all feature 4 independent channels for input capture/output compare,
PWM or one-pulse mode output. They can work together, or with the other generalpurpose timers via the Timer Link feature for synchronization or event chaining.
The counters can be frozen in debug mode.
All have independent DMA request generation and support quadrature encoders.
•TIM15, 16 and 17
These three timers general-purpose timers with mid-range features:
They have 16-bit auto-reload upcounters and 16-bit prescalers.
–TIM15 has 2 channels and 1 complementary channel
–TIM16 and TIM17 have 1 channel and 1 complementary channel
All channels can be used for input capture/output compare, PWM or one-pulse mode
output.
The timers can work together via the Timer Link feature for synchronization or event
chaining. The timers have independent DMA request generation.
The counters can be frozen in debug mode.
Tab l e 5 for differences). Each general-purpose timer
3.17.3 Basic timers (TIM6, TIM7)
These timers are mainly used for DAC trigger generation. They can also be used as a
generic 16-bit time base.
24/149DS9118 Rev 14
STM32F303xB STM32F303xCFunctional overview
3.17.4 Independent watchdog (IWDG)
The independent watchdog is based on a 12-bit downcounter and 8-bit prescaler. It is
clocked from an independent 40 kHz internal RC and as it operates independently from the
main clock, it can operate in Stop and Standby modes. It can be used either as a watchdog
to reset the device when a problem occurs, or as a free running timer for application timeout
management. It is hardware or software configurable through the option bytes. The counter
can be frozen in debug mode.
3.17.5 Window watchdog (WWDG)
The window watchdog is based on a 7-bit downcounter that can be set as free running. It
can be used as a watchdog to reset the device when a problem occurs. It is clocked from
the main clock. It has an early warning interrupt capability and the counter can be frozen in
debug mode.
3.17.6 SysTick timer
This timer is dedicated to real-time operating systems, but could also be used as a standard
down counter. It features:
•A 24-bit down counter
•Autoreload capability
•Maskable system interrupt generation when the counter reaches 0.
•Programmable clock source
3.18 Real-time clock (RTC) and backup registers
The RTC and the 16 backup registers are supplied through a switch that takes power from
either the V
registers used to store 64 bytes of user application data when V
They are not reset by a system or power reset, or when the device wakes up from Standby
mode.
The RTC is an independent BCD timer/counter.It supports the following features:
•Calendar with subsecond, seconds, minutes, hours (12 or 24 format), week day, date,
month, year, in BCD (binary-coded decimal) format.
•Reference clock detection: a more precise second source clock (50 or 60 Hz) can be
used to enhance the calendar precision.
•Automatic correction for 28, 29 (leap year), 30 and 31 days of the month.
•Two programmable alarms with wake up from Stop and Standby mode capability.
•On-the-fly correction from 1 to 32767 RTC clock pulses. This can be used to
synchronize it with a master clock.
•Digital calibration circuit with 1 ppm resolution, to compensate for quartz crystal
inaccuracy.
•Three anti-tamper detection pins with programmable filter. The MCU can be woken up
from Stopand Standby modes on tamper event detection.
•Timestamp feature which can be used to save the calendar content. This function can
be triggered by an event on the timestamp pin, or by a tamper event. The MCU can be
woken up from Stop and Standby modes on timestamp event detection.
supply when present or the V
DD
pin. The backup registers are sixteen 32-bit
BAT
power is not present.
DD
DS9118 Rev 1425/149
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Functional overviewSTM32F303xB STM32F303xC
•17-bit Auto-reload counter for periodic interrupt with wakeup from STOP/STANDBY
capability.
The RTC clock sources can be:
•A 32.768 kHz external crystal
•A resonator or oscillator
•The internal low-power RC oscillator (typical frequency of 40 kHz)
•The high-speed external clock divided by 32.
3.19 Inter-integrated circuit interface (I2C)
Up to two I2C bus interfaces can operate in multimaster and slave modes. They can support
standard (up to 100
Both support 7-bit and 10-bit addressing modes, multiple 7-bit slave addresses
(2
addresses, 1 with configurable mask). They also include programmable analog and
digital noise filters.
KHz), fast (up to 400 KHz) and fast mode + (up to 1 MHz) modes.
Table 6. Comparison of I2C analog and digital filters
Analog filterDigital filter
Pulse width of
suppressed spikes
BenefitsAvailable in Stop mode
Drawbacks
50 ns
Variations depending on
temperature, voltage, process
Programmable length from 1 to 15
I2C peripheral clocks
1. Extra filtering capability vs.
standard requirements.
2. Stable length
Wakeup from Stop on address
match is not available when digital
filter is enabled.
In addition, they provide hardware support for SMBUS 2.0 and PMBUS 1.1: ARP capability,
Host notify protocol, hardware CRC (PEC) generation/verification, timeouts verifications and
ALERT protocol management. They also have a clock domain independent from the CPU
clock, allowing the I2Cx (x=1,2) to wake up the MCU from Stop mode on address match.
The I2C interfaces can be served by the DMA controller.
Refer to Tab le 7 for the features available in I2C1 and I2C2.
7-bit addressing modeXX
10-bit addressing modeXX
Standard mode (up to 100 kbit/s)XX
Fast mode (up to 400 kbit/s)XX
Fast Mode Plus with 20mA output drive I/Os (up to 1 Mbit/s)XX
The STM32F303xB/STM32F303xC devices have three embedded universal
synchronous/asynchronous receiver transmitters (USART1, USART2 and USART3).
The USART interfaces are able to communicate at speeds of up to 9 Mbits/s.
They provide hardware management of the CTS and RTS signals, they support IrDA SIR
ENDEC, the multiprocessor communication mode, the single-wire half-duplex
communication mode and have LIN Master/Slave capability. The USART interfaces can be
served by the DMA controller.
The STM32F303xB/STM32F303xC devices have 2 embedded universal asynchronous
receiver transmitters (UART4, and UART5). The UART interfaces support IrDA SIR
ENDEC, multiprocessor communication mode and single-wire half-duplex communication
mode. The UART4 interface can be served by the DMA controller.
Refer to Tab le 8 for the features available in all U(S)ART interfaces.
Table 8. USART features
USART modes/features
Hardware flow control for modemXXX--
Continuous communication using DMAXXXX-
Multiprocessor communicationXXXXX
Synchronous modeXXX--
Smartcard modeXXX--
Single-wire half-duplex communicationXXXXX
IrDA SIR ENDEC blockXXXXX
LIN modeXXXXX
Dual clock domain and wakeup from Stop modeXXXXX
Receiver timeout interruptXXXXX
Modbus communicationXXXXX
Auto baud rate detectionXXX--
(1)
USART1USART2USART3UART4UART5
Driver EnableXXX--
1. X = supported.
DS9118 Rev 1427/149
55
Functional overviewSTM32F303xB STM32F303xC
3.22 Serial peripheral interface (SPI)/Inter-integrated sound
interfaces (I2S)
Up to three SPIs are able to communicate up to 18 Mbits/s in slave and master modes in
full-duplex and half-duplex communication modes. The 3-bit prescaler gives 8 master mode
frequencies and the frame size is configurable from 4 bits to 16 bits.
Two standard I2S interfaces (multiplexed with SPI2 and SPI3) supporting four different
audio standards can operate as master or slave at half-duplex and full duplex
communication modes. They can be configured to transfer 16 and 24 or 32 bits with 16-bit
or 32-bit data resolution and synchronized by a specific signal. Audio sampling frequency
from 8 kHz up to 192 kHz can be set by 8-bit programmable linear prescaler. When
operating in master mode it can output a clock for an external audio component at 256 times
the sampling frequency.
Refer to Tab le 9 for the features available in SPI1, SPI2 and SPI3.
The CAN is compliant with specifications 2.0A and B (active) with a bit rate up to 1 Mbit/s. It
can receive and transmit standard frames with 11-bit identifiers as well as extended frames
with 29-bit identifiers. It has three transmit mailboxes, two receive FIFOs with 3 stages and
14 scalable filter banks.
3.24 Universal serial bus (USB)
The STM32F303xB/STM32F303xC devices embed an USB device peripheral compatible
with the USB full-speed 12 Mbs. The USB interface implements a full-speed (12 Mbit/s)
function interface. It has software-configurable endpoint setting and suspend/resume
support. The dedicated 48 MHz clock is generated from the internal main PLL (the clock
source must use a HSE crystal oscillator). The USB has a dedicated 512-bytes SRAM
memory for data transmission and reception.
28/149DS9118 Rev 14
STM32F303xB STM32F303xCFunctional overview
MSv30365V1
TIMER 16
(for envelop)
TIMER 17
(for carrier)
OC
OC
PB9/PA13
3.25 Infrared Transmitter
The STM32F303xB/STM32F303xC devices provide an infrared transmitter solution. The
solution is based on internal connections between TIM16 and TIM17 as shown in the figure
below.
TIM17 is used to provide the carrier frequency and TIM16 provides the main signal to be
sent. The infrared output signal is available on PB9 or PA13.
To generate the infrared remote control signals, TIM16 channel 1 and TIM17 channel 1 must
be properly configured to generate correct waveforms. All standard IR pulse modulation
modes can be obtained by programming the two timers output compare channels.
Figure 3. Infrared transmitter
3.26 Touch sensing controller (TSC)
The STM32F303xB/STM32F303xC devices provide a simple solution for adding capacitive
sensing functionality to any application. These devices offer up to 24 capacitive sensing
channels distributed over 8 analog I/O groups.
Capacitive sensing technology is able to detect the presence of a finger near a sensor which
is protected from direct touch by a dielectric (glass, plastic, ...). The capacitive variation
introduced by the finger (or any conductive object) is measured using a proven
implementation based on a surface charge transfer acquisition principle. It consists of
charging the sensor capacitance and then transferring a part of the accumulated charges
into a sampling capacitor until the voltage across this capacitor has reached a specific
threshold. To limit the CPU bandwidth usage this acquisition is directly managed by the
hardware touch sensing controller and only requires few external components to operate.
The touch sensing controller is fully supported by the STMTouch touch sensing firmware
library which is free to use and allows touch sensing functionality to be implemented reliably
in the end application.
DS9118 Rev 1429/149
55
Functional overviewSTM32F303xB STM32F303xC
Table 10. Capacitive sensing GPIOs available on STM32F303xB/STM32F303xC
devices
Group
1
2
3
4
Capacitive sensing
signal name
TSC_G1_IO1PA0
Pin
name
Group
Capacitive sensing
signal name
TSC_G5_IO1PB3
TSC_G1_IO2PA1TSC_G5_IO2PB4
5
TSC_G1_IO3PA2TSC_G5_IO3PB6
TSC_G1_IO4PA3TSC_G5_IO4PB7
TSC_G2_IO1PA4
TSC_G6_IO1PB11
TSC_G2_IO2PA5TSC_G6_IO2PB12
6
TSC_G2_IO3PA6TSC_G6_IO3PB13
TSC_G2_IO4PA7TSC_G6_IO4PB14
TSC_G3_IO1PC5
TSC_G7_IO1PE2
TSC_G3_IO2PB0TSC_G7_IO2PE3
7
TSC_G3_IO3PB1TSC_G7_IO3PE4
TSC_G3_IO4PB2TSC_G7_IO4PE5
TSC_G4_IO1PA9
TSC_G8_IO1PD12
TSC_G4_IO2PA10TSC_G8_IO2PD13
8
TSC_G4_IO3PA13TSC_G8_IO3PD14
TSC_G4_IO4PA14TSC_G8_IO4PD15
Table 11. No. of capacitive sensing channels available on
STM32F303xB/STM32F303xC devices
Pin
name
Number of capacitive sensing channels
Analog I/O group
STM32F303VxSTM32F303RxSTM32F303Cx
G1333
G2333
G3332
G4333
G5333
G6333
G7300
G8300
Number of capacitive
sensing channels
241817
30/149DS9118 Rev 14
STM32F303xB STM32F303xCFunctional overview
3.27 Development support
3.27.1 Serial wire JTAG debug port (SWJ-DP)
The Arm SWJ-DP Interface is embedded, and is a combined JTAG and serial wire debug
port that enables either a serial wire debug or a JTAG probe to be connected to the target.
The JTAG TMS and TCK pins are shared respectively with SWDIO and SWCLK and a
specific sequence on the TMS pin is used to switch between JTAG-DP and SW-DP.
3.27.2 Embedded trace macrocell™
The Armembedded trace macrocell provides a greater visibility of the instruction and data
flow inside the CPU core by streaming compressed data at a very high rate from the
STM32F303xB/STM32F303xC through a small number of ETM pins to an external
hardware trace port analyzer (TPA) device. The TPA is connected to a host computer using
a high-speed channel. Real-time instruction and data flow activity can be recorded and then
formatted for display on the host computer running debugger software. TPA hardware is
commercially available from common development tool vendors. It operates with third party
debugger software tools.
DS9118 Rev 1431/149
55
Pinouts and pin descriptionSTM32F303xB STM32F303xC
MSv40448V1
47 46 45 44 43 42 41
VSS
BOOT0
PB5
40 39 38 37
36
35
34
33
32
31
30
29
28
27
26
25
21 22 23 24
PB4
PB3
VDD
VSS
PA12
PB15
PB14
PB13
PB12
PB10
VSS
PB11
VDD
48
13
2
3
4
5
6
7
8
9
10
11
VBAT
PC14/OSC32_IN
PC15/OSC32_OUT
NRST
VSSA/VREF-
VDDA
PA0
PA1
PA2
VDD
PF0/OSC_IN
PF1/OSC_OUT
PC13
12
1
14 15 16 17 18 19 20
PA7
PB1
PB2
LQFP48
PA13
PA11
PA10
PA9
PA8
PA3
PA4
PA5
PA6
PB0
PB9
PB8
PB7
PB6
PA15
PA14
4 Pinouts and pin description
Figure 4. STM32F303xB/STM32F303xC LQFP48 pinout
32/149DS9118 Rev 14
STM32F303xB STM32F303xCPinouts and pin description
64 63 62 61 60 59 58 57 56 55 54 53 52 51 50 49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
17 18 19 20 21 22 23 2429 30 31 3225 26 27 28
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
VBAT
PC14/OSC32_IN
PC15/OSC32_OUT
NRST
PC0
PC1
PC2
PC3
VSSA/VREF-
VDDA
PA0
PA1
PA2
VDD
PD2
PC12
PC11
PC10
VDD
VSS
PC8
PC7
PC6
PB12
PF4
PA3
VDD
PC4
PC5
PB2
PB10
PF1/OSC_OUT
PF0/OSC_IN
PC13
VSS
PB11
VSS
VDD
LQFP64
MS40449V2
PA13
PA12
PA11
PA10
PA9
PA8
PC9
PB15
PB14
PB13
PA4
PA5
PA6
PA7
PB0
PB1
PB9
PB8
BOOT0
PB7
PB6
PB5
PB4
PB3
PA15
PA14
Figure 5. STM32F303xB/STM32F303xC LQFP64 pinout
DS9118 Rev 1433/149
55
Pinouts and pin descriptionSTM32F303xB STM32F303xC
Pinouts and pin descriptionSTM32F303xB STM32F303xC
1. Function availability depends on the chosen device.
When using the small packages (48 and 64 pin packages), the GPIO pins which are not present on these packages, must
not be configured in analog mode.
2. PC13, PC14 and PC15 are supplied through the power switch. Since the switch sinks only a limited amount of current
(3 mA), the use of GPIO PC13 to PC15 in output mode is limited:
- The speed should not exceed 2 MHz with a maximum load of 30 pF
- These GPIOs must not be used as current sources (e.g. to drive an LED).
After the first backup domain power-up, PC13, PC14 and PC15 operate as GPIOs. Their function then depends on the
content of the Backup registers which is not reset by the main reset. For details on how to manage these GPIOs, refer to
the Battery backup domain and BKP register description sections in the RM0316 reference manual.
3. The VREF+ functionality is available only on the 100 pin package. On the 64-pin and 48-pin packages, the VREF+ is
internally connected to VDDA.
4. Fast ADC channel.
5. These GPIOs offer a reduced touch sensing sensitivity. It is thus recommended to use them as sampling capacitor I/O.
44/149DS9118 Rev 14
Port
&
Pin
Name
STM32F303xB STM32F303xCPinouts and pin description
1. The gray color is used for reserved Flash memory addresses.
DS9118 Rev 1455/149
55
Electrical characteristicsSTM32F303xB STM32F303xC
MS19210V1
MCU pin
C = 50 pF
MS19211V1
MCU pin
V
IN
6 Electrical characteristics
6.1 Parameter conditions
Unless otherwise specified, all voltages are referenced to VSS.
6.1.1 Minimum and maximum values
Unless otherwise specified, the minimum and maximum values are guaranteed in the worst
conditions of ambient temperature, supply voltage and frequencies by tests in production on
100% of the devices with an ambient temperature at T
the selected temperature range).
Data based on characterization results, design simulation and/or technology characteristics
are indicated in the table footnotes. Based on characterization, the minimum and maximum
values refer to sample tests and represent the mean value plus or minus three times the
standard deviation (mean±3
6.1.2 Typical values
σ).
= 25 °C and TA = TAmax (given by
A
Unless otherwise specified, typical data are based on TA = 25 °C, V
are given only as design guidelines and are not tested.
Typical ADC accuracy values are determined by characterization of a batch of samples from
a standard diffusion lot over the full temperature range, where 95% of the devices have an
error less than or equal to the value indicated
6.1.3 Typical curves
Unless otherwise specified, all typical curves are given only as design guidelines and are
not tested.
6.1.4 Loading capacitor
The loading conditions used for pin parameter measurement are shown in Figure 9.
6.1.5 Pin input voltage
The input voltage measurement on a pin of the device is described in Figure 10.
Figure 9. Pin loading conditionsFigure 10. Pin input voltage
(mean±2σ).
DD
= V
= 3.3 V. They
DDA
56/149DS9118 Rev 14
STM32F303xB STM32F303xCElectrical characteristics
MS19875V5
Level shifter
Analog: RCs,
PLL,comparators, OPAMP,
....
Power
switch
ADC/DAC
Kernel logic
(CPU,
digital
& memories)
I/O logic
Backup circuitry
(LSE, RTC,
Wakeup logic,
Backup registers)
V
BAT
1.65 – 3.6 V
GP I/Os
V
DD
OUT
IN
Regulator
4 x V
DD
4 x V
SS
V
DDA
V
DDA
V
REF+
V
REF-
V
SSA
4 x 100 nF
+ 1 x 4.7 μF
10 nF
+ 1 μF
6.1.6 Power supply scheme
Figure 11. Power supply scheme
1. Dotted lines represent the internal connections on low pin count packages, joining the dedicated supply
pins.
Caution:Each power supply pair (VDD/VSS, V
ceramic capacitors as shown above. These capacitors must be placed as close as possible
to, or below the appropriate pins on the underside of the PCB to ensure the good
functionality of the device.
DS9118 Rev 1457/149
DDA/VSSA
etc..) must be decoupled with filtering
125
Electrical characteristicsSTM32F303xB STM32F303xC
MS19213V1
V
BAT
V
DD
V
DDA
I
DD
I
DDA
I
DD_VBAT
6.1.7 Current consumption measurement
Figure 12. Current consumption measurement scheme
6.2 Absolute maximum ratings
Stresses above the absolute maximum ratings listed in Tab le 21: Voltage characteristics,
Tab l e 22: Current characteristics, and Tab le 23: Thermal characteristics may cause
permanent damage to the device. These are stress ratings only and functional operation of
the device at these conditions is not implied. Exposure to maximum rating conditions for
extended periods may affect device reliability.
Table 21. Voltage characteristics
SymbolRatingsMinMaxUnit
V
DD–VSS
V
DD–VDDA
V
REF+–VDDA
External main supply voltage (including V
and VDD)
Allowed voltage difference for VDD > V
(2)
Allowed voltage difference for V
REF+
DDA, VBAT
-0.4
DDA
> V
DDA
Input voltage on FT and FTf pinsV
(3)
V
IN
Input voltage on TTa pinsV
Input voltage on any other pinV
Input voltage on Boot0 pin09
|ΔV
|Variations between different V
DDx
− VSS|Variations between all the different ground pins
|V
SSX
V
ESD(HBM)
1. All main power (VDD, V
permitted range. The following relationship must be respected between V
must power on before or at the same time as VDD in the power up sequence.
V
DDA
V
must be greater than or equal to VDD.
DDA
Electrostatic discharge voltage (human body
model)
) and ground (VSS, V
DDA
power pins-50
DD
(4)
) pins must always be connected to the external power supply, in the
SSA
(1)
-0.34.0
-0.4
− 0.3V
SS
− 0.34.0
SS
− 0.34.0
SS
-50
see Section 6.3.12: Electrical
sensitivity characteristics
and VDD:
DDA
DD
+ 4.0
V
mV
-
58/149DS9118 Rev 14
STM32F303xB STM32F303xCElectrical characteristics
2. V
3. V
must be always lower or equal than V
REF+
maximum must always be respected. Refer to Table 22: Current characteristics for the maximum allowed injected
IN
current values.
DDA
(V
REF+
≤ V
. If unused then it must be connected to V
DDA)
DDA
.
4. Include VREF- pin.
Table 22. Current characteristics
SymbolRatings Max.Unit
ΣI
ΣI
I
I
VDD
VSS
VDD
VSS
Total current into sum of all V
power lines (source)160
DD
Total current out of sum of all VSS ground lines (sink)− 160
Maximum current into each V
DD
Maximum current out of each V
power line (source)
ground line (sink)
SS
(1)
(1)
100
− 100
Output current sunk by any I/O and control pin25
I
IO(PIN)
ΣI
IO(PIN)
I
INJ(PIN)
ΣI
INJ(PIN)
1. All main power (VDD, V
permitted range.
2. This current consumption must be correctly distributed over all I/Os and control pins.The total output current must not be
sunk/sourced between two consecutive power supply pins referring to high pin count LQFP packages.
3. Positive injection is not possible on these I/Os and does not occur for input voltages lower than the specified maximum
value.
4. A positive injection is induced by V
exceeded. Refer to Table 21: Voltage characteristics for the maximum allowed input voltage values.
5. A positive injection is induced by V
exceeded. Refer also to Table 21: Voltage characteristics for the maximum allowed input voltage values. Negative injection
disturbs the analog performance of the device. See note
6. When several inputs are submitted to a current injection, the maximum ΣI
negative injected currents (instantaneous values).
Output current source by any I/O and control pin− 25
Total output current sunk by sum of all IOs and control pins
Total output current sourced by sum of all IOs and control pins
Injected current on FT, FTf and B pins
Injected current on TC and RST pin
Injected current on TTa pins
(5)
(3)
(4)
Total injected current (sum of all I/O and control pins)
) and ground (VSS and V
DDA
> VDD while a negative injection is induced by VIN< VSS. I
IN
> V
IN
DDA
while a negative injection is induced by VIN< VSS. I
) pins must always be connected to the external power supply, in the
SSA
(2)
below Table 70.
INJ(PIN)
(2)
(2)
80
− 80
-5/+0
± 5
± 5
(6)
INJ(PIN)
is the absolute sum of the positive and
± 25
must never be
(PIN) must never be
INJ
mA
Table 23. Thermal characteristics
SymbolRatings ValueUnit
T
STG
T
J
Storage temperature range–65 to +150°C
Maximum junction temperature150°C
DS9118 Rev 1459/149
125
Electrical characteristicsSTM32F303xB STM32F303xC
6.3 Operating conditions
6.3.1 General operating conditions
Table 24. General operating conditions
SymbolParameter ConditionsMinMaxUnit
f
HCLK
PCLK1
f
PCLK2
V
DD
V
DDA
V
BAT
V
IN
Internal AHB clock frequency-0 72
Internal APB1 clock frequency-0 36
Internal APB2 clock frequency-072
Standard operating voltage-23.6V
Analog operating voltage
(OPAMP and DAC not used)
Must have a potential
23.6
equal to or higher than
Analog operating voltage
(OPAMP and DAC used)
V
DD
2.43.6
Backup operating voltage-1.653.6V
DD
DDA
+0.3
+0.3
I/O input voltage
TC I/O–0.3V
TTa I/O–0.3V
FT and FTf I/O
(1)
–0.35.5
BOOT005.5
WLCSP100-500
Power dissipation at T
P
85 °C for suffix 6 or TA =
D
105 °C for suffix 7
(2)
=
A
LQFP100-488
LQFP64-444
LQFP48-364
MHzf
V
V
mW
Ambient temperature for 6
dissipation
suffix version
Low-power dissipation
Maximum power
A
T
Maximum power
Ambient temperature for 7
dissipation
suffix version
Low-power dissipation
6 suffix version–40 105
T
J Junction temperature range
7 suffix version–40 125
1. To sustain a voltage higher than VDD+0.3 V, the internal pull-up/pull-down resistors must be disabled.
2. If TA is lower, higher PD values are allowed as long as TJ does not exceed T
characteristics).
3. In low-power dissipation state, TA can be extended to this range as long as TJ does not exceed T
Section 7.5: Thermal characteristics).
60/149DS9118 Rev 14
–40 85
(3)
–40 105
–40 105
(3)
–40 125
(see Section 7.5: Thermal
Jmax
Jmax
°C
°C
°C
(see
STM32F303xB STM32F303xCElectrical characteristics
6.3.2 Operating conditions at power-up / power-down
The parameters given in Tab le 25 are derived from tests performed under the ambient
temperature condition summarized in Tab le 24.
SymbolParameterConditionsMinMaxUnit
Table 25. Operating conditions at power-up / power-down
t
VDD
t
VDDA
VDD rise time rate
-
V
fall time rate20
DD
V
rise time rate
DDA
V
fall time rate20
DDA
-
0
0
6.3.3 Embedded reset and power control block characteristics
The parameters given in Tab le 26 are derived from tests performed under ambient
temperature and VDD supply voltage conditions summarized in Table 24.
V
POR/PDR
V
t
RSTTEMPO
1. The PDR detector monitors VDD and also V
2. The product behavior is guaranteed by design down to the minimum V
3. Guaranteed by design.
Table 26. Embedded reset and power control block characteristics
SymbolParameterConditionsMinTypMaxUnit
Power on/power down
(1)
reset threshold
(1)
PDRhyst
PDR hysteresis--40-mV
POR reset
(3)
temporization
monitors only VDD.
Falling edge
Rising edge1.841.922.0V
-1.52.54.5ms
(if kept enabled in the option bytes). The POR detector
DDA
POR/PDR
(2)
1.8
value.
∞
∞
µs/V
∞
∞
1.881.96V
DS9118 Rev 1461/149
125
Electrical characteristicsSTM32F303xB STM32F303xC
Table 27. Programmable voltage detector characteristics
SymbolParameterConditionsMin
Rising edge2.12.182.26
V
PVD0
PVD threshold 0
Falling edge22.082.16
Rising edge2.192.282.37
V
PVD1
PVD threshold 1
Falling edge2.092.182.27
Rising edge2.282.382.48
V
PVD2
PVD threshold 2
Falling edge2.182.282.38
Rising edge2.382.482.58
V
PVD3
PVD threshold 3
Falling edge2.282.382.48
Rising edge2.472.582.69
V
PVD4
PVD threshold 4
Falling edge2.372.482.59
Rising edge2.572.682.79
V
PVD5
PVD threshold 5
Falling edge2.472.582.69
Rising edge2.662.782.9
V
PVD6
PVD threshold 6
Falling edge2.562.682.8
Rising edge2.762.883
V
PVD7
V
PVDhyst
IDD(PVD)
1. Guaranteed by characterization results.
2. Guaranteed by design.
PVD threshold 7
Falling edge2.662.782.9
(2)
PVD hysteresis--100-mV
PVD current
consumption
--0.150.26µA
(1)
TypMax
(1)
Unit
V
62/149DS9118 Rev 14
STM32F303xB STM32F303xCElectrical characteristics
6.3.4 Embedded reference voltage
The parameters given in Tab le 28 are derived from tests performed under ambient
temperature and VDD supply voltage conditions summarized in Table 24.
SymbolParameterConditionsMinTypMaxUnit
Table 28. Embedded internal reference voltage
V
REFINT
Internal reference voltage
ADC sampling time when
T
S_vrefint
reading the internal
reference voltage
Internal reference voltage
V
RERINT
spread over the
temperature range
T
Coeff
1. Guaranteed by characterization results.
2. Guaranteed by design.
Temperature coefficient---
Table 29. Internal reference voltage calibration values
Calibration value nameDescriptionMemory address
Raw data acquired at
V
REFINT_CAL
temperature of 30 °C
= 3.3 V
V
DDA
6.3.5 Supply current characteristics
The current consumption is a function of several parameters and factors such as the
operating voltage, ambient temperature, I/O pin loading, device software configuration,
operating frequencies, I/O pin switching rate, program location in memory and executed
binary code.
The current consumption is measured as described in Figure 12: Current consumption
measurement scheme.
All Run-mode current consumption measurements given in this section are performed with a
reduced code that gives a consumption equivalent to CoreMark code.
–40 °C < T
–40 °C < T
< +105 °C1.21.231.25V
A
< +85 °C1.21.23 1.24
A
-2.2--µs
VDD = 3 V ±10 mV--
0x1FFF F7BA - 0x1FFF F7BB
10
100
(2)
(1)
(2)
V
mV
ppm/°C
Typical and maximum current consumption
The MCU is placed under the following conditions:
•All I/O pins are in input mode with a static value at VDD or VSS (no load)
•All peripherals are disabled except when explicitly mentioned
•The Flash memory access time is adjusted to the f
to 24 MHz,1 wait state from 24 to 48 MHz and 2 wait states from 48 to 72 MHz)
•Prefetch in ON (reminder: this bit must be set before clock setting and bus prescaling)
•When the peripherals are enabled f
•When f
> 8 MHz, the PLL is ON and the PLL input is equal to HSI/2 (4 MHz) or
HCLK
PCLK2
= f
HCLK
HSE (8 MHz) in bypass mode.
DS9118 Rev 1463/149
frequency (0 wait state from 0
HCLK
and f
PCLK1
= f
HCLK/2
125
Electrical characteristicsSTM32F303xB STM32F303xC
The parameters given in Tab le 30 to Ta bl e 34 are derived from tests performed under
ambient temperature and supply voltage conditions summarized in Tab le 24.
Table 30. Typical and maximum current consumption from VDD supply at V
All peripherals enabledAll peripherals disabled
DD =
3.6V
Symbol Parameter Conditionsf
External
clock (HSE
bypass)
Supply
current in
Run mode,
executing
from Flash
Internal
clock (HSI)
I
DD
External
clock (HSE
bypass)
Supply
current in
Run mode,
executing
from RAM
Internal
clock (HSI)
HCLK
Typ
Max @ T
(1)
A
Max @ T
Typ
(1)
A
25 °C 85 °C 105 °C25 °C 85 °C 105 °C
72 MHz 61.265.867.668.527.830.330.731.5
64 MHz 54.759.160.261.124.627.227.628.3
48 MHz 41.745.146.247.219.221.121.421.8
32 MHz 28.131.532.532.712.914.614.815.3
24 MHz 21.423.724.425.210.011.411.412.1
8 MHz7.48.48.69.43.64.14.45.0
1 MHz1.31.61.82.60.81.01.22.1
64 MHz 49.754.455.456.324.527.227.428.1
48 MHz 37.942.243.043.518.921.421.521.6
32 MHz 25.829.229.230.012.714.214.615.2
24 MHz 19.722.322.623.26.77.77.98.5
8 MHz6.97.88.38.83.54.04.45.0
72 MHz 60.8 66.2
(2)
69.770.4
(2)
27.4 31.7
(2)
32.232.5
64 MHz 54.359.162.263.324.328.328.728.8
48 MHz 41.045.647.347.918.321.621.922.1
32 MHz 27.632.432.432.912.315.015.215.4
24 MHz 20.823.924.325.09.311.311.412.0
8 MHz6.97.88.79.03.13.74.24.9
1 MHz0.91.21.52.30.40.61.01.8
64 MHz 49.253.955.257.423.927.828.228.4
48 MHz 37.340.841.444.118.221.021.621.9
32 MHz 25.127.629.130.112.014.014.515.1
24 MHz 19.021.622.122.96.37.27.78.1
8 MHz6.47.37.98.43.03.54.04.7
(2)
Unit
mA
64/149DS9118 Rev 14
STM32F303xB STM32F303xCElectrical characteristics
Table 30. Typical and maximum current consumption from VDD supply at V
All peripherals enabledAll peripherals disabled
Symbol Parameter Conditionsf
HCLK
Max @ T
Typ
25 °C 85 °C 105 °C25 °C 85 °C 105 °C
72 MHz 44.048.449.450.56.67.57.98.7
64 MHz 39.243.344.045.26.06.87.27.9
48 MHz 29.632.733.334.34.55.25.66.3
32 MHz 19.723.323.323.53.13.54.04.8
24 MHz 14.917.617.818.32.42.83.33.9
8 MHz4.95.76.16.90.81.01.42.2
1 MHz0.60.91.22.10.10.30.61.5
64 MHz 34.238.139.240.35.76.36.87.5
I
DD
Supply
current in
Sleep
mode,
executing
from Flash
or RAM
1. Guaranteed by characterization results unless otherwise specified.
2. Data based on characterization results and tested in production with code executing from RAM.
(1)
A
Typ
3.6V (continued)
DD =
Max @ T
(1)
A
Unit
mA
Table 31. Typical and maximum current consumption from the V
Symbol Parameter
Supply
current in
Conditions
(1)
HSE
bypass
Run/Sleep
I
DDA
mode,
code
executing
from Flash
or RAM
HSI clock
1. Current consumption from the V
PLL is off, I
2. Guaranteed by characterization results.
is independent from the frequency.
DDA
supply is independent of whether the peripherals are on or off. Furthermore when the
DDA
supply
DDA
f
HCLK
V
Typ
2.4 V V
DDA =
Max @ T
(2)
A
Typ
DDA =
Max @ T
3.6 V
(2)
A
25 °C85 °C 105 °C25 °C 85 °C 105 °C
72 MHz225276289297245302319329
64 MHz198249261268216270284293
48 MHz149195204211159209222230
32 MHz102145152157110154162169
24 MHz8011912412886126131135
8 MHz23463459
1 MHz23573469
64 MHz270323337344299354371381
48 MHz220269280286244293309318
32 MHz173218228233193239251257
24 MHz151194200204169211219225
8 MHz73979910388105110116
Unit
µA
DS9118 Rev 1465/149
125
Electrical characteristicsSTM32F303xB STM32F303xC
Table 32. Typical and maximum VDD consumption in Stop and Standby modes
Symbol ParameterConditions
Typ @VDD (VDD=V
)Max
DDA
2.0 V 2.4 V 2.7 V 3.0 V 3.3 V 3.6 V
T
=
A
25 °C
TA =
85 °C
(1)
TA =
105 °C
Unit
Supply
Regulator in run mode,
all oscillators OFF
20.05 20.33 20.42 20.50 20.67 20.80 44.2
current in
Regulator in low-power
mode, all oscillators OFF
7.63 7.77 7.90 8.07 8.17 8.33 30.6
LSI ON and IWDG ON0.80 0.96 1.09 1.23 1.37 1.51---
I
DD
Stop mode
Supply
current in
Standby
LSI OFF and IWDG OFF 0.60 0.74 0.83 0.93 1.02 1.11 5.0
mode
1. Guaranteed by characterization results unless otherwise specified.
2. Data based on characterization results and tested in production.
Table 33. Typical and maximum V
consumption in Stop and Standby modes
DDA
Typ @ V
Symbol ParameterConditions
2.0 V 2.4 V 2.7 V 3.0 V 3.3 V 3.6 V
Supply
current in
Stop mode
Regulator in run mode,
all oscillators OFF
Regulator in low-power
mode, all oscillators
1.81 1.95 2.07 2.20 2.35 2.523.75.58.8
1.81 1.95 2.07 2.20 2.35 2.523.75.58.8
OFF
I
DDA
Supply
current in
Standby
mode
Supply
current in
Stop mode
LSI ON and IWDG ON 2.22 2.42 2.59 2.783.0 3.24---
monitoring ON
DDA
LSI OFF and IWDG
V
OFF
Regulator in run mode,
all oscillators OFF
1.69 1.82 1.94 2.08 2.23 2.403.55.49.2
1.05 1.08 1.10 1.15 1.22 1.29---
Regulator in low-power
mode, all oscillators
1.05 1.08 1.10 1.15 1.22 1.29---
OFF
Supply
current in
Standby
mode
1. Guaranteed by characterization results.
LSI ON and IWDG ON 1.44 1.52 1.60 1.71 1.84 1.98---
monitoring OFF
DDA
LSI OFF and IWDG
V
OFF
0.93 0.95 0.98 1.02 1.08 1.15---
DD
(V
DD
(2)
350735
(2)
335720
(2)
7.813.3
= V
)Max
DDA
=
TA =
T
A
25 °C
85 °C
(1)
(2)
(2)
(2)
TA =
105 °C
µA
Unit
µA
The total consumption is the sum of IDD and IDDA.
66/149DS9118 Rev 14
STM32F303xB STM32F303xCElectrical characteristics
0
1
25°C60°C85°C105°C
1.6
1.8
2 V
2.4
2.7
3 V
3.3
3.6
T
A
(°C)
(μA)
I
VBAT
MS31124V1
Table 34. Typical and maximum current consumption from V
Typ @V
Symbol
Para
meter
Conditions
(1)
1.65V 1.8V 2V 2.4V 2.7V3V 3.3V 3.6V
LSE & RTC
ON; "Xtal
mode"
lower
driving
0.480.50 0.52 0.580.65 0.72 0.80 0.901.11.52.0
capability;
I
DD_VBAT
Backup
domain
supply
current
LSEDRV[1:
0] = '00'
LSE & RTC
ON; "Xtal
mode"
higher
driving
0.830.86 0.90 0.981.03 1.10 1.20 1.301.52.22.9
capability;
LSEDRV[1:
0] = '11'
1. Crystal used: Abracon ABS07-120-32.768 kHz-T with a CL of 6 pF for typical values.
2. Guaranteed by characterization results.
BAT
BAT
T
25°C
supply
Max
@V
BAT
=
TA =
A
85°C
= 3.6 V
TA =
105°C
(2)
Unit
µA
Figure 13. Typical V
current consumption (LSE and RTC ON/LSEDRV[1:0] = ’00’)
BAT
1.4
1.2
5 V
V
0.8
V
0.6
V
0.4
V
0.2
V
DS9118 Rev 1467/149
125
Electrical characteristicsSTM32F303xB STM32F303xC
Typical current consumption
The MCU is placed under the following conditions:
•V
•All I/O pins available on each package are in analog input configuration
•The Flash access time is adjusted to f
•When the peripherals are enabled, f
•PLL is used for frequencies greater than 8 MHz
•AHB prescaler of 2, 4, 8,16 and 64 is used for the frequencies 4 MHz, 2 MHz, 1 MHz,
Table 35. Typical current consumption in Run mode, code with data processing running from
SymbolParameterConditionsf
I
DD
(1) (2)
I
DDA
1. V
DDA
2. When peripherals are enabled, the power consumption of the analog part of peripherals such as ADC, DAC, Comparators,
OpAmp etc. is not included. Refer to the tables of characteristics in the subsequent sections.
Supply current in
Run mode from
V
DD
Supply current in
Run mode from
V
DDA
monitoring is ON.
DD
= V
DDA
= 3.3 V
frequency (0 wait states from 0 to 24 MHz,
HCLK
1 wait state from 24 to 48 MHz and 2 wait states from 48 MHz to 72 MHz), and Flash
prefetch is ON
APB1
= f
AHB/2
, f
APB2
= f
AHB
500 kHz and 125 kHz respectively.
Flash
Typ
supply
supply
Running from HSE
crystal clock 8 MHz,
code executing from
Flash
HCLK
72 MHz61.328.0
64 MHz54.825.4
48 MHz41.919.3
32 MHz28.513.3
24 MHz21.810.4
16 MHz14.97.2
8 MHz7.73.9
4 MHz4.52.5
2 MHz2.81.7
1 MHz1.91.3
500 kHz1.41.1
125 kHz1.10.9
72 MHz240.3239.5
64 MHz210.9210.3
48 MHz155.8155.6
32 MHz105.7105.6
24 MHz82.182.0
16 MHz58.858.8
8 MHz2.42.4
4 MHz2.42.4
2 MHz2.42.4
1 MHz2.42.4
500 kHz2.42.4
125 kHz2.42.4
Peripherals
enabled
Peripherals
disabled
Unit
mA
µA
68/149DS9118 Rev 14
STM32F303xB STM32F303xCElectrical characteristics
Table 36. Typical current consumption in Sleep mode, code running from Flash or RAM
Typ
SymbolParameterConditionsf
HCLK
Peripherals
enabled
Peripherals
disabled
72 MHz44.17.0
64 MHz39.76.3
48 MHz30.34.9
32 MHz20.53.5
24 MHz15.42.8
I
DD
Supply current in
Sleep mode from
supply
V
DD
16 MHz10.62.0
8 MHz5.41.1
4 MHz3.21.0
2 MHz2.10.9
1 MHz1.50.8
Running from HSE
crystal clock 8 MHz,
code executing from
Flash or RAM
500 kHz1.20.8
125 kHz1.00.8
72 MHz239.7238.5
64 MHz210.5209.6
48 MHz155.0155.6
32 MHz105.3105.2
24 MHz81.981.8
I
DDA
(1) (2)
Supply current in
Sleep mode from
V
supply
DDA
16 MHz58.758.6
8 MHz2.42.4
4 MHz2.42.4
2 MHz2.42.4
1 MHz2.42.4
500 kHz2.42.4
125 kHz2.42.4
1. V
2. When peripherals are enabled, the power consumption of the analog part of peripherals such as ADC, DAC, Comparators,
monitoring is ON.
DDA
OpAmp etc. is not included. Refer to the tables of characteristics in the subsequent sections.
Unit
mA
µA
DS9118 Rev 1469/149
125
Electrical characteristicsSTM32F303xB STM32F303xC
I
SW
V
DDfSW
C××=
I/O system current consumption
The current consumption of the I/O system has two components: static and dynamic.
I/O static current consumption
All the I/Os used as inputs with pull-up generate current consumption when the pin is
externally held low. The value of this current consumption can be simply computed by using
the pull-up/pull-down resistors values given in
For the output pins, any external pull-down or external load must also be considered to
estimate the current consumption.
Additional I/O current consumption is due to I/Os configured as inputs if an intermediate
voltage level is externally applied. This current consumption is caused by the input Schmitt
trigger circuits used to discriminate the input value. Unless this specific configuration is
required by the application, this supply current consumption can be avoided by configuring
these I/Os in analog mode. This is notably the case of ADC input pins which should be
configured as analog inputs.
Caution:Any floating input pin can also settle to an intermediate voltage level or switch inadvertently,
as a result of external electromagnetic noise. To avoid current consumption related to
floating pins, they must either be configured in analog mode, or forced internally to a definite
digital value. This can be done either by using pull-up/down resistors or by configuring the
pins in output mode.
Tab l e 54: I/O static characteristics.
I/O dynamic current consumption
In addition to the internal peripheral current consumption (seeTab le 38: Peripheral current
consumption), the I/Os used by an application also contribute to the current consumption.
When an I/O pin switches, it uses the current from the MCU supply voltage to supply the I/O
pin circuitry and to charge/discharge the capacitive load (internal or external) connected to
the pin:
where
ISW is the current sunk by a switching I/O to charge/discharge the capacitive load
V
is the MCU supply voltage
DD
f
is the I/O switching frequency
SW
C is the total capacitance seen by the I/O pin: C = C
INT
+ C
EXT+CS
The test pin is configured in push-pull output mode and is toggled by software at a fixed
frequency.
70/149DS9118 Rev 14
STM32F303xB STM32F303xCElectrical characteristics
Table 37. Switching output I/O current consumption
SymbolParameterConditions
V
DD
C
ext
C = C
INT
V
DD
C
ext
C = C
INT
I
SW
I/O current
consumption
C = C
V
DD
C
ext
INT
= 3.3 V
= 0 pF
+ C
EXT
= 3.3 V
= 10 pF
+ C
EXT +CS
= 3.3 V
= 22 pF
+ C
EXT +CS
(1)
+ C
I/O toggling
frequency (fSW)
S
TypUnit
2 MHz0.90
4 MHz0.93
8 MHz1.16
18 MHz1.60
36 MHz2.51
48 MHz2.97
2 MHz0.93
4 MHz1.06
8 MHz1.47
18 MHz2.26
36 MHz3.39
48 MHz5.99
2 MHz1.03
4 MHz1.30
8 MHz1.79
18 MHz3.01
mA
1. CS = 5 pF (estimated value).
VDD = 3.3 V
C
C = C
INT
V
C
C = C
INT
= 33 pF
ext
+ C
= 3.3 V
DD
= 47 pF
ext
+ C
EXT
EXT
+ C
+ C
36 MHz5.99
2 MHz1.10
4 MHz1.31
8 MHz2.06
S
18 MHz3.47
36 MHz8.35
2 MHz1.20
4 MHz1.54
8 MHz2.46
S
18 MHz4.51
36 MHz9.98
DS9118 Rev 1471/149
125
Electrical characteristicsSTM32F303xB STM32F303xC
On-chip peripheral current consumption
The MCU is placed under the following conditions:
•all I/O pins are in analog input configuration
•all peripherals are disabled unless otherwise mentioned
•the given value is calculated by measuring the current consumption
–with all peripherals clocked off
–with only one peripheral clocked on
•ambient operating temperature at 25°C and V
Table 38. Peripheral current consumption
Typical consumption
Peripheral
BusMatrix
GPIOA10.0
GPIOB10.3
GPIOC2.2
GPIOD8.8
GPIOE3.3
GPIOF3.0
ADC1&2 17.3
ADC3&4 18.8
APB2-Bridge
SYSCFG7.3
USART123.3
APB1-Bridge
(2)
DMA17.6
DMA26.1
CRC2.1
TSC5.5
(3)
TIM140.0
SPI18.8
TIM836.4
TIM1517.1
TIM1610.1
TIM1711.0
(3)
TIM249.1
TIM338.8
TIM438.3
DD
12.6
I
DD
3.6
6.1
= V
DDA
= 3.3 V.
(1)
Unit
µA/MHz
72/149DS9118 Rev 14
STM32F303xB STM32F303xCElectrical characteristics
Table 38. Peripheral current consumption (continued)
Typical consumption
Peripheral
TIM69.7
TIM712.1
WWDG6.4
SPI240.4
SPI340.0
USART241.9
USART340.2
UART436.5
UART530.8
I2C110.5
I2C210.4
USB26.2
CAN33.4
PWR5.7
DAC15.4
I
DD
(1)
Unit
µA/MHz
1. The power consumption of the analog part (I
etc. is not included. Refer to the tables of characteristics in the subsequent sections.
2. BusMatrix is automatically active when at least one master is ON (CPU, DMA1 or DMA2).
3. The APBx bridge is automatically active when at least one peripheral is ON on the same bus.
) of peripherals such as ADC, DAC, Comparators, OpAmp
DDA
DS9118 Rev 1473/149
125
Electrical characteristicsSTM32F303xB STM32F303xC
6.3.6 Wakeup time from low-power mode
The wakeup times given in Tab le 39 are measured starting from the wakeup event trigger up
to the first instruction executed by the CPU:
•For Stop or Sleep mode: the wakeup event is WFE.
•WKUP1 (PA0) pin is used to wakeup from Standby, Stop and Sleep modes.
All timings are derived from tests performed under ambient temperature and VDD supply
voltage conditions summarized in
Table 39. Low-power mode wakeup timings
Tab l e 24.
SymbolParameterConditions
Regulator in
t
WUSTOP
t
WUSTANDBY
t
WUSLEEP
1. Guaranteed by characterization results.
Wakeup from
Stop mode
Wakeup from
(1)
Standby mode
Wakeup from
Sleep mode
run mode
Regulator in
low-power
mode
LSI and
IWDG OFF
Typ @ V DD, V
DD
= V
DDA
MaxUnit
2.0 V 2.4 V 2.7 V 3 V3.3 V 3.6 V
4.13.93.83.73.63.54.5
7.96.76.15.75.45.29
µs
69.260.356.453.751.750100
CPU
-6-
clock
cycles
74/149DS9118 Rev 14
STM32F303xB STM32F303xCElectrical characteristics
MS19214V2
V
HSEH
t
f(HSE)
90%
10%
T
HSE
t
t
r(HSE)
V
HSEL
t
w(HSEH)
t
w(HSEL)
6.3.7 External clock source characteristics
High-speed external user clock generated from an external source
In bypass mode the HSE oscillator is switched off and the input pin is a standard GPIO. The
external clock signal has to respect the I/O characteristics in
recommended clock input waveform is shown in Figure 14.
SymbolParameterConditionsMinTypMaxUnit
Table 40. High-speed external user clock characteristics
Section 6.3.14. However, the
f
HSE_ext
V
HSEH
V
HSEL
t
w(HSEH)
t
w(HSEL)
t
r(HSE)
t
f(HSE)
1. Guaranteed by design.
User external clock source
frequency
OSC_IN input pin high level voltage0.7V
OSC_IN input pin low level voltageV
OSC_IN high or low time
OSC_IN rise or fall time
Figure 14. High-speed external clock source AC timing diagram
(1)
(1)
(1)
1832MHz
-V
DD
-
SS
-0.3V
DD
V
DD
15--
ns
--20
DS9118 Rev 1475/149
125
Electrical characteristicsSTM32F303xB STM32F303xC
MS19215V2
V
LSEH
t
f(LSE)
90%
10%
T
LSE
t
t
r(LSE)
V
LSEL
t
w(LSEH)
t
w(LSEL)
Low-speed external user clock generated from an external source
In bypass mode the LSE oscillator is switched off and the input pin is a standard GPIO. The
external clock signal has to respect the I/O characteristics in
recommended clock input waveform is shown in Figure 15
SymbolParameterConditionsMinTypMaxUnit
Table 41. Low-speed external user clock characteristics
Section 6.3.14. However, the
f
LSE_ext
V
LSEH
V
LSEL
t
w(LSEH)
t
w(LSEL)
t
r(LSE)
t
f(LSE)
1. Guaranteed by design.
User External clock source
frequency
OSC32_IN input pin high level
voltage
OSC32_IN input pin low level
voltage
OSC32_IN high or low time
OSC32_IN rise or fall time
Figure 15. Low-speed external clock source AC timing diagram
(1)
(1)
(1)
-32.7681000kHz
0.7V
DD
-V
DD
V
-
V
SS
-0.3V
DD
450--
ns
--50
76/149DS9118 Rev 14
STM32F303xB STM32F303xCElectrical characteristics
High-speed external clock generated from a crystal/ceramic resonator
The high-speed external (HSE) clock can be supplied with a 4 to 32 MHz crystal/ceramic
resonator oscillator. All the information given in this paragraph are based on design
simulation results obtained with typical external components specified in
application, the resonator and the load capacitors have to be placed as close as possible to
the oscillator pins in order to minimize output distortion and startup stabilization time. Refer
to the crystal resonator manufacturer for more details on the resonator characteristics
(frequency, package, accuracy).
SymbolParameterConditions
Table 42. HSE oscillator characteristics
(1)
Min
Table 42. In the
(2)
TypMa x
(2)
Unit
f
OSC_IN
R
I
DD
g
t
SU(HSE)
1. Resonator characteristics given by the crystal/ceramic resonator manufacturer.
2. Guaranteed by design.
3. This consumption level occurs during the first 2/3 of the t
4. t
SU(HSE)
oscillation is reached. This value is measured for a standard crystal resonator and it can vary significantly
with the crystal manufacturer.
Oscillator frequency-4832MHz
Feedback resistor--200kΩ
F
During startup
V
=3.3 V, Rm= 30Ω,
DD
CL=10 pF@8 MHz
=3.3 V, Rm= 45Ω,
V
DD
CL=10 pF@8 MHz
HSE current consumption
=3.3 V, Rm= 30Ω,
V
DD
CL=5 pF@32 MHz
=3.3 V, Rm= 30Ω,
V
DD
CL=10 pF@32 MHz
V
=3.3 V, Rm= 30Ω,
DD
CL=20 pF@32 MHz
Oscillator transconductanceStartup10--mA/V
m
(4)
Startup time VDD is stabilized-2-ms
SU(HSE)
is the startup time measured from the moment it is enabled (by software) to a stabilized 8 MHz
(3)
startup time.
--8.5
-0.4-
-0.5-
-0.8-
-1-
-1.5-
mA
DS9118 Rev 1477/149
125
Electrical characteristicsSTM32F303xB STM32F303xC
MS19876V1
(1)
OSC_IN
OSC_OUT
R
F
Bias
controlled
gain
f
HSE
R
EXT
8 MHz
resonator
Resonator with integrated
capacitors
C
L1
C
L2
For CL1 and CL2, it is recommended to use high-quality external ceramic capacitors in the
5
pF to 25 pF range (typ.), designed for high-frequency applications, and selected to match
the requirements of the crystal or resonator (see
Figure 16). CL1 and C
are usually the
L2
same size. The crystal manufacturer typically specifies a load capacitance which is the
series combination of C
and CL2. PCB and MCU pin capacitance must be included (10 pF
L1
can be used as a rough estimate of the combined pin and board capacitance) when sizing
C
and CL2.
L1
Note:For information on selecting the crystal, refer to the application note AN2867 “Oscillator
design guide for ST microcontrollers” available from the ST website www.st.com.
Figure 16. Typical application with an 8 MHz crystal
1. R
value depends on the crystal characteristics.
EXT
78/149DS9118 Rev 14
STM32F303xB STM32F303xCElectrical characteristics
Low-speed external clock generated from a crystal/ceramic resonator
The low-speed external (LSE) clock can be supplied with a 32.768 kHz crystal/ceramic
resonator oscillator. All the information given in this paragraph are based on design
simulation results obtained with typical external components specified in
application, the resonator and the load capacitors have to be placed as close as possible to
the oscillator pins in order to minimize output distortion and startup stabilization time. Refer
to the crystal resonator manufacturer for more details on the resonator characteristics
(frequency, package, accuracy).
SymbolParameterConditions
Table 43. LSE oscillator characteristics (f
= 32.768 kHz)
LSE
(1)
Min
(2)
Table 43. In the
TypMax
(2)
Unit
LSEDRV[1:0]=00
lower driving capability
LSEDRV[1:0]=10
medium low driving capability
I
DD
LSE current consumption
LSEDRV[1:0]=01
medium high driving capability
LSEDRV[1:0]=11
higher driving capability
LSEDRV[1:0]=00
lower driving capability
LSEDRV[1:0]=10
g
m
Oscillator
transconductance
medium low driving capability
LSEDRV[1:0]=01
medium high driving capability
LSEDRV[1:0]=11
higher driving capability
(3)
t
SU(LSE)
1. Refer to the note and caution paragraphs below the table, and to the application note AN2867 “Oscillator design guide for
ST microcontrollers”.
2. Guaranteed by design.
3. t
SU(LSE)
reached. This value is measured for a standard crystal and it can vary significantly with the crystal manufacturer.
Startup timeVDD is stabilized-2-s
is the startup time measured from the moment it is enabled (by software) to a stabilized 32.768 kHz oscillation is
-0.50.9
--1
--1.3
--1.6
5--
8--
µA/V
15--
25--
µA
Note:For information on selecting the crystal, refer to the application note AN2867 “Oscillator
design guide for ST microcontrollers” available from the ST website www.st.com.
DS9118 Rev 1479/149
125
Electrical characteristicsSTM32F303xB STM32F303xC
MS30253V2
OSC32_IN
OSC32_OUT
Drive
programmable
amplifier
f
LSE
32.768 kHz
resonator
Resonator with integrated
capacitors
C
L1
C
L2
Figure 17. Typical application with a 32.768 kHz crystal
Note:An external resistor is not required between OSC32_IN and OSC32_OUT and it is forbidden
to add one.
6.3.8 Internal clock source characteristics
The parameters given in Tab le 44 are derived from tests performed under ambient
temperature and supply voltage conditions summarized in Table 24.
High-speed internal (HSI) RC oscillator
Table 44. HSI oscillator characteristics
(1)
SymbolParameterConditionsMinTypMaxUnit
f
HSI
TRIMHSI user trimming step---1
DuCy
ACC
t
su(HSI)
I
DDA(HSI)
1. V
DDA
2. Guaranteed by design.
3. Guaranteed by characterization results.
4. Factory calibrated, parts not soldered.
Frequency--8-MHz
-2.8
(2)
(3)
(3)
(3)
(3)
(3)
-55
-3.8
-2.3
-2
-2
-2
-1-1
(2)
-2
Duty cycle-45
(HSI)
= -40 to
T
A
105°C
T
= -10 to 85°C -1.9
A
Accuracy of the HSI oscillator
HSI
TA = 0 to 85°C-1.9
TA = 0 to 70°C-1.3
TA = 0 to 55°C-1
TA = 25°C
HSI oscillator startup time-1
HSI oscillator power
consumption
= 3.3 V, TA = –40 to 105 °C unless otherwise specified.
(4)
--80100
(2)
(2)
(3)
(3)
(3)
(3)
(3)
(2)
(2)
%
%
%
µs
µA
80/149DS9118 Rev 14
STM32F303xB STM32F303xCElectrical characteristics
MS30985V4
T [ºC]
A
MAX
MIN
-40-20020406080100120
4%
3%
2%
1%
0%
-1%
-2%
-3%
-4%
Figure 18. HSI oscillator accuracy characterization results for soldered parts
Low-speed internal (LSI) RC oscillator
Table 45. LSI oscillator characteristics
(1)
SymbolParameterMinTypMaxUnit
f
LSI
t
su(LSI)
I
DD(LSI)
1. V
DDA
2. Guaranteed by design.
Frequency 304050kHz
(2)
LSI oscillator startup time--85µs
(2)
LSI oscillator power consumption-0.751.2µA
= 3.3 V, TA = –40 to 105 °C unless otherwise specified.
DS9118 Rev 1481/149
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Electrical characteristicsSTM32F303xB STM32F303xC
6.3.9 PLL characteristics
The parameters given in Tab le 46 are derived from tests performed under ambient
temperature and supply voltage conditions summarized in Table 24.
SymbolParameter
PLL input clock
f
PLL_IN
f
PLL_OUT
t
LOCK
PLL input clock duty cycle40
PLL multiplier output clock16
PLL lock time--200
JitterCycle-to-cycle jitter--300
1. Take care of using the appropriate multiplier factors so as to have PLL input clock values compatible with
the range defined by f
2. Guaranteed by design.
PLL_OUT
Table 46. PLL characteristics
MinTypMax
(1)
.
(2)
1
(2)
(2)
Value
Unit
-24
-60
(2)
(2)
MHz
%
-72MHz
(2)
(2)
µs
ps
6.3.10 Memory characteristics
Flash memory
The characteristics are given at TA = –40 to 105 °C unless otherwise specified.
SymbolParameter ConditionsMinTypMax
prog
t
ME
I
DD
16-bit programming time TA = –40 to +105 °C4053.560µs
Page (2 KB) erase timeTA = –40 to +105 °C20-40ms
Mass erase timeTA = –40 to +105 °C20-40ms
Supply current
Table 48. Flash memory endurance and data retention
t
t
ERASE
1. Guaranteed by design.
SymbolParameter Conditions
N
t
RET
END
Endurance
Data retention
Table 47. Flash memory characteristics
Write mode--10mA
Erase mode--12mA
= –40 to +85 °C (6 suffix versions)
T
A
T
= –40 to +105 °C (7 suffix versions)
A
1 kcycle
10 kcycles
(2)
at TA = 85 °C
(2)
at TA = 105 °C10
(2)
at TA = 55 °C20
Value
(1)
Min
10kcycles
30
(1)
Unit
Unit
Years1 kcycle
1. Guaranteed by characterization results.
2. Cycling performed over the whole temperature range.
82/149DS9118 Rev 14
STM32F303xB STM32F303xCElectrical characteristics
6.3.11 EMC characteristics
Susceptibility tests are performed on a sample basis during device characterization.
Functional EMS (electromagnetic susceptibility)
While a simple application is executed on the device (toggling 2 LEDs through I/O ports).
the device is stressed by two electromagnetic events until a failure occurs. The failure is
indicated by the LEDs:
•Electrostatic discharge (ESD) (positive and negative) is applied to all device pins until
a functional disturbance occurs. This test is compliant with the IEC 61000-4-2 standard.
•FTB: A Burst of Fast Transient voltage (positive and negative) is applied to V
V
through a 100 pF capacitor, until a functional disturbance occurs. This test is
SS
compliant with the IEC 61000-4-4 standard.
A device reset allows normal operations to be resumed.
The test results are given in Tab le 49. They are based on the EMS levels and classes
defined in the application note AN1709.
Table 49. EMS characteristics
DD
and
SymbolParameterConditions
= 3.3 V, LQFP100, TA = +25°C,
V
V
V
FESD
EFTB
Voltage limits to be applied on any I/O pin to
induce a functional disturbance
Fast transient voltage burst limits to be
applied through 100 pF on VDD and V
pins to induce a functional disturbance
SS
DD
f
= 72 MHz
HCLK
conforms to IEC 61000-4-2
V
= 3.3 V, LQFP100, TA = +25°C,
DD
f
= 72 MHz
HCLK
conforms to IEC 61000-4-4
Level/
Class
3B
4A
Designing hardened software to avoid noise problems
EMC characterization and optimization are performed at component level with a typical
application environment and simplified MCU software. It should be noted that good EMC
performance is highly dependent on the user application and the software in particular.
Therefore it is recommended that the user applies EMC software optimization and
prequalification tests in relation with the EMC level requested for his application.
Software recommendations
The software flowchart must include the management of runaway conditions such as:
•Corrupted program counter
•Unexpected reset
•Critical Data corruption (control registers...)
DS9118 Rev 1483/149
125
Electrical characteristicsSTM32F303xB STM32F303xC
Prequalification trials
Most of the common failures (unexpected reset and program counter corruption) can be
reproduced by manually forcing a low state on the NRST pin or the Oscillator pins for 1
second.
To complete these trials, ESD stress can be applied directly on the device, over the range of
specification values. When unexpected behavior is detected, the software can be hardened
to prevent unrecoverable errors occurring (see application note AN1015).
Electromagnetic Interference (EMI)
The electromagnetic field emitted by the device are monitored while a simple application is
executed (toggling 2 LEDs through the I/O ports). This emission test is compliant with
IEC
61967-2 standard which specifies the test board and the pin loading.
Table 50. EMI characteristics
Symbol ParameterConditions
= 3.6 V, TA = 25 °C,
V
DD
S
EMI
Peak level
LQFP100 package
compliant with IEC
61967-2
6.3.12 Electrical sensitivity characteristics
Based on three different tests (ESD, LU) using specific measurement methods, the device is
stressed in order to determine its performance in terms of electrical sensitivity.
Electrostatic discharge (ESD)
Electrostatic discharges (a positive then a negative pulse separated by 1 second) are
applied to the pins of each sample according to each pin combination. The sample size
depends on the number of supply pins in the device (3 parts × (n+1) supply pins). This test
conforms to the JESD22-A114,
SymbolRatingsConditionsPackages Class
Table 51. ESD absolute maximum ratings
ANSI/ESD STM5.3.1 standard.
Monitored
frequency band
Max vs. [f
8/72 MHz
HSE/fHCLK
]
Unit
0.1 to 30 MHz7
dBµV30 to 130 MHz20
130 MHz to 1GHz27
SAE EMI Level4-
Maximum
(1)
value
Unit
Electrostatic
V
ESD(HBM)
discharge voltage
(human body model)
Electrostatic
V
ESD(CDM)
discharge voltage
(charge device model)
1. Guaranteed by characterization results.
= +25 °C, conforming
T
A
to ANSI/ESDA/JEDEC JS-001
= +25 °C, conforming
T
A
to ANSI/ESDA/JEDEC JS-002
84/149DS9118 Rev 14
All22000
V
AllC2a500
STM32F303xB STM32F303xCElectrical characteristics
Static latch-up
Two complementary static tests are required on six parts to assess the latch-up
performance:
•A supply overvoltage is applied to each power supply pin
•A current injection is applied to each input, output and configurable I/O pin
These tests are compliant with EIA/JESD 78A IC latch-up standard.
SymbolParameterConditionsClass
Table 52. Electrical sensitivities
LUStatic latch-up classT
= +105 °C conforming to JESD78AII level A
A
6.3.13 I/O current injection characteristics
As a general rule, current injection to the I/O pins, due to external voltage below VSS or
above V
operation. However, in order to give an indication of the robustness of the microcontroller in
cases when abnormal injection accidentally happens, susceptibility tests are performed on a
sample basis during device characterization.
Functional susceptibility to I/O current injection
While a simple application is executed on the device, the device is stressed by injecting
current into the I/O pins programmed in floating input mode. While current is injected into
the I/O pin, one at a time, the device is checked for functional failures.
The failure is indicated by an out of range parameter: ADC error above a certain limit (higher
than 5 LSB TUE), out of conventional limits of induced leakage current on adjacent pins (out
of –5 µA/+0 µA range), or other functional failure (for example reset occurrence or oscillator
frequency deviation).
The test results are given in Tab le 53.
(for standard, 3 V-capable I/O pins) should be avoided during normal product
DD
DS9118 Rev 1485/149
125
Electrical characteristicsSTM32F303xB STM32F303xC
Table 53. I/O current injection susceptibility
SymbolDescription
Injected current on BOOT0– 0NA
Injected current on PC0, PC1, PC2, PC3, PF2, PA0,
PA1, PA2, PA3, PF4, PA4, PA5, PA6, PA7, PC4, PC5,
PB2 with induced leakage current on other pins from this
group less than -50 µA
Injected current on PB0, PB1, PE7, PE8, PE9, PE10,
PE11, PE12, PE13, PE14, PE15, PB12, PB13, PB14,
PB15, PD8, PD9, PD10, PD11, PD12, PD13, PD14 with
induced leakage current on other pins from this group
less than -50 µA
I
INJ
Injected current on PC0, PC1, PC2, PC3, PF2, PA0,
PA1, PA2, PA3, PF4, PA4, PA5, PA6, PA7, PC4, PC5,
PB2, PB0, PB1, PE7, PE8, PE9, PE10, PE11, PE12,
PE13, PE14, PE15, PB12, PB13, PB14, PB15, PD8,
PD9, PD10, PD11, PD12, PD13, PD14 with induced
leakage current on other pins from this group less than
400 µA
Injected current on any other FT and FTf pins– 5NA
Injected current on any other pins– 5+5
Functional susceptibility
Negative
injection
Positive
injection
– 5-
– 5-
-+5
Unit
mA
Note:It is recommended to add a Schottky diode (pin to ground) to analog pins which may
potentially inject negative currents.
86/149DS9118 Rev 14
STM32F303xB STM32F303xCElectrical characteristics
6.3.14 I/O port characteristics
General input/output characteristics
Unless otherwise specified, the parameters given in Tab le 54 are derived from tests
performed under the conditions summarized in Table 24. All I/Os are CMOS and TTL
compliant.
Table 54. I/O static characteristics
SymbolParameterConditionsMinTyp
TC and TTa I/O--0.3 V
V
IL
Low level input
voltage
FT and FTf I/O --0.475 V
BOOT0--0.3 VDD–0.3
All I/Os except BOOT0--0.3 V
(2)
(1)
(1)
(1)
--
--
--
--
V
IH
High level input
voltage
TC and TTa I/O0.445 VDD+0.398
FT and FTf I/O 0.5 V
BOOT00.2 V
DD
DD
All I/Os except BOOT00.7 V
+0.2
+0.95
DD
TC and TTa I/O-200
V
Schmitt trigger
hys
hysteresis
BOOT0-300
TC, FT and FTf I/O
TTa I/O in digital mode
≤ V
IN
≤ V
DD
V
SS
TTa I/O in digital mode
I
lkg
Input leakage
current
(3)
V
≤ V
IN
≤ V
DDA
DD
TTa I/O in analog mode
≤ V
DD
V
IN
≤ V
IN
IN
= V
≤ V
≤ 5 V
SS
DDA
(4)
V
SS
FT and FTf I/O
V
R
Weak pull-up
PU
equivalent resistor
(5)
--±0.1
--1
--±0.2
--10
254055kΩ
(1)
(1)
(1)
MaxUnit
(1)
DD
+0.07
DD
DD
-0.2
(2)
(1)
(1)
V
-
-
mVFT and FTf I/O-100
-
µA
R
1. Data based on design simulation.
2. Tested in production.
3. Leakage could be higher than the maximum value. if negative current is injected on adjacent pins. Refer to Table 53: I/O
4. To sustain a voltage higher than V
5. Pull-up and pull-down resistors are designed with a true resistance in series with a switchable PMOS/NMOS. This
Weak pull-down
PD
equivalent resistor
C
I/O pin capacitance--5-pF
IO
current injection susceptibility.
PMOS/NMOS contribution to the series resistance is minimum (~10% order).
(5)
DD
V
= V
IN
DD
+0.3 V, the internal pull-up/pull-down resistors must be disabled.
254055kΩ
DS9118 Rev 1487/149
125
Electrical characteristicsSTM32F303xB STM32F303xC
MS30255V2
V
DD
(V)
V
IHmin
2.0
V
ILmax
0.7
V
IL
/V
IH
(V)
1.3
2.03.6
V
ILmax
= 0.3V
DD
+0.07
0.6
2.73.03.3
CMOS standard requirements VILmax = 0.3V
DD
V
IHmin
= 0.445V
DD
+0.398
Area not determined
Tested in production
Tested in production
Based on design simulations
Based on design simulations
CMOS standard requirements V
IH
min = 0.7V
DD
MS30256V2
V
DD
(V)
V
IHmin
2.0
V
ILmax
0.8
V
IL
/V
IH
(V)
1.3
2.03.6
V
ILmax
= 0.3V
DD
+0.07
0.7
2.73.03.3
TTL standard requirements VILmax = 0.8V
V
IHmin
= 0.445V
DD
+0.398
Area not determined
Based on design simulations
Based on design simulations
TTL standard requirements VIHmin = 2V
All I/Os are CMOS and TTL compliant (no software configuration required). Their
characteristics cover more than the strict CMOS-technology or TTL parameters. The
coverage of these requirements is shown in
Figure 19 and Figure 20 for standard I/Os.
Figure 19. TC and TTa I/O input characteristics - CMOS port
Figure 20. TC and TTa I/O input characteristics - TTL port
88/149DS9118 Rev 14
STM32F303xB STM32F303xCElectrical characteristics
V
DD
(V)
2.0
0.5
V
IL
/V
IH
(V)
2.03.6
1.0
2.7
Area not determined
MS30257V3
V
ILmax
= 0.475V
DD
-0.2
V
IHmin
= 0.5V
DD
+0.2
Based on design simulations
Based on design simulations
CMOS standard requirements V
IH
min = 0.7V
DD
CMOS standard requirements V
IL
max = 0.3V
DD
MS30258V2
V
DD
(V)
2.0
V
IL
/V
IH
(V)
1.0
2.03.6
V
ILmin
= 0.475V
DD
-0.2
0.5
V
IHmin
= 0.5V
DD
+0.2
Area not determined
2.7
TTL standard requirements VIHmin = 2V
TTL standard requirements
VILmax = 0.8V
0.8
Based on design simulations
Based on design simulations
Figure 21. Five volt tolerant (FT and FTf) I/O input characteristics - CMOS port
Figure 22. Five volt tolerant (FT and FTf) I/O input characteristics - TTL port
DS9118 Rev 1489/149
125
Electrical characteristicsSTM32F303xB STM32F303xC
Output driving current
The GPIOs (general purpose input/outputs) can sink or source up to +/-8 mA, and sink or
source up to +/- 20
mA (with a relaxed V
OL/VOH
).
In the user application, the number of I/O pins which can drive current must be limited to
respect the absolute maximum rating specified in
•The sum of the currents sourced by all the I/Os on V
consumption of the MCU sourced on V
Σ
I
(see Table 22).
VDD
•The sum of the currents sunk by all the I/Os on V
consumption of the MCU sunk on V
Σ
I
(see Table 22).
VSS
cannot exceed the absolute maximum rating
SS
Section 6.2:
plus the maximum Run
cannot exceed the absolute maximum rating
DD,
DD,
plus the maximum Run
SS
Output voltage levels
Unless otherwise specified, the parameters given in Tab le 55 are derived from tests
performed under ambient temperature and VDD supply voltage conditions summarized in
Tab l e 24. All I/Os (FT, TTa and TC unless otherwise specified) are CMOS and TTL
compliant.
Table 55. Output voltage characteristics
SymbolParameterConditionsMinMaxUnit
= +8 mA
< 3.6 V
DD
(2)
= +8 mA
< 3.6 V
DD
= +6 mA
< 2.7 V
DD
< 3.6 V
DD
(2)
-0.4
-0.4
-1.3
-0.4
-0.4
(1)
V
OL
(3)
V
OH
(1)
V
OL
(3)
V
OH
(1)(4)
V
OL
(3)(4)
V
OH
(1)(4)
V
OL
(3)(4)
V
OH
V
OLFM+
1. The IIO current sunk by the device must always respect the absolute maximum rating specified in Table 22 and the sum of
(I/O ports and control pins) must not exceed ΣI
I
IO
2. TTL and CMOS outputs are compatible with JEDEC standards JESD36 and JESD52.
3. The I
4. Data based on design simulation.
current sourced by the device must always respect the absolute maximum rating specified in Table 22 and the sum
IO
(I/O ports and control pins) must not exceed ΣI
of I
IO
Output low level voltage for an I/O pin CMOS port
I
Output high level voltage for an I/O pin VDD–0.4-
IO
2.7 V < V
Output low level voltage for an I/O pin TTL port
I
Output high level voltage for an I/O pin 2.4-
Output low level voltage for an I/O pin
Output high level voltage for an I/O pin VDD–1.3-
Output low level voltage for an I/O pin
Output high level voltage for an I/O pin VDD–0.4-
Output low level voltage for an FTf I/O pin in
(1)(4)
FM+ mode
.
IO(PIN)
.
IO(PIN)
IO
2.7 V < V
I
= +20 mA
IO
2.7 V < VDD < 3.6 V
I
IO
2 V < V
I
= +20 mA
IO
2.7 V < V
V
90/149DS9118 Rev 14
STM32F303xB STM32F303xCElectrical characteristics
Input/output AC characteristics
The definition and values of input/output AC characteristics are given in Figure 23 and
Tab l e 56, respectively.
Unless otherwise specified, the parameters given are derived from tests performed under
ambient temperature and V
Table 56. I/O AC characteristics
supply voltage conditions summarized in Tabl e 24.
DD
(1)
OSPEEDRy [1:0]
value
(1)
x0
01
11
FM+
configuration
-t
SymbolParameterConditionsMinMaxUnit
(2)
CL = 50pF, V
C
(2)
CL = 50pF, V
C
CL = 30 pF, V
(2)
C
C
CL = 30pF, V
C
CL = 50pF, V
CL = 30pF, V
CL = 50pF, V
CL = 50pF, V
(2)
= 50pF, V
L
= 50pF, V
L
= 50 pF, VDD = 2.7 V to 3.6 V-30
L
= 50 pF, V
L
= 50pF, V
L
= 2 V to 3.6 V-2
DD
= 2 V to 3.6 V
DD
= 2 V to 3.6 V-10
DD
= 2 V to 3.6 V
DD
= 2.7 V to 3.6 V-50
DD
= 2 V to 2.7 V-20
DD
= 2.7 V to 3.6 V-5
DD
= 2.7 V to 3.6 V-8
DD
= 2 V to 2.7 V-12
DD
= 2.7 V to 3.6 V-5
DD
= 2.7 V to 3.6 V-8
DD
= 2 V to 2.7 V-12
DD
CL = 50 pF, VDD = 2 V to 3.6 V
-10
-125
-125
-25
-25
-2
-12
-34
(3)
(4)
f
max(IO)out
t
f(IO)out
t
r(IO)out
f
max(IO)out
t
f(IO)out
t
r(IO)out
f
max(IO)out
t
f(IO)out
t
r(IO)out
f
max(IO)out
t
f(IO)out
t
r(IO)out
EXTIpw
Maximum frequency
Output high to low level
fall time
Output low to high level
rise time
Maximum frequency
Output high to low level
fall time
Output low to high level
rise time
Maximum frequency
Output high to low level
fall time
Output low to high level
rise time
Maximum frequency
Output high to low level
fall time
Output low to high level
rise time
Pulse width of external
signals detected by the
(3)
(3)
(3)
(3)
(3)
(3)
(3)
(3)
(3)
(3)
(3)
(3)
(3)
(3)
(3)
(4)
(4)
(4)
-ns
EXTI controller
1. The I/O speed is configured using the OSPEEDRx[1:0] bits. Refer to the RM0316 reference manual for a description of
GPIO Port configuration register.
2. The maximum frequency is defined in Figure 23.
3. Guaranteed by design.
4. The I/O speed configuration is bypassed in FM+ I/O mode. Refer to the STM32F303x STM32F313xx reference manual
RM0316 for a description of FM+ I/O mode configuration.
MHz
ns
MHz
ns
MHz
MHz
MHz
ns
MHz
ns
DS9118 Rev 1491/149
125
Electrical characteristicsSTM32F303xB STM32F303xC
ai14131c
10%
90%
50%
t
r(IO)out
OUTPUT
EXTERNAL
ON 50pF
Maximum frequency is achieved if (tr + tf) ≤ 2/3)T and if the duty cycle is (45-55%)
10%
50%
90%
when loaded by 50pF
T
t
f(IO)out
Figure 23. I/O AC characteristics definition
6.3.15 NRST pin characteristics
The NRST pin input driver uses CMOS technology. It is connected to a permanent pull-up
resistor, R
Unless otherwise specified, the parameters given in Tab le 57 are derived from tests
performed under ambient temperature and VDD supply voltage conditions summarized in
Tab l e 24.
(see Tab le 54).
PU
Table 57. NRST pin characteristics
SymbolParameterConditionsMinTypMaxUnit
V
IL(NRST)
V
IH(NRST)
V
V
V
NF(NRST)
1. Guaranteed by design.
2. The pull-up is designed with a true resistance in series with a switchable PMOS. This PMOS contribution
(1)
NRST Input low level voltage---
(1)
NRST Input high level voltage-
hys(NRST)
R
PU
F(NRST)
resistance must be minimum
NRST Schmitt trigger voltage hysteresis --200-mV
Weak pull-up equivalent resistor
(1)
NRST Input filtered pulse---100
(1)
NRST Input not filtered pulse-500
(~10% order).
(2)
0.445V
0.398
V
= V
IN
SS
+
DD
(1)
254055kΩ
(1)
0.3V
DD
(1)
0.07
--
(1)
--ns
to the series
+
V
ns
92/149DS9118 Rev 14
STM32F303xB STM32F303xCElectrical characteristics
MS19878V1
External
reset circuitry
(1)
NRST
(2)
0.1 μF
V
DD
R
PU
Filter
Internal reset
Figure 24. Recommended NRST pin protection
1. The reset network protects the device against parasitic resets.
2. The user must ensure that the level on the NRST pin can go below the V
Table 57. Otherwise the reset will not be taken into account by the device.
max level specified in
IL(NRST)
6.3.16 Timer characteristics
The parameters given in Tab le 58 are guaranteed by design.
Refer to Section 6.3.14: I/O port characteristics for details on the input/output alternate
function characteristics (output compare, input capture, external clock, PWM output).
Table 58. T I M x
(1)(2)
characteristics
SymbolParameterConditionsMinMaxUnit
-1-
t
res(TIM)
f
EXT
Res
Timer resolution time
Timer external clock
frequency on CH1 to CH4
Timer resolution
TIM
f
TIMxCLK
f
TIMxCLK
x=1.8
f
TIMxCLK
TIMx (except TIM2)-16
TIM2-32
= 72 MHz13.9-ns
= 144 MHz
-0
6.95-ns
f
TIMxCLK
= 72 MHz036MHz
-165536
t
COUNTER
16-bit counter clock period
f
TIMxCLK
f
TIMxCLK
x=1.8
= 72 MHz0.0139910µs
= 144 MHz
0.0069455µs
--65536 × 65536
t
MAX_COUNT
Maximum possible count
with 32-bit counter
f
f
x=1.8
1. TIMx is used as a general term to refer to the TIM1, TIM2, TIM3, TIM4, TIM8, TIM15, TIM16 and TIM17
timers.
2. Guaranteed by design.
= 72 MHz-59.65s
TIMxCLK
= 144 MHz
TIMxCLK
-29.825s
t
TIMxCLK
/2
t
TIMxCLK
t
TIMxCLK
MHz
bit
DS9118 Rev 1493/149
125
Electrical characteristicsSTM32F303xB STM32F303xC
Table 59. IWDG min/max timeout period at 40 kHz (LSI)
Prescaler dividerPR[2:0] bits
Min timeout (ms) RL[11:0]=
0x000
Max timeout (ms) RL[11:0]=
(1)
0xFFF
/400.1409.6
/810.2819.2
/1620.41638.4
/3230.83276.8
/6441.66553.6
/12853.213107.2
/25676.426214.4
1. These timings are given for a 40 kHz clock but the microcontroller’s internal RC frequency can vary from 30
to 60 kHz. Moreover, given an exact RC oscillator frequency, the exact timings still depend on the phasing
of the APB interface clock versus the LSI clock so that there is always a full RC period of uncertainty.
Table 60. WWDG min-max timeout value @72 MHz (PCLK)
(1)
PrescalerWDGTBMin timeout valueMax timeout value
100.05687 3.6409
210.1137 7.2817
420.2275 14.564
830.4551 29.127
1. Guaranteed by design.
94/149DS9118 Rev 14
STM32F303xB STM32F303xCElectrical characteristics
6.3.17 Communications interfaces
I2C interface characteristics
The I2C interface meets the timings requirements of the I2C-bus specification and user
manual rev.03 for:
•Standard-mode (Sm) : with a bit rate up to 100 Kbits/s
•Fast-mode (Fm) : with a bit rate up to 400 Kbits/s
•Fast-mode Plus (Fm+) : with a bit rate up to 1Mbits/s
The I2C timings requirements are guaranteed by design when the I2C peripheral is properly
configured (refer to Reference manual).
The SDA and SCL I/O requirements are met with the following restrictions: the SDA and
SCL I/O pins are “true” open-drain. When configured as open-drain, the PMOS connected
between the I/O pin and VDDIOx is disabled, but is still present. Only FTf I/O pins support
Fm+ low level output current maximum requirement. Refer to
characteristics.
All I2C I/Os embed an analog filter. refer to theTabl e 62: I2C analog filter characteristics.
Table 61. I2C timings specification (see I2C specification, rev.03, June 2007)
SymbolParameter
Standard modeFast mode Fast Mode Plus
MinMaxMinMaxMinMax
Section 6.3.14: I/O port
(1)
Unit
f
SCL
t
LOW
t
HIGH
t
r
t
f
t
HD;DAT
t
VD;DAT
t
VD;ACK
t
SU;DAT
t
HD:STA
t
SU:STA
t
SU:STO
t
BUF
C
t
SP
SCL clock frequency0100040001000KHz
Low period of the SCL clock4.7-1.3-0.5-µs
High Period of the SCL clock40.60.26-µs
Rise time of both SDA and SCL
signals
Fall time of both SDA and SCL
signals
-1000-300-120ns
-300-300-120ns
Data hold time0-0-0-µs
Data valid time-3.45
Data valid acknowledge time-3.45
(2)
(2)
-0.9
-0.9
(2)
(2)
-0.45
-0.45
Data setup time250-100-50-ns
Hold time (repeated) START
condition
Set-up time for a repeated START
condition
4.0-0.6-0.26-µs
4.7-0.6-0.26µs
Set-up time for STOP condition4.0-0.6-0.26-µs
Bus free time between a
STOP and START condition
Capacitive load for each bus line-400-400-550pF
b
Pulse width of spikes that are
suppressed by the analog filter for
4.7-1.3-0.5-µs
050
(3)
050
(3)
--ns
Standard and Fast mode
(2)
(2)
µs
µs
DS9118 Rev 1495/149
125
Electrical characteristicsSTM32F303xB STM32F303xC
MS19879V3
Rs
I2C bus
Rp
Rs
V
DD_I2C
MCU
SDA
SCL
Rp
V
DD_I2C
continued
continued
SDA
SCL
SDA
SCL
70%
30%
70%
30%
70%
30%
70%
30%
70%
30%
70%
30%
t
f
t
f
t
r
t
r
t
SU;DAT
t
HD;DAT
t
HIGH
t
VD;DAT
t
1 / f
SCL
t
LOW
9th clock
1st clock cycle
t
SU;STA
t
HD;STA
t
SP
t
VD;ACK
t
SU;STO
t
BUF
9th clock
S
r
SP
S
HD;STA
1. The I2C characteristics are the requirements from I2C bus specification rev03. They are guaranteed by design when
I2Cx_TIMING register is correctly programmed (Refer to the RM0316 reference manual).
2. The maximum tHD;DAT could be 3.45 µs, 0.9 µs and 0.45 µs for standard mode, fast mode and fast mode plus, but must
be less than the maximum of tVD;DAT or tVD;ACK by a transition time.
3. The minimum width of the spikes filtered by the analog filter is above t
SP
(max).
Table 62. I2C analog filter characteristics
(1)
SymbolParameterMinMaxUnit
t
AF
1. Guaranteed by design.
Pulse width of spikes that are
suppressed by the analog filter
50260ns
Figure 25. I2C bus AC waveforms and measurement circuit
1. Rs: Series protection resistors, Rp: Pull-up resistors, VDD_I2C: I2C bus supply.
96/149DS9118 Rev 14
STM32F303xB STM32F303xCElectrical characteristics
SPI/I2S characteristics
Unless otherwise specified, the parameters given in Tab le 63 for SPI or in Ta bl e 64 for I2S
are derived from tests performed under ambient temperature, f
supply voltage conditions summarized in
Tabl e 24.
Refer to Section 6.3.14: I/O port characteristics for more details on the input/output alternate
function characteristics (NSS, SCK, MOSI, MISO for SPI and WS, CK, SD for I2S).
Table 63. SPI characteristics
Symbol Parameter Conditions MinTypMaxUnit
(1)
frequency and VDD
PCLKx
Master mode, SPI1
2.7<VDD<3.6
Slave mode, SPI1
DD
DD
<3.6
<3.6
--
1/t
f
SCK
c(SCK)
SPI clock frequency
2.7<V
Master mode, SPI1/2/3
2<V
Slave mode, SPI1/2/3
<3.6
2<V
DD
SCK) Duty cycle of SPI clock frequency Slave mode305070%
DuCy(
t
su(NSS)
t
h(NSS)
t
w(SCKH)
t
w(SCKL)
t
su(MI)
t
su(SI)
t
h(MI)
t
h(SI)
t
a(SO)
t
dis(SO)
NSS setup timeSlave mode, SPI presc = 24*Tpclk--
NSS hold timeSlave mode, SPI presc = 22*Tpclk--
SCK high and low timeMaster mode Tpclk-2TpclkTpclk+2