STMicroelectronics STM32F207, STM32F40, STM32F215, STM32F217, STM32F41 Programming Manual

...

PM0059

Programming manual

STM32F205/215, STM32F207/217 Flash programming manual

Introduction

This programming manual describes how to program the Flash memory of STM32F205/215 and STM32F207/217 microcontrollers. For convenience, these will be referred to as STM32F20x and STM32F21x in the rest of this document unless otherwise specified.

The STM32F20x and STM32F21xembedded Flash memory can be programmed using incircuit programming or in-application programming.

The in-circuit programming (ICP) method is used to update the entire contents of the

Flash memory, using the JTAG, SWD protocol or the boot loader to load the user application into the microcontroller. ICP offers quick and efficient design iterations and eliminates unnecessary package handling or socketing of devices.

In contrast to the ICP method, in-application programming (IAP) can use any

communication interface supported by the microcontroller (I/Os, USB, CAN, UART, I etc.) to download programming data into memory. With IAP, the Flash memory can be reprogrammed while the application is running. Nevertheless, part of the application has to have been previously programmed in the Flash memory using ICP.

The Flash interface implements instruction access and data access based on the AHB protocol. It implements a prefetch buffer that speeds up CPU code execution. It also implements the logic necessary to carry out Flash memory operations (program/erase). Program/erase operations can be performed over the whole product voltage range. Read/write protections and option bytes are also implemented.

C, SPI,

June 2013 DocID15687 Rev 5 1/29

www.st.com

Contents PM0059

Contents

1 Glossary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

2 Flash memory interface . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

2.1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

2.2 Main features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

2.3 Flash memory . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

2.4 Read interface . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

2.4.1 Relation between CPU clock frequency and Flash memory read time . . 8

2.4.2 Adaptive real-time memory accelerator (ART Accelerator™) . . . . . . . . . 9

2.5 Erase and program operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11

2.5.1 Unlocking the Flash control register . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

2.5.2 Program/erase parallelism . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

2.5.3 Erase . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

2.5.4 Programming . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

2.5.5 Interrupts . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

2.6 Option bytes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

2.6.1 Description of user option bytes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

2.6.2 Programming user option bytes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

2.6.3 Read protection (RDP) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

2.6.4 Write protections . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18

2.7 One-time programmable bytes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19

2.8 Flash interface registers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20

2.8.1 Flash access control register (FLASH_ACR) . . . . . . . . . . . . . . . . . . . . 20

2.8.2 Flash key register (FLASH_KEYR) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21

2.8.3 Flash option key register (FLASH_OPTKEYR) . . . . . . . . . . . . . . . . . . . 21

2.8.4 Flash status register (FLASH_SR) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22

2.8.5 Flash control register (FLASH_CR) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23

2.8.6 Flash option control register (FLASH_OPTCR) . . . . . . . . . . . . . . . . . . . 24

2.8.7 Flash interface register map . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26

3 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27

2/29 DocID15687 Rev 5

List of tables

Table 1. Applicable products . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Table 2. Flash module organization . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

Table 3. Number of wait states according to CPU clock (HCLK) frequency . . . . . . . . . . . . . . . . . . . . 8

Table 4. Program/erase parallelism . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

Table 5. Flash interrupt requests . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Table 6. Option byte organization . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Table 7. Description of the option bytes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

Table 8. Access versus read protection level . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17

Table 9. OTP part organization. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19

Table 10. Flash register map and reset values. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26

Table 11. Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27

DocID15687 Rev 5 3/29

List of figures

Figure 1. Flash memory interface connection inside system architecture . . . . . . . . . . . . . . . . . . . . . . 6

Figure 2. Sequential 32-bit instruction execution . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

Figure 3. RDP levels . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18

4/29 DocID15687 Rev 5

PM0059 Glossary

1 Glossary

This section gives a brief definition of acronyms and abbreviations used in this document:

• The CPU core integrates two debug ports:

– JTAG debug port (JTAG-DP) provides a 5-pin standard interface based on the

Joint Test Action Group (JTAG) protocol.

– SWD debug port (SWD-DP) provides a 2-pin (clock and data) interface based on

the Serial Wire Debug (SWD) protocol.

For both the JTAG and SWD protocols, please refer to the Cortex M3 Technical Reference Manual

• Word: data/instruction of 32-bit length.

• Half word: data/instruction of 16-bit length.

• Byte: data of 8-bit length.

• Double word: data of 64-bit length.

• IAP (in-application programming): IAP is the ability to reprogram the Flash memory of a

microcontroller while the user program is running.

• ICP (in-circuit programming): ICP is the ability to program the Flash memory of a microcontroller using the JTAG protocol, the SWD protocol or the bootloader while the device is mounted on the user application board.

• I-Code: this bus connects the Instruction bus of the CPU core to the Flash instruction interface. Prefetch is performed on this bus.

• D-Code: this bus connects the D-Code bus (literal load and debug access) of the CPU to the Flash data interface.

• Option bytes: product configuration bits stored in the Flash memory.

• OBL: option byte loader.

• AHB: advanced high-performance bus.

• CPU: refers to the Cortex-M3 core.

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Flash memory interface PM0059

2 Flash memory interface

2.1 Introduction

The Flash memory interface manages CPU AHB I-Code and D-Code accesses to the 1 Mbyte (64 Kbit × 128 bits) Flash memory. It implements the erase and program Flash memory operations and the read and write protection mechanisms.

The Flash memory interface accelerates code execution with a system of instruction prefetch and cache lines.

2.2 Main features

• Flash memory read operations

• Flash memory program/erase operations

• Read / write protections

• Prefetch on I-Code

• 64 cache lines of 128 bits on I-Code

• 8 cache lines of 128 bits on D-Code

Figure 1 shows the Flash memory interface connection inside the system architecture.

Figure 1. Flash memory interface connection inside system architecture

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PM0059 Flash memory interface

2.3 Flash memory

The Flash memory has the following main features:

• Capacity up to 1 Mbyte

• 128 bits wide data read

• Byte, half-word, word and double word write

• Sector and mass erase

• Memory organization

The Flash memory is organized as follows:

– Main memory block containing 4 sectors of 16 Kbytes, 1 sector of 64 Kbytes, and

7 sectors of 128 Kbytes

– System memory used to boot the device in System memory boot mode.

This area is reserved for STMicroelectronics and contains the bootloader which is used to reprogram the Flash memory through one of the following interfaces: USART1, USART3, CAN2, USB OTG FS in Device mode (DFU: device firmware upgrade). The bootloader is programmed by ST when the device is manufactured, and protected against spurious write/erase operations.

– 512 OTP (one-time programmable) bytes for user data

The OTP area contains 16 additional bytes used to lock the corresponding OTP data block.

– Option bytes: read and write protections, BOR level, watchdog software/hardware

and reset when the device is in Standby or Stop mode.

• Low power modes (for details refer to the Power control (PWR) section of the reference manual)

Table 2. Flash module organization

Block Name Block base addresses Size

Sector 0 0x0800 0000 - 0x0800 3FFF 16 Kbyte

Sector 1 0x0800 4000 - 0x0800 7FFF 16 Kbyte

Sector 2 0x0800 8000 - 0x0800 BFFF 16 Kbyte

Sector 3 0x0800 C000 - 0x0800 FFFF 16 Kbyte

Sector 4 0x0801 0000 - 0x0801 FFFF 64 Kbyte

Main memory

System memory 0x1FFF 0000 - 0x1FFF 77FF 30 Kbyte

OTP area 0x1FFF 7800 - 0x1FFF 7A0F 528 bytes

Option bytes 0x1FFF C000 - 0x1FFF C00F 16 bytes

Sector 5 0x0802 0000 - 0x0803 FFFF 128 Kbyte

Sector 6 0x0804 0000 - 0x0805 FFFF 128 Kbyte

. . .

Sector 11 0x080E 0000 - 0x080F FFFF 128 Kbyte

. . .

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Flash memory interface PM0059

2.4 Read interface

2.4.1 Relation between CPU clock frequency and Flash memory read time

To correctly read data from Flash memory, the number of wait states (LATENCY) must be correctly programmed in the Flash access control register (FLASH_ACR) according to the

frequency of the CPU clock (HCLK) and the supply voltage of the device. Table 3 shows the

correspondence between wait states and CPU clock frequency.

The prefetch must be disabled when the supply voltage is below 2.1 V.

Table 3. Number of wait states according to CPU clock (HCLK) frequency

HCLK (MHz)

Wait st ate s (WS)

(LATENCY)

0 WS (1 CPU cycle) 0 <HCLK≤ 30 0 <HCLK ≤ 24 0 <HCLK ≤ 18 0 < HCLK ≤ 16

1 WS (2 CPU cycles) 30 <HCLK ≤ 60 24 < HCLK≤ 48 18 <HCLK ≤ 36 16 <HCLK ≤ 32

2 WS (3 CPU cycles) 60 <HCLK ≤ 90 48 < HCLK≤ 72 36 < HCLK≤ 54 32 < HCLK≤ 48

3 WS (4 CPU cycles) 90 <HCLK ≤ 120 72 < HCLK≤ 96 54 <HCLK ≤ 72 48 < HCLK≤ 64

4 WS (5 CPU cycles)

V oltage range

2.7 V - 3.6 V

Voltage range

2.4 V - 2.7 V

96 < HCLK≤ 120 72 < HCLK≤ 90 64 < HCLK≤ 80

Voltage range

2.1 V - 2.4 V

Voltage range

1.8 V - 2.1 V

(1)

5 WS (6 CPU cycles)

6 WS (7 CPU cycles)

7 WS (8 CPU cycles)

1. If IRROFF is set to VDD on STM32F20xx devices, this value can be lowered to 1.65 V when the device operates in a reduced temperature range.

90 < HCLK≤ 108 80 < HCLK≤ 96

108 < HCLK≤ 120 96 < HCLK≤ 112

112 < HCLK≤ 120

After reset, the CPU clock frequency is 16 MHz and 0 wait state (WS) is configured in the FLASH_ACR register.

It is highly recommended to use the following software sequences to tune the number of wait states needed to access the Flash memory with the CPU frequency.

Increasing the CPU frequency

1. Program the new number of wait states to the LATENCY bits in the FLASH_ACR register

2. Check that the new number of wait states is taken into account to access the Flash memory by reading the FLASH_ACR register

3. Modify the CPU clock source by writing the SW bits in the RCC_CFGR register

4. If needed, modify the CPU clock prescaler by writing the HPRE bits in RCC_CFGR

5. Check that the new CPU clock source or/and the new CPU clock prescaler value is/are taken into account by reading the clock source status (SWS bits) or/and the AHB prescaler value (HPRE bits), respectively, in the RCC_CFGR register.

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Decreasing the CPU frequency

1. Modify the CPU clock source by writing the SW bits in the RCC_CFGR register

2. If needed, modify the CPU clock prescaler by writing the HPRE bits in RCC_CFGR

3. Check that the new CPU clock source or/and the new CPU clock prescaler value is/are taken into account by reading the clock source status (SWS bits) or/and the AHB prescaler value (HPRE bits), respectively, in the RCC_CFGR register

4. Program the new number of wait states to the LATENCY bits in FLASH_ACR

5. Check that the new number of wait states is used to access the Flash memory by reading the FLASH_ACR register

Note: A change in CPU clock configuration or wait state (WS) configuration may not be effective

straight away. To make sure that the current CPU clock frequency is the one you have configured, you can check the AHB prescaler factor and clock source status values. To make sure that the number of WS you have programmed is effective, you can read the FLASH_ACR register.

2.4.2 Adaptive real-time memory accelerator (ART Accelerator™)

The proprietary Adaptive real-time (ART) memory accelerator is optimized for STM32 industry-standard ARM

Cortex™-M3 processors. It balances the inherent performance advantage of the ARM Cortex-M3 over Flash memory technologies, which normally requires the processor to wait for the Flash memory at higher operating frequencies.

To release the processor full performance of 150 DMIPS, the accelerator implements an instruction prefetch queue and branch cache which increases program execution speed from the 128-bit Flash memory. Based on CoreMark benchmark, the performance achieved thanks to the ART accelerator is equivalent to 0 wait state program execution from Flash memory at a CPU frequency up to 120 MHz.

Instruction prefetch

Each Flash memory read operation provides 128 bits from either four instructions of 32 bits or 8 instructions of 16 bits according to the program launched. So, in case of sequential code, at least four CPU cycles are needed to execute the previous read instruction line. Prefetch on the I-Code bus can be used to read the next sequential instruction line from the Flash memory while the current instruction line is being requested by the CPU. Prefetch is enabled by setting the PRFTEN bit in the FLASH_ACR register. This feature is useful if at least one wait state is needed to access the Flash memory.

Figure 2 shows the execution of sequential 32-bit instructions with and without prefetch

when 3 WSs are needed to access the Flash memory.

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Flash memory interface PM0059

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When the code is not sequential (branch), the instruction may not be present in the currently used instruction line or in the prefetched instruction line. In this case (miss), the penalty in terms of number of cycles is at least equal to the number of wait states.

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PM0059 Flash memory interface

Instruction cache memory

To limit the time lost due to jumps, it is possible to retain 64 lines of 128 bits in an instruction cache memory. This feature can be enabled by setting the instruction cache enable (ICEN) bit in the FLASH_ACR register. Each time a miss occurs (requested data not present in the currently used instruction line, in the prefetched instruction line or in the instruction cache memory), the line read is copied into the instruction cache memory. If some data contained in the instruction cache memory are requested by the CPU, they are provided without inserting any delay. Once all the instruction cache memory lines have been filled, the LRU (least recently used) policy is used to determine the line to replace in the instruction memory cache. This feature is particularly useful in case of code containing loops.

Data management

Literal pools are fetched from Flash memory through the D-Code bus during the execution stage of the CPU pipeline. The CPU pipeline is consequently stalled until the requested literal pool is provided. To limit the time lost due to literal pools, accesses through the AHB databus D-Code have priority over accesses through the AHB instruction bus I-Code.

If some literal pools are frequently used, the data cache memory can be enabled by setting the data cache enable (DCEN) bit in the FLASH_ACR register. This feature works like the instruction cache memory, but the retained data size is limited to 8 rows of 128 bits.

Note: Data in user configuration sector are not cacheable.

2.5 Erase and program operations

For any Flash memory program operation (erase or program), the CPU clock frequency (HCLK) must be at least 1 MHz. The contents of the Flash memory are not guaranteed if a device reset occurs during a Flash memory operation.

During a write/erase operation to the Flash memory, any attempt to read the Flash memory will caused the bus to stall. Read operations are processed correctly once the program operation has completed. This means that code or data fetches cannot be performed while a write/erase operation is ongoing.

2.5.1 Unlocking the Flash control register

After reset, write is not allowed in the Flash control register (FLASH_CR) to protect the Flash memory against possible unwanted operations due, for example, to electric disturbances. The following sequence is used to unlock this register:

1. Write KEY1 = 0x45670123 in the Flash key register (FLASH_KEYR)

2. Write KEY2 = 0xCDEF89AB in the Flash key register (FLASH_KEYR)

Any wrong sequence will return a bus error and lock up the FLASH_CR register until the next reset.

The FLASH_CR register can be locked again by software by setting the LOCK bit in the FLASH_CR register.

Note: The FLASH_CR register is not accessible in write mode when the BSY bit in the FLASH_SR

register is set. Any attempt to write to it with the BSY bit set will cause the AHB bus to stall until the BSY bit is cleared.

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Flash memory interface PM0059

2.5.2 Program/erase parallelism

The Parallelism size is configured through the PSIZE field in the FLASH_CR register. It represents the number of bytes to be programmed each time a write operation occurs to the Flash memory. PSIZE is limited by the supply voltage and by whether the external V supply is used or not. It must therefore be correctly configured in the FLASH_CR register before any programming/erasing operation.

A Flash memory erase operation can only be performed by sectors, bank or for the whole Flash memory (mass erase). The erase time depends on PSIZE programmed value. For more details on the erase time, refer to the electrical characteristics section of the device datasheet.

V oltage range

2.7 - 3.6 V

with External

Parallelism size

PSIZE(1:0) 11 10 01 00

x64 x32 x16 x8

Ta bl e 4. Progra m/e ras e parallelism

Voltage range

2.7 - 3.6 V

Voltage range

2.4 - 2.7 V

V oltage range

2.1 - 2.4 V

Voltage range

1.8 V - 2.1 V

(1)

1. If IRROFF is set to VDD on STM32F20xx devices, this value can be lowered to 1.65 V when the device

operates in a reduced temperature range.

Note: Any program or erase operation started with in consistent program p arallelism/volt age range

settings may lead to unpredicted results. Even if a subsequent read operation indicates th at the logical value was effectively written to the memory, this value may not be retained.

T o use V

, an external high-voltage supply (between 8 and 9 V) must be applied to the VPP

pad. The external supply must be able to sustain this voltage range even if the DC consumption exceeds 10 mA. It is advised to limit the use of VPP to initial programming on the factory line. The V

supply must not be applied for more than an hour, otherwise the

Flash memory might be damaged.

2.5.3 Erase

The Flash memory erase operation can be performed at sector level or on the whole Flash memory (Mass Erase). Mass Erase does not affect the OTP sector or the configuration sector.

Sector Erase

To erase a sector, follow the procedure below:

1. Check that no Flash memory operation is ongoing by checking the BSY bit in the

FLASH_SR register

2. Set the SER bit and select the sector (out of the 12 sectors in the main memory block)

you wish to erase (SNB) in the FLASH_CR register

3. Set the STRT bit in the FLASH_CR register

4. Wait for the BSY bit to be cleared

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PM0059 Flash memory interface

Mass Erase

To perform Mass Erase, the following sequence is recommended:

1. Check that no Flash memory operation is ongoing by checking the BSY bit in the

FLASH_SR register

2. Set the MER bit in the FLASH_CR register

3. Set the STRT bit in the FLASH_CR register

4. Wait for the BSY bit to be cleared

2.5.4 Programming

Standard programming

The Flash memory programming sequence is as follows:

1. Check that no main Flash memory operation is ongoing by checking the BSY bit in the

FLASH_SR register.

2. Set the PG bit in the FLASH_CR register

3. Perform the data write operation(s) to the desired memory address (inside main

memory block or OTP area):

– Byte access in case of x8 parallelism

– Half-word access in case of x16 parallelism

– Word access in case of x32 parallelism

– Double word access in case of x64 parallelism

4. Wait for the BSY bit to be cleared

Note: Successive write operations are possible without the need of an erase operation when

changing bits from ‘1’ to ‘0’. Writing ‘1’ requires a Flash memory erase operation. If an erase and a program operation are requested simultane ously, the erase operation is

performed first.

Programming errors

It is not allowed to program data to the Flash memory that would cross the 128-bit row boundary. In such a case, the write operation is not performed and a program alignment error flag (PGAERR) is set in the FLASH_SR register.

The write access type (byte, half-word, word or double word) must correspond to the type of parallelism chosen (x8, x16, x32 or x64). If not, the write operation is not performed and a program parallelism error flag (PGPERR) is set in the FLASH_SR register.

If the standard programming sequence is not respected (for example, if there is an attempt to write to a Flash memory address when the PG bit is not set), the operation is aborted and a program sequence error flag (PGSERR) is set in the FLASH_SR register.

Programming and caches

If a Flash memory write access concerns some data in the data cache, the Flash write access modifies the data in the Flash memory and the data in the cache.

If an erase operation in Flash memory also concerns data in the data or instruction cache, you have to make sure that these data are rewritten before they are accessed during code

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Flash memory interface PM0059

execution. If this cannot be done safely, it is recommended to flush the caches by setting the DCRST and ICRST bits in the FLASH_CR register.

Note: The I/D cache should be flushed only when it is disabled (I/DCEN = 0).

2.5.5 Interrupts

Setting the end of operation interrupt enable bit (EOPIE) in the FLASH_CR register enables interrupt generation when an erase or program operation ends, that is when the busy bit (BSY) in the FLASH_SR register is cleared (operation completed, correctly or not). In this case, the end of operation (EOP) bit in the FLASH_SR register is set.

If an error occurs during a program or erase operation request, one of the following error flags is set in the FLASH_SR register:

• PGAERR, PGPERR, PGSERR (Program error flags)

• WRPERR (Protection error flag)

In this case, if the error interrupt enable bit (ERRIE) is set in the FLASH_SR register, an interrupt is generated and the operation error bit (OPERR) is set in the FLASH_SR register.

Note: If several successive errors are detected (for example, in case of DMA transfer to the Flash

memory), the error flags cannot be cleared until the end of the successive write requests.

Refer to Table 5: Flash interrupt requests for summary of Flash interrupt request.

Table 5. Flash interrupt requests

Interrupt events Event flags Enable control bits

End of operation EOP EOPIE

Write protection error WRPERR ERRIE

Programming error PGAERR, PGPERR, PGSERR ERRIE

2.6 Option bytes

2.6.1 Description of user option bytes

The option bytes are configured by the end user depending on the application requirements.

Table 6 shows the organization of these bytes inside the user configuration sector.

Address [63:16] [15:0]

0x1FFF C000 Reserved ROP & user option bytes (RDP & USER)

0x1FFF C008 Reserved Write protections nWRP

Table 6. Option byte organization

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RDP: Read protection option byte.

The read protection is used to protect the software code stored in Flash memory.

0xAA: Level 0, no protection

Bits 15:8

USER: User option byte

This byte is used to configure the following features: – Select the watchdog event: Hardware or software – Reset event when entering the Stop mode – Reset event when entering the Standby mode

Bit 7

Bit 6

Bit 5

Bit 4 0x1: Not used

Bits 3:2

Bits 1:0 0x1: Not used

0xCC: Level 2, chip protection (debug and boot from RAM features disabled) Others: Level 1, read protection of memories (debug features limited)

nRST_STDBY

nRST_STOP

WDG_SW

BOR_LEV: BOR reset Level

Table 7. Description of the option bytes

Option bytes (word, address 0x1FFF C000)

0: Reset generated when entering the Standby mode 1: No reset generated

0: Reset generated when entering the Stop mode 1: No reset generated

0: Hardware watchdog 1: Software watchdog

These bits contain the supply level threshold that activates/releases the reset. They can be written to program a new BOR level value into Flash memory. 00: BOR Level 3 (VBOR3). reset threshold level from 2.70 to 3.60 V 01: BOR Level 2 (VBOR2). reset threshold level from 2.40 to 2.70 V 10: BOR Level 1 (VBOR1). reset threshold level from 2.10 to 2.40 V 11: BOR off (VBOR0), reset threshold level from 1.8 to 2.10 V

Option bytes (word, address 0x1FFF C008)

Bits 15:12 0xF: Not used

nWRP: Flash memory write protection option bytes

Sectors 0 to 11 can be write protected.

Bit i (0 ≤ i ≤ 11)

nWRPi

0: Write protection active on sector i 1: Write protection not active on sector i

2.6.2 Programming user option bytes

To run any operation on this sector, the option lock bit (OPTLOCK) in the Flash option control register (FLASH_OPTCR) must be cleared. To be allowed to clear this bit, you have to perform the following sequence:

1. Write OPTKEY1 = 0x0819 2A3B in the Flash option key register (FLASH_OPTKEYR)

2. Write OPTKEY2 = 0x4C5D 6E7F in the Flash option key register (FLASH_OPTKEYR)

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Flash memory interface PM0059

The user option bytes can be protected against unwanted erase/program operations by setting the OPTLOCK bit by software.

Modifying user option bytes

To modify the user option value, follow the sequence below:

1. Check that no Flash memory operation is ongoing by checking the BSY bit in the FLASH_SR register

2. Write the desired option value in the FLASH_OPTCR register

3. Set the option start bit (OPTSTRT) in the FLASH_OPTCR register

4. Wait for the BSY bit to be cleared

Note: The value of an option is automatically modified by first erasing the user configuration sector

and then programming all the option by tes wi th the value s cont ained in the FLASH_OPTCR register.

2.6.3 Read protection (RDP)

The user area in the Flash memory can be protected against read operations by an entrusted code. Three read protection levels are defined:

• Level 0: no read protection

When the read protection level is set to Level 0 by writing 0xAA into the read protection option byte (RDP), all read/write operations (if no write protection is set) from/to the Flash memory or the backup SRAM are possible in all boot configurations (Flash user boot, debug or boot from RAM).

• Level 1: memory read protection.

It is the default read protection level after option byte erase. The read protection Level 1 is activated by writing any value (except for 0xAA and 0xCC used to set Level 0 and Level 2, respectively) into the RDP option byte. When the read protection Level 1 is set:

– No access (read, erase, program) to Flash memory or backup SRAM can be

performed while the debug feature is connected or while booting from RAM or system memory bootloader. A bus error is generated in case of read request.

– When booting from Flash memory, accesses (read, erase, program) to Flash

memory and backup SRAM from user code are allowed.

When Level 1 is active, programming the protection option byte (RDP) to Level 0 causes the Flash memory and the backup SRAM to be mass-erased. As a result the user code area is cleared before the read protection is removed. The mass erase only erases the user code area. The other option bytes including write protections remain

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unchanged from before the mass-erase operation. The OTP area is not affected by mass erase and remains unchanged.

Mass erase is performed only when Level 1 is active and Level 0 requested. When the protection level is increased (0->1, 1->2, 0->2) there is no mass erase.

• Level 2: Disable debug/chip read protection

When the read protection Level 2 is set by writing 0xCC to the RDP option byte:

– All protections provided by Level 1 are active.

– Booting from system memory is not allowed anymore.

– JTAG, SWV (single-wire viewer) are disabled.

– User option bytes can no longer be changed.

– When booting from Flash memory, accesses (read, erase and program) to Flash

memory and backup SRAM from user code are allowed.

Memory read protection Level 2 is an irreversible operation. When Level 2 is activated, the level of protection cannot be decreased to Level 0 or Level 1.

Note: The JTAG por t is permanently disable d when Level 2 is active ( acting as a JTAG fuse). As a

consequence, boundary scan cannot be performed. STMicroelectronics is not able to perform analysis on defective parts on which the Level 2 protection has been set.

Figure 3 shows how to go from one RDP level to another, and Table 8 summarizes the

memory accesses versus the protection level.

Table 8. Access versus read protection level

Debug features, Boot from RAM or

Memory area

Main Flash Memory

and Backup SRAM

Option Bytes

OTP

1. The main Flash memory and backup SRAM are only erased when the RDP changes from level 1 to 0. The OTP area remains unchanged.

Protection

Level

Level 1 NO NO

Level 2 NO YES

Level 1 YES YES

Level 2 NO NO

Level 1 NO NA YES NA

Level 2 NO NA YES NA

from System memory bootloader

Read Write Erase Read Write Erase

(1)

Booting from Flash memory

YES

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Flash memory interface PM0059

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Figure 3. RDP levels

2.6.4 Write protections

The user sectors (0 to 11) in Flash memory can be protected against unwanted write operations due to loss of program counter contexts. When the not write protection bit in sector i (nWRPi, 0 ≤ i ≤ 11) is low, the corresponding sector cannot be erased or programmed. Consequently, a mass erase cannot be performed if one of the sectors is write-protected.

If an erase/program operation to a write-protected part of the Flash memory is attempted (sector protected by write protection bit, OTP part locked or part of the Flash memory that can never be written like the ICP), the write protection error flag (WRPERR) is set in the FLASH_SR register.

Note: When the memory read protection level is selected (RDP level = 1), it is not possible to

program or erase Flash memory sector i if the CPU debug features are co nnected ( JTAG or single wire) or boot code is being executed from RAM, even if nWRPi = 1.

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PM0059 Flash memory interface

Write protection error flag

If an erase/program operation to a write protected area of the Flash memory is performed, the Write Protection Error flag (WRPERR) is set in the FLASH_SR register.

If an erase operation is requested, the WRPERR bit is set when:

• Mass or sector erase are configured (MER or MER/MER1 and SER = 1)

• A sector erase is requested and the Sector Number SNB field is not valid

• A mass erase is requested while at least one of the user sector is write protected by

option bit (MER or MER/MER1 = 1 and nWRPi = 0 with 0 ≤ i ≤ 11 bits in the FLASH_OPTCRx register

• The Flash memory is readout protected and an intrusion is detected.

If a program operation is requested, the WRPERR bit is set when:

• A write operation is performed on system memory or on the reserved part of the user specific sector.

• A write operation is performed to the user configuration sector

• A write operation is performed on a sector write protected by option bit.

• A write operation is requested on an OTP area which is already locked

• The Flash memory is read protected and an intrusion is detected.

2.7 One-time programmable bytes

Table 9 shows the organization of the one-time programmable (OTP) part of the OTP area.

Block [128:96] [95:64] [63:32] [31:0] Address byte 0

. . .

Lock block

OTP0 OTP0 OTP0 OTP0 0x1FFF 7800

OTP0 OTP0 OTP0 OTP0 0x1FFF 7810

OTP1 OTP1 OTP1 OTP1 0x1FFF 7820

OTP1 OTP1 OTP1 OTP1 0x1FFF 7830

OTP15 OTP15 OTP15 OTP15 0x1FFF 79E0

OTP15 OTP15 OTP15 OTP15 0x1FFF 79F0

LOCKB15 ...

LOCKB12

The OTP area is divided into 16 OTP data blocks of 32 bytes and one lock OTP block of 16 bytes. The OTP data and lock blocks cannot be erased. The lock block contains 16 bytes LOCKBi (0 ≤ i ≤ 15) to lock the corresponding OTP data block (blocks 0 to 15). Each OTP data block can be programmed until the value 0x00 is programmed in the corresponding OTP lock byte. The lock bytes must only contain 0x00 and 0xFF values, otherwise the OTP bytes might not be taken into account correctly.

Table 9. OTP part organization

. . .

LOCKB11 ...

LOCKB8

LOCKB7 ...

LOCKB4

LOCKB3 ...

LOCKB0

. . .

0x1FFF 7A00

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Flash memory interface PM0059

2.8 Flash interface registers

2.8.1 Flash access control register (FLASH_ACR)

The Flash access control register is used to enable/disable the acceleration features and control the Flash memory access time according to CPU frequency.

Address offset: 0x00 Reset value: 0x0000 0000

Access: no wait state, word, half-word and byte access

31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16

15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0

Reserved

DCRST ICRST DCEN ICEN PRFTEN

rwwrwrw rw rwrwrw

Bits 31:11 Reserved, must be kept cleared.

Bit 12 DCRST: Data cache reset

0: Data cache is not reset 1: Data cache is reset This bit can be written only when the D cache is disabled.

Bit 11 ICRST: Instruction cache reset

0: Instruction cache is not reset 1: Instruction cache is reset

This bit can be written only when the I cache is disabled.

Bit 10 DCEN: Data cache enable

0: Data cache is disabled 1: Data cache is enabled

Reserved

LATENCY

Bit 9 ICEN: Instruction cache enable

0: Instruction cache is disabled 1: Instruction cache is enabled

Bit 8 PRFTEN: Prefetch enable

0: Prefetch is disabled 1: Prefetch is enabled

Bits 7:3 Reserved, must be kept cleared.

Bits 2:0 LATENCY: Latency

These bits represent the ratio of the CPU clock period to the Flash memory access time. 000: Zero wait state 001: One wait state

010: Two wait states 011: Three wait states

100: Four wait states 101: Five wait states 110: Six wait states 111: Seven wait states

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2.8.2 Flash key register (FLASH_KEYR)

The Flash key register is used to allow access to the Flash control register and so, to allow program and erase operations.

Address offset: 0x04 Reset value: 0x0000 0000

Access: no wait state, word access

31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16

wwwwww w w w w w w w w w w

1514131211109876543210

wwwwww w w w w w w w w w w

KEY[31:16]

KEY[15:0]

Bits 31:0 FKEYR: FPEC key

The following values must be programmed consecutively to unlock the FLASH_CR register and allow programming/erasing it:

a) KEY1 = 0x45670123 b) KEY2 = 0xCDEF89AB

2.8.3 Flash option key register (FLASH_OPTKEYR)

The Flash option key register is used to allow program and erase operations in the user configuration sector.

Address offset: 0x08 Reset value: 0x0000 0000

Access: no wait state, word access

31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16

wwwwww w w w w w ww w w w

15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0

wwwwww w w w w w ww w w w

OPTKEYR[31:16

OPTKEYR[15:0]

Bits 31:0 OPTKEYR: Option byte key

The following values must be programmed consecutively to unlock the FLASH_OPTCR register and allow programming it:

a) OPTKEY1 = 0x08192A3B b) OPTKEY2 = 0x4C5D6E7F

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2.8.4 Flash status register (FLASH_SR)

The Flash status register gives information on ongoing program and erase operations.

Address offset: 0x0C Reset value: 0x0000 0000

Access: no wait state, word, half-word and byte access

31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16

15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0

Reserved

Bits 31:17 Reserved, must be kept cleared.

Bit 16 BSY: Busy

This bit indicates that a Flash memory operation is in progress. It is set at the beginning of a Flash memory operation and cleared when the operation finishes or an error occurs.

0: no Flash memory operation ongoing 1: Flash memory operation ongoing

PGSERR PGPERR PGAERR WRPERR

rc_w1 rc_w1 rc_w1 rc_w1 rc_w1 rc_w1

Reserved

OPERR EOP

BSY

Bits 15:8 Reserved, must be kept cleared.

Bit 7 PGSERR: Programming sequence error

Set by hardware when a write access to the Flash memory is performed by the code while the control register has not been correctly configured.

Cleared by writing 1.

Bit 6 PGPERR: Programming parallelism error

Set by hardware when the size of the access (byte, half-word, word, double word) during the program sequence does not correspond to the parallelism configuration PSIZE (x8, x16, x32, x64). Cleared by writing 1.

Bit 5 PGAERR: Programming alignment error

Set by hardware when the data to program cannot be contained in the same 128-bit Flash memory row. Cleared by writing 1.

Bit 4 WRPERR: Write protection error

Set by hardware when an address to be erased/programmed belongs to a write-protected part of the Flash memory. Cleared by writing 1.

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Bits 3:2 Reserved, must be kept cleared.

Bit 1 OPERR: Operation error

Set by hardware when a flash operation (programming / erase) request is detected and can not be run because of parallelism, alignment, sequence or write protection error. This bit is set only if error interrupts are enabled (ERRIE = 1).

Bit 0 EOP: End of operation

Set by hardware when one or more Flash memory operations (program/erase) has/have completed successfully. It is set only if the end of operation interrupts are enabled (EOPIE =

1). Cleared by writing a 1.

2.8.5 Flash control register (FLASH_CR)

The Flash control register is used to configure and start Flash memory operations.

Address offset: 0x10

Reset value: 0x8000 0000

Access: no wait state when no Flash memory operation is ongoing, word, half-word and byte access.

31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16

LOCK

rs rw rw rs

15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0

Reserved

ERRIE EOPIE

PSIZE[1:0]

rw rw rw rw rw rw rw rw rw

Bit 31 LOCK: Lock

Write to 1 only. When it is set, this bit indicates that the FLASH_CR register is locked. It is cleared by hardware after detecting the unlock sequence. In the event of an unsuccessful unlock operation, this bit remains set until the next reset.

Bits 31:26 Reserved, must be kept cleared.

Bit 25 ERRIE: Error interrupt enable

This bit enables the interrupt generation when the OPERR bit in the FLASH_SR register is set to 1.

0: Error interrupt generation disabled 1: Error interrupt generation enabled

Bit 24 EOPIE: End of operation interrupt enable

This bit enables the interrupt generation when the EOP bit in the FLASH_SR register goes to 1. 0: Interrupt generation disabled 1: Interrupt generation enabled

Bits 23:17 Reserved, must be kept cleared.

Bit 16 STRT: Start

This bit triggers an erase operation when set. It is set only by software and cleared when the BSY bit is cleared.

Reserv

Reserved

SNB[3:0] MER SER PG

STRT

Bits 15:10 Reserved, must be kept cleared.

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Bits 9:8 PSIZE: Program size

These bits select the program parallelism. 00 program x8 01 program x16

10 program x32 11 program x64

Bit 7 Reserved, must be kept cleared.

Bits 6:3 SNB: Sector number

These bits select the sector to erase. 0000 sector 0

0001 sector 1 ... 1011 sector 11 Others not allowed

Bit 2 MER: Mass Erase

Erase activated for all user sectors.

Bit 1 SER: Sector Erase

Sector Erase activated.

Bit 0 PG: Programming

Flash programming activated.

2.8.6 Flash option control register (FLASH_OPTCR)

The FLASH_OPTCR register is used to modify the user option bytes.

Address offset: 0x14

Reset value: 0x0FFF AAED. The option bits are loaded with values from Flash memory at reset release.

Access: no wait state when no Flash memory operation is ongoing, word, half-word and byte access.

31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16

1514131211109876543210

rw rw rw rw rw rw rw rw rw rw rw rw rw rs rs

Reserved

nWRP[11:0]

rw rw rw rw rw rw rw rw rw rw rw rw

nRST_

RDP[7:0]

STDBY

nRST_

STOP

WDG_

Reserv

BOR_LEV

OPTSTRTOPTLO

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Bits 31:28 Reserved, must be kept cleared.

Bits 27:16 nWRP: Not write protect

These bits contain the value of the write-protection option bytes after reset. They can be written to program a new write protect value into Flash memory.

0: Write protection active 1: Write protection not active

Bits 15:8 RDP: Read protect

These bits contain the value of the read-protection option level after reset. They can be written to program a new read protection value into Flash memory. 0xAA: Level 0, read protection not active 0xCC: Level 2, chip read protection active Others: Level 1, read protection of memories active

Bits 7:5 USER: User option bytes

These bits contain the value of the user option byte after reset. They can be written to program a new user option byte value into Flash memory. Bit 7: nRST_STDBY Bit 6: nRST_STOP Bit 5: WDG_SW

Note: When changing the WDG mode from hardware to software or from software to

hardware, a system reset is required to make the change effective.

Bit 4 Reserved, must be kept cleared.

Bits 3:2 BOR_LEV: BOR reset Level

These bits contain the supply level threshold that activates/releases the reset. They can be written to program a new BOR level. By default, BOR is off. When the supply voltage (V drops below the selected BOR level, a device reset is generated.

00: BOR Level 3 (VBOR3), reset threshold level 3 01: BOR Level 2 (VBOR2), reset threshold level 2 10: BOR Level 1 (VBOR1), reset threshold level 1 11: BOR off (VBOR0), POR/PDR reset threshold level is applied.

Note: For full details about BOR characteristics, refer to the “Electrical characteristics” section

in the device datasheet.

Bit 1 OPTSTRT: Option start

This bit triggers a user option operation when set. It is set only by software and cleared when the BSY bit is cleared.

Bit 0 OPTLOCK: Option lock

Write to 1 only. When this bit is set, it indicates that the FLASH_OPTCR register is locked. This bit is cleared by hardware after detecting the unlock sequence.

In the event of an unsuccessful unlock operation, this bit remains set until the next reset.

)

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Flash memory interface PM0059

2.8.7 Flash interface register map

Offset Register

0x00

0x04

0x08

0x0C

0x10

FLASH_ACR

Reset value 00000 00 0

FLASH_KEY

Reset value 00000000000000000000000000000000

FLASH_OPT

KEYR

Reset value 00000000000000000000000000000000

FLASH_SR

Reset value 0 0000 0 0

FLASH_CR

Reset value 1 0 0 00 0000 00

Table 10. Flash register map and reset values

31302928272625242322212019181716151413

Reserved

KEY[31:16] KEY[15:0]

OPTKEYR[31:16] OPTKEYR[15:0]

Reserved

LOCK

Reserved

EOPIE

BSY

STRT

Reserved

121110

DCRST

Reserved

987654321

ICEN

DCEN

ICRST

PSIZ E[1:0

Reserved

PRFTEN

PGSERR

PGPERR

]

SNB[3:0]

Reserved

LATENC

Rese

rved

PGAERR

WRPERR

MER

OPERR

SER

EOP

0x14

FLASH_OPT

Reset value 11111111111110101010111 110 1

Reserved

nWRP[11:0] RDP[7:0]

WDG_SW

nRST_STOP

nRST_STDBY

BOR_LEV

Reserved

OPTSTRT

OPTLOCK

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3 Revision history

Table 11. Document revision history

Date Revision Changes

Updated memory organization in Section 2.3: Flash memory, and

replace user-specific block by OTP area.

Updated addresses in Table 6: Option byte organization. Definition of BOR_LEV[3:2] bits updated in Table 7: Description of

the option bytes and Section 2.8.6: Flash option control register

24-Jun-2010 1

(FLASH_OPTCR). Modified FLASH_OPTCR reset value in Section 2.8.6: Flash option control register (FLASH_OPTCR) and Table 10: Flash register map and reset values. Updated

OPTLOCK definition.

Updated definition of ERRIE bit in Section 2.8.5: Flash control

Updated size of OTP area, and option byte base address and size in

Table 2: Flash module organization.

Changed 1.62 to 2.1 V range to 1.8 to 2.1 V, added Note 1 as well as

wait states 4 to 7 in TTable 3: Number of wait states according to

CPU clock (HCLK) frequency.

Updated Table 4: Program/erase parallelism. Updated BOR_LEVEL description in Table 7: Description of the

option bytes.

Renamed FLASH_FOCR, FLASH_OPTCR in Section 2.6.2:

Programming user option bytes.

09-Dec-2010 2

Updated Level 1 and Level 2 descriptions in Section 2.6.3: Read

protection (RDP).

Updated LATENCY bits in Section 2.8.1: Flash access control

Changed access type to bits 0 to 7 to rc-1, and OPERR description

in Section 2.8.4: Flash status register (FLASH_SR). Changed access type to bits 16 and 31 to rs in Section 2.8.5:

Flash control register (FLASH_CR).

Changed access type to bits 0 and 1 to rs, and added note related to

bit 7 to 5 in Section 2.8.6: Flash option control register

(FLASH_OPTCR).

30-Mar-2011 3

Updated OTP area in Section 2.3: Flash memory. Updated Section 2.5: Erase and program operations to mention

the fact that read operations cannot be performed during write/erase operations.

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Revision history PM0059

Table 11. Document revision history (continued)

Date Revision Changes

Modified Note 1 in Table 3: Number of wait states according to

10-May-2011 4

07-Jun-2013 5

CPU clock (HCLK) frequency and Note 1 in Table 3: Number of wait states according to CPU clock (HCLK) frequency.

Updated Section 2.4.1: Relation between CPU clock frequency

and Flash memory read time to add prefetch disabling when the

supply voltage is below 2.1 V.

Added note in Section : Standard programming Updated Section 2.5.2: Program/erase parallelism. Added Ta ble 5: Flash interrupt requests. Updated Section 2.6.3: Read protection (RDP). Updated Section 2.6.4: Write protections. Modified BOR_LEV bits definition in Section 2.8.6: Flash option

control register (FLASH_OPTCR).

Document converted to new template and disclaimer updated.

28/29 DocID15687 Rev 5

Please Read Carefully:

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DocID15687 Rev 5 29/29

STMicroelectronics STM32F207, STM32F40, STM32F215, STM32F217, STM32F41 Programming Manual

Specifications and Main Features

Frequently Asked Questions

User Manual

1 Glossary

2 Flash memory interface

2.1 Introduction

2.2 Main features

Figure 1. Flash memory interface connection inside system architecture

2.3 Flash memory

Table 2. Flash module organization

2.4 Read interface

2.4.1 Relation between CPU clock frequency and Flash memory read time

Table 3. Number of wait states according to CPU clock (HCLK) frequency

2.4.2 Adaptive real-time memory accelerator (ART Accelerator™)

Figure 2. Sequential 32-bit instruction execution

2.5 Erase and program operations

2.5.1 Unlocking the Flash control register

2.5.2 Program/erase parallelism

Ta bl e 4. Progra m/e ras e parallelism

2.5.3 Erase

2.5.4 Programming

2.5.5 Interrupts

Table 5. Flash interrupt requests

2.6 Option bytes

2.6.1 Description of user option bytes

Table 6. Option byte organization

Table 7. Description of the option bytes

2.6.2 Programming user option bytes

2.6.3 Read protection (RDP)

Table 8. Access versus read protection level

Figure 3. RDP levels

2.6.4 Write protections

2.7 One-time programmable bytes

Table 9. OTP part organization

2.8 Flash interface registers

2.8.1 Flash access control register (FLASH_ACR)

2.8.2 Flash key register (FLASH_KEYR)

2.8.3 Flash option key register (FLASH_OPTKEYR)

2.8.4 Flash status register (FLASH_SR)

2.8.5 Flash control register (FLASH_CR)

2.8.6 Flash option control register (FLASH_OPTCR)

2.8.7 Flash interface register map

Table 10. Flash register map and reset values

3 Revision history