This datasheet provides characteristics and ordering information of the STM32F072x8/xB
microcontrollers.
This document should be read in conjunction with the STM32F0xxxx reference manual
(RM0091). The reference manual is available from the STMicroelectronics website
www.st.com.
For information on the Arm
Technical Reference Manual, available from the www.arm.com website.
®(a)
Cortex®-M0 core, please refer to the Arm® Cortex®-M0
a. Arm is a registered trademark of Arm Limited (or its subsidiaries) in the US and/or elsewhere.
DS9826 Rev 69/128
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DescriptionSTM32F072x8 STM32F072xB
2 Description
The STM32F072x8/xB microcontrollers incorporate the high-performance
Arm®Cortex®-M0 32-bit RISC core operating at up to 48 MHz frequency, high-speed
embedded memories (up to 128
extensive range of enhanced peripherals and I/Os. All devices offer standard
communication interfaces (two I
USB Full-speed device (crystal-less), one CAN, one 12-bit ADC, one 12-bit DAC with two
channels, seven 16-bit timers, one 32-bit timer and an advanced-control PWM timer.
The STM32F072x8/xB microcontrollers operate in the -40 to +85 °C and -40 to +105 °C
temperature ranges, from a 2.0 to 3.6 V power supply. A comprehensive set of
power-saving modes allows the design of low-power applications.
The STM32F072x8/xB microcontrollers include devices in seven different packages ranging
from 48 pins to 100 pins with a die form also available upon request. Depending on the
device chosen, different sets of peripherals are included.
These features make the STM32F072x8/xB microcontrollers suitable for a wide range of
applications such as application control and user interfaces, hand-held equipment, A/V
receivers and digital TV, PC peripherals, gaming and GPS platforms, industrial applications,
PLCs, inverters, printers, scanners, alarm systems, video intercoms and HVACs.
Kbytes of Flash memory and 16 Kbytes of SRAM), and an
2
Cs, two SPI/I2S, one HDMI CEC and four USARTs), one
10/128DS9826 Rev 6
STM32F072x8 STM32F072xBDescription
Table 2. STM32F072x8/xB family device features and peripheral counts
PeripheralSTM32F072CxSTM32F072RxSTM32F072Vx
Flash memory (Kbyte)641286412864128
SRAM (Kbyte)16
Timers
Advanced
control
General
purpose
Basic2 (16-bit)
2S](1)
SPI [I
2
C2
I
1 (16-bit)
5 (16-bit)
1 (32-bit)
2 [2]
Comm.
interfaces
USART4
CAN1
USB1
CEC1
12-bit ADC
(number of channels)
1
(10 ext. + 3 int.)
12-bit DAC
(number of channels)
Analog comparator2
GPIOs375187
Capacitive sensing
channels
171824
Max. CPU frequency48 MHz
Operating voltage2.0 to 3.6 V
Operating temperature
Packages
1. The SPI interface can be used either in SPI mode or in I2S audio mode.
Ambient operating temperature: -40°C to 85°C / -40°C to 105°C
Junction temperature: -40°C to 105°C / -40°C to 125°C
LQFP48
UFQFPN48
WLCSP49
LQFP64
UFBGA64
1
(16 ext. + 3 int.)
1
(2)
LQFP100
UFBGA100
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DescriptionSTM32F072x8 STM32F072xB
MSv31404V4
Power domain of analog blocks :
V
BAT
V
DDIO2
4 channels
3 compl. channels
BRK, ETR input as AF
@ V
DD
@ V
DDA
System and peripheral
clocks
PA[15:0]
PB[15:0]
PC[15:0]
PF[10:9], PF6
PF[3:0]
8 groups of
4 channels
SYNC
87 AF
MOSI/SD
MISO/MCK
SCK/CK
NSS/WS as AF
@ V
DDA
V
DDA
V
SSA
SWCLK
SWDIO
as AF
16x
AD input
OSC_IN
OSC_OUT
V
BAT
= 1.65 to 3.6 V
OSC32_IN
OSC32_OUT
3 TAMPER-RTC
(ALARM OUT)
@ V
BAT
SYNC
MOSI/SD
MISO/MCK
SCK/CK
NSS/WS as AF
HSI14
HSI
LSI
HSI48
PLLCLK
V
DD
IR_OUT as AF
1 channel
1 compl, BRK as AF
1 channel
1 compl, BRK as AF
1 channel as AF
4 ch., ETR as AF
4 ch., ETR as AF
GP DMA
7 channels
CORTEX-M0 CPU
f
MAX
= 48 MHz
Serial Wire
Debug
NVIC
Touch
Sensing
Controller
PAD
Analog
switches
EXT. IT WKUP
SPI1/I2S1
SPI2/I2S2
SYSCFG IF
DBGMCU
Window WDG
APB
AHB
CRC
RESET & CLOCK
CONTROL
Power
Controller
XTAL OSC
4-32 MHz
Ind. Window WDG
SRAM
16 KB
Temp.
sensor
IF
12-bit ADC
RTC
Backup
reg
RTC interface
CRS
RC 14 MHz
RC 8 MHz
RC 40 kHz
PLL
RC 48MHz
AHB decoder
XTAL32 kHz
SRAM
controller
Bus matrix
Flash
memory
interface
Flash GPL
up to 128 KB
32-bit
Obl
V
DD
2 channels
1 compl, BRK as AF
RX, TX,CTS, RTS,
CK as AF
RX, TX,CTS, RTS,
CK as AF
RX, TX,CTS, RTS,
CK as AF
RX, TX,CTS, RTS,
CK as AF
SCL, SDA
(20 mA FM+) as AF
SCL, SDA, SMBA
(20 mA FM+) as AF
CEC as AF
I2C1
I2C2
12-bit DAC
12-bit DAC
IF
DAC_OUT1
DAC_OUT2
@ V
DDA
TIMER 6
TIMER 7
GP comparator 1
GP comparator 2
INPUT +
INPUT -
OUTPUT
as AF
@ V
DDA
GPIO port F
GPIO port E
GPIO port D
GPIO port C
GPIO port B
GPIO port A
PD[15:0]
PE[15:0]
V
DDA
SUPPLY
SUPERVISION
POWER
@ V
DDA
@ V
DD
V
DD18
POR
Reset
Int
V
DD
= 2 to 3.6 V
V
SS
NRST
V
DDA
V
SSA
V
DDIO2
OKIN
V
DD
PVD
POR/PDR
VOLT.REG
3.3 V to 1.8 V
USART4
USART3
USART2
USART1
HDMI-CEC
TIMER 17
TIMER 16
TIMER 15
TIMER 14
TIMER 3
TIMER 2 32-bit
PWM TIMER 1
TX, RX as AF
D+, D-
@ V
DDIO2
BxCAN
USB
PHY
USB
SRAM 768B
SRAM 256B
Figure 1. Block diagram
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STM32F072x8 STM32F072xBFunctional overview
3 Functional overview
Figure 1 shows the general block diagram of the STM32F072x8/xB devices.
3.1 Arm®-Cortex®-M0 core
The Arm® Cortex®-M0 is a generation of Arm 32-bit RISC processors for embedded
systems. It has been developed to provide a low-cost platform that meets the needs of MCU
implementation, with a reduced pin count and low-power consumption, while delivering
outstanding computational performance and an advanced system response to interrupts.
The Arm® Cortex®-M0 processors feature exceptional code-efficiency, delivering the high
performance expected from an Arm core, with memory sizes usually associated with 8- and
16-bit devices.
The STM32F072x8/xB devices embed Arm core and are compatible with all Arm tools and
software.
3.2 Memories
The device has the following features:
•16 Kbytes of embedded SRAM accessed (read/write) at CPU clock speed with 0 wait
states and featuring embedded parity checking with exception generation for fail-critical
applications.
•The non-volatile memory is divided into two arrays:
–64 to 128 Kbytes of embedded Flash memory for programs and data
–Option bytes
The option bytes are used to write-protect the memory (with 4 KB granularity) and/or
readout-protect the whole memory with the following options:
–Level 0: no readout protection
–Level 1: memory readout protection, the Flash memory cannot be read from or
written to if either debug features are connected or boot in RAM is selected
–Level 2: chip readout protection, debug features (Arm
and boot in RAM selection disabled
3.3 Boot modes
At startup, the boot pin and boot selector option bit are used to select one of the three boot
options:
•boot from User Flash memory
•boot from System Memory
•boot from embedded SRAM
®
Cortex®-M0 serial wire)
The boot loader is located in System Memory. It is used to reprogram the Flash memoryby
using USART on pins PA14/PA15, or PA9/PA10 or I
DFU interface.
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C on pins PB6/PB7 or through the USB
27
Functional overviewSTM32F072x8 STM32F072xB
3.4 Cyclic redundancy check calculation unit (CRC)
The CRC (cyclic redundancy check) calculation unit is used to get a CRC code using a
configurable generator polynomial value and size.
Among other applications, CRC-based techniques are used to verify data transmission or
storage integrity. In the scope of the EN/IEC 60335-1 standard, they offer a means of
verifying the Flash memory integrity. The CRC calculation unit helps compute a signature of
the software during runtime, to be compared with a reference signature generated at linktime and stored at a given memory location.
3.5 Power management
3.5.1 Power supply schemes
•VDD = V
= 2.0 to 3.6 V: external power supply for I/Os (V
DDIO1
regulator. It is provided externally through VDD pins.
•V
= from VDD to 3.6 V: external analog power supply for ADC, DAC, Reset blocks,
DDA
RCs and PLL (minimum voltage to be applied to V
are used). It is provided externally through VDDA pin. The V
always greater or equal to the V
•V
= 1.65 to 3.6 V: external power supply for marked I/Os. V
DDIO2
externally through the VDDIO2 pin. The V
from V
V
DDIO2
(V
REFINT
DD
or V
, but it must not be provided without a valid supply on VDD. The
DDA
supply is monitored and compared with the internal reference voltage
). When the V
DDIO2
are disabled by hardware. The output of this comparator is connected to EXTI line 31
and it can be used to generate an interrupt. Refer to the pinout diagrams or tables for
concerned I/Os list.
•V
= 1.65 to 3.6 V: power supply for RTC, external clock 32 kHz oscillator and
BAT
backup registers (through power switch) when V
For more details on how to connect power pins, refer to Figure 13: Power supply scheme.
3.5.2 Power supply supervisors
The device has integrated power-on reset (POR) and power-down reset (PDR) circuits.
They are always active, and ensure proper operation above a threshold of 2 V. The device
remains in reset mode when the monitored supply voltage is below a specified threshold,
V
POR/PDR
•The POR monitors only the VDD supply voltage. During the startup phase it is required
•The PDR monitors both the V
The device features an embedded programmable voltage detector (PVD) that monitors the
V
DD
when V
, without the need for an external reset circuit.
that V
should arrive first and be greater than or equal to VDD.
DDA
supply supervisor can be disabled (by programming a dedicated Option bit) to reduce
the power consumption if the application design ensures that V
equal to V
DD
.
power supply and compares it to the V
drops below the V
DD
PVD
) and the internal
DDIO1
is 2.4 V when the ADC or DAC
DDA
voltage level and must be established first.
DD
voltage level is completely independent
DDIO2
voltage level must be
DDA
is provided
DDIO2
is below this threshold, all the I/Os supplied from this rail
is not present.
DD
and V
DD
threshold and/or when VDD is higher than the V
supply voltages, however the V
DDA
is higher than or
DDA
threshold. An interrupt can be generated
PVD
DDA
power
PVD
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STM32F072x8 STM32F072xBFunctional overview
threshold. The interrupt service routine can then generate a warning message and/or put
the MCU into a safe state. The PVD is enabled by software.
3.5.3 Voltage regulator
The regulator has two operating modes and it is always enabled after reset.
•Main (MR) is used in normal operating mode (Run).
•Low power (LPR) can be used in Stop mode where the power demand is reduced.
In Standby mode, it is put in power down mode. In this mode, the regulator output is in high
impedance and the kernel circuitry is powered down, inducing zero consumption (but the
contents of the registers and SRAM are lost).
3.5.4 Low-power modes
The STM32F072x8/xB microcontrollers support three low-power modes to achieve the best
compromise between low power consumption, short startup time and available wakeup
sources:
•Sleepmode
In Sleep mode, only the CPU is stopped. All peripherals continue to operate and can
wake up the CPU when an interrupt/event occurs.
•Stopmode
Stop mode achieves very low power consumption while retaining the content of SRAM
and registers. All clocks in the 1.8 V domain are stopped, the PLL, the HSI RC and the
HSE crystal oscillators are disabled. The voltage regulator can also be put either in
normal or in low power mode.
The device can be woken up from Stop mode by any of the EXTI lines. The EXTI line
source can be one of the 16 external lines, the PVD output, RTC, I2C1, USART1,
USART2, USB, COMPx, V
The CEC, USART1, USART2 and I2C1 peripherals can be configured to enable the
HSI RC oscillator so as to get clock for processing incoming data. If this is used when
the voltage regulator is put in low power mode, the regulator is first switched to normal
mode before the clock is provided to the given peripheral.
•Standbymode
The Standby mode is used to achieve the lowest power consumption. The internal
voltage regulator is switched off so that the entire 1.8 V domain is powered off. The
PLL, the HSI RC and the HSE crystal oscillators are also switched off. After entering
Standby mode, SRAM and register contents are lost except for registers in the RTC
domain and Standby circuitry.
The device exits Standby mode when an external reset (NRST pin), an IWDG reset, a
rising edge on the WKUP pins, or an RTC event occurs.
supply comparator or the CEC.
DDIO2
Note:The RTC, the IWDG, and the corresponding clock sources are not stopped by entering Stop
or Standby mode.
3.6 Clocks and startup
System clock selection is performed on startup, however the internal RC 8 MHz oscillator is
selected as default CPU clock on reset. An external 4-32 MHz clock can be selected, in
which case it is monitored for failure. If failure is detected, the system automatically switches
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Functional overviewSTM32F072x8 STM32F072xB
MSv31418V2
OSC_IN
OSC_OUT
OSC32_IN
OSC32_OUT
IWDG
PLLMUL
MCO
Main clock
output
PLLCLK
HSI
HSE
PLLCLK
ADC
asynchronous
clock input
LSE
LSI
HSI
HSE
RTC
PLLSRC
SW
MCO
RTCCLK
RTCSEL
SYSCLK
TIM1,2,3,6,7,
14,15,16,17
FLITFCLK
Flash memory
programming
interface
HSI14
HSI14
LSE
I2C1
USART1
LSE
HSI
SYSCLK
PCLK
SYSCLK
HSI
PCLK
I2S1/SPI1
I2S2/SPI2
CEC
APB
peripherals
LSI
LSE
PREDIV
HSI48
PLLNODIV
MCOPRE
TIM14
LSE
HSE
SYNC
CSS
Trim
Legend
white
clock tree control element
clock line
control line
back to the internal RC oscillator. A software interrupt is generated if enabled. Similarly, full
interrupt management of the PLL clock entry is available when necessary (for example on
failure of an indirectly used external crystal, resonator or oscillator).
Figure 2. Clock tree
16/128DS9826 Rev 6
Several prescalers allow the application to configure the frequency of the AHB and the APB
domains. The maximum frequency of the AHB and the APB domains is 48 MHz.
STM32F072x8 STM32F072xBFunctional overview
Additionally, also the internal RC 48 MHz oscillator can be selected for system clock or PLL
input source. This oscillator can be automatically fine-trimmed by the means of the CRS
peripheral using the external synchronization.
3.7 General-purpose inputs/outputs (GPIOs)
Each of the GPIO pins can be configured by software as output (push-pull or open-drain), as
input (with or without pull-up or pull-down) or as peripheral alternate function. Most of the
GPIO pins are shared with digital or analog alternate functions.
The I/O configuration can be locked if needed following a specific sequence in order to
avoid spurious writing to the I/Os registers.
3.8 Direct memory access controller (DMA)
The 7-channel general-purpose DMAs manage memory-to-memory, peripheral-to-memory
and memory-to-peripheral transfers.
The DMA supports circular buffer management, removing the need for user code
intervention when the controller reaches the end of the buffer.
Each channel is connected to dedicated hardware DMA requests, with support for software
trigger on each channel. Configuration is made by software and transfer sizes between
source and destination are independent.
DMA can be used with the main peripherals: SPIx, I2Sx, I2Cx, USARTx, all TIMx timers
(except TIM14), DAC and ADC.
3.9 Interrupts and events
3.9.1 Nested vectored interrupt controller (NVIC)
The STM32F0xx family embeds a nested vectored interrupt controller able to handle up to
32 maskable interrupt channels (not including the 16 interrupt lines of Cortex
priority levels.
•Interrupt entry vector table address passed directly to the core
•Closely coupled NVIC core interface
•Allows early processing of interrupts
•Processing of late arriving higher priority interrupts
•Support for tail-chaining
•Processor state automatically saved
•Interrupt entry restored on interrupt exit with no instruction overhead
This hardware block provides flexible interrupt management features with minimal interrupt
latency.
®
-M0) and 4
DS9826 Rev 617/128
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Functional overviewSTM32F072x8 STM32F072xB
3.9.2 Extended interrupt/event controller (EXTI)
The extended interrupt/event controller consists of 32 edge detector lines used to generate
interrupt/event requests and wake-up the system. Each line can be independently
configured to select the trigger event (rising edge, falling edge, both) and can be masked
independently. A pending register maintains the status of the interrupt requests. The EXTI
can detect an external line with a pulse width shorter than the internal clock period. Up to 87
GPIOs can be connected to the 16 external interrupt lines.
3.10 Analog-to-digital converter (ADC)
The 12-bit analog-to-digital converter has up to 16 external and 3 internal (temperature
sensor, voltage reference, VBAT voltage measurement) channels and performs conversions
in single-shot or scan modes. In scan mode, automatic conversion is performed on a
selected group of analog inputs.
The ADC can be served by the DMA controller.
An analog watchdog feature allows very precise monitoring of the converted voltage of one,
some or all selected channels. An interrupt is generated when the converted voltage is
outside the programmed thresholds.
3.10.1 Temperature sensor
The temperature sensor (TS) generates a voltage V
temperature.
The temperature sensor is internally connected to the ADC_IN16 input channel which is
used to convert the sensor output voltage into a digital value.
The sensor provides good linearity but it has to be calibrated to obtain good overall
accuracy of the temperature measurement. As the offset of the temperature sensor varies
from chip to chip due to process variation, the uncalibrated internal temperature sensor is
suitable for applications that detect temperature changes only.
To improve the accuracy of the temperature sensor measurement, each device is
individually factory-calibrated by ST. The temperature sensor factory calibration data are
stored by ST in the system memory area, accessible in read-only mode.
Calibration value nameDescriptionMemory address
TS_CAL1
TS_CAL2
Table 3. Temperature sensor calibration values
SENSE
TS ADC raw data acquired at a
temperature of 30 °C (± 5 °C),
V
= 3.3 V (± 10 mV)
DDA
TS ADC raw data acquired at a
temperature of 110 °C (± 5 °C),
V
= 3.3 V (± 10 mV)
DDA
that varies linearly with
0x1FFF F7B8 - 0x1FFF F7B9
0x1FFF F7C2 - 0x1FFF F7C3
3.10.2 Internal voltage reference (V
The internal voltage reference (V
ADC and comparators. V
18/128DS9826 Rev 6
REFINT
REFINT
) provides a stable (bandgap) voltage output for the
REFINT
is internally connected to the ADC_IN17 input channel. The
)
STM32F072x8 STM32F072xBFunctional overview
precise voltage of V
is individually measured for each part by ST during production
REFINT
test and stored in the system memory area. It is accessible in read-only mode.
3.10.3 V
Calibration value nameDescriptionMemory address
VREFINT_CAL
battery voltage monitoring
BAT
Table 4. Internal voltage reference calibration values
Raw data acquired at a
temperature of 30 °C (± 5 °C),
V
= 3.3 V (± 10 mV)
DDA
This embedded hardware feature allows the application to measure the V
using the internal ADC channel ADC_IN18. As the V
and thus outside the ADC input range, the V
pin is internally connected to a bridge
BAT
divider by 2. As a consequence, the converted digital value is half the V
3.11 Digital-to-analog converter (DAC)
The two 12-bit buffered DAC channels can be used to convert digital signals into analog
voltage signal outputs. The chosen design structure is composed of integrated resistor
strings and an amplifier in non-inverting configuration.
This digital Interface supports the following features:
•8-bit or 12-bit monotonic output
•Left or right data alignment in 12-bit mode
•Synchronized update capability
•Noise-wave generation
•Triangular-wave generation
•Dual DAC channel independent or simultaneous conversions
•DMA capability for each channel
•External triggers for conversion
0x1FFF F7BA - 0x1FFF F7BB
battery voltage
voltage may be higher than V
BAT
BAT
voltage.
BAT
DDA
,
Six DAC trigger inputs are used in the device. The DAC is triggered through the timer trigger
outputs and the DAC interface is generating its own DMA requests.
3.12 Comparators (COMP)
The device embeds two fast rail-to-rail low-power comparators with programmable
reference voltage (internal or external), hysteresis and speed (low speed for low power) and
with selectable output polarity.
The reference voltage can be one of the following:
•External I/O
•DAC output pins
•Internal reference voltage or submultiple (1/4, 1/2, 3/4).Refer to Table 28: Embedded
internal reference voltage for the value and precision of the internal reference voltage.
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Functional overviewSTM32F072x8 STM32F072xB
Both comparators can wake up from STOP mode, generate interrupts and breaks for the
timers and can be also combined into a window comparator.
3.13 Touch sensing controller (TSC)
The STM32F072x8/xB devices provide a simple solution for adding capacitive sensing
functionality to any application. These devices offer up to 24 capacitive sensing channels
distributed over 8 analog I/O groups.
Capacitive sensing technology is able to detect the presence of a finger near a sensor which
is protected from direct touch by a dielectric (glass, plastic...). The capacitive variation
introduced by the finger (or any conductive object) is measured using a proven
implementation based on a surface charge transfer acquisition principle. It consists in
charging the sensor capacitance and then transferring a part of the accumulated charges
into a sampling capacitor until the voltage across this capacitor has reached a specific
threshold. To limit the CPU bandwidth usage, this acquisition is directly managed by the
hardware touch sensing controller and only requires few external components to operate.
For operation, one capacitive sensing GPIO in each group is connected to an external
capacitor and cannot be used as effective touch sensing channel.
The touch sensing controller is fully supported by the STMTouch touch sensing firmware
library, which is free to use and allows touch sensing functionality to be implemented reliably
in the end application.
Table 5. Capacitive sensing GPIOs available on STM32F072x8/xB devices
Group
1
2
3
4
Capacitive sensing
signal name
TSC_G1_IO1PA0
TSC_G1_IO2PA1TSC_G5_IO2PB4
TSC_G1_IO3PA2TSC_G5_IO3PB6
TSC_G1_IO4PA3TSC_G5_IO4PB7
TSC_G2_IO1PA4
TSC_G2_IO2PA5TSC_G6_IO2PB12
TSC_G2_IO3PA6TSC_G6_IO3PB13
TSC_G2_IO4PA7TSC_G6_IO4PB14
TSC_G3_IO1PC5
TSC_G3_IO2PB0TSC_G7_IO2PE3
TSC_G3_IO3PB1TSC_G7_IO3PE4
TSC_G3_IO4PB2TSC_G7_IO4PE5
TSC_G4_IO1PA9
TSC_G4_IO2PA10TSC_G8_IO2PD13
TSC_G4_IO3PA11TSC_G8_IO3PD14
TSC_G4_IO4PA12TSC_G8_IO4PD15
Pin
name
Group
5
6
7
8
Capacitive sensing
signal name
TSC_G5_IO1PB3
TSC_G6_IO1PB11
TSC_G7_IO1PE2
TSC_G8_IO1PD12
Pin
name
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STM32F072x8 STM32F072xBFunctional overview
Table 6. Number of capacitive sensing channels available
on STM32F072x8/xB devices
Analog I/O group
STM32F072VxSTM32F072RxSTM32F072Cx
G1333
G2333
G3332
G4333
G5333
G6333
G7300
G8300
Number of capacitive
sensing channels
3.14 Timers and watchdogs
The STM32F072x8/xB devices include up to six general-purpose timers, two basic timers
and an advanced control timer.
Number of capacitive sensing channels
241817
Timer
type
Advanced
control
General
purpose
Basic
Tab le 7 compares the features of the different timers.
Timer
Counter
resolution
TIM116-bit
TIM2 32-bit
TIM316-bit
TIM1416-bitUp
TIM1516-bitUp
TIM16
TIM17
TIM6
TIM7
16-bitUp
16-bitUp
Table 7. Timer feature comparison
Counter
type
Up, down,
up/down
Up, down,
up/down
Up, down,
up/down
Prescaler
factor
integer from
1 to 65536
integer from
1 to 65536
integer from
1 to 65536
integer from
1 to 65536
integer from
1 to 65536
integer from
1 to 65536
integer from
1 to 65536
DMA
request
generation
Yes43
Yes4-
Yes4-
No1-
Yes21
Yes11
Yes--
Capture/compare
channels
Complementary
outputs
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Functional overviewSTM32F072x8 STM32F072xB
3.14.1 Advanced-control timer (TIM1)
The advanced-control timer (TIM1) can be seen as a three-phase PWM multiplexed on six
channels. It has complementary PWM outputs with programmable inserted dead times. It
can also be seen as a complete general-purpose timer. The four independent channels can
be used for:
•input capture
•output compare
•PWM generation (edge or center-aligned modes)
•one-pulse mode output
If configured as a standard 16-bit timer, it has the same features as the TIMx timer. If
configured as the 16-bit PWM generator, it has full modulation capability (0-100%).
The counter can be frozen in debug mode.
Many features are shared with those of the standard timers which have the same
architecture. The advanced control timer can therefore work together with the other timers
via the Timer Link feature for synchronization or event chaining.
There are six synchronizable general-purpose timers embedded in the STM32F072x8/xB
devices (see
PWM outputs, or as simple time base.
Tabl e 7 for differences). Each general-purpose timer can be used to generate
TIM2, TIM3
STM32F072x8/xB devices feature two synchronizable 4-channel general-purpose timers.
TIM2 is based on a 32-bit auto-reload up/downcounter and a 16-bit prescaler. TIM3 is based
on a 16-bit auto-reload up/downcounter and a 16-bit prescaler. They feature 4 independent
channels each for input capture/output compare, PWM or one-pulse mode output. This
gives up to 12 input captures/output compares/PWMs on the largest packages.
The TIM2 and TIM3 general-purpose timers can work together or with the TIM1 advancedcontrol timer via the Timer Link feature for synchronization or event chaining.
TIM2 and TIM3 both have independent DMA request generation.
These timers are capable of handling quadrature (incremental) encoder signals and the
digital outputs from 1 to 3 hall-effect sensors.
Their counters can be frozen in debug mode.
TIM14
This timer is based on a 16-bit auto-reload upcounter and a 16-bit prescaler.
TIM14 features one single channel for input capture/output compare, PWM or one-pulse
mode output.
Its counter can be frozen in debug mode.
TIM15, TIM16 and TIM17
These timers are based on a 16-bit auto-reload upcounter and a 16-bit prescaler.
22/128DS9826 Rev 6
STM32F072x8 STM32F072xBFunctional overview
TIM15 has two independent channels, whereas TIM16 and TIM17 feature one single
channel for input capture/output compare, PWM or one-pulse mode output.
The TIM15, TIM16 and TIM17 timers can work together, and TIM15 can also operate
withTIM1 via the Timer Link feature for synchronization or event chaining.
TIM15 can be synchronized with TIM16 and TIM17.
TIM15, TIM16 and TIM17 have a complementary output with dead-time generation and
independent DMA request generation.
Their counters can be frozen in debug mode.
3.14.3 Basic timers TIM6 and TIM7
These timers are mainly used for DAC trigger generation. They can also be used as generic
16-bit time bases.
3.14.4 Independent watchdog (IWDG)
The independent watchdog is based on an 8-bit prescaler and 12-bit downcounter with
user-defined refresh window. It is clocked from an independent 40 kHz internal RC and as it
operates independently from the main clock, it can operate in Stop and Standby modes. It
can be used either as a watchdog to reset the device when a problem occurs, or as a free
running timer for application timeout management. It is hardware or software configurable
through the option bytes. The counter can be frozen in debug mode.
3.14.5 System window watchdog (WWDG)
The system window watchdog is based on a 7-bit downcounter that can be set as free
running. It can be used as a watchdog to reset the device when a problem occurs. It is
clocked from the APB clock (PCLK). It has an early warning interrupt capability and the
counter can be frozen in debug mode.
3.14.6 SysTick timer
This timer is dedicated to real-time operating systems, but could also be used as a standard
down counter. It features:
•a 24-bit down counter
•autoreload capability
•maskable system interrupt generation when the counter reaches 0
•programmable clock source (HCLK or HCLK/8)
3.15 Real-time clock (RTC) and backup registers
The RTC and the five backup registers are supplied through a switch that takes power either
on V
registers used to store 20 bytes of user application data when V
They are not reset by a system or power reset, or at wake up from Standby mode.
supply when present or through the V
DD
pin. The backup registers are five 32-bit
BAT
power is not present.
DD
DS9826 Rev 623/128
27
Functional overviewSTM32F072x8 STM32F072xB
The RTC is an independent BCD timer/counter. Its main features are the following:
•calendar with subseconds, seconds, minutes, hours (12 or 24 format), week day, date,
month, year, in BCD (binary-coded decimal) format
•automatic correction for 28, 29 (leap year), 30, and 31 day of the month
•programmable alarm with wake up from Stop and Standby mode capability
•Periodic wakeup unit with programmable resolution and period.
•on-the-fly correction from 1 to 32767 RTC clock pulses. This can be used to
synchronize the RTC with a master clock
•digital calibration circuit with 1 ppm resolution, to compensate for quartz crystal
inaccuracy
•Three anti-tamper detection pins with programmable filter. The MCU can be woken up
from Stop and Standby modes on tamper event detection
•timestamp feature which can be used to save the calendar content. This function can
be triggered by an event on the timestamp pin, or by a tamper event. The MCU can be
woken up from Stop and Standby modes on timestamp event detection
•reference clock detection: a more precise second source clock (50 or 60 Hz) can be
used to enhance the calendar precision
The RTC clock sources can be:
•a 32.768 kHz external crystal
•a resonator or oscillator
•the internal low-power RC oscillator (typical frequency of 40 kHz)
•the high-speed external clock divided by 32
3.16 Inter-integrated circuit interface (I2C)
Up to two I2C interfaces (I2C1 and I2C2) can operate in multimaster or slave modes. Both
can support Standard mode (up to 100 kbit/s), Fast mode (up to 400 kbit/s) and Fast Mode
Plus (up to 1 Mbit/s) with 20
Both support 7-bit and 10-bit addressing modes, multiple 7-bit slave addresses (two
addresses, one with configurable mask). They also include programmable analog and
digital noise filters.
AspectAnalog filterDigital filter
Pulse width of
suppressed spikes
BenefitsAvailable in Stop mode
Drawbacks
Table 8. Comparison of I2C analog and digital filters
In addition, I2C1 provides hardware support for SMBUS 2.0 and PMBUS 1.1: ARP
capability, Host notify protocol, hardware CRC (PEC) generation/verification, timeouts
mA output driveon most of the associated I/Os.
50 ns
Variations depending on
temperature, voltage, process
Programmable length from 1 to 15
I2Cx peripheral clocks
–Extra filtering capability vs.
standard requirements
–Stable length
Wakeup from Stop on address
match is not available when digital
filter is enabled.
24/128DS9826 Rev 6
STM32F072x8 STM32F072xBFunctional overview
verifications and ALERT protocol management. I2C1 also has a clock domain independent
from the CPU clock, allowing the I2C1 to wake up the MCU from Stop mode on address
match.
The I2C peripherals can be served by the DMA controller.
Refer to Tab le 9 for the differences between I2C1 and I2C2.
Table 9. STM32F072x8/xB I2C implementation
I2C features
7-bit addressing modeXX
10-bit addressing modeXX
Standard mode (up to 100 kbit/s)XX
Fast mode (up to 400 kbit/s)XX
Fast Mode Plus (up to 1 Mbit/s) with 20 mA output drive I/Os XX
The device embeds four universal synchronous/asynchronous receivers/transmitters
(USART1, USART2, USART3, USART4) which communicate at speeds of up to 6
They provide hardware management of the CTS, RTS and RS485 DE signals,
multiprocessor communication mode, master synchronous communication and single-wire
half-duplex communication mode. USART1 and USART2 support also SmartCard
communication (ISO 7816), IrDA SIR ENDEC, LIN Master/Slave capability and auto baud
rate feature, and have a clock domain independent of the CPU clock, allowing to wake up
the MCU from Stop mode.
The USART interfaces can be served by the DMA controller.
3.18 Serial peripheral interface (SPI) / Inter-integrated sound
interface (I
Two SPIs are able to communicate up to 18 Mbit/s in slave and master modes in full-duplex
and half-duplex communication modes. The 3-bit prescaler gives 8 master mode
frequencies and the frame size is configurable from 4 bits to 16 bits.
Two standard I2S interfaces (multiplexed with SPI1 and SPI2 respectively) supporting four
different audio standards can operate as master or slave at half-duplex communication
mode. They can be configured to transfer 16 and 24 or 32 bits with 16-bit or 32-bit data
resolution and synchronized by a specific signal. Audio sampling frequency from 8 kHz up to
192 kHz can be set by an 8-bit programmable linear prescaler. When operating in master
mode, they can output a clock for an external audio component at 256 times the sampling
frequency.
2
S)
Table 11. STM32F072x8/xB SPI/I2S implementation
SPI features
(1)
SPI1 and SPI2
Hardware CRC calculationX
Rx/Tx FIFOX
NSS pulse modeX
2
S mode X
I
TI modeX
1. X = supported.
3.19 High-definition multimedia interface (HDMI) - consumer
electronics control (CEC)
The device embeds a HDMI-CEC controller that provides hardware support for the
Consumer Electronics Control (CEC) protocol (Supplement 1 to the HDMI standard).
This protocol provides high-level control functions between all audiovisual products in an
environment. It is specified to operate at low speeds with minimum processing and memory
26/128DS9826 Rev 6
STM32F072x8 STM32F072xBFunctional overview
overhead. It has a clock domain independent from the CPU clock, allowing the HDMI_CEC
controller to wakeup the MCU from Stop mode on data reception.
3.20 Controller area network (CAN)
The CAN is compliant with specifications 2.0A and B (active) with a bit rate up to 1 Mbit/s. It
can receive and transmit standard frames with 11-bit identifiers as well as extended frames
with 29-bit identifiers. It has three transmit mailboxes, two receive FIFOs with 3 stages and
14 scalable filter banks.
3.21 Universal serial bus (USB)
The STM32F072x8/xB embeds a full-speed USB device peripheral compliant with the USB
specification version 2.0. The internal USB PHY supports USB FS signaling, embedded DP
pull-up and also battery charging detection according to Battery Charging Specification
Revision 1.2. The USB interface implements a full-speed (12 Mbit/s) function interface with
added support for USB 2.0 Link Power Management. It has software-configurable endpoint
setting with packet memory up-to 1 KB (the last 256 byte are used for CAN peripheral if
enabled) and suspend/resume support. It requires a precise 48 MHz clock which can be
generated from the internal main PLL (the clock source must use an HSE crystal oscillator)
or by the internal 48 MHz oscillator in automatic trimming mode. The synchronization for this
oscillator can be taken from the USB data stream itself (SOF signalization) which allows
crystal-less operation.
3.22 Clock recovery system (CRS)
The STM32F072x8/xB embeds a special block which allows automatic trimming of the
internal 48
operational range. This automatic trimming is based on the external synchronization signal,
which could be either derived from USB SOF signalization, from LSE oscillator, from an
external signal on CRS_SYNC pin or generated by user software. For faster lock-in during
startup it is also possible to combine automatic trimming with manual trimming action.
MHz oscillator to guarantee its optimal accuracy over the whole device
3.23 Serial wire debug port (SW-DP)
An Arm SW-DP interface is provided to allow a serial wire debugging tool to be connected to
the MCU.
DS9826 Rev 627/128
27
MS31409V2
AHB2
0
1
2
3
4
5
6
7
0xFFFF FFFF
Peripherals
SRAM
Flash memory
Reserved
System memory
Option Bytes
0xE010 0000
Flash, system
memory or SRAM,
depending on BOOT
configuration
0x0000 0000
0xE000 0000
0xC000 0000
0xA000 0000
0x8000 0000
0x6000 0000
0x4000 0000
0x2000 0000
0x0000 0000
0x0800 0000
0x0802 0000
0x1FFF C800
0x1FFF F800
0x1FFF FFFF
0x0002 0000
Reserved
CODE
APB
APB
Reserved
0x4000 0000
0x4000 8000
0x4001 0000
0x4001 8000
Reserved
0x4002 0000
AHB1
0x4800 0000
Reserved
0x4800 17FF
0x4002 43FF
Cortex-M0 internal
peripherals
Reserved
0x1FFF FC00
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
Memory mappingSTM32F072x8 STM32F072xB
4 Memory mapping
To the difference of STM32F072xB memory map in Figure 3, the two bottom code memory
spaces of STM32F072x8 end at 0x0000 FFFF and 0x0800 FFFF, respectively.
1. PC13, PC14 and PC15 are supplied through the power switch. Since the switch only sinks a limited amount of current
(3 mA), the use of GPIOs PC13 to PC15 in output mode is limited:
- The speed should not exceed 2 MHz with a maximum load of 30 pF.
- These GPIOs must not be used as current sources (e.g. to drive an LED).
2. After the first RTC domain power-up, PC13, PC14 and PC15 operate as GPIOs. Their function then depends on the
content of the RTC registers which are not reset by the system reset. For details on how to manage these GPIOs, refer to
the RTC domain and RTC register descriptions in the reference manual.
3. PC6, PC7, PC8, PC9, PA8, PA9, PA10, PA11, PA12, PA13, PF6, PA14, PA15, PC10, PC11, PC12, PD0, PD1 and PD2 I/Os
are supplied by VDDIO2.
4. After reset, these pins are configured as SWDIO and SWCLK alternate functions, and the internal pull-up on the SWDIO
pin and the internal pull-down on the SWCLK pin are activated.
DS9826 Rev 643/128
43
44/128DS9826 Rev 6
Table 15. Alternate functions selected through GPIOA_AFR registers for port A
Table 17. Alternate functions selected through GPIOC_AFR registers for port C
Pin nameAF0AF1
PC0EVENTOUT-
PC1EVENTOUT-
PC2EVENTOUTSPI2_MISO, I2S2_MCK
PC3EVENTOUTSPI2_MOSI, I2S2_SD
PC4EVENTOUTUSART3_TX
PC5TSC_G3_IO1USART3_RX
PC6TIM3_CH1-
PC7TIM3_CH2-
PC8TIM3_CH3-
PC9TIM3_CH4-
PC10USART4_TXUSART3_TX
PC11USART4_RXUSART3_RX
PC12USART4_CKUSART3_CK
PC13--
PC14--
PC15--
Table 18. Alternate functions selected through GPIOD_AFR registers for port D
Pin nameAF0AF1
PD0CAN_RXSPI2_NSS, I2S2_WS
PD1CAN_TXSPI2_SCK, I2S2_CK
PD2TIM3_ETRUSART3_RTS
PD3USART2_CTSSPI2_MISO, I2S2_MCK
PD4USART2_RTSSPI2_MOSI, I2S2_SD
PD5USART2_TX-
PD6USART2_RX-
PD7USART2_CK-
PD8USART3_TX-
PD9USART3_RX-
PD10USART3_CK-
PD11USART3_CTS-
PD12USART3_RTSTSC_G8_IO1
PD13-TSC_G8_IO2
PD14-TSC_G8_IO3
PD15CRS_SYNCTSC_G8_IO4
46/128DS9826 Rev 6
STM32F072x8 STM32F072xB
Table 19. Alternate functions selected through GPIOE_AFR registers for port E
Pin nameAF0AF1
PE0TIM16_CH1EVENTOUT
PE1TIM17_CH1EVENTOUT
PE2TIM3_ETRTSC_G7_IO1
PE3TIM3_CH1TSC_G7_IO2
PE4TIM3_CH2TSC_G7_IO3
PE5TIM3_CH3TSC_G7_IO4
PE6TIM3_CH4-
PE7TIM1_ETR-
PE8TIM1_CH1N-
PE9TIM1_CH1-
PE10TIM1_CH2N-
PE11TIM1_CH2-
PE12TIM1_CH3NSPI1_NSS, I2S1_WS
PE13TIM1_CH3SPI1_SCK, I2S1_CK
PE14TIM1_CH4SPI1_MISO, I2S1_MCK
PE15TIM1_BKINSPI1_MOSI, I2S1_SD
Table 20. Alternate functions available on port F
Pin nameAF
PF0CRS_SYNC
PF1-
PF2EVENTOUT
PF3EVENTOUT
PF6-
PF9TIM15_CH1
PF10TIM15_CH2
DS9826 Rev 647/128
47
Electrical characteristicsSTM32F072x8 STM32F072xB
MS19210V1
MCU pin
C = 50 pF
MS19211V1
MCU pin
V
IN
6 Electrical characteristics
6.1 Parameter conditions
Unless otherwise specified, all voltages are referenced to VSS.
6.1.1 Minimum and maximum values
Unless otherwise specified, the minimum and maximum values are guaranteed in the worst
conditions of ambient temperature, supply voltage and frequencies by tests in production on
100% of the devices with an ambient temperature at T
the selected temperature range).
Data based on characterization results, design simulation and/or technology characteristics
are indicated in the table footnotes and are not tested in production. Based on
characterization, the minimum and maximum values refer to sample tests and represent the
mean value plus or minus three times the standard deviation (mean ±3
6.1.2 Typical values
= 25 °C and TA = TAmax (given by
A
).
Unless otherwise specified, typical data are based on TA = 25 °C, VDD = V
are given only as design guidelines and are not tested.
Typical ADC accuracy values are determined by characterization of a batch of samples from
a standard diffusion lot over the full temperature range, where 95% of the devices have an
error less than or equal to the value indicated (mean ±2).
6.1.3 Typical curves
Unless otherwise specified, all typical curves are given only as design guidelines and are
not tested.
6.1.4 Loading capacitor
The loading conditions used for pin parameter measurement are shown in Figure 11.
6.1.5 Pin input voltage
The input voltage measurement on a pin of the device is described in Figure 12.
Figure 11. Pin loading conditionsFigure 12. Pin input voltage
= 3.3 V. Th ey
DDA
48/128DS9826 Rev 6
STM32F072x8 STM32F072xBElectrical characteristics
V
DDIO2
V
DD
MSv32190V1
Level shifter
IO
logic
Kernel logic
(CPU, Digital
& Memories)
Backup circuitry
(LSE, RTC,
Backup registers)
IN
OUT
Regulator
GPIOs
1.65 – 3.6 V
IN
OUT
GPIOs
3 x 100 nF
+1 x 4.7 μF
100 nF
Level shifter
IO
logic
+4.7 μF
V
DDIO2
V
SS
3 x V
SS
3 x V
DD
V
BAT
V
CORE
Power switch
V
DDIO2
V
DDIO1
ADC/
DAC
Analog:
(RCs, PLL, …)
V
REF+
V
REF-
V
DDA
10 nF
+1 μF
V
DDA
V
SSA
6.1.6 Power supply scheme
Figure 13. Power supply scheme
Caution:Each power supply pair (V
capacitors as shown above. These capacitors must be placed as close as possible to, or
below, the appropriate pins on the underside of the PCB to ensure the good functionality of
the device.
DD/VSS
, V
DDA/VSSA
etc.) must be decoupled with filtering ceramic
DS9826 Rev 649/128
99
Electrical characteristicsSTM32F072x8 STM32F072xB
MS31999V2
V
BAT
V
DD
V
DDA
I
DD
I
DDA
I
DD_VBAT
V
DDIO2
6.1.7 Current consumption measurement
Figure 14. Current consumption measurement scheme
50/128DS9826 Rev 6
STM32F072x8 STM32F072xBElectrical characteristics
6.2 Absolute maximum ratings
Stresses above the absolute maximum ratings listed in Tab le 21: Voltage characteristics,
Tab le 22: Current characteristics and Table 23: Thermal characteristics may cause
permanent damage to the device. These are stress ratings only and functional operation of
the device at these conditions is not implied. Exposure to maximum rating conditions for
extended periods may affect device reliability.
Table 21. Voltage characteristics
SymbolRatingsMinMaxUnit
(1)
V
DD–VSS
V
DDIO2–VSS
V
DDA–VSS
V
DD–VDDA
V
BAT–VSS
(2)
V
IN
External main supply voltage- 0.34.0V
External I/O supply voltage- 0.34.0V
External analog supply voltage- 0.34.0V
Allowed voltage difference for VDD > V
-0.4V
DDA
External backup supply voltage- 0.34.0V
Input voltage on FT and FTf pinsV
Input voltage on TTa pinsV
- 0.3V
SS
- 0.34.0 V
SS
DDIOx
+ 4.0
(3)
BOOT009.0V
Input voltage on any other pinVSS - 0.34.0V
|Variations between different V
|V
DDx
|V
- VSS|
SSx
V
ESD(HBM)
1. All main power (VDD, V
supply, in the permitted range.
2. VIN maximum must always be respected. Refer to Table 22: Current characteristics for the maximum
allowed injected current values.
3. Valid only if the internal pull-up/pull-down resistors are disabled. If internal pull-up or pull-down resistor is
enabled, the maximum limit is 4 V.
Variations between all the different ground
pins
Electrostatic discharge voltage
(human body model)
) and ground (VSS, V
DDA
power pins-50mV
DD
-50mV
see Section 6.3.12: Electrical
sensitivity characteristics
) pins must always be connected to the external power
SSA
V
-
DS9826 Rev 651/128
99
Electrical characteristicsSTM32F072x8 STM32F072xB
Table 22. Current characteristics
SymbolRatings Max.Unit
(1)
(1)
(1)
(1)
120
-120
100
-100
I
VDD
I
VSS
I
VDD(PIN)
I
VSS(PIN)
Total current into sum of all VDD power lines (source)
Total current out of sum of all VSS ground lines (sink)
Maximum current into each VDD power pin (source)
Maximum current out of each VSS ground pin (sink)
Output current sunk by any I/O and control pin25
I
IO(PIN)
I
IO(PIN)
Output current source by any I/O and control pin-25
Total output current sunk by sum of all I/Os and control pins
Total output current sourced by sum of all I/Os and control pins
(2)
(2)
80
-80
mA
Total output current sourced by sum of all I/Os supplied by VDDIO2-40
Injected current on B, FT and FTf pins-5/+0
(3)
I
INJ(PIN)
I
INJ(PIN)
1. All main power (VDD, VDDA) and ground (VSS, VSSA) pins must always be connected to the external power supply, in the
permitted range.
2. This current consumption must be correctly distributed over all I/Os and control pins. The total output current must not be
sunk/sourced between two consecutive power supply pins referring to high pin count QFP packages.
3. A positive injection is induced by V
exceeded. Refer to Table 21: Voltage characteristics for the maximum allowed input voltage values.
4. Positive injection is not possible on these I/Os and does not occur for input voltages lower than the specified maximum
value.
5. On these I/Os, a positive injection is induced by V
device. See note
6. When several inputs are submitted to a current injection, the maximum
negative injected currents (instantaneous values).
Injected current on TC and RST pin± 5
Injected current on TTa pins
Total injected current (sum of all I/O and control pins)
> V
IN
DDIOx
(2)
below Table 59: ADC accuracy.
(5)
(6)
while a negative injection is induced by VIN < VSS. I
> V
IN
. Negative injection disturbs the analog performance of the
DDA
I
is the absolute sum of the positive and
INJ(PIN)
INJ(PIN)
(4)
± 5
± 25
must never be
Table 23. Thermal characteristics
SymbolRatings ValueUnit
T
STG
T
J
Storage temperature range–65 to +150°C
Maximum junction temperature150°C
52/128DS9826 Rev 6
STM32F072x8 STM32F072xBElectrical characteristics
6.3 Operating conditions
6.3.1 General operating conditions
Table 24. General operating conditions
SymbolParameter ConditionsMinMaxUnit
f
HCLK
f
PCLK
V
V
DDIO2
V
V
V
DD
DDA
BAT
IN
Internal AHB clock frequency-0 48
MHz
Internal APB clock frequency-0 48
Standard operating voltage-2.03.6V
I/O supply voltage
Analog operating voltage
(ADC and DAC not used)
Analog operating voltage
(ADC and DAC used)
Must not be supplied if V
is not present
Must have a potential equal
to or higher than V
DD
DD
1.653.6V
V
DD
3.6
2.43.6
Backup operating voltage-1.653.6V
TC and RST I/O–0.3V
TTa I/O–0.3V
I/O input voltage
FT and FTf I/O–0.35.5
DDIOx
DDA
+0.3
+0.3
(1)
(1)
V
V
BOOT005.5
UFBGA100-364
LQFP100-476
Power dissipation at T
P
D
for suffix 6 or T
(2)
suffix 7
A
= 85 °C
A
= 105 °C for
UFBGA64-308
LQFP64-455
LQFP48-370
mW
UFQFPN48-625
WLCSP49-408
Ambient temperature for the
suffix 6 version
A
T
Ambient temperature for the
suffix 7 version
Maximum power dissipation –40 85
Low power dissipation
Maximum power dissipation –40 105
Low power dissipation
Suffix 6 version–40 105
T
J Junction temperature range
Suffix 7 version–40 125
1. For operation with a voltage higher than V
is lower, higher PD values are allowed as long as TJ does not exceed T
2. If T
A
3. In low power dissipation state, T
Thermal characteristics).
can be extended to this range as long as TJ does not exceed T
A
+ 0.3 V, the internal pull-up resistor must be disabled.
DDIOx
DS9826 Rev 653/128
(3)
(3)
. See Section 7.8: Thermal characteristics.
Jmax
–40 105
–40 125
(see Section 7.8:
Jmax
°C
°C
°C
99
Electrical characteristicsSTM32F072x8 STM32F072xB
6.3.2 Operating conditions at power-up / power-down
The parameters given in Tab le 25 are derived from tests performed under the ambient
temperature condition summarized in Tab le 24.
SymbolParameterConditionsMinMaxUnit
Table 25. Operating conditions at power-up / power-down
t
VDD
t
VDDA
VDD rise time rate
-
V
fall time rate20
DD
V
rise time rate
DDA
V
fall time rate20
DDA
-
0
0
6.3.3 Embedded reset and power control block characteristics
The parameters given in Tab le 26 are derived from tests performed under the ambient
temperature and supply voltage conditions summarized in Table 24: General operating
conditions.
V
t
RSTTEMPO
1. The PDR detector monitors VDD and also V
monitors only VDD.
2. The product behavior is guaranteed by design down to the minimum V
3. Data based on characterization results, not tested in production.
4. Guaranteed by design, not tested in production.
Table 26. Embedded reset and power control block characteristics
SymbolParameterConditionsMinTypMaxUnit
POR/PDR
V
PDRhyst
Power on/power down
(1)
reset threshold
Falling edge
Rising edge1.84
(2)
PDR hysteresis--40-mV
(4)
Reset temporization-1.502.504.50ms
(if kept enabled in the option bytes). The POR detector
DDA
1.801.88
(3)
value.
POR/PDR
1.922.00V
1.96
(3)
µs/V
V
Table 27. Programmable voltage detector characteristics
SymbolParameterConditionsMinTypMaxUnit
V
V
V
V
PVD0
PVD1
PVD2
PVD3
PVD threshold 0
PVD threshold 1
PVD threshold 2
PVD threshold 3
54/128DS9826 Rev 6
Rising edge2.12.182.26V
Falling edge22.082.16V
Rising edge2.192.282.37V
Falling edge2.092.182.27V
Rising edge2.282.382.48V
Falling edge2.182.282.38V
Rising edge2.382.482.58V
Falling edge2.282.382.48V
STM32F072x8 STM32F072xBElectrical characteristics
Table 27. Programmable voltage detector characteristics (continued)
SymbolParameterConditionsMinTypMaxUnit
V
PVD4
V
PVD5
V
PVD6
V
PVD7
V
PVDhyst
I
DD(PVD)
1. Guaranteed by design, not tested in production.
PVD threshold 4
PVD threshold 5
PVD threshold 6
PVD threshold 7
(1)
PVD hysteresis--100-mV
PVD current consumption--0.150.26
6.3.4 Embedded reference voltage
The parameters given in Tab le 28 are derived from tests performed under the ambient
temperature and supply voltage conditions summarized in Table 24: General operating
conditions.
SymbolParameterConditionsMinTypMaxUnit
Table 28. Embedded internal reference voltage
Rising edge2.472.582.69V
Falling edge2.372.482.59V
Rising edge2.572.682.79V
Falling edge2.472.582.69V
Rising edge2.662.782.9V
Falling edge2.562.682.8V
Rising edge2.762.883V
Falling edge2.662.782.9V
(1)
µA
V
REFINT
t
START
Internal reference voltage –40 °C < TA < +105 °C1.21.231.25V
ADC_IN17 buffer startup
time
ADC sampling time when
t
S_vrefint
reading the internal
reference voltage
Internal reference voltage
V
REFINT
spread over the
temperature range
T
Coeff
1. Guaranteed by design, not tested in production.
Temperature coefficient-
6.3.5 Supply current characteristics
The current consumption is a function of several parameters and factors such as the
operating voltage, ambient temperature, I/O pin loading, device software configuration,
operating frequencies, I/O pin switching rate, program location in memory and executed
binary code.
The current consumption is measured as described in Figure 14: Current consumption
measurement scheme.
10
100
(1)
(1)
(1)
---10
-
V
= 3 V--
DDA
4
- 100
(1)
-- µs
(1)
-
µs
mV
ppm/°C
DS9826 Rev 655/128
99
Electrical characteristicsSTM32F072x8 STM32F072xB
All Run-mode current consumption measurements given in this section are performed with a
reduced code that gives a consumption equivalent to CoreMark code.
Typical and maximum current consumption
The MCU is placed under the following conditions:
•All I/O pins are in analog input mode
•All peripherals are disabled except when explicitly mentioned
•The Flash memory access time is adjusted to the f
–0 wait state and Prefetch OFF from 0 to 24 MHz
–1 wait state and Prefetch ON above 24 MHz
•When the peripherals are enabled f
PCLK
= f
HCLK
The parameters given in Tab le 29 to Ta bl e 31 are derived from tests performed under
ambient temperature and supply voltage conditions summarized in Tab le 24: General
operating conditions.
Table 29. Typical and maximum current consumption from VDD supply at VDD = 3.6 V
All peripherals enabledAll peripherals disabled
HCLK
frequency:
Symbol
I
DD
Conditionsf
Parameter
HSE bypass,
HSE bypass,
HSI clock,
Supply current in Run mode,
code executing from Flash memory
HSI clock,
HCLK
Typ
Max @ T
(1)
A
Max @ T
Typ
(1)
A
25 °C85 °C105 °C25 °C85 °C 105 °C
HSI4848 MHz24.326.927.227.913.114.814.915.5
48 MHz24.126.827.027.713.014.614.815.4
PLL on
32 MHz16.018.318.619.28.769.569.7310.6
24 MHz12.313.714.314.77.367.948.378.81
8 MHz4.525.255.285.612.893.173.263.34
PLL off
1 MHz1.251.391.581.870.931.061.151.34
48 MHz24.127.127.627.812.914.714.915.5
PLL on
32 MHz16.118.218.919.38.829.699.8310.7
24 MHz12.414.014.414.87.317.928.348.75
PLL off
8 MHz4.525.255.355.612.873.163.253.33
Unit
mA
56/128DS9826 Rev 6
STM32F072x8 STM32F072xBElectrical characteristics
Table 29. Typical and maximum current consumption from VDD supply at VDD = 3.6 V (continued)
All peripherals enabledAll peripherals disabled
Symbol
I
DD
Conditionsf
Parameter
HSE bypass,
HSE bypass,
HSI clock,
code executing from RAM
Supply current in Run mode,
HSI clock,
HSE bypass,
HSE bypass,
HCLK
Typ
Max @ T
(1)
A
Max @ T
Typ
(1)
A
25 °C85 °C105 °C25 °C85 °C 105 °C
HSI4848 MHz23.125.425.826.612.813.513.713.9
PLL on
(2)
48 MHz23.025.3
25.726.5
32 MHz15.417.317.818.37.968.929.179.73
(2)
12.6 13.3
(2)
13.513.8
24 MHz11.412.913.513.76.488.048.238.41
8 MHz4.214.64.895.252.072.32.352.94
PLL off
1 MHz0.780.90.921.150.360.480.590.82
48 MHz23.124.525.025.212.613.713.914.0
PLL on
32 MHz15.417.417.718.28.058.859.169.94
24 MHz11.513.013.613.96.498.068.218.47
PLL off
8 MHz4.344.755.035.412.112.362.382.98
HSI4848 MHz15.116.616.817.53.083.433.563.61
PLL on
(2)
48 MHz15.016.5
16.717.3
32 MHz9.911.411.611.92.02.242.322.49
(2)
2.93 3.28
(2)
3.413.46
24 MHz7.438.178.718.821.631.821.881.9
8 MHz2.833.093.263.660.760.880.910.93
PLL off
1 MHz0.420.540.550.670.280.390.410.43
Unit
(2)
mA
(2)
48 MHz15.017.217.317.93.043.373.413.46
HSI clock,
PLL on
Supply current in Sleep mode
HSI clock,
PLL off
1. Data based on characterization results, not tested in production unless otherwise specified.
2. Data based on characterization results and tested in production (using one common test limit for sum of I
32 MHz9.9311.311.611.72.112.352.442.65
24 MHz7.538.458.878.951.641.831.91.93
8 MHz2.953.243.413.80.80.920.940.97
DS9826 Rev 657/128
DD
and I
DDA
).
99
Electrical characteristicsSTM32F072x8 STM32F072xB
Symbol
I
DDA
Table 30. Typical and maximum current consumption from the V
V
= 2.4 V V
DDA
Para-
meter
Supply
current in
Run or
Sleep
mode,
code
executing
from
Flash
memory
or RAM
Conditions
(1)
f
HCLK
Max @ T
Typ
(2)
A
Typ
25 °C85 °C 105 °C25 °C 85 °C 105 °C
HSI4848 MHz311326334343322337345354
HSE
bypass,
PLL on
HSE
(3)
48 MHz152170
178182
32 MHz105121126128113129136138
24 MHz 81.995.999.510188.7102107108
8 MHz2.73.84.34.63.64.75.25.5
(3)
165184
bypass,
PLL off
1 MHz2.73.84.34.63.64.75.25.5
48 MHz223244255260245265279284
HSI clock,
PLL on
32 MHz176195203206193212221224
24 MHz154171178181168185192195
supply
DDA
DDA
Max @ T
(3)
= 3.6 V
A
196200
(2)
Unit
(3)
µA
HSI clock,
PLL off
1. Current consumption from the V
in Run or Sleep mode or executing from Flash memory or RAM. Furthermore, when the PLL is off, I
the frequency.
2. Data based on characterization results, not tested in production unless otherwise specified.
3. Data based on characterization results and tested in production (using one common test limit for sum of I
8 MHz74.283.486.487.383.492.595.396.6
supply is independent of whether the digital peripherals are enabled or disabled, being
DDA
is independent from
DDA
DD
and I
DDA
).
58/128DS9826 Rev 6
STM32F072x8 STM32F072xBElectrical characteristics
Table 31. Typical and maximum consumption in Stop and Standby modes
TA =
85 °C
(1)
TA =
105 °C
Unit
Sym-
bol
Para-
meter
Conditions
Typ @V
DD
(V
DD
= V
)Max
DDA
2.0 V 2.4 V 2.7 V 3.0 V 3.3 V 3.6 V
=
T
A
25 °C
I
DD
Supply
current in
Stop
mode
Supply
current in
Standby
mode
Regulator in run
mode, all
oscillators OFF
Regulator in lowpower mode, all
oscillators OFF
LSI ON and IWDG
ON
LSI OFF and IWDG
OFF
15.415.515.615.715.815.923
3.23.33.43.53.63.78
0.81.01.11.21.31.4---
0.60.70.90.91.01.12.1
(2)
(2)
(2)
2.63.1
Regulator in
Supply
run mode, all
oscillators
OFF
2.12.22.32.52.62.83.5
(2)
3.64.6
current in
Stop
mode
Regulator in
low-power
mode, all
2.12.22.32.52.62.83.5
(2)
3.64.6
oscillators
monitoring ON
OFF
DDA
LSI ON and
V
IWDG ON
LSI OFF and
IWDG OFF
Regulator in
run mode, all
oscillators
OFF
2.52.72.83.03.23.5---
(2)
1.92.12.22.32.52.63.5
3.64.6
1.31.31.41.41.51.5---
I
DDA
Supply
current in
Standby
mode
Supply
current in
Stop
mode
Regulator in
low-power
mode, all
1.31.31.41.41.51.5--oscillators
OFF
monitoring OFF
DDA
Supply
current in
Standby
mode
1. Data based on characterization results, not tested in production unless otherwise specified.
2. Data based on characterization results and tested in production (using one common test limit for sum of I
LSI ON and
V
IWDG ON
LSI OFF and
IWDG OFF
1.71.81.92.02.12.2---
1.21.21.21.31.31.4---
4968
3351
and I
DD
(2)
(2)
(2)
(2)
(2)
(2)
DDA
µA
).
DS9826 Rev 659/128
99
Electrical characteristicsSTM32F072x8 STM32F072xB
Table 32. Typical and maximum current consumption from the V
SymbolParameterConditions
1.8 V
1.65 V
LSE & RTC ON; “Xtal
mode”: lower driving
RTC
I
DD_VBAT
1. Data based on characterization results, not tested in production.
•AHB prescaler of 2, 4, 8 and 16 is used for the frequencies 4 MHz, 2 MHz, 1 MHz and
500 kHz respectively
DDA
= 3.3 V
Typ @ V
2.4 V
= f
PCLK
BAT
2.7 V
HCLK
HCLK
TA =
3.6 V
25 °C
3.3 V
frequency:
BAT
supply
(1)
Max
TA =
85 °C
TA =
105 °C
Unit
µA
60/128DS9826 Rev 6
STM32F072x8 STM32F072xBElectrical characteristics
Table 33. Typical current consumption, code executing from Flash memory,
running from HSE
8 MHz crystal
SymbolParameterf
48 MHz24.113.514.63.5
36 MHz18.310.511.12.9
32 MHz16.59.610.02.7
24 MHz12.97.67.82.2
Current
DD
consumption
from V
I
16 MHz8.95.35.51.7
DD
supply
500 kHz1.31.21.21.0
48 MHz163.3
36 MHz124.3
32 MHz111.9
24 MHz87.1
I
DDA
Current
consumption
from V
16 MHz62.5
DDA
supply
HCLK
Typical consumption in
Run mode
Peripherals
enabled
Peripherals
disabled
Typical consumption in
Sleep mode
Peripherals
enabled
Peripherals
disabled
8 MHz4.83.13.11.2
4 MHz3.12.12.21.1
2 MHz2.11.61.61.0
1 MHz1.61.31.41.0
8 MHz2.5
4 MHz2.5
2 MHz2.5
1 MHz2.5
Unit
mA
A
500 kHz2.5
I/O system current consumption
The current consumption of the I/O system has two components: static and dynamic.
I/O static current consumption
All the I/Os used as inputs with pull-up generate current consumption when the pin is
externally held low. The value of this current consumption can be simply computed by using
the pull-up/pull-down resistors values given in
For the output pins, any external pull-down or external load must also be considered to
estimate the current consumption.
Additional I/O current consumption is due to I/Os configured as inputs if an intermediate
voltage level is externally applied. This current consumption is caused by the input Schmitt
DS9826 Rev 661/128
Tab le 53: I/O static characteristics.
99
Electrical characteristicsSTM32F072x8 STM32F072xB
I
SW
V
DDIOxfSW
C××=
trigger circuits used to discriminate the input value. Unless this specific configuration is
required by the application, this supply current consumption can be avoided by configuring
these I/Os in analog mode. This is notably the case of ADC input pins which should be
configured as analog inputs.
Caution:Any floating input pin can also settle to an intermediate voltage level or switch inadvertently,
as a result of external electromagnetic noise. To avoid current consumption related to
floating pins, they must either be configured in analog mode, or forced internally to a definite
digital value. This can be done either by using pull-up/down resistors or by configuring the
pins in output mode.
I/O dynamic current consumption
In addition to the internal peripheral current consumption measured previously (see
Tab le 35: Peripheral current consumption), the I/Os used by an application also contribute
to the current consumption. When an I/O pin switches, it uses the current from the I/O
supply voltage to supply the I/O pin circuitry and to charge/discharge the capacitive load
(internal or external) connected to the pin:
where
ISW is the current sunk by a switching I/O to charge/discharge the capacitive load
V
f
C is the total capacitance seen by the I/O pin: C = C
is the I/O supply voltage
DDIOx
is the I/O switching frequency
SW
INT
+ C
EXT
+ C
S
CS is the PCB board capacitance including the pad pin.
The test pin is configured in push-pull output mode and is toggled by software at a fixed
frequency.
62/128DS9826 Rev 6
STM32F072x8 STM32F072xBElectrical characteristics
Table 34. Switching output I/O current consumption
SymbolParameterConditions
V
DDIOx
C =C
V
DDIOx
C
EXT
C = C
INT
V
DDIOx
C
EXT
C = C
INT
= 3.3 V
INT
= 3.3 V
= 0 pF
+ C
EXT
= 3.3 V
= 10 pF
+ C
EXT
(1)
+ C
+ C
frequency (fSW)
S
S
I/O toggling
4 MHz0.07
8 MHz0.15
16 MHz0.31
24 MHz0.53
48 MHz0.92
4 MHz0.18
8 MHz0.37
16 MHz0.76
24 MHz1.39
48 MHz2.188
4 MHz0.32
8 MHz0.64
16 MHz1.25
24 MHz2.23
TypU n it
I
SW
1. CS = 7 pF (estimated value).
I/O current
consumption
V
C
C = C
V
C
C = C
V
C
C = C
V
C
C = C
DDIOx
EXT
INT
DDIOx
EXT
INT
DDIOx
EXT
INT
C = C
DDIOx
EXT
INT
C = C
= 3.3 V
= 22 pF
+ C
EXT
= 3.3 V
= 33 pF
+ C
EXT
= 3.3 V
= 47 pF
+ C
EXT
int
= 2.4 V
= 47 pF
+ C
EXT
int
+ C
+ C
+ C
+ C
48 MHz4.442
mA
4 MHz0.49
8 MHz0.94
S
16 MHz2.38
24 MHz3.99
4 MHz0.64
8 MHz1.25
S
16 MHz3.24
24 MHz5.02
4 MHz0.81
8 MHz1.7
S
16 MHz3.67
4 MHz0.66
8 MHz1.43
S
16 MHz2.45
24 MHz4.97
DS9826 Rev 663/128
99
Electrical characteristicsSTM32F072x8 STM32F072xB
On-chip peripheral current consumption
The current consumption of the on-chip peripherals is given in Tabl e 35. The MCU is placed
under the following conditions:
•All I/O pins are in analog mode
•All peripherals are disabled unless otherwise mentioned
•The given value is calculated by measuring the current consumption
–with all peripherals clocked off
–with only one peripheral clocked on
•Ambient operating temperature and supply voltage conditions summarized in Table 21:
Voltage characteristics
•The power consumption of the digital part of the on-chip peripherals is given in
Table 35. The power consumption of the analog part of the peripherals (where
applicable) is indicated in each related section of the datasheet.
Table 35. Peripheral current consumption
PeripheralTypical consumption at 25 °CUnit
BusMatrix
CRC1.6
DMA5.7
(1)
2.2
AHB
Flash memory interface13.0
GPIOA8.2
GPIOB8.5
GPIOC2.3
GPIOD1.9
GPIOE2.2
GPIOF1.2
SRAM0.9
TSC5.0
All AHB peripherals52.6
µA/MHz
64/128DS9826 Rev 6
STM32F072x8 STM32F072xBElectrical characteristics
Table 35. Peripheral current consumption (continued)
PeripheralTypical consumption at 25 °CUnit
(3)
(3)
(2)
2.8
4.1
4.7
APB-Bridge
ADC
CAN12.4
CEC1.5
CRS0.8
DAC
DEBUG (MCU debug feature)0.1
I2C13.9
I2C24.0
PWR1.3
SPI18.7
SPI28.5
SYSCFG & COMP1.7
TIM114.9
TIM215.5
APB
TIM311.4
TIM62.5
TIM72.3
TIM145.3
TIM159.1
TIM166.6
TIM176.8
USART117.0
USART216.7
USART35.4
USART45.4
USB7.2
WWDG1.4
All APB peripherals182
1. The BusMatrix is automatically active when at least one master is ON (CPU, DMA).
2. The APB Bridge is automatically active when at least one peripheral is ON on the Bus.
3. The power consumption of the analog part (I
included. Refer to the tables of characteristics in the subsequent sections.
) of peripherals such as ADC, DAC, Comparators, is not
DDA
µA/MHz
DS9826 Rev 665/128
99
Electrical characteristicsSTM32F072x8 STM32F072xB
6.3.6 Wakeup time from low-power mode
The wakeup times given in Table 36 are the latency between the event and the execution of
the first user instruction. The device goes in low-power mode after the WFE (Wait For
Event) instruction, in the case of a WFI (Wait For Interruption) instruction, 16 CPU cycles
must be added to the following timings due to the interrupt latency in the Cortex M0
architecture.
The SYSCLK clock source setting is kept unchanged after wakeup from Sleep mode.
During wakeup from Stop or Standby mode, SYSCLK takes the default setting: HSI 8 MHz.
The wakeup source from Sleep and Stop mode is an EXTI line configured in event mode.
The wakeup source from Standby mode is the WKUP1 pin (PA0).
All timings are derived from tests performed under the ambient temperature and supply
voltage conditions summarized in
Table 36. Low-power mode wakeup timings
SymbolParameterConditions
Tab le 24: General operating conditions.
Typ @VDD = VDDA
Max Unit
= 2.0 V = 2.4 V = 2.7 V = 3 V = 3.3 V
t
WUSTOP
t
WUSTANDBY
t
WUSLEEP
Wakeup from Stop
mode
Wakeup from
Standby mode
Wakeup from Sleep
mode
Regulator in run
mode
Regulator in low
power mode
-60.455.653.55251-
-4 SYSCLK cycles-
3.23.12.92.92.85
7.05.85.24.94.69
6.3.7 External clock source characteristics
High-speed external user clock generated from an external source
In bypass mode the HSE oscillator is switched off and the input pin is a standard GPIO.
The external clock signal has to respect the I/O characteristics in Section 6.3.14. However,
the recommended clock input waveform is shown in Figure 15: High-speed external clock
source AC timing diagram.
SymbolParameter
f
HSE_ext
V
HSEH
V
HSEL
t
w(HSEH)
t
w(HSEL)
t
r(HSE)
t
f(HSE)
Table 37. High-speed external user clock characteristics
(1)
User external clock source frequency-832MHz
OSC_IN input pin high level voltage0.7 V
OSC_IN input pin low level voltageV
OSC_IN high or low time15--
OSC_IN rise or fall time--20
µs
MinTypMaxUnit
DDIOx
SS
-V
-0.3 V
DDIOx
DDIOx
V
ns
66/128DS9826 Rev 6
STM32F072x8 STM32F072xBElectrical characteristics
MS19215V2
V
LSEH
t
f(LSE)
90%
10%
T
LSE
t
t
r(LSE)
V
LSEL
t
w(LSEH)
t
w(LSEL)
1. Guaranteed by design, not tested in production.
Figure 15. High-speed external clock source AC timing diagram
t
w(HSEH)
V
HSEH
V
HSEL
90%
10%
t
r(HSE)
T
HSE
t
f(HSE)
t
w(HSEL)
t
MS19214V2
Low-speed external user clock generated from an external source
In bypass mode the LSE oscillator is switched off and the input pin is a standard GPIO.
The external clock signal has to respect the I/O characteristics in Section 6.3.14. However,
the recommended clock input waveform is shown in Figure 16.
SymbolParameter
f
LSE_ext
V
LSEH
V
LSEL
t
w(LSEH)
t
w(LSEL)
t
r(LSE)
t
f(LSE)
1. Guaranteed by design, not tested in production.
Table 38. Low-speed external user clock characteristics
(1)
User external clock source frequency-32.7681000kHz
OSC32_IN input pin high level voltage0.7 V
OSC32_IN input pin low level voltageV
OSC32_IN high or low time450--
OSC32_IN rise or fall time--50
MinTypMaxUnit
DDIOx
SS
-V
-0.3 V
DDIOx
DDIOx
V
ns
Figure 16. Low-speed external clock source AC timing diagram
DS9826 Rev 667/128
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Electrical characteristicsSTM32F072x8 STM32F072xB
High-speed external clock generated from a crystal/ceramic resonator
The high-speed external (HSE) clock can be supplied with a 4 to 32 MHz crystal/ceramic
resonator oscillator. All the information given in this paragraph are based on design
simulation results obtained with typical external components specified in
application, the resonator and the load capacitors have to be placed as close as possible to
the oscillator pins in order to minimize output distortion and startup stabilization time. Refer
to the crystal resonator manufacturer for more details on the resonator characteristics
(frequency, package, accuracy).
SymbolParameterConditions
Table 39. HSE oscillator characteristics
(1)
Min
Table 39. In the
(2)
TypM a x
(2)
Unit
f
OSC_IN
R
Oscillator frequency-4832MHz
Feedback resistor--200-k
F
During startup
V
= 3.3 V,
DD
Rm = 30 ,
(3)
--8.5
-0.4-
CL = 10 pF@8 MHz
V
= 3.3 V,
DD
Rm = 45 ,
-0.5-
CL = 10 pF@8 MHz
V
= 3.3 V,
I
DD
HSE current consumption
DD
Rm = 30 ,
-0.8-
CL = 5 pF@32 MHz
V
= 3.3 V,
DD
Rm = 30 ,
-1-
CL = 10 pF@32 MHz
V
= 3.3 V,
DD
Rm = 30 ,
-1.5-
CL = 20 pF@32 MHz
g
t
SU(HSE)
1. Resonator characteristics given by the crystal/ceramic resonator manufacturer.
2. Guaranteed by design, not tested in production.
3. This consumption level occurs during the first 2/3 of the t
4. t
SU(HSE)
oscillation is reached. This value is measured for a standard crystal resonator and it can vary significantly
with the crystal manufacturer
Oscillator transconductanceStartup10--mA/V
m
(4)
Startup time VDD is stabilized-2-ms
startup time
SU(HSE)
is the startup time measured from the moment it is enabled (by software) to a stabilized 8 MHz
mA
For CL1 and CL2, it is recommended to use high-quality external ceramic capacitors in the
5
pF to 20 pF range (Typ.), designed for high-frequency applications, and selected to match
the requirements of the crystal or resonator (see
Figure 17). CL1 and C
are usually the
L2
same size. The crystal manufacturer typically specifies a load capacitance which is the
series combination of C
and CL2. PCB and MCU pin capacitance must be included (10 pF
L1
can be used as a rough estimate of the combined pin and board capacitance) when sizing
C
and CL2.
L1
Note:For information on selecting the crystal, refer to the application note AN2867 “Oscillator
design guide for ST microcontrollers” available from the ST website www.st.com.
68/128DS9826 Rev 6
STM32F072x8 STM32F072xBElectrical characteristics
MS19876V1
(1)
OSC_IN
OSC_OUT
R
F
Bias
controlled
gain
f
HSE
R
EXT
8 MHz
resonator
Resonator with integrated
capacitors
C
L1
C
L2
Figure 17. Typical application with an 8 MHz crystal
1. R
value depends on the crystal characteristics.
EXT
Low-speed external clock generated from a crystal resonator
The low-speed external (LSE) clock can be supplied with a 32.768 kHz crystal resonator
oscillator. All the information given in this paragraph are based on design simulation results
obtained with typical external components specified in
resonator and the load capacitors have to be placed as close as possible to the oscillator
pins in order to minimize output distortion and startup stabilization time. Refer to the crystal
resonator manufacturer for more details on the resonator characteristics (frequency,
package, accuracy).
Table 40. LSE oscillator characteristics (f
SymbolParameterConditions
low drive capability-0.50.9
I
DD
g
LSE current consumption
m
Oscillator
transconductance
medium-low drive capability--1
medium-high drive capability--1.3
high drive capability--1.6
low drive capability5--
medium-low drive capability8--
medium-high drive capability15--
(1)
Tabl e 40. In the application, the
= 32.768 kHz)
LSE
(2)
Min
TypMa x
(2)
Unit
µA
µA/V
t
SU(LSE)
1. Refer to the note and caution paragraphs below the table, and to the application note AN2867 “Oscillator design guide for
ST microcontrollers”.
2. Guaranteed by design, not tested in production.
3. t
SU(LSE)
reached. This value is measured for a standard crystal and it can vary significantly with the crystal manufacturer
high drive capability25--
(3)
is the startup time measured from the moment it is enabled (by software) to a stabilized 32.768 kHz oscillation is
Startup time V
is stabilized-2-s
DDIOx
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MS30253V2
OSC32_IN
OSC32_OUT
Drive
programmable
amplifier
f
LSE
32.768 kHz
resonator
Resonator with integrated
capacitors
C
L1
C
L2
Note:For information on selecting the crystal, refer to the application note AN2867 “Oscillator
design guide for ST microcontrollers” available from the ST website www.st.com.
Figure 18. Typical application with a 32.768 kHz crystal
Note:An external resistor is not required between OSC32_IN and OSC32_OUT and it is forbidden
to add one.
6.3.8 Internal clock source characteristics
The parameters given in Tab le 41 are derived from tests performed under ambient
temperature and supply voltage conditions summarized in Table 24: General operating
conditions. The provided curves are characterization results, not tested in production.
70/128DS9826 Rev 6
STM32F072x8 STM32F072xBElectrical characteristics
MS30985V4
T [ºC]
A
MAX
MIN
-40-20020406080100120
4%
3%
2%
1%
0%
-1%
-2%
-3%
-4%
High-speed internal (HSI) RC oscillator
Table 41. HSI oscillator characteristics
SymbolParameterConditionsMinTypMaxUnit
(1)
f
HSI
Frequency--8-MHz
TRIMHSI user trimming step---1
DuCy
ACC
(HSI)
HSI
Duty cycle-45
= -40 to 105°C-2.8
T
A
= -10 to 85°C-1.9
T
A
Accuracy of the HSI
oscillator
TA = 0 to 85°C-1.9
TA = 0 to 70°C-1.3
TA = 0 to 55°C-1
TA = 25°C
t
su(HSI)
I
DDA(HSI)
1. V
2. Guaranteed by design, not tested in production.
3. Data based on characterization results, not tested in production.
4. Factory calibrated, parts not soldered.
= 3.3 V, TA = -40 to 105°C unless otherwise specified.
DDA
HSI oscillator startup time-1
HSI oscillator power
consumption
(4)
--80100
(2)
(3)
(3)
(3)
(3)
(3)
-55
-3.8
-2.3
-2
-2
-2
-1-1
(2)
-2
Figure 19. HSI oscillator accuracy characterization results for soldered parts
(2)
(3)
(3)
(3)
(2)
(2)
(3)
(3)
(2)
%
%
%
µs
µA
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MS30986V2
-5%
-4%
-
3%
-
2%
-
1%
0%
1%
2%
3%
4%
5%
-40-20020406080100120
MAX
MIN
T [°C]
A
High-speed internal 14 MHz (HSI14) RC oscillator (dedicated to ADC)
Table 42. HSI14 oscillator characteristics
SymbolParameterConditionsMinTypMaxUnit
(1)
f
HSI14
Frequency--14-MHz
TRIMHSI14 user-trimming step---1
DuCy
(HSI14)
Duty cycle-45
TA = –40 to 105 °C –4.2
= –10 to 85 °C–3.2
T
ACC
t
su(HSI14)
I
DDA(HSI14)
1. V
DDA
HSI14
Accuracy of the HSI14
oscillator (factory calibrated)
HSI14 oscillator startup time-1
HSI14 oscillator power
consumption
= 3.3 V, TA = –40 to 105 °C unless otherwise specified.
2. Guaranteed by design, not tested in production.
3. Data based on characterization results, not tested in production.
2. Guaranteed by design, not tested in production.
Frequency 304050kHz
(2)
LSI oscillator startup time--85µs
(2)
LSI oscillator power consumption-0.751.2µA
= 3.3 V, TA = –40 to 105 °C unless otherwise specified.
6.3.9 PLL characteristics
The parameters given in Tab le 45 are derived from tests performed under ambient
temperature and supply voltage conditions summarized in Table 24: General operating
conditions.
SymbolParameter
f
PLL_IN
f
PLL_OUT
t
LOCK
Jitter
PLL
1. Take care to use the appropriate multiplier factors to obtain PLL input clock values compatible with the
range defined by f
2. Guaranteed by design, not tested in production.
PLL input clock
PLL input clock duty cycle40
PLL multiplier output clock16
PLL lock time--200
Cycle-to-cycle jitter--300
PLL_OUT
Table 45. PLL characteristics
(1)
.
Value
MinTypMax
(2)
1
(2)
(2)
8.024
-60
-48MHz
(2)
(2)
(2)
(2)
Unit
MHz
%
µs
ps
6.3.10 Memory characteristics
Flash memory
The characteristics are given at TA = –40 to 105 °C unless otherwise specified.
SymbolParameter ConditionsMinTypMax
t
t
ERASE
1. Guaranteed by design, not tested in production.
16-bit programming time TA = - 40 to +105 °C4053.560µs
prog
Page (2 KB) erase timeTA = - 40 to +105 °C20-40ms
Mass erase timeTA = - 40 to +105 °C20-40ms
t
ME
I
Supply current
DD
74/128DS9826 Rev 6
Table 46. Flash memory characteristics
Write mode --10mA
Erase mode --12mA
(1)
Unit
STM32F072x8 STM32F072xBElectrical characteristics
Table 47. Flash memory endurance and data retention
SymbolParameter ConditionsMin
N
END
t
RET
1. Data based on characterization results, not tested in production.
2. Cycling performed over the whole temperature range.
EnduranceTA = –40 to +105 °C
Data retention
6.3.11 EMC characteristics
Susceptibility tests are performed on a sample basis during device characterization.
Functional EMS (electromagnetic susceptibility)
While a simple application is executed on the device (toggling 2 LEDs through I/O ports).
the device is stressed by two electromagnetic events until a failure occurs. The failure is
indicated by the LEDs:
•Electrostatic discharge (ESD) (positive and negative) is applied to all device pins until
a functional disturbance occurs. This test is compliant with the IEC 61000-4-2 standard.
•FTB: A Burst of Fast Transient voltage (positive and negative) is applied to V
V
through a 100 pF capacitor, until a functional disturbance occurs. This test is
SS
compliant with the IEC 61000-4-4 standard.
1 kcycle
10 kcycle
(2)
at TA = 85 °C
(2)
at TA = 105 °C10
(2)
at TA = 55 °C20
10
30
(1)
kcycle
DD
Unit
Yea r1 kcycle
and
A device reset allows normal operations to be resumed.
The test results are given in Tab le 48. They are based on the EMS levels and classes
defined in application note AN1709.
SymbolParameterConditions
V
FESD
Voltage limits to be applied on any I/O pin
to induce a functional disturbance
Fast transient voltage burst limits to be
V
EFTB
applied through 100 pF on VDD and V
pins to induce a functional disturbance
Table 48. EMS characteristics
= 3.3 V, LQFP100, TA = +25 °C,
V
DD
f
= 48 MHz,
HCLK
conforming to IEC 61000-4-2
V
= 3.3 V, LQFP100, TA = +25°C,
DD
f
SS
= 48 MHz,
HCLK
conforming to IEC 61000-4-4
Level/
Class
2B
4B
Designing hardened software to avoid noise problems
EMC characterization and optimization are performed at component level with a typical
application environment and simplified MCU software. It should be noted that good EMC
performance is highly dependent on the user application and the software in particular.
Therefore it is recommended that the user applies EMC software optimization and
prequalification tests in relation with the EMC level requested for his application.
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Software recommendations
The software flowchart must include the management of runaway conditions such as:
•Corrupted program counter
•Unexpected reset
•Critical Data corruption (for example control registers)
Prequalification trials
Most of the common failures (unexpected reset and program counter corruption) can be
reproduced by manually forcing a low state on the NRST pin or the Oscillator pins for 1
second.
To complete these trials, ESD stress can be applied directly on the device, over the range of
specification values. When unexpected behavior is detected, the software can be hardened
to prevent unrecoverable errors occurring (see application note AN1015).
Electromagnetic Interference (EMI)
The electromagnetic field emitted by the device are monitored while a simple application is
executed (toggling 2 LEDs through the I/O ports). This emission test is compliant with
IEC
61967-2 standard which specifies the test board and the pin loading.
Table 49. EMI characteristics
Symbol ParameterConditions
= 3.6 V, TA = 25 °C,
V
DD
S
EMI
Peak level
LQFP100 package
compliant with
IEC 61967-2
6.3.12 Electrical sensitivity characteristics
Based on three different tests (ESD, LU) using specific measurement methods, the device is
stressed in order to determine its performance in terms of electrical sensitivity.
Electrostatic discharge (ESD)
Electrostatic discharges (a positive then a negative pulse separated by 1 second) are
applied to the pins of each sample according to each pin combination. The sample size
depends on the number of supply pins in the device (3 parts × (n+1) supply pins). This test
conforms to the standards stated in the following table.
Monitored
frequency band
0.1 to 30 MHz-2
130 MHz to 1 GHz17
EMI Level4-
Max vs. [f
HSE/fHCLK
8/48 MHz
]
Unit
dBµV30 to 130 MHz27
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STM32F072x8 STM32F072xBElectrical characteristics
SymbolRatingsConditionsPackages Class
V
ESD(HBM)
V
ESD(CDM)
1. Data based on characterization results, not tested in production.
Electrostatic discharge voltage
(human body model)
Electrostatic discharge voltage
(charge device model)
Table 50. ESD absolute maximum ratings
TA = +25 °C, conforming to
ANSI/ESDA/JEDEC JS-001
TA = +25 °C, conforming to
ANSI/ESDA/JEDEC JS-002
All22000V
WLCSP49C1250
All othersC2a500
Static latch-up
Two complementary static tests are required on six parts to assess the latch-up
performance:
•A supply overvoltage is applied to each power supply pin.
•A current injection is applied to each input, output and configurable I/O pin.
These tests are compliant with EIA/JESD 78A IC latch-up standard.
SymbolParameterConditionsClass
LUStatic latch-up classT
Table 51. Electrical sensitivities
= +105 °C conforming to JESD78AII level A
A
Maximum
(1)
value
Unit
V
6.3.13 I/O current injection characteristics
As a general rule, current injection to the I/O pins, due to external voltage below VSS or
above V
product operation. However, in order to give an indication of the robustness of the
microcontroller in cases when abnormal injection accidentally happens, susceptibility tests
are performed on a sample basis during device characterization.
Functional susceptibility to I/O current injection
While a simple application is executed on the device, the device is stressed by injecting
current into the I/O pins programmed in floating input mode. While current is injected into
the I/O pin, one at a time, the device is checked for functional failures.
The failure is indicated by an out of range parameter: ADC error above a certain limit (higher
than 5 LSB TUE), out of conventional limits of induced leakage current on adjacent pins (out
of the -5
oscillator frequency deviation).
The characterization results are given in Tab le 52.
Negative induced leakage current is caused by negative injection and positive induced
leakage current is caused by positive injection.
(for standard, 3.3 V-capable I/O pins) should be avoided during normal
DDIOx
µA/+0 µA range) or other functional failure (for example reset occurrence or
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Electrical characteristicsSTM32F072x8 STM32F072xB
Table 52. I/O current injection susceptibility
SymbolDescription
Injected current on BOOT0 and PF1 pins–0NA
Injected current on PC0 pin–0+5
I
Injected current on PA11 and PA12 pins with induced
INJ
leakage current on adjacent pins less than -1 mA
Injected current on all other FT and FTf pins–5NA
Injected current on all other TTa, TC and RST pins–5+5
6.3.14 I/O port characteristics
General input/output characteristics
Unless otherwise specified, the parameters given in Tab le 53 are derived from tests
performed under the conditions summarized in Table 24: General operating conditions. All
I/Os are designed as CMOS- and TTL-compliant (except BOOT0).
Functional
susceptibility
Negative
injection
–5NA
Unit
Positive
injection
mA
Table 53. I/O static characteristics
SymbolParameterConditionsMinTypMaxUnit
(1)
TC and TTa I/O--0.3 V
FT and FTf I/O--0.475 V
Low level input
V
IL
voltage
High level input
V
IH
voltage
V
Schmitt trigger
hys
hysteresis
BOOT0--0.3 V
All I/Os except
BOOT0 pin
TC and TTa I/O0.445 V
FT and FTf I/O0.5 V
BOOT00.2 V
All I/Os except
BOOT0 pin
TC and TTa I/O-200
BOOT0-300
--0.3 V
(1)
DDIOx
DDIOx
DDIOx
0.7 V
+0.398
+0.2
+0.95
DDIOx
(1)
(1)
--
--
--
--
(1)
(1)
(1)
DDIOx
DDIOx
DDIOx
+0.07
–0.3
DDIOx
-
-
-
–0.2
(1)
(1)
V
V
mVFT and FTf I/O-100
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Table 53. I/O static characteristics (continued)
SymbolParameterConditionsMinTypMaxUnit
TC, FT and FTf I/O
TTa in digital mode
V
V
SS
IN
V
DDIOx
TTa in digital mode
I
lkg
Input leakage
(2)
current
V
DDIOx
V
IN
V
DDA
TTa in analog mode
V
V
IN
V
DDA
SS
FT and FTf I/O
V
DDIOx
V
IN
5 V
Weak pull-up
R
equivalent resistor
PU
(3)
VIN = V
SS
Weak pull-down
R
1. Data based on design simulation only. Not tested in production.
2. The leakage could be higher than the maximum value, if negative current is injected on adjacent pins. Refer to Table 52:
3. Pull-up and pull-down resistors are designed with a true resistance in series with a switchable PMOS/NMOS. This
equivalent
PD
C
IO
I/O current injection susceptibility.
PMOS/NMOS contribution to the series resistance is minimal (~10% order).
(3)
resistor
I/O pin capacitance--5-pF
VIN = - V
DDIOx
--± 0.1
--1
µA
--± 0.2
--10
254055k
254055k
All I/Os are CMOS- and TTL-compliant (no software configuration required). Their
characteristics cover more than the strict CMOS-technology or TTL parameters. The
coverage of these requirements is shown in
Figure 22 for standard I/Os, and in Figure 23 for
5 V-tolerant I/Os. The following curves are design simulation results, not tested in
production.
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Electrical characteristicsSTM32F072x8 STM32F072xB
MSv32130V4
1.61.82.02.22.42.62.83.03.23.43.6
0
0.5
1
1.5
2
2.5
3
TESTED RANGE
TESTED RANGE
V
IHmin
= 0.7 V
DDIOx
(CMOS standard requirement)
V
ILmax
= 0.3 V
DDIOx
(CMOS standard requirement)
UNDEFINED INPUT RANGE
V
IHmin
= 0.445 V
DDIOx
+ 0.398
V
ILmax
= 0.3 V
DDIOx
+ 0.07
V
IN
(V)
V
DDIOx
(V)
TTL standard requirement
TTL standard requirement
MSv32131V4
1.61.82.02.22.42.62.83.03.23.43.6
0
0.5
1
1.5
2
2.5
3
TESTED RANGE
TESTED RANGE
V
IHmin
= 0.7 V
DDIOx
(CMOS standard requirement)
V
ILmax
= 0.3 V
DDIOx
(CMOS standard requirement)
UNDEFINED INPUT RANGE
V
IHmin
= 0.5 V
DDIOx
+ 0.2
V
ILmax
= 0.475 V
DDIOx
- 0.2
V
IN
(V)
V
DDIOx
(V)
TTL standard requirement
TTL standard requirement
Figure 22. TC and TTa I/O input characteristics
Figure 23. Five volt tolerant (FT and FTf) I/O input characteristics
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Output driving current
The GPIOs (general purpose input/outputs) can sink or source up to +/-8 mA, and sink or
source up to +/- 20
mA (with a relaxed VOL/VOH).
In the user application, the number of I/O pins which can drive current must be limited to
respect the absolute maximum rating specified in
•The sum of the currents sourced by all the I/Os on V
consumption of the MCU sourced on V
I
(see Table 21: Voltage characteristics).
VDD
•The sum of the currents sunk by all the I/Os on V
the MCU sunk on V
, cannot exceed the absolute maximum rating I
SS
Section 6.2:
, plus the maximum
, cannot exceed the absolute maximum rating
DD
DDIOx
, plus the maximum consumption of
SS
VSS
(see
Table 21: Voltage characteristics).
Output voltage levels
Unless otherwise specified, the parameters given in the table below are derived from tests
performed under the ambient temperature and supply voltage conditions summarized in
Tab le 24: General operating conditions. All I/Os are CMOS- and TTL-compliant (FT, TTa or
TC unless otherwise specified).
Table 54. Output voltage characteristics
(1)
SymbolParameterConditionsMinMaxUnit
V
OL
Output low level voltage for an I/O pinCMOS port
(2)
-0.4
|IIO| = 8 mA
V
OH
V
OL
Output high level voltage for an I/O pinV
Output low level voltage for an I/O pinTTL port
V
DDIOx
2.7 V
(2)
–0.4-
DDIOx
-0.4
|IIO| = 8 mA
V
OH
V
OL
V
OH
V
OL
V
OH
V
OL
V
OH
V
OLFm+
1. The IIO current sourced or sunk by the device must always respect the absolute maximum rating specified in Table 21:
Voltage characteristics, and the sum of the currents sourced or sunk by all the I/Os (I/O ports and control pins) must always
respect the absolute maximum ratings
2. TTL and CMOS outputs are compatible with JEDEC standards JESD36 and JESD52.
3. Data based on characterization results. Not tested in production.
4. Data based on characterization results. Not tested in production.
Output high level voltage for an I/O pin2.4-
(3)
Output low level voltage for an I/O pin
(3)
Output high level voltage for an I/O pinV
(3)
Output low level voltage for an I/O pin
(3)
Output high level voltage for an I/O pinV
(4)
Output low level voltage for an I/O pin
(4)
Output high level voltage for an I/O pinV
Output low level voltage for an FTf I/O pin in
(3)
Fm+ mode
.
I
IO
2.7 V
V
DDIOx
|I
| = 20 mA
IO
V
2.7 V
DDIOx
|I
| = 6 mA
IO
V
2 V
DDIOx
| = 4 mA
|I
IO
|I
| = 20 mA
IO
2.7 V
V
DDIOx
|I
| = 10 mA-0.4V
IO
DDIOx
DDIOx
DDIOx
-1.3
–1.3-
-0.4
–0.4-
-0.4V
–0.4-V
-0.4V
V
V
V
V
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Electrical characteristicsSTM32F072x8 STM32F072xB
Input/output AC characteristics
The definition and values of input/output AC characteristics are given in Figure 24 and
Tab le 55, respectively. Unless otherwise specified, the parameters given are derived from
tests performed under the ambient temperature and supply voltage conditions summarized
in
Tab le 24: General operating conditions.
Table 55. I/O AC characteristics
(1)(2)
OSPEEDRy
[1:0] value
x0
01
11
SymbolParameterConditionsMinMaxUnit
(1)
f
max(IO)out
t
f(IO)out
t
r(IO)out
f
max(IO)out
t
f(IO)out
t
r(IO)out
f
max(IO)out
t
f(IO)out
t
r(IO)out
f
max(IO)out
t
f(IO)out
t
r(IO)out
f
max(IO)out
t
f(IO)out
t
r(IO)out
Maximum frequency
Output fall time-125
(3)
CL = 50pF, V
DDIOx
2 V
Output rise time-125
Maximum frequency
Output fall time-125
(3)
CL = 50pF, V
DDIOx
< 2 V
Output rise time-125
Maximum frequency
Output fall time-25
(3)
CL = 50pF, V
DDIOx
2 V
Output rise time-25
Maximum frequency
Output fall time-62.5
(3)
CL = 50pF, V
DDIOx
< 2 V
Output rise time-62.5
Maximum frequency
Output fall time
Output rise time
(3)
CL = 30 pF, V
C
= 50 pF, V
L
= 50 pF, 2 V V
C
L
= 50 pF, V
C
L
= 30pF, V
C
L
= 50pF, V
C
L
= 50pF, 2 V V
C
L
C
= 50pF, V
L
= 30pF, V
C
L
= 50pF, V
C
L
C
= 50pF, 2 V V
L
= 50pF, V
C
L
2.7 V-50
DDIOx
2.7 V-30
DDIOx
< 2.7 V-20
DDIOx
< 2 V-10
DDIOx
2.7 V-5
DDIOx
2.7 V-8
DDIOx
< 2.7 V-12
DDIOx
< 2 V-25
DDIOx
2.7 V-5
DDIOx
2.7 V-8
DDIOx
< 2.7 V-12
DDIOx
< 2 V-25
DDIOx
-2MHz
-1MHz
-10MHz
-4MHz
ns
ns
ns
ns
MHz
ns
82/128DS9826 Rev 6
STM32F072x8 STM32F072xBElectrical characteristics
MS32132V3
T
10%
50%
90%
10%
50%
90%
Maximum frequency is achieved if (t + t ) ≤
when loaded by C (see the table I/O AC characteristics definition)
rf
r(IO)out
t
f(IO)out
t
L
2
3
T and if the duty cycle is (45-55%)
(1)(2)
(continued)
DDIOx
DDIOx
-2MHz
2 V
-0.5MHz
< 2 V
OSPEEDRy
[1:0] value
Fm+
configuration
(4)
Table 55. I/O AC characteristics
SymbolParameterConditionsMinMaxUnit
(1)
f
max(IO)out
t
f(IO)out
t
r(IO)out
f
max(IO)out
t
f(IO)out
t
r(IO)out
Maximum frequency
Output fall time-12
Output rise time-34
Maximum frequency
Output fall time-16
Output rise time-44
(3)
CL = 50pF, V
(3)
CL = 50pF, V
Pulse width of external
-t
EXTIpw
signals detected by the
-10-ns
EXTI controller
1. The I/O speed is configured using the OSPEEDRx[1:0] bits. Refer to the STM32F0xxxx RM0091 reference manual for a
description of GPIO Port configuration register.
2. Guaranteed by design, not tested in production.
3. The maximum frequency is defined in Figure 24.
4. When Fm+ configuration is set, the I/O speed control is bypassed. Refer to the STM32F0xxxx reference manual RM0091
for a detailed description of Fm+ I/O configuration.
Figure 24. I/O AC characteristics definition
ns
ns
6.3.15 NRST pin characteristics
The NRST pin input driver uses the CMOS technology. It is connected to a permanent pullup resistor, R
Unless otherwise specified, the parameters given in the table below are derived from tests
performed under the ambient temperature and supply voltage conditions summarized in
Tab le 24: General operating conditions.
SymbolParameterConditionsMinTypMaxUnit
V
IL(NRST)
V
IH(NRST)
NRST input low level voltage---0.3 VDD+0.07
NRST input high level voltage-0.445 VDD+0.398
.
PU
Table 56. NRST pin characteristics
(1)
(1)
--
V
DS9826 Rev 683/128
99
Electrical characteristicsSTM32F072x8 STM32F072xB
MS19878V3
R
PU
V
DD
Internal reset
External
reset circuit
(1)
NRST
(2)
Filter
0.1 μF
Table 56. NRST pin characteristics (continued)
SymbolParameterConditionsMinTypMaxUnit
V
hys(NRST)
R
PU
V
F(NRST)
V
NF(NRST)
1. Data based on design simulation only. Not tested in production.
2. The pull-up is designed with a true resistance in series with a switchable PMOS. This PMOS contribution to the series
resistance is minimal (~10% order).
3. Data based on design simulation only. Not tested in production.
NRST Schmitt trigger voltage
hysteresis
Weak pull-up equivalent
(2)
resistor
NRST input filtered pulse---100
NRST input not filtered pulse
--200-mV
VIN = V
2.7 < V
2.0 < V
SS
< 3.6300
DD
< 3.6500
DD
254055k
(3)
(3)
--
--
(1)
Figure 25. Recommended NRST pin protection
ns
ns
1. The external capacitor protects the device against parasitic resets.
2. The user must ensure that the level on the NRST pin can go below the V
Table 56: NRST pin characteristics. Otherwise the reset will not be taken into account by the device.
6.3.16 12-bit ADC characteristics
Unless otherwise specified, the parameters given in Tab le 57 are derived from tests
performed under the conditions summarized in Table 24: General operating conditions.
Note:It is recommended to perform a calibration after each power-up.
SymbolParameter ConditionsMinTyp
V
DDA
I
DDA (ADC)
f
ADC
(2)
f
S
84/128DS9826 Rev 6
Analog supply voltage for
ADC ON
Current consumption of
the ADC
(1)
ADC clock frequency-0.6-14MHz
Sampling rate12-bit resolution0.043-1MHz
Table 57. ADC characteristics
-2.4-3.6V
V
= 3.3 V-0.9-mA
DDA
max level specified in
IL(NRST)
MaxUnit
STM32F072x8 STM32F072xBElectrical characteristics
Table 57. ADC characteristics (continued)
SymbolParameter ConditionsMinTyp
f
= 14 MHz,
f
TRIG
(2)
External trigger frequency
ADC
12-bit resolution
--823kHz
12-bit resolution--171/f
R
C
t
CAL
R
V
AIN
AIN
ADC
ADC
(2)
(2)(3)
Conversion voltage range-0 -V
External input impedance
Sampling switch
(2)
resistance
Internal sample and hold
(2)
capacitor
Calibration time
See Equation 1 and
Table 58 for details
--50k
---1k
---8pF
f
= 14 MHz5.9µs
ADC
-831/f
1.5 ADC
W
LATENCY
ADC_DR register ready
(2)(4)
latency
ADC clock = HSI14
ADC clock = PCLK/2 -4.5-
cycles + 2
f
cycles
PCLK
ADC clock = PCLK/4 -8.5 -
f
t
latr
Jitter
t
t
STAB
t
CONV
S
(2)
ADC
(2)
= f
ADC
Trigger conversion latency
f
ADC
f
= f
ADC
ADC jitter on trigger
conversion
Sampling time
(2)
Stabilization time-141/f
f
Total conversion time
(2)
12-bit resolution
(including sampling time)
12-bit resolution
/2 = 14 MHz0.196µs
PCLK
= f
f
ADC
PCLK
= f
f
ADC
= f
HSI14
f
ADC
f
= 14 MHz0.107-17.1µs
ADC
/2 5.5 1/f
PCLK
/4 = 12 MHz0.219 µs
/410.51/f
PCLK
= 14 MHz0.179-0.250µs
= f
HSI14
-1-1/f
-1.5-239.51/f
= 14 MHz,
ADC
1-18µs
14 to 252 (t
S
successive approximation)
for sampling +12.5 for
-
MaxUnit
DDA
1.5 ADC
cycles + 3
cycles
f
PCLK
f
PCLK
cycle
f
PCLK
cycle
PCLK
PCLK
HSI14
1/f
ADC
V
ADC
-
ADC
ADC
ADC
1. During conversion of the sampled value (12.5 x ADC clock period), an additional consumption of 100 µA on I
on IDD should be taken into account.
2. Guaranteed by design, not tested in production.
3. Specified value includes only ADC timing. It does not include the latency of the register access.
4. This parameter specify latency for transfer of the conversion result to the ADC_DR register. EOC flag is set at this time.
and 60 µA
DDA
DS9826 Rev 685/128
99
Electrical characteristicsSTM32F072x8 STM32F072xB
R
AIN
T
S
f
ADCCADC
2
N2+
()ln××
---------------------------------------------------------------- R
ADC
–<
Equation 1: R
max formula
AIN
The formula above (Equation 1) is used to determine the maximum external impedance
allowed for an error below 1/4 of LSB. Here N = 12 (from 12-bit resolution).
Ts (cycles)tS (µs)R
1.50.110.4
7.50.545.9
13.50.9611.4
28.52.0425.2
41.52.9637.2
55.53.9650
71.55.11NA
239.517.1NA
1. Guaranteed by design, not tested in production.
Table 58. R
max for f
AIN
= 14 MHz
ADC
max (k)
AIN
(1)
Table 59. ADC accuracy
(1)(2)(3)
SymbolParameterTest conditionsTypMax
ETTotal unadjusted error
= 48 MHz,
EOOffset error±1±1.5
EGGain error±0.5±1.5
EDDifferential linearity error±0.7±1
f
PCLK
f
= 14 MHz, R
ADC
= 3 V to 3.6 V
V
DDA
TA = 25 °C
< 10 k
AIN
±1.3±2
ELIntegral linearity error±0.8±1.5
ETTotal unadjusted error
= 48 MHz,
EOOffset error±1.9±2.8
EGGain error±2.8±3
EDDifferential linearity error±0.7±1.3
f
PCLK
= 14 MHz, R
f
ADC
V
= 2.7 V to 3.6 V
DDA
= - 40 to 105 °C
T
A
< 10 k
AIN
±3.3±4
ELIntegral linearity error±1.2±1.7
ETTotal unadjusted error
= 48 MHz,
EOOffset error±1.9±2.8
EGGain error±2.8±3
EDDifferential linearity error±0.7±1.3
f
PCLK
= 14 MHz, R
f
ADC
V
= 2.4 V to 3.6 V
DDA
= 25 °C
T
A
< 10 k
AIN
±3.3±4
ELIntegral linearity error±1.2±1.7
(4)
Unit
LSB
LSB
LSB
1. ADC DC accuracy values are measured after internal calibration.
86/128DS9826 Rev 6
STM32F072x8 STM32F072xBElectrical characteristics
ET = total unajusted error: maximum deviation
between the actual and ideal transfer curves.
E
O
= offset error: maximum deviation
between the first actual transition and
the first ideal one.
E
G
= gain error: deviation between the last
ideal transition and the last actual one.
ED = differential linearity error: maximum
deviation between actual steps and the ideal ones.
E
L
= integral linearity error: maximum deviation
between any actual transition and the end point
correlation line.
(1) Example of an actual transfer curve
(2) The ideal transfer curve
(3) End point correlation line
4095
4094
4093
7
6
5
4
3
2
1
0
23456
1
74093
4094 4095
4096
V
DDA
V
SSA
EO
ET
EL
EG
ED
1 LSB IDEAL
(1)
(3)
(2)
MS19880V2
2. ADC Accuracy vs. Negative Injection Current: Injecting negative current on any of the standard (non-robust) analog input
pins should be avoided as this significantly reduces the accuracy of the conversion being performed on another analog
input. It is recommended to add a Schottky diode (pin to ground) to standard analog pins which may potentially inject
negative current.
Any positive injection current within the limits specified for I
accuracy.
3. Better performance may be achieved in restricted V
, frequency and temperature ranges.
DDA
INJ(PIN)
and I
in Section 6.3.14 does not affect the ADC
INJ(PIN)
4. Data based on characterization results, not tested in production.
Figure 26. ADC accuracy characteristics
Figure 27. Typical connection diagram using the ADC
V
DDA
V
T
(1)
AIN
R
V
AIN
1. Refer to Table 57: ADC characteristics for the values of R
2. C
pad capacitance (roughly 7pF). A high C
this, f
represents the capacitance of the PCB (dependent on soldering and PCB layout quality) plus the
parasitic
should be reduced.
ADC
General PCB design guidelines
Power supply decoupling should be performed as shown in Figure 13: Power supply
scheme. The 10 nF capacitor should be ceramic (good quality) and it should be placed as
close as possible to the chip.
AINx
I
L
C
parasitic
(2)
V
T
value will downgrade conversion accuracy. To remedy
parasitic
±1 μA
AIN
, R
DS9826 Rev 687/128
Sample and hold ADC
R
ADC
and C
ADC
ADC
converter
converter
ADC
C
.
12-bit
MS33900V2
99
Electrical characteristicsSTM32F072x8 STM32F072xB
6.3.17 DAC electrical specifications
Table 60. DAC characteristics
SymbolParameterMinTypMaxUnitComments
Analog supply voltage for
DAC ON
Resistive load with buffer
(1)
ON
2.4-3.6 V-
5-- kLoad connected to V
25--kLoad connected to V
R
V
DDA
LOAD
When the buffer is OFF, the
R
O
buffer OFF
--15 k
Impedance output with
(1)
Minimum resistive load between
DAC_OUT and V
SS
1% accuracy is 1.5 M
Maximum capacitive load at
DAC_OUT pin (when the buffer
C
LOAD
(1)
Capacitive load--50pF
is ON).
DAC_OUT
(1)
min
Lower DAC_OUT voltage
with buffer ON
0.2 --V
It gives the maximum output
excursion of the DAC.
It corresponds to 12-bit input
code (0x0E0) to (0xF1C) at
DAC_OUT
max
DAC_OUT
min
DAC_OUT
max
I
DDA
Higher DAC_OUT voltage
(1)
with buffer ON
Lower DAC_OUT voltage
(1)
with buffer OFF
Higher DAC_OUT voltage
(1)
with buffer OFF
DAC DC current
(1)
consumption in quiescent
(2)
mode
V
--V
– 0.2 V
DDA
DDA
(0xEAB) at V
-0.5-mV
It gives the maximum output
excursion of the DAC.
--V
-- 600 µA
-- 700 µA
– 1LSBV
DDA
With no load, middle code
(0x800) on the input
With no load, worst code
(0xF1C) on the input
= 3.6 V and (0x155) and
= 2.4 V
DDA
SSA
DDA
to have a
-- ±0.5 LSB
--±2 LSB
--±1 LSB
--±4 LSB
DNL
INL
Differential non linearity
(3)
Difference between two
consecutive code-1LSB)
Integral non linearity
(difference between
measured value at Code i
(3)
and the value at Code i on a
line drawn between Code 0
and last Code 1023)
-- ±10 mV-
--±3 LSB
Offset
Offset error
(difference between
(3)
measured value at Code
(0x800) and the ideal value
= V
DDA
/2)
-- ±12LSB
88/128DS9826 Rev 6
Given for the DAC in 10-bit
configuration
Given for the DAC in 12-bit
configuration
Given for the DAC in 10-bit
configuration
Given for the DAC in 12-bit
configuration
Given for the DAC in 10-bit at
V
= 3.6 V
DDA
Given for the DAC in 12-bit at
= 3.6 V
V
DDA
STM32F072x8 STM32F072xBElectrical characteristics
Table 60. DAC characteristics (continued)
SymbolParameterMinTypMaxUnitComments
Gain error
(3)
Gain error--±0.5%
Given for the DAC in 12-bit
configuration
Settling time (full scale: for a
10-bit input code transition
t
SETTLING
(3)
highest input codes when
-34 µsC
LOAD
50 pF, R
LOAD
5 k
between the lowest and the
DAC_OUT reaches final
value ±1LSB
Max frequency for a correct
Update
rate
DAC_OUT change when
(3)
small variation in the input
--1 MS/sC
LOAD
50 pF, R
LOAD
5 k
code (from code i to i+1LSB)
t
WAKEUP
PSRR+
Wakeup time from off state
(3)
(Setting the ENx bit in the
DAC Control register)
Power supply rejection ratio
(1)
(to V
) (static DC
DDA
-6.510µs
-–67 –40 dBNo R
C
LOAD
50 pF, R
LOAD
5 k
input code between lowest and
highest possible ones.
LOAD
, C
LOAD
= 50 pF
measurement
1. Guaranteed by design, not tested in production.
2. The DAC is in “quiescent mode” when it keeps the value steady on the output so no dynamic consumption is involved.
3. Data based on characterization results, not tested in production.
Figure 28. 12-bit buffered / non-buffered DAC
Buffered/Non-buffered DAC
(1)
Buffer
RL
12-bit digital
to analog
converter
1. The DAC integrates an output buffer that can be used to reduce the output impedance and to drive external
loads directly without the use of an external operational amplifier. The buffer can be bypassed by
configuring the BOFFx bit in the DAC_CR register.
DAC_OUTx
CL
MS39009V1
DS9826 Rev 689/128
99
Electrical characteristicsSTM32F072x8 STM32F072xB
6.3.18 Comparator characteristics
Table 61. Comparator characteristics
SymbolParameterConditionsMin
(1)
Typ Max
(1)
Unit
dV
V
DDA
V
V
SC
t
S_SC
t
START
t
D
V
offset
offset
Analog supply voltage-V
IN
Comparator input
voltage range
V
REFINT
scaler offset
voltage
V
REFINT
scaler startup
First V
power on
scaler activation after device
REFINT
-0-V
--±5±10mV
time from power down
-3.6 V
DD
--
1000
DDA
(2)
-
ms
Next activations--0.2
Comparator startup
time
Startup time to reach propagation delay
specification
--60µs
Ultra-low power mode-24.5
Propagation delay for
200 mV step with
100 mV overdrive
Medium power mode-0.30.6
V
2.7 V-50100
High speed mode
DDA
< 2.7 V-100240
V
DDA
µsLow power mode-0.71.5
ns
Ultra-low power mode-27
Propagation delay for
full range step with
100 mV overdrive
Medium power mode-0.31.2
2.7 V-90180
V
High speed mode
DDA
< 2.7 V-110300
V
DDA
µsLow power mode-0.72.1
ns
Comparator offset error--±4±10mV
Offset error
/dT
temperature coefficient
--18-µV/°C
Ultra-low power mode-1.21.5
I
DD(COMP)
COMP current
consumption
Low power mode-35
Medium power mode-1015
High speed mode-75100
90/128DS9826 Rev 6
µA
STM32F072x8 STM32F072xBElectrical characteristics
1
10
100
1000
-40-20020406080100
t
S_SC(max)
(ms)
Temperature (°C)
2.0V ≤ V
DDA
< 2.4V
2.4V ≤ V
DDA
< 3.0V
3.0V ≤ V
DDA
< 3.6V
Table 61. Comparator characteristics (continued)
SymbolParameterConditionsMin
(1)
Typ Max
(1)
Unit
No hysteresis
(COMPxHYST[1:0]=00)
Low hysteresis
(COMPxHYST[1:0]=01)
V
hys
Comparator hysteresis
Medium hysteresis
(COMPxHYST[1:0]=10)
High hysteresis
(COMPxHYST[1:0]=11)
1. Data based on characterization results, not tested in production.
2. For more details and conditions see Figure 29: Maximum V
Figure 29. Maximum V
REFINT
REFINT
--0-
High speed mode3
All other power
modes
510
High speed mode7
All other power
modes
919
High speed mode18
All other power
modes
scaler startup time from power down.
1940
13
8
26
15
49
31
scaler startup time from power down
mV
DS9826 Rev 691/128
99
Electrical characteristicsSTM32F072x8 STM32F072xB
6.3.19 Temperature sensor characteristics
Table 62. TS characteristics
SymbolParameterMinTypMaxUnit
(1)
T
L
Avg_Slope
V
30
t
START
t
S_temp
1. Guaranteed by design, not tested in production.
2. Measured at V
Temperature sensor calibration values.
6.3.20 V
V
(1)
Average slope4.04.34.6mV/°C
Voltage at 30 °C (± 5 °C)
(1)
ADC_IN16 buffer startup time--10µs
ADC sampling time when reading the
(1)
temperature
DDA
BAT
linearity with temperature-± 1± 2°C
SENSE
(2)
1.341.431.52V
4--µs
= 3.3 V ± 10 mV. The V30 ADC conversion result is stored in the TS_CAL1 byte. Refer to Table 3:
monitoring characteristics
Table 63. V
monitoring characteristics
BAT
SymbolParameterMinTypMaxUnit
RResistor bridge for V
Q
(1)
Er
(1)
t
S_vbat
1. Guaranteed by design, not tested in production.
Ratio on V
BAT
Error on Q–1-+1%
ADC sampling time when reading the V
BAT
measurement-2--
BAT
-2 x 50- k
4--µs
6.3.21 Timer characteristics
The parameters given in the following tables are guaranteed by design.
Refer to Section 6.3.14: I/O port characteristics for details on the input/output alternate
function characteristics (output compare, input capture, external clock, PWM output).
SymbolParameterConditionsMinTypMaxUnit
t
res(TIM)
Timer resolution time
Timer external clock
f
EXT
frequency on CH1 to
CH4
16-bit timer maximum
period
t
MAX_COUNT
32-bit counter
maximum period
92/128DS9826 Rev 6
Table 64. TIMx characteristics
f
f
TIMxCLK
f
f
= 48 MHz-20.8-ns
TIMxCLK
= 48 MHz-24-MHz
= 48 MHz-1365-µs
TIMxCLK
= 48 MHz-89.48-s
TIMxCLK
--1-
--
f
TIMxCLK
--
--
/2
16
2
32
2
t
TIMxCLK
-MHz
t
-
TIMxCLK
t
-
TIMxCLK
STM32F072x8 STM32F072xBElectrical characteristics
Prescaler dividerPR[2:0] bits
/1620.41638.4
/3230.83276.8
/6441.66553.6
/12853.213107.2
/2566 or 76.426214.4
1. These timings are given for a 40 kHz clock but the microcontroller internal RC frequency can vary from 30
to 60 kHz. Moreover, given an exact RC oscillator frequency, the exact timings still depend on the phasing
of the APB interface clock versus the LSI clock so that there is always a full RC period of uncertainty.
Table 65. IWDG min/max timeout period at 40 kHz (LSI)
Min timeout RL[11:0]=
0x000
/400.1409.6
/810.2819.2
Max timeout RL[11:0]=
Table 66. WWDG min/max timeout value at 48 MHz (PCLK)
0xFFF
(1)
Unit
ms
ms
830.682643.6906
6.3.22 Communication interfaces
I2C interface characteristics
The I2C interface meets the timings requirements of the I2C-bus specification and user
manual rev. 03 for:
•Standard-mode (Sm): with a bit rate up to 100 kbit/s
•Fast-mode (Fm): with a bit rate up to 400 kbit/s
•Fast-mode Plus (Fm+): with a bit rate up to 1 Mbit/s.
The I2C timings requirements are guaranteed by design when the I2Cx peripheral is
properly configured (refer to Reference manual).
The SDA and SCL I/O requirements are met with the following restrictions: the SDA and
SCL I/O pins are not “true” open-drain. When configured as open-drain, the PMOS
connected between the I/O pin and V
support Fm+ low level output current maximum requirement. Refer to
port characteristics for the I2C I/Os characteristics.
All I2C SDA and SCL I/Os embed an analog filter. Refer to the table below for the analog
filter characteristics:
is disabled, but is still present. Only FTf I/O pins
DDIOx
Section 6.3.14: I/O
DS9826 Rev 693/128
99
Electrical characteristicsSTM32F072x8 STM32F072xB
Table 67. I2C analog filter characteristics
(1)
SymbolParameterMinMaxUnit
t
AF
1. Guaranteed by design, not tested in production.
2. Spikes with widths below t
3. Spikes with widths above t
Maximum width of spikes that are
suppressed by the analog filter
are filtered.
AF(min)
are not filtered
AF(max)
50
(2)
260
(3)
ns
SPI/I2S characteristics
Unless otherwise specified, the parameters given in Tab le 68 for SPI or in Ta bl e 69 for I2S
are derived from tests performed under the ambient temperature, f
supply voltage conditions summarized in
Tabl e 24: General operating conditions.
Refer to Section 6.3.14: I/O port characteristics for more details on the input/output alternate
function characteristics (NSS, SCK, MOSI, MISO for SPI and WS, CK, SD for I2S).
Table 68. SPI characteristics
SymbolParameterConditionsMinMaxUnit
f
SCK
1/t
c(SCK)
t
r(SCK)
t
f(SCK)
t
su(NSS)
t
h(NSS)
t
w(SCKH)
t
w(SCKL)
t
su(MI)
t
su(SI)
t
h(MI)
t
h(SI)
(2)
t
a(SO)
(3)
t
dis(SO)
t
v(SO)
t
v(MO)
t
h(SO)
t
h(MO)
DuCy(SCK)
SPI clock frequency
SPI clock rise and fall
time
NSS setup time Slave mode4Tpclk-
NSS hold timeSlave mode2Tpclk + 10-
SCK high and low time
Data input setup time
Data input hold time
Data output access timeSlave mode, f
Data output disable time Slave mode018
Data output valid timeSlave mode (after enable edge)-22.5
Data output valid timeMaster mode (after enable edge)-6
Data output hold time
SPI slave input clock
duty cycle
Master mode-18
Slave mode- 18
Capacitive load: C = 15 pF- 6ns
Master mode, f
= 36 MHz,
PCLK
presc = 4
Master mode4-
Slave mode5-
Master mode4-
Slave mode5-
= 20 MHz 03Tpclk
PCLK
Slave mode (after enable edge)11.5-
Master mode (after enable edge)2-
Slave mode2575%
(1)
Tpclk/2 -2Tpclk/2 + 1
frequency and
PCLKx
MHz
ns
1. Data based on characterization results, not tested in production.
2. Min time is for the minimum time to drive the output and the max time is for the maximum time to validate the data.
3. Min time is for the minimum time to invalidate the output and the max time is for the maximum time to put the data in Hi-Z
1. Data based on characterization results, not tested in production.
2. LSB transmit/receive of the previously transmitted byte. No LSB transmit/receive is sent before the first
byte.
98/128DS9826 Rev 6
STM32F072x8 STM32F072xBElectrical characteristics
USB characteristics
The STM32F072x8/xB USB interface is fully compliant with the USB specification version
2.0 and is USB-IF certified (for Full-speed device operation).
SymbolParameterConditionsMin.TypMax.Unit
Table 70. USB electrical characteristics
V
DDIO2
t
STARTUP
R
PUI
USB transceiver operating
voltage
(2)
USB transceiver startup time---1.0µs
Embedded USB_DP pull-up
value during idle
-3.0
-1.11.261.5
(1)
-3.6V
k
R
PUR
Z
DRV
1. The STM32F072x8/xB USB functionality is ensured down to 2.7 V but not the full USB electrical
characteristics which are degraded in the 2.7-to-3.0 V voltage range.
2. Guaranteed by design, not tested in production.
3. No external termination series resistors are required on USB_DP (D+) and USB_DM (D-); the matching
impedance is already included in the embedded driver.
Embedded USB_DP pull-up
value during reception
(2)
Output driver impedance
(3)
-2.02.262.6
Driving high
and low
284044
CAN (controller area network) interface
Refer to Section 6.3.14: I/O port characteristics for more details on the input/output alternate
function characteristics (CAN_TX and CAN_RX).
DS9826 Rev 699/128
99
Package informationSTM32F072x8 STM32F072xB
A0C2_ME_V5
Seating plane
A1
e
Z
Z
D
M
Øb (100 balls)
A
E
TOP VIEWBOTTOM VIEW
112
A1 ball
identifier
e
A
A2
Y
X
Z
ddd Z
D1
E1
eee
ZYX
fffØØ
M
M
Z
A3
A4
A1 ball
index area
7 Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at:
ECOPACK® is an ST trademark.
7.1 UFBGA100 package information
UFBGA100 is a 100-ball, 7 × 7 mm, 0.50 mm pitch, ultra-fine-profile ball grid array
package.
Figure 35. UFBGA100 package outline
www.st.com.
1. Drawing is not to scale.
Table 71. UFBGA100 package mechanical data
millimetersinches
Symbol
Min.Typ.Max.Min.Typ.Max.
A --0.600 --0.0236
A1 --0.110 --0.0043
A2 -0.450 --0.0177-
A3 - 0.130--0.00510.0094
A4 -0.320 --0.0126 -
100/128DS9826 Rev 6
(1)
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