300 W motor control power board based on STIPQ3M60T-H SLLIMM™-nano 2nd
series MOSFET IPM
Introduction
The STEV
module) 2nd series based on N-channel Power MOSFET MDmesh™ DM2 fast-recovery diode (STIPQ3M60T-HL). It provides
an affordable and easy-to-use solution for driving high power motors in a wide range of applications such as power white goods,
air conditioning, compressors, power fans and 3-phase inverters for motor drives in general.
The IPM itself consists of six MOSFETs, three high voltage half-bridge gate driver ICs and a wide range of features like
undervoltage lockout, smart shutdown, internal temperature sensor and NTC, overcurrent protection and internal op-amp.
The main characteristics of this evaluation board are small size, minimal BOM and high efficiency. It features an interface
circuit (BUS and VCC connectors), bootstrap capacitors, snubber capacitor, hardware short-circuit protection, fault event signal
and temperature monitoring. It is designed to work in single- or three-shunt configuration and with triple current sensing
options: three dedicated on-board op-amps, op-amps embedded on MCU or single internal IPM op-amp. The Hall/Encoder part
completes the circuit.
The system is designed to achieve accurate and fast conditioning of current feedback to satisfy the typical requirements for field
oriented control (FOC).
The STEVAL-IPMNM3Q is compatible with ST’s control board based on STM32, providing a complete platform for motor
control.
AL-IPMNM3Q is a compact motor drive power board equipped with SLLIMM-nano (small low-loss intelligent molded
Figure 1. Motor control board based on SLIMM-nano 2nd
series - top view
Figure 2. Motor control board based on SLIMM-nano 2nd
series - bottom view
UM2682 - Rev 2 - November 2020
For further information contact your local STMicroelectronics sales of
fice.
www.st.com
1Key features
UM2682
Key features
•Input voltage: from 125 to 400 V
•
Nominal power: up to 300 W
DC
–Allowable maximum power is related to the application conditions and cooling system
•Nominal current: up to 1.1 Arms
•Input auxiliary voltage: up to 20 V
DC
•Single- or three-shunt resistors for current sensing (with sensing network)
•Three options for current sensing: dedicated external op-amps, internal SLLIMM-nano or via MCU
•Overcurrent hardware protection
•IPM temperature monitoring and protection
•Hall sensor or encoder input
•MOSFETs intelligent power module
–SLLIMM-nano 2nd series IPM STIPQ3M60T-H - Full molded package
•Motor control connector (32 pins) interfacing with ST MCU boards
•Universal design for further evaluation with breadboard and testing pins
•Very compact size
•WEEE compliant
•RoHS compliant
UM2682 - Rev 2
page 2/31
2Circuit schematics
The full schematics for the SLLIMM-nano card for STIPQ3M60T-H IPM products is shown below. This card
consists of an interface circuit (BUS and VCC connectors), bootstrap capacitors, snubber capacitor
protection, fault output circuit, temperature monitoring, single-/three-shunt resistors and filters for input signals. It
also includes bypass capacitors for VCC and bootstrap capacitors. The capacitors are located very close to the
drive IC to avoid malfunction due to noise.
Three current sensing options are provided: three dedicated onboard op-amps, one internal IPM op-amp and the
embedded MCU op-amps; selection is performed through three jumpers.
The Hall/Encoder section (powered at 5 V or 3.3 V) completes the circuit.
The board is designed for a 125 VDC to 400 VDC supply voltage.
An appropriate bulk capacitor for the power level of the application must be mounted at the dedicated position on
the board.
The SLLIMM-nano integrates six MOSFET switches and high voltage gate drivers. Thanks to this integrated
module, the system of
increases reliability.
The board offers the added flexibility of being able to operate in single- or three-shunt configuration by modifying
solder bridge jumper settings (see Section 4.3.4 Single- or three-shunt selection).
fers power inversion in a simple and compact design that requires less PCB area and
UM2682
Main characteristics
Figure 8. STEVAL-IPMNM3Q architecture
UM2682 - Rev 2
page 9/31
GADG221020181007IG
0
1
2
3
4
5
05101520
C
BOOT Calculated
(µF)
fsw(kHz)
STIPN2M50x-Hy
δ=50%
ΔV
CBOOT
=0.1V
ΔV
CBOOT
=0.3V
ΔV
CBOOT
=0.5V
UM2682
Filters and key parameters
4Filters and key parameters
4.1Input signals
The input signals (LINx and HINx) to drive the internal MOSFETs are active high. A 375 kΩ (typ.) pull-down
resistor is built-in for each input signal. T
close as possible to the IPM. The filter is designed using a time constant of 10 ns (1 kΩ and 10 pF).
4.2Bootstrap capacitor
In the 3-phase inverter, the emitters of the low side MOSFETs are connected to the negative DC bus (VDC-)
as common reference ground, which allows all low side gate drivers to share the same power supply, while the
emitter of the high side MOSFETs is alternatively connected to the positive (VDC+) and negative (VDC-) DC bus
during running conditions.
A bootstrap method is a simple and cheap solution to supply the high voltage section. This function is normally
accomplished by a high voltage fast recovery diode. The SLLIMM-nano MOSFET-based family includes a
patented integrated structure that replaces the external diode with a high voltage DMOS functioning as a diode
with series resistor. An internal charge pump provides the DMOS driving voltage.
The value of the CBOOT capacitor should be calculated according to the application requirements.
Figure 9. CBOOT graph selection shows the behavior of CBOOT (calculated) versus switching frequency (fsw),
with different values of ΔVCBOOT for a continuous sinusoidal modulation and a duty cycle δ = 50%.
Note:This curve is taken from application note AN5244 (available on www.st.com); calculations are based on the
STIPN2M50x-Hy device, which represents the worst case scenario for this kind of calculation.
The boot capacitor must be two or three times larger than the C
For this design, a value of 2.2 μF was selected.
o prevent input signal oscillation, an RC filter is added on each input as
calculated in the graph.
BOOT
4.3Overcurrent protection
The SLLIMM-nano MOSFET-based integrates a comparator for fault sensing purposes. The comparator has an
internal voltage reference VREF (540 mV typ.) connected to the inverting input, while the non-inverting input on
the CIN pin can be connected to an external shunt resistor to implement the overcurrent protection function.
When the comparator triggers, the device enters the shutdown state.
The comparator output is connected to the SD pin in order to send the fault message to the MCU.
Figure 9. CBOOT graph selection
UM2682 - Rev 2
page 10/31
4.3.1SD pin
The SD is an input/output pin (open drain type if used as output) used for enable and fault; it is shared with NTC
thermistor
, internally connected to GND.
The pull-up resistor (R10) causes the voltage VSD-GND to decrease as the temperature increases. To maintain
the voltage above the high-level logic threshold, the pull-up resistor is sized at 1 kΩ (3.3 V MCU power supply).
The filter on
SD (R10 and C18) must be sized to obtain the desired re-starting time after a fault event and placed
as close as possible to the pin.
A shutdown event can be managed by the MCU; in which case, the SD functions as the input pin.
Conversely
, the SD functions as an output pin when an overcurrent or undervoltage condition is detected.
4.3.2Shunt resistor selection
The value of the shunt resistor is calculated by the following equation:
Where V
The maximum OC protection level should be set to less than the pulsed collector current in the datasheet. In this
design the over current threshold level was fixed at IOC = 2.3 A in order to select a commercial shunt resistor
value.
Where VF is the voltage drop across diodes D3, D4 and D5.
The commercial value chosen was 0.33
The power rating of the shunt resistor is calculated by the following equation:
where:
•Maximum load current of inverter: I
•Shunt resistor value at TC = 25 °C
•Power derating ratio of shunt resistor at TSH =100 °C
•Safety margin of 30%
I
load(max)
Power shunt value is:
Considering available commercial values, a 1 W shunt resistor was selected.
Based on the previous equations and conditions, the minimum shunt resistance and power rating is summarized
below
is the internal comparator (CIN) (0.54 V typ.) and IOC is the overcurrent detection level.
ref
RSH=
is calculated considering the RMS value of the IPM nominal current including a safety margin:
.
UM2682
Overcurrent protection
V
f
RSH=
R23
V
re
f
+ R53
⋅
R53
I
OC
+ V
Ω to which corresponds a level of 2.6 A.
2
I
l
oad
1
I
oad
l
PSH=
max
PSH=
2
load(max)
I
=
1
2
⋅
nom@80°C
1.05² ⋅ 0.33 ⋅ 1.3
⋅
re
I
OC
0.54 ⋅
F
=
⋅
max
Derating ratio
2
0.8
(1)
1000 + 4700
4700
2.3
RSH⋅ margin
× 0.85 = 1.05Arms(4)
0.298W(5)
=
+ 0.18
0.367Ω(2)
=
(3)
DeviceOCP(peak) [A]
STIPQ3M60T-HL2.61.050.331
4.3.3CIN RC filter
An RC filter network on the CIN pin is required to prevent short-circuits due to the noise on the shunt resistor. In
this design, the R15-C8 RC filter has a constant time of about 1
UM2682 - Rev 2
Table 1. Shunt selection
I
[Arms]R
load(max)
μs.
SHUNT
[Ω]
Shunt
power rating PSH [W]
page 11/31
4.3.4Single- or three-shunt selection
Single- or three-shunt resistor circuits can be adopted by setting the solder bridges SW5, SW6, SW7 and SW8.
The figures below illustrate how to set up the two configurations.
UM2682
Overcurrent protection
Figure 10. One-shunt configuration
Figure 11. Three-shunt configuration
Further details regarding sensing configuration are provided in the next section.
UM2682 - Rev 2
page 12/31
5Current sensing amplifying network
The STEVAL-IPMNM3Q motor control evaluation board can be configured to run in three-shunt or single-shunt
configurations for field oriented control (FOC).
The current can be sensed thanks to the shunt resistor and amplified by using the on-board operational amplifiers
or by the MCU (if equipped with op-amp).
Once the shunt configuration is chosen by setting solder bridge on SW5, SW6, SW7 and SW8 (as described in
Section 4.3.4 Section 5.3.4 Single- or three-shunt selection), the user can choose whether to send the voltage
shunt to the MCU amplified or not amplified.
Single-shunt configuration requires a single op amp so the only voltage sent to the MCU to control the sensing is
connected to phase V through SW2.
SW1, SW2, SW3 and SW17 can be configured to select which signals are sent to the microcontroller
following table.
The operational amplifier TSV994 used on the amplifying networks has a 20 MHz gain bandwidth from a single
positive supply of 3.3 V
.
The amplification network must allow bidirectional current sensing, so an output offset VO = +1.65 V represents
zero current.
For the STIPQ3M60T-H (I
OCP
= 2.6 A; R
= 0.33 Ω), the maximum measurable phase current, considering
SHUNT
that the output swings from +1.65 V to +3.3 V (MCU supply voltage) for positive currents and from +1.65 V to 0 for
negative currents is:
MaxMeasCurrent =
rm=
MaxMeas
ΔV
Current
ΔV
2.6A(6)
=
r
m
1.65
=
0.635Ω(7)
=
2.6
The overall trans-resistance of the two-port network is:
rm= R
AMP =
Finally choosing Ra=Rb and Rc=Rd, the dif
⋅ AMP = 0.33 ⋅ AMP = 0.635Ω(8)
S
HUNT
R
S
r
HUNT
0.635
m
=
=
1.924(9)
0.33
ferential gain of the circuit is:
R
AMP =
c
=
1.9(10)
R
a
An amplification gain of 1.9 was chosen. The same amplification is obtained for all the other devices, taking into
account the OCP current and the shunt resistance, as described in T
able 1. Shunt selection.
The RC filter for output amplification is designed to have a time constant that matches noise parameters in the
range of 1.5 μs:
4 ⋅
τ = 4 ⋅ Re⋅ Cc= 1.5µs(11)
1.5µs
CC=
4 ⋅ 1000
=
375pF
330p
Fselected
(12)
UM2682 - Rev 2
page 13/31
Table 3. Amplifying networks
UM2682
Current sensing amplifying network
Phase
Phase A (U)
Phase B (V)R26R27R25R29R43C29
Phase C (W)R30R32R28R33R31C31
RaRbRcRdReCc
R21R23R20R24R22C25
Amplifying networkRC filter
UM2682 - Rev 2
page 14/31
6Temperature monitoring
The SLLIMM-nano MOSFET family integrates an NTC thermistor placed close to the power stage. The board is
designed to use it in sharing with the SD pin. Monitoring can be enabled and disabled via the SW4 switch.
6.1NTC Thermistor
The built-in thermistor (85 kΩ at 25 °C) is inside the IPM and connected on SD /OD pin2 (shared with the SD
function).
Given the NTC characteristic and the sharing with the SD function, the network is designed to keep the voltage on
this pin higher than the minimum voltage required for the pull up voltage on this pin over the whole temperature
range.
Considering Vbias = 3.3 V
The figure below shows the typical voltage on this pin as a function of device temperature.
, a pull up resistor of 1 kΩ (R10) was used.
Figure 12. NTC voltage vs temperature
UM2682
Temperature monitoring
UM2682 - Rev 2
page 15/31
Firmware configuration for STM32 PMSM FOC SDK
7Firmware configuration for STM32 PMSM FOC SDK
The following table summarizes the parameters which customize the latest version of the ST FW motor
control library for permanent magnet synchronous motors (PMSM): STM32 PMSM FOC SDK for this STEV
IPMNM3Q.
Table 4. ST motor control workbench GUI parameters - STEVAL-IPMNM3Q
BlockParameterValue
⋅
Comparator threshold
Over current protection
Bus voltage sensingBus voltage divider1/125
Rated bus voltage info
Current sensing
Command stage
Overcurrent network offset0
Overcurrent network gain
Min rated voltage125 V
Max rated voltage400 V
Nominal voltage325 V
Current reading typologySingle- or three-shunt
Shunt resistor valueSee T
Amplifying network gain1.9
Phase U DriverHS and LS: Active high
Phase V DriverHS and LS: Active high
Phase W DriverHS and LS: Active high
V
f
re
Comparator threshold / Iocp (see
T
able 1. Shunt selection)
able 1. Shunt selection
R15
+ R11
R11
+ VF=
UM2682
AL-
0.83V(13)
UM2682 - Rev 2
page 16/31
8Connectors, jumpers and test pins
Table 5. Connectors
ConnectorDescription / pinout
Supply connector (DC – 125 V to 400 V)
J1
J2
J3
J4
J5
Positive +
•
•Negative -
Motor control connector
1 - emergency stop
3 - PWM-A-H
5 - PWM-A-L
7 - PWM-B-H
9 - PWM-B-L
1
1 - PWM-C-H
13 - PWM-C-L
15 - current phase A
17 - current phase B
19 - current phase C
21 - NTC bypass relay
23 - dissipative brake PWM
25 - +V power
27- PFC sync.
29 - PWM VREF
31 - measure phase A
33 - measure phase B
Motor connector
•
phase A (U)
•phase B (V)
•phase C (W)
VCC supply (20 VDC max)
•
Positive +
•Negative -
Hall sensors / encoder input connector
1.Hall sensors input 1 / encoder A+
2.Hall sensors input 2 / encoder B+
3.Hall sensors input 3 / encoder Z+
4.3.3 or 5 Vdc
5.GND
UM2682
Connectors, jumpers and test pins
2 - GND
4 - GND
6 - GND
8 - GND
10 - GND
12 - GND
14 - HV bus voltage
16 - GND
18 - GND
20 - GND
22 - GND
24 - GND
26 - heat sink temperature
28 - VDD_m
30 - GND
32 - GND
34 - measure phase C
UM2682 - Rev 2
page 17/31
UM2682
Connectors, jumpers and test pins
Table 6. Jumpers
JumperDescripton
Choose current U to send to control board
SW1
SW2
SW3
SW4Enable or disable sending temperature information from NTC to microcontroller
SW5, SW6
SW7, SW8
SW9, SW16
SW10, SW13Modify phase A hall sensor network
SW11, SW14Modify phase B hall sensor network
SW12, SW15Modify phase C hall sensor network
SW17
Jumper on 1-2: from amplification
Jumper on 2-3: directly from motor
output
Choose current V to send to control board
Jumper on 1-2: from amplification
Jumper on 2-3: directly from motor
output
Choose current W to send to control board
Jumper on 1-2: from amplification
Jumper on 2-3: directly from motor
output
Choose 1-shunt or 3-shunt configuration. (through solder bridge)
SW5, SW6 closedone shunt
SW7, SW8 openthree shunt
Choose input power for Hall/Encoder
Jumper on 1-2: 5 V
Jumper on 2-3: 3.3 V
Choose on-board or IPM op-amp in one shunt configuration
, 3 A, 1.6
Ω max., 600 V Nchannel MDmesh
DM2, N2DIP-26L
package
TE
Connectivity
STSTIPQ3M60T-HL
881545-2
UM2682
Bill of material
UM2682 - Rev 2
page 22/31
10PCB design guide
Optimization of PCB layout for high voltage, high current and high switching frequency applications is a critical
point. PCB layout is a complex matter as it includes several aspects, such as length and width of track and circuit
areas, but also the proper routing of the traces and the optimized reciprocal arrangement of the various system
elements in the PCB area.
A good layout can help the application to properly function and achieve expected performance. On the other
hand, a PCB without a careful layout can generate EMI issues, provide overvoltage spikes due to parasitic
inductance along the PCB traces and produce higher power loss and even malfunction in the control and sensing
stages.
In general, these conditions were applied during the design of the board:
•
PCB traces designed as short as possible and the area of the circuit (power or signal) minimized to avoid the
sensitivity of such structures to surrounding noise
•Good distance between switching lines with high voltage transitions and the signal line sensitive to electrical
noise
•The shunt resistors were placed as close as possible to the low side pins of the SLLIMM. To decrease the
parasitic inductance, a low inductance type resistor was used
•RC filters were placed as close as possible to the SLLIMM pins in order to increase their efficiency
UM2682
PCB design guide
10.1Layout of reference board
All the components are inserted on the top of the board. Only the IPM module is inserted on the bottom to allow
the insertion of a suitable heatsink for the application.
Figure 13. Silk screen and etch - top side
UM2682 - Rev 2
page 23/31
Figure 14. Silk screen and etch - bottom side
UM2682
Layout of reference board
UM2682 - Rev 2
page 24/31
11Recommendations and suggestions
•The BOM list is not provided with a bulk capacitor already inserted in the PCB. However, the necessary
space has been included (C1).In order to obtain a stable supply voltage, according to the application
conditions and current ripple requirements, it's advisable to use an adequate bulk capacitor
motor control applications, an electrolytic capacitor of at least 100 μF is suggested
•Similary, the PCB does not come with an heat sink, it can be placed above the IPM on the back of the
PCB with thermal conductive foil and screws. Heat sink RTH value is an important factor for good thermal
performance and depends on certain factors such as current phase, switching frequency, power factor and
ambient temperature.
•For an adequate heat sink dimensioning, it is suggest to use ST PowerStudio software (STSWPOWERSTUDIO), available on www.st.com.
•The board requires +5 V and +3.3 V to be supplied externally through the 34-pin motor control connector J2.
Please refer to the relevant board manuals for information on key connections and supplies.
UM2682
Recommendations and suggestions
. For general
UM2682 - Rev 2
page 25/31
UM2682
General safety instructions
12General safety instructions
Danger:
The evaluation board works with high voltage which could be deadly for the users. Furthermore
all circuits on the board are not isolated from the line input. Due to the high power density
components on the board as well as the heat sink can be heated to a very high temperature,
which can cause a burning risk when touched directly. This board is intended for use by
experienced power electronics professionals who understand the precautions that must be taken
to ensure that no danger or risk may occur while operating this board.
Caution:After the operation of the evaluation board, the bulk capacitor C1 (if used) may still store a high energy for
several minutes. So it must be first discharged before any direct touching of the board.
Important:
To protect the bulk capacitor C1, we strongly recommended using an external brake chopper after C1 (to discharge the high
brake current back from the induction motor).
, the
UM2682 - Rev 2
page 26/31
Revision history
able 9. Document revision history
T
DateVersionChanges
20-Mar-20201Initial release.
Update figure in introduction.
17-Nov-20202
Updated Section 9 Bill of material
Updated Section 2.1 Schematic diagrams
Some edit changes to improve reabability
UM2682
.
UM2682 - Rev 2
page 27/31
UM2682
Contents
Contents
1Key features .......................................................................2
Figure 12. NTC voltage vs temperature.......................................................... 15
Figure 13. Silk screen and etch - top side ........................................................ 23
Figure 14. Silk screen and etch - bottom side...................................................... 24
AL-IPMNM3Q board schematic (1 of 5) ............................................... 4
UM2682 - Rev 2
page 30/31
UM2682
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