STMicroelectronics STIPQ3M60T-H SLLIMM User Manual

UM2682

User manual

300 W motor control power board based on STIPQ3M60T-H SLLIMM™-nano 2nd

series MOSFET IPM

Introduction

The STEV module) 2nd series based on N-channel Power MOSFET MDmesh™ DM2 fast-recovery diode (STIPQ3M60T-HL). It provides an affordable and easy-to-use solution for driving high power motors in a wide range of applications such as power white goods, air conditioning, compressors, power fans and 3-phase inverters for motor drives in general.

The IPM itself consists of six MOSFETs, three high voltage half-bridge gate driver ICs and a wide range of features like undervoltage lockout, smart shutdown, internal temperature sensor and NTC, overcurrent protection and internal op-amp. The main characteristics of this evaluation board are small size, minimal BOM and high efficiency. It features an interface circuit (BUS and VCC connectors), bootstrap capacitors, snubber capacitor, hardware short-circuit protection, fault event signal and temperature monitoring. It is designed to work in single- or three-shunt configuration and with triple current sensing options: three dedicated on-board op-amps, op-amps embedded on MCU or single internal IPM op-amp. The Hall/Encoder part completes the circuit.

The system is designed to achieve accurate and fast conditioning of current feedback to satisfy the typical requirements for field oriented control (FOC).

The STEVAL-IPMNM3Q is compatible with ST’s control board based on STM32, providing a complete platform for motor control.

AL-IPMNM3Q is a compact motor drive power board equipped with SLLIMM-nano (small low-loss intelligent molded

Figure 1. Motor control board based on SLIMM-nano 2nd

series - top view

Figure 2. Motor control board based on SLIMM-nano 2nd

series - bottom view

UM2682 - Rev 2 - November 2020

For further information contact your local STMicroelectronics sales of

fice.

www.st.com

1 Key features

UM2682

Key features

• Input voltage: from 125 to 400 V

•

Nominal power: up to 300 W

– Allowable maximum power is related to the application conditions and cooling system

• Nominal current: up to 1.1 Arms

• Input auxiliary voltage: up to 20 V

• Single- or three-shunt resistors for current sensing (with sensing network)

• Three options for current sensing: dedicated external op-amps, internal SLLIMM-nano or via MCU

• Overcurrent hardware protection

• IPM temperature monitoring and protection

• Hall sensor or encoder input

• MOSFETs intelligent power module

– SLLIMM-nano 2nd series IPM STIPQ3M60T-H - Full molded package

• Motor control connector (32 pins) interfacing with ST MCU boards

• Universal design for further evaluation with breadboard and testing pins

• Very compact size

• WEEE compliant

• RoHS compliant

UM2682 - Rev 2

page 2/31

2 Circuit schematics

The full schematics for the SLLIMM-nano card for STIPQ3M60T-H IPM products is shown below. This card consists of an interface circuit (BUS and VCC connectors), bootstrap capacitors, snubber capacitor protection, fault output circuit, temperature monitoring, single-/three-shunt resistors and filters for input signals. It also includes bypass capacitors for VCC and bootstrap capacitors. The capacitors are located very close to the drive IC to avoid malfunction due to noise.

Three current sensing options are provided: three dedicated onboard op-amps, one internal IPM op-amp and the embedded MCU op-amps; selection is performed through three jumpers.

The Hall/Encoder section (powered at 5 V or 3.3 V) completes the circuit.

UM2682

Circuit schematics

, short-circuit

UM2682 - Rev 2

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Input

DC_b us_vo ltage

STEVAL-IPMNntmp decoder

G M

0 1

2 3

5 6 7

8 9

3.3 V

+Bus

3.3 V

1.6 5V

Bus_ voltage

RC60

RC12

RC14

RC20

RC10

C4 47u/3 5V

INPUT-dc

1 2

RC10

RC7

470 K

R3 120 R

470 K

R6 1k0

U1D

TSV994

411

RC130

RC3

RC80

RC11

RC4

C3 47u/3 5V

7k5

C2 10n

RC5

RC9

330 u/400V

R5 1k0

UM2682 - Rev 2

2.1 Schematic diagrams

Figure 3. STEV

AL-IPMNM3Q board schematic (1 of 5)

page 4/31

Schematic diagrams

UM2682

ph a se_A

ph a se_B

ph a se_C

3.3 V

+5V

EM_S TOP PW M-A-H PW M-A-L PW M-B-H PW M-B-L PW M-C-H PW M-C-L

NTC_b ypas s_re lay

PW M_Vre f M_pha se _A M_pha se _B

Bus _voltage

M_pha se _C

NTC

Curre nt_B_a mp

Curre nt_C_a mp

Curre nt_A_am p

Motor Ou tput

SW 2

SW 3

Con trol Conne ctor

1 2 3 4 5 6 7 8

9 10 11 12 13 14 15 16 17 19 21 23 25 26 27 28 29 30 31 32 33 34

18 20 22 24

SW 1

Curre nt_A

Curre nt_B

Curre nt_C

UM2682 - Rev 2

Figure 4. STEV

AL-IPMNM3Q board schematic (2 of 5)

Schematic diagrams

UM2682

page 5/31

UM2682 - Rev 2

Figure 5. STEV

AL-IPMNM3Q board schematic (3 of 5)

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Schematic diagrams

UM2682

3.3 V

1.6 5V

3.3 V

Curre nt_A_a mp

Curre nt_B_ am pE3

Curre nt_C _a mp

na no OP +

na no OP -

na no OP OUT

R21 1k0

R20 1k9

U1A

TS V994

411

TP 24

R22

R33 1k9

C30 100 p

R27 1k0

C29 330 p

R31

C24 100 p

C28 10n

C25 330 p

TP 25

U1B

TS V994

411

R26 1k0

C23

100 n

C22 10n

R25 1k9

D10

R24 1k9

R32 1k0

C31 330 p

TP 26

SW 17

R23 1k0

R29 1k9

C21

4.7 u 50V

C27 100 p

U1C

TS V994

411

R30 1k0

R28 1k9

C26 10n

R43

UM2682 - Rev 2

Figure 6. STEV

AL-IPMNM3Q board schematic (4 of 5)

page 7/31

Schematic diagrams

UM2682

M_ph as e_ A

M_ph as e_ C

M_ph as e_ B

3.3V

+5V

3.3V

+5V

R42

4k7

R39 2k4

J 5

En code r/Hall

S W12

C37 10 p

S W15

C34 10 0n

S W13

S W10

R40

4k7

S W9

R34

4k7

R41

4k7

R35

4k7

C33 10 0n

C35

10 p

R37 2k4

S W14

R38 2k4

C32 10 0n

S W16

R36

4k7

S W11

C36 10 p

H1/A+ H2/B+

H3/Z+ +3.3/5V GND

Hall/Encoder

UM2682 - Rev 2

Figure 7. STEV

AL-IPMNM3Q board schematic (5 of 5)

page 8/31

Schematic diagrams

UM2682

3 Main characteristics

The board is designed for a 125 VDC to 400 VDC supply voltage.

An appropriate bulk capacitor for the power level of the application must be mounted at the dedicated position on the board.

The SLLIMM-nano integrates six MOSFET switches and high voltage gate drivers. Thanks to this integrated module, the system of increases reliability.

The board offers the added flexibility of being able to operate in single- or three-shunt configuration by modifying

solder bridge jumper settings (see Section 4.3.4 Single- or three-shunt selection).

fers power inversion in a simple and compact design that requires less PCB area and

UM2682

Main characteristics

Figure 8. STEVAL-IPMNM3Q architecture

UM2682 - Rev 2

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GADG221020181007IG

0 5 10 15 20

BOOT Calculated

(µF)

fsw(kHz)

STIPN2M50x-Hy

δ=50%

ΔV

CBOOT

=0.1V

ΔV

CBOOT

=0.3V

ΔV

CBOOT

=0.5V

UM2682

Filters and key parameters

4 Filters and key parameters

4.1 Input signals

The input signals (LINx and HINx) to drive the internal MOSFETs are active high. A 375 kΩ (typ.) pull-down resistor is built-in for each input signal. T close as possible to the IPM. The filter is designed using a time constant of 10 ns (1 kΩ and 10 pF).

4.2 Bootstrap capacitor

In the 3-phase inverter, the emitters of the low side MOSFETs are connected to the negative DC bus (VDC-) as common reference ground, which allows all low side gate drivers to share the same power supply, while the emitter of the high side MOSFETs is alternatively connected to the positive (VDC+) and negative (VDC-) DC bus during running conditions.

A bootstrap method is a simple and cheap solution to supply the high voltage section. This function is normally accomplished by a high voltage fast recovery diode. The SLLIMM-nano MOSFET-based family includes a patented integrated structure that replaces the external diode with a high voltage DMOS functioning as a diode with series resistor. An internal charge pump provides the DMOS driving voltage.

The value of the CBOOT capacitor should be calculated according to the application requirements.

Figure 9. CBOOT graph selection shows the behavior of CBOOT (calculated) versus switching frequency (fsw),

with different values of ΔVCBOOT for a continuous sinusoidal modulation and a duty cycle δ = 50%.

Note: This curve is taken from application note AN5244 (available on www.st.com); calculations are based on the

STIPN2M50x-Hy device, which represents the worst case scenario for this kind of calculation.

The boot capacitor must be two or three times larger than the C

For this design, a value of 2.2 μF was selected.

o prevent input signal oscillation, an RC filter is added on each input as

calculated in the graph.

BOOT

4.3 Overcurrent protection

The SLLIMM-nano MOSFET-based integrates a comparator for fault sensing purposes. The comparator has an internal voltage reference VREF (540 mV typ.) connected to the inverting input, while the non-inverting input on the CIN pin can be connected to an external shunt resistor to implement the overcurrent protection function.

When the comparator triggers, the device enters the shutdown state.

The comparator output is connected to the SD pin in order to send the fault message to the MCU.

Figure 9. CBOOT graph selection

UM2682 - Rev 2

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