UM2682
User manual
300 W motor control power board based on STIPQ3M60T-H SLLIMM™-nano 2nd series MOSFET IPM
Introduction
The STEVAL-IPMNM3Q is a compact motor drive power board equipped with SLLIMM-nano (small low-loss intelligent molded module) 2nd series based on N-channel Power MOSFET MDmesh™ DM2 fast-recovery diode (STIPQ3M60T-HL). It provides an affordable and easy-to-use solution for driving high power motors in a wide range of applications such as power white goods, air conditioning, compressors, power fans and 3-phase inverters for motor drives in general.
The IPM itself consists of six MOSFETs, three high voltage half-bridge gate driver ICs and a wide range of features like undervoltage lockout, smart shutdown, internal temperature sensor and NTC, overcurrent protection and internal op-amp. The main characteristics of this evaluation board are small size, minimal BOM and high efficiency. It features an interface
circuit (BUS and VCC connectors), bootstrap capacitors, snubber capacitor, hardware short-circuit protection, fault event signal and temperature monitoring. It is designed to work in singleor three-shunt configuration and with triple current sensing options: three dedicated on-board op-amps, op-amps embedded on MCU or single internal IPM op-amp. The Hall/Encoder part completes the circuit.
The system is designed to achieve accurate and fast conditioning of current feedback to satisfy the typical requirements for field oriented control (FOC).
The STEVAL-IPMNM3Q is compatible with ST’s control board based on STM32, providing a complete platform for motor control.
Figure 1. Motor control board based on SLIMM-nano 2nd series - top view
Figure 2. Motor control board based on SLIMM-nano 2nd series - bottom view
UM2682 - Rev 2 - November 2020 |
www.st.com |
For further information contact your local STMicroelectronics sales office. |
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UM2682
1Key features
•Input voltage: from 125 to 400 VDC
•Nominal power: up to 300 W
–Allowable maximum power is related to the application conditions and cooling system
•Nominal current: up to 1.1 Arms
•Input auxiliary voltage: up to 20 VDC
•Singleor three-shunt resistors for current sensing (with sensing network)
•Three options for current sensing: dedicated external op-amps, internal SLLIMM-nano or via MCU
•Overcurrent hardware protection
•IPM temperature monitoring and protection
•Hall sensor or encoder input
•MOSFETs intelligent power module
–SLLIMM-nano 2nd series IPM STIPQ3M60T-H - Full molded package
•Motor control connector (32 pins) interfacing with ST MCU boards
•Universal design for further evaluation with breadboard and testing pins
•Very compact size
•WEEE compliant
•RoHS compliant
UM2682 - Rev 2 |
page 2/31 |
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UM2682
2Circuit schematics
The full schematics for the SLLIMM-nano card for STIPQ3M60T-H IPM products is shown below. This card consists of an interface circuit (BUS and VCC connectors), bootstrap capacitors, snubber capacitor, short-circuit protection, fault output circuit, temperature monitoring, single-/three-shunt resistors and filters for input signals. It also includes bypass capacitors for VCC and bootstrap capacitors. The capacitors are located very close to the drive IC to avoid malfunction due to noise.
Three current sensing options are provided: three dedicated onboard op-amps, one internal IPM op-amp and the embedded MCU op-amps; selection is performed through three jumpers.
The Hall/Encoder section (powered at 5 V or 3.3 V) completes the circuit.
UM2682 - Rev 2 |
page 3/31 |
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<![endif]>2 Rev- UM2682
<![if ! IE]><![endif]>4/31 page
Input
DC_bus _volta ge
J 1 |
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C1 |
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330u/400V |
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INP UT-dc |
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STEVAL-IPMNntmp decoder
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M |
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RC1 |
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0 RC3 |
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0 RC4 |
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m |
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0 RC8 |
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0 RC9 |
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p |
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N |
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Q |
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0 RC13 |
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Figure 3. STEVAL-IPMNM3Q board schematic (1 of 5)
+Bus |
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3.3V |
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R1 |
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R5 |
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470K |
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U1D |
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3.3V |
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1k0 |
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R2 |
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TS V994 |
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+ C3 |
R6 |
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+ C4 |
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Bus _volta ge |
47u/35V |
1k0 |
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R3 |
120R |
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R4 |
C2 |
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7k5 |
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0 RC12 |
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<![endif]>UM2682
<![if ! IE]><![endif]>diagrams Schematic
<![endif]>UM2682 2 Rev-
<![if ! IE]><![endif]>5/31 page
Figure 4. STEVAL-IPMNM3Q board schematic (2 of 5)
E1
<![if ! IE]> <![endif]>3 |
S W1 |
2Curre nt_A
Control Conne ctor
<![if ! IE]><![endif]>1
Curre nt_A_a mp |
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J 2 |
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EM_S TOP |
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P WM-C-L |
Bus _volta ge |
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NTC_bypa s s _re la y |
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+5V |
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26 |
NTC |
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27 |
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M_pha s e _A |
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33 |
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M_pha s e _B |
M_pha s e _C |
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E3 |
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<![if ! IE]> <![endif]>3 |
S W3 |
2Curre nt_C
<![if ! IE]><![endif]>1
Curre nt_C_a mp
J 3
pha s e _C
3
2 pha s e _B
1
pha s e _A
Motor Output
<![if ! IE]><![endif]>UM2682
<![if ! IE]><![endif]>diagrams Schematic
<![endif]>2 Rev- UM2682
<![if ! IE]><![endif]>6/31 page
Figure 5. STEVAL-IPMNM3Q board schematic (3 of 5)
<![if ! IE]><![endif]>UM2682
<![if ! IE]><![endif]>diagrams Schematic
<![endif]>UM2682 2 Rev-
1.65V
C22
10n
R21 1k0
E1
C24
100p
R23 1k0
1.65V
C28
10n
R30 1k0
E3
C30
100p
R32 1k0
<![if ! IE]><![endif]>7/31 page
R20
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R33
1k9
Figure 6. STEVAL-IPMNM3Q board schematic (4 of 5)
3.3V
C21
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4.7u 50V |
C23 |
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U1A |
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TP 24 |
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R22 |
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1 |
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1k |
C25 |
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TS V994 |
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1.65V |
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C26 |
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10n |
R25 |
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1k9 |
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R26 |
1k0 |
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E2 |
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C27 |
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R27 |
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3.3V |
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1k9 |
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U1B |
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1k |
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TS V994 |
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3.3V
U1C
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TS V994
<![if ! IE]><![endif]>1
S W17
2
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na no OP OUT
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D10
TP 25
R43
Curre nt_B_a mp
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C29 |
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<![endif]>UM2682
<![if ! IE]><![endif]>diagrams Schematic
<![endif]>2 Rev - UM2682
<![if ! IE]><![endif]>8/31 page
Figure 7. STEVAL-IPMNM3Q board schematic (5 of 5)
3.3V
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<![if ! IE]> <![endif]>3 |
S W9 |
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C32 |
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Hall/Encoder |
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100n |
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S W10 |
R34 |
R35 |
R36 |
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4k7 |
4k7 |
4k7 |
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+5V |
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R37 |
2k4 |
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M_pha s e _A |
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S W11 |
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C33 |
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100n |
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R38 |
2k4 |
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S W12 |
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M_pha s e _B |
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J 5 |
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H1/A+ |
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GND |
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S W13 |
S W14 |
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Encode r/Ha ll |
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C35 |
C36 |
C37 |
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10p |
10p |
10p |
R40 |
R41 |
R42 |
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4k7 |
4k7 |
4k7 |
3.3V |
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S W16 |
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+5V |
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<![endif]>UM2682
<![if ! IE]><![endif]>diagrams Schematic
UM2682
3Main characteristics
The board is designed for a 125 VDC to 400 VDC supply voltage.
An appropriate bulk capacitor for the power level of the application must be mounted at the dedicated position on the board.
The SLLIMM-nano integrates six MOSFET switches and high voltage gate drivers. Thanks to this integrated module, the system offers power inversion in a simple and compact design that requires less PCB area and increases reliability.
The board offers the added flexibility of being able to operate in singleor three-shunt configuration by modifying solder bridge jumper settings (see Section 4.3.4 Singleor three-shunt selection).
Figure 8. STEVAL-IPMNM3Q architecture
UM2682 - Rev 2 |
page 9/31 |
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UM2682
4Filters and key parameters
The input signals (LINx and HINx) to drive the internal MOSFETs are active high. A 375 kΩ (typ.) pull-down resistor is built-in for each input signal. To prevent input signal oscillation, an RC filter is added on each input as close as possible to the IPM. The filter is designed using a time constant of 10 ns (1 kΩ and 10 pF).
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In the 3-phase inverter, the emitters of the low side MOSFETs are connected to the negative DC bus (VDC-) |
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as common reference ground, which allows all low side gate drivers to share the same power supply, while the |
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emitter of the high side MOSFETs is alternatively connected to the positive (VDC+) and negative (VDC-) DC bus |
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during running conditions. |
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A bootstrap method is a simple and cheap solution to supply the high voltage section. This function is normally |
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accomplished by a high voltage fast recovery diode. The SLLIMM-nano MOSFET-based family includes a |
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patented integrated structure that replaces the external diode with a high voltage DMOS functioning as a diode |
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with series resistor. An internal charge pump provides the DMOS driving voltage. |
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The value of the CBOOT capacitor should be calculated according to the application requirements. |
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Figure 9. CBOOT graph selection shows the behavior of CBOOT (calculated) versus switching frequency (fsw), |
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with different values of ΔVCBOOT for a continuous sinusoidal modulation and a duty cycle δ = 50%. |
Note: |
This curve is taken from application note AN5244 (available on www.st.com); calculations are based on the |
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STIPN2M50x-Hy device, which represents the worst case scenario for this kind of calculation. |
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The boot capacitor must be two or three times larger than the CBOOT calculated in the graph. |
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For this design, a value of 2.2 μF was selected. |
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Figure 9. CBOOT graph selection |
<![endif]>CBOOT Calculated (µF)
5
STIPN2M50x-Hy
δ=50%
4
3
ΔVCBOOT=0.1V
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ΔVCBOOT=0.3V |
ΔVCBOOT=0.5V
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0
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5 |
10 |
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20 |
fsw (kHz)
GADG221020181007IG
The SLLIMM-nano MOSFET-based integrates a comparator for fault sensing purposes. The comparator has an internal voltage reference VREF (540 mV typ.) connected to the inverting input, while the non-inverting input on the CIN pin can be connected to an external shunt resistor to implement the overcurrent protection function.
When the comparator triggers, the device enters the shutdown state.
The comparator output is connected to the SD pin in order to send the fault message to the MCU.
UM2682 - Rev 2 |
page 10/31 |
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