STMicroelectronics STGW39NC60VD Schematic [ru]
Features
STGW39NC60VD
40 A - 600 V - very fast IGBT
■ Low C
RES
/ C
ratio (no cross conduction
IES
susceptibility)
■ IGBT co-packaged with ultra fast free-wheeling
diode
Applications
■ High frequency inverters
■ UPS
■ Motor drivers
■ Induction heating
Description
This IGBT utilizes the advanced PowerMESH™
process resulting in an excellent trade-off
between switching performance and low on-state
behavior.
3
2
1
TO-247
Figure 1. Internal schematic diagram
Table 1. Device summary
Order code Marking Package Packaging
STGW39NC60VD GW39NC60VD TO-247 Tube
July 2008 Rev 8 1/15
www.st.com
15
Contents STGW39NC60VD
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
2.2 Frequency applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
2/15
STGW39NC60VD Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
V
CES
(1)
I
C
(1)
I
C
I
CL
I
CP
V
GE
I
F
I
FSM
P
TOT
T
1. Calculated according to the iterative formula:
ICTC()
2. Vclamp = 80%(V
3. Pulse width limited by max. junction temperature allowed
Collector-emitter voltage (VGE = 0)
Collector current (continuous) at 25 °C 80 A
Collector current (continuous) at 100 °C 40 A
(2)
Turn-off latching current 220 A
(3)
Pulsed collector current 220 A
Gate-emitter voltage ± 20 V
Diode RMS forward current at TC = 25 °C
Surge non repetitive forward current
(tp=10 ms sinusoidal)
Total dissipation at TC = 25 °C
Operating junction temperature – 55 to 150 °C
j
T
–
------------------------------- --------------------------------------------- -----------------------=
R
THJ C–VCESAT MAX()TCIC
JMAXTC
) , Tj = 150 °C, RG = 10 Ω, VGE= 15 V
CES
,()×
600 V
30 A
120 A
250 W
Table 3. Thermal resistance
Symbol Parameter Value Unit
R
thj-case
R
thj-case
R
thj-amb
Thermal resistance junction-case (IGBT) max 0.5 °C/W
Thermal resistance junction-case (diode) max 1.5 °C/W
Thermal resistance junction-ambient max 50 °C/W
3/15
Electrical characteristics STGW39NC60VD
2 Electrical characteristics
(T
=25 °C unless otherwise specified)
CASE
Table 4. Static
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)CES
V
CE(sat)
V
GE(th)
I
CES
I
GES
g
fs
1. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Collector-emitter breakdown
voltage (VGE = 0)
Collector-emitter saturation
voltage
Gate threshold voltage
Collector cut-off current
= 0)
(V
GE
Gate-emitter leakage
current (V
(1)
Forward transconductance
CE
= 0)
= 1 mA
I
C
= 15 V, IC = 30 A
V
GE
= 15 V, IC = 30 A,
V
GE
=125 °C
T
C
= VGE, IC=1 mA
V
CE
V
= 600 V
CE
= 600 V, TC = 125 °C
V
CE
V
= ± 20 V
GE
V
= 15 V, IC= 30 A
CE
600 V
1.8
2.4 V
1.7
3.75 5.75 V
5005µA
±100 nA
20 S
Table 5. Dynamic
V
mA
Symbol Parameter Test conditions Min. Typ. Max. Unit
C
C
C
Q
Q
Q
Input capacitance
ies
Output capacitance
oes
Reverse transfer
res
capacitance
g
Total gate charge
Gate-emitter charge
ge
Gate-collector charge
gc
= 25 V, f = 1 MHz, VGE= 0
V
CE
= 390 V, IC = 30 A,
V
CE
= 15 V
V
GE
(see Figure 19)
2900
298
59
126
16
46
pF
pF
pF
nC
nC
nC
4/15
STGW39NC60VD Electrical characteristics
Table 6. Switching on/off (inductive load)
Symbol Parameter Test conditions Min. Typ. Max. Unit
t
d(on)
t
(di/dt)
t
d(on)
t
(di/dt)
t
r(Voff)
t
d(off)
t
t
r(Voff)
t
d(off)
t
Turn-on delay time
Current rise time
r
Turn-on current slope
onf
Turn-on delay time
Current rise time
r
Turn-on current slope
on
Off voltage rise time
Turn-off delay time
Current fall time
f
Off voltage rise time
Turn-off delay time
Current fall time
f
= 390 V, IC = 30 A,
V
CC
=10 Ω, VGE = 15 V
R
G
(see Figure 18)
V
= 390 V, IC = 30 A,
CC
=10Ω, VGE=15 V
R
G
T
=125 °C
C
(see Figure 18)
= 390 V, IC = 30 A,
V
CC
=10 Ω, VGE=15 V
R
G
(see Figure 18)
V
= 390 V, IC = 30 A,
CC
=10 Ω, VGE=15 V
R
G
T
=125 °C
C
(see Figure 18)
33
13
2500
32
14
2280
33
178
65
68
238
128
Table 7. Switching energy (inductive load)
Symbol Parameter Test conditions Min. Typ. Max. Unit
(1)
E
on
E
off
E
E
on
E
off
E
1. Eon is the turn-on losses when a typical diode is used in the test circuit in figure 2 Eon include diode
recovery energy. If the IGBT is offered in a package with a co-pak diode, the co-pack diode is used as
external diode. IGBTs & Diode are at the same temperature (25°C and 125°C)
2. Turn-off losses include also the tail of the collector current
Turn-on switching losses
(2)
Turn-off switching losses
Total switching losses
ts
(1)
Turn-on switching losses
(2)
Turn-off switching losses
Total switching losses
ts
= 390 V, IC = 30 A
V
CC
=10 Ω, VGE= 15 V,
R
G
(see Figure 20)
= 390 V, IC = 30 A
V
CC
=10 Ω, VGE= 15 V,
R
G
TC= 125 °C
(see Figure 20)
333
537
870
618
1125
1743
ns
ns
A/µs
ns
ns
A/µs
ns
ns
ns
ns
ns
ns
µJ
µJ
µJ
µJ
µJ
µJ
5/15
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